CN101495821A - Temperature sensing and prediction in ic sockets - Google Patents
Temperature sensing and prediction in ic sockets Download PDFInfo
- Publication number
- CN101495821A CN101495821A CNA2006800078014A CN200680007801A CN101495821A CN 101495821 A CN101495821 A CN 101495821A CN A2006800078014 A CNA2006800078014 A CN A2006800078014A CN 200680007801 A CN200680007801 A CN 200680007801A CN 101495821 A CN101495821 A CN 101495821A
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- Prior art keywords
- temperature
- encapsulation
- measures
- surface temperature
- heater
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- 238000000034 method Methods 0.000 claims abstract description 23
- 238000012360 testing method Methods 0.000 claims description 40
- 238000005538 encapsulation Methods 0.000 claims description 23
- 238000005259 measurement Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
- G01K7/425—Thermal management of integrated systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Power Sources (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
An apparatus and method are provided which preferably combines temperature sensing and prediction for more accurate temperature control of integrated circuits. An IC temperature sensing and prediction device (20) includes a current sensing device (26) that measures current passing through an IC (24), and a temperature control apparatus (28) that measures a surface temperature of the IC (24). The device further includes an electronic controller (30) that calculates the power consumed by the IC (24) according to the measured current and adjusts the temperature of a heater or cooler (28) responsive to the measured surface temperature and power consumption.
Description
Technical field
The present invention relates to integrated circuit, relate more specifically to be used for integrated circuit is carried out the temperature sensing and the prediction of more precise dose control.
Background technology
Integrated circuit (IC) is encapsulated in it must be tested after manufactured, carries out with the temperature that improves usually, and this normally pre-burning (burn-in) is handled.In this processing procedure, often need control the temperature of IC, sensor and other element.The technology of this respect by broad practice a lot of year.System generally comprises heater (or cooler), temperature sensor and comparator, and this comparator applies and the voltage that records on temperature sensor and the proportional energy of difference of reference voltage to heater.This energy is applied in so that the difference of this voltage reduces in suitable direction.For this reason, the temperature sensor of many types and temperature control modules are extensively sold.Because the temperature sensitivity of IC, a kind of typical application are in pre-burning is handled IC to be carried out temperature control.
In order to obtain more accurate test result, expectation can be controlled the temperature of each tested independent IC.In not having independent temperature controlled test furnace, the actual temperature of each IC may change because of convection current, heat radiation or the radiation of different rates in the stove.Can realize independent temperature control by the temperature of each IC of sensing and by the heat of using independent heater to change each IC of guiding.
Independent IC being carried out two such examples of sensing and heating can authorize Jones the No.5 of (Jones), and 164,661 United States Patent (USP)s and authorize Hamilton the No.5 of (Hamilton) find in 911,897 United States Patent (USP)s.Two patents of this of Jones and Hamilton all disclose a kind of test jack that has sensor, and this sensor and IC directly contact the skin temperature (casetemperature) of this IC of sensing.
Shown in Figure 10 as the patent of Hamilton, temperature sensor 110 is set in the sensor housing 112 of insulation, make this sensor 110 from this housing 112 stretch out with just in the housing contacts of tested integrated circuit.The Hamilton patent disclosure surface temperature (skin temperature) of IC in the test is measured, but openly be not used for determining any device or the method for IC central temperature (junction temperature).
Thereby Jones's patent disclosure by calculating the junction temperature that junction temperature is determined the IC in the test according to the skin temperature of the IC that senses and the predetermined thermal profile of IC.The determining of the junction temperature of IC is subjected to the influence of the time delay between the knot of temperature sensor on the IC case surface that the thermal time constant by material causes and IC.
Therefore, the system and method for the junction temperature of the IC in a kind of faster definite test is favourable.
Summary of the invention
An aspect of of the present present invention is the method for temperature of control integrated circuit (IC).This method comprises: the surface temperature of this IC of sensing, and the prediction junction temperature, and based on the junction temperature reconciliation statement surface temperature of predicting.Preferably, the prediction junction temperature comprises: measure the power consumption of IC and calculate adjustment value at measured surface temperature based on the thermal characteristics of this power consumption and IC.
Another aspect of the present invention is IC temperature sensing and predict device.This equipment comprises the sensor device and the temperature control equipment that changes the IC surface temperature that is used for measuring by the electric current of IC.This equipment also comprises electronic controller, the secondary signal that it receives first signal of the electric current that passes through IC of representing measurement and receive expression IC surface temperature from temperature control equipment from sensor device.Preferably, this temperature control equipment comprises temperature sensor and heater or cooler, and this temperature sensor and IC thermo-contact are also measured the surface temperature of this IC, and this heater or cooler directly contact this IC.
Description of drawings
By following detailed description of reference and combination accompanying drawing subsequently, the above and other feature of embodiments of the invention and advantage will be conspicuous.
Fig. 1 is the schematic block diagram according to the example embodiment of the IC temperature sensing of principle of the present invention and predict device.
Fig. 2 is the simplified block diagram of an embodiment of IC temperature sensing and predict device 20 among Fig. 1.
Fig. 3 is the plane of the simplification of the test board system that is positioned at test or burn-off chamber according to another embodiment of the present invention.
The specific embodiment
According to following disclosure, those skilled in the art is apparent that, the present invention described here can be embodied in many different forms and should not be limited to specific embodiment in this proposition, and provides these embodiment to make present disclosure fully to pass on principle of the present invention to those skilled in the art.
Fig. 1 shows according to principle of the present invention, is used to provide the simplified block diagram of the temperature controlled integrated circuit of accurate IC (IC) temperature sensing and prediction unit 20.Integrated circuit comprises independent wafer and IC encapsulation, and the term " integrated circuit (IC) " that runs through this specification comprises the integrated circuit of form of ownership.IC temperature sensing and prediction unit 20 can be used for comprising the test of IC pre-burning, test and programming, or are used for carrying out IC the application of accurate temperature control.
For DUT24 being carried out more precise dose control, knot (or wafer) temperature is preferably measured together with surface temperature.As known in the art, junction temperature is IC operation and key feature steady in a long-term.Yet because the intermediate materials (intervening material) among the DUT24 (for example package casing material (being the IC encapsulation)), junction temperature can not directly be measured.This intermediate materials causes the junction temperature of DUT24 and the hot time delay between the surface temperature.
The method of the junction temperature of a kind of definite DUT24 is based on the naive model (T=P θ, wherein T is a temperature, P is a power consumption, θ is a thermal resistance) of a similar Ohm's law (V=IR, wherein V is a voltage, I is an electric current, R is a resistance).This thermal model is all voltage with temperature etc., and power etc. is all electric current.Packaging thermal resistance is measuring the heat dissipation ability from the active surface (knot) of wafer to specified reference point (shell, plate, surrounding environment etc.).For example, tie shell thermal resistance (θ jc) tolerance equipment from wafer surface to the encapsulation the top or the ability of lower surface burn-off.IC manufacturer provides the thermal resistance information about their element usually.Commercialization for example
Hot analysis software also be useful when being encapsulated in the predict device hot property.
In case known the quantity of power that DUT24 consumes, junction temperature can be predicted, thereby controlled.Because skin temperature is measured by temperature control equipment 28, system controller 30 can use following formula to calculate junction temperature then:
Tj=Tc+P θ jc, wherein
Tj is the temperature of knot or wafer;
Tc is the temperature of shell or encapsulation; And
The power that P is dissipated by equipment (unit is watt).
Therefore, for determining that DUT24 should be heated the probe temperature that still cooling obtains to expect, system controller 30 can by with from temperature control equipment 28 sensed to skin temperature use the power consumption that calculates to control the junction temperature of DUT24, thereby control the temperature of DUT24 more accurately.Because the voltage drop value of measuring on the current-sense resistor 26 is not influenced by the time delay relevant with measuring skin temperature, temperature sensing and predict device 20 also provide the temperature backfeed loop of acceleration to system controller 30.
And, for given power consumption level, if sensed to skin temperature with the expection junction temperature differ too big, the problem of given DUT24 can more easily be discerned.For example, the thermal characteristics of given device type can be predicted.If equipment is made mistakenly, thus the thermal characteristics of its actual thermal characteristics and expectation different (for example misplacement is contained between knot and the shell and has produced bigger thermal resistance), and for certain given power consumption level, the skin temperature that measures may be lower than desired value so.Therefore, the power consumption of measuring skin temperature and calculating DUT24 provides the extraneous information that can discern defective IC.
Fig. 2 illustrates the simplified block diagram of an embodiment of IC temperature sensing among Fig. 1 and predict device 20.In an illustrated embodiment, DUT24 is set at 23 li of IC test jacks on the test board 42.Test jack 23 can be to be designed to receive the socket that IC tests, and described test comprises pre-burning, test and the programming of DUT24.It will be appreciated that the IC test of use test socket only is the applicable example of inventive concept of the present invention.The present invention also can be applied to the equipment that directly is fixed to printed circuit board (PCB) (PCB).
Fig. 2 also comprises a simple circuit diagram, and it illustrates system controller 30 and communicates by letter with temperature control equipment 28 with temperature sensor 48.System controller 30 is also connected to current sense device 26, and this current sense device 26 can be positioned on the plate 42.In one embodiment, system controller 30 can be embedded in the socket cover 44.
Fig. 3 shows according to another embodiment of the invention, the simplified plan view of the system of the test board 42 in test or burn-off chamber.The matrix of being made up of DUT24 and temperature sensing and predict device 20 is positioned on each test board 42.Test board 42 is communicated by letter with driver electronics 70 with external power source.This power supply and driver 70 communicate by means of data/power bus 71 and test board 42.This power supply and driver electronics 70 are served as system controller, and its permission user decides the probe temperature at the expectation of each DUT24.
Although described example embodiment of the present invention, clearly, under the inspiration of above-mentioned instruction, those skilled in the art can modify and change.Therefore, it will be appreciated that the change to disclosed embodiments of the invention that can make still drops in the spirit and scope of claim.
Claims (20)
- One kind control IC (24) method of temperature, comprising:The surface temperature of the described IC of sensing (24);Predict the junction temperature of described IC (24);The surface temperature of regulating described IC (24) according to the junction temperature of described IC (24) of prediction.
- 2. the method for claim 1, wherein the surface temperature of the described IC of sensing (24) comprises:Temperature sensor (48) is thermally connected to described IC (24).
- 3. method as claimed in claim 2, wherein said temperature sensor is arranged in the IC socket cover.
- 4. the method for claim 1, predict that wherein described junction temperature comprises:The quantity of power that measurement is consumed by described IC; AndCalculate adjustment value according to the thermal characteristics of power consumption that measures and described IC at the surface temperature that measures.
- 5. method as claimed in claim 4, wherein said thermal characteristics comprises the thermal impedance of described IC.
- 6. method as claimed in claim 4 also comprises:Described surface temperature that measures and the described power consumption that measures are compared;According to the described thermal characteristics of described IC,, judge that described IC is defective if when described surface temperature that measures and the described power consumption that measures are inconsistent.
- 7. the method for claim 1, the surface temperature of wherein regulating described IC comprises:Heater or cooler are thermally connected to described IC;
- 8. method as claimed in claim 7, wherein said heater or cooler are arranged in the socket cover of described IC.
- 9. method as claimed in claim 7, wherein a temperature sensor is arranged in described heater or the cooler, makes insulating materials that described temperature sensor and described heater or cooler heat are kept apart.
- 10. the method for claim 1 also comprises:Described IC is arranged in the test jack;The described IC of thermally coupled measures temperature;Measure the electric current of described IC; AndThe IC temperature that measures based on measured electric current adjustment.
- 11. a method that is used for predicting the junction temperature of IC (24) comprises:The quantity of power that measurement is consumed by described IC (24);The surface temperature of the described IC of sensing (24); AndDetermine adjustment value according to the thermal characteristics of power consumption that measures and described IC (24) at the surface temperature of institute's sensing.
- 12. method as claimed in claim 11 is wherein calculated the power that is consumed by described IC and is comprised:Current sense device is coupled to described IC;Measure the voltage drop on the described current sense device.
- 13. method as claimed in claim 11, wherein said thermal characteristics comprises the thermal resistance value of described IC.
- 14. IC temperature sensing and predict device (20) comprising:Current sense device (26), it is provided for measuring the magnitude of current by IC encapsulation (24);Electronic controller (30) receives first signal from described current sense device (26), and described first signal indication is by the magnitude of current of described IC encapsulation (24);Temperature control equipment (28) is used for changing the surface temperature that described IC encapsulates (24), and wherein said electronic controller (30) also receives secondary signal from described temperature control equipment (28), and described secondary signal is represented the surface temperature of described IC encapsulation (24).
- 15. equipment as claimed in claim 14, wherein said temperature control equipment comprises:Temperature sensor, it is provided for the described IC encapsulation of thermo-contact and measures the surface temperature of described IC encapsulation; AndHeater or cooler, it is set up with described IC encapsulation and directly contacts.
- 16. equipment as claimed in claim 14, wherein said electronic controller calculate the power that is consumed by described IC encapsulation according to the amount of the voltage drop on the described current sense device.
- 17. equipment as claimed in claim 16, wherein said controller are programmed the temperature that changes heater or cooler in response to the surface temperature that measures with the power that is consumed by described IC encapsulation that calculates.
- 18. a system that is used for test I C encapsulation comprises:Test cabinet (68);Test board (42), it is arranged in the described test cabinet (68);IC encapsulates (24), and it is arranged on the described test board (42);Temperature sensor (48), it is provided to the described IC encapsulation of thermo-contact (24);Heater or cooler (28), it is provided to the directly described IC encapsulation of contact (24);Current sense device (26), it is provided to the magnitude of current of sensing by described IC encapsulation (24);Electronic controller (30), it is provided for from described temperature sensor (48) and described current sense device (26) received signal, and wherein said electronic controller (30) is programmed the temperature that changes described heater or cooler (28) in response to the surface temperature of quantity of power that is consumed by described IC encapsulation (24) and the described IC encapsulation (24) that measures.
- 19. system as claimed in claim 18, wherein said electronic controller calculates the power that is consumed by described IC encapsulation by the voltage drop of measuring on the described current sense device.
- 20. system as claimed in claim 18, wherein said electronic controller also is programmed the IC that relatively comes to determine that comes according to the surface temperature of the quantity of power that is consumed by described IC encapsulation and the described IC encapsulation that measures and whether encapsulates defectiveness.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65980805P | 2005-03-08 | 2005-03-08 | |
| US60/659,808 | 2005-03-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101495821A true CN101495821A (en) | 2009-07-29 |
Family
ID=36953894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800078014A Pending CN101495821A (en) | 2005-03-08 | 2006-03-03 | Temperature sensing and prediction in ic sockets |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1866656A2 (en) |
| JP (1) | JP2008537637A (en) |
| KR (1) | KR20070114310A (en) |
| CN (1) | CN101495821A (en) |
| WO (1) | WO2006096543A2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102052973A (en) * | 2009-11-04 | 2011-05-11 | 通用汽车环球科技运作公司 | Methods and systems for thermistor temperature processing |
| CN102298102A (en) * | 2010-06-01 | 2011-12-28 | 发那科株式会社 | Abnormity inspection system of cooling part of circuit |
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| CN103364739A (en) * | 2012-03-29 | 2013-10-23 | 北京动力源科技股份有限公司 | Method for testing node temperature rise of switch tube in switch power source |
| CN103364099A (en) * | 2012-03-28 | 2013-10-23 | 三星电子株式会社 | System and method of predicting temperature of device |
| CN103765234A (en) * | 2011-07-11 | 2014-04-30 | 密克罗奇普技术公司 | Temperature measurement of active device under test on strip tester |
| CN103890691A (en) * | 2011-10-31 | 2014-06-25 | 惠普发展公司，有限责任合伙企业 | Airflow block response in a system |
| CN106546357A (en) * | 2015-09-23 | 2017-03-29 | 中兴通讯股份有限公司 | A kind of method of detection environment temperature, device and electronic equipment |
| CN110928340A (en) * | 2018-09-19 | 2020-03-27 | 中车株洲电力机车研究所有限公司 | Active junction temperature control system and method for power device |
| CN111443278A (en) * | 2020-04-21 | 2020-07-24 | 普源精电科技股份有限公司 | Chip, chip temperature detection module and method |
| TWI701447B (en) * | 2019-03-15 | 2020-08-11 | 鴻勁精密股份有限公司 | Test device with temperature control unit and test classification equipment for its application |
| CN111883516A (en) * | 2020-07-24 | 2020-11-03 | 青岛歌尔智能传感器有限公司 | Packaging structure and packaging method of integrated module and electronic equipment |
| CN113182198A (en) * | 2020-01-14 | 2021-07-30 | 鸿劲精密股份有限公司 | Testing device with temperature control unit and testing classification equipment applied by same |
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| US8384395B2 (en) | 2010-05-06 | 2013-02-26 | Texas Instrument Incorporated | Circuit for controlling temperature and enabling testing of a semiconductor chip |
| JP5742642B2 (en) * | 2011-10-06 | 2015-07-01 | 三菱電機株式会社 | Semiconductor element junction temperature estimation method, estimation system, and estimation program |
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| KR102670897B1 (en) * | 2021-08-09 | 2024-05-31 | 리노공업주식회사 | Test socket |
| CN116209910A (en) * | 2021-09-30 | 2023-06-02 | 爱德万测试公司 | Control apparatus for controlling automated test equipment (ATE), ATE, methods for controlling ATE, methods for operating ATE and computer programs for performing such methods including temperature estimation or determination |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000304804A (en) * | 1999-04-26 | 2000-11-02 | Denken Eng Kk | Burn-in device and burn-in method |
| US6668570B2 (en) * | 2001-05-31 | 2003-12-30 | Kryotech, Inc. | Apparatus and method for controlling the temperature of an electronic device under test |
| JP4148677B2 (en) * | 2001-12-19 | 2008-09-10 | 富士通株式会社 | Dynamic burn-in equipment |
-
2006
- 2006-03-03 EP EP06736932A patent/EP1866656A2/en not_active Withdrawn
- 2006-03-03 WO PCT/US2006/007687 patent/WO2006096543A2/en active Application Filing
- 2006-03-03 CN CNA2006800078014A patent/CN101495821A/en active Pending
- 2006-03-03 KR KR1020077022925A patent/KR20070114310A/en not_active Withdrawn
- 2006-03-03 JP JP2008500780A patent/JP2008537637A/en active Pending
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| CN102052973B (en) * | 2009-11-04 | 2014-07-30 | 通用汽车环球科技运作公司 | Methods and systems for thermistor temperature processing |
| CN102052973A (en) * | 2009-11-04 | 2011-05-11 | 通用汽车环球科技运作公司 | Methods and systems for thermistor temperature processing |
| CN102298102A (en) * | 2010-06-01 | 2011-12-28 | 发那科株式会社 | Abnormity inspection system of cooling part of circuit |
| CN102298102B (en) * | 2010-06-01 | 2014-11-26 | 发那科株式会社 | Abnormity inspection system of cooling part of circuit |
| CN102636291A (en) * | 2011-02-15 | 2012-08-15 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| CN102636291B (en) * | 2011-02-15 | 2013-12-25 | 三一电气有限责任公司 | IGBT (insulated gate bipolar transistor) conjunction temperature detection device and method thereof |
| CN103765234A (en) * | 2011-07-11 | 2014-04-30 | 密克罗奇普技术公司 | Temperature measurement of active device under test on strip tester |
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| CN103364099A (en) * | 2012-03-28 | 2013-10-23 | 三星电子株式会社 | System and method of predicting temperature of device |
| CN103364739B (en) * | 2012-03-29 | 2016-04-20 | 北京动力源科技股份有限公司 | A kind of node method for testing temperature rise of Switching Power Supply breaker in middle pipe |
| CN103364739A (en) * | 2012-03-29 | 2013-10-23 | 北京动力源科技股份有限公司 | Method for testing node temperature rise of switch tube in switch power source |
| CN106546357A (en) * | 2015-09-23 | 2017-03-29 | 中兴通讯股份有限公司 | A kind of method of detection environment temperature, device and electronic equipment |
| CN106546357B (en) * | 2015-09-23 | 2020-06-02 | 中兴通讯股份有限公司 | A method, device and electronic device for detecting ambient temperature |
| CN110928340A (en) * | 2018-09-19 | 2020-03-27 | 中车株洲电力机车研究所有限公司 | Active junction temperature control system and method for power device |
| TWI701447B (en) * | 2019-03-15 | 2020-08-11 | 鴻勁精密股份有限公司 | Test device with temperature control unit and test classification equipment for its application |
| CN113182198A (en) * | 2020-01-14 | 2021-07-30 | 鸿劲精密股份有限公司 | Testing device with temperature control unit and testing classification equipment applied by same |
| CN113182198B (en) * | 2020-01-14 | 2023-08-29 | 鸿劲精密股份有限公司 | Testing device with temperature control unit and testing classification equipment applied by same |
| CN111443278A (en) * | 2020-04-21 | 2020-07-24 | 普源精电科技股份有限公司 | Chip, chip temperature detection module and method |
| CN111883516A (en) * | 2020-07-24 | 2020-11-03 | 青岛歌尔智能传感器有限公司 | Packaging structure and packaging method of integrated module and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070114310A (en) | 2007-11-30 |
| EP1866656A2 (en) | 2007-12-19 |
| WO2006096543A3 (en) | 2009-04-16 |
| JP2008537637A (en) | 2008-09-18 |
| WO2006096543A2 (en) | 2006-09-14 |
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