CN101887199A - Liquid crystal display device and method for manufacturing the same - Google Patents
Liquid crystal display device and method for manufacturing the same Download PDFInfo
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- CN101887199A CN101887199A CN2009100572669A CN200910057266A CN101887199A CN 101887199 A CN101887199 A CN 101887199A CN 2009100572669 A CN2009100572669 A CN 2009100572669A CN 200910057266 A CN200910057266 A CN 200910057266A CN 101887199 A CN101887199 A CN 101887199A
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- liquid crystal
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- photoresistance
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 39
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 39
- 238000009413 insulation Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- -1 aluminium silver Chemical compound 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 11
- 238000000151 deposition Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 230000003760 hair shine Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The invention relates to a liquid crystal display device and a manufacturing method of a bulge of a reflecting area of the liquid crystal display device. The method comprises providing a substrate, depositing an inorganic gate insulating layer in the reflective region of the substrate; covering a photoresist at the position where the inorganic grid insulating layer is required to form a bulge; and providing etching gas to the substrate covered with the inorganic gate insulating layer and the photoresist to enable the part of the inorganic gate insulating layer covered with the photoresist to form a projection with a smooth surface. The manufacturing method of the liquid crystal display device reflecting area bulge has low manufacturing cost and high reflecting area reflectivity.
Description
Technical field
The present invention relates to the manufacture method of a kind of liquid crystal indicator and this liquid crystal indicator.
Background technology
Liquid crystal indicator is widely used in mobile phone, personal digital assistant, notebook computer, personal computer and TV domain because of having characteristics such as little, the low radiation of volume, low power consumption.Consideration for control backlight power and outdoor display characteristic, the display screen of a lot of liquid crystal indicators has all adopted reflective-mode, utilize the reflector space reflect ambient light to realize the effect of compensate for brightness, therefore, reflectivity and reflection visual angle all are the technical parts that needs consideration.Usually, the reflective-mode of the display screen of liquid crystal indicator comprises half-reflection and half-transmission pattern and total reflection pattern.
Reflectivity and reflection visual angle for the display screen reflector space that increases liquid crystal indicator are provided with projection (Bump) at this reflector space usually.In the prior art, this projection is to adopt the organic film material with high sensitometric characteristic, low-k, utilize photoetching to make it form numerous convex patterns, sink after by the baking of heating the organic membrane pattern being heated again and form the arch bulge-structure, splash-proofing sputtering metal forms reflectance coating in the above at last, finishes reflector space.This method makes this convex surfaces smooth to increase reflectivity, because this projection can make incident light to all directions scattering, can obtain reasonable reflection visual angle simultaneously.
The organic membrane that said method adopts is owing to have high optical transmission, low-k and good characteristics such as one-tenth film uniformity, and its price is very high, is unfavorable for reducing the cost of manufacture of the display screen of this liquid crystal indicator.And this organic membrane size after heating is caved in is bigger than normal, and then the size of the projection that forms is bigger, if increase the density of projection, adjacent protrusion was joined together to form sheet after baking was collapsed, cause the decline of entire emission zone internal projection density, thereby reduced the reflectivity of the display screen of this liquid crystal indicator.
Summary of the invention
For the low technical matters of manufacturing cost height, reflectivity of the reflective display screen that solves liquid crystal indicator of the prior art, be necessary to provide the manufacture method of the high liquid crystal indicator of a kind of low cost of manufacture and reflectivity.
The present invention also provides a kind of low cost of manufacture and the high liquid crystal indicator of reflectivity.
The manufacture method of a kind of liquid crystal indicator echo area projection comprises the steps: to provide a substrate, at this substrate deposition inorganic insulation layer; The position that need form projection at this inorganic insulation layer covers photoresistance; Provide etching gas to the substrate that is coated with this inorganic insulation layer and this photoresistance, remove this photoresistance, form the projection that the surface is curved surface so that this inorganic insulation layer is coated with the part of this photoresistance.
A kind of liquid crystal indicator, comprise a substrate, the surface of this substrate is formed with the pixel cell of a plurality of array arrangements, and each this pixel cell comprises thin film transistor region and echo area, this echo area comprises that at least one surface is the projection of curved surface, and this projection is formed by inorganic insulating material.
Wherein, this projection is semisphere or elliposoidal.This inorganic insulating material is silicon nitride or monox.The width span of its maximum width at that this is protruding is 2 μ m～5 μ m, and this protruding height is 300nm.This liquid crystal indicator is total-reflection type liquid crystal indicator or Transflective liquid crystal indicator.The thickness of this photoresistance is 1.3 μ m.
Providing in the step of etching gas, comprise that also the air pressure of adjusting this etching gas is to adjust the flexibility of this convex surfaces to the substrate that is coated with this inorganic insulation layer and this photoresistance.
The position that need form projection at this inorganic insulation layer covers in the step of photoresistance, comprises that also the thickness of adjusting this photoresistance is to adjust the height that this convexes to form.
Compared with prior art, the manufacture method of the echo area projection of liquid crystal indicator of the present invention, cover this photoresistance by the position that will form projection at this inorganic insulation laminar surface, make this substrate cover the surperficial rough and uneven in surface of this inorganic insulation layer and this photoresistance, thereby make this etching gas not cover the part of this photoresistance at this inorganic insulation layer, this photoresistance fringe region, near this photoresistance middle section distributed density reduces successively, and this inorganic insulation layer does not cover the part of this photoresistance, the fringe region of this photoresistance, the etching speed of the middle section of this photoresistance reduces successively.Thereby this inorganic insulation layer is etched forms the projection of surface smoothing, and then reduced the absorption that shines this projection glazed thread, improved reflectivity.The manufacture method of the echo area projection of liquid crystal indicator of the present invention uses the manufacture method cost of the organic film material with high sensitometric characteristic, low-k low.
Description of drawings
Fig. 1 is a kind of cross section structure synoptic diagram of single pixel region of the liquid crystal indicator with echo area projection.
Fig. 2 to Fig. 6 is each step synoptic diagram of manufacture method of the liquid crystal indicator of better embodiment of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, Fig. 1 is a kind of cross section structure synoptic diagram of single pixel region of the liquid crystal indicator with echo area projection.This liquid crystal indicator 10 is half-transparent half-reflection LCDs, this liquid crystal indicator 10 comprises a substrate 11, the surface of this substrate 11 is formed with the pixel cell of a plurality of array arrangements, each pixel cell is divided into thin film transistor (TFT) (Thin Film Transistor, TFT) district 12, penetrating region 13 and echo area 14.Thin film transistor (TFT) is arranged at this thin film transistor region 12, and this thin film transistor (TFT) comprises the grid 121 that is set in turn in these substrate 11 surfaces, gate insulator 122, semiconductor island 123 and source/drain electrode 124.Preferably, this gate insulator 122 is formed by inorganic insulating material, and this inorganic insulating material is silicon nitride (SiNx) or monox.Can also be formed with passivation layer on this source/drain electrode 124 and this semiconductor island 123, this passivation layer is also formed by inorganic insulating material.
This echo area 14 comprises a plurality of protruding 141 and this protruding reflection horizon 143 of covering that is arranged at these substrate 11 surfaces.This projection 141 has level and smooth surface profile, that is, the surface of this projection 141 is a curved surface, is used to increase the reflectivity that extraneous light shines this projection 141.Preferably, this projection 141 is semisphere or elliposoidal, and the diameter of this hemispherical projections 141 is that the width of its maximum width at of 3 μ m or this elliposoidal projection 141 is 3 μ m.The material of this projection 141 is identical with the material of the gate insulator of this thin film transistor (TFT) 122, is silicon nitride; Or material that should projection 141, identical with the material of the passivation layer of the semiconductor island 123 that covers this thin film transistor (TFT) and source/drain electrode 124, be silicon nitride.This projection 141 can form synchronously with the gate insulator 122 of this thin film transistor (TFT).The material in this reflection horizon 143 is aluminium, silver, aluminium silver alloy or other high reflectance materials.This reflection horizon 143 can form synchronously with the source electrode 124 of this thin film transistor (TFT).
See also Fig. 2 to Fig. 6, Fig. 2 to Fig. 6 is each step synoptic diagram of manufacture method of the liquid crystal indicator of better embodiment of the present invention.
This manufacture method mainly comprises the steps: to provide a substrate 11, echo area 14 depositions, one silicon nitride layer 145 on this substrate 11; The position that needs to form projection 141 at this silicon nitride layer 145 covers photoresistance 15; Provide uniform etching gas 16 to the substrate 11 that is coated with this silicon nitride layer 145, this etching gas 16 reduces successively at the distributed density that contiguous this silicon nitride layer 145 does not cover the surface of the surface of the surface of these photoresistance 15 parts, contiguous these photoresistance 15 fringe regions, contiguous these photoresistance 15 middle sections, and the etching speed of middle section that this silicon nitride layer 145 does not cover fringe region, this photoresistance 15 of part, this photoresistance 15 of this photoresistance 15 reduces successively; The part that this silicon nitride layer 145 does not cover this photoresistance 15 is etched and sinks, the part that this silicon nitride layer 145 covers this photoresistance 15 forms projection 141, the fringe region of this projection 141 is etched gradually and forms level and smooth curvedly, and the middle section of this projection 141 covers this photoresistance 15 and is not etched; The partial etching that this silicon nitride layer 145 does not cover this photoresistance 15 finishes, and these photoresistance 15 etchings finish and middle section that should projection 141 forms level and smooth surface, these projection 141 whole smooth surfaces that form.
Wherein, the step that needs the position of this projection 141 of formation to cover this photoresistance 15 at this silicon nitride layer 145 comprises: form photoresist layer on this silicon nitride layer 145, this photoresist layer is carried out etching, only keep this photoresistance of the position that needs this projection 141 of formation.
Wherein, providing in the step of etching gas 16, comprise that also the air pressure of adjusting this etching gas 16 is to adjust the flexibility on these projection 141 surfaces to the substrate 11 that is coated with this silicon nitride layer 145 and this photoresistance 15.
Wherein, the position that needs to form projection 141 at this silicon nitride layer 145 covers in the step of photoresistance 15, can also comprise that the thickness of adjusting this photoresistance 15 is to adjust the height of these protruding 141 formation.
Wherein, this manufacture method can also comprise: after the part that this silicon nitride layer 145 covers these photoresistances 15 forms the projection 141 that the surface is curved surface, in these projection 141 surface deposition reflection horizon.
Below in conjunction with each accompanying drawing, describe the manufacture method of this liquid crystal indicator 10 in detail:
See also shown in Figure 2ly, this substrate 11 is provided; Deposit gate metal layer, and this gate metal layer is carried out etching, form grid 121; Deposited silicon nitride insulation course on this grid 121.Echo area 14 on this substrate 11 also is formed with silicon nitride layer 145, promptly this silicon nitride layer 145 loses gas 16 with the gate insulator 122 of this thin film transistor (TFT) same step shape, because it is surperficial rough and uneven in surface that this silicon nitride layer 145 on this substrate 11 and this photoresistance 15 form, therefore, this etching gas 16 is in the distributed density difference of contiguous this rough and uneven in surface near surface.At sunk part, the distributed density of this etching gas 16 is bigger, and is less at the distributed density of this etching gas 16 of bossing.Concrete, this etching gas 16 does not cover the concentration maximum of the near surface of these photoresistance 15 parts at contiguous this silicon nitride layer 145, and it is the fastest that this silicon nitride layer 145 does not cover the etching speed of these photoresistance 15 parts.According to edge effect, this etching gas 16 is placed in the middle in the concentration of the near surface of contiguous these photoresistance 15 fringe regions, and the etching speed of the fringe region of this photoresistance 15 is placed in the middle.This etching gas 16 is in the concentration minimum of the near surface of contiguous these photoresistance 15 middle sections, and the etching speed of the middle section of this photoresistance 15 is the slowest.
After etching after a while, this silicon nitride layer 145 does not cover the part of this photoresistance 15 and sinks because of etching, and remainder is not etched because of covering this photoresistance 15, and therefore, the place that this silicon nitride layer 145 covers this photoresistance 15 forms projection 141.Because the etching speed of these photoresistance 15 fringe regions is greater than the etching speed of these photoresistance 15 middle sections, the fringe region of this photoresistance 15 is etched gradually and forms level and smooth curved surface.
See also Fig. 4, then again after etching after a while, the part that this silicon nitride layer 145 does not cover this photoresistance 15 continues to sink because of etching, and the height of this projection 141 is increasing.Because the etching speed of these photoresistance 15 fringe regions is greater than the etching speed of these photoresistance 15 middle sections, these photoresistance 15 fringe regions are etched at first and finish, after this, the fringe region of this projection 141 also begins to be etched owing to this photoresistance 15 not covers and forms level and smooth curved surface.Because the etching speed of these photoresistance 15 middle sections is less than the etching speed of these photoresistance 15 fringe regions, these photoresistance 15 middle sections are not etched as yet and finish, and promptly are not etched by the middle section of this projection 141 of these photoresistance 15 coverings.
See also Fig. 5, last, the surface that the part that this silicon nitride layer 145 does not cover this photoresistance 15 is etched and finishes and expose this substrate 11 at first.The middle section of this photoresistance 15 also is etched and finishes and expose the middle section of this projection 141, and the middle section of this projection 141 is also formed level and smooth curved surface by partial etching.The fringe region of this projection 141 then further is etched, thereby the part that this silicon nitride layer 145 covers this photoresistance 15 forms the projection 141 of surface smoothing on the whole.Preferably, this projection 141 is semisphere, and the diameter range of this hemispherical projections 141 is 2 μ m～5 μ m, and the height of this projection 141 is 300nm.
See also Fig. 6, after the projection 141 of this surface smoothing forms, formation source/drain metal layer, and this source/drain metal layer carried out etching, form the source/drain electrode 124 of thin film transistor (TFT), and on the substrate 11 of the echo area 14 of this liquid crystal indicator 10 and formation reflection horizon 143, surface that should level and smooth projection 141.Therefore, this reflection horizon 143 forms in same step with the source/drain electrode 124 of this thin film transistor (TFT).
For the Transflective liquid crystal indicator, also will be after formation source/drain metal layer, forming passivation layer, should projection 141 can be to form with this passivation layer so, and the formation method is identical or approximate with the method that this projection 141 and this gate insulator form together; After forming passivation layer, form reflective metal layer again, then, this reflective metal layer and source/drain metal layer do not form in same step.
Compared with prior art, the manufacture method of the liquid crystal indicator 10 of the embodiment of the invention, cover this photoresistance 15 by the position that will form projection 141 on these silicon nitride layer 145 surfaces, make surperficial rough and uneven in surface that this silicon nitride layer 145 on this substrate 11 and this photoresistance 15 form, thereby make this etching gas 16 not cover the part of this photoresistance 15 at this silicon nitride layer 145, these photoresistance 15 fringe regions, near these photoresistance 15 middle sections distributed density reduces successively, and this silicon nitride layer 145 does not cover the part of this photoresistance 15, these photoresistance 15 fringe regions, the etching speed of these photoresistance 15 middle sections reduces successively.Thereby this silicon nitride layer 145 is etched forms the projection 141 of surface smoothing, that is, raised surface is a curved surface, and then has reduced the absorption that shines these projection 141 glazed threads.Therefore, the manufacture method of liquid crystal indicator 10 of the present invention uses the organic film material with high sensitometric characteristic, low-k low as the manufacture method cost of raised material than the employing of prior art, and by increasing the distribution density that covers photoresistance 15, the distribution density of this projection 141 of this echo area 14 can be increased, thereby the reflectivity of these liquid crystal indicator 10 echo areas 14 can be effectively improved.
See also table 1, table 1 is the reflective light intensity contrast table of two kinds of diameter projection different with distribution density.These data are that the incident angle at the incident light that shines this substrate 11 is 60 degree, and diameter is respectively under the situation of two kinds of projectioies of 8 μ m, 3 μ m and records.The the 1st, the 2nd line data adopts minor diameter as can be known in the contrast table 1, and the projection of high distribution density can better improve reflection efficiency.
Table 1
| Minimum intensity of light (lux) | Largest light intensity (lux) | Average intensity (lux) | Total light intensity (flux) | |
| Projection (8 μ m) | 1.5132e-10 | 11598 | 1224.7 | 0.27555 |
| Projection (3 μ m) | 2.1217e-10 | 14115 | 1498.7 | 0.33721 |
In the above-described embodiment, this silicon nitride layer 145 part of not covering this photoresistance 15 surface of being etched and finishing and expose this substrate 11 at first.The surface that also can not expose this substrate 11 after the partial etching that this silicon nitride layer 145 does not cover this photoresistance 15 finishes, it is described to be not limited to above-mentioned embodiment.
The manufacture method of the liquid crystal indicator of above-mentioned embodiment is used for the Transflective liquid crystal indicator, also can be used for the total-reflection type liquid crystal indicator, and it is described to be not limited to above-mentioned embodiment.
The projection 141 of the echo area 14 of the liquid crystal indicator 10 of above-mentioned embodiment is semisphere, also can be elliposoidal or triangle.Adjust the height of this projection 141 by the thickness of adjusting this photoresistance 15, adjust the flexibility on these projection 141 surfaces by the air pressure of adjusting this etching gas 16.
The projection 141 of above-mentioned embodiment is to be formed by silicon nitride layer 145 etchings, also can be formed by other inorganic insulating material etchings, and it is described to be not limited to above-mentioned embodiment.The silicon nitride layer 145 of above-mentioned embodiment can independently form, this silicon nitride layer 145 also can form synchronously with the gate insulator 122 of this thin film transistor (TFT) of liquid crystal indicator 10, and this reflection horizon 143 also can form synchronously with the source/drain electrode 124 of this thin film transistor (TFT) of liquid crystal indicator 10.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the instructions.
Claims (19)
1. liquid crystal indicator, comprise a substrate, the surface of this substrate is formed with the pixel cell of a plurality of array arrangements, each this pixel cell comprises thin film transistor region and echo area, it is characterized in that: this echo area comprises that at least one surface is the projection of curved surface, and this projection is formed by inorganic insulating material.
2. liquid crystal indicator as claimed in claim 1 is characterized in that: this projection is semisphere or elliposoidal.
3. liquid crystal indicator as claimed in claim 1 is characterized in that: this inorganic insulating material is silicon nitride or monox.
4. liquid crystal indicator as claimed in claim 1 is characterized in that: the width span of its maximum width at that this is protruding is 2 μ m～5 μ m, and this protruding height is 300nm.
5. as the manufacture method of liquid crystal indicator any in the claim 1 to 4, comprise the steps:
Provide this substrate, at this substrate deposition inorganic insulation layer;
The position that need form projection at this inorganic insulation layer covers photoresistance;
Provide etching gas to the substrate that is coated with this inorganic insulation layer and this photoresistance, remove this photoresistance, form the projection that the surface is curved surface so that this inorganic insulation layer is coated with the part of this photoresistance.
6. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that:, comprise that also the air pressure of adjusting this etching gas is to adjust the flexibility of this convex surfaces providing in the step of etching gas to the substrate that is coated with this inorganic insulation layer and this photoresistance.
7. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: this liquid crystal indicator is total-reflection type liquid crystal indicator or Transflective liquid crystal indicator.
8. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: the thickness of this photoresistance is 1.3 μ m.
9. the manufacture method of liquid crystal indicator as claimed in claim 5 is characterized in that: need form in the step of protruding position covering photoresistance at this inorganic insulation layer, comprise that also the thickness of adjusting this photoresistance is to adjust the height that this convexes to form.
10. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: the step that need form the position covering photoresistance of projection at this inorganic insulation layer comprises: form photoresist layer on this inorganic insulation layer, this photoresist layer is carried out etching, only keep this photoresistance that needs to form protruding position.
11. the manufacture method of liquid crystal indicator as claimed in claim 5, it is characterized in that: the thin film transistor region of this liquid crystal indicator comprises thin film transistor (TFT), this thin film transistor (TFT) has grid, gate insulator, semiconductor island and the source/drain electrode that is set in turn in this substrate surface, and this gate insulator is formed by inorganic insulating material.
12. the manufacture method of liquid crystal indicator as claimed in claim 11 is characterized in that: also be formed with passivation layer on this source/drain electrode and the semiconductor island, this passivation layer is also formed by inorganic insulating material.
13. the manufacture method of liquid crystal indicator as claimed in claim 12 is characterized in that: this inorganic insulation layer is this gate insulator or this passivation layer.
14. the manufacture method of liquid crystal indicator as claimed in claim 11 is characterized in that: also comprise: after the part that this inorganic insulation layer covers this photoresistance forms the projection that the surface is curved surface, at this convex surfaces deposition of reflective layer.
15. the manufacture method of liquid crystal indicator as claimed in claim 14 is characterized in that: the material in this reflection horizon is aluminium, silver or aluminium silver alloy.
16. the manufacture method of liquid crystal indicator as claimed in claim 14 is characterized in that: the source/drain electrode of the reflection horizon of this echo area and this thin film transistor (TFT) forms in same step.
17. the manufacture method of liquid crystal indicator as claimed in claim 5 is characterized in that: this etching gas is uniform etching gas.
18. the manufacture method of liquid crystal indicator as claimed in claim 5 is characterized in that: the inorganic insulation layer that does not need to form protruding position is not etched away fully.
19. the manufacture method of liquid crystal indicator as claimed in claim 5 is characterized in that: the inorganic insulation layer that does not need to form protruding position is etched away fully.
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| CN200910057266.9A CN101887199B (en) | 2009-05-15 | 2009-05-15 | Liquid crystal display device and method for manufacturing the same |
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|---|---|---|---|
| CN200910057266.9A CN101887199B (en) | 2009-05-15 | 2009-05-15 | Liquid crystal display device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013063805A1 (en) * | 2011-11-02 | 2013-05-10 | 深圳市华星光电技术有限公司 | Liquid crystal display device and manufacturing method thereof |
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| CN100334696C (en) * | 2003-01-02 | 2007-08-29 | 上海华虹（集团）有限公司 | Etching process for silicide low dielectric material |
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| WO2013063805A1 (en) * | 2011-11-02 | 2013-05-10 | 深圳市华星光电技术有限公司 | Liquid crystal display device and manufacturing method thereof |
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