CN101950949A - Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer - Google Patents
Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer Download PDFInfo
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- CN101950949A CN101950949A CN2010102602464A CN201010260246A CN101950949A CN 101950949 A CN101950949 A CN 101950949A CN 2010102602464 A CN2010102602464 A CN 2010102602464A CN 201010260246 A CN201010260246 A CN 201010260246A CN 101950949 A CN101950949 A CN 101950949A
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Abstract
The invention discloses a short-circuit shutoff method for an insulated gate bipolar transistor (IGBT) of a high-power current transformer, which is applied in the fields of wind power current transformers and current transformers for ships and the like. The shutoff method for a bypass switch of the conventional short-circuit soft shutoff technique is improved, a detection circuit in a gate voltage discharge process is increased for detecting the gate voltage during discharging, and the bypass switch is actuated to enter the soft shutoff process after the preliminary discharge process of the gate voltage is finished. The method overcomes the defect of long shutoff time delay of the conventional soft shutoff technique, reduces the delay time of the conventional short-circuit soft shutoff during discharging, shortens the operating time of the soft shutoff operation, and increases the survival rate of the IGBT in the short-circuit process.
Description
Technical field:
The present invention relates to a kind of guard method of novel high-power converter, can be applied to comprise wind electric converter, any high-power converter such as propelling current transformer peculiar to vessel is used.This method is applied to insulated gate bipolar triode (IGBT) gate drive circuit of current transformer.Turn-offing as far as possible fast when the present invention has realized insulated gate bipolar triode (IGBT) short circuit also can protect IGBT can not damaged by excessive voltage overshoot simultaneously.
Background technology:
High-power converter has wide application background, and become one of nucleus equipment in a plurality of industries, because insulated gate bipolar triode (IGBT) has the advantages that the electric current and voltage range of application is big and switching speed is fast, is the core switching device in the present main flow high-power converter.
Insulated gate bipolar triode (IGBT) belongs to the power electronic device of full-control type, and the turn-on and turn-off of IGBT are all controlled by gate voltage.Insulated gate bipolar triode (IGBT) is by proprietary gate drive circuit control., as shown in Figure 1, in the IGBT turn on process, gate drive circuit charges to promote gate pole-emitter voltage to gate pole-emitter capacity Cge (1) rapidly.When gate pole-emitter voltage surpasses the conduction threshold of IGBT, the IGBT conducting.In the IGBT turn off process, gate drive circuit discharges gate pole-emitter capacity Cge (1) to reduce gate pole-emitter voltage rapidly.When gate pole-emitter voltage was lower than the conduction threshold of IGBT, IGBT turn-offed.The realization of gate drive circuit adds gate electrode resistance by gate drive pulse voltage and forms.Gate drive pulse voltage possesses generating positive and negative voltage output, has the current driving ability to gate pole-emitter capacity Cge (1) impulse electricity.Gate-drive resistance is responsible for controlling the impulse electricity size of current of Cge, and the impulse electricity electric current of Cge has determined the change speed of gate voltage, thereby has played the switching speed of control IGBT.Whole switching process is by shown in Figure 2.
By shown in Figure 2, in insulated gate bipolar triode (IGBT) turn off process, because the derivation electric capacity of IGBT, in electric current reduction process rapidly, the voltage of collector electrode-emitter will produce overshoot voltage.If overshoot voltage has exceeded the safe range of IGBT, will cause the damage of IGBT device overvoltage.Therefore, when the design driven circuit, need to adjust gate pole and close resistance break, guarantee to turn-off overshoot voltage in the safe range of IGBT to slow down the turn-off speed of IGBT.
In normal working range, in order to improve the reliability of current transformer, insulated gate bipolar triode (IGBT) must possess the ability that short circuit is turn-offed.Short circuit is turn-offed needs to satisfy two conditions; The firstth, the short circuit device must turn-off in the extremely short time, otherwise device can be damaged because of the thermal effect of short circuit current, the short circuit turn-off time of the employed device of MW class current transformer requires about 10us at present, and turn-off speed is fast more, and the probability that device is survived under short-circuit conditions is just high more.The secondth, the short circuit device must not produce too high overshoot voltage when turn-offing, if turn-off speed is too fast, certainly will cause overshoot voltage excessive, can damage IGBT equally.
Turn-off second condition in order to satisfy short circuit, patent US6335608 has proposed soft shutoff technology, and this technology is in the field of business at present to be widely used.Specific implementation as shown in Figure 3, soft shutoff technology has increased a soft pass resistance break (3) on the basis of Fig. 1, under the normal switch condition, soft pass resistance break is by a switching tube in parallel with it (4) bypass, switching speed is determined by gate electrode resistance (2).Detect at gate drive circuit (short circuit condition is measured comparison module (5) by collector electrode-transmitter voltage and finished) under the condition of short circuit, the by-pass switch pipe turn-offs, drive circuit enters soft off state, and switching speed is by gate electrode resistance (2) and the common decision of soft pass resistance break (3).
Though the soft breaking circuit that patent US6335608 provides has successfully solved the problem of the voltage overshoot when short circuit is turn-offed.Yet, as shown in Figure 4,, caused the increase of turn off delay time (8) owing to increased soft pass resistance break.Prolong the short circuit turn-off time of device, very easily cause device short circuit survival rate to reduce, influence the reliability of current transformer.
Summary of the invention
The objective of the invention is: provided a kind of novel short circuit cut-off method, this cut-off method has improved the by-pass switch control method of traditional soft breaking circuit, can solve the excessive defective of soft breaking circuit switch time-delay, and keep soft shutoff technology to reduce the advantage of overshoot voltage simultaneously.For achieving the above object, design of the present invention is:
As shown in Figure 5, moment of playing a role of soft shutoff technology is t
1To t
2Stage.At t
0To t
1In the stage, because this moment, discharge process was not finished as yet, gate voltage does not drop to the shutoff threshold value of IGBT as yet, and therefore the velocity of discharge of the voltage of this moment does not influence turn off process, can not influence overshoot voltage yet.Therefore, design of the present invention is at t
0To t
1Stage reduces to close resistance break, only uses the gate electrode resistance repid discharge, reduces the delay time of switch as far as possible, and at t
1To t
2Stage is cut soft pass resistance break, slows down t
1To t
2Discharge process to reduce shutoff voltage overshoot.Therefore the present invention can reduce the delay time of switch when keeping soft shutoff technological merit.When the current transformer short circuit, turn-off the IGBT of short circuit as far as possible apace, to reach the effect of protection current transformer.
According to above-mentioned inventive concept, technical scheme of the present invention is as follows:
It is similar to soft breaking circuit that gate voltage of the present invention detects decision circuitry, therefore needn't do large-scale change on the basis of traditional gate drive circuit.As Fig. 3 and shown in Figure 5, the present invention has improved the turn-off time of soft shutoff by-pass switch on the basis of soft breaking circuit, the by-pass switch of soft pass of the present invention resistance break, and turn-off simultaneously unlike detecting short circuit current in system in the common soft shutoff scheme.The present invention has increased gate voltage and has detected decision circuitry, and when the gate-drive logical circuit detected the short circuit generation, the present invention at first used the gate electrode resistance repid discharge, detects the size of decision circuitry detecting gate pole tension simultaneously with gate voltage.When gate voltage when turn-offing threshold value, logical circuit sends signal and turn-offs by-pass switch, this moment, soft pass resistance break was connected with the velocity of discharge of the gate voltage that slows down with gate electrode resistance, thereby the overshoot voltage that slows down switching process and produced when reducing the IGBT shutoff.
The present invention compares in prior art, has following conspicuous outstanding substantive distinguishing features and remarkable advantage:
● when suppressing overshoot voltage, reduce the turn-off time of IGBT, increased the survival rate of IGBT in short circuit constantly.
● do not need significantly to change drive circuit, do not increase the complexity of circuit.
Description of drawings
Fig. 1 is the principle schematic of IGBT gate drive circuit.
Fig. 2 is IGBT conducting and turn off process waveform schematic diagram.
Fig. 3 is the gate drive circuit figure of soft shutoff scheme.
Fig. 4 is common turn off process and soft turn off process waveform schematic diagram.
Fig. 5 is the waveform schematic diagram of turn off process of the present invention.
Fig. 6 is that case study on implementation circuit of the present invention is realized figure.
1. gate poles among the figure-emitter capacity, 2. gate electrode resistance, 3. soft pass resistance break, 4. by-pass switch, 5. collector emitter voltage is measured comparison circuit, 6. soft shutoff command signal, 7. signal is judged in short circuit, 8. turn off delay time, 9. gate voltage judgement signal, 10. gate pole-emitter voltage is measured comparison circuit, 11. gate pole-emitter voltage feedback, 12. gate poles-emitter voltage threshold value, 13. part gate-drive logical circuits, 14. the collector emitter voltage feedback, 15. collector electrodes-emitter short-circuit voltage threshold value.
Embodiment
Details are as follows in conjunction with the accompanying drawings for the preferred embodiments of the present invention:
Enforcement circuit example of the present invention as shown in Figure 6, compared with common soft breaking circuit, this enforcement circuit has only increased a simple gate pole-emitter voltage and has measured comparison circuit (10).The realization of comparison circuit is finished by a common amplifier comparator, and the input of comparator is respectively gate pole-emitter voltage feedback (11) and gate pole-emitter voltage threshold value (12).Gate pole emitter voltage threshold value adds 1 volt for the IGBT switching threshold.Provide gate voltage after the comparator negate output and judge signal (9).Gate voltage judges that signal when being lower than in gate pole-emitter voltage feedback or equaling gate pole-emitter voltage threshold value, is output as high signal, shows that entered the implementation phase of the shutoff this moment is t
1To t
2Stage.
When IGBT reached short circuit current, system detects the device short circuit by collector emitter voltage and provides short circuit judged signal (7).The collector emitter voltage testing circuit as shown in Figure 6, testing circuit is realized by the amplifier comparator that mainly the input of comparator is respectively collector emitter voltage feedback (14) and collector electrode-emitter short-circuit voltage threshold value (15).Collector emitter voltage feedback (14) is a voltage measurements, and the acquisition of can in IGBT device data handbook, tabling look-up of collector electrode-emitter short-circuit voltage threshold value (15).When collector emitter voltage feedback is higher than collector electrode-emitter short-circuit voltage threshold value, show the IGBT situation that is short-circuited, comparator then output short-circuit judges that signal be a height.
As shown in Figure 6, the gate-drive logical circuit is handled gate voltage judgement signal and short circuit judgement signal among the present invention, and the concrete manifestation form is a NAND Logic, is output as soft switch command signal.Judging signal (9) and short circuit judgement signal when gate voltage puts when high simultaneously, soft switch command signal is put low, by-pass switch (4) turn-offs, and the resistance of working control this moment impulse electricity is gate electrode resistance (2) and soft pass resistance break sum, and this logical circuit has guaranteed t as shown in Figure 5
1To t
2In resistance combination, circuit is in soft off state.In other cases, soft switch command is put height, by-pass switch (4) conducting, and the resistance that generating is dashed in working control only is gate electrode resistance, circuit is not in soft off state.Therefore, entire circuit has realized technical conceive shown in Fig. 5 and technical scheme.
The gate drive circuit of applicable circuit of the present invention and common high-power converter is similar, current amplification circuit is by common triode amplifying circuit sequitur, the measurement of voltage is made up of common computing amplifier comparator with comparison, and the gate-drive logical circuit is then realized by complex programmable logic device (CPLD) (Complex Programable Logic Device) or on-site programmable gate array FPGA (Field Programmable Gate Array).
Claims (3)
1. the short circuit cut-off method of the insulated gate bipolar triode (IGBT) of high-power converter is characterized in that:
Increase the testing circuit in the gate voltage discharge process, improved the cut-off method of the soft shutoff by-pass switch of short circuit, reduced the time of delay of whole soft turn off process.
2. according to the short circuit cut-off method of the insulated gate bipolar triode (IGBT) of the described high-power converter of claim 1, it is characterized in that: possess the testing circuit in the gate voltage discharge process, the shutoff threshold value of using the amplifier comparator to detect gate voltage and gate voltage compares.When gate voltage near and reach gate voltage and turn-off threshold value, show that gate voltage preliminary electric discharge process finishes.
3. according to the short circuit cut-off method of the insulated gate bipolar triode (IGBT) of the described high-power converter of claim 1, it is characterized in that: the cut-off method that has improved the soft shutoff by-pass switch of short circuit, compare its traditional soft shutoff by-pass switch of short circuit that turn-offs at once when detecting short circuit, the present invention utilizes the testing circuit of gate pole discharge process, guarantee that soft shutoff by-pass switch moves shutoff again after the preliminary electric discharge process is finished, enter soft turn off process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102602464A CN101950949A (en) | 2010-08-23 | 2010-08-23 | Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102602464A CN101950949A (en) | 2010-08-23 | 2010-08-23 | Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer |
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| CN101950949A true CN101950949A (en) | 2011-01-19 |
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| CN2010102602464A Pending CN101950949A (en) | 2010-08-23 | 2010-08-23 | Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102249126A (en) * | 2011-06-14 | 2011-11-23 | 中国矿业大学 | Converting conduction monitoring system for insulated gate transistor used in mine hoist |
| CN102315763A (en) * | 2011-09-08 | 2012-01-11 | 周卫国 | Intelligent power module having soft turn off function |
| CN104022628A (en) * | 2014-05-14 | 2014-09-03 | 华南理工大学 | IGBT series connection voltage sharing control system and method |
| CN104764988A (en) * | 2015-03-31 | 2015-07-08 | 株洲南车时代电气股份有限公司 | Failure testing circuit and method of power device |
| CN107394753A (en) * | 2017-09-09 | 2017-11-24 | 珠海格力节能环保制冷技术研究中心有限公司 | A kind of soft switching protection circuit and method for power device |
| CN108667380A (en) * | 2018-05-23 | 2018-10-16 | 中山瑞信智能控制系统有限公司 | A kind of motor speed overshoot control system |
| CN111641190A (en) * | 2020-05-21 | 2020-09-08 | 四川虹美智能科技有限公司 | Short-circuit protection circuit for compressor of inverter refrigerator |
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| JP2004072635A (en) * | 2002-08-08 | 2004-03-04 | Nissan Motor Co Ltd | Gate drive circuit of semiconductor device |
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| CN201072860Y (en) * | 2007-09-24 | 2008-06-11 | 深圳市英威腾电气股份有限公司 | High tension great current IGBT driver |
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Patent Citations (4)
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| CN1476136A (en) * | 2002-07-30 | 2004-02-18 | ������������ʽ���� | Driving circuit for power semiconductor element |
| JP2004072635A (en) * | 2002-08-08 | 2004-03-04 | Nissan Motor Co Ltd | Gate drive circuit of semiconductor device |
| US20050001659A1 (en) * | 2003-07-02 | 2005-01-06 | Denso Corporation | Gate driving circuit |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102249126A (en) * | 2011-06-14 | 2011-11-23 | 中国矿业大学 | Converting conduction monitoring system for insulated gate transistor used in mine hoist |
| CN102315763A (en) * | 2011-09-08 | 2012-01-11 | 周卫国 | Intelligent power module having soft turn off function |
| CN102315763B (en) * | 2011-09-08 | 2013-09-04 | 周卫国 | Intelligent power module having soft turn off function |
| CN104022628A (en) * | 2014-05-14 | 2014-09-03 | 华南理工大学 | IGBT series connection voltage sharing control system and method |
| CN104022628B (en) * | 2014-05-14 | 2016-08-17 | 华南理工大学 | A kind of control method of IGBT series average-voltage control system |
| CN104764988A (en) * | 2015-03-31 | 2015-07-08 | 株洲南车时代电气股份有限公司 | Failure testing circuit and method of power device |
| CN104764988B (en) * | 2015-03-31 | 2018-01-09 | 株洲南车时代电气股份有限公司 | The failure testing circuit and failure measuring method of a kind of power device |
| CN107394753A (en) * | 2017-09-09 | 2017-11-24 | 珠海格力节能环保制冷技术研究中心有限公司 | A kind of soft switching protection circuit and method for power device |
| CN108667380A (en) * | 2018-05-23 | 2018-10-16 | 中山瑞信智能控制系统有限公司 | A kind of motor speed overshoot control system |
| CN108667380B (en) * | 2018-05-23 | 2021-05-04 | 中山瑞信智能控制系统有限公司 | Motor rotating speed overshoot control system |
| CN111641190A (en) * | 2020-05-21 | 2020-09-08 | 四川虹美智能科技有限公司 | Short-circuit protection circuit for compressor of inverter refrigerator |
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Application publication date: 20110119 |