CN101834173A - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
- Publication number
- CN101834173A CN101834173A CN201010107319A CN201010107319A CN101834173A CN 101834173 A CN101834173 A CN 101834173A CN 201010107319 A CN201010107319 A CN 201010107319A CN 201010107319 A CN201010107319 A CN 201010107319A CN 101834173 A CN101834173 A CN 101834173A
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- wafer
- gold
- tinted
- light
- red
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention discloses a light-emitting diode which comprises a blue wafer, a red wafer, a yellow wafer, yellow fluorescent powder arranged on light-emitting surfaces of the wafers and a drive power supply for respectively driving the wafers. The light-emitting diode has higher color rendering index and luminous flux.
Description
Technical field
The present invention relates to a kind of light source, relate in particular to a kind of light-emitting diode.
Background technology
Conventional white light large-power light-emitting diodes (LED) generally is to adopt the blue light wafer to excite single yellow fluorescent powder form luminous at present, and its shortcoming is that color rendering is relatively poor; For improving color rendering, in yellow fluorescent powder, add red fluorescence powder usually and increase red composition in the spectrum, but also have shortcoming:, cause whole white-light emitting efficient to reduce because the conversion efficiency of red fluorescence powder is low.
Prior art has been carried out unremitting effort for the color rendering index that improves LED, and has adopted same technique direction substantially: increase a red wafer, replenish the deficiency of red light portion.As No. 200720183444.9 disclosed a kind of light-emitting diode of disclosed Chinese utility model patent on September 17th, 2008 and No. 200820093895.8 disclosed a kind of power type white light light-emitting diode of disclosed Chinese utility model patent on April 22nd, 2009.In No. the 200820093895.8th, above-mentioned Chinese utility model patent, even also on the basis of blue light wafer, red wafer, yellow fluorescent powder, increase green emitting phosphor.But, claim that according to above-mentioned open source literature the color rendering index of LED also can only reach about 80 through after these effort.
For further improving the color rendering index of LED, another kind of prior art is the light-emitting diode of No. 200710009865.4 disclosed a kind of adjustable color temperature of disclosed Chinese invention patent application on August 27th, 2008 and colour developing, its basic fundamental also is to increase red wafer on the basis of blue light wafer and yellow fluorescent powder, and blue light wafer and red wafer are also proposed in the document respectively by the different driving power supply, and the operating current that can adjust each wafer is to adjust colour temperature, and the document claims like this can be so that the color rendering index of LED reaches more than 88%.
Even but make the color rendering index of LED reach more than 88%, still obvious with other conventional light source or natural white light gap, market demands providing a kind of color rendering index and the higher LED of luminous flux urgently, to meet the demands.
Summary of the invention
The technical problem that the present invention mainly solves provides a kind of color rendering index and the higher light-emitting diode of luminous flux.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of light-emitting diode is provided, comprise integrated encapsulation blue light wafer, red wafer, gold-tinted wafer, be arranged at the gold-tinted fluorescent material of above-mentioned wafer exiting surface and the driving power that drives above-mentioned each wafer respectively.
Wherein, at least one in the described driving power that drives above-mentioned each wafer respectively can be adjusted power supply for power output.
Wherein, the driving power of corresponding respectively described red wafer and gold-tinted wafer is that power output can be adjusted power supply.
Wherein, emission wavelength, power and the operating current of described blue light wafer, red wafer and gold-tinted wafer are respectively:
Blue light wafer: 455～465nm, 0.8～1.2W, 300～400mA;
Red wafer: 630～670nm, 0.3～0.7W, 0～150mA;
Gold-tinted wafer: 570～590nm, 0.03～0.07W, 0～50mA.
Wherein, the concrete power and the operating current of described blue light wafer, red wafer and gold-tinted wafer are respectively:
Blue light wafer: 1W, 350mA;
Red wafer: 0.5W, 100mA;
Gold-tinted wafer: 0.05W, 50mA.
Wherein, the emission wavelength of described gold-tinted fluorescent material is between 570～590nm.
Wherein, comprise support bowl cup, described blue light wafer, red wafer and gold-tinted wafer are fixed in the support bowl cup, and the blue light wafer is positioned in the middle of red wafer and the gold-tinted wafer.
Wherein, the only corresponding described blue light wafer exiting surface of described gold-tinted fluorescent material is provided with.
Wherein, the cup end of described support bowl cup is circular, and described blue light wafer, red wafer and gold-tinted wafer are fixed on the cup end central authorities of support bowl cup, and the cup of described support bowl cup is equipped with a plurality of electrodes that connect described each wafer respectively at the end.
The invention has the beneficial effects as follows: be different from the lower and situation of the market demands that are difficult to meet the demands of prior art LED color rendering index, the present invention is on the basis of the existing light-emitting diode that is made of blue light wafer and red wafer, set up the gold-tinted wafer, and provide the power that drives above-mentioned each wafer respectively arrogant to each little driving power, the gold-tinted wafer of wherein setting up can remedy merely the deficiency by the color rendering index of blue light and LED that red wafer constitutes, and can improve brightness, overcome prior art and only set up the technology prejudice of red wafer for improving color rendering all the time, for the LED technical development provides another kind of thinking;
Practice is proof also, and in adopting one embodiment of the present of invention, the color rendering index of LED can reach more than 95%, and near natural white light level, the lifting of technique effect is very obvious.
Description of drawings
Fig. 1 is the front schematic view of light-emitting diode embodiment of the present invention;
Fig. 2 is the spectrogram that prior art blue light wafer adds the LED of common gold-tinted fluorescent material;
Fig. 3 is the spectrogram that prior art blue light wafer, yellow wafer add the LED of common gold-tinted fluorescent material;
Fig. 4 is the spectrogram among embodiment of light-emitting diode of the present invention;
Fig. 5 is a light-emitting diode of the present invention spectrogram when regulating the various operating current of red wafer;
Fig. 6 is a light-emitting diode of the present invention spectrogram when regulating the various operating current of gold-tinted wafer.
Embodiment
By describing technology contents of the present invention, structural feature in detail, realized purpose and effect, give explanation below in conjunction with execution mode and conjunction with figs. are detailed.
See also Fig. 1, light-emitting diode embodiment of the present invention comprises:
The blue light wafer 10 of integrated encapsulation, red wafer 20, gold-tinted wafer 30, the driving power (figure does not show) that is arranged at the gold-tinted fluorescent material of above-mentioned wafer exiting surface and drives above-mentioned each wafer respectively.
During work, each driving power is respectively described blue light wafer 10, red wafer 20,30 power supplies of gold-tinted wafer, wherein, blue light wafer 10 sends blue light, the part blue light is converted to the yellow light that is mainly of spectrum broad by described gold-tinted fluorescent material, because gold-tinted can stimulate ruddiness and green glow acceptor in the naked eyes, mixes other a part of blue light that blue light wafer 10 sends again, and light-emitting diode is seemed just as sending white light, wherein, red wafer 20 is sent ruddiness, directly is the human eye finding, replenishes the spectrum in red field, in addition, gold-tinted wafer 30 sends gold-tinted, is the human eye finding directly, has remedied owing to the deficiency that obtains gold-tinted through the fluorescent material conversion.
Below as can be seen, the present invention is on the basis of the existing light-emitting diode that is made of blue light wafer 10 and red wafer 20, set up gold-tinted wafer 30, and provide the power that drives above-mentioned each wafer respectively arrogant to each little driving power, the gold-tinted wafer of wherein setting up 30 can remedy simple deficiency by blue light and the color rendering index of LED that red wafer 20 constitutes, and can improve brightness, overcome prior art and only set up the technology prejudice of red wafer 20 for improving color rendering all the time, for the LED technical development provides another kind of thinking.
In another embodiment, at least one in the described driving power that drives above-mentioned each wafer respectively can be adjusted power supply for power output.By the mode of wafer adjustable power, can accurately adjust the ratio of each wafer luminous quantity, cooperate gold-tinted wafer 30 to realize the function of high color rendering index (CRI).Offer the power of blue light wafer 10 such as scalable, can realize by the mode of adjusting electric current.
In a further embodiment, the driving power of corresponding respectively described red wafer 20 and gold-tinted wafer 30 is that power output can be adjusted power supply, by adjusting the real work power of red wafer 20 and gold-tinted wafer 30, can directly carry out the adjusting of amount of light to gold-tinted and red light portion, the ratio that makes itself and blue light go out light reaches the most accurate requirement.
Such as, the power that described driving power is respectively blue light wafer 10, red wafer 20 and gold-tinted wafer 30 to be provided is arranged from big to small, and emission wavelength, power and the operating current of described blue light wafer 10, red wafer 20 and gold-tinted wafer 30 are respectively:
Blue light wafer 10:455～465nm, 0.8～1.2W, 300～400mA;
Red wafer 20:630～670nm, 0.3～0.7W, 0～150mA;
Gold-tinted wafer 30:570～590nm, 0.03～0.07W, 0～50mA.
Further, the concrete power of described blue light wafer 10, red wafer 20 and gold-tinted wafer 30 and operating current can be respectively:
Blue light wafer 10:1W, 350mA;
Red wafer 20:0.5W, 100mA;
Gold-tinted wafer 30:0.05W, 50mA.
The emission wavelength of described gold-tinted fluorescent material is between 570～590nm.
Consult Fig. 2, Fig. 3 and Fig. 4, facts have proved, among the embodiment of above-mentioned each wafer operating current of concrete qualification, the color rendering index of LED can reach more than 95%, and near natural white light level, the lifting of technique effect is very obvious.
Consult Fig. 5 and Fig. 6, for the blue light wafer provides the drive current of 350mA, and the operating current of each self-regulation red wafer 20 or gold-tinted wafer 30 can be realized different illuminations, colour developing, light quantity requirement, also can realize optimum luminescent properties easily.
Consult Fig. 1, light-emitting diode of the present invention also comprises support bowl cup 40, and described blue light wafer 10, red wafer 20 and gold-tinted wafer 30 are fixed in the support bowl cup 40, and blue light wafer 10 is positioned in the middle of red wafer 20 and the gold-tinted wafer 30.By such location matches, can embody blue light wafer 10 is that master, ruddiness and gold-tinted wafer 30 are the luminous requirement of assisting, and realizes optimum illumination effect.
In one embodiment, the only corresponding described blue light wafer 10 exiting surface settings of described gold-tinted fluorescent material because in each wafer only blue light wafer 10 need the cooperation of gold-tinted fluorescent material, and gold-tinted, red wafer 20 exiting surfaces do not have gold-tinted fluorescent material, can not block the luminous of these two wafers, improve brightness.
In one embodiment, the cup end of described support bowl cup 40 is circular, described blue light wafer 10, red wafer 20 and gold-tinted wafer 30 are fixed on the cup end central authorities of support bowl cup 40, and the cup of described support bowl cup 40 is equipped with a plurality of electrodes 50 that connect described each wafer respectively at the end.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (9)
1. a light-emitting diode is characterized in that, comprise integrated encapsulation blue light wafer, red wafer, gold-tinted wafer, be arranged at the gold-tinted fluorescent material of above-mentioned wafer exiting surface and the driving power that drives above-mentioned each wafer respectively.
2. light-emitting diode according to claim 1 is characterized in that: at least one in the described driving power that drives above-mentioned each wafer respectively can be adjusted power supply for power output.
3. light-emitting diode according to claim 2 is characterized in that: the driving power of corresponding respectively described red wafer and gold-tinted wafer is that power output can be adjusted power supply.
4. light-emitting diode according to claim 3 is characterized in that, emission wavelength, power and the operating current of described blue light wafer, red wafer and gold-tinted wafer are respectively:
Blue light wafer: 455～465nm, 0.8～1.2W, 300～400mA;
Red wafer: 630～670nm, 0.3～0.7W, 0～150mA;
Gold-tinted wafer: 570～590nm, 0.03～0.07W, 0～50mA.
5. light-emitting diode according to claim 4 is characterized in that, the concrete power and the operating current of described blue light wafer, red wafer and gold-tinted wafer are respectively:
Blue light wafer: 1W, 350mA;
Red wafer: 0.5W, 100mA;
Gold-tinted wafer: 0.05W, 50mA.
6. light-emitting diode according to claim 5 is characterized in that: the emission wavelength of described gold-tinted fluorescent material is between 570～590nm.
7. according to each described light-emitting diode of claim 1 to 5, it is characterized in that: comprise support bowl cup, described blue light wafer, red wafer and gold-tinted wafer are fixed in the support bowl cup, and the blue light wafer is positioned in the middle of red wafer and the gold-tinted wafer.
8. light-emitting diode according to claim 7 is characterized in that: the only corresponding described blue light wafer exiting surface of described gold-tinted fluorescent material is provided with.
9. light-emitting diode according to claim 7, it is characterized in that: the cup end of described support bowl cup, is for circular, described blue light wafer, red wafer and gold-tinted wafer are fixed on the cup end central authorities of support bowl cup, and the cup of described support bowl cup is equipped with a plurality of electrodes that connect described each wafer respectively at the end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010107319A CN101834173A (en) | 2010-02-01 | 2010-02-01 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010107319A CN101834173A (en) | 2010-02-01 | 2010-02-01 | Light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| CN101834173A true CN101834173A (en) | 2010-09-15 |
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| CN201010107319A Pending CN101834173A (en) | 2010-02-01 | 2010-02-01 | Light-emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543989A (en) * | 2012-03-19 | 2012-07-04 | 深圳市聚飞光电股份有限公司 | LED(light-emitting diode)device |
| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
| US10373535B2 (en) | 2013-12-31 | 2019-08-06 | Ultravision Technologies, Llc | Modular display panel |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
-
2010
- 2010-02-01 CN CN201010107319A patent/CN101834173A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543989A (en) * | 2012-03-19 | 2012-07-04 | 深圳市聚飞光电股份有限公司 | LED(light-emitting diode)device |
| US10248372B2 (en) | 2013-12-31 | 2019-04-02 | Ultravision Technologies, Llc | Modular display panels |
| US10373535B2 (en) | 2013-12-31 | 2019-08-06 | Ultravision Technologies, Llc | Modular display panel |
| US10380925B2 (en) | 2013-12-31 | 2019-08-13 | Ultravision Technologies, Llc | Modular display panel |
| US10410552B2 (en) | 2013-12-31 | 2019-09-10 | Ultravision Technologies, Llc | Modular display panel |
| US10540917B2 (en) | 2013-12-31 | 2020-01-21 | Ultravision Technologies, Llc | Modular display panel |
| US10871932B2 (en) | 2013-12-31 | 2020-12-22 | Ultravision Technologies, Llc | Modular display panels |
| US10706770B2 (en) | 2014-07-16 | 2020-07-07 | Ultravision Technologies, Llc | Display system having module display panel with circuitry for bidirectional communication |
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Application publication date: 20100915 |