CN101750778A - Display Devices and Electronic Devices - Google Patents
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- CN101750778A CN101750778A CN200910168137A CN200910168137A CN101750778A CN 101750778 A CN101750778 A CN 101750778A CN 200910168137 A CN200910168137 A CN 200910168137A CN 200910168137 A CN200910168137 A CN 200910168137A CN 101750778 A CN101750778 A CN 101750778A
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Abstract
The invention provides a display device and an electronic device. The display device comprises a first substrate, an optical structure layer, a display layer, a first electrode and a second electrode. The first substrate comprises a pixel area, and the optical structure layer is formed on the first substrate and comprises a flat structure and a non-flat structure, wherein the flat structure is positioned in a local area of the pixel area, and the non-flat structure is positioned in the rest area of the pixel area. The first electrode is formed on the optical structure layer, the display layer is formed on the first electrode layer, and the second electrode is formed on the display layer. The display device can be applied to electronic devices. The invention can improve the optical effect and reduce the problem of poor contrast so as to ensure the display quality.
Description
Technical field
The present invention relates to a kind of display device and electronic installation, particularly relate to a kind of display device and electronic installation with local non-planar structures.
Background technology
In recent years, along with the progress of science and technology, many different display device, for example LCD (Liquid Crystal Display, LCD) or electroluminescence (ElectroLuminenscence, EL) display device has been widely used in flat-panel screens.
Please refer to Fig. 1, it shows the partial cutaway schematic according to a kind of existing display device.With electroluminescent display 900 is that example illustrates, electroluminescent display 900 comprises substrate 901, insulation course 902, anode 903, electric hole transport layer 904, luminescent layer 905, electron transfer layer 906 and negative electrode 907.Insulation course 902, anode 903, electric hole transport layer 904, luminescent layer 905, electron transfer layer 906 and negative electrode 907 are to be stacked in order on the substrate 901, wherein all surfaces of insulation course 902 has concaveconvex structure, thereby all surfaces of the structural sheet of follow-up institute storehouse also can have concaveconvex structure.Therefore, electroluminescent display 900 can utilize this concaveconvex structure to increase the actual light-emitting area of luminescent layer 905, and then improves the luminosity of display device 900.
Yet the concaveconvex structure of above-mentioned display device 900 influences the demonstration contrast easily, causes the decline of overall contrast, thereby influences the display quality of above-mentioned display device 900.
Summary of the invention
One of purpose of the present invention is to provide a kind of display device, it is characterized in that described display device comprises:
First substrate comprises pixel region;
Optical structure layers is formed on described first substrate, and comprises that flat structures and non-planar structures, wherein said flat structures are to being positioned at the regional area of described pixel region, and described non-planar structures is to being positioned at all the other zones of described pixel region;
First electrode is formed on the described optical structure layers;
Display layer is formed on described first electrode layer; And
Second electrode is formed on the described display layer.
Described display device can be applicable in the electronic installation.
Display device of the present invention and electronic installation can improve optical effect, reduce the not good problem of contrast simultaneously, to guarantee display quality.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 shows the diagrammatic cross-section according to the display panels of one embodiment of the invention;
Fig. 2 shows the partial cutaway schematic according to the display device of the first embodiment of the present invention;
Fig. 3 A to Fig. 3 D show according to optical structure layers of the present invention in pixel region on look synoptic diagram;
Fig. 4 shows the partial cutaway schematic according to the display device of the second embodiment of the present invention;
Fig. 5 shows the partial cutaway schematic according to the display device of the third embodiment of the present invention;
Fig. 6 shows the partial cutaway schematic according to the display device of the fourth embodiment of the present invention;
Fig. 7 A and Fig. 7 B show the partial cutaway schematic according to the display device of the fifth embodiment of the present invention; And
Fig. 8, its demonstration has the electronic installation according to display device of the present invention.
Embodiment
Please refer to Fig. 2, it shows the partial cutaway schematic according to the display device of the first embodiment of the present invention.The display device 100 of present embodiment can be self-luminous display device, Organic Light Emitting Diode (OLED) display device for example, and it comprises first substrate 110 and second substrate 120.Reflection horizon 130, optical structure layers (Optical Enhance Layer) 140, flatness layer 150, first electrode 160, display layer 170 and second electrode 180 can be stacked on first substrate 110 in order, and between first substrate 110 and second substrate 120.
As shown in Figure 2, first substrate 110 of present embodiment can for example be glass substrate, pliability plastic base, wafer substrate or heat-radiating substrate, first substrate 110 can comprise a plurality of pixel region 111 some signal line (not illustrating) and switch module (not illustrating), signal wire can be in order to transmit signal, for example sweep signal, data-signal or test signal.These signal wires for example can be the data line of arranged perpendicular and the gate line of horizontal arrangement, and it disposes interlacedly, and form the pixel region 111 that matrix form is arranged, in order to show image.Switch module for example is a thin film transistor (TFT) (TFT), it is arranged in each pixel region 111, and be electrically connected at adjacent signal wire, and first electrode 160 also is formed in each pixel region 111, and be electrically connected at switch module, that is first electrode 160 can be pixel electrode, it can come the conducting electric current via the control of switch module.
As shown in Figure 2, second substrate 120 of present embodiment can for example be glass substrate or pliability plastic base, in order to encapsulation and protection display device 100.Second substrate 120 can comprise light shield layer 121 and chromatic filter layer 122.The material of light shield layer 121 for example is metal (for example chromium), graphite or resin type material, and it is formed on second substrate 120, and can form black matrix" (Black Matrix) structure, in order to separate the chromatic filter layer 122 of different colours.Chromatic filter layer 122 is formed with the chromatic photoresist material of different colours respectively, in order to form the chromatic image effect.At this moment, the display layer 170 preferable white lights that provide come by chromatic filter layer 122, and form colored light.In one embodiment, display layer 170 also can directly provide the coloured light of different colours, and at this moment, second substrate 120 can omit chromatic filter layer 122 is set.
The display device 100 of present embodiment can more comprise unit (Spacer) 190 at interval, in order to be supported between first substrate 110 and second substrate 120, the material of unit 190 for example is at interval: silicon, macromolecular material or photoresist, it can for example spherical in shape or cylindricality.
The reflection horizon 130 of present embodiment is made with highly reflective material, send towards second substrate 120 in order to reflection ray, this highly reflective material for example is silver, aluminium, gold, chromium, copper, indium, iridium, nickel, platinum, rhenium, rhodium, tin, tantalum, tungsten, manganese, above-mentioned any alloy or anti-yellow and heat-resisting white reflection paint vehicle (as titania).
The optical structure layers 140 of present embodiment is to make by insulating material, for example: high-temperature resistance plastice, epoxy resin, glass fibre, poly--neighbour-benzenedicarboxamide (PPA), boron nitride, aluminium nitride, silicon nitride, silicon oxynitride, monox, aluminium oxide, titanium dioxide, calcium oxide, alundum (Al, silicon, gallium arsenide, pottery or its combination in any, it is formed between first substrate 110 and first electrode 160.In the present embodiment, optical structure layers 140 can be formed on the reflection horizon 130, and at this moment, optical structure layers 140 can have light transmission.
As shown in Figure 2, the optical structure layers 140 of present embodiment includes flat structures 141 and non-planar structures 142, wherein flat structures 141 is to being positioned at the regional area of each pixel region 111, and non-planar structures 142 is to being positioned at all the other zones of each pixel region 111, that is in the whole zone of optical structure layers 140, be formed with flat structures 141 and non-planar structures 142 simultaneously corresponding to pixel region 111.In this zone, non-planar structures 142 shared area ratios are about 10～90%.Non-planar structures 142 can be made up of a plurality of sizes identical or different continuous dimpling portion or nick portion, and it can utilize the patterning modes such as exposure, etching of developing to form.The size of each dimpling portion or nick portion is about 2～5 μ m, and can for example be hemispherical, taper, pyramid, rectangular block structure or any suitable shape.
Please refer to Fig. 2 and Fig. 3 A to Fig. 3 D, Fig. 3 A to Fig. 3 D show according to optical structure layers of the present invention in pixel region on look synoptic diagram.Shown in Fig. 2 and Fig. 3 A, under the non-flat forms district is situation to the subregion that is positioned at pixel region 111, non-planar structures 142 can be to being positioned at the outer peripheral areas of pixel region 111, and can expand to pixel region 111 zone in addition, that is also to being positioned at the zone of light shield layer 121, and flat structures 141 also can be to being positioned at the zone line of pixel region 111.Shown in Fig. 3 B, in another embodiment, non-planar structures 142 can be to being positioned at the zone line of pixel region 111, and flat structures 141 can be to being positioned at the outer peripheral areas of pixel region 111.So be not limited thereto, in certain embodiments, flat structures 141 can be arbitrary form with the configuration mode of non-planar structures 142, for example circular layer alternative form (shown in Fig. 3 C) or chessboard alternative form (shown in Fig. 3 D).
As shown in Figure 2, the flatness layer 150 of present embodiment is to be formed on the optical structure layers 140, and it is made that flatness layer 150 can be organic material or oxidation material with light transmission.First electrode 160 and second electrode 180 are can transparent conductive material made, for example: ITO, IZO, AZO, GZO, TCO or ZnO.In the present embodiment, display layer 170 can be the organic luminous layer of organic LED display device (OLED), and first electrode 160 is to be formed on the flatness layer 150, and in order to as anode, and second electrode 180 is to be formed on the display layer 170, in order to as negative electrode.At this moment, display layer 170 can comprise electric hole input horizon, electric hole transport layer, luminous material layer (for example white-light organic light-emitting material layer), electron transfer layer and electron injecting layer, and it is stacked on first electrode 160 in regular turn.Display layer 170 can come driven for emitting lights via the electric current that switch module provided, and is luminous to the outside via second electrode 180 and second substrate 120 of printing opacity again.
Therefore, carry out image when showing when the display device 100 of present embodiment, display layer 170 can emit beam, white light for example, and can form coloured light via the chromatic filter layer 122 of second substrate 120.And towards the light of first substrate 110, can reflect via reflection horizon 130, and can improve optical effect via the non-planar structures 142 of optical structure layers 140, with diffusion light, improve light luminance and increase visible angle.Simultaneously, because non-planar structures 142 only is formed on the position to the subregion that is positioned at pixel region 111, thereby can reduce the not good problem of contrast, to guarantee display quality.
Please refer to Fig. 4, it shows the partial cutaway schematic according to the display device of the second embodiment of the present invention.Compared to first embodiment, the display device 100 of second embodiment can not be provided with flatness layer, and at this moment, first electrode 260 is formed directly on the optical structure layers 140.At this moment, the surface that is positioned at the display layer 170 on the non-planar structures 142 can utilize it to form thickness and select whether to form non-planar surface, that is when the thickness of display layer 170 bigger, and when being enough to fill and lead up this non-planar structures 142, then display layer 170 can be whole flat surfaces; Otherwise, less when the thickness of display layer 170, and be not enough to fill and lead up this non-planar structures 142, then display layer 170 can form the part non-planar surface, increasing the light-emitting area of display layer 170, and can promote luminosity.
Please refer to Fig. 5, it shows the partial cutaway schematic according to the display device of the third embodiment of the present invention.Compared to first embodiment, the non-planar structures 342 of the optical structure layers 340 of the display device 100 of the 3rd embodiment can by a plurality of independently, the discontinuous dimpling portion that forms formed, it can be formed on the reflection horizon 130, and be arranged in partial pixel district 111, and can form flat surfaces 341 (flat structures) between the dimpling portion of non-planar structures 342.When form non-planar structures 342 this slightly during protuberance, can form an insulation material layer (not illustrating) earlier on the reflection horizon 130 or first substrate 110, the patterning step such as exposure, etching of again this insulation material layer being developed, forming this protuberance slightly, thereby form the non-planar structures 342 of optical structure layers 340.
Please refer to Fig. 6, it shows the partial cutaway schematic according to the display device of the fourth embodiment of the present invention.Compared to first embodiment, the optical structure layers 440 of the display device 100 of the 4th embodiment is directly to be formed on first substrate 110, and reflection horizon 430 is to be formed on the optical structure layers 440.At this moment, the reflection horizon 430 that is positioned on the non-planar structures 442 can have non-planar surface, thereby can increase the reflective surface area in reflection horizon 430, to promote luminosity, and, thereby can guarantee the demonstration contrast of display device 100 because non-planar structures 442 only is formed on the position to the subregion that is positioned at pixel region 111.Again, at this moment, optical structure layers 440 can select not have light transmission, and display device 100 also optionally is provided with flatness layer 150 (as shown in Figure 6) on reflection horizon 430, perhaps also can not be provided with flatness layer.When display device 100 was not provided with flatness layer, being positioned at the reflection horizon 430 on the optical structure layers 440 and first electrode 160 can be with the non-planar structures 442 of optical structure layers 440, and has non-planar surface.
Please refer to Fig. 7 A and Fig. 7 B, it shows the partial cutaway schematic according to the display device of the fifth embodiment of the present invention.Display device compared to the foregoing description is a self-luminous display device, and the display device 500 of the 5th embodiment for example is a transflective liquid crystal display device, and at this moment, display device 500 can more comprise backlight module (not illustrating), in order to provide backlight.Display layer 570 is a liquid crystal layer, each pixel region 511 comprises penetrating region 514 and echo area 515, and can omit flatness layer, optical structure layers 540 is to be formed on first substrate 110, and the non-planar structures 542 of optical structure layers 540 can be to Zone Full (shown in Fig. 7 A) or subregion (shown in Fig. 7 B) that is positioned at echo area 515, and the flat structures 541 of optical structure layers 540 also can not be formed on the penetrating region 514, and together is formed at echo area 515 (shown in Fig. 7 B) with non-planar structures 542.First electrode 560 comprises through electrode 561 and reflecting electrode 562.Through electrode 561 is that transparent conductive material is made, and is formed at penetrating region 514.Reflecting electrode 562 is that the high reflectance conductive material is made, for example: and metal materials such as Al, Ag, Cr, Mo, Ti or AlNd, and be formed at echo area 515.And second electrode 180 is to be arranged on second substrate 120, in order to form the deflection that electric field is controlled liquid crystal molecule with first electrode 560.Because reflecting electrode 562 is to be formed on the non-planar structures 542, thus reflecting electrode 562 can be corresponding to non-planar structures 542 the tool non-planar surface, and then increase the reflective surface area of reflecting electrode 562.When display device 500 was carried out the image demonstration, the non-planar structures 542 of optical structure layers 540 can increase the reflective surface area of reflecting electrode 562, uses and improves optical effect, and promoting display brightness also increases visible angle.
Please refer to Fig. 8, its demonstration has the electronic installation according to display device of the present invention.Display device 100 of the present invention or 500 can be the part of electronic installation 600.This electronic installation 600 comprises that according to display device 100 of the present invention and control module 601 control module 601 is to be electrically connected at display device 100, to display device 100, uses making display device 100 show images with transmission signal.This electronic installation 600 can be display on mobile phone, digital camera, personal digital assistant, mobile computer, desktop PC, TV, satellite navigation, the car, aviation with display or Portable DVD projector etc.
By the embodiment of the invention described above as can be known, display device of the present invention and electronic installation can form the part non-planar structures and improve optical effect, and reduce the not good problem of contrast, to guarantee display quality.
In sum; though the present invention discloses as above with preferred embodiment; but described preferred embodiment is not in order to restriction the present invention; the those of ordinary skill in described field; without departing from the spirit and scope of the present invention; all can do various changes and retouching, so protection scope of the present invention is as the criterion with the scope that claim defines.
Claims (10)
Applications Claiming Priority (2)
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| US12110508P | 2008-12-09 | 2008-12-09 | |
| US61/121,105 | 2008-12-09 |
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| CN101750778A true CN101750778A (en) | 2010-06-23 |
| CN101750778B CN101750778B (en) | 2016-04-06 |
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| CN200910168137.7A Active CN101750778B (en) | 2008-12-09 | 2009-08-24 | Display Devices and Electronic Devices |
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| CN (1) | CN101750778B (en) |
| TW (1) | TWI396151B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996694A (en) * | 2014-04-25 | 2014-08-20 | 京东方科技集团股份有限公司 | OLED display and preparation method thereof |
| WO2015196517A1 (en) * | 2014-06-23 | 2015-12-30 | 深圳市华星光电技术有限公司 | Oled display structure and manufacturing method therefor |
| CN105452937A (en) * | 2013-08-06 | 2016-03-30 | 株式会社电装 | Head-up display device for vehicle |
| CN106058068A (en) * | 2016-02-29 | 2016-10-26 | 京东方科技集团股份有限公司 | Organic light-emitting diode and manufacturing method thereof, display substrate and manufacturing method thereof and display device |
| CN108417598A (en) * | 2018-01-31 | 2018-08-17 | 昆山国显光电有限公司 | The preparation method of OLED display panel, packaging method and organic film |
| WO2021088130A1 (en) * | 2019-11-07 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4683688B2 (en) * | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing liquid crystal display device |
| JP3875125B2 (en) * | 2001-04-11 | 2007-01-31 | シャープ株式会社 | Liquid crystal display |
| JP2002341342A (en) * | 2001-05-21 | 2002-11-27 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
| EP1279994A3 (en) * | 2001-07-27 | 2003-10-01 | Alps Electric Co., Ltd. | Semitransparent reflective liquid-crystal display device |
| JP3714244B2 (en) * | 2001-12-14 | 2005-11-09 | セイコーエプソン株式会社 | Transflective / reflective electro-optical device manufacturing method, transflective / reflective electro-optical device, and electronic apparatus |
| JP4039232B2 (en) * | 2002-12-20 | 2008-01-30 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| CN1648722A (en) * | 2004-01-20 | 2005-08-03 | 鸿扬光电股份有限公司 | Ultra-miniature Transflective Vertical Alignment LCD with Wide Viewing Angle |
| US7595506B2 (en) * | 2005-03-17 | 2009-09-29 | Hitachi Displays, Ltd. | Liquid crystal display device and display device |
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2009
- 2009-08-20 TW TW98128107A patent/TWI396151B/en not_active IP Right Cessation
- 2009-08-24 CN CN200910168137.7A patent/CN101750778B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105452937A (en) * | 2013-08-06 | 2016-03-30 | 株式会社电装 | Head-up display device for vehicle |
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| WO2015196517A1 (en) * | 2014-06-23 | 2015-12-30 | 深圳市华星光电技术有限公司 | Oled display structure and manufacturing method therefor |
| CN106058068A (en) * | 2016-02-29 | 2016-10-26 | 京东方科技集团股份有限公司 | Organic light-emitting diode and manufacturing method thereof, display substrate and manufacturing method thereof and display device |
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| US10164216B2 (en) | 2016-02-29 | 2018-12-25 | Boe Technology Group Co., Ltd. | Base substrate with polymer material having a gradient distribution for organic light emitting diode |
| CN108417598A (en) * | 2018-01-31 | 2018-08-17 | 昆山国显光电有限公司 | The preparation method of OLED display panel, packaging method and organic film |
| WO2021088130A1 (en) * | 2019-11-07 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201023123A (en) | 2010-06-16 |
| CN101750778B (en) | 2016-04-06 |
| TWI396151B (en) | 2013-05-11 |
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