CN101924151A - 纳米结构太阳能电池 - Google Patents
纳米结构太阳能电池 Download PDFInfo
- Publication number
- CN101924151A CN101924151A CN2010102418822A CN201010241882A CN101924151A CN 101924151 A CN101924151 A CN 101924151A CN 2010102418822 A CN2010102418822 A CN 2010102418822A CN 201010241882 A CN201010241882 A CN 201010241882A CN 101924151 A CN101924151 A CN 101924151A
- Authority
- CN
- China
- Prior art keywords
- nano
- electrode
- solar cell
- hole
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002086 nanomaterial Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000006096 absorbing agent Substances 0.000 claims abstract description 15
- 239000002159 nanocrystal Substances 0.000 claims description 11
- 239000002071 nanotube Substances 0.000 claims description 8
- 239000002070 nanowire Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011358 absorbing material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 2
- 239000011245 gel electrolyte Substances 0.000 claims description 2
- 239000002608 ionic liquid Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- QLKSCXOGMDNMRI-UHFFFAOYSA-N [Sn].[F+][O-] Chemical compound [Sn].[F+][O-] QLKSCXOGMDNMRI-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 5
- 239000002096 quantum dot Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 18
- 239000011532 electronic conductor Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000008521 reorganization Effects 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- -1 fluorine oxide tin (fluorinated tin oxide Chemical class 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
本发明涉及一种纳米结构太阳能电池(100)，其包括第一电极(110)和电耦合到第一电极(110)并被第一电极(110)支撑的规则的电子导电纳米结构膜(115)阵列。多个量子点吸收体(120)附着到导电纳米结构膜(115)。空穴导电材料(125)扩散在电子导电纳米结构膜(115)之间，并且第二电极(130)电耦合到空穴导电材料(125)。
Description
背景技术
透明带孔膜(例如TiO2纳米粒子(NP)膜)作为电子导体已经在例如染料敏化太阳能电池的装置中起着重要的作用。然而，从光吸收感光剂注入的电子沿着随机的、曲折的传输路径在众多粒子边界处遭受损耗。其他采用纳米结构的太阳能电池装置同样遭受电子传输路径中的低效。吸收体(即电子导体和空穴导体界面)处的重组损耗会限制现有技术的纳米使能太阳能电池的全部效用。
附图说明
图1是根据示例实施例的纳米结构太阳能电池的截面简图。
图2是用于制造根据示例实施例的纳米结构太阳能电池的方法的流程说明图。
发明内容
在以下说明书中，对构成本说明书一部分的附图进行参考，并且在附图中通过举例说明的方式示出可以实施的详细实施例。这些实施例被描述得足够详细以使本领域技术人员能够实施本发明，并且应当理解的是，可以利用其他的实施例以及在不脱离本发明范围的情况下可以做出结构上的、逻辑上的、电气上的改变。因此，对示例实施例的如下说明不应当被认为是限定的意思，并且本发明的范围由所附权利要求限定。
图1是纳米结构太阳能电池100的截面框图表示。在一个实施例中，太阳能电池100具有第一电极110。导电纳米结构膜115阵列电耦合到第一电极110并由第一电极110支撑。在一个实施例中，纳米结构膜115包括纳米线、纳米管，或两者的组合。可以诸如以行和列来安排膜，或者在不同的实施例中可以是具有平均间距的稍微随机排列。将多个纳米晶体吸收体120(仅仅一个用附图标记120示出)附着到电子导电纳米结构膜115。纳米晶体光吸收体的例子包括，但不限于：半导体量子点，连续半导体薄膜和非连续半导体薄膜。空穴导电材料125被配置或扩散在电子导电纳米结构膜115之间。在一实施例中纳米结构膜115提供高度纹理化的表面，从而使得膜的表面面积大大增大。空穴导电材料125因此渗入到膜的纹理化表面之间和之内。第二电极130电耦合到空穴导电材料125。
在一实施例中，第一电极110可以是透明的，并且组成阳极，而第二电极130组成阴极。第一电极110可以采用涂敷在柔性基板上的氧化氟锡(fluorinated tin oxide)或氧化铟锡来形成。在另一实施例中，基板可以由玻璃制成，具有电耦合到纳米结构膜115的导电顶层。在一实施例中，第二电极由具有一定钛的铂形成。
在一实施例中，第二电极可具有反射性，从而使得通过第一电极110进入的光可以被纳米晶体吸收体120吸收以生成电子空穴对，并且未被这样吸收的光通过膜115被反射回，其中一些也被纳米晶体吸收体120吸收以生成另外的电子空穴对。
在一实施例中，膜115包括具有部分均匀的纳米孔结构的纳米管和/或纳米线的规则阵列，部分均匀的纳米孔结构允许纳米晶体光吸收材料的生长路径或附着路径以及空穴导电媒介的更好的渗透。可以采用溶液生长或阳极电镀工艺以自组装的方式在第一电极110上形成纳米线或纳米管。在不同的实施例中可以采用诸如TiO2或ZnO的明显透明的宽带隙半导体来形成膜115。膜115提供大表面面积的带孔电子导电表面。在一实施例中，该膜具有大约0.5到10μm的厚度。
然后纳米晶体光吸收体可以通过化学浴沉积(CBD)、选择性离子层吸附和反应(SIL AR)、化学气相沉积工艺或通过自组装直接生长或形成在膜115上。通过在电子导电膜结构上直接形成或生长光吸收体，纳米晶体光吸收体120变得附着在电子导电结构的表面并且形成有效的电子导电路径，从而允许没有显著重组的传输。限制电子重组增强了设备的性能和效用。
在一实施例中，空穴导电材料125包括具有开放的孔的带孔材料和空穴导电流体。在多种实施例中空穴导电流体包括含水电解质、离子液、凝胶电解质和聚合物中的至少一种。带孔材料是规则的导电纳米结构膜阵列的一部分并且可以对纳米线和纳米管的至少之一提供支撑。空穴导电材料125和第二电极130提供空穴导电路径。
这种纳米线或纳米管膜115提供了用作电子导体的规则纳米结构。在一些实施例中，纳米结构具有更连续和整齐的晶体结构，从而为电子传输提供了直接的路径。这种纳米结构也可以提供相对于平面膜而言反向的孔结构。这种孔结构使空穴导电材料更容易渗透，因此为空穴和空穴导电材料的施加提供了同样有效的传输路径。
在图2中的200处大体上示出了用于制造纳米结构太阳能电池100的方法。在210，在透明的导电电极上合成规则的导电纳米结构阵列。在220，在该规则的导电纳米晶体阵列上生长光吸收纳米晶体结构(例如量子点)。步骤220也可以包括将预生长的光吸收材料附着到在步骤210合成的纳米结构电子导体。步骤220也可以包括具有保护光吸收体或电子导体功能的附加薄层的沉积。步骤220也可以包括具有提高器件性能的功能的附加薄层的沉积，其中通过限制重组或增强材料与在步骤210合成的电子导体相结合的能力来提高器件性能。在230添加空穴导电材料，从而使得空穴导电材料渗入纳米结构阵列。在240，提供反射性导电电极，使其电耦合到空穴导电材料。
在各种实施例中，纳米结构阵列可以通过使用化学气相沉积或热液工艺来合成，并且可以由氧化锌或二氧化钛制成。光吸收纳米结构可以使用基于溶液的工艺(诸如化学浴沉积或连续离子层吸附反应(SILAR))直接生长在规则的或稍微随机的电子导电纳米结构阵列上。
在一实施例中，可以调整吸收材料的成分和几何形状来控制能带的排列以保证有效的电子注入。一般地，在半导体中将电子载流子限制到纳米大小的尺寸改变了材料的光学和电学性能。例如，带隙、价带和导带能量可以通过改变材料的尺寸来调节。调节这些能量可以提高太阳能电池装置的性能和效用。可以通过在光吸收体的合成期间改变众多生长参数中的一个来改变材料的尺寸和几何形状。控制纳米晶体光吸收体的尺寸和几何形状的参数的例子包括生长时间、pH值、坐标溶剂和非坐标溶剂、生长材料的相对浓度和生长温度。纳米晶体光吸收体的不同生长机制(诸如溶液、气相和等离子)可能具有改变材料的尺寸和几何形状的不同机制。
在一实施例中，光吸收材料包括铅镉硫族化合物以及ZnS中的至少一种。在另外一实施例中，光吸收材料包括无毒基板。无毒纳米晶体吸收体的例子包括硅和铟、镓、磷成分。采用这些材料可以有效地跨越可见光区。将ZnS层添加到纳米结构的暴露表面可以有助于防止俘获状态，从而通过减少重组来增大太阳能电池装置的效率。
提供摘要以符合37C.F.R§1.72(b)，以便让读者快速理解本技术公开的实质和要点。摘要应理解为其并不用于解释或限制权利要求的范围或含义。
Claims (10)
1.一种太阳能电池(100)，包括：
第一电极(110)；
电耦合到第一电极(110)并被其支撑的电子导电纳米结构膜(115)阵列；
附着到电子导电纳米结构膜(115)的多个纳米晶体光吸收体(120)；
在电子导电纳米结构膜(115)之间设置的空穴导电材料(125)；和
电耦合到空穴导电材料的第二电极(130)。
2.根据权利要求1的太阳能电池(100)，其中电子导电纳米结构膜(115)包括纳米线。
3.根据权利要求1的太阳能电池(100)，其中电子导电纳米结构膜(115)包括纳米管。
4.根据权利要求1的太阳能电池(100)，其中第一电极(110)组成透明的阳极而第二电极(130)组成具有光学反射性表面的阴极。
5.根据权利要求1的太阳能电池(100)，其中第一电极(110)包括涂敷有氧化氟锡的柔性基板。
6.根据权利要求1的太阳能电池(100)，其中空穴导体(125)包括具有开放的孔的带孔材料以及空穴导电流体，所述空穴导电流体包括含水电解质、离子液、凝胶电解质和聚合物中的至少一种。
7.根据权利要求6的太阳能电池(100)，其中带孔材料是电子导电材料(125)阵列的一部分并且提供对纳米线和纳米管的至少之一的支撑。
8.一种方法(200)，包括：
在透明的导电电极(110)上合成(210)规则的电子导电纳米结构阵列(115)；
在规则的导电纳米结构阵列(115)上生长(220)光吸收纳米结构(120)；
添加(230)空穴导电材料(125)，以使得空穴导电材料渗入纳米结构阵列(115)；以及
提供(240)电耦合到空穴导电材料的反射性导电电极。
9.根据权利要求8的方法，其中纳米结构阵列(115)包括纳米线和纳米管至少其中之一。
10.根据权利要求8的方法，其中采用基于溶液的工艺将光吸收纳米结构(120)直接生长在电子导电纳米结构阵列(115)上，并且其中调整吸收材料的成分和几何形状以控制能带的排列以便保证有效的电子注入。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/484608 | 2009-06-15 | ||
| US12/484,608 US20100313953A1 (en) | 2009-06-15 | 2009-06-15 | Nano-structured solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101924151A true CN101924151A (zh) | 2010-12-22 |
Family
ID=42767979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102418822A Pending CN101924151A (zh) | 2009-06-15 | 2010-06-13 | 纳米结构太阳能电池 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100313953A1 (zh) |
| EP (1) | EP2264780A3 (zh) |
| CN (1) | CN101924151A (zh) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683440A (zh) * | 2011-01-13 | 2012-09-19 | 霍尼韦尔国际公司 | 毫微结构的太阳能电池 |
| WO2012155293A1 (en) * | 2011-05-17 | 2012-11-22 | Honeywell International Inc. | Novel electroconductive films for quantum dot sensitized solar cells |
| CN106057956A (zh) * | 2016-06-27 | 2016-10-26 | 浙江大学 | 一种基于离子液体凝胶电解质的准固态柔性自供能型ZnO基紫外探测器及其制备方法 |
| CN106663705A (zh) * | 2014-09-24 | 2017-05-10 | 京瓷株式会社 | 光电变换装置以及光电变换模块 |
| WO2020258659A1 (zh) * | 2019-06-27 | 2020-12-30 | 深圳市华星光电半导体显示技术有限公司 | 量子点发光二极管器件及其制备方法 |
| CN112909108A (zh) * | 2021-01-15 | 2021-06-04 | 重庆科技学院 | 基于量子点的壳芯结构纳米线阵列太阳能电池 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101636907B1 (ko) * | 2009-12-08 | 2016-07-07 | 삼성전자주식회사 | 다공성 나노 구조체 및 그 제조 방법 |
| US20110277822A1 (en) * | 2010-05-11 | 2011-11-17 | Honeywell International Inc. | Composite electron conductor for use in photovoltaic devices |
| US20130298978A1 (en) * | 2011-01-31 | 2013-11-14 | Honeywell International Inc. | Quantum dot solar cell |
| CA2864212A1 (en) * | 2011-02-10 | 2012-08-16 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis |
| FR2972852B1 (fr) * | 2011-03-17 | 2013-04-12 | Commissariat Energie Atomique | Dispositif a base de nano/microfils stabilise mecaniquement et aux proprietes optiques ameliorees et son procede de realisation |
| US8796693B2 (en) | 2012-12-26 | 2014-08-05 | Seoul Semiconductor Co., Ltd. | Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO |
| KR101410668B1 (ko) | 2013-06-04 | 2014-06-25 | 포항공과대학교 산학협력단 | 친환경 양자점 감응형 태양전지 및 이의 제조방법 |
| CN104944404B (zh) * | 2014-03-26 | 2019-05-31 | 清华大学 | 纳米管膜 |
| WO2021131113A1 (ja) * | 2019-12-24 | 2021-07-01 | パナソニックＩｐマネジメント株式会社 | 太陽電池 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070089784A1 (en) * | 2005-10-26 | 2007-04-26 | Noh Chang H | Solar cell-driven display device and method of manufacturing thereof |
| EP2009713A2 (en) * | 2007-06-26 | 2008-12-31 | Honeywell International Inc. | Nanostructured solar cell |
| CN101411001A (zh) * | 2006-02-16 | 2009-04-15 | 索莱赞特公司 | 纳米颗粒敏化的纳米结构的太阳能电池 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070056581A (ko) * | 2005-11-30 | 2007-06-04 | 삼성전자주식회사 | 태양전지용 전극, 그의 제조방법 및 그를 포함하는태양전지 |
| EP1989744A1 (en) * | 2006-02-16 | 2008-11-12 | Solexant Corporation | Nanoparticle sensitized nanostructured solar cells |
| US20070295388A1 (en) * | 2006-05-05 | 2007-12-27 | Nanosolar, Inc. | Solar assembly with a multi-ply barrier layer and individually encapsulated solar cells or solar cell strings |
| US7910015B2 (en) * | 2007-10-22 | 2011-03-22 | Institute Of Nuclear Energy Research | Polymer electrolyte for dye sensitized solar cell |
-
2009
- 2009-06-15 US US12/484,608 patent/US20100313953A1/en not_active Abandoned
-
2010
- 2010-06-10 EP EP10165595A patent/EP2264780A3/en not_active Withdrawn
- 2010-06-13 CN CN2010102418822A patent/CN101924151A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070089784A1 (en) * | 2005-10-26 | 2007-04-26 | Noh Chang H | Solar cell-driven display device and method of manufacturing thereof |
| CN101411001A (zh) * | 2006-02-16 | 2009-04-15 | 索莱赞特公司 | 纳米颗粒敏化的纳米结构的太阳能电池 |
| EP2009713A2 (en) * | 2007-06-26 | 2008-12-31 | Honeywell International Inc. | Nanostructured solar cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683440A (zh) * | 2011-01-13 | 2012-09-19 | 霍尼韦尔国际公司 | 毫微结构的太阳能电池 |
| WO2012155293A1 (en) * | 2011-05-17 | 2012-11-22 | Honeywell International Inc. | Novel electroconductive films for quantum dot sensitized solar cells |
| CN106663705A (zh) * | 2014-09-24 | 2017-05-10 | 京瓷株式会社 | 光电变换装置以及光电变换模块 |
| CN106663705B (zh) * | 2014-09-24 | 2018-11-06 | 京瓷株式会社 | 光电变换装置以及光电变换模块 |
| CN106057956A (zh) * | 2016-06-27 | 2016-10-26 | 浙江大学 | 一种基于离子液体凝胶电解质的准固态柔性自供能型ZnO基紫外探测器及其制备方法 |
| WO2020258659A1 (zh) * | 2019-06-27 | 2020-12-30 | 深圳市华星光电半导体显示技术有限公司 | 量子点发光二极管器件及其制备方法 |
| CN112909108A (zh) * | 2021-01-15 | 2021-06-04 | 重庆科技学院 | 基于量子点的壳芯结构纳米线阵列太阳能电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2264780A2 (en) | 2010-12-22 |
| US20100313953A1 (en) | 2010-12-16 |
| EP2264780A3 (en) | 2012-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101924151A (zh) | 纳米结构太阳能电池 | |
| Li et al. | Enhanced electrochromic properties of WO3 nanotree-like structures synthesized via a two-step solvothermal process showing promise for electrochromic window application | |
| Koo et al. | Improvement of transparent conducting performance on oxygen-activated fluorine-doped tin oxide electrodes formed by horizontal ultrasonic spray pyrolysis deposition | |
| Yang et al. | Three-dimensional photonic crystal fluorinated tin oxide (FTO) electrodes: synthesis and optical and electrical properties | |
| WO2005081324A1 (ja) | 光電変換装置用基板、光電変換装置、積層型光電変換装置 | |
| KR101208272B1 (ko) | 양면 구조를 가지는 태양전지 및 이의 제조방법 | |
| KR20190102066A (ko) | 솔라 셀의 효율을 높이는 방법 및 시스템 | |
| KR20130084218A (ko) | 나노구조체 및 이를 구현하는 광전지 | |
| US20100013037A1 (en) | Solar cell and manufacturing method thereof | |
| JP2004343071A (ja) | 電子機器に用いられる多孔質膜、その多孔質膜の使用方法、電子機器、及びその多孔質膜の製造方法 | |
| US20090320914A1 (en) | Dye-sensitized solar cell and method of fabricating the same | |
| KR20120008231A (ko) | 산화아연 나노 구조체 전극 제조 방법 및 이를 이용한 염료 감응형 태양 전지 제조 방법 | |
| JP2007234569A (ja) | ＩｎＮ／ＴｉＯ２光感作電極およびその製造方法 | |
| JP4899118B2 (ja) | 非単結晶半導体材料の製造方法 | |
| Zhao et al. | Constructed TiO 2/WO 3 heterojunction with strengthened nano-trees structure for highly stable electrochromic energy storage device. | |
| KR20100046447A (ko) | 염료감응 태양전지의 전극과 그 제조방법 및 염료감응 태양전지 | |
| CN109126661A (zh) | 一种叠层式光谱分光太阳能光催化反应系统 | |
| KR101634620B1 (ko) | 기공을 포함하는 금속 산화물 광전극의 제조방법, 이에 따라 제조되는 금속 산화물 광전극 및 이를 포함하는 페로브스카이트 태양전지 | |
| JP4026501B2 (ja) | 光電変換素子の製造方法、光電変換素子および電子機器 | |
| Banerjee et al. | Tailored interfaces of the bulk silicon nanowire/TiO2 heterojunction promoting enhanced photovoltaic performances | |
| US7655575B2 (en) | InN/InP/TiO2 photosensitized electrode | |
| US9887043B2 (en) | Method of manufacturing dye-sensitized solar cell having light absorption increase means and the solar cell | |
| KR101615925B1 (ko) | 복합구조 광전극 및 그 제조 방법 | |
| CN104992840A (zh) | 量子点敏化太阳电池及其制备方法 | |
| JPWO2021048923A1 (ja) | 電極の製造方法および光電変換素子の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101222 |