CN101475139A - MEMS horizontal resonant vibration type magnetometer - Google Patents
MEMS horizontal resonant vibration type magnetometer Download PDFInfo
- Publication number
- CN101475139A CN101475139A CNA2009100771713A CN200910077171A CN101475139A CN 101475139 A CN101475139 A CN 101475139A CN A2009100771713 A CNA2009100771713 A CN A2009100771713A CN 200910077171 A CN200910077171 A CN 200910077171A CN 101475139 A CN101475139 A CN 101475139A
- Authority
- CN
- China
- Prior art keywords
- glass
- mems
- silicon
- horizontal resonant
- movable structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 11
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 108091092878 Microsatellite Proteins 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
The invention discloses an MEMS horizontal resonant magnetometer in the technical field of sensor manufacture. The invention adopts a technical proposal that a meter head chip of the MEMS horizontal resonant magnetometer consists of a silicon chip and a glass substrate, and the silicon chip is manufactured on the surface of the glass substrate through a silicon-glass anode bonding mode; the silicon chip consists of a movable structure and a fixed structure, wherein the movable structure comprises three resonance beams and two or four groups of symmetrical comb capacitance polar plates; the mixed structure comprises two or four groups of comb capacitance polar plates fixed on the glass substrate; the upper surface of a resonance beam is provided with a SiNx insulating layer; the upper surface of the SiNx insulating layer is provided with a metal conducting wire layer; the surface of the glass substrate is provided with ten metal polar plates; the wide part of the metal polar plates is mostly led with ten capacitance detection conducting wires through pressure welding; and the wide parts at two sides of the metal conducting wire layer are mostly led with drive current conducting wires through the pressure welding. The meter head chip has well arranged internal structure layer, is convenient to process, and has better linearity degree and expandability.
Description
Technical field
The invention belongs to technical field of sensor manufacture, relate in particular to a kind of MEMS horizontal resonant mode gauss meter.
Background technology
Magnetometer is the sensor that is used for measuring the surrounding environment magnetic field intensity, has a wide range of applications in fields such as industry, agricultural, military affairs, biology, medical treatment, Aero-Space.Along with improving constantly of development of technology and demand, magnetometer also develops towards directions such as microminiaturization, low-power consumption, low cost, high sensitivity.
MEMS (Micro Electro-Mechanical System, MEMS) horizontal resonant mode gauss meter is the miniature magnetometer that a kind of MEMS of employing micro-processing technology is made, adopt the horizontal resonant mode sensitive structure, have that volume is little, in light weight, precision is high, low in energy consumption, advantage such as cost is low, technology is simple, have bright development prospect.Its operation principle is the size that the Lorentz force of utilizing electrified wire to produce in magnetic field detects magnetic field intensity.Alternating current by certain frequency in cantilever beam, its frequency equals the resonant frequency of cantilever beam, like this, when there is magnetic field in the external world, the effect that electric current in the cantilever beam will be subjected to Lorentz force makes cantilever beam produce vibration, its amplitude and external magnetic field intensity big or small proportional uses electric capacity to come the size of detected amplitude, can obtain the information of magnetic field intensity.
The performance temperature influence of MEMS horizontal resonant mode gauss meter is less, and one item important use is the attitude control field at aircraft, vehicle and ship.By the magnetometer of 3 quadratures is installed at the correct position of the object of needs control, can obtain the magnetic field strength component information on all directions, and with IGRF (International Geomagnetic Reference Field, international geomagnetic reference field) the size and Orientation information of this position earth magnetic field intensity compares in the model, can obtain the attitude information of testee.Along with the continuous development of satellite technology especially microsatellite technology, the demand of miniature magnetometer is also become more and more stronger, use the miniature magnetometer of MEMS fabrication techniques also to obtain more and more widely concern.
At present, the miniature magnetometer of MEMS divides from principle, mainly contains hall effect type magnetometer, magnetoresistance formula magnetometer, fluxgate type magnetometer and based on resonant mode gauss meter of Lorentz force etc.Wherein magnetoresistance formula and hall effect type magnetometer are not suitable for the detection of Weak magentic-field.Though fluxgate type is fit to the detection of low-intensity magnetic field,, can not adapt to the requirement of each field development because the reduction of size can directly cause the reduction of sensitivity.And resonant mode gauss meter can make full use of silicon materials favorable mechanical characteristic, have highly sensitive and the high characteristics of precision, and be not vulnerable to influence of temperature variation, and structure is simple relatively, and difficulty of processing is little, has remarkable advantages.
The MEMS resonant mode gauss meter is divided into two kinds of the formula of rocking and horizontals, the formula of the rocking MEMS magnetometer of Tsing-Hua University development in recent years for example, the wire coil that its utilization is connected with alternating current is subjected to the effect of alternation Lorentz force in by measuring magnetic field, this Lorentz force is in around turning round the resonant condition that beam reverses movable structure, cause rocking on coil and the substrate of glass capacitance between the metal polar plate and produce and exchanges variation, obtain the information of magnetic field intensity by detection capacitance variations amplitude.This structure is owing to have lattice coil, comparatively complicated on processing technology, and the distance of rocking between pole plate and the base metal plate is inverse relation with capacitance, and range and sensitivity are restricted, add that the capacitance variations of rocking is non-linear, so its performance is subjected to certain restriction.
The MEMS horizontal resonant mode detects principle and is similar to the formula of rocking, but the mode of vibration of resonance beam changes in the horizontal direction, thereby has the higher sensitivity and the better linearity, and does not have three-dimensional lead loop and the magnetic material of making, and processing is relatively easy.
Summary of the invention
The objective of the invention is to, solve the low and big problem of difficulty of processing of the linearity of existing MEMS resonant mode gauss meter.
Technical scheme of the present invention is that a kind of MEMS horizontal resonant mode gauss meter comprises the gauge outfit chip, it is characterized in that described gauge outfit chip is produced on glass basic surface by silicon chip and substrate of glass by silicon-glass anode linkage mode;
Described silicon chip is made up of movable structure and fixed structure, and wherein, movable structure comprises 3 resonance beam and 2 or 4 groups of symmetrical comb; Fixed structure comprises 2 or 4 groups of broach capacitor plates that are fixed in substrate of glass;
Described resonance beam upper surface is manufactured with the SiNx insulating barrier identical with the resonance beam shape;
Described SiNx insulating barrier upper surface is manufactured with and the identical metal carbonyl conducting layer of SiNx insulating barrier shape;
The broach capacitor plate of described movable structure is corresponding one by one with the broach capacitor plate of described fixed structure, constitutes differential capacitor;
Described glass basic surface is made 10 metal polar plates as the lead pin that detects electric capacity by the sputter mode;
10 capacitance detecting leads are drawn in the roomy part pressure welding of described metal polar plate, are used for capacitance change is detected;
The roomy part in described metal carbonyl conducting layer both sides is drawn the drive current lead by pressure welding, is used to pass through drive current.
Described silicon chip adopts low-resistance silicon to make.
Described movable structure is identical with fixed structure thickness, all adopts ICP technology to make.
Described SiNx insulating layer material is a silicon nitride, and is produced on the upper surface of movable structure by the mode of deposit.
Described plain conductor layer material is gold or aluminium, and is produced on the upper surface of SiNx insulating barrier by the mode of deposit or plating.
Gauge outfit chip internal structure of the present invention is well arranged, and does not have intersection and stereochemical structure between each layer, is convenient to processing; Simultaneously, than the torsional pendulum resonant vibration type magnetometer, the present invention has the better linearity and extensibility.
Description of drawings
Fig. 1 is a MEMS horizontal resonant mode gauss meter gauge outfit chip internal substrate of glass stereogram.
Fig. 2 is a MEMS horizontal resonant mode gauss meter gauge outfit chip internal structure schematic diagram.
Fig. 3 is a MEMS horizontal resonant mode gauss meter fundamental diagram.
Fig. 4 is a MEMS horizontal resonant mode gauss meter gauge outfit chip internal structure level enlarged diagram.
Fig. 5 is a resonance beam shape scheme schematic diagram.
The specific embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.Should be emphasized that following explanation only is exemplary, rather than in order to limit the scope of the invention and to use.
The MEMS horizontal resonant mode gauss meter that the present invention proposes, its gauge outfit chip internal structure is formed by silicon chip and substrate of glass two parts bonding.Fig. 1 is a MEMS horizontal resonant mode gauss meter gauge outfit chip internal substrate of glass stereogram.The surface that shows among Fig. 1 is the bonding face of substrate of glass, has made 10 metal polar plates 4 as the lead pin that detects electric capacity by the sputter mode above.Fig. 2 is the cut-away view of MEMS horizontal resonant mode gauss meter gauge outfit chip, and silicon chip part main material is a low-resistance silicon, is produced on the substrate of glass 3, is made up of movable structure and fixed structure by silicon-glass anode linkage mode.Wherein, movable structure comprises 3 resonance beam 1 and 2 or 4 groups of girder constructions that symmetrical comb constitutes, and fixed structure 2 comprises 2 or 4 groups of broach capacitor plates that are fixed in substrate of glass.At the upper surface of resonance beam 1, be manufactured with the metal carbonyl conducting layer 5 identical with the resonance beam shape.
Fig. 3 is a MEMS horizontal resonant mode gauss meter fundamental diagram.Among Fig. 3, the corresponding formation of the broach capacitor plate of movable structure and the broach capacitor plate of fixed structure 2 differential capacitor.Pass to electric current in resonance beam 1, like this, do the time spent as the externally-applied magnetic field of direction and resonance beam 1 quadrature, resonance beam 1 will be subjected to producing deformation along the effect of the Lorentz force of x direction.If pass to alternating current in resonance beam 1, resonance beam 1 will be created in the vibration on the x direction so.When the single order resonant frequency of power frequency that passes through and resonance beam equates, the amplitude of this vibration will be exaggerated Q (quality factor) and doubly be easy to detect.When size one timing of current strength, the amplitude of this vibration will be directly proportional in the intensity of externally-applied magnetic field.This vibration will cause the variation of the broach capacitor plate spacing of the broach capacitor plate of movable structure and fixed structure 2, and then cause changes in capacitance between the two, by detecting the changes in capacitance amount, can obtain the information of externally-applied magnetic field intensity.By fixed structure 2 symmetries are put, can adopt differential mode to detect the changes in capacitance amount, thus the common-mode noise that produces when reducing little capacitance variations.
Capacitance detecting part of the present invention and drive current will be isolated to avoid short circuit, therefore adopt the mode of the three-dimensional lead-in wire of insulating barrier to make.Fig. 4 is a MEMS horizontal resonant mode gauss meter gauge outfit chip internal structure level enlarged diagram.Among Fig. 4, direct bonded silicon wafer 7 on the substrate of glass 3, and silicon chip 7 is connected with metal polar plate 4 on sputtering at substrate of glass 3.During encapsulation, be used for capacitance change is detected by drawing 10 leads in the roomy part pressure welding of metal polar plate 4.At the upper surface of silicon chip 7, make SiNx insulating barrier 6 by the mode of sputter, its shape is identical with metal carbonyl conducting layer 5, and the material of SiNx insulating barrier 6 is a silicon nitride, is used for the isolation drive electric current and detects electric capacity.Make metal carbonyl conducting layer 5 at SiNx insulating barrier 6 upper surfaces by the mode of sputter or plating, its shape is identical with SiNx insulating barrier 6, and complete and silicon chip 7 isolation.The material of metal carbonyl conducting layer 5 is gold or aluminium.During encapsulation, roomy part is drawn lead by pressure welding in its both sides, is used to pass through drive current.The gauge outfit chip internal structure partly adopts SOG (Silicon onGlass) MEMS technology to make, and makes by encapsulation afterwards.Concrete steps are:
1) on substrate of glass 3, makes the Au metal polar plate by stripping technology.
2) on low resistance silicon chip 7, etch step, be used for bonding and use.
3) silicon chip 7 carries out silicon-glass anode linkage with substrate of glass 3, and is thinned to certain thickness.
4) at low resistance silicon chip 7 positive deposit SiNx insulating barriers 6.
5) at SiNx insulating barrier 6 upper surface sputter Au metal levels, and graphical metal level, metal carbonyl conducting layer 5 made.
6) graphical SiNx insulating barrier 6.
7) ICP etching low resistance silicon chip 7 is made resonance beam 1 and fixed polar plate 2, and discharges movable structure.
As shown in Figure 2, the broach capacitor plate number of present embodiment is 10 * 4 pairs, for improving or reducing detection sensitivity, can adopt the quantity of more or less broach electric capacity.Resonance beam 1 shown in Figure 2 is the straight beam shape, and for reducing the movable member system stiffness, resonance beam 1 can adopt other shapes.Fig. 5 is a resonance beam shape scheme schematic diagram, among Fig. 5, the straight beam shape of Fig. 5 (a) for adopting among Fig. 2, adopt as the serpentine shape among " returning " word shape among Fig. 5 (b) or Fig. 5 (c) or the folded beam structure fabrication resonance beam 1 among Fig. 5 (d) can reduce the system stiffness of movable member, raising sensitivity greatly under the situation that does not increase the magnetometer volume.
This advantage is, and is simple in structure, need not magnetic material, and difficulty of processing is low.In addition, the gauge outfit chip internal structure is divided into 4 layers, and is well arranged, and do not have intersection and stereochemical structure between each layer, is convenient to processing.Than the torsional pendulum resonant vibration type magnetometer, the present invention has the better linearity and extensibility.
The above; only for the preferable specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (5)
1, a kind of MEMS horizontal resonant mode gauss meter comprises the gauge outfit chip, it is characterized in that described gauge outfit chip is produced on glass basic surface by silicon chip and substrate of glass by silicon-glass anode linkage mode;
Described silicon chip is made up of movable structure and fixed structure, and wherein, movable structure comprises 3 resonance beam and 2 or 4 groups of symmetrical comb; Fixed structure comprises 2 or 4 groups of broach capacitor plates that are fixed in substrate of glass;
Described resonance beam upper surface is manufactured with the SiNx insulating barrier identical with the resonance beam shape;
Described SiNx insulating barrier upper surface is manufactured with and the identical metal carbonyl conducting layer of SiNx insulating barrier shape;
The broach capacitor plate of described movable structure is corresponding one by one with the broach capacitor plate of described fixed structure, constitutes differential capacitor;
Described glass basic surface is made 10 metal polar plates as the lead pin that detects electric capacity by the sputter mode;
10 capacitance detecting leads are drawn in the roomy part pressure welding of described metal polar plate, are used for capacitance change is detected;
The roomy part in described metal carbonyl conducting layer both sides is drawn the drive current lead by pressure welding, is used to pass through drive current.
2, a kind of MEMS horizontal resonant mode gauss meter according to claim 1 is characterized in that described silicon chip adopts low-resistance silicon to make.
3, a kind of MEMS horizontal resonant mode gauss meter according to claim 1 is characterized in that described movable structure is identical with fixed structure thickness, all adopts ICP technology to make.
4, a kind of MEMS horizontal resonant mode gauss meter according to claim 1 is characterized in that described SiNx insulating layer material is a silicon nitride, and is produced on the upper surface of movable structure by the mode of deposit.
5, a kind of MEMS horizontal resonant mode gauss meter according to claim 1 is characterized in that described plain conductor layer material is gold or aluminium, and is produced on the upper surface of SiNx insulating barrier by the mode of deposit or plating, is used to carry alternating current.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100771713A CN101475139A (en) | 2009-01-19 | 2009-01-19 | MEMS horizontal resonant vibration type magnetometer |
| CN200910131270A CN101533075A (en) | 2009-01-19 | 2009-04-13 | MEMS horizontal resonant mode gauss meter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100771713A CN101475139A (en) | 2009-01-19 | 2009-01-19 | MEMS horizontal resonant vibration type magnetometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101475139A true CN101475139A (en) | 2009-07-08 |
Family
ID=40835933
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100771713A Pending CN101475139A (en) | 2009-01-19 | 2009-01-19 | MEMS horizontal resonant vibration type magnetometer |
| CN200910131270A Pending CN101533075A (en) | 2009-01-19 | 2009-04-13 | MEMS horizontal resonant mode gauss meter |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910131270A Pending CN101533075A (en) | 2009-01-19 | 2009-04-13 | MEMS horizontal resonant mode gauss meter |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101475139A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102241389A (en) * | 2011-06-10 | 2011-11-16 | 清华大学 | Method for packing alkali metal simple substance |
| CN103043604A (en) * | 2012-12-06 | 2013-04-17 | 中国电子科技集团公司第五十五研究所 | Charge release method between silicon-glass bonding interface metal wire and suspension movable structure |
| CN103472410A (en) * | 2013-09-30 | 2013-12-25 | 东南大学 | Dual-torsion-pendulum type micro-electro-mechanical magnetic filed sensor |
| CN103499796A (en) * | 2013-09-30 | 2014-01-08 | 东南大学 | Microcomputer electromagnetic field sensor with comb tooth structure |
| WO2014075407A1 (en) * | 2012-11-19 | 2014-05-22 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN105358990A (en) * | 2013-03-15 | 2016-02-24 | 应美盛股份有限公司 | Magnetometer using magnetic materials on accelerometer |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
| CN106569154A (en) * | 2016-11-15 | 2017-04-19 | 上海交通大学 | Three-shaft fluxgate sensor |
| CN110542869A (en) * | 2019-06-21 | 2019-12-06 | 西北工业大学 | Weak magnetic field measuring device and method based on modal localization effect |
| CN111007442A (en) * | 2019-12-09 | 2020-04-14 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111190126A (en) * | 2017-06-09 | 2020-05-22 | 合肥工业大学 | MEMS magnetic field sensor adopting folded beam structure, preparation process and application |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107356889B (en) * | 2017-06-22 | 2019-08-20 | 东南大学 | A kind of interdigital microcomputer emf sensor of torsional pendulum type |
-
2009
- 2009-01-19 CN CNA2009100771713A patent/CN101475139A/en active Pending
- 2009-04-13 CN CN200910131270A patent/CN101533075A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102241389B (en) * | 2011-06-10 | 2014-01-01 | 清华大学 | Method for packing alkali metal simple substance |
| CN102241389A (en) * | 2011-06-10 | 2011-11-16 | 清华大学 | Method for packing alkali metal simple substance |
| WO2014075407A1 (en) * | 2012-11-19 | 2014-05-22 | 中国科学院上海微系统与信息技术研究所 | Micromechanical magnetic field sensor and application thereof |
| CN103043604B (en) * | 2012-12-06 | 2015-09-02 | 中国电子科技集团公司第五十五研究所 | Charge release between silicon on glass bonding interface metal wire and suspension movable structure |
| CN103043604A (en) * | 2012-12-06 | 2013-04-17 | 中国电子科技集团公司第五十五研究所 | Charge release method between silicon-glass bonding interface metal wire and suspension movable structure |
| CN105358990A (en) * | 2013-03-15 | 2016-02-24 | 应美盛股份有限公司 | Magnetometer using magnetic materials on accelerometer |
| CN103472410B (en) * | 2013-09-30 | 2015-09-23 | 东南大学 | A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type |
| CN103499796B (en) * | 2013-09-30 | 2015-09-09 | 东南大学 | A kind of micro electronmechanical magnetic field sensor of comb structure |
| CN103499796A (en) * | 2013-09-30 | 2014-01-08 | 东南大学 | Microcomputer electromagnetic field sensor with comb tooth structure |
| CN103472410A (en) * | 2013-09-30 | 2013-12-25 | 东南大学 | Dual-torsion-pendulum type micro-electro-mechanical magnetic filed sensor |
| CN105988090A (en) * | 2015-01-30 | 2016-10-05 | 中国科学院上海微系统与信息技术研究所 | Micro-machine magnetic field senor and application thereof |
| CN105988090B (en) * | 2015-01-30 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical magnetic field sensor and its application |
| CN106569154A (en) * | 2016-11-15 | 2017-04-19 | 上海交通大学 | Three-shaft fluxgate sensor |
| CN111190126A (en) * | 2017-06-09 | 2020-05-22 | 合肥工业大学 | MEMS magnetic field sensor adopting folded beam structure, preparation process and application |
| CN111190126B (en) * | 2017-06-09 | 2022-06-07 | 温州大学 | Preparation method of MEMS magnetic field sensor adopting folded beam structure |
| CN110542869A (en) * | 2019-06-21 | 2019-12-06 | 西北工业大学 | Weak magnetic field measuring device and method based on modal localization effect |
| WO2020253795A1 (en) * | 2019-06-21 | 2020-12-24 | 西北工业大学 | Modal localization effect-based weak magnetic field measurement device and method |
| CN111007442A (en) * | 2019-12-09 | 2020-04-14 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101533075A (en) | 2009-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101475139A (en) | MEMS horizontal resonant vibration type magnetometer | |
| CN102680917B (en) | Micro-mechanical magnetic field sensor and preparation method thereof | |
| CN102645565B (en) | Micro machinery magnetic field sensor and preparation method thereof | |
| CN103116144B (en) | Z-direction magnetic field sensor with magnetic orbit structure | |
| CN103116143B (en) | Integrated high-accuracy triaxial magnetic sensor | |
| CN100443900C (en) | Acceleration sensor | |
| CN103105592B (en) | Single-chip three-shaft magnetic field sensor and production method | |
| CN103323795B (en) | Integrated three-axis magnetic sensor | |
| Beeby et al. | Micromachined silicon generator for harvesting power from vibrations | |
| JP2017534855A (en) | Single-chip differential free layer push-pull magnetic field sensor bridge and manufacturing method | |
| CN101059557B (en) | Micro-electro-mechanical system magnetic field sensor and magnetic field measurement method | |
| CN102981131B (en) | Low-noise micro plane fluxgate sensor based on main and auxiliary coil double incentive | |
| CN102914394B (en) | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor | |
| KR20080107418A (en) | Thin film 3 axis fluxgate and the imple-mentation method thereof | |
| CN103499796B (en) | A kind of micro electronmechanical magnetic field sensor of comb structure | |
| CN102116851A (en) | Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology | |
| CN101515026A (en) | Resonance micro electromechanical system magnetic field sensor and measuring method thereof | |
| CN101481083A (en) | Miniaturized fluxgate sensor of micro-electro-mechanism system | |
| CN102759720B (en) | Magnetic sensor easy to encapsulate | |
| CN106443525B (en) | Torsional mode micro-mechanical magnetic field sensor and preparation method thereof | |
| CN104614690A (en) | Micro-array type fluxgate sensor | |
| CN102279373B (en) | Uniaxially electrostatic-driven sensor for weak magnetic field measurement | |
| CN106569154A (en) | Three-shaft fluxgate sensor | |
| CN204389663U (en) | A kind of single-chip difference free layer push-pull type magnetic field sensor electric bridge | |
| CN100459031C (en) | Silicon micromechanical two-dimensional inclination angle sensor chip and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |