CN101393008A - PVDF-based tap-type high-sensitivity SPM probe and measurement method - Google Patents
PVDF-based tap-type high-sensitivity SPM probe and measurement method Download PDFInfo
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- 239000000523 sample Substances 0.000 title claims abstract description 77
- 239000002033 PVDF binder Substances 0.000 title claims abstract description 32
- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 31
- 238000000691 measurement method Methods 0.000 title abstract description 4
- 238000005259 measurement Methods 0.000 claims abstract description 45
- 238000010079 rubber tapping Methods 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 3
- 230000002238 attenuated effect Effects 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 33
- 230000035945 sensitivity Effects 0.000 description 12
- 238000001514 detection method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 5
- 230000001066 destructive effect Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012620 biological material Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 102000004169 proteins and genes Human genes 0.000 description 3
- 108090000623 proteins and genes Proteins 0.000 description 3
- 238000004441 surface measurement Methods 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 238000010219 correlation analysis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
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Abstract
基于PVDF的轻敲式高灵敏度SPM测头及测量方法,其特征是以PVDF压电薄膜为振动梁、以钨探针为扫描探针;振动梁设置为具有弯曲弧度的简支梁,振动梁的左右两端通过夹持结构分别固定在相对设置的两侧压电驱动器的前端,两侧压电驱动器的后端分别固定在各自的悬臂梁上,悬臂梁呈单端悬置设置在测头架上;扫描探针固定设置在振动梁下表面的中心位置上。本发明是以振动梁输出的电荷量的改变表征振动梁由所受微测力而导致的振幅变化,在被测面上进行多点微测力轻敲扫描实现对试样表面的测量。本发明可以实现高空间分辨率、低测量力,适合各种材料,并且可以在空气环境中进行测量。
Tapping high-sensitivity SPM probe and measurement method based on PVDF, characterized in that the PVDF piezoelectric film is used as the vibrating beam, and the tungsten probe is used as the scanning probe; the vibrating beam is set as a simply supported beam with a curved radian The left and right ends of the sensor are respectively fixed to the front ends of the opposite piezoelectric actuators on both sides through the clamping structure, and the rear ends of the piezoelectric actuators on both sides are respectively fixed to the respective cantilever beams. The cantilever beams are suspended on the probe at one end on the frame; the scanning probe is fixedly set at the center of the lower surface of the vibrating beam. The invention uses the change of the electric charge output by the vibrating beam to represent the amplitude change of the vibrating beam caused by the micro-measurement force, and performs multi-point micro-measurement force tap scanning on the measured surface to realize the measurement of the sample surface. The invention can realize high spatial resolution and low measuring force, is suitable for various materials, and can be measured in air environment.
Description
技术领域 technical field
本发明涉及纳米测量装置,更具体地说是一种可用于构成扫描探针显微系统测头,使系统实现纳米微观形貌测量中垂直方向上纳米分辨力的反馈控制;可构成微纳米三坐标测量机的纳米定位探头,实现三坐标测量机探头的纳米定位;可用于构成扫描探针显微系统以实现对柔软易碎试样(如蛋白质分子等生物材料表面)、具有陡峭台阶表面特征的试样(如半导体硅微器件、微机电设备等)进行纳米级分辨率的非破坏性微观表面形貌测量;以及用于构成微纳米三坐标测量机探头以实现微机电器件(MEMS)、微机械零件的测量。The invention relates to a nanometer measurement device, more specifically a measuring head that can be used to form a scanning probe microscope system, so that the system can realize the feedback control of the nanometer resolution in the vertical direction in the measurement of the nanometer microscopic shape; it can form a micro-nano three-dimensional The nano-positioning probe of the coordinate measuring machine realizes the nano-positioning of the probe of the three-coordinate measuring machine; it can be used to form a scanning probe microscope system to realize the surface characteristics of soft and fragile samples (such as the surface of biological materials such as protein molecules) and steep steps Samples (such as semiconductor silicon micro-devices, micro-electro-mechanical devices, etc.) for non-destructive micro-surface topography measurement at nanoscale resolution; Measurement of micromechanical parts.
背景技术 Background technique
近十年来,随着微半导体器件、MEMS、纳米器件等对表面微观形貌测量的高精度要求,以及DNA、蛋白质分子等生物材料表面测量的非破坏性要求,要求测量仪器不仅具有纳米级的分辨率,还要具有尽可能小的测量力。In the past ten years, with the high-precision requirements of micro-semiconductor devices, MEMS, and nano-devices for the measurement of surface micro-topography, as well as the non-destructive requirements for the surface measurement of biological materials such as DNA and protein molecules, it is required that measuring instruments not only have nano-scale resolution, but also with the smallest possible measuring force.
常用的触针式轮廓仪是一种广泛应用于机械表面测量、简单且可靠的精密测量仪器,其测量范围可达到数十毫米,但它的垂直分辨率只能达到数十纳米,且测量过程中触针与被测表面连续接触,横向测力大,易给表面造成划伤,不适合于软材料及具有陡峭微观结构的表面测量。共焦显微镜等光学测量系统,虽然具有非接触测量的优点,且其最高垂直分辨率接近10纳米的水平,但其横向分辨率受聚焦光斑直径的限制而无法提高,而且不适合于非反光材料的测量。扫描隧道显微镜(STM)尽管具有亚纳米的垂直分辨力和非接触测量的优点,但由于测量电流受被测材料导电性的影响很大,不能直接应用于绝缘材料和表面易氧化的材料,且对测量环境的真空度也有很高的要求,因此其使用范围收到了很大的限制。原子力显微镜(AFM)虽然适合于各种材料、多种参数的测量,且具有亚纳米级的垂直分辨率和nN级的测量力,但所采用的探针多数为硅微悬臂型,其有效长度短、尖端曲率半径大、圆锥角通常在30°左右,不适合于大台阶微观表面的测量,而且测头中所用硅悬臂的控制需要采用光杠杆法或光干涉法等附加位置检测系统来实现,光学检测系统所产生的泄漏光不仅影响半导体器件电参数的测量,还可能给表面测量带来干涉误差。因此,结构复杂且难于实现调整和检测。因此,现有的表面形貌测量系统中不具有使用的普遍性。The commonly used stylus profiler is a simple and reliable precision measuring instrument widely used in mechanical surface measurement. Its measurement range can reach tens of millimeters, but its vertical resolution can only reach tens of nanometers, and the measurement process The middle stylus is in continuous contact with the surface to be measured, and the lateral force is large, which is easy to cause scratches on the surface. It is not suitable for the measurement of soft materials and surfaces with steep microstructures. Although optical measurement systems such as confocal microscopes have the advantage of non-contact measurement, and their highest vertical resolution is close to 10 nanometers, their lateral resolution cannot be improved due to the limitation of the focus spot diameter, and they are not suitable for non-reflective materials Measurement. Although the scanning tunneling microscope (STM) has the advantages of sub-nanometer vertical resolution and non-contact measurement, it cannot be directly applied to insulating materials and materials whose surface is easily oxidized because the measurement current is greatly affected by the conductivity of the measured material. There are also high requirements on the vacuum degree of the measurement environment, so its application range is greatly limited. Although the atomic force microscope (AFM) is suitable for the measurement of various materials and parameters, and has sub-nanometer vertical resolution and nN-level measurement force, most of the probes used are silicon micro-cantilever type, and its effective length Short, tip curvature radius is large, and the cone angle is usually about 30°, which is not suitable for the measurement of large-step microscopic surfaces, and the control of the silicon cantilever used in the probe needs to be realized by additional position detection systems such as optical lever method or optical interference method. , the leaked light generated by the optical detection system not only affects the measurement of the electrical parameters of the semiconductor device, but may also bring interference errors to the surface measurement. Therefore, the structure is complicated and adjustment and detection are difficult to realize. Therefore, it is not universally used in the existing surface topography measurement system.
发明内容 Contents of the invention
本发明是为避免上述现有技术所存在的不足之处,提供一种基于PVDF的轻敲式高灵敏度SPM测头及测量方法,以实现高空间分辨率、低测量力、适合各种材料、满足亚毫米微观高度差的表面形貌的测量。In order to avoid the shortcomings of the above-mentioned prior art, the present invention provides a tap type high-sensitivity SPM probe and measurement method based on PVDF to achieve high spatial resolution, low measurement force, suitable for various materials, Measurement of surface topography that meets submillimeter microscopic height differences.
本发明解决技术问题采用如下技术方案:The present invention solves technical problem and adopts following technical scheme:
本发明基于PVDF的轻敲式高灵敏度SPM测头的结构特点是以PVDF压电薄膜为振动梁、以钨探针为扫描探针;所述振动梁设置为具有弯曲弧度的简支梁,振动梁的左右两端通过夹持结构分别固定在相对设置的两侧压电驱动器的前端,两侧压电驱动器的后端分别固定在各自的悬臂梁上,悬臂梁呈单端悬置设置在测头架上;扫描探针固定设置在振动梁下表面的中心位置上。The structural characteristics of the tapping type high-sensitivity SPM measuring head based on PVDF of the present invention is to take the PVDF piezoelectric film as the vibrating beam and the tungsten probe as the scanning probe; The left and right ends of the beam are respectively fixed to the front ends of the opposite piezoelectric actuators on both sides through the clamping structure, and the rear ends of the piezoelectric actuators on both sides are respectively fixed to the respective cantilever beams. on the head frame; the scanning probe is fixedly arranged at the center of the lower surface of the vibrating beam.
本发明基于PVDF的轻敲式高灵敏度SPM测头的测量方法的特点是在两侧压电驱动器上施加振幅和频率可调的交流正弦电压信号作为驱动信号,在驱动信号下,两侧压电驱动器沿水平方向产生往返位移,并通过振动梁使扫描探针沿垂直方向振动;调整驱动信号频率,使振动梁处于近共振状态;扫描过程中,在扫描探针尚未接触到试样表面时,振动梁工作在近共振状态,产生自由振幅A0,自由振幅A0下的振动梁的输出为自由振幅电荷量C0;对于扫描探针在某一点上与试样发生的瞬间接触,振动梁产生衰减振幅A1,衰减振幅A1下的振动梁的输出为衰减电荷量C1,以振动梁输出的电荷量的改变表征振动梁振幅度的变化,在被测面上进行多点微测力轻敲扫描实现对试样表面的测量。The characteristic of the measuring method of the tapping type high-sensitivity SPM measuring head based on PVDF in the present invention is to apply an AC sinusoidal voltage signal with adjustable amplitude and frequency on the piezoelectric drivers on both sides as the driving signal. The driver produces back-and-forth displacement along the horizontal direction, and vibrates the scanning probe in the vertical direction through the vibrating beam; adjust the frequency of the driving signal to make the vibrating beam in a near-resonant state; during the scanning process, when the scanning probe has not touched the sample surface, The vibrating beam works in a near-resonance state, generating free amplitude A 0 , and the output of the vibrating beam under the free amplitude A 0 is the free amplitude charge C 0 ; for the momentary contact between the scanning probe and the sample at a certain point, the vibrating beam The attenuation amplitude A 1 is generated, and the output of the vibrating beam under the attenuation amplitude A 1 is the attenuation charge C 1 , the change of the charge output by the vibrating beam is used to represent the change of the vibration amplitude of the vibrating beam, and multi-point micro-measurement is carried out on the measured surface Force-tapping scanning enables measurement of the sample surface.
本发明中所采用的PVDF(Polyvinylidene Fluoride)压电薄膜又名聚偏氟乙烯薄膜,是由高分子压电材料制成的压电薄膜,具有优良的压电特性,沿垂直于极化面方向的电常数g31可达0.26V·m/N。PVDF压电薄膜的密度在1.76~1.80g/cm3之间,轻薄柔软,且具有一定弹性,使用温度为-40~150℃;SPM为扫描探针显微镜(Scanning Probe Microscope)。本发明中扫描探头是通过电化学研磨法获得的大长径比的钨针尖。The PVDF (Polyvinylidene Fluoride) piezoelectric film used in the present invention has another name called polyvinylidene fluoride film, is a piezoelectric film made of high molecular piezoelectric material, has excellent piezoelectric properties, along the direction perpendicular to the polarized surface The electrical constant g 31 can reach 0.26V·m/N. The density of the PVDF piezoelectric film is between 1.76 and 1.80g/cm 3 , it is light, thin, soft, and has certain elasticity. The scanning probe in the present invention is a tungsten needle tip with a large aspect ratio obtained by an electrochemical grinding method.
本发明是以聚偏氟乙烯压电薄膜PVDF代替轻敲模式原子力显微镜中的硅材料悬臂,结合扫描隧道显微镜中的钨探针构成扫描探针测头,在这一结构中,具有压电效应的压电薄膜PVDF既作为类似原子力显微镜AFM中带探针的微悬臂使用,又作为类似扫描力显微镜SFM中的力敏传感器以检测微小力或位移的变化。将本发明测头与原子力显微镜测量系统相结合,可实现对各种材料构成的试样(如蛋白质分子等生物材料表面)、具有陡峭台阶表面特征的试样(如半导体硅微器件、微机电设备等)等进行纳米分辨率的非破坏性微观表面形貌测量。The present invention uses polyvinylidene fluoride piezoelectric film PVDF to replace the silicon material cantilever in the tapping mode atomic force microscope, and combines the tungsten probe in the scanning tunneling microscope to form a scanning probe measuring head. In this structure, it has piezoelectric effect The piezoelectric thin film PVDF is used not only as a microcantilever with a probe in an atomic force microscope (AFM), but also as a force-sensitive sensor in a scanning force microscope (SFM) to detect changes in small forces or displacements. Combining the measuring head of the present invention with the atomic force microscope measurement system can realize the detection of samples made of various materials (such as the surface of biological materials such as protein molecules), samples with steep step surface features (such as semiconductor silicon micro-devices, micro-electromechanical devices, etc.) equipment, etc.) for non-destructive microscopic surface topography measurements at nanometer resolution.
与已有技术相比,本发明有益效果体现在:Compared with the prior art, the beneficial effects of the present invention are reflected in:
1、本发明中以压电驱动器励振PVDF压电薄膜振动梁,PVDF压电薄膜振动梁既作为固定扫描探针的悬臂,也作为检测PVDF压电薄膜振动梁振幅变化的传感器,很好地避免了繁杂的附加位置检测装置;1. In the present invention, the piezoelectric driver is used to vibrate the PVDF piezoelectric film vibrating beam, and the PVDF piezoelectric film vibrating beam is used as the cantilever of the fixed scanning probe and also as a sensor for detecting the amplitude change of the PVDF piezoelectric film vibrating beam, so as to avoid The complicated additional position detection device is eliminated;
2、本发明测量过程时PVDF振动梁工作于谐振状态,扫描探针与被测试样的表面瞬间接触,测量力可降低至纳牛(10-9牛顿)量级,可实现对易碎裂损伤的硅微器件和纳米器件的高精度测量,对于轻薄柔软易破损的生物试样的高精度非破坏性测量意义更为重大;2. During the measurement process of the present invention, the PVDF vibrating beam works in a resonant state, and the scanning probe contacts the surface of the sample to be tested instantaneously, and the measurement force can be reduced to the nanonewton (10 -9 Newton) level, which can realize the protection against fragile damage The high-precision measurement of silicon micro-devices and nano-devices is more significant for the high-precision non-destructive measurement of thin, soft and fragile biological samples;
3、本发明采用具有大长径比、尖端圆锥角为10°左右的钨探针为扫描探针,因此特别适合于软材料表面和大台阶表面等的高精度、微测量力的测量。3. The present invention uses a tungsten probe with a large length-to-diameter ratio and a tip cone angle of about 10° as the scanning probe, so it is especially suitable for high-precision and micro-measurement force measurements on soft material surfaces and large-step surfaces.
附图说明 Description of drawings
图1为本发明PVDF薄膜振动梁的原理图。Fig. 1 is a schematic diagram of the PVDF membrane vibrating beam of the present invention.
图2为发明结构示意图。Fig. 2 is a schematic diagram of the structure of the invention.
图3为图2的俯视结构示意图。FIG. 3 is a schematic top view of the structure in FIG. 2 .
图中标号:1测头架、2调节槽、3悬臂梁、4压电驱动器、5左侧压电驱动器驱动线、6振动梁、7扫描探针、8薄膜电荷信号引出线、9右侧压电驱动器驱动线、10夹持结构。Labels in the figure: 1 Probe frame, 2 Adjustment groove, 3 Cantilever beam, 4 Piezoelectric driver, 5 Left piezoelectric driver drive line, 6 Vibration beam, 7 Scanning probe, 8 Film charge signal lead-out line, 9 Right side The piezoelectric driver drives the wire, and 10 clamping structures.
以下通过具体实施方式,并结合附图对本发明作进一说明:Below by way of embodiment, in conjunction with accompanying drawing, the present invention will be further described:
具体实施方式: Detailed ways:
参见图1、图2,本实例是以PVDF压电薄膜为振动梁6、以钨探针为扫描探针7;振动梁6设置为具有弯曲弧度的简支梁,振动梁6的左右两端通过夹持结构10分别固定在相对设置的两侧压电驱动器4的前端,两侧压电驱动器4的后端分别固定在各自的悬臂梁3上,悬臂梁3呈单端悬置设置在测头架1上;扫描探针7固定设置在振动梁6下表面的中心位置上。Referring to Fig. 1 and Fig. 2, in this example, the PVDF piezoelectric film is used as the vibrating beam 6, and the tungsten probe is used as the scanning probe 7; The clamping
测量方法是在两侧压电驱动器4上施加振幅和频率可调的交流正弦电压信号作为驱动信号,在驱动信号下,两侧压电驱动器4沿水平方向产生往返位移,并通过振动梁6使扫描探针7沿垂直方向振动;调整驱动信号频率,使振动梁6处于近共振状态;扫描过程中,在扫描探针7尚未接触到试样表面时,振动梁6工作在近共振状态,产生自由振幅A0,自由振幅A0下的振动梁6的输出为自由振幅电荷量C0;对于扫描探针7在某一点上与试样发生的瞬间接触,振动梁6产生衰减振幅A1,衰减振幅A1下的振动梁的输出为衰减电荷量C1,以振动梁输出的电荷量的改变表征振动梁振幅度的变化,在被测面上进行多点微测力轻敲扫描实现对试样表面的测量。The measurement method is to apply an AC sinusoidal voltage signal with adjustable amplitude and frequency on the piezoelectric actuators 4 on both sides as the driving signal. Under the driving signal, the piezoelectric actuators 4 on both sides generate reciprocating displacement along the horizontal direction, and make The scanning probe 7 vibrates in the vertical direction; the frequency of the driving signal is adjusted so that the vibrating beam 6 is in a near-resonant state; during the scanning process, when the scanning probe 7 has not touched the sample surface, the vibrating beam 6 works in a near-resonant state, resulting in Free amplitude A 0 , the output of the vibration beam 6 under the free amplitude A 0 is the free amplitude charge C 0 ; for the momentary contact between the scanning probe 7 and the sample at a certain point, the vibration beam 6 produces an attenuation amplitude A 1 , The output of the vibrating beam under the attenuation amplitude A 1 is the attenuation charge C 1 , and the change of the vibration amplitude of the vibrating beam is characterized by the change of the output charge of the vibrating beam, and the multi-point micro-force tapping scanning is performed on the measured surface to realize the Measurement of the sample surface.
图2中所示的调节槽2可以用于调整两侧压电驱动器4之间的距离,达到调整PVDF薄膜振动梁所呈弧度大小的目的,左侧压电驱动器引线5和右侧压电驱动器引线9作为压电驱动器驱动信号的输入引线,薄膜电荷信号引出线8作为电荷信号的引出端线。The
关于测头振动频率:About probe vibration frequency:
基于PVDF振动梁的轻敲式扫描测头中,其振动梁结构的原理如图1所示,图中,一层PVDF压电薄膜构成振动梁结构,长度为l。当两端受到挤压和抻拉的力F时就会产生沿X方向的受迫振动。由相关分析得,这种两端固定振动梁结构的振动频率可有下式表达:In the tap scanning probe based on PVDF vibrating beam, the principle of the vibrating beam structure is shown in Figure 1. In the figure, a layer of PVDF piezoelectric film constitutes the vibrating beam structure with a length of l. When the two ends are subjected to the force F of extrusion and stretching, forced vibration along the X direction will occur. According to the correlation analysis, the vibration frequency of this vibrating beam structure with both ends fixed can be expressed by the following formula:
其中,A为PVDF压电薄膜的横截面积;F为加载在压电薄膜左右两端的作用力;l,b,h分别为压电薄膜的长度、宽度和厚度;E为杨氏弹性模量,I为压电薄膜的惯性矩。Among them, A is the cross-sectional area of the PVDF piezoelectric film; F is the force loaded on the left and right ends of the piezoelectric film; l, b, h are the length, width and thickness of the piezoelectric film; E is Young's modulus of elasticity , I is the moment of inertia of the piezoelectric film.
而加载在压电薄膜左右两端作用力F可由下式表达:The force F loaded on the left and right ends of the piezoelectric film can be expressed by the following formula:
F=4πEI/l2 F=4πEI/l 2
那么,PVDF压电薄膜构成的振动梁结构在沿X方向的振动频率就可由下式近似的估算出:Then, the vibration frequency of the vibration beam structure composed of PVDF piezoelectric film along the X direction can be approximated by the following formula:
由上可知,影响振动梁振动频率的因素主要包括:压电薄膜的长度l、宽度b、厚度h以及惯性矩I,其他均为与材料有关的常数。因此,改变压电薄膜的尺寸参数也就改变了振动梁的振动频率。It can be seen from the above that the factors affecting the vibration frequency of the vibrating beam mainly include: the length l, width b, thickness h, and moment of inertia I of the piezoelectric film, and the others are constants related to materials. Therefore, changing the size parameters of the piezoelectric film also changes the vibration frequency of the vibrating beam.
影响测头性能的参数:Parameters affecting probe performance:
衡量SPM测头性能的两个重要参数是测头在垂直方向上所能达到的分辨率,以及测头在扫描试样过程中对试样表面的测量力。而表征这两个性能指标高低的参数主要是振臂弹性常数k及品质因数Q。Two important parameters to measure the performance of the SPM probe are the resolution that the probe can achieve in the vertical direction, and the measuring force of the probe on the surface of the sample during the scanning of the sample. The parameters that characterize the level of these two performance indicators are mainly the elastic constant k of the vibrating arm and the quality factor Q.
机械弹性常数k是指PVDF压电薄膜振动梁6所受的力(也就是在轻敲模式下探针与试样表面瞬间接触时的测量力)与在薄膜振动梁6上产生的弹性变形量的比值,单位为“牛顿/米”。这一比值直接关系到测头的灵敏度的高低、测量力的大小及所产生压电信号电荷数的多少。也就是说当探针在测量时与表面瞬间接触时,机械弹性常数k值越小,很小的测量力就能使压电薄膜振动梁6产生很大的变形,压电薄膜也就能产生足够的电荷量的变化用于检测,因此这样的振动梁灵敏度很高,所需的测量力很小,电荷信号变化幅度大;反之,机械弹性常数k值越大,需要很大的测量力才能使压电薄膜振动梁6产生足够的变形量,才能产生足够的电荷量的变化用于检测,所构成的振动梁灵敏度较低,且对试样的测量力很大,电荷信号的变化也不明显。The mechanical elastic constant k refers to the force on the PVDF piezoelectric film vibrating beam 6 (that is, the measurement force when the probe is in instant contact with the sample surface in tapping mode) and the amount of elastic deformation produced on the film vibrating beam 6 The ratio of , the unit is "Newton/meter". This ratio is directly related to the sensitivity of the probe, the size of the measuring force and the number of charges of the generated piezoelectric signal. That is to say, when the probe is in contact with the surface instantaneously during measurement, the smaller the value of the mechanical elastic constant k, the smaller the measuring force can cause the piezoelectric film vibrating beam 6 to have a large deformation, and the piezoelectric film can also produce Sufficient charge changes are used for detection, so such a vibrating beam has high sensitivity, the required measurement force is small, and the charge signal changes in a large range; on the contrary, the larger the value of the mechanical elastic constant k, the greater the measurement force is required. Only when the piezoelectric thin film vibrating beam 6 has enough deformation can it produce enough charge change for detection, the vibrating beam formed has low sensitivity, and the measurement force on the sample is very large, and the change of the charge signal is also small. obvious.
品质因数Q是反映系统动态性能的一个根本参数。在振动系统中,品质因数Q的定义如下式:The quality factor Q is a fundamental parameter reflecting the dynamic performance of the system. In the vibration system, the quality factor Q is defined as follows:
其中,E为振动系统的总能量;ΔE为振动系统振动一个周期损失的能量;f0为振幅达到最大时的谐振频率;而f1<f0<f2,f1、f2分别为f0两侧0.707倍最大振幅处所对应的振动频率值。这也就是说在一个振动系统中,品质因数表征了系统振动一周期内损失能量的多少,系统阻尼的大小和振动峰值的高度。Among them, E is the total energy of the vibration system; ΔE is the energy lost in one cycle of the vibration system; f 0 is the resonant frequency when the amplitude reaches the maximum; and f 1 <f 0 <f 2 , f 1 and f 2 are respectively f The vibration frequency value corresponding to 0.707 times the maximum amplitude on both sides of 0 . That is to say, in a vibrating system, the quality factor characterizes how much energy is lost during one vibration period of the system, the size of the system damping and the height of the vibration peak.
对于上述测头,品质因数Q的大小主要影响以下三个方面性能:即轻敲扫描过程中PVDF薄膜振动梁6所能达到的共振幅值大小;探针与表面发生瞬间接触前后,振动梁6振幅改变量的大小;振动梁6回复到稳定振动状态所需时间的长短。也就是品质因数越高,相同接触力的情况下,薄膜振动梁6振幅的改变量越大,力灵敏度越高,但回复到稳定状态所需的时间越长;反之,则振幅的改变量较小,力灵敏度较低,却较易维持稳定的振动状态。For the above measuring head, the quality factor Q mainly affects the performance of the following three aspects: namely, the resonance amplitude that the PVDF film vibrating beam 6 can achieve during the tap scanning process; The magnitude of the amplitude change; the length of time required for the vibration beam 6 to return to a stable vibration state. That is, the higher the quality factor, the greater the change in the amplitude of the thin-film vibrating beam 6 under the same contact force, and the higher the force sensitivity, but the longer it takes to return to a stable state; otherwise, the change in the amplitude is smaller. Small, the force sensitivity is low, but it is easier to maintain a stable vibration state.
因此,为了使系统具有较高的分辨率和较小的测力,就要合理调整对Q和k产生影响的各结构参数。Therefore, in order to make the system have higher resolution and smaller force, it is necessary to adjust the structural parameters that affect Q and k reasonably.
确定好PVDF薄膜各结构参数并架构好整个系统后,就可以实际测试这一测头结构所能达到的灵敏度。测试是通过以下方式实现:控制纳米位移台沿垂直方向移动,以一定的步进量(如1nm)不断向钨探针7逼近,当探针7在某一点上与纳米位移台发生瞬间接触时,薄膜振动梁6的振幅就会衰减。由于薄膜振幅的减小,PVDF压电薄膜所产生的电荷量也会相应的减少,检测电路的检测出的电压信号的幅值也会随之减小。通过记录下来的发生触碰时的步进量以及电压信号的减小量,就可以算得这一测头结构的灵敏度,其单位为V/μm。灵敏度越高,表征着由这一测头结构所搭建的SPM扫描探针显微镜系统所能达到的垂直方向的空间分辨率越高;反之,则所能达到的分辨率就较低。另外,灵敏度测试也可用来验证所选薄膜各参数是否恰当。After determining the structural parameters of the PVDF film and building the entire system, the sensitivity that this probe structure can achieve can be actually tested. The test is realized by the following method: control the nano-transition stage to move in the vertical direction, and continuously approach the tungsten probe 7 with a certain step amount (such as 1nm), when the probe 7 is in instantaneous contact with the nano-transition stage at a certain point , the vibration amplitude of the thin film vibrating beam 6 will attenuate. Due to the reduction of the amplitude of the film, the amount of charge generated by the PVDF piezoelectric film will also decrease accordingly, and the amplitude of the voltage signal detected by the detection circuit will also decrease accordingly. The sensitivity of the probe structure can be calculated by recording the step amount and the decrease amount of the voltage signal when the touch occurs, and the unit is V/μm. The higher the sensitivity, the higher the spatial resolution in the vertical direction that can be achieved by the SPM scanning probe microscope system built by this probe structure; otherwise, the lower resolution can be achieved. In addition, sensitivity testing can also be used to verify whether the parameters of the selected film are appropriate.
实验数据:Experimental data:
在实验测定中,通过改变PVDF薄膜振动梁6结构参数如薄膜的长度l、宽度b和厚度h以及振动梁6所呈弧度实测这种新型测头所能达到的性能,振动梁6所呈的弧度可以通过调节槽2调整两侧压电驱动器4的之间的距离D来实现。In the experimental measurement, by changing the structural parameters of the PVDF film vibrating beam 6 such as the length l, width b and thickness h of the film and the radian of the vibrating beam 6, the performance that this new type of measuring head can achieve is measured. The vibrating beam 6 presents The radian can be realized by adjusting the distance D between the piezoelectric actuators 4 on both sides by adjusting the
由实验结果确定的压电薄膜的结构尺寸为:l=10mm,b=2.5mm,h=40μm,振动梁所呈弧度在夹持结构10间距D=9.5mm时为最佳。测头的品质因数Q为24.3,弹性常数k为35N/m。The structural dimensions of the piezoelectric film determined from the experimental results are: l=10mm, b=2.5mm, h=40μm, and the radian of the vibrating beam is optimal when the distance between the clamping
其中,品质因数Q要远低于AFM测头的品质因数(通常为数千),这是与这一新型测头的结构及大气下的工作环境有关,造成了振动系统的阻尼较大,系统振动损失的能量也大。但在保证了足够的灵敏度的情况下,较低的Q值却能保证系统振动的稳定,缩短回复稳定状态的时间,这样就可以提高扫描速度和工作效率;而振动梁的机械弹性常数k为35N/m,要远小于硅微悬臂数百牛顿/米的弹性常数,也就提高了这一新型测头的灵敏度,且对试样表面具有更轻微的测量力。Among them, the quality factor Q is much lower than the quality factor of the AFM probe (usually thousands), which is related to the structure of this new probe and the working environment under the atmosphere, resulting in a large damping of the vibration system, and the system The energy lost by vibration is also large. But in the case of ensuring sufficient sensitivity, the lower Q value can ensure the stability of the system vibration and shorten the time to return to the stable state, so that the scanning speed and work efficiency can be improved; and the mechanical elastic constant k of the vibrating beam is 35N/m, which is much smaller than the elastic constant of hundreds of N/m of the silicon microcantilever, which improves the sensitivity of this new type of measuring head and has a lighter measurement force on the surface of the sample.
经实验测定,由此测头构成的扫描探针显微系统,灵敏度为1.98V/μm,自由振动的振幅为150~200nm,垂直分辨率达1.6nm,扫描测量力为nN级。It is determined by experiments that the scanning probe microscope system composed of this measuring head has a sensitivity of 1.98V/μm, a free vibration amplitude of 150-200nm, a vertical resolution of 1.6nm, and a scanning measurement force of nN level.
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CN109555006A (en) * | 2018-10-29 | 2019-04-02 | 山东理工大学 | Control beam spring vibration absorber and control method |
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CN102538657B (en) * | 2011-12-30 | 2014-12-03 | 合肥工业大学 | Three-dimensional resonance trigger measuring head based on PVDF (polyvinylidene fluoride) and three-dimensional resonance trigger positioning method |
CN109555006A (en) * | 2018-10-29 | 2019-04-02 | 山东理工大学 | Control beam spring vibration absorber and control method |
CN109555006B (en) * | 2018-10-29 | 2020-10-02 | 山东理工大学 | Beam spring vibration damper |
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