CN101391864A - 基板热处理炉 - Google Patents
基板热处理炉 Download PDFInfo
- Publication number
- CN101391864A CN101391864A CNA2008101490055A CN200810149005A CN101391864A CN 101391864 A CN101391864 A CN 101391864A CN A2008101490055 A CNA2008101490055 A CN A2008101490055A CN 200810149005 A CN200810149005 A CN 200810149005A CN 101391864 A CN101391864 A CN 101391864A
- Authority
- CN
- China
- Prior art keywords
- heat treatment
- hot blast
- plate heat
- basal plate
- treatment furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 77
- 239000003054 catalyst Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000001179 sorption measurement Methods 0.000 claims description 41
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 20
- 238000007599 discharging Methods 0.000 claims description 15
- 239000011941 photocatalyst Substances 0.000 claims description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 29
- 238000000354 decomposition reaction Methods 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000005416 organic matter Substances 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 239000011146 organic particle Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 64
- 238000010304 firing Methods 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 235000011089 carbon dioxide Nutrition 0.000 description 12
- 238000011144 upstream manufacturing Methods 0.000 description 9
- 238000013022 venting Methods 0.000 description 9
- 230000008929 regeneration Effects 0.000 description 7
- 238000011069 regeneration method Methods 0.000 description 7
- 230000001105 regulatory effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000000274 adsorptive effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000002594 sorbent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229910018967 Pt—Rh Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007242576 | 2007-09-19 | ||
JP2007242576A JP4550098B2 (ja) | 2007-09-19 | 2007-09-19 | 基板熱処理炉 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101391864A true CN101391864A (zh) | 2009-03-25 |
Family
ID=40492404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101490055A Pending CN101391864A (zh) | 2007-09-19 | 2008-09-18 | 基板热处理炉 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4550098B2 (zh) |
KR (1) | KR101011327B1 (zh) |
CN (1) | CN101391864A (zh) |
TW (1) | TW200930966A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077999A (zh) * | 2011-10-25 | 2013-05-01 | 茂迪股份有限公司 | 热处理设备及过温保护监控方法 |
CN106647173A (zh) * | 2017-02-24 | 2017-05-10 | 武汉华星光电技术有限公司 | 烘烤设备 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102071558B1 (ko) * | 2014-07-23 | 2020-01-30 | 주식회사 제우스 | 기판 처리 장치와 기판 처리 방법 |
CN105127140B (zh) * | 2015-08-28 | 2017-03-22 | 武汉华星光电技术有限公司 | 用于玻璃基板的清洗设备 |
JP6868163B2 (ja) * | 2017-04-04 | 2021-05-12 | 進 中谷 | 検査用熱処理炉を備えた検査装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10225610A (ja) * | 1997-02-17 | 1998-08-25 | Kawasaki Steel Corp | 吸着塔の再生方法及び再生装置 |
JP2001201271A (ja) * | 2000-01-24 | 2001-07-27 | Shinko Mex Co Ltd | 銅の縦型溶解炉における排ガス処理システム |
JP3927359B2 (ja) | 2000-08-12 | 2007-06-06 | 秋史 西脇 | 排ガス処理装置 |
JP4402846B2 (ja) * | 2001-02-20 | 2010-01-20 | 中外炉工業株式会社 | 平面ガラス基板用連続式焼成炉 |
JP2004206983A (ja) * | 2002-12-25 | 2004-07-22 | Pioneer Electronic Corp | プラズマディスプレイパネルの製造方法及び熱処理装置 |
JP2004333062A (ja) * | 2003-05-09 | 2004-11-25 | Fujikura Ltd | 光触媒担持型加熱炉 |
JP2005071632A (ja) * | 2003-08-25 | 2005-03-17 | Fujitsu Hitachi Plasma Display Ltd | プラズマディスプレイパネルの製造方法及びその装置 |
JP4291832B2 (ja) * | 2006-06-23 | 2009-07-08 | 株式会社フューチャービジョン | 基板焼成炉の給排気システム |
JP4331784B2 (ja) * | 2008-07-22 | 2009-09-16 | 株式会社フューチャービジョン | 基板焼成炉の給排気方法 |
-
2007
- 2007-09-19 JP JP2007242576A patent/JP4550098B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-08 KR KR1020080088110A patent/KR101011327B1/ko not_active IP Right Cessation
- 2008-09-11 TW TW097134916A patent/TW200930966A/zh unknown
- 2008-09-18 CN CNA2008101490055A patent/CN101391864A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077999A (zh) * | 2011-10-25 | 2013-05-01 | 茂迪股份有限公司 | 热处理设备及过温保护监控方法 |
CN103077999B (zh) * | 2011-10-25 | 2015-05-27 | 茂迪股份有限公司 | 热处理设备及过温保护监控方法 |
CN106647173A (zh) * | 2017-02-24 | 2017-05-10 | 武汉华星光电技术有限公司 | 烘烤设备 |
Also Published As
Publication number | Publication date |
---|---|
KR101011327B1 (ko) | 2011-01-28 |
JP4550098B2 (ja) | 2010-09-22 |
TW200930966A (en) | 2009-07-16 |
JP2009074724A (ja) | 2009-04-09 |
KR20090030213A (ko) | 2009-03-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUTURE VISION KK Free format text: FORMER OWNER: TOKOKU UNIV. Effective date: 20101119 Free format text: FORMER OWNER: FUTURE VISION KK |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: SENDAI CITY, MIYAGI, JAPAN TO: TOKYO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20101119 Address after: Tokyo, Japan, Japan Applicant after: Future Vision KK Address before: Sendai City, Miyagi Prefecture, Japan Applicant before: Tokoku University of National University Corp. Co-applicant before: Future Vision KK |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090325 |