CN101566788A - Method for repairing photoresist pattern - Google Patents
Method for repairing photoresist pattern Download PDFInfo
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- CN101566788A CN101566788A CNA2008100903008A CN200810090300A CN101566788A CN 101566788 A CN101566788 A CN 101566788A CN A2008100903008 A CNA2008100903008 A CN A2008100903008A CN 200810090300 A CN200810090300 A CN 200810090300A CN 101566788 A CN101566788 A CN 101566788A
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- photoresist
- photoresist pattern
- repairing
- layer
- mending
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 191
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
本发明公开了一种光刻胶图案的修补方法，至少包括：形成一材料层于一衬底上；形成一光刻胶图案于该材料层的表面的一第一部分上，其中该光刻胶图案至少包括一缺陷区暴露出该材料层的该表面的一第二部分；以及进行一修补步骤，以形成一光刻胶层设置在该光刻胶图案的该缺陷区中，并覆盖该材料层的该表面的该第二部分。
The present invention discloses a method for repairing a photoresist pattern, which at least comprises: forming a material layer on a substrate; forming a photoresist pattern on a first portion of the surface of the material layer, wherein the photoresist pattern at least comprises a defective area exposing a second portion of the surface of the material layer; and performing a repairing step to form a photoresist layer disposed in the defective area of the photoresist pattern and covering the second portion of the surface of the material layer.
Description
Technical field
The present invention relates to a kind of method for repairing and mending of photoresist pattern, and be particularly related to a kind of method for repairing and mending of the photoresist pattern that can carry out in real time.
Background technology
At present, organize in the manufacturing process of substrate more, behind the common first deposition materials film, utilize technologies such as photoetching, etching to make many block graphicses again at the thin film transistor (TFT) of LCD.In photoetching process, the coating photoresist layer is on material film earlier, by photomask photoresist layer is carried out step of exposure so that photomask pattern is transferred to photoresist layer again, then developing is transferred to photoresist layer with the photoresist layer that removes part with photomask pattern, more remaining photoresist layer is toasted and finishes the making of photoresist pattern.
After finishing photoetching process, all can utilize pick-up unit to check whether defectiveness of photoresist pattern, be will carry out follow-up etch process or reset the photoresist pattern with decision.When detecting photoresist pattern defectiveness, the position and the quantity of pick-up unit meeting recording defect.When if the result who detects is lower than predetermined manufacturing specification for the position at these defective places or quantity, can continue to carry out the etching of material film as mask with the photoresist pattern, carve glue to deluster again and peel off remaining photoresist, and finish the definition of many block graphicses of material film.Because when the photoresist pattern has disconnection defect,, formed metallic circuit is presented open circuit, so after many block graphicses are finished, need to repair if material film is when making metallic circuit.The repairing method that the thin film transistor (TFT) of present stage is organized substrate more is a metallic circuit of making broken string in broken string modes such as the other weld metal lead in zone in addition up.
On the other hand, when if the result who detects is higher than predetermined manufacturing specification for the position at these defective places or quantity, the program of then doing over again, carve glue formed photoresist pattern is divested and utilize to deluster, and then carry out the production process of the photoresist patterns such as coating, exposure, development and baking of photoresist layer again.
Yet, after the etching of finishing line construction, weld the repairing method of extra metallic circuit again, generally need to use expensive instrument and equipment, also need some consumables associated therewiths, therefore can improve production cost widely.In addition, such repairing method also can expend considerable time, causes production efficiency not high.
Summary of the invention
Therefore, technical matters to be solved by this invention is to provide a kind of method for repairing and mending of photoresist pattern, it can be after the patterning of photoresist be finished, in real time defective photoresist pattern is repaired, so can exempt after utilizing the photoresist pattern to carry out the etching of line construction, need the program of carrying out the repairing of line construction in the mode of weld metal circuit in addition.Therefore, the required pertinent instruments and the use of consumptive material in the time of can saving the weld metal circuit with the program of repairing, and can significantly reduce the technology cost, also can significantly shorten the repairing time, and effectively enhance productivity.
According to above-mentioned purpose of the present invention, a kind of method for repairing and mending of photoresist pattern is proposed, comprise at least: form a material layer on a substrate; Form a photoresist pattern in the first on the surface of material layer, wherein the photoresist pattern comprises that at least a defect area exposes the second portion on the surface of previous materials layer; And carry out one and repair step, forming in the defect area that a photoresist layer is arranged on the photoresist pattern, and cover the second portion on the surface of previous materials layer.
According to a preferred embodiment of the present invention, the above-mentioned photoresist pattern and the material of photoresist layer are the eurymeric photoresist.
According to another preferred embodiment of the present invention, above-mentioned photoresist pattern and photoresist layer are made up of same material.
According to another preferred embodiment of the present invention, above-mentioned repairing step comprises at least to be inserted a photoresist liquid in the defect area.In addition, after the step of photoresist liquid being inserted in the defect area, aforesaid repairing step also comprises at least utilizes laser to modify the photoresist pattern, to remove the redundance of the outer photoresist liquid of photoresist pattern.
Description of drawings
Figure 1A to Fig. 5 B illustrates the artwork according to the method for repairing and mending of a kind of photoresist pattern of a preferred embodiment of the present invention, wherein Figure 1A, Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A are vertical view, and Figure 1B, Fig. 2 B are respectively the sectional view of Figure 1A, Fig. 2 A, and Fig. 3 B, Fig. 4 B and Fig. 5 B are respectively the sectional view that is obtained along the AA profile line of Fig. 3 A, Fig. 4 A and Fig. 5 A.
Fig. 6 A illustrates according to a kind of material layer of a preferred embodiment of the present invention the vertical view after patterned; And
Fig. 6 B illustrates according to a kind of material layer of a preferred embodiment of the present invention the sectional view after patterned.
[main devices symbol description]
100: substrate 102: material layer
104: surface 106: photoresist layer
108: photoresist pattern 110: defect area
112: defect area 114: photoresist liquid
116: photoresist layer 118: device architecture
Embodiment
The present invention discloses a kind of method for repairing and mending of photoresist pattern.In order to make narration of the present invention more detailed and complete, can be with reference to following description and Figure 1A to Fig. 6 B in conjunction with the accompanying drawings.
Please refer to Figure 1A to Fig. 5 B, it illustrates the artwork according to the method for repairing and mending of a kind of photoresist pattern of a preferred embodiment of the present invention, wherein Figure 1A, Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A are vertical view, and Figure 1B, Fig. 2 B, Fig. 3 B, Fig. 4 B and Fig. 5 B are respectively the sectional view of Figure 1A, Fig. 2 A, Fig. 3 A, Fig. 4 A and Fig. 5 A.In an example embodiment, when carrying out the repair technology of photoresist pattern, provide substrate 100 earlier, wherein this substrate 100 is preferable has a flat surfaces for the device architecture setting thereon.Substrate 100 can be Semiconductor substrate common in the general semiconductor technology, and for example silicon and SiGe etc. perhaps are glass substrate common in the LCD technology.Then, for example utilize deposition or coating method to form material layer 102 and cover on the substrate 100, shown in the sectional view of the vertical view of Figure 1A and Figure 1B.Wherein, aforesaid depositional mode can for example be general common chemical vapor deposition (CVD) or physical vapor deposition (PVD) method.Material layer 102 can be dielectric layer or is that wherein conductor layer can for example be a metal level in order to the conductor layer of the electrical structure of making device.
Next, can utilize coating method, rotary coating (Spin-on Coating) mode for example forms photoresist layer 106 and covers on the surface 104 of material layer 102, shown in the sectional view of the vertical view of Fig. 2 A and Fig. 2 B.In one embodiment, photoresist layer 106 can be made up of the eurymeric photoresist.In another embodiment, photoresist layer 106 can be made up of negative photoresist.In this example embodiment, the material of photoresist layer 106 adopts the eurymeric photoresist.
Then, photoresist layer 106 is carried out Patternized technique.In an example embodiment, the Patternized technique of photoresist layer 106 can for example comprise and earlier by the photomask (not shown) photoresist layer 106 is carried out step of exposure, will be preset in pattern transfer on the photomask to photoresist layer 106.Then, utilize developer solution that the photoresist layer 106 after exposing is carried out development step.Because the material of photoresist layer 106 is the eurymeric photoresist in example embodiment, therefore the photoresist layer 106 after the exposure is after this development step, the part that photoresist layer 106 is not exposed can be removed, and expose the part on the surface 104 of material layer 102, and on the another part on the surface 104 of material layer 102, stay and be subjected to photomask and cover and the part of unexposed photoresist layer 106, so that the predetermined pattern on the photomask is transferred in the photoresist layer 106, and form photoresist pattern 108, shown in the sectional view of the vertical view of Fig. 3 A and Fig. 3 B.Then, formed photoresist pattern 108 is carried out baking processing, to remove the solvent that remains in the photoresist pattern 108.In the present embodiment, photoresist pattern 108 can be the part of many picture groups of thin film transistor (TFT) case of LCD.
Yet, finish the Patternized technique of photoresist layer 106 after, formed photoresist pattern 108 may have defect area, the defect area 110 and 112 shown in Fig. 3 A and Fig. 3 B.Wherein, defect area 110 should leave photoresist but zone that photoresist is removed by accident for former, makes photoresist pattern 108 produce gaps and omissions and imperfect, and exposes the part on surface 104 of the material layer 102 of below.On the other hand, 112 of defect areas have and formerly should remove but have part photoresist accident to stay, and make photoresist pattern 108 have redundance.Defect area 110 and 112 all can make the photoresist pattern 108 that shifts the predetermined pattern on photomask produce transfer distortions.Therefore; at present after finishing the Patternized technique of photoresist; for avoiding causing the subsequent pattern distortion of the material layer 102 of below because of the distortion of light transfer pattern; so after the baking processing of the Patternized technique of photoresist layer 106 and the formed photoresist pattern 108 of patterning; usually can utilize checkout equipment that photoresist pattern 108 is detected step; detecting all defect district 110 and 112 in the patterned formed photoresist pattern 108, and all defect district 110 in the record photoresist pattern 108 and 112 sample attitude, quantity and defective position.In the present invention, when if the result who detects is lower than predetermined manufacturing specification for the position at these defect areas 110 and 112 places or quantity, can repair step to the defect area of this photoresist pattern 108, then continue to carry out as mask the patterning of the material layer 102 of below again with the photoresist pattern after repairing.But; when if the result who detects is higher than predetermined manufacturing specification for the position at these defect areas 110 and 112 places or quantity; since the program of repairing too consuming time with take a lot of work; so the program that can do over again usually; carve glue formed photoresist pattern is divested and utilize to deluster, and then carry out the production process of the photoresist patterns such as coating, exposure, development and baking of photoresist layer again.
In certain embodiments, be after the detection step of the Patternized technique of photoresist layer 106 and photoresist pattern 108, photoresist pattern 108 is repaired step.Defect area 110 for pattern gaps and omissions in the photoresist pattern 108, repairing step is that photoresist liquid 114 is inserted in the defect area 110 that gaps and omissions is arranged in the photoresist pattern 108, and cover on the surface 104 of the material layer 102 that defect area 110 exposed, wherein this photoresist liquid 114 can be after toasting and form photoresist layer, can repair the defect area 110 of photoresist pattern 108 thus, shown in the sectional view of the vertical view of Fig. 4 A and Fig. 4 B.The step that photoresist liquid 114 is inserted defect area 110 can utilize ink-jet method, fine pin to attach method, fine needle water conservancy diversion method, micro-capillary injection or the liquid precise method that quantitatively spues.Be preferably by same type photoresist with photoresist liquid 114 in order to the photoresist layer 106 of making photoresist pattern 108 and constituted, for example be all the eurymeric photoresist or be all negative photoresist.In one embodiment, photoresist liquid 114 can adopt identical photoresist material with the photoresist layer 106 of making photoresist pattern 108, for example with a kind of eurymeric photoresist material or with a kind of negative photoresist material.In another embodiment, photoresist liquid 114 can adopt different photoresist materials with the photoresist layer 106 of making photoresist pattern 108, for example is all the eurymeric photoresist but photoresist material difference or be all negative photoresist but the photoresist material difference that adopted.
When photoresist liquid 114 is in fact only filled out in the gamut of the defect area 110 that is located at photoresist pattern 108, can only utilize laser for example to remove the redundance of the defect area 112 of photoresist pattern 108, and need not photoresist liquid 114 is repaired, can effectively modify photoresist pattern 108.Then, can be according to the setting condition of photoresist liquid 114, optionally photoresist liquid 114 is carried out the baking program and solidify photoresist liquid 114, and can form on surface 104 parts that photoresist layer 116 covers originally the material layer 102 that is exposed by defect area 110, and then finish the repairing of photoresist pattern 108.On the other hand, when photoresist liquid 114 shown in Fig. 4 A like that, when being the scope greater than the defect area 110 of photoresist pattern 108 gaps and omissions, for example can utilize that laser removes unnecessary photoresist liquid 114, to modify by photoresist pattern 108.In addition, can utilize laser for example to remove the unnecessary photoresist of the defect area 112 of photoresist pattern 108 equally, to modify photoresist pattern 108.After waiting to finish laser modification program, equally can be according to the setting condition of photoresist liquid 114, optionally remaining photoresist liquid 114 is carried out the baking program and solidify photoresist liquid 114, can form on surface 104 parts that photoresist layer 116 covers originally the material layer 102 that is exposed by defect area 110, and finish the repairing of the defect area 110 of photoresist pattern 108, and then finish the repairing and the making of photoresist pattern 108, shown in the sectional view of the vertical view of Fig. 5 A and Fig. 5 B.
After finishing the repair technology of photoresist pattern 108, can utilize photoresist pattern 108 as mask, be not subjected to the material layer 102 that photoresist pattern 108 covers and for example utilize etching mode to remove, thus photoresist pattern 108 further is transferred in the material layer 102 of below, forms device architecture 118 with patterned material layer 102.Then, remaining photoresist pattern 108 can be peeled off, and expose the device architecture 118 of below, finish the patterning program of material layer 102, shown in the sectional view of the vertical view of Fig. 6 A and Fig. 6 B.
By the example embodiment of the invention described above as can be known, advantage of the present invention is exactly because the method for repairing and mending of photoresist pattern of the present invention can be after the patterning of photoresist be finished, in real time defective photoresist pattern is repaired, so can exempt after utilizing the photoresist pattern to carry out the etching of line construction, need the program of carrying out the repairing of line construction in the mode of weld metal circuit in addition.Therefore, the required pertinent instruments and the use of consumptive material in the time of can saving the weld metal circuit with the program of repairing, and can significantly reduce the technology cost, also can significantly shorten the repairing time, and effectively enhance productivity.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can doing various changes and distortion, so protection scope of the present invention is when looking being as the criterion that the accompanying Claim book defined.
Claims (10)
1, a kind of method for repairing and mending of photoresist pattern is characterized in that, comprises at least:
Form a material layer on a substrate;
Form a photoresist pattern in a first on the surface of this material layer, wherein this photoresist pattern comprises that at least a defect area exposes a second portion on this surface of this material layer; And
Carry out one and repair step, forming in this defect area that a photoresist layer is arranged on this photoresist pattern, and cover this second portion on this surface of this material layer.
2, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, the material of this photoresist pattern and this photoresist layer is the eurymeric photoresist.
3, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, the material of this photoresist pattern and this photoresist layer is negative photoresist.
4, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, this photoresist pattern and this photoresist layer are made up of same material.
5, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, this photoresist pattern and this photoresist layer are made up of different materials.
6, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, the step that forms this photoresist pattern comprises at least:
Being coated with another photoresist layer is covered on this surface of this material layer;
This another photoresist layer is carried out a patterning step, to form this photoresist pattern; And
Carry out a baking procedure.
7, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, forms the step of this photoresist pattern and carries out between this repairing step, comprises at least that also this photoresist pattern is carried out one detects step, and detects this defect area.
8, the method for repairing and mending of photoresist pattern according to claim 1 is characterized in that, this repairing step comprises at least to be inserted a photoresist liquid in this defect area.
9, the method for repairing and mending of photoresist pattern according to claim 8, it is characterized in that, this photoresist liquid is inserted step in this defect area utilize ink-jet method, fine pin to attach method, fine needle water conservancy diversion method, micro-capillary injection or the liquid precise method that quantitatively spues.
10, the method for repairing and mending of photoresist pattern according to claim 8 is characterized in that, after the step of this photoresist liquid being inserted in this defect area, this repairing step also comprises at least:
Utilize laser to modify this photoresist pattern, to remove the redundance of this outer photoresist liquid of this photoresist pattern; And
Carry out a baking procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100903008A CN101566788A (en) | 2008-04-21 | 2008-04-21 | Method for repairing photoresist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100903008A CN101566788A (en) | 2008-04-21 | 2008-04-21 | Method for repairing photoresist pattern |
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| Publication Number | Publication Date |
|---|---|
| CN101566788A true CN101566788A (en) | 2009-10-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008100903008A Pending CN101566788A (en) | 2008-04-21 | 2008-04-21 | Method for repairing photoresist pattern |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102486607A (en) * | 2010-12-02 | 2012-06-06 | 洋华光电股份有限公司 | Method for manufacturing panel decorative frame film pattern layer |
| CN102566256A (en) * | 2010-12-27 | 2012-07-11 | 京东方科技集团股份有限公司 | Device and method for repairing mask plate |
| CN103048815A (en) * | 2013-01-15 | 2013-04-17 | 深圳市华星光电技术有限公司 | Array substrate repairing device and method |
| CN103207520A (en) * | 2012-12-24 | 2013-07-17 | 西南技术物理研究所 | Preparation technology of polyimide passive film |
| WO2014032312A1 (en) * | 2012-08-31 | 2014-03-06 | 深圳市华星光电技术有限公司 | Pattern repairing device and method for array substrate |
| CN105182684A (en) * | 2015-10-20 | 2015-12-23 | 京东方科技集团股份有限公司 | Overhauling method of mask plate |
| CN106773522A (en) * | 2017-01-06 | 2017-05-31 | 无锡中微掩模电子有限公司 | A kind of integrated circuit phase shift photo mask manufacturing method |
| CN109753183A (en) * | 2019-01-02 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of restorative procedure and touch-control display panel of transparent electrode pattern |
| CN112965336A (en) * | 2020-10-14 | 2021-06-15 | 深圳市路维光电股份有限公司 | Method and device for repairing mask defect |
-
2008
- 2008-04-21 CN CNA2008100903008A patent/CN101566788A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102486607A (en) * | 2010-12-02 | 2012-06-06 | 洋华光电股份有限公司 | Method for manufacturing panel decorative frame film pattern layer |
| CN102566256A (en) * | 2010-12-27 | 2012-07-11 | 京东方科技集团股份有限公司 | Device and method for repairing mask plate |
| WO2014032312A1 (en) * | 2012-08-31 | 2014-03-06 | 深圳市华星光电技术有限公司 | Pattern repairing device and method for array substrate |
| US20150209812A1 (en) * | 2012-08-31 | 2015-07-30 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Device and method for repairing pattern on array substrate |
| CN103207520A (en) * | 2012-12-24 | 2013-07-17 | 西南技术物理研究所 | Preparation technology of polyimide passive film |
| CN103048815A (en) * | 2013-01-15 | 2013-04-17 | 深圳市华星光电技术有限公司 | Array substrate repairing device and method |
| WO2014110854A1 (en) * | 2013-01-15 | 2014-07-24 | 深圳市华星光电技术有限公司 | Device and method for repairing array substrate |
| CN103048815B (en) * | 2013-01-15 | 2015-09-09 | 深圳市华星光电技术有限公司 | Array base palte prosthetic device and method |
| CN105182684A (en) * | 2015-10-20 | 2015-12-23 | 京东方科技集团股份有限公司 | Overhauling method of mask plate |
| CN106773522A (en) * | 2017-01-06 | 2017-05-31 | 无锡中微掩模电子有限公司 | A kind of integrated circuit phase shift photo mask manufacturing method |
| CN109753183A (en) * | 2019-01-02 | 2019-05-14 | 京东方科技集团股份有限公司 | A kind of restorative procedure and touch-control display panel of transparent electrode pattern |
| CN112965336A (en) * | 2020-10-14 | 2021-06-15 | 深圳市路维光电股份有限公司 | Method and device for repairing mask defect |
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Open date: 20091028 |