CN101527327B - 太阳能电池 - Google Patents
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- CN101527327B CN101527327B CN200810065797A CN200810065797A CN101527327B CN 101527327 B CN101527327 B CN 101527327B CN 200810065797 A CN200810065797 A CN 200810065797A CN 200810065797 A CN200810065797 A CN 200810065797A CN 101527327 B CN101527327 B CN 101527327B
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Abstract
本发明涉及一种太阳能电池,该太阳能电池包括一背电极、一硅片衬底、一掺杂硅层和一上电极。所述背电极设置于所述硅片衬底的下表面,且与该硅片衬底表面欧姆接触。所述硅片衬底的上表面形成有多个间隔设置的凹孔。所述掺杂硅层形成于所述凹孔的内表面。所述上电极设置于所述硅片衬底的上表面。该上电极包括一碳纳米管结构。
Description
技术领域
本发明涉及一种太阳能电池,尤其涉及一种基于碳纳米管的太阳能电池。
背景技术
太阳能是当今最清洁的能源之一,取之不尽、用之不竭。太阳能的利用方式包括光能-热能转换、光能-电能转换和光能-化学能转换。太阳能电池是光能-电能转换的典型例子,是利用半导体材料的光生伏特原理制成的。根据半导体光电转换材料种类不同,太阳能电池可以分为硅基太阳能电池(请参见太阳能电池及多晶硅的生产,材料与冶金学报,张明杰等,vol6,p33-38(2007))、砷化镓太阳能电池、有机薄膜太阳能电池等。
目前,太阳能电池以硅基太阳能电池为主。请参阅图1,为现有技术中的硅基太阳能电池30包含一背电极32、一硅片衬底34、一掺杂硅层36和一上电极38。在硅基太阳能电池中,作为光电转换的材料的硅片衬底通常采用单晶硅制成。因此,要获得高转换效率的硅基太阳能电池,就需要制备出高纯度的单晶硅。所述背电极32设置于所述硅片衬底34的下表面341,且与该硅片衬底34的下表面341欧姆接触。所述硅片衬底34的上表面343形成有多个间隔设置的凹孔342。所述掺杂硅层36形成于所述凹孔342的内表面344,作为光电转换的材料。所述上电极38设置于所述硅片衬底34的上表面343。为了增加太阳光的透过率,一般采用导电金属网格作为上电极38。而导电金属都是不透明的材料。为了进一步提高太阳能电池的光电转换效率,故采用透明的铟锡氧化物层作为上电极38,但由于铟锡氧化物层的机械和化学耐用性不够好及铟锡氧化物层作上电极38存在电阻阻值分布不均匀等缺点,导致了现有的太阳能电池的耐用性低,光电转换效率性能不高。
因此,确有必要提供一种太阳能电池,所得到的太阳能电池具有较高的光电转换效率、耐用性高、成本低、阻值分布均匀及透光性好。
发明内容
一种太阳能电池包括一背电极、一硅片衬底、一掺杂硅层和一上电极。所述背电极设置于所述硅片衬底的下表面,且与该硅片衬底表面欧姆接触。所述硅片衬底的上表面形成有多个间隔设置的凹孔。所述掺杂硅层形成于所述凹孔的内表面。所述上电极设置于所述硅片衬底的上表面。该上电极包括一碳纳米管结构。
与现有技术相比较,所述太阳能电池具有以下优点:其一,碳纳米管结构具有良好的吸收太阳光能力,所得到的太阳能电池具有较高的光电转换效率;其二,碳纳米管结构具有很好的韧性和机械强度,故,采用碳纳米管结构作上电极,可以相应的提高太阳能电池的耐用性;其三,由于碳纳米管结构是采用从碳纳米管阵列中直接拉取获得而制成,易于操作,故所制得的太阳能电池成本低;其四,由于碳纳米管结构具有较均匀的结构,故,采用碳纳米管结构作上电极,可使得上电极具有均匀的电阻,从而提高太阳能电池的性能;其五,碳纳米管结构中相邻的碳纳米管之间具有均匀分布的空隙,故,采用碳纳米管结构作上电极,可使得上电极对太阳光具有很好的透光性。
附图说明
图1是现有技术中太阳能电池的结构示意图。
图2是本技术方案实施例的太阳能电池的侧视结构示意图。
图3是是图2中的部分有序碳纳米管层III的放大示意图。
图4是本技术方案实施例的太阳能电池的俯视结构示意图。
具体实施方式
以下将结合附图详细说明本技术方案太阳能电池。
请参阅图2及图4,本技术方案实施例提供一种太阳能电池10包括一背电极12、一硅片衬底14、一掺杂硅层16和一上电极18。所述背电极12设置于所述硅片衬底14的下表面141,且与其表面欧姆接触。所述硅片衬底14的上表面143形成有多个间隔设置的凹孔142。所述掺杂硅层16形成于所述凹孔142的内表面144。所述上电极18设置于所述硅片衬底14的上表面143。该上电极18包括一碳纳米管结构。
所述太阳能电池10进一步包括多个金属层20,该多个金属层20的材料为铝或者银。所述多个金属层20分别设置于所述硅片衬底14的上表面143且与所述上电极18之间形成多个异质结,用以提高所述上电极18与硅片衬底14的电连接,进而提高所述太阳能电池10的光电转换效率。
所述太阳能电池10进一步包括一第一电极22和一第二电极24,该第一电极22和第二电极24的材料为银或者金等。所述第一电极22和第二电极24间隔设置于所述上电极18的上表面181,并与上电极18的上表面181电接触。所述第一电极22和第二电极24用以收集流过所述上电极18中的电流。
所述太阳能电池10进一步包括一减反层26,该减反层26的材料为二氧化钛或者氧化锌铝等。所述减反层26设置于所述上电极18的上表面181或者下表面182,用以减少所述上电极18对太阳光的反射,从而进一步提高所述太阳能电池10的光电转换效率。
所述背电极12的材料可为铝、镁或者银等金属。所述背电极12的厚度为10微米~300微米。
所述硅片衬底14为P型单晶硅片。该P型单晶硅片的厚度为200微米~300微米。所述多个凹孔142的间距离为10微米~30微米,深度为50微米~70微米。所述多个凹孔142的形状和大小不限,该凹孔142的横截面可以为正方形、梯形或者三角形等多边形。所述掺杂硅层16的材料为N型掺杂硅层,是通过向所述硅片衬底14注入过量的如磷或者砷等N型掺杂材料而形成的。所述N型掺杂硅层16的厚度为500纳米~1微米。所述N型掺杂材料与所述P型硅片衬底14形成多个P-N结结构,从而实现所述太阳能电池中光能到电能的转换。所述凹孔142的结构使所述硅片衬底14的上表面143具有良好的陷光机制和较大的P-N结的界面面积,可以提高所述太阳能电池的光电转换效率。
所述上电极18具有一定的空隙、良好的吸收太阳光能力、很好的韧性和机械强度以及均匀分布的结构,以使所述太阳能电池100具有良好的透光性、较高的光电转换效率、很好的耐用性以及均匀的电阻,从而提高所述太阳能电池100的性能。所述上电极18包括一碳纳米管结构,用以收集所述P-N结中通过光能向电能转换而产生的电流。该碳纳米管结构包括无序碳纳米管层或者有序碳纳米管层。
所述无序碳纳米管层包括多个无序排列的碳纳米管。该碳纳米管在无序碳纳米管层中相互缠绕或者各向同性。
所述有序碳纳米管层包括多个有序排列的碳纳米管,该碳纳米管沿固定方向择优取向排列。所述的多个碳纳米管在该有序碳纳米管层中平行于所述有序碳纳米管层的表面排列,且沿同一方向或者沿多个方向择优取向排列。
所述碳纳米管结构中的碳纳米管为单壁碳纳米管、双壁碳纳米管或者多壁碳纳米管。当所述碳纳米管结构中的碳纳米管为单壁碳纳米管时,该单壁碳纳米管的直径为0.5纳米~50纳米。当所述碳纳米管结构中的碳纳米管为双壁碳纳米管时,该双壁碳纳米管的直径为1.0纳米~50纳米。当所述碳纳米管结构中的碳纳米管为多壁碳纳米管时,该多壁碳纳米管的直径为1.5纳米~50纳米。由于所述碳纳米管结构中的碳纳米管非常纯净,且由于碳纳米管本身的比表面积非常大,所以该碳纳米管结构本身具有较强的粘性。该碳纳米管结构可利用其本身的粘性直接固定于所述多个凹孔142的表面。
本实施例的上电极18优选采用至少一有序碳纳米管薄膜180。请参阅图3,该有序碳纳米管薄膜180通过直接拉伸一碳纳米管阵列获得。该有序碳纳米管薄膜180包括沿同一方向定向排列的碳纳米管。具体地,所述有序碳纳米管薄膜180包括多个首尾相连且长度相等的碳纳米管束183。所述碳纳米管束183的两端通过范德华力相互连接。每个碳纳米管束183包括多个长度相等且平行排列的碳纳米管184。所述相邻的碳纳米管184之间通过范德华力紧密结合。所述有序碳纳米管薄膜180是由碳纳米管阵列经进一步处理得到的,故其长度与宽度和碳纳米管阵列所生长的基底的尺寸有关。可根据实际需求制得。本实施例中,采用气相沉积法在4英寸的基底生长超顺排碳纳米管阵列。所述有序碳纳米管薄膜180的宽度可为0.01厘米~10厘米,厚度为10纳米~100微米。
可以理解,所述上电极18可以进一步包括至少两个重叠设置的有序碳纳米管薄膜180。相邻的两个有序碳纳米管薄膜180中的碳纳米管沿同一方向排列或沿不同方向排列,具体地,相邻的两个有序碳纳米管薄膜180中的碳纳米管具有一交叉角度α,且0度≤α≤90度,具体可依据实际需求制备。可以理解,由于上电极18中的有序碳纳米管薄膜180可重叠设置,故,上述上电极18的厚度不限,可根据实际需要制成具有任意厚度的上电极18。
所述有序碳纳米管薄膜180是由碳纳米管阵列经进一步处理得到的,其长度和宽度可以较准确地控制。该有序碳纳米管薄膜180中碳纳米管首尾相连,且长度相等并均匀、有序分布、相邻的碳纳米管之间具有空隙,从而使得所述碳纳米管结构具有均匀的阻值分布和透光特性。所述碳纳米管结构具有很好的韧性和机械强度,故,采用该碳纳米管结构作上电极,可以相应提高所述太阳能电池的耐用性。
可以理解,所述上电极18也可是其他的碳纳米管结构,如碳纳米管线、碳纳米管复合材料等,只需具有透光性、导电性及耐用性等特性即可。
太阳光照射到所述碳纳米管结构,并通过该碳纳米管结构中相邻的碳纳米管之间的空隙照射到所述太阳能电池10中的多个凹孔142内,太阳光通过所述凹孔142的内壁多次反射,从而增加了该太阳能电池10中所述硅片衬底14的上表面143的陷光性能。在所述多个凹孔142内,P型硅片衬底和N型掺杂材料接触在一起的面形成有多个P-N结。在接触面上N型掺杂材料多余电子趋向P型硅片衬底,并形成阻挡层或接触电位差。当P型硅片衬底接正极,N型掺杂材料接负极,N型掺杂材料多余电子和P-N结上电子容易往正极移动,且阻挡层变薄接触电位差变小,即电阻变小,可形成较大电流。即,所述P-N结在太阳光的激发下产生多个电子-空穴对,电子-空穴对在静电势能作用下分离,N型掺杂材料中的电子向所述碳纳米管结构移动,P型硅片衬底中的空穴向所述背电极12移动,然后被背电极12和作为上电极的碳纳米管结构收集,这样外电路就有电流通过。
所述太阳能电池具有以下优点:其一,碳纳米管结构具有良好的吸收太阳光能力,所得到的太阳能电池具有较高的光电转换效率;其二,碳纳米管结构具有很好的韧性和机械强度,故,采用碳纳米管结构作上电极,可以相应的提高太阳能电池的耐用性;其三,由于碳纳米管结构是采用从碳纳米管阵列中直接拉取获得而制成,易于操作,故所制得的太阳能电池成本低;其四,由于碳纳米管结构具有较均匀的结构,故,采用碳纳米管结构作上电极,可使得上电极具有均匀的电阻,从而提高太阳能电池的性能;其五,碳纳米管结构中相邻的碳纳米管之间具有均匀分布的空隙,故,故,采用碳纳米管结构作上电极,可使得上电极对太阳光具有很好的透光性。
另外,本领域技术人员还可在本发明精神内做其他变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (15)
1.一种太阳能电池,其包括:
一硅片衬底,该硅片衬底的上表面形成有多个间隔设置的凹孔;
一背电极,该背电极设置于所述硅片衬底的下表面,且与该硅片衬底表面欧姆接触;
一掺杂硅层,该掺杂硅层形成于所述凹孔的内表面;
一上电极,该上电极设置于所述硅片衬底的上表面;
其特征在于,进一步包括多个金属层,且所述上电极包括一碳纳米管结构,该碳纳米管结构对应所述凹孔的部分悬空设置,且该碳纳米管结构既用于透过太阳光又用于收集电流,所述多个金属层分别设置于所述硅片衬底的上表面和所述碳纳米管结构之间。
2.如权利要求1所述的太阳能电池,其特征在于,所述碳纳米管结构包括均匀分布的碳纳米管。
3.如权利要求1所述的太阳能电池,其特征在于,所述碳纳米管结构包括无序碳纳米管层或者有序碳纳米管层。
4.如权利要求3所述的太阳能电池,其特征在于,所述无序碳纳米管层包括多个无序排列的碳纳米管。
5.如权利要求3所述的太阳能电池,其特征在于,所述有序碳纳米管层包括多个有序排列的碳纳米管。
6.如权利要求3所述的太阳能电池,其特征在于,所述有序碳纳米管层包括至少一有序碳纳米管薄膜,该有序碳纳米管薄膜通过直接拉伸一碳纳米管阵列获得,且包括沿不同方向排列或沿同一方向排列的碳纳米管。
7.如权利要求6所述的太阳能电池,其特征在于,所述有序碳纳米管薄膜包括多个首尾相连且长度相等的碳纳米管束,该碳纳米管束的两端通过范德华力相互连接,每个碳纳米管束包括多个长度相等且平行排列的碳纳米管。
8.如权利要求6所述的太阳能电池,其特征在于,所述有序碳纳米管层包括至少两个重叠设置的有序碳纳米管薄膜。
9.如权利要求8所述的太阳能电池,其特征在于,所述相邻两个有序碳纳米管薄膜中的碳纳米管之间具有一交叉角度α,且0度≤α≤90度。
10.如权利要求1所述的太阳能电池,其特征在于,所述硅片衬底为P型单晶硅片,该P型单晶硅片的厚度为200微米~300微米。
11.如权利要求1所述的太阳能电池,其特征在于,所述多个凹孔的间距为10微米~30微米,深度为50微米~70微米。
12.如权利要求1所述的太阳能电池,其特征在于,所述掺杂硅层为掺杂有磷或者砷的N型硅层。
13.如权利要求1所述的太阳能电池,其特征在于,该太阳能电池进一步包括一第一电极和一第二电极,该第一电极和第二电极间隔设置于所述碳纳米管结构的上表面,并与该碳纳米管结构的上表面电接触。
14.如权利要求1所述的太阳能电池,其特征在于,该太阳能电池进一步包括一减反层,该减反层设置于所述碳纳米管结构的上表面或者下表面。
15.如权利要求14所述的太阳能电池,其特征在于,所述减反层的材料为二氧化钛或者氧化锌铝。
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