CN1016191B - Production of high-oxygen-content silicon monocrystal substrate for semiconductor devices - Google Patents
Production of high-oxygen-content silicon monocrystal substrate for semiconductor devicesInfo
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- CN1016191B CN1016191B CN86106346A CN86106346A CN1016191B CN 1016191 B CN1016191 B CN 1016191B CN 86106346 A CN86106346 A CN 86106346A CN 86106346 A CN86106346 A CN 86106346A CN 1016191 B CN1016191 B CN 1016191B
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- silicon
- crystal
- crucible
- oxygen level
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
A method for producing silicon substrates includes growing the silicon crystal body at a relatively high rate of growth. It has been found that the growth rate of the silicon crystal body exerts substantial influence upon generation of crystal defects in the silicon crystal body or silicon substrate. Furthermore, the oxygen concentration in the silicon crystal body or the silicon substrate is significantly higher than that in conventional silicon crystals or substrates. The high growth rate of the silicon crystal body suppresses separation of the oxygen from the crystal body. This reduces the number of defects or faults formed in the crystal body during heat treatment during production of the semiconductor devices. In the preferred process, according to the present invention, the growth rate of the silicon crystal body is greater than or equal to 1.2 mm/min. Furthermore, the preferred oxygen concentration in the grown silicon crystal body is selected to be greater than or equal to 1.8 x 10<18>cm<-3>.
Description
The present invention relates generally to adsorb the silicon single crystal substrate of a large amount of metallic impurity.In addition, the invention still further relates to the production method of silicon single crystal substrate with higher oxygen content.Specifically, the present invention relates to technology, produce the method and the equipment thereof of elevated oxygen level silicon wafer with crystal growth.
Silicon single crystal substrate has been widely used in produces various semiconducter device.In this semiconducter device, it is minimum generally preferably stray current to be reduced to.Known, stray current can lean on a kind of so-called intrinsic gettering (I.G.) effect to reduce.And the I.G. effect can realize by the defective that forms in the silicon substrate internal structure.
As is generally known silicon substrate can be obtained by silicon single crystal, this silicon single crystal then is by as cutting Kraus process (abbreviating " CZ " method later on as), goes out silicon single crystal from the fusion polycrystalline silicon growth and makes.In the CZ method, silicon single crystal is to be pulled out lentamente from the molten bath of polysilicon.Silicon substrate then is to obtain by silicon single crystal cutting or " compressing tablet " that will polish.
Contain a large amount of oxygen in the silicon single crystal of making.Oxygen in the silicon single crystal can cause that defective or crystal dislocation produce, as dislocation loop, and stacking fault or the like, its reason is during heating treatment, due to the oxygen in the silicon substrate is emanated.Defective in the semiconducter device finished product can reduce the rated characteristic of device, specifically, can reduce its voltage breakdown, increases its stray current.As a result, reduce yield of semiconductor devices significantly.
On the other hand, have been found that the defective in the semiconducter device,, can play the absorption metallic impurity by air-breathing or I.G. effect in so-called.For example, in semiconducter device, the surface of silicon substrate is main active zone, such as, isolated-gate field effect transistor (IGFET) (MOS-FET ' S) or adopt in the integrated circuit of MOS-FET ' S, defective in the silicon substrate except main active zone all demonstrates the I.G. effect, from active zone absorption metallic impurity.This helps to reduce the stray current of semiconducter device.
Yet, realize in mass production that uniform I.G. effect is difficult.For example, under the situation that adopts traditional CZ method growing silicon single crystal, the intensity of defective often makes top (being the top of crystal growth) and tail end (being the end of crystal growth) sizable difference occur because of the relation of temperature hysteresis in the crystal.In addition, though elevated oxygen level is favourable to improving the I.G. effect, when too high oxygen level, defective even can form on the surface of semiconducter device, the result, semi-conductive performance is understood aforesaid degenerating.And, in some semi-conductive production method, must be noted that the content of strict control oxygen, perhaps,, also must implement special I.G. and handle from producing the required heat-treat condition of some semiconducter device.
Therefore, in the technology of the silicon substrate of making semiconductor device by using effectively, how to obtain one and be enough to improve the I.G. effect, so that reduction stray current, and to the defective in the semiconducter device finished product, particularly after thermal treatment, can not produce the quite high oxygen level of harmful effect, be the problem of a continuity.
So a general purpose of the present invention is that the silicon substrate and a production method thereof that can overcome the problems referred to above is provided.
Another object of the present invention is, a kind of silicon substrate is provided, and it contains higher oxygen level, and can be because of the segregation of oxygen, dislocation loop, and stacking faults etc. are former thereby reduce the characteristic of silicon substrate.
Another purpose of the present invention is, a raw-material method for producing silicon of producing as semiconducter device is provided, and this method can provide high casting yield, does not reduce the characteristic of finished product again.
In order to realize above-mentioned purpose with other, adopt a kind of method of producing silicon substrate, be included in the method that is higher than growing silicon single crystal body under the conventional speeds.The speed of growth that has been found that silicon single crystal has remarkable influence to generation of defects in the silicon single crystal.In addition, according to the present invention, the oxygen level in silicon single crystal or the silicon substrate is higher significantly than all traditional silicon single crystaies or the oxygen level in the substrate.Quicken the growth of silicon single-crystal, suppress the segregation of oxygen in the single crystal significantly.Can reduce in the semiconducter device production process during the thermal treatment, in single crystal, produce the quantity of defective or dislocation.
In according to the preferred method of the present invention, the speed of growth of silicon single crystal is more than or equal to 1.2 millimeters/minute.In addition, the best oxygen content in the silicon single crystal of growth is more than or equal to 1.8 * 10
18/ centimetre
3
According to the present invention, oxygen level is more than or equal to 1.8 * 10
18/ centimetre
3Silicon substrate, can obtain to be less than or equal to 1 * 10
-10Stray current.
According to viewpoint of the present invention, one contains the method for producing silicon of suitable elevated oxygen level for semiconductor device by using, may further comprise the steps:
Under the quite high speed of growth, growing silicon single crystal from melt silicon, and the selected speed of growth can avoid oxygen to emanate from monocrystalline in the heat treatment process that semiconducter device is thereafter produced; And make silicon substrate by silicon single-crystal.
The optimum growh speed of silicon single-crystal is more than or equal to 1.2 millimeters/minute.On the other hand, the best oxygen content in the silicon substrate is more than or equal to 1.8 * 10
18/ centimetre
3Further preferred, the speed of growth of silicon single-crystal preferably be similar to 1.5 millimeters/assign to 2.1 millimeters/minute scope.
In a preferred embodiment, the silicon monocrystal growth operation may further comprise the steps: silicon is placed in the crucible; Heating makes silicon keep being fluidised form; Little by little lift out silicon single-crystal the molten silicon in crucible.
In the step of heating silicon, must be sufficient to the heat that it provides in the curing that prevents silicon face.Preferable is that in the stage of heating silicon, the heat that silicon face is provided is greater than the heat that the rest part that melts silicon is provided.
In another embodiment, present method also comprises a magnetic field is added to measure on the silicon.In addition, preferable methods may further include the measure that drives the crucible rotation.The rotating speed of crucible can be controlled, so that regulate the oxygen level in the silicon substrate.
According to another viewpoint of the present invention, in order to realize above-mentioned method for producing silicon, the raw-material equipment that contains the silicon single crystal of suitable elevated oxygen level of a kind of silicon substrate as semiconducter device that is used for growing comprises: a crucible, use for dress silicon; A heating unit is used for heating silicon, makes silicon keep being fluidised form; And a pulling apparatus, can be with quite high speed, the molten silicon from crucible lifts silicon single-crystal, makes in the heat treatment process of manufacturing semiconducter device subsequently, can prevent that block emanates from substrate.Best, the pulling rate of silicon single-crystal is more than or equal to 1.2 millimeters/minute.In addition, in the silicon substrate best oxygen level more than or equal to 1.8 * 10
18Centimetre
3Well heater provides enough heats, prevents that molten silicon face from solidifying.Therefore, heating unit is supplied with the heat that the heat that melts silicon face is greater than molten silicon rest part.
This equipment also comprises the device that adds a magnetic field to molten silicon.In addition, this equipment also further comprises the drive unit that makes the crucible rotation.This crucible drive unit makes crucible with variable speed rotation, so that regulate the oxygen level in the silicon wafer.
According to another viewpoint of the present invention, use oxygen level more than or equal to 1.8 * 10
18/ centimetre
3, the stray current value is less than 1 * 10
-10The silicon substrate of ampere is produced semiconducter device.
The present invention will be by following being described in detail, and the accompanying drawing of the preferred embodiments of the present invention, understood more fully.Yet they do not limit the present invention, and certain embodiments just is used for illustrating and understands the present invention.
In the accompanying drawing:
Fig. 1 is the sectional view of realizing according to the silicon single-crystal growth equipment that preferred embodiment adopted of silicon single-crystal production method of the present invention;
Fig. 2 is the skeleton view of well heater among Fig. 1;
Fig. 3 is the three-dimensional space curve figure of the mutual relationship between explanation crystalline growth velocity, oxygen level and the concentration of stacking faults;
Fig. 4 is the relation curve of heat treatment time and oxygen level;
Fig. 5 and Fig. 6 represent respectively, use according to method for producing silicon of the present invention and the result who carries out leakage current measurement by the prepared a collection of diode sample of the silicon substrate of known produced in conventional processes;
Fig. 7 be finish according to the preferred embodiment of silicon single-crystal production method of the present invention used, through the sectional view of improved concrete silicon single-crystal growth equipment.
Consult each accompanying drawing now, Fig. 1 represents, for finishing according to the used silicon single-crystal growth equipment of the preferred embodiment of silicon substrate growth method of the present invention.As Fig. 1 finding, the preferred enforcement method of silicon substrate production method comprises the growth method as the raw-material silicon single crystal of silicon substrate.According to preferable methods, the CZ method is adopted in the growth of silicon single-crystal.
In single crystal growth apparatus of the present invention, silicon 3 is fused, and it is contained in the quartz crucible 2, and quartz crucible 2 is configured in the plumbago crucible 1.Graphite heater 4 and thermal insulation material 9 are around crucible 1.Several cooling jacket 10a, 10b that add and 10c are again around thermal insulation material 9.Cooling jacket 10b have one can observation post's monocrystal pulling 6 viewport 12.A vapor pipe 13 is housed on the base plate of cooling jacket 10b, and in order to discharge rare gas element, this rare gas element is by top introducing chuck 10a, 10b and 10c, uses as protective atmosphere.An axle 8 that is fixed in crucible 1 basal surface can freely pass the osculum 10d on the cooling jacket 10a base plate, utilizes this axle to rotate, and raises or reduction crucible 1.The lower edge of well heater 4 is fixed on the ring flat-plate 14, and plate 14 itself is fixed to again on a pair of axle 15, and axle 15 then freely passes two osculum 10e and the 10f on the cooling jacket 10a base plate.Axle 15 can be in order to raise or to reduce well heater 4.The molybdenum heat screen 16 that a round shape, internal diameter are a bit larger tham monocrystalline 6 external diameters place liquid silicon 3 above, and around monocrystalline 6.In thermoscreen 16, by the chuck 7 that is loaded on pull bar 17 bottoms seed crystal is clamped, so that cylindrical monocrystalline 6 can begin growth from seed crystal 5.
In the CZ method, suppose that the solid-liquid interface between monocrystalline 6 and the liquid 3 is flat, and in monocrystalline 6, do not have radial symmetry gradient that then the maximum growth rate of monocrystalline can be expressed as follows:
V
max＝ (k)/(hρ) （ (dT)/(dX) ）
Wherein, k represents the thermal conductivity of monocrystalline 6, and h represents solidification heat, and ρ represents density, and dT/dx is shown in the thermograde of the monocrystalline solid phase of solid-liquid interface.In particular, X be meant along monocrystalline 6 major axis to distance.In above-mentioned formula, because k, h and ρ are material inherent characteristics, therefore need to increase thermograde dT/dx.To increase or to obtain the single crystal growing speed Vmax of maximum.Yet, in above-mentioned CZ method, because monocrystalline 6 is by the surface from liquid 3, the interior ancient piece of jade, round, flat and with a hole in its centre of crucible 2, and the radiant heat of well heater 4 heats, and therefore, thermograde dT/dx value must be restricted, and consequently the actual speed of growth is always smaller.
From top discussion as can be known, accelerate the speed of growth of silicon single-crystal can be by reducing the heat supplied of 4 pairs of molten silicon 3 of well heater, promptly by reducing the temperature that melts silicon and reaching.Though this has the directly proportional effect for reducing thermograde, according to Si Difan-Bo Ziman (Stefan-Boltzmann) law, but can drop to quite big degree to monocrystalline radiating heat, result, net effect increase thermograde dT/dx.But, lean on well heater 4 minimizing heat supplieds to obtain the higher speed of growth, this means that the surface potential of molten silicon must solidify, because the surface of molten silicon is exposed to the event that is cooled in the atmosphere of protecting gas in the stove.This has limited the scope that molten silicon 3 can be lowered the temperature.
The well heater 4 of preferred silicon single-crystal growth equipment is designed to and can supplies with enough heats to the surface of molten silicon 3, makes silicon keep being in a liquid state.Particularly, well heater 4 has been designed to structure preferably, the rest part more heat than molten silicon can be provided to the surface of molten silicon 3, the result can make the temperature of molten silicon 3 drop to minimum.
Fig. 2 has shown the structure of well heater 4.Well heater 4 is to be made by the heat-transfer matcrial of graphite one class, and generally with the form of round buss, in the telescopic upper end tapered portion 4a is arranged.This well heater 4 has alternative upper cut 4b and lower cut 4c, and the extended line of each otch all is parallel to the Z-axis of well heater 4.This structure provides the cylinder sheath body, is furnished with the snakelike circuit that is suitable for use as electrical heating element.In addition, the top dihedral of lower cut 4c is branched into two short otch 4d and 4e, and they are extended to 45 with respect to otch 4c.Electric current adjoins each part that is limited by upper cut 4b and lower cut 4c, and produces heat because of ohm (resistance) loss.
In order to use the monocrystalline production unit of structure as mentioned above, make monocrystalline by in the fused silicon materials along seeded growth, for example, can two crucibles 1 and 2 be rotated in a clockwise direction by axle 8, rod 17 makes the monocrystalline 6 of growth rotate with counter-clockwise direction simultaneously, and perhaps vice versa.Simultaneously, with the transmission rig (not shown) pull bar 17 is little by little promoted, so that from melt, pull out monocrystalline.In addition, two crucibles 1 and 2 also all little by little are raised, and the surface of liquid 3 can be remained on give the fixed position with respect to well heater 4.
Aforesaid device has following advantage: the upper end of well heater 4 is convergents, in addition, form the branch prong of 4d and 4e at the top of lower cut 4c, so the cross-sectional area of tapered portion 4a is less than the other parts of well heater 4.Particularly, very little near the cross-sectional area that divides prong 4d and 4e.Therefore, when electric current passed through well heater 4, the tapered portion 4a of well heater 4 was heated to the temperature all higher than the other parts of well heater 4.As a result, be positioned at the molten face 3a vertically opposite with tapered portion 4a, and the temperature difference between crucible 2 inwalls, and all very little with the melt 3 interior peaked temperature difference.
In addition, because tapered portion 4a compares with traditional form, increased the total electrical resistance of well heater 4, therefore, supposed the electric current that passes to amount, then the temperature of well heater 4 will be than higher.So in this equipment, what the electric current by well heater 4 can be than in the conventional heater of similar design is little.
Such just as already described, in order to accelerate maximum speed of growth Vmax, must increase the thermograde dT/dX of solid phase monocrystalline 6 at a solid liquid interface.So the thermal output that reduces well heater 4 will be best, because monocrystalline heats by well heater 4 radiation.
In according to equipment of the present invention, though reduce the thermal output of well heater 4 in order to strengthen thermograde (dT/dX), but state owing to top, the maximum temperature difference between molten face 3a and melt 3 is very little, thereby can avoid the surface of melt 3 to solidify at crucible 2 inwalls.Consequently can surmount conventional apparatus, the speed of growth be brought up to 0.2 millimeter/minute significantly.In addition, growing single-crystal 6 continuously, thereby increased productive rate and reduced the monocrystalline production cost.
In the most preferred embodiment according to production of the present invention or manufacturing silicon substrate method therefor, adopted aforesaid device.Have been found that crystalline growth velocity in the present invention for lattice defect, especially the generation of stacking fault has very big influence.Therefore, in the present invention, in order to obtain oxygen level greater than 1.8 * 10
18/ centimetre
3Silicon single crystal, the regulation crystalline growth velocity must be higher than 1.2 millimeters/minute.This silicon single crystal is cut into silicon substrate.Selected silicon monocrystal growth speed is higher than traditional method, can prevent that block emanates in thermal treatment subsequently, thereby the while has also been avoided the mass loss of the silicon single-crystal of being grown.So the content that increases oxygen is feasible.Can reach 1.8 * 10 in the present invention
18/ centimetre
3Or be higher than this oxygen level, therefore, can obtain enhanced I.G. effect.
Discuss to adopt the device of Fig. 1 and Fig. 2 below, the silicon substrate finished product of producing according to the best approach of the present invention.
With control of CZ method and growing silicon single crystal body.Single crystal cuts into wafer thus.Mirror polish is carried out on surface to wafer, then, in the atmosphere of dried oxygen, under 1100 ℃ of temperature, stands twice of each two hours thermal treatment.Afterwards, with so-called dry corrosion method with wafer erode to 13 microns dark so that fault exposes.In order to finish this test, the special speed of growth of silicon single crystal in CZ technology that change is to produce various samples.Also make simultaneously the various samples of different oxygen.Measure the concentration of stacking faults of these samples.Fig. 3 illustrates the result of these measurements.
Result shown in Figure 3 shows more than or equal to 1.2 millimeters/timesharing, do not have stacking fault to form in silicon monocrystal growth speed basically.In addition, also further confirmed, during the thermal treatment of silicon wafer or silicon substrate, comprised surface finish, also all do not had stacking fault to produce.
In addition, to measuring because of oxygen content change takes place in 750 ℃ of thermal treatments.Fig. 4 shows these measuring results with the relation curve of oxygen level and heat treatment time.Among the figure, curve 21 to 23 expression, crystalline growth velocity is greater than 1.2 millimeters/timesharing, the relation of oxygen level and heat treatment time.The initial oxygen content of curve 21 to 26 is respectively: 1.644 * 10
18/ centimetre
3, 1.667 * 10
18/ centimetre
3, 1.709 * 10
18/ centimetre
3, 1.866 * 10
18/ centimetre
3, 2.019 * 10
18/ centimetre
3With 1.737 * 10
18/ centimetre
3Though silicon substrate or silicon single crystal are when heat-treating, because oxygen is overflowed, oxygen level finally can descend, but clearly, owing to adopt the present invention, under the very high situation of the initial content of oxygen, or even after more long thermal treatment, change by the represented oxygen levels of curve 24 to 26 little, and, measurable oxygen damage amount only just appears after for a long time.
As from Fig. 3 and Fig. 4 saw, obviously, the result of high speed crystal growth, fault is less.
In the another kind experiment, with the present invention and traditional method, make silicon substrate respectively, on silicon substrate, form n
+-P knot is made diode then, measures the stray current of each diode P-n knot.In this case, form a p type island region on n type silicon substrate, simultaneously, formation has 2.4 * 10
-12Centimetre/centimetre
2The n of area
+The district.Add 5 volts of test voltage in n
+The district measures.The test result of silicon substrate is shown in Fig. 5, and these silicon substrates are to make with the silicon single crystal of CZ method growth, and its crystalline growth velocity is more than or equal to 1.2 millimeters/minute, and oxygen level is 2.0 * 10
18/ centimetre
3On the other hand, Fig. 6 shows by with traditional silicon monocrystal growth method, the result that the silicon substrate that the silicon single-crystal of growing with 0.6～0.9 millimeter/component velocity is made is tested.Among Fig. 5 and Fig. 6, X-coordinate is the stray current of being surveyed, and ordinate zou is the sample number that shows indicated stray current.More as can be known, under the situation of the silicon substrate that adopts the present invention to make, its stray current is dropped to 10 really with Fig. 5 and Fig. 6
-11Ampere or lower.This may be because elevated oxygen level produces the result that tangible I.G. effect causes.
Obviously, according to the best approach of the present invention, can provide the silicon single crystal of an elevated oxygen level.And, adopt following growing method in wide scope, to select oxygen level exactly, this growth method is with the molten silicon of magnetic field application in the quartz crucible, and rotates this crucible as required.An example of the growing method of this applying a magnetic field is illustrated with reference to Fig. 7.
Among the figure, whole device generally indicates with reference number 31.The molten silicon of dress grows crystal by it in the quartz crucible 32.Crucible 32 is around its central shaft, with adjustable rotating speed rotation.Well heater 34 is round crucible 32.Well heater 34 can be the tubular electricradiator 35 that is similar to well heater 4 in the foregoing description.As required, can assemble a cylinder thermally-insulated body in the well heater outside, or a water-cooling jacket 36.In the outside of chuck 36, install a dc magnetic field generator 37 that constitutes by permanent magnet or electro-magnet.The silicon single-crystal seed crystal indicates with reference number 38, and the dop that is pulled then is shown in reference number 39.When seed crystal rotated around the rotating shaft of crucible, the dop 39 that is pulled just upwards lifted silicon single-crystal seed crystal 38.
The electric energy of supplying with well heater 34 can be fluctuation 4% or littler direct current, or 1 kilo hertz or greater than 1 kilo hertz alternating-current, also can be pulsed current.This class electric current has confirmed to be enough to avoid produce unwanted resonance effect between well heater 34 and magnetic field.
Seed of single crystal silicon 38 lifts out from molten silicon face to give the constant speed degree, thus the growth of guiding silicon single-crystal 40.In this case, change the rotating speed of crucible 32, thereby also changed the oxygen level in the finished product crystal 40 especially.Its reason is as follows.The practical viscosity of molten silicon increases because of externally-applied magnetic field in the crucible.Because the rotation of silicon is opposite with the sense of rotation of crucible, therefore between the inwall of molten silicon 3 and crucible 32 friction contact takes place.So the oxygen in crucible 32, the especially inner wall of quartz crucible just is dissolved in the molten silicon 33.Owing to the increase of dissolved oxygen amount along with friction contact increases, that is be, thereby increased the oxygen level in the growing crystal 40 along with crucible increases with respect to the increase of melting silicon 33 rotating speeds.Moreover verified, if the rotating speed of crucible is enough high, then applying a magnetic field can obtain higher crystal oxygen level than the situation of applying a magnetic field not.
As mentioned above, owing to can keep elevated oxygen level, make the present invention that many advantages be arranged.For example, when crystal drew, Temperature Hysteresis Effect can limit basically; Because therefore the oxygen level height when thermal treatment, can obtain high I.G. effect; The crystal fault that can also suppress in addition, substrate surface.Because these advantages, thus the semiconductor element of making on this silicon substrate can obtain the advantage of many uniquenesses, such as, the reduction of stray current, the raising of voltage breakdown, the increase of characteristic uniformity coefficient, the raising of productive rate, or the like.
Though, by most preferred embodiment the present invention has been discussed, must understand that the present invention can implement with the variety of way without prejudice to the principle of the invention for the ease of better understanding the present invention.Therefore, must understand, the present invention includes all possible concrete enforcement, and to the improvement of the devices illustrated that can be equipped with of not violating the principle of stating in the appended claims of the present invention.
Claims (2)
1, a kind of preparation elevated oxygen level method for producing silicon, comprise the Czochralski grown silicon single-crystal, silicon single-crystal section rubbing down and thermal treatment, wherein, step during growth comprises the silicon crucible post-heating of packing into, adopt the well heater of upper end convergent, well heater tapered portion cross-sectional area is less than other parts, thereby make the rest part of the heat of silicon face supply more than molten silicon, also comprise the measure that crucible is rotated, controllable rotation speed system is so that the oxygen level in the adjusting silicon crystal, with about 1.5-2.1 millimeter/minute the growth of high pulling rate, the oxygen level that makes silicon substrate is more than or equal to 1.8 * 10
18 Individual/ centimetre
3
2, a kind of equipment as the raw-material silicon single-crystal of silicon substrate of semiconducter device of the elevated oxygen level that is used for growing comprises:
The crucible that dress silicon is used,
A well heater, in order to heat this silicon, make this silicon keep being fluidised form, the heat that this heater fed is enough, to prevent that this molten silicon face from solidifying, there is a tapered portion well heater upper end, and the cross-sectional area of this tapered portion is less than the cross-sectional area of other parts, this heater fed should melt the heat of silicon face, than many to the heat of these molten silicon other parts; And
The device that is pulled is used for this silicon single-crystal that is pulled in the molten silicon of quite high speed by this crucible, in order that prevent to prepare afterwards during the thermal treatment of above-mentioned semiconductor device technology, the oxygen level in the silicon substrate reduces,
Wherein the described pulling rate of this silicon single-crystal is 1.5 millimeters/minute to 2.1 millimeters/minute; The described oxygen level of silicon substrate is more than or equal to 1.8 * 10
18Individual/centimetre
3;
Wherein the drive unit of this crucible can make this crucible rotate with variable velocity, so that can regulate the described oxygen level in this silicon substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP244562/85 | 1985-10-31 | ||
| JP60244562A JPS62105998A (en) | 1985-10-31 | 1985-10-31 | Production of silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86106346A CN86106346A (en) | 1987-06-17 |
| CN1016191B true CN1016191B (en) | 1992-04-08 |
Family
ID=17120560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86106346A Expired CN1016191B (en) | 1985-10-31 | 1986-10-31 | Production of high-oxygen-content silicon monocrystal substrate for semiconductor devices |
Country Status (14)
| Country | Link |
|---|---|
| JP (1) | JPS62105998A (en) |
| KR (1) | KR870004498A (en) |
| CN (1) | CN1016191B (en) |
| AT (1) | ATA289086A (en) |
| AU (1) | AU597599B2 (en) |
| CA (1) | CA1336061C (en) |
| DE (1) | DE3637006A1 (en) |
| DK (1) | DK518486A (en) |
| FR (1) | FR2589489B1 (en) |
| GB (1) | GB2182262B (en) |
| IT (1) | IT1198454B (en) |
| MY (1) | MY100449A (en) |
| NL (1) | NL8602738A (en) |
| SE (1) | SE8604627L (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
| JP2613498B2 (en) * | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Heat treatment method for Si single crystal wafer |
| JPH07247197A (en) * | 1994-03-09 | 1995-09-26 | Fujitsu Ltd | Semiconductor device and its production |
| JP3443822B2 (en) * | 1996-03-27 | 2003-09-08 | 信越半導体株式会社 | Method for producing silicon single crystal |
| DE19711922A1 (en) * | 1997-03-21 | 1998-09-24 | Wacker Siltronic Halbleitermat | Device and method for pulling a single crystal |
| US6379642B1 (en) | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
| SG165151A1 (en) | 1997-04-09 | 2010-10-28 | Memc Electronic Materials | Low defect density silicon |
| WO1998045507A1 (en) | 1997-04-09 | 1998-10-15 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| JPH11268987A (en) * | 1998-03-20 | 1999-10-05 | Shin Etsu Handotai Co Ltd | Silicon single crystal and its production |
| WO2000000674A2 (en) | 1998-06-26 | 2000-01-06 | Memc Electronic Materials, Inc. | Process for growth of defect free silicon crystals of arbitrarily large diameters |
| WO2000013211A2 (en) | 1998-09-02 | 2000-03-09 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
| US6416836B1 (en) | 1998-10-14 | 2002-07-09 | Memc Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
| DE69913731T2 (en) | 1998-10-14 | 2004-10-14 | Memc Electronic Materials, Inc. | ESSENTIAL DEFECT-FREE EPITACTIC SILICONE WINDOWS |
| US7105050B2 (en) | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
| EP1356139B1 (en) | 2001-01-26 | 2006-08-09 | MEMC Electronic Materials, Inc. | Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| DE10103691A1 (en) * | 2001-01-26 | 2002-08-08 | Crystal Growing Systems Gmbh | Electrical energy supply used for an electrical heater for heating a crucible during crystal growing contains a twelve-pulse rectifier |
| EP2027312B1 (en) | 2006-05-19 | 2015-02-18 | MEMC Electronic Materials, Inc. | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
| JP5974978B2 (en) * | 2013-05-29 | 2016-08-23 | 信越半導体株式会社 | Silicon single crystal manufacturing method |
| CN105780113B (en) * | 2016-03-10 | 2017-11-28 | 江西赛维Ldk太阳能高科技有限公司 | A kind of method for characterizing crystalline silicon growth interface and the speed of growth |
| CN112095154B (en) * | 2019-06-18 | 2021-05-14 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5556098A (en) * | 1978-10-17 | 1980-04-24 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for producing si single crystal rod |
| EP0042901B1 (en) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Process for controlling the oxygen content of silicon ingots pulled by the czochralski method |
| GB2084046B (en) * | 1980-08-27 | 1984-07-25 | Secr Defence | Method and apparatus for crystal growth |
| CA1191075A (en) * | 1980-12-29 | 1985-07-30 | Roger A. Frederick | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
| NL8102102A (en) * | 1981-04-29 | 1982-11-16 | Philips Nv | METHOD FOR DRAWING UP A SILICON BAR AND SEMICONDUCTOR DEVICE MADE FROM THE SILICON BAR. |
| JPH0244799B2 (en) * | 1981-10-26 | 1990-10-05 | Sony Corp | KETSUSHOSEICHOHOHO |
| US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
| JPS6027684A (en) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | Apparatus for producing single crystal |
| JPS6033289A (en) * | 1983-07-29 | 1985-02-20 | Toshiba Corp | Preparation of single crystal of silicon |
| JPS6094722A (en) * | 1983-08-16 | 1985-05-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Silicon wafer |
| JPS6153187A (en) * | 1984-08-24 | 1986-03-17 | Sony Corp | Device for growing single crystal |
| IT1207497B (en) * | 1985-05-29 | 1989-05-25 | Montedison Spa | MONO CRYSTALS OF GALLIO ARSENIURO WITH LOW DENSITY OF DISLOCATIONS AND HIGH PURITY. |
-
1985
- 1985-10-31 JP JP60244562A patent/JPS62105998A/en active Pending
-
1986
- 1986-08-25 KR KR1019860007019A patent/KR870004498A/en not_active Application Discontinuation
- 1986-10-16 CA CA000520610A patent/CA1336061C/en not_active Expired - Fee Related
- 1986-10-28 IT IT48592/86A patent/IT1198454B/en active
- 1986-10-29 FR FR868615075A patent/FR2589489B1/en not_active Expired - Fee Related
- 1986-10-30 AU AU64550/86A patent/AU597599B2/en not_active Ceased
- 1986-10-30 NL NL8602738A patent/NL8602738A/en not_active Application Discontinuation
- 1986-10-30 DE DE19863637006 patent/DE3637006A1/en not_active Ceased
- 1986-10-30 DK DK518486A patent/DK518486A/en not_active Application Discontinuation
- 1986-10-30 AT AT0289086A patent/ATA289086A/en not_active Application Discontinuation
- 1986-10-30 SE SE8604627A patent/SE8604627L/en not_active Application Discontinuation
- 1986-10-31 GB GB8626074A patent/GB2182262B/en not_active Expired
- 1986-10-31 MY MYPI86000057A patent/MY100449A/en unknown
- 1986-10-31 CN CN86106346A patent/CN1016191B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| MY100449A (en) | 1990-10-15 |
| AU6455086A (en) | 1987-05-07 |
| GB2182262A (en) | 1987-05-13 |
| AU597599B2 (en) | 1990-06-07 |
| DK518486D0 (en) | 1986-10-30 |
| GB8626074D0 (en) | 1986-12-03 |
| DK518486A (en) | 1987-05-01 |
| SE8604627D0 (en) | 1986-10-30 |
| FR2589489A1 (en) | 1987-05-07 |
| FR2589489B1 (en) | 1994-06-10 |
| SE8604627L (en) | 1987-05-01 |
| IT8648592A0 (en) | 1986-10-28 |
| ATA289086A (en) | 1996-01-15 |
| NL8602738A (en) | 1987-05-18 |
| CN86106346A (en) | 1987-06-17 |
| IT1198454B (en) | 1988-12-21 |
| CA1336061C (en) | 1995-06-27 |
| JPS62105998A (en) | 1987-05-16 |
| GB2182262B (en) | 1989-09-27 |
| KR870004498A (en) | 1987-05-09 |
| DE3637006A1 (en) | 1987-05-07 |
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