CN101361158B - Ion sources, systems and methods - Google Patents

Abstract

Ion sources, systems and methods are disclosed.

Description

Ion source, system and method

Technical field

The disclosure relates to ion source, system and method.

Background technology

Ion can use such as liquid metal ion source or gas field ion source and be formed.In some instances, the ion formed by ion source can be used in some characteristic of the sample determining to be exposed to ion, or amendment sample.In additional examples, the ion formed by ion source can be used in some characteristic determining ion source self.

Summary of the invention

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce the ion beam on the surface of sample with the spot size of the size of 10nm or less.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce the ion beam on the surface of sample with the spot size of the size of 3nm or less.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce and have 1 × 10 on the surface of sample ⁹a/cm ²the ion beam of the brightness of sr or larger.

In in other, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce the surface had at sample and have 5 × 10 ⁸a/m ²the ion beam of the brightness of the reduction of srV or larger.

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce and have 5 × 10 on the surface of sample ^-21cm ²the ion beam of the etendue of sr or less.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source can interact with gas thus produce and have 1 × 10 on the surface of sample ^-16cm ²the ion beam of the etendue of the reduction of srV or less.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source comprises conductive tip.Gas field ion source can interact with gas thus produce ion beam one week or longer cycle and do not remove conductive tip from system.

In in other, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce ion beam one week or longer cycle with 10 hours or less total outage time.

In one aspect, of the present inventionly a kind of ion microscope that can produce the image of sample is characterized as.Sample is different from ion microscope, and the image of sample has the resolution of 3nm or less.

In another aspect, of the present inventionly a kind of ion microscope that can produce the image of sample is characterized as.Sample is different from ion microscope, and the image of sample has the resolution of 10nm or less.

In in another, be of the present inventionly characterized as a kind of gas field ion microscope with the quality factor of 0.25 or larger.

In in other, be of the present inventionly characterized as a kind of ion microscope with the damage test value of 25nm or less.

In one aspect, be of the present inventionly characterized as a kind of ion microscope, described ion microscope comprises the ion source of the conductive tip with 20 or less end layer (terminal shelf) atom.

In another aspect, be of the present inventionly characterized as a kind of system, described system comprises the gas field ion source of the conductive tip had from the average cone direction of 15 ° to 45 °.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, described gas field ion source has conductive tip, and this conductive tip has the mean radius of curvature of 200nm or less.

In in other, be of the present inventionly characterized as a kind of gas field ion source comprising the conductive tip with one or more end layer atoms.System is configured, make between the operating period of system, one or more atoms and gas interact thus produce ion beam, and in the ion beam arriving sample surfaces 70% or more ion by gas only with an atomic interaction of one or more atom and producing.

In one aspect, be of the present inventionly characterized as a kind of system, described system comprises the gas field ion source having and can interact with gas thus produce the conductive tip of ion beam.Described system also comprises the ion optics be configured, and makes during use, and at least part of ion beam is through ion optics.System also comprises the travel mechanism be coupled with gas field ion source and makes travel mechanism can translation conductive tip, inclination conductive tip or both.

In another aspect, be of the present inventionly characterized as a kind of system, described system comprises the ion source that can interact with gas to produce ion beam, and ion beam can interact with sample thus cause the particle of number of different types to leave sample.System also comprises at least one detector of being configured to detect the particle of at least two types of the particle of number of different types.The particle of number of different types is selected from secondary electron, Auger (Auger) electronics, secondary ion, secondary neutral particle, neutral particle, scattered ion(s) and a photon.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause particle to leave sample.Particle is selected from auger electrons, secondary ion, secondary neutral particle, neutral particle, scattering particles and a photon.System also comprises at least one detector be configured, and makes during use, and this at least one detector detection at least some particle is to determine the information of sample.

In in other, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause particle to leave sample.System also comprises at least one detector be configured, and makes during use, and this at least one detector can detect at least some particle.Be detected particle for given, this at least one detector produces signal according to the given energy being detected particle.

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause particle to leave sample.System also comprises at least one detector be configured, and makes during use, and this at least one detector can detect at least some particle.For the given particle be detected, this at least one detector produces signal according to the angle of the track of the given particle be detected.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause scattered ion(s) to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some scattered ion(s).System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the scattered ion(s) be detected process information, to determine the information of sample.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause a neutral particle to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some neutral particle.System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the neutral particle be detected process information, to determine the information of sample.

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause photon to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some photon.System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the photon be detected process information, to determine the information of sample.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause secondary ion to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some secondary ion.System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the secondary ion be detected process information, to determine the information of sample.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause secondary neutral particle to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some secondary neutral particle.System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the secondary neutral particle be detected process information, to determine the information of sample.

In in other, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause auger electrons to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect at least some auger electrons.System also comprises the electronic processors being electrically connected at least one detector, makes during use, electronic processors can according to the auger electrons be detected process information, to determine the information of sample.

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause ion to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect ion.The interaction of ion beam and sample can cause secondary electron to leave sample, and when the interaction of ion beam and sample causes secondary electron to leave sample, at least one detector can detect at least some ion and not detect secondary electron.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause neutral particle to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detect neutral particle.The interaction of ion beam and sample can cause secondary electron to leave sample, and when the interaction of ion beam and sample causes secondary electron to leave sample, at least one detector can detect at least some neutral particle and not detect secondary electron.

In in another, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce can ion beam interactional with sample, to cause photon to leave sample.System also comprises at least one detector be configured, and makes during use, and at least one detector can detection of photons.The interaction of ion beam and sample can cause secondary electron to leave sample, and when the interaction of ion beam and sample causes secondary electron to leave sample, at least one detector can detect at least some photon and not detect secondary electron.

In one aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce the ion beam of the spot size of the size with 10nm or less on the surface of the samples.System also comprises the ion optics that is configured so that the surface of the sample that led by ion beam, and ion optics has at least one adjustable setting.When the setting of adjustable ion optics be first arrange time, the primary importance of ion beam and sample interacts.When the setting of adjustable ion optics be second arrange time, the second place of ion beam and sample interacts.First of ion optics arranges and arranges different from second of ion optics, and the primary importance of sample is different from the second place of sample.

In another aspect, be of the present inventionly characterized as a kind of system comprising gas field ion source, gas field ion source can interact with gas thus produce the ion beam being directed to sample.System also comprises the charged particle source be configured, and makes during use, and charged particle source provides the charged particle beam of guiding sample.Gas field ion source is different from charged particle source.

In in another, be of the present inventionly characterized as a kind of method, described method comprises to be made ion beam and sample interact thus causes the particle of number of different types to leave sample, and detects at least two type particles of the particle of number of different types.The particle of number of different types is selected from secondary electron, auger electrons, offspring, secondary neutral particle, neutral particle, scattered ion(s) and a photon.

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce ion beam, and interacts ion beam and sample to cause particle to leave sample.Particle is selected from auger electrons, secondary ion, secondary neutral particle, neutral particle, scattered ion(s) and a photon.Described method also comprises detection at least some particle to determine the information of sample.

In one aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and interacts ion beam and sample to cause particle to leave sample.Described method is also comprised the energy according to the particle detected by detector and produces signal from detector.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and interacts ion beam and sample to cause particle to leave sample.Described method is also comprised the angle according to the track of the particle detected by detector and produces signal from detector.

In in another, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and interacts ion beam and sample to cause scattered ion(s) to leave sample.Described method also comprises detection at least some scattered ion(s), and determines the information of sample according to detected scattered ion(s).

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause a neutral ion to leave sample.Described method also comprises detection at least some neutral particle, and determines the information of sample according to detected neutral particle.

In one aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause photon to leave sample.Described method also comprises detection at least some photon, and determines the information of sample according to detected photon.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause secondary ion to leave sample.Described method also comprises detection at least some secondary ion.

In in another, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause secondary neutral particle to leave sample.Described method also comprises detection at least some secondary neutral particle or derives from the particle of described secondary neutral particle.

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause auger electrons to leave sample.Described method also comprises detection at least some auger electrons.

In one aspect, be of the present inventionly characterized as a kind of method, described method comprises and forms gas field ion source, and, after formation gas field ion source, described ion source is arranged in chamber, to provide gas field ion system.

In another aspect, form the ion source with emission shaft, and after formation ion source, ionogenic emission shaft is aimed at the incident axle of ion-optic system.

In in another, of the present inventionly be characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce ion beam, ion beam has the spot size of the size of 10nm or less on the surface of the samples, and the second place moved to from the primary importance sample surfaces by ion beam on sample surfaces, primary importance is different from the second place.

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce ion beam, and by sample and ion beam contacts.Described method also comprises and being contacted with the charged particle beam from charged particle source by sample.

In one aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause particle to leave sample.Described method also comprises detection at least some particle, and determines the information of the crystallization of sample according to detected particle.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and causes voltage in a part for sample.Described method also comprises particle detection thus determines the voltage contrast information of sample.

In in another, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause particle to leave sample.Sample comprises at least the first material and the second material.Described method also comprises distinguishes the first and second materials according to particle.

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and active gases is interacted, to promote the chemical reaction at sample surfaces.

In one aspect, of the present inventionly be characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and uses the sub-surface information of ion beam determination semiconductor article (semiconductor article).Described method also comprises according to sub-surface information amendment semiconductor article.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and uses the information of ion beam determination semiconductor article.Ion beam has 10nm or less spot size on the surface of semiconductor article.Described method also comprises according to described information amendment semiconductor article.

In in another, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and uses ion beam to determine the information of mask.Ion beam has 10nm or less spot size on the surface of semiconductor article.Described method also comprises repairs mask according to described information.

In in other, be of the present inventionly characterized as a kind of method, described method comprises the resist used on ion beam composition sample.Ion beam has 10nm or less spot size on sample.

In one aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and the sample comprising a feature is interacted.Ion beam has 50nm or less spot size on the surface of sample.Described method also comprises the size determining this feature.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being reacted and produce ion beam, and ion beam and sample is interacted, to cause particle to leave sample.Sample has the many laminations comprising first and second layers.Described method also comprises particle detection to determine whether the second layer is aimed at ground floor.

In in another, be of the present inventionly characterized as a kind of method, described method comprises exposed sample in focused ion beam, and by gas and gas field ion source are interacted and produces the second ion beam.Described method also comprises exposed sample in the second ion beam.

In in other, be of the present inventionly characterized as a kind of method, described method comprises when gas field ion source is present in ion microscope, forms the conductive tip of gas field.

In one aspect, the one that is characterized as of the present invention comprises ionogenic system.System can imaging ion source in a first mode, and system can use ion source to collect the image of sample in a second mode.Sample is different from ion source.

In another aspect, be of the present inventionly characterized as a kind of sample manipulator, described sample manipulator comprise shell, support by shell dish, coiled the component that supports, component has pillar and is configured to support the surface of sample, and device.Described device contact member thus mobile example in a first mode, and in a second mode device not with member contact.

In in other, be of the present inventionly characterized as a kind of system, described system comprises gas field ion source and sample manipulator.Sample manipulator comprise shell, support by shell dish, coiled the component that supports, component has pillar and is configured to support the surface of sample, and device.Device contact member thus mobile example in a first mode, and in a second mode device not with member contact.

In one aspect, of the present inventionly be characterized as a kind of method, described method comprises producing by gas and gas field ion source being interacted and comprises first of ion and restraint, and removes the charged chemical species of non-list from the first bundle thus formed and comprise electro-ionic second bundle of single lotus.

In in other, be of the present inventionly characterized as a kind of system, described system comprises and can interact to produce the gas field ion source of restrainting with gas, and described bundle comprises the chemical species comprising charged chemical species.System also comprises at least one electrode be biased, described in the electrode that is biased be configured to cause the beam path of intrafascicular chemical species to disperse according to the electric charge of chemical species.

In another aspect, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce ion, and uses ion sputtering sample.

In in another, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce ion beam, and uses the system different from gas field ion source to produce electron beam.Described method also comprises and uses ion beam and electron beam to investigate sample.

In another aspect, be of the present inventionly characterized as a kind of system, described system comprises the scanning electron microscopy that can provide electron beam.Described system also comprises and can interact with gas thus produce the gas field ion source of ion beam.Scanning electron microscopy and gas field ion microscope are located, and make during use, and electron beam and ion beam can both be used for investigating sample.

In in other, be of the present inventionly characterized as a kind of method, described method comprises by gas and gas field ion source being interacted and produce the first ion beam.First ion beam has first-class.Described method also comprises use and has first first ion beam, so that for the preparation of the gas field ion source investigating sample.Described method also comprises by gas and gas field ion source being interacted and produce the second ion beam.Second ion beam has second.In addition, described method comprises use second ion beam investigation sample.

Embodiment can comprise one or more following advantage.

In certain embodiments, ion source (such as gas field ion source) can provide relatively little spot size on the surface of the samples.Use so ionogenic ion microscope (such as gas field ion microscope) passable, such as, obtain the image with the sample of relatively high resolution.

In certain embodiments, ion source (such as gas field ion source) can have the brightness of relatively high brightness and/or relatively high reduction.Use so ionogenic ion microscope (such as gas field ion microscope) passable, such as, within the relatively short time, obtain the good picture quality of sample, this can increase again can the speed of a large amount of sample of imaging.

In certain embodiments, ion source (such as gas field ion source) can have relatively high brightness for given ion current (such as relatively low etendue).Use so ionogenic ion microscope (such as gas field ion microscope) passable, such as, obtain the picture quality of good sample with the relatively few damage for sample.

In certain embodiments, gas field ion microscope can have relatively high reliability.Thus, such as, gas field ion source can be used to the period of expansion and not replace gas field ion source, this is passable, and such as, increasing can the speed of a large amount of sample of imaging, reduce the idle hours relevant to a large amount of sample of imaging, and/or reduce in the relevant cost of a large amount of sample of imaging.

In certain embodiments, ion microscope (such as gas field ion microscope) is configured, make vibration by substantially from ion source by decoupling zero.This can improve the ability of ion microscope, to realize one or more above-mentioned advantages.

In certain embodiments, ion microscope (such as gas field ion microscope) can operate at relatively high temperature and still provide one or more above-mentioned advantages.Such as, liquid nitrogen can be used as the cooling agent of ion microscope.This can reduce the cost relevant to using some other cooling agent such as liquid helium and/or complexity.This can also reduce the potential problems relevant to some mechanical system that can produce the employing liquid helium coolant significantly vibrated.

From specification, drawings and the claims, other features and advantages of the present invention will be obvious.

Embodiment

General introduction

Ion can be produced and in the imaging of sample and the application of other microscopic system.The microscopic system that the use that may be used in sample analysis (such as imaging) produces the gas field ion source of ion is called as gas field ion microscope.Gas field ion source is a kind of device comprising conductive tip (typically having the summit of 10 or less atom), apply the summit of high normal potential (such as relative to extractor (discussion see below) 1kV or larger) to conductive tip by neutral gas nucleic being carried into (such as in the distance of about 4 to 5 dusts) near conductive tip, this conductive tip may be used for ionization neutral gas nucleic thus produces ion (such as with the form of ion beam) simultaneously.

Fig. 1 shows the schematic diagram of gas field ion microscope system 100, gas field ion microscope system 100 is comprised gas source 110, gas field ion source 120, ion optics 130, sample manipulator 140, front side detector 150, rear side detector 160 and is electrically connected to the electronic control system 170 (such as electronic processors, such as computer) of various elements of system 100 by connection 172a-172f.Sample 180 is located in the sample manipulator 140 between ion optics 130 and detector 150,160/on.During use, ion beam 192 is directed to the surface 181 of sample 180 through ion optics 130, and is measured from ion beam 192 and the particle 194 that the interaction of sample 180 produces by detector 150 and/or 160.

Usually, the existence being reduced some less desirable chemical species within system 100 by this system emptying is expected.Typically, under the different element of system 100 is maintained at different background pressures.Such as, gas field ion source 120 can be maintained at about 10 ^-10under the pressure of Torr.When gas is introduced into gas field ion source 120, background pressure is raised to about 10 ^-5torr.Ion optics 130 was maintained at about 10 before gas is introduced gas field ion source 120 ^-8under the background pressure of Torr.When gas is introduced into, the background pressure in ion optics 130 is typically increased to about 10 ^-7torr.Sample 180 is located in and typically remains on about 10 ^-6in the chamber of the background pressure of Torr.This pressure not due in gas field ion source 120 gas presence or absence and change significantly.

As shown in Figure 2, gas source 110 is configured, to provide one or more gas 182 to gas field ion sources 120.Described in detail as follows, gas source 110 can be configured, to provide gas with various purity, flow, pressure and temperature.Usually, the gas provided by gas source 110 be one of at least inert gas (helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)), and the ion of inert gas is desirably main component in ion beam 192.Usually, measured by the surface at sample 180, along with the pressure of the inert gas in system 110 increases, the ion current in ion beam 192 increases monotonously.In certain embodiments, this relation can described by exponential law, and for the certain pressure scope of inert gas, stream increases in the ratio of gas pressure usually.During operation, the pressure of inert gas is adjacent to tip (discussion see below) typically 10 ^-2torr or less (such as 10 ^-3torr or less, 10 ^-4torr or less), and/or 10 ^-7torr or larger (such as 10 ^-6torr or larger, 10 ^-5torr or larger).Usually, expect to use relatively highly purified gas (such as, in order to the existence of chemical species less desirable in reduction system).For example, when using helium, helium can be at least 99.99% pure (such as, 99.995% pure, 99.999% pure, 99.9995% pure, 99.9999% pure).Similarly, when using other inert gas (Ne gas, Ar gas, Kr gas, Xe gas), the purity of gas is contemplated to be highly purified commercial grade.

Optionally, except inert gas, gas source 110 can also provide one or more gas.As discussed in more detail below, the example of such gas is nitrogen.Typically when the gas added can exist with the level more than impurity in inert gas, the gas of interpolation still forms the minority composition of the overall gas mixture introduced by gas source 110.For example, He gas and Ne gas are introduced in the embodiment in gas field ion source 120 by gas source 110 wherein, overall gas mixture can comprise 20% or less (such as 15% or less, 12% or less) Ne, and/or the Ne of 1% or more (such as 3% or more, 8% or more).Such as, in the embodiment that He gas and Ne gas are introduced into by gas source 110 wherein, overall gas mixture can comprise the Ne of 5% to 15% (such as from 8% to 12%, from 9% to 11%).As another example, in the embodiment that He gas and nitrogen are introduced into by gas source 110 wherein, overall gas mixture can comprise 1% or less (such as 0.5% or less, 0.1% or less) nitrogen, and/or the nitrogen of 0.01% or more (such as 0.05% or more).Such as, in the embodiment that He gas and nitrogen are introduced into by gas source 110 wherein, overall gas mixture can comprise the nitrogen of 0.01% to 1% (such as from 0.05% to 0.5%, from 0.08% to 0.12%).In certain embodiments, (multiple) gas added mixed (such as before the system of entering 100 with inert gas, by use gas manifold, this gas manifold mist and import mixture into system 100 by single entrance subsequently).In certain embodiments, (multiple) gas added did not mix (such as before the system of entering 100 with inert gas, independent entrance be used for by each gas feeding system 100, but independent entrance enough close to make any element in described gas and gas field ion source 120 interact before just become mixed).

Gas field ion source 120 is configured, to receive one or more gas 182 from gas source 110 and to produce gas ion from gas 182.Gas field ion source 120 comprises conductive tip 186, extractor 190 and the optionally inhibitor 188 with tip 187.Typically, 5cm or longer (such as 10cm or longer from the distance (not shown in fig. 2) on the surface 181 of tip 187 to sample 180,15cm or longer, 20cm or longer, 25cm or longer), and/or 100cm or shorter (such as 80cm or shorter, 60cm or shorter, 50cm or shorter).Such as, in certain embodiments, from the distance on the surface 181 of tip 187 to sample 180 are (such as from 25cm to 75cm, from 40cm to 60cm, from 45cm to 55cm) from 5cm to 100cm.

Conductive tip 186 can be formed by various material.In certain embodiments, most advanced and sophisticated 186 by metal (such as, tungsten (W), tantalum (Ta), iridium (Ir), lawrencium (Rh), niobium (Nb), platinum (Pt), molybdenum (Mo)) formed.In certain embodiments, conductive tip 186 can be formed by alloy.In certain embodiments, conductive tip 186 can be formed by different materials (such as, carbon (C)).

During use, most advanced and sophisticated 186 are positively biased (such as about 20kV) relative to extractor 190, extractor 190 is relative to externally biased (such as by negative or positive, from-20kV to+50kV), and optionally inhibitor 188 is biased (such as from-5kV to+5kV) by plus or minus relative to most advanced and sophisticated 186.Because most advanced and sophisticated 186 are formed by electric conducting material, so the electric field at the tip 186 of tip 187 is from the surface sensing of tip 187.Due to the shape of most advanced and sophisticated 186, electric field is the strongest near tip 187.The electric field strength of most advanced and sophisticated 186 can be adjusted, such as, by changing the positive voltage being applied to most advanced and sophisticated 186.Adopt this configuration, the not ionizable gas atom 182 provided from gas source 110 is ionized and becomes charged ion near tip 187.This charged ion repelled by charged most advanced and sophisticated 186 simultaneously and attract by load electricity extractor 190, make charged ion be imported into ion optics 130 as ion beam 192 from most advanced and sophisticated 186.The auxiliary overall electric field controlled between most advanced and sophisticated 186 and extractor 190 of inhibitor 188, and thus control the track of charged ion from most advanced and sophisticated 186 to ion optics 130, in a word, total electric field between most advanced and sophisticated 186 and extractor 190 can be adjusted, to control the speed producing charged ion in tip 187, and charged ion is transported to the efficiency of ion optics 130 from most advanced and sophisticated 186.

For example, be undesirably bound by theory, think that He ion can produce as follows.Gas field ion source 120 is configured, and makes the electric field at the tip 186 near tip 187 exceed the ionized electric field of not ionizable He gas atom 182, and most advanced and sophisticated 186 be maintained at relatively low temperature under.When not ionizable He gas atom 182 closely tip 187 time, He atom can polarize by the electric field at tip, between He atom 182 and tip 187, produce weak attraction.As a result, He atom 182 can contact tip summit 187 and keep constraint (such as physisorption) some times to it.Near tip 187, electric field is high enough to ionization and is adsorbed to He atom in tip 187, produces charged He ion (such as with the form of ion beam).

Fig. 3 is the illustrative diagram of tip 187 (formed by W (111), see discussion below).Tip 187 comprises the layer being positioned to and forming atom frame.Terminal atom frame is formed by atom 142.Second atom frame is formed by atom 144, and the 3rd atom frame is formed by atom 146.The neutral gas atoms 182 that transmits by gas source 110 be present near tip 187.Atom 182 is polarized due to the electric field of tip 187, and experience causes atom 182 to the relatively weak attraction of tip 187 movement, indicated by the arrow on atom 182.

According to the intensity of the electric field at tip, corresponding ionization dish 148 can be had close to each atom in the atom frame of tip 187.Ionization dish 148 is space region, and the neutral He atom wherein swarmed into wherein has the Ionized high probability of experience.Typically, the ionization of neutral He atom is occurred by the electron tunnel from neutral He atom to tip atom.Thus ionization dish 148 represents the space region that wherein He ion produces, and from this district, He ion occurs.

The size of the ionization dish 148 of concrete tip atom depends on the shape of tip 187 and puts on the current potential of tip 187.Usually, the ionization of He atom can come across in the space region adjacent to tip 187 of internal field more than the ionization potential of He atom.Thus, for the large current potential putting on tip 187, many sophisticated atomic will have ionization dish.In addition, the shape of tip 187 is depended in the internal field near tip 187.For relatively sharp-pointed tip, the internal field near tip 187 will be relatively high.For relatively blunt tip, internal field, both just also less near tip 187.

Ionization dish 148 corresponding to the single atom of tip 187 is spatially separated from each other in figure 3.In certain embodiments, if the electric field of tip 187 is enough large, then from can be spatially overlapping more than monatomic ionization dish (such as atom 142), produce the larger ionization dish of the space region striden across closest to multiple tip atom.By reducing the electric field of tip 187, the volume in the space occupied by ionization dish 148 can be reduced, and the geometry that can realize described in Fig. 3, in described geometry, several tip atom has its oneself independent, that space is separated ionization dish respectively.Because in many situations, the shape of tip 187 is not easy to be changed between the operating period of ion source 120, so the electric field near tip 187 is controlled typically via adjustment puts on the current potential of tip 187.

By reducing the current potential putting on tip 187 further, some the ionization dishes in Fig. 3 can be eliminated.Such as, tip 187 is so not sharp-pointed near the second atom frame atom 144, and by reducing the current potential putting on tip 187, the electric field of the tip 187 near atom 144 can be reduced, and makes the ionization of He atom not occur with high probability in these districts.As a result, the ionization dish corresponding to atom 144 no longer exists.But the electric field of the tip 187 near end layer atom 142 can still be high enough to cause He atomizing/ionizing, and the ionization dish 148 thus corresponding to atom 142 retains.By carefully controlling the current potential putting on tip 187, ion source 120 can work, and the ionization only corresponding to end layer atom 142 is taken inventory, and the ionization dish corresponding to end layer atom is spatially separated from each other.As a result, near tip 187, ionizable He atom is produced by the ionization near specific end layer atom.

Neutral He atom is stayed in ionization dish 148 longer, has the Ionized probability of higher experience.The polarization of the He atom introduced by the electric field of tip 187, with the described electric field causing polarized He atom to tip movement, also guarantee that polarized He atom keeps being bound by tip 187, add He atom 182 and stay time quantum in ionization dish 148, and add the Ionized probability of polarized He atom along with the time.

Polarized He atom can also move to another location from a position along the surface of tip 187.Because the attraction between polarized He atom and tip 187 depends on the local strength of the electric field of the tip 187 at polarized He atom site, so the motion of polarized He atom trends towards transporting atom (such as to end layer 142) to the end of the tip 187 at the strongest tip 186 of internal field.The transport mechanism of this polarized He atom, combine (such as with the control for the current potential putting on most advanced and sophisticated 186, in order to ensure only there is the discrete ionization dish only corresponding to end layer atom 142), may be used for operating ionization source 120, He ion beam 192 is produced by gas field ion source 120, is interacted by one of He gas and end layer atom 142 at ion source 120 independent He ion in the ion beam and produced.Thus ion beam 192 comprises multiple He ion from each end layer atom 142, and each He ion can ascribe the ionization of one of end layer atom 142 to.

As discussed above, usually, the size and dimension of ionization dish 148 can put on the current potential of tip 187 by change and be modified, and can with the current potential of suitable applying greatly, make adjacent ionization dish 148 overlapping, or keep spatially separate by the current potential of suitable little applying.Typically, ionization dish 148 is spaced apart with the distance of about 0.4nm with sophisticated atomic 142,144 and 146.Independent ionization dish corresponding to sophisticated atomic typically has the thickness of about 0.02nm, is measuring along connecting on the direction of the straight line of the atom of price fixing and its correspondence.Ionization dish 148 typically has perpendicular to connecting to the diameter that the direction of the straight line of the atom of price fixing and its correspondence is measured, and this diameter is approximately the diameter of corresponding atom.

Fig. 4 shows the active configuration of tip 187, and the current potential wherein putting on most advanced and sophisticated 186 produces 3 ionization dishes 148, and each ionization dish corresponds to one of 3 terminal atom frame atoms 142.Once He ion is produced near tip 187, then due to large positive most advanced and sophisticated current potential, He ion is promptly accelerated to leave from tip.He ion accelerates along multiple track from tip 187 to leave.Figure 4 illustrates two such tracks 156.As depicted in figure 4, track 156 corresponds to the left and right limit of the full width at half maximum (FWHM) (FWHM) of middle end layer Atomic Orbits mark distribution.Like this, if track 156 is extrapolated backward, (such as along the line 154) are to the position of middle end layer atom, then it defines the virtual source 152 of middle end layer atom.The diameter of virtual source 152 is typically less than the diameter of middle end layer atom, and can be more much smaller than the diameter of middle end layer atom (such as divided by the factor of two or more, divided by the factor of 3 or larger, divided by the factor of 5 or larger, the factor divided by 10 or larger).Similar consideration is applicable to other end layer atom, and each end layer atom has corresponding virtual source size.

The little virtual source size of end layer atom can provide many advantages.Such as, with the little thickness producing the ionization dish 148 of the ion in ion beam 192 from it, the little virtual source size of ion beam 192 can assist in ensuring that ion beam 192 has relative high brightness and relative narrow ion energy distribution.

Undesirably be bound by theory, think and use too low tip temperature can negative effect stream stability and/or the adverse effect that increases from the Impurity Absorption added on tip.Usually, the temperature of most advanced and sophisticated 186 is 5K or larger (such as 10K or larger, 25K or larger, 50K or larger, 75K or larger), and/or 100K or less (such as 90K or less, 80K or less).Such as, the temperature of most advanced and sophisticated 186 can from 5K to 100K (such as, from 25K to 90K, from 50K to 90K, from 75K to 80K).The thermoelectricity that the temperature of most advanced and sophisticated 186 can pass through carrying coolant (such as liquid helium or liquid nitrogen) obtains occasionally.Alternatively or additionally, most advanced and sophisticated 186 can use cryogenic refrigerator and be cooled by calorifics.

Think if the temperature of most advanced and sophisticated 186 is too low, then absorbed He atom is reduced by the speed transported by the atom 142 moved in the terminal atom frame of tip 187, and they can ionizable atom 142 there to make time per unit not have enough He atoms to arrive.Result, when transmitting pattern when most advanced and sophisticated 186 is observed (such as, by using field ion microscope (FIM) technology, or by scanning FIM (SFIM) technology), replace (being commonly referred to flicker) from the abundance of the ion of independent end layer atom from relative high abundance to relatively low abundance.Such as, when not may be used for the Ionized He atomic time in some time near end layer atom, this can occur.Temperature along with most advanced and sophisticated 186 increases, and He atom increases to the speed that transports of the end layer atom of tip 187, and is reduced from the observation that should replace high/low abundance of end layer atom 142 or eliminates.

Also think if the temperature of most advanced and sophisticated 186 is too high, then the He atom polarized will have too high kinetic energy thus can not keep being bound in the most advanced and sophisticated 186 sufficiently long times to ensure the effective ionization of the He atom near end layer atom 142.This can also cause the disappearance when using FIM and/or SFIM imaging technique to observe from the transmitting pattern of end layer atom.As a result, produce stable ion current in order to ensure the He ionization process at each end layer atom 142 from each end layer atom 142, the temperature of most advanced and sophisticated 186 is carefully controlled, to alleviate less desirable height and low temperature effect.

Usually, ion optics 130 is configured, to be led on the surface 181 of sample 180 by ion beam 192.As described in more detail below, ion optics 130 can such as focus on, calibrate, deflect, accelerate and/or ion in degraded beam 192.Ion optics 130 can also allow the only part ion in ion beam 192 to pass ion optics 130.Usually, ion optics 130 comprise as expect the various electrostatic that configures and other ion optics.By the electric field strength of one or more element (such as, static deflecter) in operation ion optics 130, He ion beam 192 can the surface 181 of scanned sample 180.Such as, ion optics 130 can be included in two deflectors of two orthogonal direction deflected ion beam 192.Described deflector can the vicissitudinous electric field strength of tool, ion beam 192 grid are scanned district that (raster) crosses surface 181.

When ion beam 192 strikes on sample 180, various dissimilar particle 194 can be produced.These particles such as comprise secondary electron, auger electrons, secondary ion, secondary neutral particle, neutral particle, scattered ion(s) and a photon (such as x-ray photon, IR photon, optical photon, UV photon).Detector 150 and 160 is located and is configured, to measure one or more the dissimilar particle caused by the interaction between He ion beam 192 and sample 180 respectively.As shown in Figure 1, detector 150 is located, so that the particle 194 that detection mainly generates from the surface 183 of sample 180, and detector 160 is located, so that the particle 194 (particle of such as transmission) that detection mainly generates from the surface 183 of sample 180.As described in detail below, usually, any quantity and the configuration of detector can be used to microscopic system disclosed herein.In certain embodiments, multiple detector is used, and some of multiple detector are configured, to measure dissimilar particle.In certain embodiments, detector is configured, to provide the different information (the angle distribution of the energy of such as particle, given particle, total abundance of given particle) for identical particles of types.Optionally, the combination of such detector arrangement can be used.

Usually, by the information measured by detector for determining the information of sample 180.The typical information of sample 180 comprises the topographical information on surface 181, the information of the material composition on (surface 181 of sample 180 and/or subsurface district), the crystal orientation information of sample 180, voltage contrast information's (thus electrical property) on surface 181, the voltage contrast information of sub-surface region of sample 180, the optical property of sample 180, and/or the magnetic property of sample 180.Typically, this information is determined by obtaining the image of one or more sample 180.By by scanned for ion beam 192 grid surperficial 181, the information by pixel of sample 180 can obtain in discrete step.Detector 150 and/or 160 can be configured, to detect one or more dissimilar particle 194 of each pixel.Typically, pixel is foursquare, although in certain embodiments, pixel can have different shapes (such as rectangle).Pixel Dimensions corresponding to the length on the limit of pixel can be such as, from 100pm to 2 μm (such as from 1nm to 1 μm).In certain embodiments, the position of neighbor can be defined at least within 200pm (such as within least 100pm, at least 75pm, at least 50pm).Thus, the operator of system can determine the center of described bundle point (such as within least 100pm, at least 75pm, at least 50pm) at least 200pm.In certain embodiments, the visual field (field of view FOV) of sample 180 is 200nm or larger (such as 500nm or larger, 1 μm or larger, 50 μm or larger, 100 μm or larger, 500 μm or larger, 1mm or larger, 1.5mm or larger), and/or 25mm or less (15mm or less, 10mm or less, 5mm or less).Visual field is called the district of the sample surfaces of ion microscope imaging.

The work of microscopic system 100 is controlled typically via electronic control system 170.Such as, electronic control system 170 can be configured, so as the gas controlling to be provided by gas source 110, most advanced and sophisticated 186 temperature, most advanced and sophisticated 186 current potential, the current potential of extractor 190, the current potential of inhibitor 188, the setting of the element of ion optics 130, the position of sample manipulator 140, and/or the position of detector 150 and 160 and setting.Optionally, one or more these parameters can be manually controlled (such as, by the user interface integrated with electronic control system 170).Additionally or alternatively electronic control system 170 can be used (such as, pass through electronic processors, such as computer), to analyze the information being detected device 150 and 160 and collecting, and the information of sampling 180 (such as topographical information, material composition information, crystal information, voltage contrast information, optical performance information, magnetic information), these information can be optionally the form of image, figure, table, spreadsheet etc.Typically, electronic control system 170 comprises user interface, and it has the output device of display or other type, input unit and storage medium.

Helium ion microscope system

A. summarize

Fig. 5 shows the schematic diagram of He ion microscope system 200.Microscopic system 200 comprises the first vaccum case 202 of closed He ion source and ion optics 130 and the second vaccum case 204 of closed sample 180 and detector 150 and 160.He gas is sent to microscopic system 200 by dispatch tube 228 by gas source 110.Flow regulator 230 controls the flow of the He gas by dispatch tube 228.He ion source comprises the tip 186 being pasted to most advanced and sophisticated executor 208.He ion source also comprises and configures He ion is imported extractor 190 and the inhibitor 188 of ion optics 130 from most advanced and sophisticated 186.Ion optics 130 comprises the first lens 216, aims at deflector 220 and 222, aperture 224, astigmatic correction device 218, scan deflection device 219 and 221 and the second lens 226.Aperture 224 is located in aperture seat 234.Sample 180 is installed in the sample manipulator 140 in the second vaccum case 204/on.Detector 150 and 160 to be also located in the second vaccum case 204 and to be configured, to detect the particle 194 from sample 180.Gas source 110, most advanced and sophisticated executor 208, extractor 190, inhibitor 188, first lens 216, aligning deflector 220 and 222, aperture seat 234, astigmatic correction device 218, scan deflection device 219 and 221, sample manipulator 140 and/or detector 150 and/or 160 are typically electronically controlled system 170 and control.Optionally, electronic control system 170 also controls vacuum pump 236 and 237, and vacuum pump 236 and 237 is configured, to provide the reduced pressure atmosphere in vaccum case 202 and 204 inside and ion optics 130.

B. ion source

As mentioned above, usually, most advanced and sophisticated 186 can be formed by any suitable electric conducting material.In certain embodiments, most advanced and sophisticated 186 can be formed by monocrystal material, such as single-crystal metal.Typically, the specific single crystal orientation of the end layer atom of tip 187 and the axis alignment of most advanced and sophisticated 186 in 3 ° or less (such as, in 2 ° or less, in 1 ° or less).In certain embodiments, the summit 187 of most advanced and sophisticated 186 can end in atomic layer (such as 20 atoms or less, 15 atoms or less of the atom with some quantity, 10 atoms or less, 9 atoms or less, 6 atoms or less, 3 atoms or less).Such as, the summit 187 of most advanced and sophisticated 186 can be formed by W (111) and can have the end layer of band 3 end layer atoms (trimer).Fig. 6 and 7 respectively illustrates the amplification plan view of two atomic layers near the W tip 186 of tip and the illustrative diagram of end view.End layer, comprises 3 the W atoms 302 arranged with trimer, and corresponds to (111) face of W.Undesirably be bound by theory, think this trimer surface be superior (with regard to its easiness formed, again formed and stability), because the surface energy of W (111) crystal face is advantageously supported by arranging with equilateral triangle thus forming the end layer that trimeric 3 W atoms are formed.Trimer atom 302 support by the second layer of W atom 304.

In certain embodiments, most advanced and sophisticated 186 can have to comprise and are less than 3 atoms or the end layer more than 3 atoms.Such as, W (111) tip can have the end layer comprising 2 atoms, or only comprises the end layer of an atom.As an alternative, W (111) tip can have the end layer (7 or more atoms, 8 or more atoms, 9 or more atoms, 10 or more atoms, more than 10 atoms for such as 5 or more atoms, 6 or more atoms) comprising 4 or more atoms.

Alternatively, or additionally, tip (such as W (112), W (110) or W (100)) corresponding to other W crystal orientation can be used, and such tip can have comprise one or more atom (such as 2 or more atoms, 3 or more atoms, 4 or more atoms, 5 or more atoms, 6 or more atoms, 7 or more atoms, 8 or more atoms, 9 or more atoms, 10 or more atoms, more than 10 atoms) end layer.

In certain embodiments, the tip formed by the material outside monocrystalline W may be used for the ion source (monocrystalline of such as metal, the such as monocrystalline of one of above-mentioned metal), and such tip can have comprise one or more atom (such as 2 or more atoms, 3 or more atoms, 4 or more atoms, 5 or more atoms, 6 or more atoms, 7 or more atoms, 8 or more atoms, 9 or more atoms, 10 or more atoms, more than 10 atoms) end layer.

As described below, the shape of tip 187 can have the impact of the quality for ion beam, and this can have the impact of the performance for microscopic system 200.Such as, when viewed from the side, tip 187 can become around the symmetrical pattern of its longitudinal axis, or can become, in certain embodiments, from one or more end views around the asymmetric pattern of its longitudinal axis, tip 187 can become by symmetrical pattern around its longitudinal axis, further, from one or more different end views, most advanced and sophisticated 187 unsymmetrical looks can become around its longitudinal axis.Fig. 8 shows the end view (with than magnification ratio much smaller in figs. 6 and 7) at the typical case tip 300 become relative to the asymmetric pattern of its longitudinal axis 308.From given end view, use such as, the parameter in average cone direction and average cone direction, the degree become along the most advanced and sophisticated 300 asymmetric patterns of the longitudinal axis 308 can be quantized.These parameters are determined as follows.

The image of most advanced and sophisticated 300 uses scanning electron microscopy (SEM) and obtains.Fig. 8 is the illustrative diagram of such image.Tip 300 comprises summit 310 and second point 312, two points are all positioned on the longitudinal axis 308, and point 312 is along the longitudinal axis 308 and 1 μm, interval, summit 310.Dotted line 314 extends perpendicular to axle 308 and passes through point 312 in the plane of Fig. 8.Line 314 is crossing at point 316 and 318 with the outline line of most advanced and sophisticated 300.Left taper angle theta _lit is the angle between the tangent line of the outline line at point 316 tip 300 and line 320 (by putting 316 and being parallel to the dotted line that axle 308 extends).Similarly, right taper angle theta _rit is the angle between the tangent line of the outline line at point 318 tip 300 and line 322 (by putting 318 and being parallel to the dotted line that axle 308 extends).The full cone angle of most advanced and sophisticated 300 is θ _land θ _rnumerical value and.Such as, for wherein θ _lnumerical value be 21.3 ° and θ _rnumerical value be end view given in the embodiment of 11.6 °, the full cone angle for the outline line at the tip 300 of this end view is 32.9 °.Because most advanced and sophisticated 300 can for symmetrical and for asymmetric in different end views in an end view, so usually expect the average cone direction determining most advanced and sophisticated 300.Average cone direction is determined by the full cone angle of measure most advanced and sophisticated 300 8 different end views (each correspond to for most advanced and sophisticated 300 last end view around axle 308 with 45 ° of order rotating tip 300), and calculate the mean value of 8 the full cone angles thus obtained subsequently, result obtains average cone direction.Undesirably be bound by theory, think if average cone direction is too small, then can there is arc discharge (such as between the operating period at tip, when most advanced and sophisticated 300 for generation of ion beam 192), and due to the large electric field near most advanced and sophisticated 300, interacted with the sophisticated atomic outside the atom in the end layer at tip by He atom and the He ion that produces can occur.Also think, if average cone direction is excessive, then can reduce repeatedly to build again the ability of most advanced and sophisticated 300, and electric field near most advanced and sophisticated 300 can be too low to such an extent as to cannot reliably ionization He atom and produce stable He ion current.In certain embodiments, the average cone direction of most advanced and sophisticated 300 can be 45 ° or less (such as 42 ° or less, 40 ° or less, 35 ° or less, 32 ° or less, 31 ° or less), and/or average cone direction can be 15 ° or larger (such as 20 ° or larger, 23 ° or larger, 25 ° or larger, 28 ° or larger, 29 ° or larger).Such as, the average cone direction of most advanced and sophisticated 300 can be (such as from 28 ° to 32 °, from 29 ° to 31 °, 30 °) from 27 ° to 33 °.In certain embodiments, the standard deviation of 8 full cone angle measurings is 40% or less (such as 30% or less, 20% or less, 10% or less) of average cone direction.

Cone direction is θ _land θ _rnumerical value between the half of absolute value of difference.Such as, thus, for wherein θ _lnumerical value be 21.3 ° and θ _rnumerical value be end view given in the embodiment of 11.6 °, cone direction is 0.5*|21.3 °-11.6 ° |, or 4.9 °.Because with the above-mentioned reason identical for the discussion of average cone direction, can expect to determine most advanced and sophisticated average cone direction.This is on average measured cone direction by the different end view of 8 for most advanced and sophisticated 300 (each end view correspond to for last figure around axle 308 with 45 ° of sequentially rotating tip 300) and is determined in cone direction, and calculate the mean value of 8 cone orientation measurements subsequently, result is on average to bore direction.In certain embodiments, the average cone direction of most advanced and sophisticated 300 can be 10 ° or less (such as, 9 ° or less, 8 ° or less, 7 ° or less, 6 ° or less, 5 ° or less), and/or the average cone direction of most advanced and sophisticated 300 can be 0 ° or larger (such as 1 ° or larger, 2 ° or larger, 3 ° or larger, 4 ° or larger).In certain embodiments, the average cone direction of most advanced and sophisticated 300 is (such as, from 1 ° to 10 °, from 3 ° to 10 °, from 6 ° to 10 °, from 2 ° to 8 °, from 4 ° to 6 °) from 0 ° to 10 °.

Most advanced and sophisticated 300 can also characterize by its radius of curvature, radius of curvature can be determined as follows.Fig. 9 shows the diagrammatic side view of most advanced and sophisticated 300.In practice, this end view uses SEM to obtain.At the either side of the longitudinal axis 308, the slope of the outline line at tip 300 is measured.Point 324 and 326 is the points closest to summit 310 on the surface of most advanced and sophisticated 300, has the value (such as 45 ° of oblique lines) of 1 and-1 at the slope (indicated by tangent line 328 and 330 respectively) of the outline line at tip, summit 310 300 respectively.Distance between point 324 measured perpendicular to axle 308 and in the plane of Fig. 9 and axle 308 is the left cut linear distance T of most advanced and sophisticated 300 _l.Distance between point 326 measured perpendicular to axle 308 and in the plane of Fig. 9 and axle 308 is the right tangent distance T of most advanced and sophisticated 300 _r.Left radius R _lby R _l=2 ^1/2t _lcalculate, and right radius presses R _r=2 ^1/2t _rcalculate.The radius of curvature R of most advanced and sophisticated 300 presses R _land R _rmean value calculation.Thus, such as, T wherein _lbe 120nm and T _rin the embodiment of 43nm, R _l169nm, R _rbe 61nm, and R is 115nm.Because with the above-mentioned reason identical for the discussion of average cone direction, can expect to determine most advanced and sophisticated mean radius of curvature.Mean radius of curvature is measured radius of curvature by the different end view of 8 for most advanced and sophisticated 300 (each end view correspond to for last figure around axle 308 with 45 ° of sequentially rotating tip 300) and is determined, and calculate the mean value of 8 radius of curvature subsequently, result is mean radius of curvature.Undesirably be bound by theory, think if mean radius of curvature is too small, then can occur the ionization that can occur He gas near the sophisticated atomic outside arc discharge and/or the atom in the end layer at tip between the operating period at tip.If mean radius of curvature is excessive, then can reduce the ability repeatedly can building most advanced and sophisticated 300 again, and due to the lower electric field strength near most advanced and sophisticated 300, the ionization rate of the He atom near most advanced and sophisticated 300 can be reduced.In certain embodiments, the radius of curvature of most advanced and sophisticated 300 is 200nm or less (such as 180nm or less, 170nm or less, 160nm or less, 150nm or less, 140nm or less, 130nm or less), and/or the mean radius of curvature of most advanced and sophisticated 300 is 40nm or larger (such as 50nm or larger, 60nm or larger, 70nm or larger, 80nm or larger, 90nm or larger, 100nm or larger, 110nm or larger).Such as, in certain embodiments, the mean radius of curvature of most advanced and sophisticated 300 is (such as, from 50nm to 190nm, from 60nm to 180nm, from 70nm to 170nm, from 80nm to 160nm) from 40nm to 200nm.In certain embodiments, the standard deviation of 8 radius of curvature measurement is 40% or less (such as, 30% or less, 20% or less, 10% or less) of mean radius of curvature.

Figure 10 is the flow chart of the technique 400 manufacturing W (111) tip with trimeric end atomic layer.In first step 402, monocrystalline W (111) presoma line is attached at supporting component.Typically, W (111) presoma line has the diameter (such as 2mm or less, 1mm or less) of 3mm or less, and/or the diameter of 0.2mm or larger (such as, 0.3mm or larger, 0.5mm or larger).In certain embodiments, W (111) presoma line has the diameter (such as from 0.3mm to 0.4mm, 0.25mm) from 0.2mm to 0.5mm.Suitable presoma line can such as obtain from FEI Beam Technology (Hillsboro, OR).

More at large, in certain embodiments, most advanced and sophisticated presoma can be the form being different from line.Such as, most advanced and sophisticated presoma can be formed by electric conducting material, and this electric conducting material has the projection stopped with crystal structure.The end points of projection can be such as mono-crystalline structures, and can be formed by W (111), or is formed by other material in similar or different crystal orientation.

Figure 11 A and 11B respectively illustrates perspective view and the upward view of the embodiment of supporting component 520.Supporting component 520 comprises pillar 522a and 522b being connected to support substrate 524.Pillar 522a and 522b is connected to heater line 526a and 526b, and the length of W (111) presoma line 528 (such as by welding) is connected to heater line 526a and 526b.Pillar 522a and 522b can be connected to servicing unit, such as current source (such as power supply), to allow the temperature of control W (111) presoma line 528.

Matrix 524 provides the mechanical support of assembly 520 and usually by being formed by the one or more material that circulates of bearing temperature, and plays electrical insulator.Such as, in certain embodiments, matrix 524 is formed by electrical insulating material, such as glass and/or hard polymer and/or pottery.

Pillar 522a and 522b is formed by one or more electric conducting materials usually.Typically, material for the formation of pillar 522a and 522b is selected, pillar 522a with 522b is made to have similar thermal coefficient of expansion to matrix 524, and in the appropriate location that pillar 522a and 522b is remained fixed in relative to matrix 524 during the temperature cycles of presoma line 528.In certain embodiments, pillar 522a and 522b is formed by the alloy comprising iron, nickel and cobalt.The example that can form the material that the market of pillar 522a and 522b can obtain is KOVAR ^tM.

Usually, heater line 526a and 526b is formed by the one or more material with the resistivity higher than presoma line 528.Such as, in certain embodiments, heater line 526a and 526b can be formed by the material of such as tungsten-rhenium alloy.As explained below, when electric current (such as, from external power source) by this line time, heater line 526a and 526b heating, and during each most advanced and sophisticated processing step, this heat can be used to the temperature increasing and/or control presoma line 528.Usually, the diameter of heater line 526a and 526b and material are selected, to guarantee to control to be implemented for the temperature of presoma line 528 during manufacturing process.In certain embodiments, heater line 526a and 526b has such as from the diameter of 100 μm to 750 μm.

The geometrical property of matrix 524, pillar 522a and 522b and heater line 526a and 526b can desirably be selected usually.Such as, in certain embodiments, the distance between pillar 522a and 522b can be from 1mm to 10mm.

Optionally, can be attached at matrix 524 more than two pillars (such as 3 pillars, 4 pillars, 5 pillars, 6 pillars), each pillar is connected to presoma line 528 by corresponding heater line.The stability providing extra pillar can increase assembly 520 and/or reduce assembly 520 for the sensitiveness of mechanical oscillation.

In certain embodiments, presoma line 528 can be fixed in appropriate location by being applied with the supporting component of compression stress for line.Such as, Figure 12 shows the typical supporting component 520 of the Vogel seat comprising fixing presoma line 528.Suitable Vogel seat can commercially obtain from such as AP Tech (McMinnville, OR).Supporting component 550 comprises support substrate 556 and is attached at the hold-down arm 552 of matrix 556.In order to fixing presoma line 528, arm 552 is pried open and slider (such as being formed by RESEARCH OF PYROCARBON) 554 is inserted into space between arm.Presoma line 528 is inserted into the opening between slider 554 subsequently, and hold-down arm 552 is released subsequently.Due to the elasticity of arm 552, arm is applied with compression stress for slider 554 and presoma line 528 on the direction indicated by arrow 558 and 560, fixes presoma line 528 against slider 554 thus.Line 528, stiction between slider 554 and arm 552 hinder the relative motion of these elements, guarantee that line 528 remains fixed in the appropriate location of supporting component 550.Typically, line 528 extends the distance such as between 1mm and 5mm above arm 552.

Matrix 556 can by being formed similar in appearance to the material that may be used for being formed matrix 524 (such as, glass and/or hard polymer and/or pottery).The material of matrix 556 typically can the electrical insulating material of bearing temperature circulation.

Hold-down arm 552 can be formed by one or more electric conducting materials.Material for the formation of arm 552 also can be selected, and makes matrix 556 have similar thermal coefficient of expansion with arm 552, and makes during the temperature cycles of presoma line 528, and arm 552 remains secured to suitable position relative to matrix 556.In certain embodiments, arm 552 is formed by the alloy comprising iron, nickel and cobalt.The example forming the material that the market of arm 552 can obtain is KOVAR ^tM.

Slider 554 is formed by the material of such as RESEARCH OF PYROCARBON.Suitable RESEARCH OF PYROCARBON slider can obtain from such as AP Tech (McMinnville, OR).RESEARCH OF PYROCARBON slider is typically formed to produce layer structure by a series of flat carbon plate be laminated to each other.Usually, the resistivity of RESEARCH OF PYROCARBON changes according to direction, the resistivity of carbon perpendicular to (such as almost perpendicular to the direction of the plane of laminates) on the direction of sheet than along be parallel to sheet plane direction on high.During installation, slider 554 is oriented, and makes the direction of the high electrical resistance of slider 554 be roughly parallel to the direction (being such as roughly parallel to arrow 558 and 560) of the compression stress applied by arm 552.When electric current is introduced into arm 552, slider 554 produces heat due to its high resistivity.Thus, slider 554 can with the heating element of temperature adjusting presoma line 528.

Refer again to Figure 10, in second step 404, presoma line 528 is etched in electrochemical bath so that the tip of shaped wire 528.Usually, step 404 comprises multiple sub-step.

The first sub-step in the etch process can be optionally cleaning, to remove surface contaminant from line 528.This etch process can relate to and to be placed on by line 528 in chemical etching solution and to expose line 528 to interchange (AC) voltage.Such as, solution can be the 1N solution of NaOH (NaOH), and can use the AC voltage of 1V.Subsequently, whole supporting component (such as supporting component 520 or 550) can cleaned (supersonic cleaning such as in water) to remove some residual pollutant.

Next son step optionally applies the part of anticorrosive additive material to line 528 in step 404.Typically, anticorrosive additive material is applied in the length of from the summit of line 528 about 0.5 of line 528.The applying of anticorrosive additive material can be implemented, and such as, is placed on clean surface by being dripped by Resist Solution and line 528 is immersed resist for several times, allowing resist dry a little between applying for several times.The resist be applied in limits the amount of etched presoma line 528 in follow-up processing step.Because the formation at follow-up tip is often followed through etching and removes previous tip on presoma line 528, so the use of anticorrosive additive material is formed a large amount of most advanced and sophisticated on given presoma line before allowing to be thrown aside online.Various different anticorrosive additive material can be applied in presoma line 528.Typical anticorrosive additive material is cosmetic nail polish.In certain embodiments, can use more than a kind of anticorrosive additive material.But for most advanced and sophisticated formation process, the use of anticorrosive additive material is optionally, in certain embodiments, before carrying out subsequent step in a manufacturing process, anticorrosive additive material can not be applied in presoma line 528.

Next son step is in step 404 chemical etching presoma line 528.Various electrochemical etching process can be used.In certain embodiments, following electrochemical etching process is employed.Supporting component is placed in Etaching device, and this Etaching device comprises the translation device of translation supporting component, dish and extends into the electrode (such as stainless steel electrode) of dish.Etching solution is placed in dish, makes solution and electrode contact.Supporting component is reduced until resist interface just in time contact etch solution on line 528 to dish by translation device.Line 528 is lowered additional amount (such as 0.2mm) subsequently and enters etching solution.

Etching solution comprises the composition (such as NaOH) of chemical corrosion line 528.Etching solution comprises in the embodiment of NaOH wherein, and in etching solution, the concentration of NaOH can be selected, to change the corrosion rate of presoma line 528 and the chemical environment of solution.Such as, in certain embodiments, the concentration of NaOH can be 0.1M or larger (such as, 0.2M or larger, 0.5M or larger, 0.6M or larger, 0.8M or larger, 1.0M or larger, 1.2M or larger, 1.4M or larger, 1.6M or larger, 2.0M or larger, 2.5M or larger, 3.0M or larger) and/or 10.0M or less (such as, 9.0M or less, 8.0M or less, 7.0M or less, 6.5M or less, 5.5M or less, 5.0M or less, 4.5M or less, 4.0M or less).In certain embodiments, the concentration of NaOH is from 0.5M to 10.0M (such as, from 1.0M to 9.0M, from 1.5M to 8.0M, from 2.0M to 7.0M, from 2.0M to 6.0M, from 2.0M to 3.0M).

In certain embodiments, other corrosive agent may be added to etching solution, substitutes or is additional to NaOH.The example of such corrosive agent comprises KOH (comprising the KOH of melting), HCl, H ₃pO ₄, H ₂sO ₄, KCN and/or melting NaNO ₃.Corrosive agent in etching solution can corrode the ability of the presoma line formed by the material of particular type according to it and select.Such as, the etchant of such as NaOH may be used for corroding the line formed by W.For the line that the different materials by such as Ir is formed, other corrosive agent can be used in the etch solution.

In certain embodiments, etching solution can comprise the surfactant of relatively little amount.Undesirably be bound by theory, think that surfactant can assist the symmetry of the etching improving presoma line 528.The surfactant being suitable for this object comprises such as PhotoFlo 200, can obtain from Eastman Kodak (Rochester, NY).Usually the concentration of surfactant is 0.1 volume % or larger (such as 0.2 volume % or larger, 0.3 volume % or larger, 0.4 volume % or larger) in the etch solution, and/or 2 volume % or less (such as 1 volume % or less, 0.8 volume % or less, 0.6 volume % or less).

In certain embodiments, etch process can also carry out in the situation of the stirring of etching solution.Etching solution empirically can be determined according to the result of etching by the speed of stirring.

After locating presoma line 528 in the etch solution, external power source is connected to line 528 and electrode, and strides across line 528 and electrode applying current potential, to promote that the electrochemical corrosion of line 528 is reacted.Usually, voltage can from or AC power supplies or direct current (DC) power supply be applied in.The size of the voltage applied can be selected by expectation is selected usually, and the empirical of size according to producing uniform etched presoma line 528 is determined.Such as, in certain embodiments, the size of the current potential be applied in is 3.0V or larger (such as 3.2V or larger, 3.5V or larger, 4.0V or larger, 5.0V or larger, 10V or larger, 15V or larger, 20V or larger), and/or 50V or less (such as, 40V or less, 35V or less, 30V or less, 25V or less).In certain embodiments, the size (such as, from 3.5V to 40V, from 4.0V to 30V, from 4.5V to 20V) between 3.0V and 50V of the current potential be applied in.

The duration putting on the AC pulse of etching solution usually preferably can change thus improve the etching of controlled line 528.Such as, in certain embodiments, the pulse putting on etching solution has the duration of 10ms or longer (such as 25ms or longer, 50ms or longer, 75ms or longer, 100ms or longer, 150ms or longer, 200ms or longer, 250ms or longer), and/or 1 second or shorter (such as 900ms or shorter, 800ms or shorter, 700ms or shorter, 650ms or shorter, 600ms or shorter).In certain embodiments, the pulse putting on etching solution has the duration (such as from 10ms to 900ms, from 10ms to 800ms, from 10ms to 700ms, from 10ms to 600ms) from 10ms to 1 second.

Usually, the pulse of duration and/or size variation can be applied in etching solution thus cause the corrosion of presoma line 528 in the region of the line contacted with solution.Typically, during technique, the end of part presoma line 528 is fallen in etching solution, and being further processed in subsequent step by the etching region newly exposed of presoma line 528.Such as, suitable etching mode comprises the initial applying of the AC pulse of about 100 size 5V, and each pulse has the duration of about 580ms.After this, apply the series of about 60 pulses, each pulse has the duration of about 325ms and size is 5V.Then, the pulse with duration 35ms and size 5V is applied in, until the end of line 528 is fallen in etching solution.

During applying electric pulse to etching solution, the immersion depth of presoma line 528 can be adjusted.Typically, etch process causes the narrow diameter district forming presoma line 528.The immersion depth of adjustment line 528 can assist in ensuring that the meniscus of etching solution is located in the mid point close to narrow diameter district, and this can improve the probability at the tip forming relative symmetry.Along with close to drop point (such as, along with narrow diameter district becomes very little), carry out the adjustment of immersion depth, to guarantee that the end of presoma line 528 is not snapped.After dropping in the end of presoma line 528, the tip of the line 528 be newly exposed is immersed etching solution considerably lessly and is applied other electric pulse.In certain embodiments, two electric pulses are applied.For example, first electric pulse can be that (such as, from 3V to 7V, the 5V) duration is from 20ms to 50ms (such as from 1V to 10V, from 30ms to 40ms, 35ms), and the second pulse can from 1V to 10V (such as, from 3V to 7V, 5V), duration is (such as, from 15ms to 20ms, 17ms) from 10ms to 25ms.

Supporting component is removed from Etaching device subsequently, by rinsing (such as, with distilled water or deionized water) and dried (such as the flowing down of nitrogen of drying).

The next step 406 of technique 400 is that inspection supporting component (and especially the etched tip of line 528) is to verify that etched tip has suitable geometric characteristic.As discussed previously, such as, the mensuration of geometric characteristic comprises the contour images that obtains etched tip and calculates various geometric parameter from the data that contour images obtains.Such as SEM can be used to test.The contour images at the tip of line 528 can obtain with very high enlargement ratio, and such as 65, the enlargement ratio of 000 times.The geometric parameter measured such as can comprise average tip curvature radius, on average bore direction, average cone direction.In this situation, if the shape at etched tip is improper, then can by assembly being turned back to Etaching device and reducing the etched tip of line 528 until tip just in time contact etch solution and reshape tip slightly to dish.Electric pulse in a small amount (such as from 1 to 3 duration 35ms and the pulse of size 5V) may be used for the tip reshaping line 528.Such as, if the average cone direction at the tip of line 528 is too small, then the pulse of short duration may be used for increase average cone direction and increases the mean radius at etched tip indistinctively in a small amount.After the applying of these other electric pulses, tip can then again be checked to verify that it is correctly reshaped in SEM.

Subsequently, in a step 408, the end layer on the summit at the tip of etched line 528 is formed trimer.This technique is usually directed to imaging tip (such as using FIM or SFIM) and be shaped most advanced and sophisticated (such as using field evaporation).

In certain embodiments, step 408 is included in FIM and installs supporting component and vacuumized by FIM.The tip cooled (such as, to liquid nitrogen temperature) of line 528, and He gas is provided to FIM (such as, with about 5 × 10 ^-6the pressure of Torr).The tip of line 528 is applied in relative to the positive potential (such as, relative to extractor 5kV or larger) of extractor, and the coupling vertex at the tip of He atom and line 528 thus form He ion.The summit that He ion is accelerated the charged at the tip from line 528 is left.Detector, such as, be optionally coupled to the phosphor screen of the bidimensional imaging device of such as CCD camera, be located in the distance selected apart from ionogenic, and be oriented as and be approximately perpendicular to from ionogenic main ion beam trajectory.Collision ion cause phosphor shield launch photon, photon detect by CCD camera.Region than the ion be detected corresponding to relative small number shows brighter by the region corresponding to the image of the ion be detected of relative majority amount.The ionization of He gas atom comes across near the independent ion source atom in the summit place at the tip of line 528.As a result, be detected the image that device absorbs and correspond to ionogenic transmitting pattern.More specifically, the independent atom on ion source summit is corresponded to from the bright spot the image that detector obtains.Thus, FIM image is the image on the summit at the tip of the line 528 that atom is resolved.According to FIM image, the crystal structure of the atom on ion source summit, orientation and concrete layout can be determined.

If the desired characteristic on the summit at the tip of line 528 does not exist, then tip can use such as field evaporation and be formed.During field evaporation, the image most advanced and sophisticated by etching of line 528 is in the focus of FIM detector and in FIM, still there is the background pressure of He gas, positive potential on tip is increased (such as, relative to extractor 15kV or larger) until the electric field of gained starts to remove W atom (with pollutant atom) from the position the highest tip of internal field.The removed speed of atom is controlled, to avoid atomic group to be removed substantially simultaneously.Usually, field evaporation continues under FIM launches the detection of image, until the surface demonstrating etched tip is in correct crystal orientation, and determines do not have less desirable pollutant in the end layer at tip.

After field evaporation, can expect that sharpening is most advanced and sophisticated.In order to sharpening is most advanced and sophisticated, He gas is pumped out FIM room, and the bias voltage at the tip of online 528 is changed to relative to being negative publicly, makes the summit electron emission at the tip of line 528.Response incident electron and produce the detector of photon, such as, cover phosphor and obtain glass screen and located, obtain electronics to intercept from tip.The photon produced is detected by suitable detector (such as the photon detector of CCD device, photomultiplier, photodiode or other type) and is used to monitor the electron emission from tip.In certain embodiments, detector can couple directly to photon generation apparatus.In certain embodiments, detector and photon generation apparatus are not directly coupled.Such as, the optical element of such as mirror may be used for produced photon to be directed to detector.

Put on most advanced and sophisticated voltage bias to be adjusted, until measure the electron stream (such as from 25pA to 75pA, from 40pA to 60pA, 50pA) of expectation.The most advanced and sophisticated temperature (such as from 1000K to 1700K, from 1300K to 1600K, 1500K) being heated to expectation subsequently, and tip by visual monitoring to detect the light of the applying in response to voltage and heat of launching from tip.The light sent from tip can be monitored, such as, use the mirror of location so as to the reflection of suitable photo-detector (such as CCD device, the photo-detector of photomultiplier, photodiode or other type) the light launched by tip).Heat can use various device to be applied in tip, such as resistive heating device (such as reheater), radiant heating device, induction heating equipment, or electron beam.Light first from tip occur after 15 seconds to 45 seconds (such as 25 seconds to 35 seconds, 30 seconds), the current potential be applied in and heater are all closed, and produce and have the line 528 of trimer as its end atomic layer.

Optionally, gas may be used for sharpening tip.Such as, oxygen can be introduced into FIM room to improve the sharpening of the W tip end surface of sphering.After He gas is removed from FIM room, sharpening gas (such as oxygen) is introduced into, and tip is heated under oxygen existed with selected and pressure and time.Such as, in order to sharpening sphering W is most advanced and sophisticated, first He is pumped FIM room and be heated to the temperature (such as 1500K) between 1300K and 1700K with rear tip.Tip is maintained between 1500K mono-to five minute.Then, oxygen can about 10 ^-5be introduced into chamber under the pressure of Torr, keep most advanced and sophisticated temperature about 2 minutes simultaneously.Along with oxygen flows into continuing of described room, most advanced and sophisticated temperature is then decreased to (such as 1000K) between 700K and 1200K, and tip is maintained at this temperature roughly two minutes.Finally, the oxygen supply of chamber to be closed and oxygen is pumped out chamber until oxygen pressure is wherein less than 10 ^-7torr.Meanwhile, tip is cooled to normal working temperature (such as in certain embodiments roughly 77K) and He is reintroduced into FIM room.When tip is imaged in FIM pattern, be observed corresponding to the W trimer on the top, tip in W (111) face.W (111) line had as trimeric end layer can be removed from FIM subsequently and be stored for subsequent use.

Although disclosed the FIM that is wherein separated with system 200 embodiment for imaging/shaped wire tip, in certain embodiments, system 200 can be used as FIM.In such embodiments, usually according to the technique described in paragraph above, supporting component is installed in ion source and system 200 works as FIM.In certain embodiments, when operating system 200 is in FIM pattern, detector can be located in sample 280 and usually be located part (that is, sample 180 is not present in its normal position).In certain embodiments, when operating system 200 is in FIM pattern, the flat sample with relatively high secondary electron productive rate can be located in sample 180 and usually be located part, and be detected by He ion and the flat sample secondary electron produced that interacts, because the intensity on usually extremely flat with the He ion incidence sample of the intensity of the secondary electron be detected is proportional.

Optionally, system 200 can work during the imaging/forming technology of tip online in SFIM pattern.In such embodiments, described technique as described in previous paragraph, except aiming at deflector 220 and 222 for by the surface in scanned for ion beam grid aperture 224 thus except the Flied emission pattern producing the summit at line tip.Part through the ion beam in aperture 224 can optionally be focused on by the second lens 226, or keeps not being focused.In SFIM pattern, the image at line tip is obtained by by pixel, and each measured image pixel intensities is corresponding to the part of ion beam being allowed to pass through aperture 224.Image pixel intensities by the Flied emission pattern at tip with image, or more at large, can present with multiple signal of telecommunication together.Flied emission pattern can be used to evaluate most advanced and sophisticated various performances subsequently, to determine its adaptability for gas field ion microscope.In SFIM pattern, detector can as the location described in previous paragraph and be as the type described in previous paragraph.Optionally, detector can be the integrated detector in space, such as photomultiplier or photodiode.

It is most advanced and sophisticated that above-mentioned technique may be used for sharpening W first usually, and may be used for the sharpening again at W tip in ion microscope system.Sharpening more like this can be carried out in system 200, both just carries out in the FIM of the initial process at sharpening W tip outside system 200.Sharpening usually can to carry out with initial sharpening identical mode again, or sharpening technique can be different from initial sharpening technology again.In certain embodiments, whether be expect to assess sharpening again, microscopic system 200, as mentioned above if can be configured to work in FIM and/or SFIM pattern.According to the image at one or more tips, then sharpening technique can be activated or postpone.In certain embodiments, other standard can be used to determine when to start sharpening again.Such as, if when the ion current measured from tip drops down onto under the threshold value of foundation after the work of a period of time, sharpening again can be started.

As the first step in sharpening again, tip can by field evaporation to remove the atom close to tip.Such as, microscopic system 200 can be configured to work in FIM and/or SFIM pattern, discusses as above-mentioned, and puts on most advanced and sophisticated current potential and can carefully be adjusted, to produce the field evaporation of controlled sophisticated atomic.During evaporation technology on the scene, most advanced and sophisticated Flied emission pattern can by detector (such as, phosphorus coupling photons detector, or be configured to measure the secondary electron detector from the secondary of flat sample) obtain in FIM or SFIM pattern, and monitored to determine when to interrupt field evaporation technique.As before, when the surface at tip is in correct crystal orientation and is clean, this tip can by sharpening again.

He gas is pumped out microscopic system 200, until background He pressure is less than about 10 ^-7torr.In certain embodiments, in order to start sharpening again, negative potential is applied to tip, to operate microscopic system 200 in electronic pattern, and most advanced and sophisticated by heating as previously described by sharpening.In certain embodiments, the sharpening gas of such as oxygen is introduced into microscopic system 200, and tip is in the presence of oxygen by the time that heating is selected, as described earlier.Follow sharpening technique again, He gas is reintroduced into microscopic system 200, and when system configuration be work in FIM and/or SFIM pattern, the one or more image at the tip of sharpening is ingested again, to verify that tip comprises the trimer corresponding to W (111) face.

In certain embodiments, some again sharpen steps automatically can be carried out by the hardware in electronic control system 170 and/or software.Such as, in certain embodiments, the sharpening technique being applied to sphering tip can be carried out in an automatic fashion.The example of the sharpening job step that electronic control system 170 is implemented is as described below.First, control system 170 by activating pump 236 and/or 237, microscopic system 200 is vacuumized and cooling tip to liquid nitrogen temperature.When the background pressure of the gas in microscopic system 200 is less than the threshold value be established, most advanced and sophisticated by control system 170, by being heated to 1500K for the electric current supporting most advanced and sophisticated heater wire applying calibration.Under 1500K after two minutes, oxygen is introduced microscopic system 200 by the valve opened in source of oxygen by control system 170.Valve openings is adjusted, to remain in microscopic system 200 about 10 ^-5the oxygen pressure of Torr.After other two minutes, most advanced and sophisticated temperature, by control system 170, is reduced to 1100K by regulating liquid nitrogen cooling agent to enter the flow of system.Under 1100K after two minutes, control system 170 close oxygen supply for system and cooling tip to liquid nitrogen temperature.In this situation, FIM and/or the SFIM image at (being measured by operator) tip may be used for the existence of manual verification at the W (111) on the summit at tip.

Undesirably be bound by theory, think that oxygen can promote the trimeric formation of the end atomic layer as tip.In certain embodiments, the pressure of the oxygen in FIM chamber can be 10 ^-7torr or larger (such as 10 ^-6torr or larger, 10 ^-5torr or larger, 10 ^-4torr or larger), and/or 1Torr or less (such as, 10 ^-1torr or less, 10 ^-2torr or less, 10 ^-3torr or less).In certain embodiments, the pressure of the oxygen in FIM chamber can be from 10 ^-8torr to 10 ^-2torr is (such as, from 10 ^-7torr to 10 ^-3torr, from 10 ^-6torr to 10 ^-4torr).Other gas and material also may be used for promoting the trimeric formation as end atomic layer during most advanced and sophisticated sharpening.Such as, such as palladium, platinum, gold and/or indium material can before sharpening again by vapour deposition on the surface at the tip of sphering.Think that these materials can promote the trimeric formation on the summit at tip more reliably.

In certain embodiments, the sharpening at W tip can be realized by the controlled heat at tip, and not applied field or intentionally add oxygen.Such as, W tip can through the following steps by sharpening: 1) install most advanced and sophisticated in FIM chamber; 2) the total pressure of FIM chamber is reduced; 3) heated tip keeps 5 minutes to 1000K; And cool (such as to liquid nitrogen temperature).Undesirably be bound by theory, think that the trace being present in the oxygen on tip as oxide can contribute to using heat sharpening most advanced and sophisticated.In certain embodiments, can be exposed to oxygen stream by the tip of sharpening, be placed in the environment of basic anaerobic, and by controlled heating by sharpening.Think that the method can produce W oxide on the surface at tip, and most advanced and sophisticated sharpening technique can be assisted from the oxygen of W oxide release when heating.

In certain embodiments, one or more additional gas can exist during most advanced and sophisticated sharpening.Such as, in certain embodiments, nitrogen can exist.Undesirably be bound by theory, think that nitrogen can contribute to etching most advanced and sophisticated to provide the structure of the more sphering had as trimeric end atomic layer; Think that the tip that the trimer of the less sphering of such structure comparison terminates is more stable.Usually, nitrogen and oxygen are introduced into simultaneously.In certain embodiments, the pressure of the nitrogen in FIM chamber can be 10 ^-8torr or larger (such as, 10 ^-7torr or larger), and/or 10 ^-5torr or less (such as, 10 ^-6torr).In certain embodiments, the nitrogen pressure in FIM chamber can from 10 ^-5torr to 10 ^-8torr is (such as, from 10 ^-6torr to 10 ^-7torr).

Optionally, at formation trimer and auxiliary guarantee most advanced and sophisticated sharpening technique be repeatably after, put on and be increased by the positive potential at the tip of sharpening, the field evaporation at controlled tip is occurred.After field evaporation most advanced and sophisticated a period of time, tip is rendered as the shape of sphering again.Typically, the tip of sphering produces the transmitting pattern similar in appearance to the tip after initial fields evaporation step.Then, the tip of sphering again in electronic pattern by sharpening, to produce as trimeric end atomic layer (such as using above-mentioned technique).In certain embodiments, in order to increase by the life-span at the tip of sharpening and stability, one or more trimers can use field evaporation technology to be removed from by the tip of sharpening.Such as, the atomic layer of the top at the sharpening tip formed by 3 atomic layers can be removed, to represent the atomic layer comprised more than 3 atoms below.The atomic layer be newly exposed can by further field evaporation, to produce W atom trimer on its summit.The trimer of this new formation, together with the other trimer formed during field evaporation, can be evaporated.This technique to cause near its summit most advanced and sophisticated sphering successively.Most advanced and sophisticated by sphering, the electric-force gradient near tip is reduced, and reduces the probability of the sophisticated atomic experience field evaporation when microscopic system 200 works, and adds most advanced and sophisticated stability and life-span.

In the step 410 of technique 400, the summit 187 of most advanced and sophisticated 186 is aligned in system 200.Adopt the supporting component be arranged in microscopic system 200, use one or more vacuum pumps that microscopic system 200 is vacuumized, and heat is applied in most advanced and sophisticated 187 to remove subsequently, such as oxide, condensate and/or other impurity that can be pasted to tip end surface any.Typically, such as, tip 186 is heated to temperature (such as, 1000K or higher, 1100K or higher) the duration 10s or longer (such as, 30s or longer, 60s or longer) of 900K or higher.Heating can also assist facet tip 186 again, jeopardizes the situation of most advanced and sophisticated shape in the existence of impurity.

The situation of radioluminescence is caused by applying heat most advanced and sophisticated 186, the light propagated from tip 186 along the longitudinal axis by observation (such as, by inserting the reflecting element of such as mirror and guiding a part of light to the detector of such as CCD camera), then the longitudinal axis rough alignment of tip and ion optics 130.The position of most advanced and sophisticated 186 and/or orientation can be changed by the most advanced and sophisticated executor 208 of adjustment, to guide light from most advanced and sophisticated 186 through ion optics 130.

After this rough alignment technique, microscopic system 200 is configured, to work in FIM or SFIM pattern, by reducing the background pressure in vaccum case 202 and 204, cooling tip 186 (such as, to about liquid nitrogen temperature), and via gas source 110 by the district near He gas atom stream introducing most advanced and sophisticated 186.The image of the Flied emission pattern of the He ion from most advanced and sophisticated 186 is measured by the detector of suitable configurations, and according to this image, most advanced and sophisticated executor 208 is used to the longitudinal axis that alignment field launches pattern and ion optics 130, makes the Flied emission pattern of most advanced and sophisticated 186 centered by the longitudinal axis.Observing the modulation of the induction of the Flied emission pattern of most advanced and sophisticated 186 by changing the current potential putting on the first lens 216 simultaneously, can the test that centers be carried out.If the size being detected the Flied emission pattern that device observes changes owing to putting on the current potential of lens 216, but the invariant position at the center of pattern, the then axis alignment of tip 186 and the first lens 216.On the contrary, if the center response of the Flied emission pattern of most advanced and sophisticated 186 puts on the current potential of the first lens 216 and changes, then most advanced and sophisticated 186 centered by the longitudinal axis of the first lens 216.The most advanced and sophisticated orientation of 186 and the adjustment of position can be repeated repeatedly, until most advanced and sophisticated 186 aim at well enough with the longitudinal axis of the first lens 216 by most advanced and sophisticated executor 208.Typically, this test that centers carries out not having aperture 224 in place.

Fine alignment technique can be carried out subsequently, to guarantee that the He ion produced by He gas atom and the interaction of three atomic layers on the summit 187 at tip 186 is through aperture 224.The current potential (discussion see below) putting on deflector 220 and 222 is adjusted, make through the He ion in the ion beam 192 in aperture 224 70% or more (such as 75% or more, 80% or more, 85% or more, 90% or more, 95% or more, 97% or more, 99% or more) via He gas atom only with most advanced and sophisticated 186 summit one of three trimer atoms interaction and produced.Simultaneously, the adjustment putting on the current potential of deflector 220 and 222 ensure that aperture 224 avoids 50% of the He ion in the ion beam 192 produced via He gas atom and other two trimer atomic interactions or more (such as, 60% or more, 70% or more, 80% or more, 90% or more, 95% or more, 98% or more) to arrive the surface 181 of sample 180.As the result of this fine alignment technique, through aperture 224 and the He ion beam leaving ion optics 130 comprises main only ionizable He atom near one of 3 trimer atoms on the summit of most advanced and sophisticated 186.

Refer again to Figure 10, the situation of the axis alignment of tip 186 and the first lens 216, and He ion beam is aligned, make a part for ion beam 192 through aperture 224, microscopic system 200 can work in the step 412 of technique 400 in He ion mode.System 200 is used in the embodiment in FIM pattern during sharpening wherein, and FIM detector and/or other FIM element are moved, and sample 180 can be located to be exposed to ion beam 192.Be that positive current potential is applied in most advanced and sophisticated 186 relative to extractor 190, and He gas is introduced into vaccum case 202 by gas source 110.The He ion that with the interaction of 3 trimer atoms one of on the summit of most advanced and sophisticated 186 produce main by helium gas atoms is directed across aperture 224 by ion optics 130, and is conducted to sample 180.

In certain embodiments, the current potential being applied to most advanced and sophisticated 186 is 5kV or larger (such as, 10kV or larger, 15kV or larger, 20kV or larger).In certain embodiments, the current potential putting on most advanced and sophisticated 186 is 35kV or less (such as, 30kV or less, 25kV or less).Such as, in certain embodiments, the current potential of most advanced and sophisticated 186 is put on from 5kV to 35kV (such as, from 10kV to 30kV, from 15kV to 25kV).

In certain embodiments, at the duration of work of microscopic system 200, He atmospheric pressure is 10 ^-8torr or larger (such as, 10 ^-7torr or larger, 10 ^-6torr or larger, 10 ^-5torr or larger).In certain embodiments, the He atmospheric pressure in microscopic system 200 is 10 ^-1torr or less (such as, 10 ^-2torr or less, 10 ^-3torr or less, 10 ^-4torr or less).Such as, in certain embodiments, in microscopic system 200, He atmospheric pressure is from 10 ^-7torr to 10 ^-1torr is (such as, from 10 ^-6torr to 10 ^-2torr, from 10 ^-5torr to 10 ^-3torr).

In order to verify the integrality of most advanced and sophisticated 186, by operating microscopic system 200 in FIM or SFIM pattern, can be monitored termly from the Flied emission pattern of most advanced and sophisticated 186, as discussed above.If keep perfect at tip 187 trimer structure, then most advanced and sophisticated 186 can continue to be used to provide ion beam to microscopic system 200.But in some environments, no longer it is perfect that FIM or the SFIM image of most advanced and sophisticated 186 can be presented in trimer structure in tip 187.In this situation, most advanced and sophisticated 186 can first by field evaporation, so that sphering is most advanced and sophisticated and remove impaired trimer structure, and uses above-mentioned technique original position sharpening again (such as, not removing most advanced and sophisticated 186 from microscopic system 200) subsequently.

Monitoring from the Flied emission pattern of most advanced and sophisticated 186 can according to the performance such as reduced (ion current such as reduced), the image aberration observed and/or the standard of error, or other predetermined standard and automatically carrying out.In order to absorb the FIM image of most advanced and sophisticated 186, sample 180 can be removed from its position, and the detector of the ccd detector of such as phosphor coupling can be placed on the previous position of sample 180.As an alternative, the flat sample with relatively high secondary electron productive rate can travel in position with alternative sample 180, and suitable detector can be located and configure, so that the interaction detected due to He ion and sample and leave the secondary electron of sample.Aperture 224 can be removed (or major diameter opening 225 can be selected) make by He gas atom with most advanced and sophisticated 186 interaction the ion that produces do not hindered significantly.These operations can be carried out in an automated way.

In order to absorb the SFIM image of most advanced and sophisticated 186, as described in for FIM imaging, detector can be introduced into, and aperture 224 can be maintained in appropriate location.Aim at deflector 220 and 222 and may be used for crossing the emission of ions pattern of aperture 224 grid scanning most advanced and sophisticated 186 thus the image obtained by the tip 186 of pixel-wise.By electronic control system 170, the acquisition of the one or more image of most advanced and sophisticated 186 can be automated, and electronic control system 170 can control the layout in aperture, the motion of sample and detector, and is applied to the current potential of most advanced and sophisticated 186 and aligning deflector 220 and 222.

With reference to Figure 13, above-mentioned alignment procedures typically aims at the most advanced and sophisticated longitudinal axis 207 of 186 and the longitudinal axis 132 of ion optics 130, makes the distance d between the axle 207 and 132 on the summit 187 of most advanced and sophisticated 186 be less than 2mm (be such as less than 1mm, be less than 500 μm, be less than 200 μm).In certain embodiments, the angle between the axle 207 and 132 on the summit 187 of most advanced and sophisticated 186 is 2 ° or less (such as 1 ° or less, 0.5 ° or less, 0.2 ° or less).

Extractor 190 comprises opening 191.Usually, can by the shape expecting selective extraction device 190 and opening 191.Typically, these features are selected, to guarantee that He ion is imported ion optics 130 effectively and reliably.Such as, go out as shown in Figure 13, extractor 190 has the thickness t in z orientation measurement _e, at the width a of the opening of x orientation measurement, and be located in z direction from the distance e that the summit 187 of most advanced and sophisticated 186 is measured.In certain embodiments, t _e100 μm or longer (such as 500 μm or longer, 1mm or longer, 2mm or longer), and/or t _e10mm or shorter (such as 7mm or shorter, 5mm or shorter, 3mm or shorter).In certain embodiments, most advanced and sophisticated 186 summit 187 and extractor 190 between distance be 10mm or shorter (such as 8mm or shorter, 6mm or shorter, 5mm or shorter, 4mm or shorter, 3mm or shorter, 2mm or shorter, 1mm or shorter).In certain embodiments, extractor 190 is located farther than most advanced and sophisticated 186 in the+z direction, as shown in Figure 13.In certain embodiments, extractor 190 is located farther than most advanced and sophisticated 186 on-z direction, goes out as shown in Figure 13.In such embodiments, such as, most advanced and sophisticated 186 give prominence to through extractor 190 and extend more farther than extractor 190 along z-axis in+z direction.Although extractor 190 is shown as having concrete configuration in fig. 13, more at large, extractor 190 can be the design of any expectation.Such as, in certain embodiments, opening 191 can have the curved side of any intended shape.

Extractor 190 can be biased by plus or minus relative to most advanced and sophisticated 186 usually.In certain embodiments, the current potential putting on extractor 190 is relative to most advanced and sophisticated 186-10kV or larger (such as-5kV or larger, 0kV or larger), and/or 20kV or less (such as 15kV or less, 10kV or less).

Optionally, inhibitor 188 can also be present near most advanced and sophisticated 186.Put on the current potential of inhibitor 188 by adjustment, inhibitor 188 may be used for such as changing the Electric Field Distribution near most advanced and sophisticated 186.Together with extractor 190, inhibitor 188 may be used for the track controlling the He ion produced most advanced and sophisticated 186.Inhibitor 188 has the A/F k measured in the x direction, the thickness t measured in a z-direction _s, and the distance s that the summit being positioned as distance most advanced and sophisticated 186 is measured in a z-direction.In certain embodiments, k is 3 μm or longer (such as, 4 μm or longer, 5 μm or longer) and/or 8 μm or shorter (such as 7 μm or shorter, 6 μm or shorter).In certain embodiments, t _s500 μm or longer (such as 1mm or longer, 2mm or longer), and/or 15mm or shorter (such as 10mm or shorter, 8mm or shorter, 6mm or shorter, 5mm or shorter, 4mm or shorter).In certain embodiments, s is 5mm or shorter (such as 4mm or shorter, 3mm or shorter, 2mm or shorter, 1mm or shorter).In certain embodiments, as shown in Figure 13, inhibitor 188 is located along+z direction further than most advanced and sophisticated 188.In certain embodiments, most advanced and sophisticated 18 are being located along+z direction further than inhibitor 188, make most advanced and sophisticated 186 to extend through inhibitor 188 in the+z direction.

Usually, microscopic system 200 can be configured, and makes after by extractor 190, and the energy of the ion in ion beam 192 can be selected by expectation.Typically, after passing through inlet opens 133 to ion optics 130, the average energy of the ion in ion beam 192 is 5keV or larger (such as 10keV or larger, 20keV or larger, 30keV or larger) and/or 100keV or less (such as 90keV or less, 80keV or less, 60keV or less, 50keV or less, 40keV or less, 30keV or less).Such as, in certain embodiments, after passing through inlet opens 133, the average energy of the ion in ion beam 192 is from 5keV to 100keV (such as from 10keV to 90keV, from 20keV to 80keV).Such as, be transmitted through in the embodiment of the ion of sample in expectation detection, higher ion energy (such as 50keV to 100keV) can be used.

In addition, in certain embodiments, the energy of the ion in ion beam 192 can be changed and not change ion current.That is, the current potential being applied to most advanced and sophisticated 186 can be adjusted to revise the average energy of ion beam 192 and the ion beam current that significantly do not change from ion beam 192.

C. ion optics

With reference to Figure 14, ion beam 192 enters ion optics 130 from gas field ion source 120 via inlet opens 133.Ion beam 192 is first by the first lens 216.The position of the first lens 216 and current potential are usually selected so that focused ion beam 192 to bridge position C, and the position of some C is the distance p apart from aperture 224 in z orientation measurement.Usually, the first lens 216 are positioned as the distance f that distance inlet opens 133 is measured in a z-direction.In certain embodiments, distance f is 5mm or larger (such as, 10mm or larger, 15mm or larger), and/or 30mm or less (such as, 25mm or less, 20mm or less).

Usually, the first lens 216 can be biased by plus or minus relative to most advanced and sophisticated 186.In certain embodiments, the current potential putting on the first lens 216 be relative to most advanced and sophisticated 186-30kV or larger (such as,-20kV or larger ,-10kV or larger), and/or 40kV or less (such as, 30kV or less, 20kV or less, 15kV or less, 10kV or less).

Usually, distance p can be 1mm or larger (such as, 5mm or larger, 10mm or larger), and/or 100mm or less (such as, 70mm or less, 50mm or less, 30mm or less, 20mm or less).The position changing some C can change the size of the ion beam 192 in x and/or the y direction of the position in aperture 224, and this optionally can control the share by the ion in the ion beam 192 in aperture 224.Although be illustrated as being positioned in-z direction to be in fig. 14 distal to aperture 224, bridge position C can be positioned in+z direction in certain embodiments and be distal to aperture 224.

Aim at deflector 220 and 222 to be configured, to guide a part for ion beam 192 by aperture 224 and the second lens 226.Various design and/or device may be used for building this deflector.In certain embodiments, such as, deflector 220 and 222 can each four pole electrodes naturally, and two four pole electrodes are contacted setting.

Deflector 220 and 222 each comfortable x and y both direction can all deflect He ion beam 192.The current potential putting on the electrode of deflector 220 and 222 can be adjusted, to guarantee that a part for ion beam 192 is by aperture 224 and the second lens 226.In certain embodiments, the current potential putting on deflector 220 and 222 is adjusted, to realize concrete alignment condition, and subsequently when microscopic system 200 works current potential keep static.Suitable detector observation ion beam 192 that use is such as configured and evaluated is aligned by, so that imaging aperture 224 by the ion beam 192 in aperture 224.Deflector 220 and/or 222 can also be adjusted, and makes the axis alignment of this part by the ion beam 192 in aperture 224 and the second lens 226.In order to assess the aligning of the ion beam 192 by the second lens 226, the current potential putting on the second lens 226 can be changed (being commonly referred to swing) and observe result on imaging detector.If put on the result of the current potential of the second lens 226 as changing, the image modification size of ion beam 192 and do not change position, then ion beam 192 is aligned by the second lens 226.If the center of ion beam 192 changes as the result changing current potential, then ion beam 192 is not aimed at the second lens 226.In this situation, the current potential putting on deflector 222 and/or 220 can be further adjusted and repeat rocking test in an iterative fashion, until realize aiming at.

Usually, the current potential putting on the various electrode members aiming at deflector 220 and 222 can be selected by expectation, to produce the deflection relative to the ion beam 192 of the ad-hoc location of both aperture 224 and the second lens 226.Each electrode in deflector 220 and 222 can for public external ground by or just or negative ground be biased.Usually, the current potential putting on any electrode can be relative to public external ground 100V or less (such as 75V or less, 50V or less) and/or 10V or larger (such as, 25V or larger, 40V or larger).During operation, such as, the current potential putting on any electrode in deflector 220 and 222 can be from 10V to 100V (such as, from 10V to 75V, from 10V to 50V) relative to public external ground.

Aperture 224 is located relative to ion beam 192, to allow part ion in ion beam 192 by aperture 224.Typically, aperture 224 does not have the current potential be applied in.In certain embodiments, the width w measured in the x direction of the opening 225 in aperture 224 is 1 μm or larger (such as 2 μm or larger, 5 μm or larger, 10 μm or larger, 15 μm or larger, 20 μm or larger, 25 μm or larger, 30 μm or larger), and/or 100 μm or less (such as, 90 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less).Such as, in certain embodiments, w is (such as, from 5 μm to 90 μm, from 15 μm to 50 μm, from 20 μm to 50 μm) from 1 μm to 100 μm.In certain embodiments, 1 μm or larger (such as 2 μm or larger, 5 μm or larger, 10 μm or larger, 15 μm or larger, 20 μm or larger, 25 μm or larger, 30 μm or larger) at the width of aperture 224 split shed 225 of y orientation measurement, and/or 100 μm or less (such as, 90 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less).Such as, in certain embodiments, w is (such as, from 5 μm to 90 μm, from 15 μm to 50 μm, from 20 μm to 50 μm) from 1 μm to 100 μm.

Aperture 224 is located on aperture support 234.According to the control signal received from electronic control system 170, aperture support 234 allows aperture 224 translation on the x-y plane.In certain embodiments, aperture support 234 can also allow aperture 224 in a z-direction along the longitudinal axis translation of ion optics 130.In addition, in certain embodiments, aperture support 234 can allow aperture 224 to tilt for x-y plane.Inclination aperture 224 may be used for the longitudinal axis of alignment aperture 224 and the longitudinal axis 132 of ion optics 130.

In certain embodiments, aperture 224 can comprise multiple openings with different in width w.Such as, Figure 15 is the vertical view (in the z-direction) of the dish type opening 224a comprising multiple opening 225a-225g.Aperture 224a is configured, to rotate around the pivoting point 227 of the center superposition with aperture 224a.The center of each opening 225a-225g is located in distance pivoting point 227 same distance place.Thus can select the aperture openings of specific dimensions by rotating aperture disc 224a, making to be located in the path of ion beam 192 by the opening selected, and if expect subsequently, translation aperture disc 224a, to guarantee that opening is correctly aimed at ion beam 192.

Figure 16 is the clavate aperture 224b comprising the multiple opening 229a-229e extending through aperture 224b.Aperture size can be selected by selecting the opening in the 224b of aperture.This selection is carried out in the direction being parallel to arrow 221, to aim at one of opening 229a-229e and ion beam 192 by translation aperture 224b.

Typically, opening 225a-225g and 229a-229e has the diameter can selected by expectation.Such as, in certain embodiments, the diameter of any described opening can be 5 μm or larger (such as, 10 μm or larger, 25 μm or larger, 50 μm or larger) and/or 200 μm or less (such as, 150 μm or less, 100 μm or less).In certain embodiments, the diameter of opening 225a-225g and/or 229a-229e can be (such as, 5 μm to 150 μm, 5 μm to 100 μm) from 5 μm to 200 μm.

In certain embodiments, the device outside aperture can be used to allow the ion in the ion beam 192 of an only part by ion optics 130 and impinge upon on the surface of sample 180.Such as, two vertical gaps sequentially can be placed along the flight path of ion beam.

Astigmatism corrector 218 is usually by its shape, be configured, to reduce or to eliminate the astigmatism in ion beam 192 along the position in the path of ion beam 192 and the current potential that is applied in.Although various device may be used for structure astigmatism corrector 218, the ends of the earth electrode of astigmatism corrector 218 typically between aperture 224 and scan deflection device 219 and 221.Typically, 8 electrodes of ends of the earth astigmatism corrector are divided into 2 groups of 4 electrodes, first controller is configured to the voltage of adjustment 4 electrodes (such as, first group of 4 electrodes, relative to most advanced and sophisticated 186 positive biases) and second controller adjustment other 4 electrodes voltage (such as, second group of 4 electrodes, relative to most advanced and sophisticated 186 negative biass).Electrode from the first and second electrode groups is arranged in an alternating fashion, to form the part of the ends of the earth, part adjacent here has the bias voltage of contrary sign.The layout of electrode forms the delamination tip-field focusing on the ion beam that the longitudinal axis along the ends of the earth is propagated, and defocuses the ion beam from axle.

Usually, each electrode of the ends of the earth can be configured independently, and thus astigmatism corrector 218 allows the sensitive control for ion beam 192.In certain embodiments, put on the current potential of any electrode of astigmatism corrector 218, relative to public external ground, can be-30V or larger (such as,-20V or larger ,-10V or larger ,-5V or larger), and/or 30V or less (such as, 20V or less, 10V or less, 5V or less).

Except aiming at deflector 220 and 222, ion optics 130 also comprises scan deflection device 219 and 221.Scan deflection device 219 and 221 is typically between astigmatism corrector 218 and the second lens 226, although usually, other layout of ion optics 130 interscan deflector 219 and 221 is also possible.

Scan deflection device 219 and 221 is configured, to make the surface of the scanned sample 180 of ion beam 192.Deflector 219, such as, can be configured, and with in x direction deflected ion beam 192, and deflector 221 can be configured, with in y direction deflected ion beam 192.The deflection of the combination produced by deflector 219 and 221 can locate the ad-hoc location of ion beam 192 on sample 180.

Typically, the current potential putting on deflector 219 and 221 is adjusted, to produce the specific deflection of ion beam 192.The current potential be applied in can systematically be changed, to make the sample 180 of the scanned part of scanning beam 192 grid.Such as, in certain embodiments, the current potential putting on deflector 221 increases in a stepwise manner at regular intervals, crosses sample 180 deflected ion beam 192 in y direction with discrete step (such as, line by line).Meanwhile, the current potential putting on deflector 219 is increased in a stepwise manner, crosses sample 180 deflected ion beam 192 in x direction with discrete step (such as, by column).。The speed that the current potential putting on deflector 221 increases can be selected, and make once ion beam 192 is increased by the stepping putting on the current potential of deflector 219 and completes the scanning of crossing all row, then ion beam 192 is deflected to new row in y direction.For each row, the step mode that the identical current potential increased progressively increases can put on deflector 219, with in x direction with the inswept ion beam 192 of discrete step.

Usually, scan deflection device 219 and/or 221 can be formed by multiple electrode.Such as, in certain embodiments, scan deflection device 219 and/or 221 can comprise pair of parallel plate electrode separately.Electrode in deflector 219 can be oriented, to be orthogonal to the direction deflected ion beam 192 of deflection of the ion beam 192 produced by deflector 221.

In certain embodiments, scan deflection device 219 and/or 221 can be more complicated design.Such as, scan deflection device 219 and/or 221 can comprise four pole electrodes and/or ends of the earth electrode.These electrodes can be configured respectively, to provide in an x-y plane in a single direction, or the deflection of ion beam 192 in an x-y plane on more than one direction.

Each electrode member in scan deflection device 219 and 221 can relative to public external ground or just or negative ground be biased.Usually, the voltage putting on each electrode can be-150V or larger (such as ,-100V or larger ,-50V or larger ,-20V or larger) and/or 150V or less (such as, 100V or less, 50V or less, 20V or less).During operation, such as, the voltage putting on each electrode in deflector 219 and 221 can be (such as, from-100V to 100V, from-50V to 50V, from-20V to 20V) from-150V to 150V.

Usually, position and the current potential of the second lens 226 are selected, and make on the surface 181 of the assisted focused ion beam of the second lens 192 to sample 180.The current potential putting on the second lens 226 can be relative to public external ground or for just or be negative usually.In certain embodiments, the current potential putting on the second lens 226 be relative to public external ground-50kV or larger (such as,-40kV or larger ,-30kV or larger), and/or 40kV or less (such as, 30kV or less, 20kV or less).The distance u that second lens 226 and interval, aperture 224 are measured in a z-direction.In certain embodiments, u be 5cm or larger (such as, 10cm or larger, 15cm or larger), and/or 50cm or less (such as, 45cm or less, 40cm or less, 35cm or less, 30cm or less, 25cm or less, 20cm or less).

The distance h (being commonly referred to operating distance) that second lens 226 and sample 180 interval are measured along z-axis.In certain embodiments, h can be 2mm or larger (such as, 5mm or larger, 10mm or larger, 15mm or larger, 20mm or larger) and/or 200mm or less (such as, 175mm or less, 150mm or less, 125mm or less, 100mm or less, 75mm or less, 65mm or less, 55mm or less, 45mm or less).In certain embodiments, h is (such as, from 5mm to 175mm, from 10mm to 150mm, from 15mm to 125mm, 20mm to 100mm) from 2mm to 200mm.Typically, by changing the current potential putting on the second lens 226, h can be adjusted, and to adjust the focussing plane of lens 226, and translation sample 180 (by sample manipulator 140) moves in the new focussing plane of lens 226.The relatively large distance h that microscopic system 200 allows provides many advantages.Such as, the uneven sample with protrusion of surface can use microscopic system to study.In addition, sample can also relative to the main shaft of ion beam 192 with wide-angle tilt.Such as, in certain embodiments, angle between the normal on the surface 181 of sample 180 and the main shaft of ion beam 192 be 5 ° or larger (such as, 10 ° or larger, 20 ° or larger, 30 ° or larger, 40 ° or larger, 50 ° or larger, 60 ° or larger) and/or 85 ° or less (such as, 80 ° or less, 75 ° or less, 70 ° or less, 65 ° or less).In certain embodiments, the angle between the normal on the surface 181 of sample 180 and the main shaft of ion beam 192 is (such as, from 10 ° to 80 °, from 20 ° to 70 °, from 30 ° to 70 °, from 40 ° to 60 °) from 5 ° to 85 °.In addition, relatively large distance h also allows various detector and other device to be located near the incidence zone of the ion beam 192 on closely surface 181, and can allow to detect and leave the particle of sample with solid angle relatively on a large scale.Typically, this allows the detection (such as, using dissimilar detector) of the detection of stronger signal and the signal of number of different types.

In certain embodiments, second lens 226 are shaped as the right corner with 10 ° or larger semi-cone angle and bore (such as, 15 ° or larger, 20 ° or larger, 25 ° or larger) and/or 50 ° or less (such as, 45 ° or less, 40 ° or less, 35 ° or less).In certain embodiments, the semi-cone angle of the second lens 226 is (such as, from 15 ° to 45 °, from 20 ° to 40 °) from 10 ° to 50 °.The semi-cone angle of relatively little lens 226 provides many advantages, comprise sample 180 for ion beam 192 inclination angle in a big way, and detector and other device can by the free spaces of the larger volume near the incident beam spot on the surface 181 of locating wherein.

As discussed above, typically, the He ion substantially only produced by the interaction of one of trimer atom on the summit 187 by He atom and most advanced and sophisticated 186 is by aperture 224.But, in certain embodiments, device in ion optics 130 (such as the first lens 216 and/or aim at deflector 220,222 and/or aperture 224) can be set up, and makes a large amount of parts of the He ion produced by He atom and two trimer atomic interactions by aperture 224.This can such as by selecting the current potential putting on the first lens 216 and/or deflector 220,222 rightly, and/or by change aperture 224 size (such as, as respectively shown in Figure 15 and 16, by selecting different hole openings on hole wheel or rod) realize.In certain embodiments, device in ion optics 130 (such as, first lens 216 and/or aim at deflector 220,222 and/or aperture 224) can be set up, make the He ion of quite a few produced via He gas atom and all 3 trimer atomic interactions by aperture 224.This can such as by selecting the current potential putting on the first lens 216 and/or deflector 220,222 rightly, and/or by change aperture 224 size (such as, as respectively shown in Figure 15 and 16, by selecting different aperture openings on aperture wheel or rod) realize.

Optionally, one or more supplemantary electrodes (such as, lens, deflector and/or other element) can be located along the path of ion optics 130 intermediate ion bundle 192.Additional electrode such as can be located after the second lens 226, maybe can be introduced between existing element.Additional element can relative to most advanced and sophisticated 186 by or just or negative ground be biased, such as to increase or the function of track of the ion energy that reduces in the ion beam 192 in ion optics 130 and/or change ion.Such as, one or more accelerating electrodes can be located near sample 180, so that the ion incidence changed in ion beam 192 energy on sample 180.

As another example, ion optics 130 can comprise (relative to public external ground) post bushing pipe of negative bias, to increase the energy of the ion in ion beam 192 on the surface 181 of sample 180.This pipe can be biased to relative to public external ground-50kV or larger (such as ,-25kV or larger ,-15kV or larger ,-10kV or larger) and/or-1kV or less (such as ,-3kV or less ,-5kV or less).Usually, this pipe can be positioned at any position of the axle 132 along ion optics 130, such as, between aperture 224 and the second lens 226.When ion is by realizing some advantage by speeding-up ion during ion optics 130, comprise such as, reduce the interactional time between similar charged ion, this can help to reduce dispersing of ion beam 192.

In certain embodiments, by biased sample 180, the energy of the ion in the ion beam 192 on the surface 181 of sample 180 can be increased or be reduced (such as, if expect the energy of the ion reduced in ion beam 192, then normal incidence configuration, if or expect the energy of the ion increased in ion beam 192, then negative ground configuration).In the larger incidence angle of ion beam 192, the cylinder asymmetry of the electric field produced by the sample 180 be biased can produce prism class effect, wherein in ion beam 192, the high-octane ion of low-energy ion ratio is deflected larger amount in x and y direction, causes the spot size of ion beam 192 on the surface 181 of sample 180 to increase and other potential less desirable consequence.In certain embodiments, thus, sample 180 is biased the energy of the ion changed in ion beam 192, and the angle between the normal on ion beam 192 and surface 181 is less than 6 ° (such as, are less than 5 °, are less than 4 °, are less than 3 °, are less than 1 °).

Although described some embodiment of ion optics, other embodiment of ion optics also can be used.Exemplarily, described some electrode type (such as ends of the earth electrode), one or more Different electrodes types (such as four pole electrodes) may be used for realizing identical effect.More at large, various different ion-optic system may be used in microscopic system 200.In certain embodiments, such as, ion optics 130 only comprises single lens outside deflector, aperture and other ion optical element.In certain embodiments, ion optics 130 comprises the first and second lens, between the first and second lens, have aperture.

As another example, in certain embodiments, ion optics comprises the first lens, aperture between the second lens and the first and second lens, there is no electrode, and ion optics is designed, what make the first lens can reduce ion beam disperses (such as, ion beam is aimed at substantially) with the longitudinal axis of ion-optic system, a part for ion beam can be blocked by aperture in aperture, and the second lens can help ion beam to be focused to relatively little spot size on the surface of the samples.In such embodiments, the ion arrived in the ion beam of sample surfaces only can produce (such as described above) with the interaction of a trimeric atom mainly through He atom.In certain embodiments, the ion in the ion beam of the arrival sample surfaces of almost equal quantity via each atom of He atom and trimer atom interaction and produce.

As other example, in certain embodiments, ion optics comprises aperture between the first lens, the second lens, the first and second lens, do not have electrode and ion optics is designed, make the first lens can to the centre focus ion beam of aperture split shed, aperture can allow the divergence of ion beam that is focused and by aperture, and the second lens can help ion beam to be focused to relatively little spot size on the surface of the samples.In such embodiments, the ion that the ion beam of sample surfaces can comprise the almost equal quantity produced by each interaction of gas atom and trimeric 3 atoms is arrived.If the summit of most advanced and sophisticated 186 comprises more than 3 atoms (such as, the atom of 5 or more, the atom of 7 or more, the atom of 9 or more), then ion beam can comprise the ion of the almost equal quantity produced with the interaction of each atom on the summit of most advanced and sophisticated 186 via gas atom.

As another example, in certain embodiments, the ion optics aperture comprised between the first lens, the second lens, the first and second lens does not have electrode and ion optics is designed, make the first lens can reduce dispersing of ion beam and guide the low bundle dispersed to aperture, aperture can allow ion in all ion beams substantially by aperture, and the second lens can help ion beam to be focused to relatively little spot size on the surface of the samples.In such embodiments, the ion beam arriving the surface of sample can comprise the ion of the almost equal quantity produced by each interaction of the atom of 3 in gas atom and trimer.If the summit of most advanced and sophisticated 186 comprise more than 3 atoms (such as, the atom of 5 or more, the atom of 7 or more, the atom of 9 or more), then ion beam can comprise the ion of the almost equal quantity produced with the interaction of each atom on the summit of most advanced and sophisticated 186 via gas atom.

As another example, in certain embodiments, ion optics comprises aperture between the first lens, the second lens, the first and second lens, do not have electrode and ion optics is designed, make the first lens can to aperture portion ground focused ion beam, aperture can be blocked from the part ion (but still allowing the relatively large part of the ion in ion beam to pass through aperture) the ion beam that it passes through, and the second lens can help ion beam to be focused to relatively little spot size on the surface of the samples.In such embodiments, the ion beam arriving the surface of sample can comprise the ion of the almost equal quantity produced by each interaction of the atom of 3 in gas atom and trimer.If the summit of most advanced and sophisticated 186 comprise more than 3 atoms (such as, the atom of 5 or more, the atom of 7 or more, the atom of 9 or more), then ion beam can comprise the ion of the almost equal quantity produced with the interaction of each atom on the summit of most advanced and sophisticated 186 via gas atom.

D. tip-tilt and translation mechanism

Most advanced and sophisticated executor 208 is configured to allow tip 186 translation in an x-y plane, and tip 186 is relative to the inclination of the axle 132 of ion optics 130.Figure 17 is the sectional view of a part for microscopic system 200, and microscopic system 200 comprises the embodiment of most advanced and sophisticated 186, supporting component 520 and most advanced and sophisticated executor.Most advanced and sophisticated executor 208 comprises axle 502, vault 504, shoulder 510 and translation device 514.Translation device 514 is connected to axle 520, and axle 502 forms required size, to be fixed in shoulder 510 by opening 516.Axle 502 is also connected to base 508, and base 508 is connected to again assembly 520.Shoulder 510 is positioned at the fixing position relative to vault 504 by the stiction between surface 512 and 513, and translation device 514 is positioned at the fixing position relative to shoulder 510 by the stiction between surface 518 and 519.

Most advanced and sophisticated executor 208 provides tip 186 translation in an x-y plane.In order to translation tip 206, gases at high pressure are introduced into entrance 503.The gases at high pressure being introduced into entrance 503 can be the gas of such as room air.Typically, gas can be introduced into 50 pound per square inches (psi) or larger pressure (such as, 75psi or larger, 100psi or larger, 125psi or large).As introducing the result of gases at high pressure, the z direction that power leaves shoulder 510 is applied in translation device 514.The power applied reduces the frictional force (but not being reduced to zero) between surface 518 and 519, and allows translation device 514 to relocate relative to shoulder 510 by the cross force applied in x-y plane.When translation device 514 is relocated, most advanced and sophisticated 186 translations in an x-y plane.When most advanced and sophisticated 186 at its reposition, providing of gases at high pressure is closed and by using one or more vacuum pumps, the inside of most advanced and sophisticated executor 208 is vacuumized and re-establish the strong stiction between surface 518 and 519.Because this builds strong frictional force again, most advanced and sophisticated 186 are securely fixed in suitable position.

Most advanced and sophisticated executor 208 additionally provides the inclination of tip 186 for ion optics 130.In order to beveled tip 186, gases at high pressure are introduced into entrance 505.The gases at high pressure being introduced into entrance 505 can be the gas of such as room air.Typically, gas can be introduced into 50 pound per square inches (psi) or larger pressure (such as, 75psi or larger, 100psi or larger, 125psi or large).As the result introducing gases at high pressure ,-z the direction that power is leaving vault 504 is applied in shoulder 510.The power be applied in reduces the frictional force (but not being reduced to zero) between surface 512 and 513.Shoulder 510 can be relocated for vault 504 by applying cross force subsequently, to take on 510 in the direction translation indicated by arrow 506.The translation of shoulder 510 corresponds to the relative motion along the curved surface of vault 504.Due to this motion, the angle (corresponding to the inclination angle of most advanced and sophisticated 186) between axle 132 and 207 changes.When the adjustment of the inclination of most advanced and sophisticated 186 completes, the supply of gases at high pressure is closed and by making the inside of most advanced and sophisticated executor 208 vacuumize, the strong electrostatic frictional force between surface 512 and 513 is re-established.Because this builds strong frictional force again, most advanced and sophisticated 186 are securely fixed in suitable position.

In certain embodiments, go out as shown in Figure 17, most advanced and sophisticated executor 208 is configured, and the center of the radius of curvature of vault 504 is overlapped with the position on the summit of most advanced and sophisticated 186.As a result, when most advanced and sophisticated 186 are tilted, so that when changing the angle between axle 132 and 207, in x-y plane, the translation of most advanced and sophisticated 186 does not occur.As a result, most advanced and sophisticated executor 208 can be used to aim at the track of ion and the longitudinal axis of the first lens 216 that produce via the interaction of one of gas atom and sophisticated atomic, and does not cause tip 186 for the translation of the axle of the first lens 216.

In certain embodiments, most advanced and sophisticated executor 208 can be configured, to allow the rotary motion around additional shaft.Such as, in embodiment shown in fig. 17, when gases at high pressure be introduced into entrance 503 thus reduce surface 518 and 519 between frictional force and allow translation device 514 in an x-y plane translation time, by applying suitable moment of torsion for translation device 514, translation device 514 can also rotate around axle 207.This rotation can be independent of, or make an addition to the translation of most advanced and sophisticated 186 and the tilt adjustments of most advanced and sophisticated 186 and carry out.

E. sample stage

Refer again to Fig. 5, microscopic system 200 comprises the sample manipulator 140 of support and localizing sample 180.In response to the control signal from electronic control system 170, sample manipulator 140 can at each x, y and z direction translation sample 180.In certain embodiments, sample manipulator 140 can also responsive control signal and rotary sample 180 in an x-y plane.In addition, in certain embodiments, sample 180 can tilt outside x-y plane in response to suitable control signal by sample manipulator 140.Each these degrees of freedom can be individually adjusted, to realize the suitable orientation of sample 180 relative to ion beam 192.

As described in more detail below, in certain embodiments, by applying relatively little current potential for executor 140, sample manipulator 140 can relative to public external ground or just or negative ground be biased.Such as, in certain embodiments, biased relative to the positive potential of the 5V or larger of public external ground (such as 10V or larger, 20V or larger, 30V or larger, 40V or larger, 50V or larger) can be applied in executor 140, avoids charged He ion to adhere to the surface 181 of sample 180 so that auxiliary.In certain embodiments, be biased (such as relative to the negative potential of public external ground-200V or larger,-150V or larger ,-100V or larger ,-50V or larger ,-40V or larger ,-30V or larger ,-20V or larger ,-10V or larger ,-5V or larger) executor 140 can be applied in, such as accelerate secondary electron (leaving the surface 181 of sample 180 via the interaction of ion and sample 180) so that auxiliary and leave sample, guarantee that the detector that secondary electron can be appropriately configured detected.Usually, the current potential putting on executor 140 can be selected on demand according to the open-assembly time of studied concrete material, He ion current and sample.

F. detector

Detector 150 and 160 is schematically indicated in Figure 5, detector 150 is by the particle on surface 181 (surface of wherein ion beam collision) locating to detect from sample 180, and detector 160 is located, to detect the particle on the surface 183 from sample 180.Usually, various different detector can be used to detect different particles in microscopic system 200, and microscopic system 200 typically can comprise the detector of any desired amt.The configuration of various detector can be selected according to measured particle and measuring condition.In certain embodiments, spectrum resolution detector can be used.Such detector can detect the particle of different-energy and/or wavelength, and resolves particle according to the energy of the particle be respectively detected and/or wavelength.In certain embodiments, spectrum resolution detector comprises and particle can be guided to the device portions in the different district of detector according to the energy of particle and/or wavelength.

The layout of some typical detector and detector is described below.

(i) Everhart-Thornley detector

Everhart-Thornley (ET) detector may be used for detecting secondary electron, ion and/or neutral particle.Figure 18 shows the schematic diagram of ET detector 600, and ET detector 600 comprises particle selection device 601, transition material 602, support 604, photon detector 606 and voltage source 607 and 608.

Particle selection device 601 is formed by electric conducting material.In certain embodiments, such as, particle selection device 601 can be metallic grid or net, and it has the metal filled factor being less than about 30% (such as, be less than 25%, be less than 20%, be less than 10%, be less than 5%).Because grid is open space importantly, so the particle collided on grid can pass through relatively not interruptedly.

In certain embodiments, particle selection device 601 is formed by becket or pipe.Such as, ring or the pipe of particle selection device 601 can be shape be substantially cylinder, have the inside opening allowing particle by ring or pipe.Ring or pipe can be formed by high-conductive metal, such as copper or aluminium.

More at large, particle selection device 601 can be formed by any open-electrode structure comprising the passage that particle passes through.Particle selection device 601 can be formed by one or more electrodes, and the current potential putting on one or more electrode can be selected by expectation according to the type of measured particle usually.

Transition material 602 is formed by the material that can form photon during interaction with charged particle (such as, particle, electronics).Typical material comprises phosphor material and/or scintillator material (such as, crystalline material, such as yttrium-aluminium-garnet (YAG) and yttrium aluminate or phosphate (YAP)).Support 604 to be formed by the material for the photon relative transparent formed by transition material 602.

During operation, voltage source 607 applies the voltage of relatively little size (such as particle selection device 601 (being formed by electric conducting material), 500V or less, such as from 100V to 500V), and voltage source 608 applies the voltage (such as 5kV or larger, 10kV or larger) of relatively large size to transition material 602.ET detector is for measuring in the embodiment from the electronics (such as, secondary electron) of sample 180 wherein, and the symbol putting on the voltage of particle selection device 601 and transition material 602 is positive relative to sample 180.ET detector is for measuring in the embodiment from the ion (such as, secondary ion, scattered ion(s)) of sample 180 wherein, and the symbol putting on the voltage of particle selection device 601 and transition material 602 is negative relative to sample 180.In certain embodiments, sample 180 can also be biased (relative to public external ground), so that auxiliary, the particle from sample 180 is sent to detector 600.Such as, when ET detector is used for measuring secondary electron from sample 180, sample can be negatively biased relative to public external ground.Applying negative potential biases to executor 140 can be particularly useful, such as, when the secondary electron produced in high aspect ratio (such as dark) hole detected in the sample to which or through hole.Can assist relative to the negative potential of public external ground biased makes Accelerating electron for leaving sample outside hole or through hole, makes the detection of electronics more easy.When lacking negative bias, many secondary electrons can reenter sample at the point along hole or through-hole wall, never escape hole or through hole and be detected.

Sample 180 can be positively biased, such as, when ET detector is for measuring the particle from sample.The size of the current potential of the biased sample applied can be 5V or larger (such as, 10V or larger, 15V or larger, 20V or larger, 30V or larger, 50V or larger, 100V or larger).

Charged particle 610 (such as, electronics or ion) from sample 180 is attracted to particle selection device 601, by particle selection device 601, and is accelerated to transition material 602.Charged particle 610 collides with transition material 602 subsequently, produces photon 612.Photon 612 by support 604 and detect by photon detector 606.

Although describe the work of ET detector relative to measuring charged particle, ET detector can also be used for detecting neutral particle, because the particle usually impinged upon on transition material 602 needs not to be charged to produce photon.Particularly, the subatom from sample 180 impinged upon on transition material 602 can produce photon and be detected by photon detector 606.Photon detector 606 can be, such as photomultiplier (PMT), diode, diode array or CCD camera.

ET detector can be positioned any position relative to sample 180, so that detection is neutral or charged particle.Typically, such as, ET detector is located in the second lens 226 adjacent to ion optics 130.Optionally, ET detector can also be located, and makes it to sample 180 slightly to having a down dip (such as, with in Figure 5 for the configuration that the description of detector 150 is similar).

In certain embodiments, ET detector can be located near the surface 183 of sample 180.Such configuration can be expect, such as, when seeking to measure the secondary electron from sample 180 occurred from surface 183 (such as, after being transmitted by sample 180).In such embodiments, ET detector can have the configuration of the configuration similar in appearance to detector 160 in Figure 5.

(ii) photon detector

In order to detect the photon produced by the interaction of ion and sample 180, the standard photon detector of such as PMT can be used.If the luminous flux sent from sample 180 is enough large, then can use the photon detector that sensitivity is lower, such as diode, diode array and CCD camera.

In certain embodiments, photon detector can also comprise the various optical element that can be configured, such as, to isolate the specific light signal and other light signal paid close attention to.Such as, in certain embodiments, photon detector can comprise the optical element of such as filter, to select specific wavestrip in the photon signal sent from sample 180, this can provide the information of the material composition about sample 180.Filter is passable, such as, blocks the photon (such as, by absorbing the photon of undesirably wavelength, by reflecting the photon of less desirable wavelength, by deflecting the photon of less desirable wavelength) of undesirably wavelength.In certain embodiments, optical element can provide frequency spectrum to resolve (such as by spatially dispersing different wavelength, measure the spectrum produced by sample 180), (such as, such as one or more grating diffration element, and/or the refracting element of such as one or more prism, and/or the one or more spectrometer system providing the wavelength of photon to resolve detection).In certain embodiments, photon detector can comprise the polarization manipulation element of such as ripple plate and/or polarizer.These polarization manipulation elements can be configured, to allow only to have and to be arrived PMT by the photon of the polarization state selected, such as, the polarization of the light signal sent from sample 180 is allowed to select detection (such as, in order to the auxiliary crystal orientation information determining sample 180).In certain embodiments, photon detector can also comprise the optical element of such as mirror, lens, beam splitter and other element for redirecting and handle incident photon (such as, in order to increase the solid angle of the photon be detected).

Usually, photon detector can be located, so that in the angle and distance detection of photons of any expectation with sample 180.Such as, in certain embodiments, photon detector can be located, to detect from the photon that sends of 181 (ion beam 192 is by the surfaces of the sample 180 of incidence), surface, or from the photon that surface 183 (with ion beam 192 by the surface of the relative sample 180 in the surface of incidence) sends.Optionally, multiple photon detector can be used and be configured, so that from the surface 181 (surface of ion beam strikes) of sample 180, and 183 (with the surface of the opposite side of ion beam strikes) and/or other surperficial detection of photons.

For some samples, photon is scattered at specific direction according to the selective rule of the two-phonon process occurred in sample 180, and can provide, such as, about the material constituent information of sample 180 from the angle parsing measurement of the photon productive rate of sample 180.

(iii) micro-channel plate detector

In certain embodiments, micro-channel plate detector may be used for amplifying the stream from the secondary electron of sample 180, neutral atom or ion.Microchannel plate is typically formed by the material of such as vitreous silica, and generally includes the passage of a large amount of minor diameters arranged in the form of an array.Particle enters independent passage and collides with conduit wall, produces free electron.Typically, multiple free electron is created when the collision of particle (neutral atom, ion or electronics) and conduit wall.As a result, the cascade electronic signal corresponding to the amplification of input particle signal leaves microchannel plate.

Microchannel plate base detector (it can comprise one or more microchannel plates) can be configured, to detect from the ion of sample 180, secondary electron and/or neutral atom.From the neutral particle that sample 180 is formed, and/or ion (such as secondary ion and atom, scattered ion(s) and a subatom) leaves the surface 181 (surface of ion beam strikes) of sample 180 usually.Thus, configure measure the position being usually located at the position similar in appearance to detector 150 described in figures 1 and 5 from the neutral particle of sample 180 and/or the microchannel plate base detector of ion.But in certain embodiments, neutral particle and/or ion (ion of such as transmission) can be studied.In such embodiments, microchannel plate base detector can be positioned at the position of the position similar in appearance to detector 160 in figures 1 and 5.Secondary electron can or the surface 181 (surface of ion beam strikes) from sample 180 or the surface 183 (surface of the offside of ion beam strikes) from sample 180 be detected, and be configured detection is positioned at the position similar to the position of detector 150 and/or 160 described in figures 1 and 5 from the microchannel plate base detector of the secondary electron of sample 180.

Microchannel plate amplifies input particle signal and converted input signal is output electronic signal.In order to visualization exports electronic signal, microchannel plate base detector can also comprise transition material, screen, photon detector (description see above).

In certain embodiments, microchannel plate is directly fixed on the element of ion optics 130.Figure 19 shows the sectional view of the micro-channel plate detector 620 being directly installed on the second lens 226.Second lens 226 have cone shape, have smooth lower surface 622.Detector 620 is directly installed on surface 622.When sample 180 is exposed to ion beam 192, from the ion of sample 180, secondary electron and/or neutral atom (jointly being indicated by arrow 624) can detect by micro-channel plate detector 620.Detector 620 records the electric current proportional with the particle flux be detected, and it can be transferred into electronic control system 170.

(iv) change-over panel

In certain embodiments, change-over panel can be used to the ion (such as, scattered ion(s), secondary ion) of detection from sample 180 or the neutral particle from sample 180 (such as, once neutral He atom).Typically, change-over panel can be formed by thin foil material, when by incident photon or atomic collision, has high secondary electron productive rate.The example of such material is platinum.Secondary electron productive rate produces the abundance of the secondary electron be easily detected, such as, such as, by the suitable electron detector be configured, as detector 150 and/or 160 (Fig. 1 and 5).

(v) channeltron detectors

Channeltron detectors also may be used for detecting the particle of such as electronics, ion and the neutral atom leaving sample 180.Channeltron detectors works by amplifying particle signal with many internal impacts of the similar mode described by micro-channel plate detector by amplifying.By measuring the particle signal of the amplification exported by channeltron detectors, the measurement from relatively weak secondary electron, ion or the neutral atom flux of sample 180 is possible (such as, using electronic control system 170).When measuring the secondary electron from sample 180, channeltron detectors can be positioned the similar position of detector 150 and/or 160 described in figures 1 and 5.Typically, for from the ion of sample 180 and/or the measurement of neutral particle, channeltron detectors is positioned the similar position, position to the position of Fig. 1 and the detector 150 described in 5 and/or 160.

(vi) phosphor detector

Comprise the phosphor base detector of the thin layer of the phosphor material be deposited on transparent substrates top, and the photon detector of such as CCD camera, PMT or one or more diode, may be used for detecting from the electronics of sample 180, ion and/or neutral particle.Particle hits phosphor layer, from fluorophor cause the transmitting of photon that detects by photon detector.Phosphor base detector can be disposed in the position similar to the position of detector 150 and/or 160 described in figures 1 and 5, depends on the type (see above-mentioned discussion) of measured particle.

(vii) solid state detector

Solid state detector may be used for detecting from the secondary electron of sample 180, ion and/or neutral atom.Solid state detector can by the material of such as silicon, or the transducer that the silicon materials of doping are formed is built.When incoming particle impact microphone, in sensor material, produce electron-hole pair, produce the electric current that can be electronically controlled system 170 and detect.The quantity of the electron-hole pair produced by incoming particle, and the size of the correspondence of thus produced electric current, depend in part on the energy of particle.Thus, solid state detector can be particularly useful for the energy measurement of particle, and when detecting the high energy particle from sample 180 (such as, the He ion of scattering and neutral He atom), this is particularly favourable.

(viii) scintillator detector

Similar in appearance to phosphor base detector, scintillator base detector comprises response and is clashed into by incoming particle (such as electronics, ion or neutral atom) and produce the scintillator material of photon.Suitable scintillator material comprises, such as YAG and YAP.Photon productive rate in scintillator base detector depends on the energy of incoming particle.As a result, scintillator detector can be particularly useful for the energy measurement of particle, and when detecting high energy particle (such as, the He ion of scattering and neutral He atom) from sample 180, this can be particularly favourable.

(ix) energy-probe of ion

Various different detector and detection method can be implemented, to measure the energy (such as, the He ion of scattering) of the ion from sample 180.Electrostatic prism detectors, wherein electricity and/or magnetic field are used to deflect incident ion, and wherein amount of deflection depends on the energy of ion, may be used for space and are separated the ion with different-energy.Magnetic prism detector also may be used for energy according to ion and space isolating ions.Above-mentioned any suitable detector (such as, microchannel plate, channeltron, and other) can subsequently for detecting deflected ion.

Quadrupole detectors also can be used to analyze the energy from the ion of sample 180.In quadrupole detectors, four extremely in radio frequency (RP) field guarantee to have by the ion of the quality selected and energy four extremely in along straight, not deflected track propagation.The ion with different quality and/or energy four extremely in propagate along bending track.In four pole analyzers, the deflected position of ion, can determine the energy of ion.

In certain embodiments, by along ion flight path and place positively biased particle selection device (such as, the silk screen of electric conducting material or grid, or cylinder type metal pipe or ring) before the detectors, and can ion energy be determined.Put on the current potential of particle selection device 601 size can initially time very high (such as, guarantee to avoid ion from sample 180 by its value), and when using suitable detector detect ion (see above-mentioned discussion), the size of current potential can be reduced.Can be used to determine the information relevant to ion energy as the power on stream of ion of arrival detector of function of biased size of putting of particle selection device.

The energy-probe of (x) electronics

Various different detector and detection method can be implemented, to measure the energy (such as, secondary electron) of the electronics from sample 180.Prism detectors may be used for space and is separated the electronics with different-energy, and in prism detectors, electricity and/or magnetic field are used to deflect incident electron, and wherein amount of deflection depends on the energy of electronics.Magnetic prism detector also may be used for space and is separated the electronics with different-energy.Above-mentioned any suitable detector then may be used for detecting deflected electronics.

In certain embodiments, by along electronics flight path and place the particle selection device (such as, the silk screen of electric conducting material or grid, or cylinder type metal pipe or ring) of negative bias before the detectors and can electron energy be determined.The size of the current potential of particle selection device 601 can initially time very high (such as, guarantee to avoid electronics from sample 180 by its value), and when using suitable detector detection electronics (see above-mentioned discussion), the size of current potential can be reduced.Can be used to determine the information of electron energy as the power on stream of electronics of arrival detector of function of biased size of putting of particle selection device.

(xi) flight time detector

Disclosed detector can also be configured above, to measure the information of the flight time of secondary electron, ion and neutral atom.In order to carry out flight time detection, ion beam 192 is at Burst-mode operation.Such as, by promptly changing the current potential putting on one or two deflectors 220 and 222, ion beam 192 can by chopping.Such as by increasing these current potentials, ion beam 192 can, from its usual route turning ion optics 130, make ion beam 192 be blocked by aperture 224 temporarily.If the current potential of deflector 220 and 222 short time before again being increased recovers its normal value subsequently, then the pulse of He ion can be transferred into sample 180.

Meanwhile, detector 150 and 160 can be synchronized with the clock signal from electronic control system 170, and electronic control system 170 is based on the time variations of current potential putting on deflector 220 and/or 222.As a result, He ion pulse send and from the particle of sample 180 detection between the time interval can be accurately measured.From the Given information in the propagation time about the He ion pulse in ion optics 130, the flight time of the particle be detected between sample 180 and detector 150 and/or 160 can be determined.

(xii) angular dependence (-dance) is measured

Except measuring from except the relative abundance of the particle of sample 180 and energy, disclosed detector above angular dependence (-dance) scattered information can use and obtaining.Typically, in order to obtain angular dependence (-dance) information, detector is fixed on the support (such as, runing rest) allowing to move in the gamut of the solid angle of detector around sample 180.Corresponding to the given orientation relative to sample 180 of specific solid angle, the abundance of record particle and/or energy measurement.Detector sequentially relocates in different solid angles and repeats to measure, to determine the angle dependence of measured amount.Such as, in certain embodiments, before the limiting aperture of pin hole can be placed on the detector in the path of the particle be scattered, so that there is the angular range from the measurement of the particle of sample 180 in restriction further.

G. running parameter

Ion beam 192 can have relatively little spot size on the surface 181 of sample 180.Such as, in certain embodiments, the spot size of the ion beam 192 on the surface 181 of sample 180 can have the size (such as, 9nm or less, 8nm or less, 7nm or less, 6nm or less, 5nm or less, 4nm or less, 3nm or less, 2nm or less, 1nm or less) of 10nm or less.In certain embodiments, on the surface 181 of sample 180, the spot size of ion beam 192 can have the size (such as, 0.1nm or larger, 0.2nm or larger, 0.25nm or larger, 0.5nm or larger, 0.75nm or larger, 1nm or larger, 2nm or larger, 3nm or larger) of 0.05nm or larger.In certain embodiments, on surface 181, the spot size of ion beam 192 has from the size of 0.05 to 10nm (such as, from 0.1nm to 10nm, 0.2nm to 10nm, 0.25nm to 3nm, 0.25nm to 1nm, 0.1nm to 0.5nm, 0.1nm to 0.2nm).As used in this, the following reference diagram 20A-20C of spot size determined.To be formed by gold and the island 1700 with the size from 50nm to 2000nm is disposed in carbon surface 1710.Such as, Jin Dao is formed by the vapour deposition of gold on carbon surface.What be suitable for parsing measurement described herein comprises the measurement sample being deposited on Tan Shangjin island, can commercially obtain from such as Structure Probe Inc. (West Chester, PA).Ion microscope works, and makes a part of its moving iron bundle 192 inswept Jin Dao linearly, and this part (arrow 1730) of carbon surface on Jin Dao side.The intensity of secondary electron is as the function of the position of ion beam measured (Figure 20 C).Asymptote 1740 and 1750 is calculated (or drafting), corresponding to carbon and golden average total Abundances, and vertical line 1760 and 1770 is calculated (or drafting), corresponds respectively to 25% of abundance difference and the position of 75% between total abundance asymptote 1740 and 1750.The spot size of ion microscope 200 is the distances between line 1760 and 1770.

Usually, the stream of the ion beam 192 on the surface 181 of sample 180 be 1nA or less (such as, 100pA or less, 50pA or less), and/or 0.1fA or larger (such as, 1fA or larger, 10fA or larger, 50fA or larger, 100fA or larger, 1pA or larger, 10pA or larger).Such as, in certain embodiments, the stream of the ion beam 192 at surface 181 place of sample 180 is (such as, from 10fA to 100pA, from 100fA to 50pA) from 0.1fA to 1nA.In certain embodiments, can expect when Imaged samples to use relatively low line.Such as, in some biology and/or materia medica application, in order to imaging in the sample to which, low stream possibility even more important (such as, in order to reduce the possibility of lesioned sample) is used.In such embodiments, a stream can be used to prepare the gas field ion microscope (such as, the stream of 10fA or larger) used, and homogeneous turbulence not may be used for Imaged samples (such as, being less than the stream of 1fA, such as 0.1fA).

Usually, ion beam 192 has the energy spread (such as, 4eV or less, 3eV or less, 2eV or less, 1eV or less, 0.5eV or less) of the surface 181 place 5eV or less at sample 180.In certain embodiments, ion beam 192 has the energy spread (such as, 0.2eV or larger, 0.3eV or larger, 0.4eV or larger) of the surface 181 place 0.1eV or larger at sample 180.Such as, ion beam 192 can have the energy spread of surface 181 place from 0.1eV to 5eV (such as, from 0.1eV to 3eV, from 0.1eV to 1eV) at sample 180.

Ion beam 192 can have relatively high brightness at surface 181 place of sample 180.Such as, ion beam 192 can have 1 × 10 on the surface 181 of sample 180 ⁹a/cm ²the brightness (such as, 1 × 10 of sr ¹⁰a/cm ²sr or larger, 1 × 10 ¹¹a/cm ²sr or larger).In certain embodiments, brightness can be increased by increasing adjacent to the gas pressure of most advanced and sophisticated 186 and/or the temperature of reduction most advanced and sophisticated 186.As said, the brightness of ion beam is measured as follows.Determined in x with y both direction in the region at the interval of FWHM between extractor 190 and the first lens 216 of the distribution of ion beam 192 intermediate ion track-at the relative little and ion trajectory of the clean electric field in this region close to straight line.100 ion trajectories altogether dropped in the FWHM width of x and y both direction are selected at random from the ion trajectory distribution ion beam 192.Each 100 ion trajectories close to straight line, and are projected back tip 187.At the specified point z along z-axis _ttrack spatial dimension by be parallel to x-y plane and by some a z _tz _tin plane, structure surround the track broadcast of oriented passback and plane Z _tthe circle of minimum diameter in crosspoint assess.The diameter of a circle of minimum diameter is d _s.Typically, for the some z more close to tip 187 _t, d _sless and for the some z more close to sample 180 _t, d _slarger.Specifically putting z _t=Z0, d _sminimum value d0.Namely the spatial dimension being parallel to track in the plane of x-y plane is minimum.At a Z ₀the diameter of a circle d of minimum diameter ₀be called as the virtual source size of microscopic system 200.Then, dispersing and line of the FWHM district intermediate ion bundle 192 of the ion beam 192 between extractor 190 and the first lens 216 is measured, as discussed above.Finally, brightness is calculated as the product of line divided by the three-dimensional angle of divergence of virtual source size and ion beam 192.

Ion beam 192 can have the brightness of relatively high reduction on the surface 181 of sample 180.Such as, ion beam 192 can have 5 × 10 on the surface 181 of sample 180 ⁸a/m ²the brightness (such as, 1 × 10 of the reduction of srV or larger ⁹a/m ²srV or larger, 1 × 10 ¹⁰a/m ²srV or larger).As alleged by this, the brightness of the reduction of ion beam is divided by the average energy of the ion in ion beam in the brightness of the measured position of line, ion beam.

Ion beam 192 can have relatively low etendue at the far-end 193 of extractor 190.Such as, ion beam 192 can have 5 × 10 at the far-end 193 of extractor 190 ^-21cm ²the etendue (such as, 1 × 10 of sr or less ^-22cm ²sr or less, 1 × 10 ^-23cm ²sr or less, 1 × 10 ^-23cm ²sr or less, 1 × 10 ^-24cm ²sr or less).As said, the etendue of ion beam is calculated as the mathematical product of the Reciprocals sums line of brightness.

Ion beam 192 can have the etendue of relatively low reduction at the far-end 193 of extractor 190.Such as, ion beam 192 can have 1 × 10 at the far-end 193 of extractor 190 ^-16the etendue (such as, 1 × 10 of the reduction of cm sr or less ^-17cm ²sr or less, 1 × 10 ^-18cm ²sr or less, 1 × 10 ^-19cm ²sr or less).The etendue of the reduction of ion beam be in the measured position of line, the product of the etendue of ion beam and the average energy charge ratio (energy-to-charge) of ion beam intermediate ion.

Ion beam 192 can have relatively low convergence of corner relative to the surface 181 of sample 180.Such as, in certain embodiments, the half-angle of the convergence of ion beam 192 can be 5mrad or less (such as, 1mrad or less, 0.5mrad or less, 0.1mrad or less), and/or 0.05mrad or larger.As said, the divergence half-angle of ion beam is determined as follows.Be included in the sample on carbon substrate Ding Shangjin island, as described above, be installed in ion microscope 200 and in the translation of z direction, the position of the focus of ion beam 192 be positioned at, being positioned as close to the point of the maximum height of the diameter along Jin Dao.Ion beam 192 is subsequently along the diameter of Jin Dao by rectilinear translation and the size s of the spot of the focusing of ion beam _fmeasured, as described above.Sample subsequently in+z direction by translation, leave s apart from ion optics 130 _z=1 μm, and ion beam 192 along the identical diameter of Jin Dao by linear translation, to measure the defocused speckle size s of ion beam 192 _d.Convergent angle η can be defined as from the measurement trigonometry method of the spot size focused on and defocus and translation distance subsequently,

$\mathrm{\η}=2{\sin }^{-1}\left(\frac{s_d-s_f}{{2s}_z}\right)$

The divergence half-angle of ion microscope 200 is η/2.

Ion microscope 200 can be high reliability.For example, in certain embodiments, He ion source (most advanced and sophisticated 186, extractor 190 and optionally inhibitor 188) can interact with gas atom constantly, to produce ion beam (such as one week or longer time cycle, 2 weeks or longer, one month or longer, two months or longer), do not remove most advanced and sophisticated 186 from system.In certain embodiments, He ion source with gas atom interact produce ion beam time cycle during, 10% or less (such as, 5% or less, 1% or less) has been changed per minute at the stream of the ion beam 192 on the surface 181 of sample 180.

As another example, in certain embodiments, gas field ion source (most advanced and sophisticated 186, extractor 190 and optionally inhibitor 188) can interact with gas atom constantly, to produce ion beam (such as one week or longer time cycle, 2 weeks or longer, one month or longer, two months or longer), total break period is 10 hours or shorter (such as, 5 hours or shorter, 2 hours or shorter, 1 hours or shorter).In such embodiments, gas field ion source can interact with gas atom to produce ion beam (total outage time corresponding to zero hour) constantly in the whole time cycle, but this is optional.Such as, during the time cycle, gas field ion microscope can be there is and do not interact with gas atom and produce the time of ion beam.Such time cycle corresponds to break period.In this time cycle, can to occur once such break period or more than once (such as, 2 times, 3 times, 4 times, 5 times, 6 times, 7 times, 8 times, 9 times, 10 times).Interruption can be due to such as, and planned maintenance, keeps in repair unexpectedly, and/or the shutdown (such as, shutting down all night) between changing shifts.During this time cycle, the summation of break period is total outage time.For example, if having 3 interruptions during the time cycle, each 1 hour, then total outage time is 3 hours.As another example, if only have during the time cycle 1 time interrupt and be 3 little durations, then total outage time is 3 hours.As another example, if there are 2 interruptions during the time cycle, the time of first time interruption is 1 hour and the time that second time is interrupted is 2 hours, then total outage time is 3 hours.In certain embodiments, those times of ion beam are produced when the long ion source of gas and gas atom interact for during the time cycle, 10% or less (such as, 5% or less, 1% or less) has been changed per minute at the stream of surface 181 ion beam 192 of sample 180.

Ion microscope 200 can have relatively good resolution.Such as, in certain embodiments, the resolution of ion microscope 200 can be 10nm or less (such as, 9nm or less, 8nm or less, 7nm or less, 6nm or less, 5nm or less, 4nm or less, 3nm or less, 2nm or less, 1nm or less).In certain embodiments, the resolution of ion microscope 200 can be 0.05nm or larger (such as, 0.1nm or larger, 0.2nm or larger, 0.25nm or larger, 0.5nm or larger, 0.75nm or larger, 1nm or larger, 2nm or larger, 3nm or larger).In certain embodiments, the resolution of ion microscope 200 can be from 0.05nm to 10nm (such as, from 0.1nm to 10nm, from 0.2nm to 10nm, from 0.25nm to 3nm, 0.25nm to 1nm, 0.1nm to 0.5nm, 0.1nm to 0.2nm).As used in this, the resolution of ion beam refers to from using the image that obtains of ion microscope can by the size of minimal characteristic reliably measured.The size of feature is reliably measured, if from 10 images of the feature obtained under condition of similarity, it can be determined in 10% of the actual size of feature or less error, and has the standard deviation being less than the measured size of 5% of the actual size being less than feature.

Ion microscope 200 can be used to the image absorbing good quality in a relatively short period of time.Such as, ion microscope 200 can have 0.25 or larger quality factor (such as, 0.5 or larger, 0.75 or larger, 1 or larger, 1.5 or larger, two or more).As said, quality factor are determined as follows.One smooth sample (its half is formed by silicon (Si) and second half is formed by copper (Cu), has the border of the straight line for crossing sample between material) is located so that border is parallel to y-axis and is oriented.Sample by divide again the surface of sample be 512 pixels take advantage of 512 pixels x-y array and by by pixel ground imaging.During measurement, the residence time of each pixel is 100ns.Total abundance from the secondary electron of sample is measured as the function of the position of the ion beam on the surface of sample.For the image pixel of the Si corresponded in sample, determine Average pixel intensity G ₁, and from the standard deviation S D of Si pixel intensity distribution ₁.For the image pixel of the Cu corresponded in sample, determine Average pixel intensity G ₂, and from the standard deviation S D of Cu pixel intensity distribution ₂.Quality factor calculate according to following equations:

$\frac{G_1-G_2}{\sqrt{{\mathrm{SD}}_1\·{\mathrm{SD}}_2}}$

When being exposed to ion beam 192, the surface 181 of sample 180 can experience relatively little damage.Such as, according to damage test, the surface 181 of sample 180 can have the value of 25nm or less (such as, 20nm or less, 15nm or less, 10nm or less, 5nm or less).As said, damage test carries out as follows.When using the spot size of the ion beam current of sample of 10pA and the ion beam of the sample of 10nm or less, during by ion beam by pixel ground grid scanned sample surperficial, atomic flat silicon (99.99% purity) sample of 4 squares of μm of visual fields is imaged 120 seconds.In order to the object of grid scanning, the visual field of 4 squares μm is broken down into the pel array that 512 pixels take advantage of 512 pixels.The value of damage test corresponds to the ultimate range being etched into the imaging moiety of silicon sample that damage test causes.

Ion microscope 200 can have the relatively large depth of focus.Such as, in certain embodiments, the depth of focus of ion microscope 200 can be 5nm or larger (such as, 10nm or larger, 100nm or larger, 1 μm or larger), and/or 200 μm or less (such as, 100 μm or less, 10 μm or less), in some embodiment values, the depth of focus of ion microscope 200 can from 200 μm to 5nm (such as, from 500 μm to 5nm, from 1mm to 5nm).As used in this, the depth of focus of ion beam is measured as follows.Be included in the Jin Dao that carbon substrate is formed sample (as previously in conjunction with He ion beam spot spot size measurement discussed) be inserted into He ion microscope, and carry out the measurement of He ion beam spot spot size as mentioned above.Repeatedly adjusting along z-axis position of sample, makes the position of the sample producing minimum He ion beam spot spot size be determined.This position along z-axis is called as z _f.He ion beam is at z _fspot size be called as ss _f.Sample subsequently along-z direction relative to z _fwith incremental translational.After incremental translational continuously, carry out the measurement of the spot size of He ion beam (for determining z _fsample on same position).When measured He ion beam spot spot size is 2ss _ftime, the translation of sample is stopped.This position along the sample of z-axis is called as z _u.Then ,+z direction, sample edge is relative to z _uwith incremental translational, and by a z _f.After incremental translational continuously, carry out the measurement of the spot size of He ion beam (for determining z _fsample on same position).When measured He ion beam spot spot size is 2ss _ftime, the translation of sample is stopped.This position along the sample of z-axis is called as z _l.The depth of focus d of He ion microscope _fby d _f=| z _l-z _u| calculate.

In certain embodiments, gas field ion microscope as disclosed in this (such as, He ion microscope) can be used to distinguish element in the sample of the atomic weight (Z value) had closely, use such as secondary electron productive rate, scattered ion(s) abundance, and/or angle is resolved and the detection of the scattered ion(s) of energy resolved.Such as, in certain embodiments, gas field ion microscope may be used for distinguishing the element with atomic weight (Z value) only difference 1.

In certain embodiments, gas field ion microscope as disclosed in this (such as, He ion microscope) may be used for distinguishing element in the sample of the quality had closely, such as, use secondary electron productive rate, scattered ion(s) abundance, and/or angle is resolved and the detection of the scattered ion(s) of energy resolved.In certain embodiments, gas field ion microscope may be used for distinguishing the element of the quality with only difference 1 atomic mass unit or less mass unit (such as, 0.9 atomic mass unit or less, 0.8 atomic mass unit or less, 0.7 atomic mass unit or less, 0.6 atomic mass unit or less, 0.5 atomic mass unit or less, 0.4 atomic mass unit or less, 0.3 atomic mass unit or less, 0.2 atomic mass unit or less, 0.1 atomic mass unit or less).In certain embodiments, sample can have the farmland formed by the material with different average quality (such as alloy).In such embodiments, gas field ion microscope is passable, such as, be used to distinguish the farmland of the material of the quality with only difference 1 atomic mass unit or less mass unit (such as, 0.9 atomic mass unit or less, 0.8 atomic mass unit or less, 0.7 atomic mass unit or less, 0.6 atomic mass unit or less, 0.5 atomic mass unit or less, 0.4 atomic mass unit or less, 0.3 atomic mass unit or less, 0.2 atomic mass unit or less, 0.1 atomic mass unit or less).

H. selectional feature

I () efficient gas uses

In certain embodiments, the utilization ratio of the He gas in microscopic system 200 can be increased for the transmission of the more concentrated He gas of most advanced and sophisticated 206.Typically, not ionizable He gas atom can enter ion optics 130, and this can increase the width of the Energy distribution of the ion in ion beam 192.In addition, low-energy not ionizable He gas atom can participate in the charge exchange interaction with high-energy He ion, and this also can increase the width of the Energy distribution of the ion in ion beam 192.

Thus, in certain embodiments, air delivery system can be designed as provides gas (such as He gas) to the tip 186 in gas field ion source 120 in more scopodromic mode, and remove untapped gas (such as, not ionizable He gas) from system in a more efficient manner.Such as, the schematic diagram of the part of the gas field ion microscope of gas source 110 and vacuum pump 734 is comprised during Figure 21.Gas source 110 comprises length q and diameter n, end at and transmit the dispatch tube 730 of nozzle 736, and vacuum pump 734 includes oral area 732.Nozzle 736 is positioned the distance g on the summit 187 of distance most advanced and sophisticated 186, and inlet portion 732 is positioned the distance 1 on the summit 187 of distance most advanced and sophisticated 186.

In certain embodiments, g can be 10mm or less (such as, 9mm or less, 8mm or less, 7mm or less).Typically, g is 3mm or larger (such as, 4mm or larger, 5mm or larger, 6mm or larger).Such as, g can be from 3mm value 10mm (such as, from 4mm to 9mm, from 5mm to 8mm).

In certain embodiments, 1 can be 100mm or less (such as, 90mm or less, 80mm or less, 70mm or less, 60mm or less, 50mm or less).Typically, 1 is 10mm or larger (such as, 20mm or larger, 30mm or larger, 40mm or larger).Such as, 1 can be (such as, from 30mm to 100mm, from 40mm to 80mm) from 10mm to 100mm.

In certain embodiments, be 10 at the local pressure of position He gas on the summit 187 of most advanced and sophisticated 186 ^-5torr or larger (such as, 10 ^-4torr or larger, 10 ^-3torr or larger, 10 ^-2torr or larger, 10 ^-1torr or larger, 1Torr or larger).Meanwhile, relative to the system adopting He gas background to introduce, the integral pressure of the He gas in microscopic system can be reduced.Such as, the overall He pressure in microscopic system 200 can be 10 ^-4torr or less (such as, 10 ^-5torr or less, 10 ^-6torr or less, 10 ^-7torr or less, 10 ^-8torr or less).

In certain embodiments, distance 1 and the area of section of inlet portion 732 are selected, and make vacuum pump 734 capture not ionizable He atom in the specific solid angle of microscopic system 200.Such as, for the He atom on summit 187 being positioned most advanced and sophisticated 186, be 5 ° or larger (such as, 10 ° or larger, 15 ° or larger, 20 ° or larger, 30 ° or larger, 40 ° or larger) by the solid angle of entrance 732 subtend.

Usually, the ratio of the length q of dispatch tube 703 and the diameter n of pipe 730 can be selected, to control the distribution of the track of the He gas atom being transferred into most advanced and sophisticated 186.Such as, in certain embodiments, ratio q/n ratio can be 3 or larger (such as, 4 or larger, 5 or larger, 6 or larger) and/or 10 or less (such as, 9 or less, 8 or less, 7 or less).In certain embodiments, q/n ratio can between three and ten (such as, between 3 and 9, between 4 and 9, between 4 and 8, between 5 and 8, between 5 and 7).

In certain embodiments, air delivery system can comprise more than one dispatch tube and nozzle.Such as, in certain embodiments, air delivery system can comprise the air delivery tube (such as, 3 or more, 4 or more, 5 or more, 6 or more) of 2 or more.The each of multiple air delivery tube can be located to transmit He gas to most advanced and sophisticated 186 in the mode of relative orientation.As the result using multiple air delivery tube, the local pressure of the He gas of the position on the summit 187 of most advanced and sophisticated 186 can be increased in further.One or more vacuum pumps can be used to remove not ionizable He gas from microscopic system 200.

In certain embodiments, air delivery tube 730 can be introduced into other device of gas.Such as, in certain embodiments, in order to the gas transmission in extractor 190 and/or inhibitor 188, air delivery tube 730 can be formed by one or more paths (such as, path, the path of 4 or more, the path of 6 or more of 2 or more).In certain embodiments, for gas transmit one or more paths (such as, the path of 2 or more, the path of 4 or more, the path of 6 or more) can be arranged in the pillar supporting most advanced and sophisticated 186 (such as, pillar 522a/b and 522).For example, in certain embodiments, extractor 190 can comprise 4 paths transmitted with the gas for most advanced and sophisticated 186.Path can equally be separated and periphery along extractor 190 is radially arranged, makes the opening of each path directly in the face of most advanced and sophisticated 186.The length over diameter of each path is more identical or different than being.

Many advantages can be realized by other elements air delivery tube being introduced gas microscope 200.Such as, use place for gas transmit close to most advanced and sophisticated 186 metal tube 730 can disturb electric field near most advanced and sophisticated 186.Other elements air delivery tube being introduced microscopic system can eliminate such interference.As another example, the space region near most advanced and sophisticated 186 is typically crowded with other device with the electrode of operation microscopic system 200.By other element by air delivery tube 730 drawing-in system, what can reduce near most advanced and sophisticated 186 is crowded.

In certain embodiments, the He gas transmitted via dispatch tube 730 can be pre-cooled, and to make when entering microscopic system 200 its working temperature close to most advanced and sophisticated 186.Such as, a part for dispatch tube 730 can be placed and contact with the supply container of the cooling agent (such as liquid nitrogen) for cooling tip 186.As the result of this thermo-contact, being cooled to and the roughly the same temperature in tip 186 be introduced into before the chamber of locating most advanced and sophisticated 186 of the He gas transmitted by pipe 730.

(ii) surface charge neutralization

Usually, when on He ion incidence to the surface of sample, secondary electron leaves sample.Many secondary electrons leave sample, cause surface to have clean positive charge.Excessive positive charge on the surface of sample can produce many less desirable effects.In certain embodiments, sample material can damage by positive charge.Such as, some material is charge sensitive, and can react tempestuously under existing (such as, exploding) at excessive just (or negative) electric charge.

In certain embodiments, the charged on the surface of sample can limit detector detection and interacts and leave the ability of the secondary electron of sample due to ion beam and sample.Such as, the attraction between the positive charge of sample surfaces and secondary electron can decelerating electron, avoids electronics to arrive detector.

In certain embodiments, the charged of sample surfaces can cause coarse ion beam grid to scan.The deflection of the ion beam of the incidence that the electric field produced by the positive charge on the surface of sample causes and deceleration can reduce the energy of incident ion, and change its track in the mode being difficult to estimate.

If the clean positive charge on the surface of sample becomes enough large, then the electrostatic mirrors of He ion can be played in the surface of sample, and arrive the surface of sample at He ion before, deflection He ion leaves from the surface of sample.

Electron stream to the flood gun on the surface of sample can be transmitted can be used to offset surface charge effect.Figure 22 shows to comprise and configures transmit the part of the gas field ion microscope of the flood gun 840 on the surface 181 of electron beam 842 to sample 180, when He ion beam 192 is incident on surface 181.Electron stream on surface 181 is passable, is usually controlled, makes surface charge effect be balanced the degree to hope by electron beam 842.

Although Figure 22 describes ion beam 192 and electron beam 842 impinges upon on the surface 181 of sample 180 simultaneously, other method also can be used.Such as, before exposed surface 181 to He ion beam 192, flood gun 840 can be configured, to transmit electron beam 842 to sample 180, thus in the sub-surface region of sample 180, produces charge layer 846 (Figure 23).Layer 846 has the mean depth m under surface 181, and layer 846 has the thickness r in the orientation measurement perpendicular to surface 181.Usually, degree of depth m and thickness r, and the density of electronics in layer 846, can by the energy of the electronics in electron beam 842, and the electronics in electron beam 842 is relative to the incidence angle on surface 181, and the total electron dose being sent to sample 180 controlled.

In certain embodiments, when being incident on surface 181, the average energy of the electronics in electron beam 842 is adjustable.Such as, the average energy of electronics can be 500eV or larger (such as, 1keV or larger, 2keV or larger), and/or 20keV or less (such as, 15keV or less, 10keV or less).Such as, when being incident on surface 181, the average energy of the electronics in electron beam 842 can be (such as, from 1keV to 15keV, from 2keV to 10keV) from 500eV to 20keV.

Electronics in electron beam 842 corresponds to the angle between the backbone mark 850 of electron beam 842 and the normal 848 on surface 181 relative to the incidence angle δ on surface 181.Usually, δ (such as, 10 ° or larger, 20 ° or larger and/or 80 ° or less (such as, 70 ° or less, 60 ° or less) that are 0 ° or larger.Such as, δ can be (such as, from 0 ° to 10 °, from 40 ° to 60 °) from 0 ° to 70 °.

In certain embodiments, the total stream being sent to the electronics of sample 180 be 10pA or larger (such as, 100pA or larger, 1nA or larger, 10nA or larger), and/or 100 μ A or less (such as, 10 μ A or less, 1 μ A or less, 500nA or less, 100nA or less).Such as, the total stream being sent to the electronics of sample 180 can be from 10pA to 1 μ A (such as, from 100pA to 100nA, from 1nA to 10nA).

In certain embodiments, m is 10nm or larger (such as, 25nm or larger, 50nm or larger, 75nm or larger, 100nm or larger), and/or 500nm or less (such as, 400nm or less, 300nm or less, 200nm).Such as, m can be (such as, from 25nm to 500nm, from 50nm to 500nm, from 75nm to 400nm, from 100nm to 400nm) from 10nm to 500nm.

In certain embodiments, multiple flood gun can be used.Such as, in certain embodiments, different flood guns can be used to the different part on surface 181 to be exposed to electronics.In certain embodiments, each flood gun can be used to the identical part on surface 181 to be exposed to electronics.Optionally, different flood guns can in different time services.Such as, one or more flood guns can be used to, before surface 181 is exposed to He ion, surface 181 is exposed to electronics (such as, in order to form the lower charge layer in surface), and one or more different flood guns can be used to, when surface 181 is also exposed to He ion, surface 181 is exposed to electronics.In certain embodiments, all flood guns can be used to, before surface 181 is exposed to He ion, surface 181 is exposed to electronics (such as, in order to form the lower charge layer in surface), and flood guns all in certain embodiments may be used for, when surface 181 is also exposed to He ion, surface 181 is exposed to electronics.Other combination also can be used.

Wherein use flood gun can realize the embodiment of surface charge neutralization although described, the neutralization of surface charge can also use collector electrode to collect the secondary electron that is launched and to be returned to the surface of sample thus the clean positive charge reducing surface realizes.With reference to Figure 24, collector electrode 852 is connected to sample 180 via conductor 854.When sample 180 is exposed to He ion beam 192, the secondary electron (representative by arrow 856) launched from the surface 181 of sample 180 incides collector electrode 852.Electronics 856 is transferred back to surface 181 via conductor 854 subsequently thus reduces the positive charge on surface 181.Other collector electrode 852 can be connected to sample 180 to provide further surface charge to neutralize.

In certain embodiments, the combination of one or more collector electrodes and one or more flood guns can be used.Such as, one or more flood guns may be used for, before surface 181 is exposed to He ion, the surface 181 of sample 180 is exposed to electronics (such as, in order to form the lower charge layer in surface), and one or more collector electrodes can be used to the electric charge in when surface 181 is exposed to He ion and surface 181.Other combination is also possible.

In certain embodiments, flood gun 840 can be configured, to transmit electron beam 842 to the sample 180 of low-down energy.Such as, the electronics restrainted in 842 can have the average energy of about 50eV or less.Low-energy electronics has low landing (landing) energy, and which has limited the amount of the negative electrical charge that can accumulate on surface 181.Such as, if the mean electron energy in electron beam 842 is 50eV, once sample 180 charges to the current potential relative to-50eV publicly, then the electronics from flood gun 840 no longer lands on the surface of sample.As a result, by the energy of adjustment from the low-energy electron of flood gun 840, on the surface 181 of sample 180, the maximum negative electrical charge gathered can be controlled.The method can be used to imaging non-conducting material, and less than the deposited atop conductive material layer at non-conducting material to avoid the charged of non-conducting material.The example of the method is illustrated in fig. 25.Ion beam 192 is incident upon on the surface 181 of sample 180, and sample 180 is the dielectric materials (such as, sample 180 is not metal) with relatively low conductivity.Sample 180 support by sample manipulator 140, sample manipulator 140 is biased to the current potential of the public external ground-600V relative to microscopic system 200.The current potential putting on executor 140 produces electric field on the surface 181 of sample 180.Flood gun 840 is configured, the electron beam of the electronics comprising the average energy with 500eV to be sent to the surface 181 near collision ion beam 192.At first, due to put on executor 140 bias voltage caused by the electric field on surface 181 cause from flood gun 840 electronics along such as 843a and 843b track and deflect-electronics do not land on surface 181.But along with the incident positive charge build-up due to He ion is on surface 181, sample 180 becomes charged, reduce by from flood gun 840 the electric field strength that experiences.Charge buildup on the surface 181 of sample 180 is to when effective bias voltage on surface reaches the point relative to-500V publicly, can to land on surface 181 from the electronics of flood gun 840 and in and positive charge on it, follow the track of such as 843c.As a result, by controlling the bias voltage putting on executor 140 and the energy of electronics transmitted by flood gun 840, the positive charge build-up on sample 180 can be controlled.Sample 180, non-conducting material, thus can be imaged and not have gathering of surface charge, otherwise the voltage-contrast effect caused due to surface charge, gathering of surface charge can cause less desirable image comparison.The image of non-conductive and semi-conducting material can be obtained and without the need to the layer of deposits conductive material on sample as charge dissipation layer.

In certain embodiments, flood gun 840 can be configured, to transmit electronics to the sample 180 with negative landing energy, that is, when sample surfaces not having positive charge, electronics does not land on surface 181.When obtaining surface charge due to incident He ion samples 180, start to land on surface 181 from the electronics of flood gun 840, in and positive charge.As a result, the surface 181 of sample 180 remains on almost not charged state.

In certain embodiments, conversion surface can be used to produce secondary electron, and this can be used to neutralize the positive charge on the surface 181 accumulating in sample 180 subsequently.Such as, the conversion surface formed by the material (such as, platinum) with high secondary charges productive rate can be located in close to sample 180.High energy He ion and/or neutral atom, leave sample 180, can clash into conversion surface, produce secondary electron.The secondary electron produced experiences attraction due to the positive surface charge gathered on sample 180.As a result, secondary electron lands on sample surfaces, in and positive charge and reduce electric field caused by surface charge.As a result, when there is the gathering of larger positive surface charge, secondary electron is attracted to the surface of sample 180 more consumingly.This provide the Self-adjusting Mechanism reducing surface charge.

In certain embodiments, change-over panel can be directly mounted to the element of ion optics 130, so that the secondary electron of the surface charge neutralization of sampling 180.Such as, in fig. 26, change-over panel 845 is attached to the surface of the second lens 226.Electronics 842 from flood gun 840 is directed to and is incident on change-over panel, and change-over panel is formed by the material with high secondary electron productive rate.On the surface 181 that He ion beam 192 is incident in sample 180 and, along with the past of time, positive charge build-up on surface 181 ion beam 192 by the district of incidence.The secondary electron 847 produced from change-over panel 845 is attracted to the surface region with excessive positive charge and lands in these districts, neutralizes excessive positive charge.Once excessive surface charge is eliminated, then more secondary electron no longer lands on surface 181.As a result, surface 181 can be maintained at quasi-neutrality state.

Usually, flood gun 840 can be configured or work continuously or off and on.Particularly, during discontinuous operation, flood gun 840 can open and close with the speed expected.Such as, in certain embodiments, flood gun 840 can be opened and closed, so that with the charging neutrality of pixel exposure speed sampling 180.Ion beam 192 can with discrete step grid the surface of scanned sample 180 so that the continuous print part on exposed sample surface.After each several part is exposed, flood gun 840 can be used to neutralize the surface charge in the district be exposed.This corresponds to the charging neutrality of pixel exposure speed.Alternatively, or add ground, flood gun 840 may be used for line scan rate (such as, after the whole line of the discrete parts of sample 180 is exposed to ion beam 192), and/or neutralize with frame rate (such as, after the whole two-dimentional district of the discrete parts of sample 180 is exposed to ion beam 192).

In certain embodiments, flood gun 840 can be used to improve the easiness from the detection of the secondary electron of sample 180.Such as, flood gun 840 can be used to charge layer (such as charge layer 846) to embed in the tagma of sample 180.The negatively charged layers be embedded into causes the electric field on the surface 181 of sample 180.The secondary electron leaving sample 180 produced due to sample 180 and the interaction of incident ion bundle 192 due to the electric field that produces by charge layer 846 and accelerate to leave sample 180, make to become relative more easy by the detection of the secondary electron of the detector configured suitably.

The example of the use of the layer be embedded into using negative electrical charge is schematically shown in Figure 27 A and 27B.In Figure 27 A, ion beam 192 is incident on the surface 181 of sample 180.Multiple secondary electron 2012 is created within several nanometers of the beginning of sample 180.First, many secondary electrons are escaped as free electron 2014, and the detector that free electron 2014 can be appropriately configured detected.But along with the past of time, in incident He ion implantation sample 180, form charged layer 2010 in sample 180.Along with the increase of positive charge clean in layer 2010, secondary electron 2012 attracts to layer 2010 with being increased, and secondary electron less and less 201 to be escaped sample 180 as free electron 2014.As a result, can become more and more difficult by the imaging of the sample 180 of the detection of secondary electron.

The solution of this problem has been shown in Figure 27 B.In the embodiment shown in Figure 27 B, flood gun 840 (not shown) is used to the layer 2016 (such as electronics) of embedding negative electrical charge in sample 180.The layer of the negative electrical charge be embedded into is similar in appearance to the layer 846 in Figure 23.Due to layer 2016, the secondary electron 2021 produced in sample 180 is accelerated leaves sample 180, causes the increase of the quantity of the secondary electron 2014 produced of escape sample 180, and thus improves the secondary electron signal be detected from sample.In fact, layer 2016, as the electrostatic mirrors of secondary electron, improves its detectivity.

Usually, flood gun 840 can be used to implant electronics in the sample to which before analytic sample, and/or flood gun 840 can be used to when Imaged samples inject electronics in the sample to which.In certain embodiments, sample can be exposed to electronics from flood gun 840 with interval (such as, rule interval).This is passable, such as, and the charge level that auxiliary maintenance is relatively consistent.Such as, sample can correspond to time cycle (such as, 100ns) of every pixel residence time and be exposed to electronics from flood gun 840.

(iii) vibration uncoupling

Mechanical oscillation caused by vacuum pump, various moving component and background sound disturbance can affect some performance parameter (such as, image resolution ratio, ion beam spot spot size, stability at sample 180) of gas field ion microscope system 200.In certain embodiments, sample manipulator 140 can be configured, so that decoupling zero sample 180 and the parts of other system 200, reduces the impact of exterior mechanical disturbance thus.Figure 28 show comprise the vibration uncoupling sample manipulator 140 of guiding pin 906 that supports by actuator 908, pin 906 and actuator 908 lay respectively in platform 904.Supporting disk 902 is located in the top of platform 904, and the friction spider 900 supporting sample 180 is placed on dish 902 top.

In order to mobile example 180 in an x-y plane, actuator 908 receives suitable signal from electronic control system 170 and starts and guides pin 906.In response to the signal from actuator 908, guide pin 906 to touch sample 180 and/or spider 900, cause translation in an x-y plane.

Pin 906 is guided typically to be selected as the diameter b in the hole 910 be slightly smaller than in spider 900 at the width j on its summit.Such as, j can be 1mm, and b can be 1.1mm.In addition, spider 900 and dish 902 are selected, and make the stiction between dish 902 and spider 900 large, but can be overcome by the power being put on sample 180 by actuator 908 by guiding pin 906.Guide pin 906 to be formed to reduce the vibration transmission for sample 180 by the mechanical compliant materials can be out of shape under the stress be applied in, but described material is rigid enough to and transmit by actuator 908 applied force for sample 180.

As the result of these system parameterss, the mechanical oscillation being coupled into platform 904 can be partially absorbed and be directed to pin 906 and consumed, and make the vibration of spider 900 very little or do not have.In addition, if guide pin 906 does not apply force to spider 900, then guide pin 906 preferentially slides against spider 900 limit, instead of causes the vibration of spider 900.

In certain embodiments, guide pin 906 can have the shape of basic square-section.When spider 900 in x and/or y direction by guide pin 906 and translation time, rectangular cross sectional shape can be assisted and be guaranteed that the rotation of sample 180 and/or spider 900 does not occur.If sample manipulator 140 tilts (such as relative to the axle 132 of ion optics 130, ion beam 192 is incident on sample 180) with non-perpendicular angle, material then for the formation of spider 900 and/or dish 902 can be selected, and makes to there is higher stiction between these components.Alternatively, or additionally, in certain embodiments, spider 900 and dish 902 can be magnetically coupled, to increase the stiction between these elements.Magnetic Field Coupling can carefully be implemented, to guarantee that magnetic field is localized and not disturbed specimen 180 or knock-on ion bundle 192.

When pin 906 does not activated, guide pin 906 can fully be departed from spider 900.Such as, guide pin 906 applies power for spider 900, and cause spider 900 and sample 180 in an x-y plane after translation, the little recoil of pin 906 can be caused by electronic control system 170, which introduces the space between guide pin 906 and spider 900.As a result, guide pin 906 completely and spider 900 depart from, and avoid the coupling of the mechanical oscillation for spider 900 by pin 906.

Figure 29 depicts the sample clamping assembly 1510 of microscopic system.Sample clamping assembly 1510 reduces the use of bearing and helps to reduce duration of work low-frequency mechanical vibrations in the sample to which.Assembly 1510 comprises the body 1511 with the opening 1512 inserting sample.Body 1511 is connected to arm 1518 by adjustable connector 1522.Arm 1518 uses clamp 1520 to support sample stage 1514.Sample stage 1514 comprises the surface dish 1516 with hole 1524.

Assembly 1510 can be connected to ion microscope, makes the hole 1524 on most advanced and sophisticated 186 directed sample stages 1514.Body 1511 can be formed by the suitable rigid material of such as hardened steel, stainless steel, phosphor bronze and titanium.Body 1511 can be sized and shape, to adapt to the concrete needs of application.For example, can selective body 1511 size and dimension be used for microscopic system disclosed herein.During operation, sample can be introduced into assembly 1510 by opening 1512.

Sample stage 1514 is supported along adjustable connector 1522 by the arm 1518 being connected to body 1511.Adjustable connector 1522 allows moving both vertically of arm 1518.Arm 1518 and sample stage 1514 can move in the vertical direction and be locked in specific position.Connector 1522 can, by pneumatic or vacuum control, make arm 1518 and platform 1514 can be locked in the upright position of expectation.Connector 1522 optionally can comprise the connector of other type.

Sample stage 1514 uses clamp 1520 to be connected to arm 1518.Arm 1518 can have the axle extended internally, and makes the clamp 1520 of sample stage 1514 can fastening axle.Clamp 1520 can, by pneumatic or vacuumizing, make platform 1514 be tilted.Clamp 1520 can be controlled, and makes platform 1514 be tilted to the position of expectation.In certain embodiments, after arriving the position expected, clamp 1520 can be tightened up, and sample stage 1514 is locked in the obliquity of expectation.

Sample stage 1514 also comprises the surface dish 1516 with opening 1524.Sample can be placed on dish 1516 and sample position control system can be introduced into by opening 1524 so that the sample in the plane of displacement disc 1516.In certain embodiments, coiling 1516 can around its central rotation so that by expecting to rotate and the mobile sample be positioned on the surface of dish.Dish 1516 can be formed by suitable rigid material, comprises pottery, glass and polymer.

Figure 30 depicts the sample clamping assembly of microscopic system.The sample clamping assembly of Figure 30, similar in appearance to the sample clamping assembly of Figure 29, has the spider 1600 on the surface being positioned over dish 1516.Spider 1600 can have and allows it to be located in pillar on the top of opening 1524.Optionally, spider 1600 can have the opening in the part on surface.Spider 1600 can be formed by suitable rigid material, comprises pottery, glass and polymer.

At the duration of work of microscopic system 200, sample 180 can move in a z-direction, tilt, translation in x-y plane, and rotation.If sample 180 is tilted and inclination angle (such as, the angle between the normal to a surface of ion beam 192 and sample 180) is relatively large, then by the sample that tilts may on the whole visual field of microscopic system 200 out-focus.As a result, the image of the sample obtained under these conditions can for focus alignment and at center and fuzzy perpendicular to the district outside sloping shaft.

These can by when being compensated by the focal length of change lens 226 during scanned for ion beam 192 sample 180 surperficial.In order to carry out this correction, sample manipulator 140 can transmit the tilt angle information of sample 180 to electronic control system 170.As an alternative, tilt angle information manually can be inputted by user interface by system manipulation person.Electronic control system 170 can per sample 180 orientation determine one group of voltage correction, to be applied to the second lens 226, thus dynamically change the focal length of lens 226 when ion-beam scanning being crossed sample 180 surperficial of inclination.

In addition, the sample of inclination lateral dimension due to the sample of inclination on a planar surface projection and be twisted due to the difference of the distance for optics 130.Such as, the lateral dimension of the sample surfaces of inclination can represent shorter than its actual value, because sample 180 is relative to the orientation of ion beam 192.Another example is the trapezoidal distortion distortion of image.Effect is that rectangular characteristic is twisted, and makes the image of rectangle show trapezoidal distortion in shape at it.

These by when by scanned for ion beam 192 sample 180 surperficial, can adjust the scan amplitude of scan deflection device 219 and 221 and are compensated.In order to carry out this correction, electronic control system 170 can obtain the information at the inclination angle about sample 180 in the same manner as described above.Electronic control system 170 can per sample 180 inclination determine the adjustment of the scan amplitude putting on scan deflection device 219 and 221, the deflection of ion beam will be adapted to during the sample 180 of scanned for ion beam 192 inclination surperficial, to obtain the unwrung image on the surface of the sample 180 tilted with box lunch.As an alternative, these two twisted effects can be corrected by the digital manipulation of the image of distortion.

(iv) existence of neutral particle and double-electric ion in ion beam is reduced

As discussed above, neutral particle (such as, He atom) can enter the ion optics 130 of microscopic system 200 from gas field ion source 120 as the neutral atom of unionization.Such neutral particle can affect the performance of microscopic system negatively.Thus, in certain embodiments, the existence of the neutral particle reduced in ion beam 192 is expected.Double-electric He ion (He ²⁺) also can be generated only in gas field ion source 120, or by the He atom dual ionization near most advanced and sophisticated 186, or by the collision between He ion.The focus characteristics of double-electric He ion is different from the electro-ionic focus characteristics of single lotus, and the double-electric ion existed in ion beam 192 can cause spot size larger on sample 180 and other less desirable effect.

The method reducing the quantity of the neutral particle in ion beam 192 relates to the probability that reduction neutral particle enters ion beam.Such method can relate to, such as, use for most advanced and sophisticated 186 directed gas transmission (discussion see above) to reduce the overall existence of not ionizable He gas atom in microscopic system 200.

The other method reducing the quantity of the neutral particle in ion beam 192 relates to removes neutral particle after neutral particle is present in ion beam 192 from ion beam.The method can relate to use electrostatic lens element and carry out deflect ions, space isolating ions and neutral particle in ion optics 130.Such as, Figure 31 shows wherein deflector 220 and is biased from the longitudinal axis 132 of ion optics 130, and the ion optics 130 that wherein additional deflector 223 is arranged.He ion beam 192 comprises He ion 192a and He atom 192b.In order to be separated He ion 192a and He atom 192b, the current potential putting on deflector 223 is adjusted, to cause the deflection of He ion 192a in x direction.He atom 192b does not affect by deflector 223, and is not thus deflected.He atom 192b subsequently intercept by gatherer 1016, gatherer 1016 avoids He atom 192b through hole 224.The current potential putting on deflector 220 and 222 is also adjusted, and the track of He ion 192a is aimed at again with the longitudinal axis 132, and a part of He ion 192a is passed hole 224 and is incident on the surface 181 of sample 180 as ion beam 192.

Other technology also may be used for removing neutral particle from ion beam.Typically, such technology relates to the ion made in electricity consumption and/or magnetic core logical circuit deflection ion beam, and does not deflect neutral particle.In certain embodiments, the combination in electricity and magnetic field can be used, so that the energy correlation space compensating the ion caused from the ion deflecting ion optics 130 is separated.In addition, various asymmetric ion column geometry (such as, curved ion post) can be used to be separated He atom and ion.

Such as, in Figure 32, the curved post configuration of ion optics 130 can be used to be separated He atom, single charged He ion and double-electric He ion.Ion beam 192 enters optics 130, propagates along the direction tilted relative to the axle 132 of ion optics 130.Ion beam 192 comprises neutral He atom, He ⁺ion and He ²⁺ion.Current potential is applied in deflector 223, the He in deflected ion beam 192 ⁺ion, makes by after deflector 223, He ⁺ion is propagated along axle 132, as ion beam 192a.But neutral atom is not deflected when passing deflector 223.Neutral atom thus with He ⁺ion space is separated, provide the beam of neutral atoms 192b that intercepts by gatherer 1016b.He ²⁺ion ratio He ⁺the degree of ion deflecting is larger, and space is separated single and double charged ion, and provides He ²⁺the ion beam 192c of ion.He ²⁺ion beam 192c intercept by gatherer 1016c.As a result, the ion beam 192a occurred from ion optics 130 only comprises He substantially ⁺ion.

Figure 33 shows and is separated He atom, He ⁺ion and He ²⁺another embodiment of the ion-optic system of ion.Ion-optic system shown in Figure 33 comprises for mutually isolated He atom, He ⁺ion and He ²⁺ion, and the electricity of prism class effect and the sequence without dispersion in magnetic field are not contributed for the particle beams.Ion-optic system comprises the series of 3 deflectors 223a, 223b and 223c, and the series of 3 deflectors 223a, 223b and 223c is configured, to deflect and to guide He ⁺ions across ion optics 130, makes substantially only to comprise He ⁺the ion beam 192a of ion occurs from ion optics 130.The deflected and position after each deflector of beam of neutral atoms 192b intercept by gatherer 1016b.Double-electric He ion ratio He ⁺ion deflecting obtains larger, and multiple He ²⁺bundle 192c intercept by gatherer 1016c.As a result, He atom, He ⁺ion and He ²⁺ion is spatially separated mutually, and He ⁺ion is directed to sample 180, and as ion beam 192, and less desirable Shu Chengfen is blocked in ion optics 130.

In certain embodiments, the use in magnetic field can cause having identical charges, but the space corresponding to the track of the ion of the isotopic ion beam 192 of difference of the gas introduced by gas source 110 is separated.For some gas of such as He, these gases have the isotope (such as, being greater than 90% relative abundance) of dominant Lock-in, because the separation effect in magnetic field is typically little.But lack dominant other gas isotopic for the isotope with 2 or more Lock-ins, such effect can be larger.As a result, in certain embodiments, isotope-separation apparatus (such as, for avoiding less desirable isotope through the stop of the length of ion optics 130) can be used.In certain embodiments, the gatherer 1016 being used to block neutral atom or double-electric ion also may be used for blocking less desirable isotope in ion beam 192.

The type of particle

The interaction of ion beam and sample can cause dissimilar particle to leave surface by various interaction as described below.Such particle comprises secondary electron, auger electrons, scattered ion(s), neutral particle, x-ray photon, IR photon, optical photon, UV photon, secondary ion and a secondary neutral particle.The particle of one or more type can be detected and analyze, to determine the one or more dissimilar information about sample.The optical information of the material constituent information in (sub-surface) district under the surface of the topographical information on the surface of sample, the material constituent information on the surface of sample, sample, the crystalline information of sample, the voltage contrast information of sample surfaces, the voltage contrast information of the sub-surface region of sample, the magnetic information of sample and sample is comprised about the information of such type of sample.As used in this, the surface of term sample refers to until the volume of the degree of depth of 5nm or less.

A. secondary electron

Secondary electron, as said, is send from sample nucleic and have the electronics of the energy being less than 50eV.Usually, secondary electron sends from sample surfaces with multiple angle and energy range.But, total abundance of the information paid close attention to the most normally secondary electron is (with energy resolved secondary electron information, or angle parsing secondary electron information is compared) because as explained below, total abundance of secondary electron can provide the information about sample surfaces just.

Secondary electron can use and one or morely can detect the suitable detector (discussion see the above-mentioned type about detector) of electronics and be detected.If use multiple detector, then all detectors can be all the detectors of identical type, or can use dissimilar detector, and usually can be configured by expectation.Detector can be configured, so that the surface 181 (surface of ion beam strikes) of sample 180 is left in detection, the surface 183 (surface on the offside of ion beam strikes) of sample 180 or both (see above about the discussion of detector configuration) secondary electron.

The secondary electron signal be detected can be used to form the image of sample.Usually, ion beam is scanned by grid on the visual field on the surface of sample, and secondary electron signal in each grating step (the independent pixel corresponding in image) is measured by one or more detectors.Usually, each detector remains on the fixing position relative to sample, when ion beam is scanned by grid on the visual field on the surface of sample.In certain embodiments, but one or more detectors can move relative to sample.Such as, if simple detector is used, then can produce the angle relevant information of sample relative to sample mobile detector.

In certain embodiments, the total abundance of detection secondary electron can provide the topographical information about sample.The total abundance of secondary electron of given position from the teeth outwards depends on usually in this gradient relative to the surface of ion beam.Usually, higher in total abundance of gradient larger part (that is, from the incidence angle larger part of the ion beam of the surface normal measurement) secondary electron on the surface relative to ion beam.Thus, the change of the total abundance of the secondary electron as the function of the position of ion beam on sample surfaces, can be relevant to the change of surfaces slope, provides the information of the pattern on the surface about sample.

In certain embodiments, total abundance of detection secondary electron can produce the material constituent information (such as, element information, chemical environment information) about sample.In such embodiments, information relates generally to the surface of sample.Usually, each element in given chemical environment or material have a specific intrinsic secondary electron productive rate.As a result, total abundance of the secondary electron of given position depends on the material existed in this position usually from the teeth outwards.Therefore, as the change of total abundance of the secondary electron of the function of the position of the ion beam on the surface of sample, can be relevant to the element existing for the surface of sample and/or material, the material constituent information on sampling surface.In certain embodiments, the concrete material in sample can be identified according to the quantitative measurment of the secondary electron productive rate from sample.Such as, when being exposed to He ion beam under controlled conditions, the material of such as Al, Si, Ti, Fe, Ni, Pt and Au has known secondary electron productive rate.Ion microscope (such as, gas field particle microscope) can be calibrated, to identify existence and the relative abundance of the various different materials in studied sample according to the known secondary electron productive rate for various material.Such as, the secondary electron productive rate of various material is shown in tablei.In He ion beam vertical incidence, and measure this productive rate under the mean ion energy of 21keV.Under non-perpendicular incidence angle, such as, shown in tablei productive rate typically adjust by the multiplication factor of the incident tangent of an angle of ion beam that corresponds on the surface of the samples.Describe in the example of the correspondence that other experiment condition is described below.

Table I

Material	Z	M(amu)	The productive rate of secondary electron
				Aluminium	13	27.0	4.31
Silicon	14	28.1	2.38
				Titanium	22	47.9	3.65
Iron	26	55.8	3.55
				Nickel	28	58.7	4.14
Copper	29	63.4	3.23
				Indium	49	114.8	4.69
Tungsten	74	183.8	2.69
				Rhenium	75	186.2	2.61
Platinum	78	195.1	7.85
				Gold	79	197.0	4.17
Plumbous	82	207.2	4.57

In certain embodiments, total abundance of detection secondary electron can produce voltage contrast information, and this can provide again the information about the element on the surface of sample and/or the conductive characteristic of material and/or current potential.Total abundance of the secondary electron of given position on the surface of the samples depends on the electrical characteristics of the material existed on the surface of sample usually.Usually, when being exposed to ion beam, along with the past of time, the lower material of conductivity along with the time trend towards in the past become charged, and when being exposed to ion beam, along with the past of time, the higher material of conductivity along with the trend becoming charged in the past of time lower.Thus, such as, for the past of the lower material of conductivity along with the time, the total abundance of secondary electron of the given position of sample surfaces trends towards reducing (because more surface charge causes less secondary electron escape sample), and for the higher material of conductivity along with the total abundance of secondary electron of the given position of the past sample surfaces of time trends towards experiencing less reduction (surface charge due to less).As a result, the change as total abundance of the secondary electron of the function of the ion beam location of sample surfaces can be relevant to the conductivity of the material of this position, the voltage contrast information on sampling surface.

The lower voltage-contrast effect in surface can be provided by the He ion become in the sub-surface region embedding sample.As composition graphs 27A and 27B describe, the lower He ion in surface can avoid the secondary electron escape sample surfaces produced in the sample to which.Thus, charged under the surface of sample that the contrast of the secondary electron of sample can cause owing to the He ion by incidence.

The information provided by these technology can be used to the ion beam test of semiconductor article.Such as, voltage-contrast measurement may be used for determining, due to the presence or absence of the electrical connection between following part, when being exposed to ion beam, whether the part of electronic installation and/or circuit is in different current potentials, and thus whether described device and/or circuit correctly work.

In certain embodiments, the total abundance detecting secondary electron can the crystalline information of sampling.Whether total abundance of secondary electron can aim at the crystal structure of sample according to ion beam and change (such as, being parallel to one of unit vector describing lattice to aim at).If ion beam is aimed at the crystal structure of sample, ion then in ion beam usually can run through and enters given distance in sample and relative not high with the probability that sample atoms is collided (being commonly referred to tunnelling), causes total abundance of lower secondary electron.If on the other hand, ion beam is not aimed at crystal structure, then the ion in ion beam usually can run through and enters given distance in sample and not relative with the probability that sample atoms is collided low, causes total abundance of higher secondary electron.Thus, the change as total abundance of the secondary electron of the function of sample surfaces ion beam location can be relevant to the crystalline information of the material of this position.Such as, can there is the district of sample surfaces, wherein total abundance of secondary electron is substantially identical.Such district can such as have identical crystal orientation, and the size in district can provide crystallite dimension and/or crystal size information (such as, in the Polycrystalline of domain comprising many orientations), and/or the information of the strain regions about sample (being amorphous or crystallization) can be provided, because the size of the total abundance of the secondary electron for the material of given chemical analysis (such as, elementary composition, material composition) strain of material can be depended on.

In certain embodiments, the abundance detecting secondary electron can the magnetic information of sampling.Total abundance of secondary electron can depend on the size in the magnetic field adjacent to sample surfaces.Such as, magnetic field in certain embodiments, adjacent to sample surfaces changes due to the magnetic domain in the sample that sample surfaces produces local magnetic field.In certain embodiments, apply magnetostatic field by source, external magnetic field, and the magnetic domain in sample produces local magnetic field at sample surfaces, causes the change of the external magnetic field of applying.In arbitrary situation, the change of the local magnetic field of sample surfaces is passable, such as, changes the track of the secondary electron from electromagnetic radiation.The change of secondary electron track can correspond to the increase of the total abundance of secondary electron, when the track of secondary electron be changed make more secondary electron be directed to detector time, or the change of secondary electron track can correspond to the reduction of the total abundance of secondary electron, when the track of secondary electron be changed more secondary electron is directed to leave detector time.

For some samples, the contrast come across in the secondary electron image of sample can be the mechanism due to above-mentioned two or more.In other words, the secondary electron image of some sample can comprise the contrast of part caused by the voltage-contrast change in the pattern change in sample surfaces, the material composition change in sample surfaces, sample surfaces, the crystallization change in sample surfaces and/or the magnetic variation in sample surfaces.Thus, advantageously combine from the information measuring information that secondary electron total abundance obtains and obtain from the particle measuring other type passable, so that qualitative and/or isolate the contribution of these one or more mechanism quantitatively.Be discussed in more detail this possibility below.

Secondary electron imaging technique can be applied to various dissimilar sample.The example of such material is semiconductor article, the wafer of such as composition, and wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Secondary electron imaging technique can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.More at large, secondary electron imaging technique can be used to the ion beam Test Application of various semiconductor article.Optionally, the method can similarly for the object of mask repairing.

Another example of the sample classification of secondary electron imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of the sample classification of secondary electron imaging technique can be used to be read/write structure for data storing.Other additional example of the material type of secondary electron imaging technique can be used to be biomaterial and biopharmaceutical material.

The secondary electron produced by being exposed to He ion beam is used to carry out many advantages that Imaged samples can provide the secondary electron imaging with respect to other technology (such as SEM).Such as, the spot size of the He ion beam on sample can be less than the spot size of the electron beam from SEM.As the result of less spot size, the district being exposed to the sample of He ion beam is more carefully controlled than the district be exposed in SEM.

In addition, usually, because He ion ratio electronics weight, thus scattering events in sample unlike by easily disperseing He ion scattering scattered electrons.As a result, incident He ion on the surface of the samples with compared with the electronics in SEM, can in less interaction volume with the interaction of sample.As a result, the secondary electron that (such as He ion microscope) detects in gas field ion microscope, compared with the secondary electron in the SEM with similar spot size, can come from less region.As a result, the secondary electron produced by He ion beam compared with the secondary electron produced in SEM, can correspond to sample surfaces more localize inquire after (such as, have less material behavior laterally average).

In addition, He ion source additionally provides the degree of depth of the focus larger than electron source.Result, the image of the sample using ion microscope to obtain (such as, gas field ion microscope) compared with the comparable image obtained from the secondary electron in SEM, can illustrate along the orientation measurement perpendicular to sample surfaces, the sample of greater part that focuses on.

He ion beam can also the more sensitive contrast mechanism of secondary electron image of sampling, because compared with when to cause secondary electron to leave sample surfaces with the interaction of sample due to electron beam, the larger scope of the secondary electron productive rate for different materials that can obtain when causing secondary electron to leave sample when the interaction due to ion beam and sample.Typically, such as, for incident beam, the secondary electron productive rate of the versatile material of such as semiconductor and metal is from 0.5 to 2.5 change.But, for be exposed to He ion beam identical material secondary electron productive rate can from 0.5 to 8 change.Thus, use gas field ion microscope (such as He ion microscope) compared with comparable SEM system, the identification of different materials can be carried out more accurately from secondary electron image.

B. auger electrons

As said, auger electrons is the following electronics produced.Electronics in the shell of intratomic is removed thus forms room, fills the release of room along with energy subsequently by the diatomic electronics from higher shell.This energy is by being called that another electronics of auger electrons is released.Usually, auger electrons is launched from the surface of sample with the angle of a scope and energy.But the energy (resolving auger electrons information with angle to compare) of the information paid close attention to the most normally auger electrons, because as explained below, the energy of auger electrons can provide the information about sample surfaces just.Auger electrons can use one or more can with energy-resolving manner detect electronics suitable detector (see above about the discussion of the type of detector) be detected.If use multiple detector, all detectors can be the detectors of identical type, or can use dissimilar detector, and usually can press desired configuration.Detector can be configured, so that the surface 181 (surface of ion beam strikes) of sample 180 is left in detection, the surface 183 (surface on the offside of ion beam strikes) of sample 180 or both (see above about the configuration of detector) auger electrons.In order to improve the signal to noise ratio of the auger electrons be detected, expect to use the detector can collecting the solid angle of relatively large auger electrons.Additionally or alternatively, adjacent to sample surface and can by the electron collection optical device of electronic guidance detector (such as, electrostatic lenses) can be used (such as, in order to increase effective solid angle of the detection of auger electrons).

Usually, the material constituent information (such as, element information, chemical environment information) that auger electrons can produce sample is detected.In such embodiments, information is relevant to the surface of sample with preponderating.Usually, for each element in given chemical environment or material, the auger electrons sent by element or material has specific energy and maybe can be with.As a result, the energy of given position auger electrons depends on the material existed in this position usually from the teeth outwards.Thus, as the change of the energy of the auger electrons of the function of the position of ion beam on sample surfaces, can be relevant to the change of the element that sample surfaces exists and/or material, the material constituent information on sampling surface.

Auger electrons imaging technique can be applied to the sample of various different classification.The example of the classification of such material is semiconductor article, the wafer of such as composition, this wafer can comprise such as by insulating material matrix around multiple electric conductors.Optionally, the method similarly can be used to the object that mask is repaired.Another example of the sample classification of auger electrons imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of auger electrons imaging technique can be used to be read/write structure for data storing.Other additional example of the material type of auger electrons imaging technique can be used to be biomaterial and biopharmaceutical material.

Use the interaction due to sample and He ion beam and the auger electrons that leaves surface carrys out the auger electrons imaging of Imaged samples with respect to other technology (such as SEM), many advantages can be provided.Such as, the spot size of the He ion beam on sample can be less than the spot size of the electron beam from SEM.Due to less spot size, the district being exposed to the sample of He ion beam is more carefully controlled than the district exposed in SEM.

In addition, usually, because He ion ratio electronics weight, thus scattering events in sample unlike by easy dispersion He ion scattering scattered electrons.As a result, incident He ion on the surface of the samples can interact with sample in less interaction volume than the electronics in SEM.As a result, the auger electrons that (such as He ion microscope) detects in gas field ion microscope can come from less district than from the auger electrons in the SEM with similar spot size.Result, the auger electrons on surface is left compared with the auger electrons produced in SEM by the reciprocation of sample and He ion beam, can correspond to sample surfaces more localize inquire after (such as, have less material behavior laterally average).

In addition, He ion source additionally provides the degree of depth of the focus larger than electron source.Result, the image of the sample using ion microscope to obtain (such as, gas field ion microscope) compared with the comparable image obtained from the auger electrons in SEM, can illustrate along the orientation measurement perpendicular to sample surfaces, the sample of greater part that focuses on.

For auger electrons detection, compared with electron beam, another advantage using ion beam is when an electron beam is used, and auger electrons is detected on the baseline of back scattered electron, and uses ion beam, and back scattered electron does not exist.As a result, when collecting auger electrons relatively in a small amount, the signal to noise ratio of the auger electrons of relatively high detection can be obtained, the time quantum that this auger electron that can reduce to obtain relative good quality when using ion beam from sample spends.

C. scattered ion(s)

As said, when interacting from the ion of ion beam (such as, He ion) and sample, scattered ion(s) is produced, and is scattered from sample and leaves ion (such as, He ion) simultaneously.Because scattered ion(s) can move to the surface of sample and very low from the probability of electromagnetic radiation from the sub-surface region of sample, so the information on the usual sampling surface of scattered ion(s).As below description specifically, when detecting scattered ion(s), the concrete layout of detector to depend on the type expecting the information obtained usually.

In certain embodiments, the topographical information of sample surfaces can be obtained by the scattered ion(s) of detection.Figure 34 A depicts the not same district detection scattered ion(s) from surface usually, to determine the embodiment of the method for the topographical information of sample surfaces.Particularly, Figure 34 A shows sample 7010, and this sample 7010 has the district 7012,7014 and 7016 respectively with surface 7013,7015 and 7017.Scattering pattern 7020,7030 and 7040 represents the angle distribution from the ion of surface 7013,7015 and 7017 scatterings respectively, when ion beam is vertically incident thereon.As shown in figure 34 a, each scattering pattern 7020,7030 and 7040 is longitudinal cosine type distributions.Figure 34 B depicts and comes from pattern effect and the distribution (being dash line and dotted line respectively) of the relative intensity 7042 and 7052 of the scattered ion(s) detected respectively by detector 7041 and 7050.Thus, such as, assuming that sample 7010 is formed by same material over its entire surface, from detector 7041 with 7050 relative total abundance distribution may be used for the pattern determining sample 7010.As an alternative, assuming that the pattern of sample 7010 is known, the contribution (relative intensity 7042 and 7052) being then attributable simply to the total abundance for scattered ion(s) of the detection of pattern can be removed from total abundance of the scattered ion(s) of detection, to determine the contribution of total abundance of the scattered ion(s) for detection owing to other effect (such as, varying across the material on the surface of sample 7010).Although detector can press expected location relative to surface, in certain embodiments, for the detector system shown by Figure 34 A, topographical information obtains from the He ion in large angle of scattering scattering.For example, in certain embodiments, topographical information from scattered ion(s) passes through detecting scattered ion(s) relative to 60 °, the direction of ion beam or the angle of larger (such as, 65 ° or larger, 70 ° or larger, 75 ° or larger) and determined.Although Figure 34 A depicts the use of two detectors, in certain embodiments, single detector is used (such as, detector 7041 or detector 7050).As an alternative, in certain embodiments, can be used more than 2 (such as 3,4,5,6,7,8) individual detector.Usually, when multiple detector is used to detection scattered ion(s), detector separates for its solid angle relative to the surface of sample is mutually equidistant.Can allow to detect the surface characteristics relative to two orthogonal directions of the nominal plane of sample surfaces relative to the use more than 2 detectors (such as, 4 detectors) of sample surfaces symmetry location.

Figure 35 A-35I usually depicts and detects scattered ion(s) to determine the various embodiments of the method for the topographical information of sample surfaces from the different district on surface.Particularly, Figure 35 A, 35D and 35G respectively illustrate sample 8050, and this sample 8050 has the district 8052,8054,8056 and 8058 respectively with surface 8053,8055,8057 and 8061.As shown in Figure 35 A, 35D and 35G, surface 8055 and 8059 tilts relative to surface 8053,8057 and 8061.Scattering pattern 8070,8090 and 80110 represent respectively from surface 8053,8057 and 8061 scatterings ion angle distribution, when ion beam vertical incidence thereon time.As shown in Figure 35 A, 35D and 35G, each scattering pattern 8070,8090 and 80110 is longitudinal cosine type distributions.Scattering pattern 8080 and 80100 represents the angle distribution from the ion of surface 8055 and 8059 scatterings, when ion beam is vertical with 8058 relative to district 8054.As shown in Figure 35 A, 35D and 35G, because ion beam is not normally incident on surface 8055 and 8059, so the angle distribution of scattering pattern 8080 and 80110 is not longitudinal cosine type distribution.

Figure 35 B and 35C depicts when hemispherical detector (can resolve scattered ion(s) in angle, frequency spectrum resolves scattered ion(s), or both) 80120 is used to detection scattered ion(s), the gross production rate of scattered ion(s) and the relative abundance of scattered ion(s) be detected.As shown in Figure 35 C, in the relative abundance of the ion be detected when using detector 80120, there is shadow effect.Thus, such as, assuming that sample 8050 is formed by same material over its entire surface, the relative abundance distribution from detector 80120 can be used to the pattern determining sample 8050.As an alternative, assuming that the pattern of known sample 8050, the contribution for total abundance (relative abundance in Figure 35 D) being then attributable simply to the scattered ion(s) be detected of pattern can be removed from total abundance of the scattered ion(s) be detected, to determine the contribution (such as, varying across the material on the surface of sample 8050) owing to the total abundance for the scattered ion(s) be detected of other effect.

Figure 35 E with 35F depicts when the roof detector 80130 scattered ion(s) to relative little acceptance angle is used to detection scattered ion(s), the gross production rate of scattered ion(s) and the relative abundance of the scattered ion(s) be detected.As shown in Figure 35 F, because the scattering productive rate entering the acceptance angle of detector 80130 significantly less in district 8054 and 8056 (although, as higher in these districts in the gross production rate at the scattered ion(s) shown in Figure 35 E), the relative abundance of scattered ion(s) reduces in district 8054 and 8056.Thus, such as, assuming that sample 8050 is formed by same material over its entire surface, then the relative abundance distribution from detector 80130 can be used to the pattern determining sample 8050.As an alternative, assuming that the pattern of known sample 8050, the contribution (relative abundance in Figure 35 D) being then attributable simply to the total abundance for the scattered ion(s) be detected of pattern can be removed from total abundance of the scattered ion(s) be detected, to determine the contribution (such as, varying across the material on the surface of sample 8050) owing to the total abundance for the scattered ion(s) be detected of other effect.

Figure 35 H with 35I depicts when the roof detector 80140 scattered ion(s) to relative large acceptance angle is used to detect the ion be detected, the gross production rate of scattered ion(s) and the relative abundance of the scattered ion(s) be detected.As shown in Figure 35 I, by selecting the suitable acceptance angle of detector 80140, the relative abundance of the scattered ion(s) be detected is substantially identical on sample.The change of total abundance of the scattered ion(s) be detected is by the effect (such as, varying across the material on the surface of sample 8050) outside changing owing to surface topography.

In certain embodiments, the detection of scattered ion(s) can be used to the material constituent information determining sample surfaces.A kind of such method relates to the total abundance measuring scattered ion(s).Total abundance of scattered ion(s) can use single detector (such as hemispherical detector) to detect, this detector is configured to detect the scattered ion(s) on the surface 181 (surface of ion beam strikes) leaving sample 180, or use multiple detector to detect, described multiple detector is configured to detect the scattered ion(s) on the surface 181 (ion beam clashes into the surface on the surface of sample with an angle and energy range) leaving sample 180.Usually, the probability of scattering of He ion (and total abundance of the He ion of thus scattering, assuming that not from the impact of other factors, such as, pattern change in sample surfaces) square become roughly direct ratio with He ion from the atomic number (Z value) of the surface atom of its scattering.Thus, for example, when copper (atomic number 29) line attempting to distinguish in semiconductor article and silicon (atomic number 14), the total abundance from the He ion of the scattering of the copper atom on the surface of semiconductor article is about 4 times of total abundance of the scattered ion(s) of the silicon atom on surface from semiconductor article.As another example, when tungsten (atomic number 74) bolt attempting to distinguish in semiconductor article and silicon (atomic number 14), the total abundance from the He ion of the scattering of the tungsten atom on the surface of semiconductor article is about 25 times that are scattered total abundance of He ion of the silicon atom on surface from semiconductor article.As another example, when gold (atomic number 79) district of attempting to distinguish in semiconductor article and silicon (atomic number 14), the total abundance from the He ion of the scattering of the gold atom on the surface of semiconductor article is about 25 times of total abundance of the scattered ion(s) of the silicon atom on surface from semiconductor article.As other example, when the indium (atomic number 49) attempting to distinguish in semiconductor article and silicon (atomic number 14), the total abundance from the He ion of the scattering of the phosphide atom on the surface of semiconductor article is about 10 times of total abundance of the scattered ion(s) of the silicon atom on surface from semiconductor article.

By detect scattering He ion (can with total abundance detect be combined or alternative total abundance detect use) determine that the other method of the material constituent information of sample surfaces relates to the He ion measuring scattering with energy resolved and angle analysis mode.Such as, go out as shown in Figure 36, He ion beam 192 focuses on the surface 181 of sample 180 by the second lens 226.He ion 1102 is from surperficial 181 scatterings and detected by detector 1100.Detector 1100 is designed, so that for each angle ε in the acceptance angle of detector 1100, knows angle and the energy of the He ion of the scattering be respectively detected.By measuring angle and the energy of the He ion of scattering, the quality of the atom on the surface of the He ion of scatter scatters can be calculated according to following relationship:

$\frac{E_s}{\mathrm{Ei}}=1-\frac{2M_{\mathrm{He}}{M}_a}{(M_{\mathrm{He}}+M_a)2}(1-\cos {\mathrm{\θ}}_s)$

Wherein E _sthe energy of the He ion of scattering, E _ithe projectile energy of He ion, M _hethe quality of He ion, θ _sangle of scattering, and M _ait is the quality of the atom of scattering He ion.

Detector 1100 is passable, such as, is energy resolved phosphor base detector, energy resolved scintillator base detector, solid state detector, energy resolved electrostatic prism base detector, electrostatic prism, energy resolved ET detector or energy resolved microchannel.Usually, expect that detector 1100 has significant acceptance angle.In certain embodiments, detector is fixing (such as, annular detector).In certain embodiments, detector 1100 can the scope of an inswept solid angle.Although described the system of the He ion of the scattering of detection energy resolved and the angle parsing comprising single detector, such system can comprise many (such as, 2,3,4,5,6,7,8) individual detector.Often, multiple detector is used to be expect, because it can allow the larger acceptance angle of the scattering He ion detected.

In certain embodiments, the total abundance detecting the He ion of scattering can the crystalline information of sampling.Whether total abundance of the He ion of scattering can aim at the crystal structure of sample according to ion beam and change.If ion beam is aimed at the crystal structure of sample, ion then in ion beam usually can penetrate the given distance in sample and do not carry out colliding the probability of (being commonly referred to tunnelling) with sample atoms relative high, causes total abundance of the He ion of lower scattering.If on the other hand, ion beam is not aimed at crystal structure, then the ion in ion beam can penetrate given distance in sample and not relative with the probability that sample atoms is collided low usually, causes total abundance of the He ion of higher scattering.Thus, the change as total abundance of the He ion of the scattering of the function of sample surfaces ion beam location can be relevant to the crystalline information of the material in this position.Such as, can there is the district of sample surfaces, total abundance of the He ion of wherein scattering is substantially identical.Such district is passable, such as, there is identical crystal orientation, and the size in district can provide crystallite dimension and/or crystal size information (such as, in the Polycrystalline of domain comprising many orientations), and/or the information of the strain regions about sample (being amorphous or crystalline state) can be provided, because for given chemical analysis (such as, elementary composition, material composition) the size of the total abundance of He ion of scattering of material can depend on the strain of material.

Alternatively or additionally, the crystalline information of sample surfaces can by the district on surface is exposed to ion beam (and not grid ion beam) and the pattern measuring the He ion of scattering subsequently (such as, similar in appearance to due to from being exposed to the back scattered electron of sample surfaces of electron beam and the Kikuchi pattern obtained and obtaining.The pattern of the He ion of scattering can be analyzed, to determine, such as, is exposed to the orientation of the material of the specimen surface positions of ion beam, spacing of lattice and/or crystal type (such as, body-centered cubic, face-centered cubic).

Scattered ion(s) imaging technique may be used for various dissimilar sample.The example of such material is semiconductor article, such as patterned wafer, and this wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Scattered ion(s) imaging technique can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.Optionally, the method can similarly for the object of mask repairing.Another example of the sample classification of scattered ion(s) imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of scattered ion(s) imaging technique can be used to be read/write structure for data storing.The additional example that can use the classification of the material of scattered ion(s) imaging technique is biomaterial and biopharmaceutical material.

Usually, when sample surfaces is exposed to the electron beam of the type used in traditional SEM, scattered ion(s) is not formed, and the crystalline information that thus can not obtained by the He ion of scattering of detection or the such SEM of material constituent information can be obtained.This is the remarkable advantage of gas field described herein microscope (such as, He ion microscope) relative to traditional SEM.

The measurement (such as, He ion microscope) of the scattered ion(s) of use gas field ion microscope described herein can provide many advantages relative to traditional Rutheford backscattering measurement mechanism.Spot size on the surface of the sample that incident He ion can be focused can be less than the spot size (typical spot size be 100 μm to 1mm or larger) of traditional Rutherford backscattering measurement mechanism significantly, allows the material constituent information on the surface of sample than more accurately localizing of realizing with traditional Rutherford backscatter device.In addition, gas field ion microscope described herein (such as, He ion microscope) allows by the scanned sample surfaces of pixel ground grid, and Rutherford backscattering measurement mechanism does not have this ability.This can reduce the cost relevant to the material constituent information of the sample surfaces of each position on surface and/or complexity.

D. a neutral particle

As said, neutral particle be when ion beam and sample interact and from ion beam ion (such as, He ion) neutral particle that produces when leaving sample as not charged neutral particle (such as, not charged He atom).Contrast with the He Ion Phase of scattering, a He atom is the probe of the sub-surface region of the sample of relative sensitive.As used in this, sub-surface region be the district of the sample of 5nm or darker under sample surfaces (such as, 50nm or darker under 25nm or darker, sample surfaces under 10nm or darker, sample surfaces under sample surfaces), with 1000nm under sample surfaces or more shallow (such as, under sample surfaces under 500nm or more shallow, sample surfaces under 250nm or more shallow, sample surfaces 100nm or more shallow).Usually, the investigation depth of ion beam increases along with the increase of ion energy.Thus, in order to determine the darker sub-surface information of sample, the ion beam of higher-energy can be used.By absorbing multiple He atomic lens of sample with different ion beam energies (investigation depth), the depth distribution of material constituent information can be obtained.In certain embodiments, X ray chromatography builds (tomographicreconstruction) algorithm and/or technology can be applied to depth-related information so that the X ray chromatography carrying out the structure of sample is built again again.

Usually, material constituent information based on the detection of a He atom can use the detection of total abundance, energy resolved/angle is resolved, or both detections, use detector arrangement as described in the corresponding technology of the above-mentioned He ion relative to scattering, and use the identical mathematical relationship described by the above-mentioned He ion for scattering and determine.But typically, the detector for a He atom can detect neutral species.The example of such detector comprises microchannel plate, channeltron and scintillator/PMT detector.

One time neutral particle (such as, He atom) technology may be used for various dissimilar sample.The example of the material of such type is semiconductor article, such as patterned wafer, and wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Neutral particle technology can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.Optionally, the method can similarly for the object of mask repairing.Another example of the sample classification of a neutral particle imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of a neutral particle imaging technique can be used to be read/write structure for data storing.Other additional example of the material type of a neutral particle imaging technique can be used to be biomaterial and biopharmaceutical material.

Usually, when sample surfaces is exposed to the electron beam of the type used in traditional SEM, one time neutral particle is not formed, and the crystalline information that thus can not obtained by the He ion of scattering of detection or the such SEM of material constituent information can be obtained.This is the remarkable advantage of gas field described herein microscope (such as, He ion microscope) relative to traditional SEM.

E. photon

The typical photon paid close attention to comprises x-ray photon, UV photon, light photon and IR photon.As said, IR photon has to be greater than 700nm to 100, and the photon of the wavelength of 000nm is (such as, from 1.2 × 10 ^-5keV to 1.7 × 10 ^-3keV), light photon has from the photon of the wavelength being greater than 400nm to 700nm (such as, from 1.8 × 10 ^-3keV to 3 × 10 ^-3keV), UV photon be there is the wavelength being greater than 10nm to 400nm photon (such as, from 3.1 × 10-3keV to 125eV) and x-ray photon is the photon (such as, from 125eV to 125keV) of the wavelength had from 0.01nm to 10nm.Usually, such photon from sample surfaces with an angle and energy/wavelength range transmission.But the information paid close attention to the most is the wavelength of photon and/or energy (resolving photon information with angle to compare) normally, because as explained below, the wavelength of photon and/or energy can provide the information about sample surfaces just.Photon can use one or more can resolve with wavelength or energy-resolving manner detection of photons suitable detector and be detected (discussion see about type photodetector).If multiple detector is used, then detector can be all the detector of identical type, or can use dissimilar detector, and usually can by desired configuration.Detector can be configured, so that the surface 181 (surface of ion beam strikes) of sample 180 is left in detection, the surface 183 (surface from the offside of ion beam collision) of sample 180 or both (see above about the discussion of detector configuration) photon.In order to improve the signal to noise ratio of the photon be detected, can expect to use the detector can collecting the photon of relatively large solid angle.Additionally or alternatively, system can comprise surface adjacent to sample and can by one or more optical element (such as, one or more lens, one or more mirror) (such as the increasing effective solid angle of the detection of the photon be detected) of detector used by photon guiding.

Usually, the energy of detection of photons and/or wavelength can produce the material constituent information (such as, element information, chemical environment information) of sample.In such embodiments, information relates generally to the surface of sample.Usually, for each element in given chemical environment or material, the photon sent by element or material has specific energy/can be with and wavelength/wavestrip.As a result, the energy of the photon sent from the given position on surface and wavelength depend on the material existing for this position usually.Thus, the energy of photon or the change of wavelength, can be relevant to the change of the element that the surface of sample exists and/or material as the function of the position of ion beam on sample surfaces, the material constituent information on the surface of sampling.

Alternatively or additionally, detection of photons, can obtain the material constituent information of sample by determining the going the sharp time of specimen material.This can be implemented, and such as, by making ion beam pulses so that the short time makes sample be exposed to ion beam, measures time of spending of detection of photons subsequently, and what this was relevant to the specimen material launching photon goes the sharp time.Usually, each element in given chemical environment or material have and specifically go the sharp time.

The crystalline information of sample can use the photon detection in conjunction with polarizer obtained, because the polarization of photon can depend on the crystal orientation of material in sample.Thus, by using polarizer, can be determined by the polarization of the photon of electromagnetic radiation, the information relevant to the crystal orientation of sample is provided.

Usually, the information in the photon be detected of being included in is by the information on the mainly surface of sample.But because photon can be escaped from the sub-surface region of sample, the photon be detected can comprise the information of the sub-surface region being relevant to sample.Thus, the photon be detected can be used to the optical characteristics determining sample.Such as, by the energy of the intrafascicular ion of steer ions, and thus its investigation depth, and determine the corresponding impact of the intensity for the photon be detected, can study sample for the transparency of photon.Intensity as the photon be detected of ion energy (investigation depth) function can produce about the information of sample for the transparency of photon.

Photon imaging technology may be used for various dissimilar sample.The example of such material is semiconductor article, the wafer of such as composition, and this wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Photon imaging technology can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.Optionally, the method can similarly for the object of mask repairing.Another example of the sample classification of photon imaging technology can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of photon imaging technology can be used to be read/write structure for data storing.Other additional example of the material type of photon imaging technology can be used to be biomaterial and biopharmaceutical material.

Use the photon produced by being exposed to He ion beam to carry out the photon imaging (such as SEM) of Imaged samples with respect to other technology, many advantages can be provided.Such as, the spot size of the He ion beam on sample can be less than the spot size of the electron beam from SEM.Due to less spot size, the district being exposed to the sample of He ion beam is more carefully controlled than the district be exposed in SEM.

In addition, usually, because He ion ratio electronics weight, thus scattering events in sample unlike by easy dispersion He ion scattering scattered electrons.As a result, incident He ion on the surface of the samples can interact with sample in less interaction volume than the electronics in SEM.As a result, the photon that in gas field ion microscope, (such as He ion microscope) detects can come from less district than the photon had in the SEM of similar spot size.As a result, the photon produced by the interaction of sample and He ion beam than the photon produced in SEM can correspond to sample surfaces more localize inquire after (the less transverse direction such as, with material behavior is average).

In addition, He ion source also provides the larger depth of focus than electron source.Result, use ion microscope (such as, gas field ion microscope) image of sample that obtains compared with the image that can contrast obtained from the photon in SEM, can illustrate along the orientation measurement perpendicular to sample surfaces, the larger part of sample that focuses on.

F. secondary ion

As said, secondary ion is the ion of the state-of-charge formed when ion beam and sample interact to remove monatomic or polyatom nucleic from sample.Interaction between incident ion bundle and sample can produce secondary ion.Typically, when service quality is greater than inert gas ion (Ar ion, Ne ion, Kr ion, the Xe ion) of He, the method is more effective.

By the calculating of the quality of particle be detected, the detection from the secondary ion of sample can the material constituent information of sampling.Usually, this information corresponds to the material of sample surfaces.In certain embodiments, the quality (after ionization) of secondary ion is determined, uses flight time and quality to resolve the combination of detector (such as four pole mass spectrum instrument).The detection of such secondary ion can be carried out as follows.By changing the current potential of the ion optical element put in ion optics, ion beam is at Burst-mode operation.The pulse of incoming particle is incident upon on the surface of sample.The current potential determining to switch ion optical element with the clock signal opening and closing the speed of ion beam be also used as detector reference clock signal (see above about the discussion of detector), in this approach, secondary ion can be accurately determined from sample to the flight time of detector.

According to the flight time of the secondary ion be detected, the distance (such as, the distance between detector and sample) of its movement and its energy, the quality of particle can be calculated, and the type of chemical species (such as, atom) can be identified.This information is for determining the material constituent information of sample.

Secondary ion imaging technique can be applied to various dissimilar sample.The example of such material is semiconductor article, the wafer of such as composition, and this wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Secondary ion imaging technique can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.Optionally, the method can similarly for the object of mask repairing.Another example of the sample classification of secondary ion imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of secondary ion imaging technique can be used to be read/write structure for data storing.Other additional example of the material type of secondary ion imaging technique can be used to be biomaterial and biopharmaceutical material.

When sample surfaces is exposed in the electron beam of the type used in traditional SEM, secondary ion does not produce usually, and the information of material composition that the secondary ion thus using such SEM to pass to be detected can obtain.This is the significant advantage of gas field ion microscope described herein (such as, He ion microscope) relative to traditional SEM.

G. two neutral particles

Secondary neutral particle to interact the neutral particle of the not charged state produced to remove monatomic or polyatom nucleic from sample when ion beam and sample.Interaction between incident ion bundle and sample can produce secondary neutral particle.Typically, when service quality is greater than inert gas ion (Ar ion, Ne ion, Kr ion, the Xe ion) of He, the method is more effective.Usually, in order to assess the information that can obtain from secondary neutral particle, before detection, particle is ionized (such as, bringing out ionization by laser induced ionization, electronics).

By the calculating of the quality of particle be detected, the detection from the secondary neutral particle (after ionization) of sample can the material constituent information of sampling.Usually, this information corresponds to the material of sample surfaces.In certain embodiments, use flight time and quality to resolve the combination of detector (such as four pole mass spectrum instrument), determine the quality (after ionization) of secondary neutral particle.Such neutral particle (after ionization) detection can be carried out as follows.By changing the current potential of the ion optical element put in ion optics, ion beam is at Burst-mode operation.The pulse of incoming particle is incident upon on the surface of sample.Determine conversion ions gasifying device (such as, laser, electron beam) and/or the clock signal of speed of current potential of ion optical element be also used as detector reference clock signal (see above about the discussion of detector), in this approach, the flight time of secondary neutral particle from sample to detector (after ionization) can be accurately determined.

According to the flight time of the secondary ion be detected, the distance (such as, the distance between detector and sample) of its movement, and its energy, can calculate the quality of particle, and can identify the type (such as atom) of chemical species.This information is for determining the material constituent information of sample.

Secondary neutral particle imaging technique can be applied to various dissimilar sample.The example of such material is semiconductor article, the wafer of such as composition, and this wafer can comprise, such as, by the matrix of insulating material around multiple electric conductors.Secondary neutral particle imaging technique can be used to the defect in recognition device, such as, incomplete electrical connection between conductor, and/or the electrical short between circuit element.Optionally, the method can similarly for the object of mask repairing.Another example of the sample classification of secondary neutral particle imaging technique can be used to be metal and alloy.Such as, the image comprising the sample of the composite material of such as alloy may be used for the surface distributed determining each material in sample.The another example of secondary neutral particle imaging technique can be used to be read/write structure for data storing.Other additional example of material type that can use secondary neutral particle imaging technique is biomaterial and biopharmaceutical material.

When sample surfaces is exposed in the electron beam of the type used in traditional SEM, secondary neutral particle does not produce usually, and the information of material composition that the secondary neutral particle thus using such SEM to pass to be detected can obtain.This is the significant advantage of gas field ion microscope described herein (such as, He ion microscope) relative to traditional SEM.

Typical apply

A. semiconductor manufacturing

I () is summarized

Semiconductor manufacturing typically relates to preparation and comprises and be sequentially deposited and process to form the article of the multilayer of the material of integrated electronic circuit, integrated circuit component and/or different microelectronic devices.Such article typically comprise relative to each other accurately locates (such as, usually in the magnitude of several nanometer) various feature (such as, the circuit line formed by electric conducting material, fills with the trap of non-conducting material, the district that formed by electricity semiconductor-on-insulator material).The position of given feature, size (length, width, the degree of depth), composition (chemical analysis) and relevant characteristic (conductivity, crystal orientation, magnetic characteristic) can have important impact for the performance of article.Such as, in some instances, if when these one or more parameters are outside appropriate scope, article can be underproof, because article cannot by expectation work.Result, usually for each step, there is very good control during being desirably in semiconductor manufacturing, and each step advantageously had in a manufacturing process can monitor the instrument of the manufacture of semiconductor article to study the position of the one or more feature of each stage at semiconductor fabrication process, size, composition and correlation properties.As used in this, term semiconductor article refers to the integrated electronic circuit, integrated circuit component, microelectronic device or the article that are formed during manufacturing the technique of integrated electronic circuit, integrated circuit component, microelectronic device.In certain embodiments, semiconductor article can be flat-panel monitor or a photronic part.

The district of semiconductor article can be formed by dissimilar material (conduction, non-conductive, electrical semiconductor).Typical electric conducting material comprises metal, such as aluminium, chromium, nickel, tantalum, titanium, tungsten and comprise the alloy (such as Al-zn-mg-cu alloy) of these one or more metals.Typical electrically non-conductive material comprises boride, carbide, nitride, oxide, phosphide, silicide, the sulfide (such as, nickle silicide, boron monoxide, tantalum germanium, tantalum nitride, tantalum silicide, tantalum nitride silicon and titanium nitride) of one or more metals.Typical electrical semiconductor material comprises silicon, germanium and GaAs.Optionally, electrical semiconductor material can be doped (p doping, n doping) to improve the conductivity of material.

As mentioned above, usually, the manufacture of semiconductor article relates to the multilayer sequentially depositing and process material.In the deposition/process of given material layer, typical step comprises imaging article (such as, determine that the feature of the expectation that will be formed should by the position of locating), deposit suitable material (such as, electric conducting material, electrical semiconductor material, electrically non-conductive material) and etching to remove unnecessary material from some position article.Often, photoresist, such as polymer photoresist, be deposited/be exposed to suitable radiation/optionally etched so that auxiliary position and the size controlling given feature.Typically, photoresist is removed in one or more subsequent process steps, and usually, final semiconductor article does not desirably comprise the photoresist of perceived amount.

Gas field ion microscope described herein (such as, He ion microscope) can be used to the semiconductor article studying various step (such as, each step) in manufacturing process.Particularly, by the particle (discussion see above) of the particle or number of different types that detect and analyze a type, gas field ion microscope (such as, He ion microscope) topographical information on the surface determining semiconductor article can be used to, the material constituent information on the surface of semiconductor article, the material constituent information of the sub-surface region of semiconductor article, the crystalline information of semiconductor article, the voltage contrast information on the surface of semiconductor article, the voltage contrast information of the sub-surface region of sample, the magnetic information of semiconductor article, and/or the optical information of semiconductor article.

Use ion microscope described herein or ion beam can provide various different advantage, this can reduce the time relevant to the manufacture of semiconductor article, cost and/or complexity usually.Relatively high resolution, relatively little spot size, relatively few less desirable specimen breakdown, relatively few less desirable deposition of material and/or injection, the imaging of relative high-quality within the relatively short time, relatively high output is comprised to using ion microscope described herein or the relevant typical advantage of ion beam.

Be discussed below the example of some technique in semiconductor manufacturing.

(ii) maskless lithography

Semiconductor article typically uses photoetching process to prepare, photoetching process relates to the layer of placement photoresist (such as, polymer photoresist, such as polymethyl methacrylate (PMMA) or epoxy radicals photoresist, allyl diglycol carbonate, or photosensitive glass) on the surface, material described in composition, some district of photoresist is made to be (and some districts are not against corrosion for etchant) against corrosion for etchant, the district non-against corrosion of etching material, deposit suitable material (such as, one or more electric conducting material, one or more non-conducting materials, one or more semi-conducting material), and optionally remove the less desirable district of material.Typically, pattern step relates to radiation pattern photoresist being exposed to suitable wavelength, makes some districts of photoresist be against corrosion and other district of photoresist is not against corrosion.On photoresist or with mask, photoresist some district is covered by forming mask images, and by the not capped district of mask exposure photoresist, and form radiation pattern on the photoresist.

But, not use mask to cover the district of photoresist before being exposed to radiation, can use by gas atom described herein and gas field ion source (such as, He ion source) the ion beam that produces of interaction, to irradiate composition photoresist, thus produce the district against corrosion and district not against corrosion expected.This can be implemented, such as, by making the scanned photoresist of ion beam grid, the district of the expectation of material is made to be exposed to ion (such as, by expecting the district that photoresist is exposed to radiation opens ion beam and closing ion beam by being exposed in the district of radiation at undesirably photoresist).As a result, semiconductor article can with maskless process manufacture.

Use the ion beam produced by the interaction of gas atom and gas field ion source (such as, He ion source) disclosed herein can provide one or more following advantages.As described in, can carry out technique and not use mask, this can reduce the time relevant to the manufacture of semiconductor article, cost and/or complexity.The degree of depth of the relatively large focus of ion beam can allow the photo anti-corrosion agent material (such as, 2 μm or thicker, 5 μm or thicker, 10 μm or thicker and/or 20 μm or thinner) that composition is relatively thick.The relatively dark penetration depth of the ion that can realize with ion beam can aid in treatment is relatively thick further photo anti-corrosion agent material, and the auxiliary photo anti-corrosion agent material processing more standard thickness with good quality.In addition, ion beam has higher resolution relative to what usually adopt electron beam to realize, allows with the feature of higher accurate manufacturing technique smaller szie.In addition, the ion beam composition of photoresist can be faster than the Electron Beam patternable of photoresist.

(iii) combination of the ion beam of ion microscope and focusing

Focused ion beam (FIB) uses usually during the manufacture of semiconductor article, to obtain the sample for detecting.Gallium (Ga) ion is generally used for FIB.FIB can be used in order to a variety of causes, such as, by the cross section imaging of semiconductor article, circuit editor, the preparation of the accident analysis of semiconductor article, the semiconductor article sample of transmission electron microscope (TEM) and mask repair.Optionally, FIB can be used to deposit one or more materials (such as, as the ion source in chemical vapor deposition method) on sample.Typically, FIB is used to remove material from semiconductor article by sputtering.Such as, in certain embodiments, FIB is used to be cut into slices by semiconductor article so that the cross section of expose article, for using the follow-up imaging of ion microscope.In certain embodiments, FIB is used to sputter away material to form groove or path article from article.This technology can be used to, such as, and the part of subsurface article of expose article.Ion microscope can be used to deposit new material subsequently, or etches away the existing material exposed by FIB, uses gas assisted chemical techniques.In certain embodiments, FIB can also be used as optionally sputter tool, to remove the part of semiconductor article, and the part of such as, electric conducting material on article.In certain embodiments, FIB is used to the part of cutting away sample, makes described part can subsequently analyzed (such as, use TEM).

Usually be desirably on sample and accurately locate FIB.Gas field ion microscope described herein (such as, He ion microscope) can be used to this object.Such as, crossbeam (cross-beam) instrument with FIB instrument and gas field ion microscope can be used, and makes the position of FIB can use gas field ion microscope to determine and not mobile example.Adopt such instrument, gas field ion source can be used to Imaged samples and provide may be used for accurately by the information of expected location FIB.Relative to use SEM, such layout determines that the position of FIB can provide many advantages.For example, the use of SEM can cause the magnetic field adjacent to sample surfaces, and this can cause the isotope separation of Ga ion, causes the position of more than one FIB on sample.In many situations, this problem cause FIB and SEM contacted use instead of use simultaneously.But on the contrary, gas field ion microscope not having to work under such magnetic field, can thereby eliminate and being separated relevant complexity to Ga ion isotopes, also allow FIB and gas field ion microscope to use simultaneously simultaneously.This can be expect, such as, when the sample (such as, detecting for TEM) for the preparation of subsequent detection, wherein can expect that the thickness of sample meets relatively strict tolerance.Use the additional advantage of gas field ion microscope (such as He ion microscope) be adopt than typically SEM there is longer operating distance, and still keep extraordinary resolution, because ion beam has the virtual source size less than electron beam.This can alleviate some spatial limitation that can exist for the instrument in conjunction with FIB instrument and SEM.The another advantage of gas field ion microscope described herein is subsurface information that can obtain sample, and this can improve the ability of accurately location FIB, and SEM cannot provide such sub-surface information usually.

(iv) gas assistant chemical

Gas assistant chemical is generally used for removing material to given layer adding material and/or from given layer during semiconductor manufacturing.Such as, gas assistant chemical may be used for semiconductor circuit editor, damages or the circuit that manufactures improperly in semiconductor article to repair.Gas assistant chemical can also be used for mask and repair, and wherein material may be added to mask or is removed from mask, to repair by the defect used or incorrect manufacture causes.

Described technique is usually directed to electronics and active gases to interact, to form the reacting gas can participating in the chemistry on the surface at semiconductor article subsequently, thus adding material is to surface, from remove materials, or both.Typically, electronics is produced as the secondary electron caused by the interaction of Ga ion beam and sample, and/or electronics is produced as the secondary electron caused with the interaction of sample by electron beam (such as, being produced by SEM).Optionally, suitable pumping system may be used for the less desirable volatile products removing surface chemistry.

May be used for comprising Cl from the example of the active gases of remove materials ₂, O ₂, I ₂, XeF ₂, F ₂, CF ₄and H ₂o.For example, in certain embodiments, by electronics and Cl ₂and/or O ₂interaction, and allow the chemical species etched surfaces district of gained, the surface region formed by chromium, chromium oxide, chromium nitride and/or nitrogen chromium oxide can be removed at least partially.As another example, in certain embodiments, by electronics and XeF ₂, F ₂and/or CF ₄interaction, and allow the chemical species etched surfaces district of gained, the surface region formed by tantalum nitride can be removed at least partially.As another example, in certain embodiments, by electronics and H ₂o and/or O ₂interaction, and allow the chemical species etched surfaces district of gained and the surface region formed by carbonaceous material can be removed at least partially.

The example that may be used for the active gases of deposition materials is from the teeth outwards WF ₆(such as, in order to deposit W, W bolt).

The ion beam produced by the interaction of gas atom and gas field ion source (such as, He ion source) described herein can be used to carry out gas assistant chemical.In such technique, such as, the secondary electron leaving sample due to the interaction of ion beam and sample can be the electronics for assistant chemical.Use such ion beam can provide several advantage relative to use Ga ion beam.For example, use He ion beam can reduce (such as, eliminating) less desirable ion implantation, and the injection of less desirable Ga is the common problem when using Ga ion beam.As another example, gas field ion bundle (such as, He ion beam) relative to Ga ion beam and/or incident beam (such as, incident beam by SEM produces) resolution of improvement can be provided, this can allow the use of chemistry that is more accurate and/or that can control.This is passable, such as, reduce (such as, eliminate) interaction of some part of less desirable ion and sample is (such as, can occur restrainting the afterbody that distribution has the less desirable region extending to sample for Ga ion beam, the injection of Ga can have problems for the performance of semiconductor article there).

V () sputters

In the manufacturing process of semiconductor article, during some step can be desirably in, remove material.Ion beam may be used for this object, and wherein ion beam is from sample sputter material.Particularly, the ion beam produced by the interaction in gas atom and gas field ion source described herein may be used for sputtered samples.Although He gas ion can be used, typically preferably use heavier ion (such as, Ne gas ion, Ar gas ion, Kr gas ion, Xe gas ion) to remove material.During the removal of material, ion beam is focused in the district wanting the sample residing for removed material.

The advantage using ion beam to remove material can remove material in relatively controlled and/or accurate mode.Additional advantage can realize sputtering and not having the injection of less desirable ion (such as, often cause when using Ga ion sputtering, wherein Ga injects is the common less desirable side effect sputtered).

(vi) detection in space

During the manufacture of semiconductor article, the space in some feature or layer can be become by unfavorable pattern, and in certain embodiments, space can the characteristic (such as, electricity, machinery) of effect characteristics and/or whole device undesirably.In certain embodiments, follow-up processing step can open space, and space is passable, such as, fills with liquid and/or gas ingredients.This can cause the corrosion of structure below, the particle defects of wafer surface around and/or residue defect.

For example, from WF ₆during deposition W bolt, TiNx protective layer is generally used for the adjacent dielectric material (such as, the silex glass of doped with boron and phosphorus) of protection and avoids corroding (such as, coming from the HF discharged between W Formation period).TiN _xinterruption in layer can cause significant space to be formed.As another example, material (such as, the dielectric material) deposition in groove (groove of such as, relatively high aspect ratio) can cause the formation of bottleneck and space subsequently to be formed.As other example, during space forms the dielectric filling that can appear at fleet plough groove isolation structure.As another example, space can be formed between the Formation period of the conductor wire of material (such as, copper cash), and this can cause reducing conductivity undesirably.In some situations, such space can cause expecting that conduction part lacks conduction.

By the ability utilizing it to provide the sub-surface information of the sample of such as semiconductor article, gas field ion microscope as the described herein (such as, He ion microscope) can be used to research space and be formed.This characteristic can use, to determine existence and/or the position in space during semiconductor article manufactures.This is the advantage of uniqueness being better than using electron beam, because electron beam does not provide the information under this type of sample surfaces usually.

(vii) overlapping mobile aligning (overlay shift registration)

Overlapping mobile aligning typically refers to aiming at semiconductor article to the feature in the feature of given layer and the different layers of semiconductor article.As mentioned above, the formation of semiconductor article is usually directed to the correct formation of many layers.Typically, semiconductor article comprises far more than 20 layers.Often, each layer can comprise multiple different feature, and each feature, desirably with hi-Fix, makes semiconductor article correctly to work.For example, semiconductor article can comprise side direction feature, such as conductor wire, and conductor wire in the different layers and be interconnected by path.Usually, expect the feature in semiconductor article is aimed at mutually, with in 100nm (such as, 75nm, 50nm, 25nm, 15nm, 10nm, 9nm, 8nm, 7nm, 6nm, 5nm, 4nm, 3nm, 2nm, 1nm).The single misalignment of these many features can cause the invalid of whole semiconductor article.

Overlapping mobile usual use test structure use optical technology of aiming at is carried out, and this test structure can be the structure (being significantly greater than microcircuit features size) of μm size.Like this, due to the die space amount that it occupies, cannot be placed in the tube core on wafer optic test one exemplary.Test structure can be placed on, and such as, close to the edge of wafer, but they still occupy the space of the preciousness in wafer surface.Optic test structure is also expensive, because it is only manufactured for the object of aiming at.Finally, for it, the use for the optic test structure of aiming at can determine that the precision of the aligning of the feature in different layers has limitation.

Gas field ion microscope described herein (such as, He ion microscope) with relatively high precision provide about all kinds information of sample ability (such as, topographical information, the material constituent information on surface, the material constituent information of sub-surface region, crystalline information, the voltage contrast information on surface, the voltage contrast information of sub-surface region, magnetic information, and optical information) allow microscope advantageously to be used during the manufacture of semiconductor article, guarantee that the feature in device is correctly located with high accuracy and has correct size in device so that auxiliary.Particularly, He ion microscope can allow the circuit feature in multilayer to aim at than the higher resolution that optic test structure typically can be used to realize.In addition, the mobile aligning of overlap can be carried out, and the test structure not using special manufacture (such as, optic test structure), because, such as, gas field ion microscope described herein (such as, He ion microscope) can subsurface feature of sample of imaging such as semiconductor article.Thus, the space be wasted on the wafer occupied by the test structure of special manufacture (such as, optic test structure) can be avoided, and the cost relevant to comprising such test structure and/or complexity can be avoided.

(vii) critical size metering

Critical size metering refers to that the performance for device can have the measurement of the linear dimension of the feature in the semiconductor article of crucial effect.The example of such feature can comprise line (such as, electric conducting material line, electrical semiconductor line of material, electrically non-conductive material line).Semiconductor article can comprise the one or more features with the size of 20nm or less (such as, 10nm or less, 5nm or less, 4nm or less, 3nm or less, 2nm or less, 1nm or less).In certain embodiments, the size of feature is repeatedly measured, to provide the statistical information about characteristic size.Critical size is measured and is often related to, such as, and the determination of the length of such as, pattern features on wafer.Wafer (comprise multiple tube core, each tube core forms semiconductor article) can be selected at random for detecting from manufacture line, or all wafers on production line can be detected.Image-forming instrument can with relatively high through-rate for measuring by the critical size selected.If measured critical size does not drop within receivable restriction, then wafer can be abandoned.If the multiple samples deriving from specific manufacturing machine have the critical size outside receivable restriction, then this machine can be stopped use, or its running parameter can be changed.

He ion microscope system disclosed herein may be used for the measurement of critical size.Particularly, He ion beam can be scanned by grid in the district of wafer, and the gained image of wafer may be used for determining critical size.Measure for critical size, relative to SEM or other detection system, He ion microscope system can provide many advantages.The edge blurry phenomenon that He ion microscope image is usually less than the SEM image shows that can contrast (usually, too much signal, the saturation point of proximity detector, owing to having the productive rate of the raising caused close to the shape characteristic of the slope being parallel to bundle).The edge blurry phenomenon reduced is relative to the interactional volume of electronics with surface, the result of the less interaction volume between He ion and sample surfaces.

In addition, the incident beam that incident He ion ratio can contrast can be focused onto less spot size.Less bundle spot size, is combined with less interactional volume, causes the image of the sample with the resolution more superior than the image produced with SEM, and the determination of the critical size of more accurate sample.

The depth of focus of He ion beam is relatively large compared with SEM.As a result, when using ion beam, compared with electron beam, the resolution of the sample characteristic of varying depth is more consistent.Thus, ion beam is used can to provide the information of various sample depth with the better and more consistent lateral resolution that can provide than use electron beam.For example, the better critical size using ion beam can realize than using electron beam to realize distributes.

In addition, at least part of obtain according to secondary electron in the embodiment of information wherein, the relatively high secondary electron productive rate provided by ion beam compared with electron beam, can cause for the relatively high signal to noise ratio of constant current.This can allow again the enough information obtaining sample within the relatively short time cycle, adds to the throughput of constant current.

Use the He ion of scattering can carry out the imaging of the sample determining critical size.This provide high-resolution distance determine outside the advantage of extra material information.

Between the operating period of the ion microscope system of critical size measurement, flood gun may be used for excessive charged (discussion see above) of avoiding sample surfaces.Alternatively or additionally, low-down He ion current (such as, 100fA or less) can be used.Except reducing surface charge and keeping except eyefidelity, the use of low ion current reduces the damage that the ion beam for some photo anti-corrosion agent material is introduced.

In certain embodiments, first the sample wafer being selected for critical size measurement can need cut into slices (sectional dimension such as, measuring sample).In order to this object, heavier gas such as Ne and Ar can be used in ion microscope and may be used for cutting to be formed the ion beam wearing sample.As an alternative, Ga base FIB can be used to section sample.Then, microscopic system can remove these gases and He can be introduced into, and critical size measurement He ion beam is carried out, avoids the specimen breakdown during measuring.

(viii) line edge roughness and line width roughness

Line edge roughness typically refers to the roughness at the edge of the line of the material in semiconductor article, and line width roughness typically refers to the roughness of the width of the line of the material in semiconductor article.Expect to understand these values to determine whether there is actual or potential problem in given semiconductor article.Such as, if the adjacent line formed by the material conducted electricity has the edge mutually bulged, then line can contact with each other and cause short circuit.Expect to understand line edge roughness and/or line width roughness is 5nm or less (such as, 4nm or less, 3nm or less, 2nm or less, 1nm or less, 0.9nm or less, 0.8nm or less, 0.7nm or less, 0.6nm or less, 0.5nm or less).In certain embodiments, line edge roughness and/or line border width repeatedly measured, to provide the statistical information of the size about feature.In addition, it is interior (such as that manufacturing tolerance for the parameter of such as line edge roughness can be controlled in 5nm or less, in 4nm or less, in 3nm or less, in 2nm or less, in 1nm or less, in 0.5nm or less, in 0.1nm or less, in 0.05nm or less, in 0.01nm or less).

When determining line edge roughness and line width roughness, wafer can be selected at random for detecting from manufacture line, or all wafers on production line can be detected.Image-forming instrument can with relatively high through-rate slotted line edge roughness and line width roughness.If line edge roughness and line width roughness do not drop within the restriction that can receive, then wafer can be abandoned.If the multiple samples deriving from specific manufacturing machine have line edge roughness outside receivable restriction and line width roughness, then this machine can be stopped use, or its running parameter can be changed.

Gas field ion microscope disclosed herein (such as, He ion microscope) may be used for the metering of line edge roughness and line width roughness.Particularly, He ion beam can be scanned along the length of feature by grid, and the information of gained can be used to relatively high precision determination line edge roughness and line width roughness.

For the measurement of line edge roughness and line width roughness, relative to SEM and other detection system, He ion microscope system can provide many advantages.The SEM image that He ion microscope image ratio can contrast shows less edge blurry phenomenon (usually usually, too much signal, the saturation point of proximity detector, owing to having the productive rate of the raising caused close to the shape characteristic of the slope being parallel to bundle).The edge blurry phenomenon reduced is the result relative to the less interaction volume between the interactional He ion on electronics and surface and sample surfaces.

In addition, the incident beam that incident He ion ratio can contrast can be focused in less spot size.Less bundle spot size, is combined with less interaction volume, causes the image of the sample with the resolution more more superior than the image produced with SEM, and the determining more accurately of the line edge roughness of sample and the roughness of live width.

The depth of focus of He ion beam is relatively larger than SEM.As a result, when using ion beam, compared with electron beam, the resolution of the sample characteristic of different depth is more consistent.Thus, ion beam is used can to provide the information of various sample depth with the better and more consistent lateral resolution that can provide than use electron beam.For example, the better live width using ion beam can realize than using electron beam to realize distributes.

In addition, at least part of obtain in the embodiment of information according to secondary electron wherein, compared with electron beam, the relatively high secondary electron productive rate provided by ion beam, can cause for the relatively high signal to noise ratio of constant current.This is passable, allows again the enough information obtaining sample within the relatively short time, adds to the throughput of constant current.

The He ion of scattering can be used to carry out the imaging of the sample of the determination of critical size.This additionally provides the additional advantage of material information except high-resolution distance is determined.

During using ion microscope system to be used for line edge roughness and line width roughness measurement, flood gun may be used for excessive charged (discussion see above-mentioned) of avoiding sample surfaces.Alternatively or additionally, low-down He ion beam current (such as 100fA or less) can be used.Except reducing surface charge and keep except eyefidelity, the use of low ion current reduces the damage that the ion beam for some anticorrosive additive material causes.

In certain embodiments, first the sample wafer being selected for line edge roughness and line width roughness measurement can need cut into slices (sectional dimension such as, measuring sample).In order to this object, heavier gas such as Ne and Ar can interact to produce the ion beam that may be used for cutting and wear sample with gas field ion source.Then, microscopic system can remove these gases and He can be introduced into, and critical size measurement He ion beam is carried out, avoids the specimen breakdown during measuring.

(ix) circuit editor

As discussed previously, the layer of the many different materials of mode lamination that the technique forming semiconductor article typically relates to expecting, and suitable technique is carried out on each layer.Usually, this to relate on given layer deposition materials and/or removes material from given from layer.Final semiconductor article is included in the many different feature (such as, in order to form the circuit of expectation) in different layers.Usually, expect resulting device feature is properly aligned beneath so that by desirably working.Alignment mark is generally used for correctly aiming to the feature in given layer with the feature in different layers to assist in semiconductor article.But, use alignment mark can add extra step for whole manufacturing process, and/or other complexity or expense can be introduced for manufacturing process.In addition, only the existence of alignment mark just means the area and/or volume (such as, for the manufacture of useful device) that there is the semiconductor article that cannot use.

As mentioned above, ion beam can be used to subsurface district of research material.This characteristic can be used to the position of some feature determined in the layer below superficial layer, allows the feature in the different layers of semiconductor article not use alignment mark by desired being aligned.

Gas field ion microscope described herein (such as, He ion microscope) may be used for removing and/or deposition materials (such as, from circuit), such as, uses above-mentioned gas assistant chemical and/or sputtering technology.The advantage using ion microscope to carry out these techniques is that ion beam can also for assessment of the product of gained to determine, such as, the material whether expected correctly is deposited or removes.This can reduce the cost relevant to device manufacture and/or complexity, and/or increases the output of device manufacture.The removal of material and/or the ability of interpolation can be combined to carry out circuitry repair under surface.In order to repair subsurface defect, come from the material of device first by the degree of depth removed to exposing defect downwards.Subsequent defect passes through or is repaired to device adding material or from device removal material.Finally, the layer of the overlap of device is successively repaired by adding the new material of suitable thickness.

Gas field ion microscope described herein (such as, He ion microscope) can provide the concrete advantage of circuit editing application, comprises little spot size and low ion current, for editor that the is controlled and device of high-precision manufacture.

X () mask is repaired

Semiconductor article typically uses photoetching process to prepare, photoetching process relates to the layer of placement photoresist (such as, polymer photoresist, such as polymethyl methacrylate (PMMA) or epoxy radicals photoresist, allyl diglycol carbonate, or photosensitive glass) on the surface, patterned material, some district of photoresist is made to be (and some districts are not against corrosion for etchant) against corrosion for etchant, the district non-against corrosion of etching material, deposit suitable material (such as, one or more electric conducting materials, one or more electrically non-conductive materials, one or more semi-conducting material), and optionally remove the less desirable district of material.Typically, pattern step relates to radiation pattern photoresist being exposed to suitable wavelength, makes some districts of photoresist be against corrosion and other district's right and wrong of photoresist are against corrosion.By forming the image of mask on photoresist or cover some district of photoresist with mask, and by the not capped district of mask exposure photoresist, and radiation pattern can be formed on the photoresist.

Mask in the semiconductor industry for the manufacture of integrated circuit and other microelectronic devices can be frangible and/or costliness.In addition, mask-making technology can be consuming time and/or exquisite.In some environments, although typically use during manufacturing such mask careful, foozle produces defects on mask.Under other environment, defects on mask can come from process and common use.If circuit or other device use defective mask to produce, then circuit or device can work improperly.Time required for the new mask of given manufacture and expense, edit defective mask than manufacturing whole new mask more cost efficient.

Defects on mask is usually included in the surplus of the mask material in the district of the mask that should not have material, and/or should there is the disappearance of place's mask material at material.In arbitrary situation, gas field ion microscope described herein (such as, He ion microscope) may be used to detect and/or repair mask.

In certain embodiments, gas field ion microscope disclosed herein (such as, He ion microscope) may be used for detecting mask to determine whether that defect exists, and if defect exists, defect there.Many in the various favourable feature that gas field ion microscope disclosed herein (such as, He ion microscope) provides be supposed to for imaging masks.

In certain embodiments, except imaging masks during repairing at mask, during repairing technology, gas field ion microscope (such as, He ion microscope) can be used.For example, gas field ion microscope can be used to relative to FIB location mask, makes FIB can be used to use gas meter surface chemistry technique and/or etch process add mask and/or remove material from mask, such as described above.As another example, gas field ion microscope, except initial imaging masks so that except the existence determining defect and/or position, may be used for using gas meter surface chemistry technique and/or etch process add mask and/or remove material from mask, such as described above.Optionally, gas field ion microscope can be used to carry out some troubleshooting procedure (adding material, remove material) and Other Instruments (such as, FIB) is used to carry out other troubleshooting procedure (adding material, removal material).

(xi) defects detection

Usually, during the technique manufacturing semiconductor article, the test item in order to latent defect.Typically, detect and usually use instrument on line to carry out, on this line, instrument always runs and is supplied to wafer and is full automatic.Instrument is through being usually used in the district whether existing defects will occur of little district checking wafer.This detection was carried out before defect reexamines (discussion see below).With determine that the character accurately of given defect compares, the target of defects detection determines whether that defect can exist typically.During defects detection, the district of wafer is analyzed, so that the characteristic (such as, voltage contrast properties, topographical property, material behavior) understood relative to district's whether some abnormality of other district of same wafer and/or other wafer is by sample display.Typically, for potential defect, the coordinate (such as, X, Y-coordinate) on wafer is marked, and the described position of wafer is more carefully detected during defect reexamines.

The information of sample during gas field ion microscope as described herein (such as, He ion beam) may be used for collecting defects detection.Such microscope may be used for relatively high throughput and high-quality defects detection.The different contrast mechanism provided by gas field ion microscope (such as, He ion microscope) can allow the visualization of dissimilar defect, and with than use optical image technology viewed higher resolution usually.

(xii) defect reexamines

Usually, if sample is noted as and has potential defect during defects detection, then sample is submitted to defect subsequently and reexamines, and the given zone wherein with the sample of latent defect is studied to determine the character of defect.According to this information, the improvement for technique can be implemented to reduce the risk of the defect in final products.Typically, defects detection reexamines than defect carries out than with the enlargement ratio of lower speed and Geng Gao, and can automatically carry out or manually carry out, to obtain the specifying information about one or more defect.Described information reexamines period in defect obtain abnormal result why for attempting to understand, and produces the character of defect and the reason of abnormal results.

Gas field ion microscope described herein (such as, He ion microscope) may be used for the semiconductor article studying different step (such as, each step) in manufacturing process.Particularly, by the particle (discussion see above) of the particle or number of different types that detect and analyze a type, gas field ion microscope (such as, He ion microscope) may be used for the topographical information on the surface determining semiconductor article, the material constituent information on semiconductor article surface, the material constituent information of the sub-surface region of semiconductor article, the crystalline information of semiconductor article, the voltage contrast information on semiconductor article surface, the voltage contrast information of the sub-surface region of semiconductor article, the magnetic information of semiconductor article, and/or the optical information of semiconductor article.The different contrast mechanism provided by He ion microscope can allow otherwise use the visualization of the absent variable defect of SEM base technology.

Use ion microscope described herein or ion beam can provide various different advantage, this can reduce the time relevant to the manufacture of semiconductor article, cost and/or complexity usually.The typical advantage relevant to use ion microscope described herein or ion beam comprises relatively high resolution, relatively little spot size, relatively few less desirable specimen breakdown, relatively few less desirable deposition of material and/or injection, relatively high image quality within the relatively short time, relatively high throughput.

(xiii) circuit testing

During the manufacture of semiconductor article, the conductivity of the one or more feature of article and functional can be tested.This technique is usually directed to feature to be exposed to charged particle and the speed of monitoring charge buildup subsequently.Open circuit is charged with different speed relative to closed circuit, allows open circuit be identified and consider detection specifically.Gas field ion microscope described herein (such as, He ion microscope) can be used to use ion beam to apply electric charge to feature, and/or may be used for monitoring whether electric charge is leaked away (such as, by monitoring voltage comparative information).Optionally, flood gun may be used for applying electric charge (discussion see above), and gas field ion microscope can be used to monitor whether electric charge is leaked away (such as, by monitoring voltage contrastive feature).

B. metal and alloy corrosion

He ion microscope may be used for identifying and check the corrosion of metals in various device and material.Such as, the metal fixture used in nuclear power plant, Military Application and biomedical applications and device can experience corrosion owing to wherein using their harsh environment.He ion microscope may be used for the relative abundance according to hydrogen in device (H) and builds the image of these and other device, and described abundance is as corroding instruction reliably.

Typically, in order to build image according to the H ion be scattered or atom, relative to the He ion beam of incidence, the detector of these ions or atom is located on the dorsal part of sample.Sample is exposed to He ion in sample, produces the H atom and ion that are scattered, and these H atom be scattered and ion can be detected and image for building sample.H abundance image can be used to the degree of the corrosion assessed in sample subsequently.The little spot size of He ion beam and interaction volume can cause the H image of high-resolution sample obtained and not damage sample.

C. the read/write structure of data storage

The read/write head used in the magnetic memory apparatus of such as hard disk is fabricated into high tolerance and must detects manufacturing defect before the mounting.These devices often have very high aspect ratio; The minor face of such device can be as small as 1nm.When between detection period for these devices of imaging time, He ion microscope provides many advantages.Have among these advantages and these small devices can be caused with the little spot size of high-resolution imaging and interaction volume, whole high aspect ratio device can be allowed along the large depth of focus of the imaging of the focusing of its long size, with the material information provided by the He ion of scattering and/or the measurement of neutral atom, they may be used for confirming that small circuit element is properly connected.

D. biotechnology

The element of nondestructive technique determination biological sample and/or chemical analysis information is used to be often expect.The example of biological sample comprises tissue, nucleic acid, protein, carbohydrate, lipid and cell membrane.

Gas field ion microscope described herein (such as, He ion microscope) may be used for determining, such as, the topographical information of biological sample, the material constituent information of biological sample, the material constituent information of the sub-surface region of biological sample and/or the crystalline information of biological sample.Such as, gas field ion microscope can be used to the cell of imaging immune marking and inner eucaryotic cell structure.Microscope can be used some advantage be simultaneously provided in disclosed in this in like fashion.

E. pharmacy

Often, therapeutic agent (such as, Small molecular medicine) forms crystal (such as, when it is produced by solution).Determine that the micromolecular crystal structure of crystallization can be expect, because this is passable, such as, information about micromolecular hydration is provided, this can provide again the information about micromolecular bioavilability, in some instances, crystalline information can be originally proves that in fact Small molecular is in amorphous (contrasting with crystalline phase) form, and this also can affect micromolecular bioavilability.

Additionally or alternatively, the element and/or the chemical analysis information that use nondestructive technique determination biological sample is often expected.

Gas field ion microscope described herein (such as, He ion microscope) can be used to determine, such as, the topographical information of biological sample, the material constituent information on the surface of biological sample, the material constituent information of the sub-surface region of biological sample and/or the crystalline information of biological sample.Microscope can be used some advantage be simultaneously provided in disclosed in this in like fashion.

Computer hardware and software

Usually, above-mentioned any analytical method can with computer hardware or software, or both combinations and being implemented.Described method can use standard program technology and implement, according to method described herein and figure in computer program.Program coding is applied in input data to carry out function described herein and to produce output information.Output information is applied in one or more output devices, such as display monitor.Each program can be implemented, to link up with computer system with high level process or object-oriented programming language.But if expected, program also can be implemented with compilation or machine language.In arbitrary situation, described language can be to be compiled or by the language explained.In addition, program can be run on the application-specific integrated circuit (ASIC) for this object pre-programmed.

Each such computer program is preferably stored in the storage medium that can be can read by universal or special programmable calculator or device (such as, ROM or disk) on, configure and moving calculation machine, to carry out process described herein when being calculated machine-readable storage medium or device with box lunch.Program the term of execution, computer program also can reside in cache memory or main memory.Analytical method also can be implemented as computer read/write memory medium, and with computer program configuration, the storage medium of wherein configuration like this causes computer run in concrete and predetermined mode thus carry out function described herein.

Other embodiment

Although described some embodiment, other embodiment has also been possible.

For example, SEM can be used to be combined with gas field ion microscope in one or more aforesaid embodiments.Such as, SEM may be used for producing secondary electron, auger electrons, x-ray photon, IR photon, optical photon and/or UV photon.Optionally, SEM may be used for improving gas assistant chemical.Gas field ion microscope can, with any operational mode configuration disclosed herein, make SEM and gas field ion microscope system carry out supplementary functions.

As another example, although it is most advanced and sophisticated to disclose W (111), in tip, the crystalline orientation of different W also can be used.Such as, W (112), W (110) or W (100) can be used most advanced and sophisticated.

As another example, in certain embodiments, ion microscope (such as, gas field ion microscope) suitable device can be comprised to allow the microscope used on line, for the analysis of sample, such as relevant to semi-conductor industry sample (such as, sample wafer).In certain embodiments, such as, ion microscope can be automated for standard-sized semiconductor wafer with high speed loadlock (high-speed loadlock).In certain embodiments, this system can also comprise wafer station, when the sample wafer of a part can be placed under ion microscope with high speed by this wafer station.Ion microscope can also comprise scanning system, and this scanning system can high speed grid scanning metering pattern.Optionally, ion microscope can also comprise charge neutralization design to reduce the charged of sample.Ion microscope can also comprise wafer height control module to adjust operating distance.In certain embodiments, system can be configured, and independent tube core (such as, having the length of 50mm magnitude) can be imaged.

Example

Following Examples is schematic, does not attempt as restriction.

1.

The transmitter line (diameter 250 μm) of the 25mm length formed by monocrystalline W (111) obtains from FEI Co. (Hillsboro, OR).Transmitter line is cut into 3mm and is placed on one side.V-arrangement heater line is prepared as follows.The polycrystalline tungsten line (diameter 180 μm) of 13mm length obtains from Goodfellow (Devon, PA) and cleaned 15 minutes to remove carbon residue and other impurity by sonication in distilled water.Line is put wherein and is bent to form the angle of 115 degree.Be electrochemically etched to prepare it for using the time welding of the AC current potential of 1V and the frequency of 60Hz and about 15 seconds applied in the 1N aqueous solution of NaOH near the district B on the summit of " V ".Heater line is removed from etching solution subsequently, with distilled water flushing, and dried.

V-arrangement heater line is installed in fixture to guarantee that the end of line keeps coplanar.Transmitter line by means of spot welds to the V-arrangement summit of heater line.Subsequently, the two ends of heater line are spot-welded to 2 pillars of a support group of the type shown in Figure 11 A and 11B.Prop up support group to obtain from AEI company (Irvine, CA).The assembly of gained is dried by ultrasonic clean in distilled water subsequently.

Support group is installed transmitter line and a support group clean after, the end of reflector is etched by following electrochemical process.First, anticorrosive additive material (such as, from Revlon company, the nail polish that New York, NY obtain) is applied to the length of the 0.5mm of transmitter line, from the free end of line.The droplet of resist is placed on the surface of clean glass microscope-slide, and line immerses Resist Solution 10 times, allows resist dry a little between each immersion.The coboundary of careful guarantee resist is circular, and the plane of circle is kept the axle perpendicular to line.After anticorrosive additive material is immersed for the last time in the end of transmitter line, line is allowed to dry 1 hour in atmosphere.

The support group being pasted with the transmitter line of resist coating is subsequently pasted to Etaching device, and Etaching device comprises: (a) vertical translation props up the translation device of support group; B () coils; (c) extend into dish, by stainless steel formed to electrode, to minimize less desirable chemical reaction.Dish be filled with etching solution to level make solution with to electrode contact.The solution of about 150mL is there is in Etaching device dish.The orientation of propping up support group is adjusted to guarantee that the longitudinal axis of transmitter line is basically parallel to vertical direction (such as, being provided for the direction of the translation of a support group along translation device).Subsequently, a support group uses translation device to reduce, until the transmitter line be exposed just in time contact etch solution to dish.The camera permission resist layer and the etching solution surface that are installed on the high magnification of Etaching device are easily observed, and allow transmitter line relative to the accurate location of solution surface.

Subsequently, line is reduced 0.2mm in addition and is entered etching solution.In this position, the part of the resist coating of transmitter line is completely immersed into etching solution.

Etching solution is made up of the 2.5M aqueous solution NaOH of 150mL.For the ease of wetting, 1 surfactant (PhotoFlo200, from Eastman Kodak, Rochester, NY obtain) is added into etching solution.Additionally use during etch process and use magnetic stirrer gently to stir etching solution.

External power source is connected to a support group pillar and to electrode.The waveform of maximum voltage swing, pulse duration and external power source can be controlled, to provide the specific etching condition in Etaching device.

The sequence of AC pulse is applied to transmitter line with the frequency of 60Hz, to promote electrochemical etching process.First, the pulse of 100 duration 580ms and size 10V is applied on the time window of 5 minutes altogether.The effect of the pulse be applied in is the speed increasing etch process.To immerse in solution but the part of the transmitter line do not covered by photo anti-corrosion agent material starts to etch away.Because transmitter line is located, the little uncoated district of the line only above the edge of photo anti-corrosion agent material is immersed in the solution, so observe the etching of the localization of the transmitter line in this district.Along with the progress of electrochemical reaction, because the diameter of the line in this district of etch process starts to narrow.

Then, the pulse duration of external power source is adjusted to 325ms, and on the time window of 5 minutes altogether, the pulse of 6 these duration is applied to transmitter line.These pulses further increase electrochemical etching process, cause the etched district of transmitter line to have very little diameter.

Finally, the pulse duration of external power source is adjusted to 35ms, and individual pulse is applied to transmitter line, until to have etched and the part of the resist of transmitter line coating drops and enters in etching solution.Prop up support group to remove from Etaching device subsequently, use distilled water rinsing, and dry in a stream of nitrogen.

Transmitter line-be still attached at a support group-use SEM inspection subsequently to verify that etched tip has suitable geometric characteristic.In 5keV work and the AMRAY Model 1860SEM with the probe size of 3nm to be used to imaging transmitter line most advanced and sophisticated.Propping up support group is installed in the sample area of SEM, on the sample manipulator being equipped with inclination and rotating operation table.Obtain the image in source from several different viewing angle and enlargement ratio, be shaped with being in the main true so that checking is most advanced and sophisticated.

SEM image is used to characterization average cone direction subsequently, average tip radius, and on average bores direction, as the discussion on the summit at the previous tip for line.The image measured for these gets multiplication factor 65,000X, and along the optical axis for the axle orientation at a right angle of transmitter line.Use the inclination of SEM sample manipulator adjustment transmitter line, to guarantee that transmitter line is for optical axis orientation orthogonally.In order to carry out most advanced and sophisticated cone angle, bore the average measurement of direction and radius, SEM sample manipulator is used to rotating tip 45 ° (axle around transmitter line) between continuous print image.This produces most advanced and sophisticated a set of 8 images-each from different visual angles-it is subsequently for determining most advanced and sophisticated cone angle, radius of curvature and cone direction.

4 of the image at 8 visual angles have been illustrated in Figure 37 A-37D.Each SEM image is digitized as bitmap format and adopts the custom algorithm analysis using MathCAD software kit (PTC Inc., Needham, MA) to develop subsequently.First, each image by applying Gaussian convolution algorithm by smoothly, to reduce picture noise, especially owing to the noise of the vibration of the SEM occurred during imaging.Each image is applied in subsequently to emphasize the border between tungsten tip and black background according to the filtration step of threshold strength value.Most advanced and sophisticated border in each image is confirmed as the group that non-zero intensities (X, Y) is put subsequently, and it forms the boundary line corresponded between most advanced and sophisticated image pixel and the image pixel corresponding to black background (such as, zero intensity).(X, the Y) of one of one group of such view for tip puts shown in Figure 38.For view each at 8 visual angles at tip, determine the group of similar boundary point.

Before the slope calculating given boundary curve, smoothing algorithm is applied in curve to guarantee that the slope local of curve is for noise and other little signal intensity relative insensitivity.Smoothing algorithm is formed by original (X, Y) data point being fitted to 4 rank multinomials, and this has been found to describe most advanced and sophisticated shape well.The effect of smoothing algorithm guarantees the either side at vertex position, and the first derivative of this curve is not affected excessively by the little change of shape.

After smoothing step, finite-difference algorithm is used along boundary curve at each X point slope calculations dY/dX for each view.Figure 39 shows the figure of the slope of the calculating of the point along boundary curve of the function as X for the boundary curve shown in Figure 38.

For the particular figure at tip, the position corresponding to the boundary curve of the slope of the acquisition null value of this view is identified as most advanced and sophisticated summit and provides mark X _apex.It is the position of 1 that boundary curve corresponds to the value obtained closest to (X, the Y) point on summit, the slope of boundary curve, is given mark X _{+ 1}it is the position of-1 that boundary curve corresponds to the value obtained closest to (X, the Y) point on summit, the slope of boundary curve, is presented mark X _-1.

These measured points are used to determine most advanced and sophisticated geometric parameter subsequently.Left radius most advanced and sophisticated in specific view is calculated as X _{+ 1}and X _apexthe absolute value of difference be multiplied by 1.414.Right radius most advanced and sophisticated in specific view is calculated as X _-1and X _apexthe absolute value of difference be multiplied by 1.414.Subsequently, according to the value of left and right radius, radius of curvature most advanced and sophisticated in specific view is calculated as the average of left radius and right radius value.

View each for 8 visual angles at tip repeats the calculating of radius of curvature at right radius, left radius and tip.Average tip radius is calculated as the average of the measurement of tip curvature radius in the view at all tips subsequently.For the tip shown in Figure 37 A-37D, average tip radius is confirmed as 62nm.

The standard deviation of the left and right radius at all tips is also calculated, and is represented as the percentage of average tip radius.For the tip shown in Figure 37 A-37D, eccentricity is confirmed as 11.9%.

The cone angle at each middle tip of the view at 8 visual angles is also determined.In the boundary curve corresponding to each view, the point of contact, left and right on boundary curve lays respectively on side, tip left and right, in the position of distance tip 1 μm, measures, as discussed previously along Y-direction.Left cone angle most advanced and sophisticated in specific view is then determined to be in the tangent line of the boundary curve of left cut point and is parallel to Y-axis and angle between the line extending through this left cut point.Right cone angle most advanced and sophisticated in specific view is then confirmed as the tangent line of the boundary curve of right cut point and is parallel to Y-axis and angle between the line extending through right cut point.Finally, full cone angle be confirmed as the size of left and right cone angle and.

Most advanced and sophisticated average cone direction is then by calculating on average determining of 8 measurements of the full cone angle from the tip of the view at 8 visual angles at tip.For the tip shown in Figure 37 A-37D, such as, average cone direction is confirmed as 34.5 °.

For the specific view at tip, cone direction is calculated as the half of the absolute value of the difference between the size of left and right cone angle.8 measurements that this determines to produce most advanced and sophisticated cone direction are repeated for each of 8 views at tip.Most advanced and sophisticated average cone direction is then calculated as the average of the measurement in these 8 cone directions.For the tip shown in Figure 37 A-37B, average cone direction is confirmed as 2.1 °.

One group is used to determine whether that given tip is accepted for He ion microscope according to the standard of average tip radius, radius eccentricity, average cone angle and average cone orientation measurement.Usually, these standards are as follows.If the average cone angle measured is between 15 ° and 45 °, tip is accepted use, and average tip radius is between 35nm and 110nm, and the standard deviation of tip curvature radius measurement is less than 30%, and average cone direction is less than 7 °.Finally, meet each in these standards at the tip shown in Figure 37 A-37D, and this tip is accepted for He ion microscope like this.

After the checking of the geometrical performance at tip, most advanced and sophisticated detected in the FIM of customization.FIM comprises the installing zone supporting most advanced and sophisticated supporting component, and for the high voltage source at biased tip, adjacent to the extractor at tip, and record is from the detector of the emission of ions pattern at tip.

The distance of extractor and most advanced and sophisticated interval 5mm and there is the opening of 10mm.Extractor is grounded to external ground.Detector, namely the combination (from BurleElectro-Optics Inc., Sturbridge, MA obtain) of microchannel plate (MCP) and image intensifier is located in the distance of distance extractor 75mm.

Comprise most advanced and sophisticated supporting component to be installed in FIM and FIM room is evacuated to 1 × 10 ^-8the background pressure of Torr.The most advanced and sophisticated liquid nitrogen that uses is cooled to 77K as cooling agent.After equalized temperature, source is heated to 900K and continues 5 minutes so that the condensate be formed at during being released in technique on tip or other impurity.The most advanced and sophisticated applying electric current that is heated by is done to heater line, and tip is soldered to this heater line.Electric current use has the power supply (Bertan Model IB-30A, can from Spellman High Voltage Inc., and Hauppauge, NY obtain) of firm power ability and is applied in.Temperature survey uses leucoscope (from Pyro Corporation, Windsor, NJ obtain) to carry out.

Then, tip is cooled to 77K subsequently again, and FIM extractor is grounded and tip is biased to+5kV relative to extractor.High-purity He gas (99.9999% purity) is 1 × 10 ^-5fIM room is introduced under the pressure of Torr.Most advanced and sophisticated being biased is increased to+29kV with increment gradually until observe the image corresponding to the He ion leaving most advanced and sophisticated He ion on the detector.FIM launches pattern and corresponds to about 300 atoms in tip end surface.According to FIM pattern, most advanced and sophisticated monocrystalline composition and W (111) orientation are verified.

Then, tip is held atom trimer by sharpening to obtain in tip.Helium is pumped out from FIM room until the background pressure in room is less than 1.2 × 10 ^-8torr.Tip is heated subsequently, by the applying of the electric current for heater line described above, to the constant temperature 2 minutes of 1500K.Oxygen is with 1 × 10 ^-5the pressure of Torr is introduced in the FIM room near tip.After 2 minutes, tip temperature is reduced to 1100K.After 2 minutes of 1100K, oxygen supply is closed and tip allows to be cooled to about 77K.During cooling, and after oxygen supply is closed about 15 minutes, residual oxygen is pumped out FIM room until the background pressure in room is less than 1.2 × 10 ^-8torr.

Once be cooled to liquid nitrogen temperature, then extractor is as above biased, and tip is biased with+5kV relative to extractor again.He gas is with 1 × 10 ^-5torr is introduced into FIM room, and FIM is operated again as mentioned above to obtain most advanced and sophisticated He launching image.Most advanced and sophisticated voltage is gradually increased, until the FIM image at tip by with the biased detector of the current potential of the about+18kV on tip capture.

The FIM pattern be observed comprises the unnecessary atom outside three atom trimer structure of the expectation of adatom-tip.Adatom is by being removed lentamente with the field evaporation of the most advanced and sophisticated bias potential of+18kV.During field evaporation, most advanced and sophisticated image is absorbed termly and is monitored to determine when to stop field evaporation technique.Adatom is removed one by one until the atom trimeric FIM clearly image of observing tip.Except atom trimer, the crest line of 3 corner cones is also clearly observed.

Atom trimer is removed lentamente by most advanced and sophisticated further field evaporation.Exceed+18kV by increasing most advanced and sophisticated being biased lentamente, trimer atom is removed one by one, causes the tip of the sphering observed in the FIM image by detector record.

Most advanced and sophisticated bias potential is increased to+28kV further.During this technique, the field evaporation of sophisticated atomic continues.At the bias potential of+28kV, obtain another atom trimer on the summit at tip.Second trimeric FIM image is shown in Figure 40.After acquisition second trimer, most advanced and sophisticated bias potential is reduced to obtain FIM launching angle intensity the highest in pattern.This tip appearing at+23kV is biased.The highest angle intensity is most advanced and sophisticated biased by adjustment launches in pattern determined to obtain FIM by the maximum observation brightness of atom selected.Adjusted by the current potential along with tip, measured from trimeric

He ion current, and it is biased to verify that most angle of elevation emissive porwer occurs.He ion current uses the Faraday cup that is positioned in He ion beam path and measured.

By increasing most advanced and sophisticated current potential lentamente and be greater than+28kV and from tip field evaporation atom, to be most advanced and sophisticatedly passivated subsequently as the end shape close to sphere.Field evaporation continues until obtain another atom trimer at the bias potential of+34kV on the surface at tip.In order to verify most advanced and sophisticated repeatability of building process again, sharpening technique again by repetition twice to obtain new atom trimer in tip.After twice continuous print trimer is built again, helium supply is closed, and the tip be applied in is biased to be removed, and tip is allowed to heat to room temperature, and FIM chamber pressure is balanced with atmospheric pressure lentamente.Still the tip be arranged in supporting component be stored on the top of the shelf 2 weeks until it is used to helium ion microscope.

Comprise most advanced and sophisticated supporting component to be installed in similar in appearance in the helium ion microscope system of the system shown in Fig. 1 and 5.The element of system configures as follows.Extractor is located in apart from most advanced and sophisticated 1mm, and has the opening of diameter 3mm.First lens of ion optics are located in the distance apart from extractor 30mm.After the first lens, ion, through aiming at deflector, is aimed at deflector and is configured to four pole electrodes.The aperture with the opening of diameter 20 μm is located optionally to shield a part for ion beam along the path of ion further.The crosspoint of ion trajectory is located in the distance of 50mm before aperture.After the astigmatism corrector being configured to ends of the earth electrode is located in aperture, to adjust the astigmatism of ion beam.After the scan deflection device being configured to ends of the earth electrode is located in astigmatism corrector, to allow the surface of the scanned sample of ion beam grid.Second lens are located in the distance of range aperture 150mm, and are used to ion beam focusing on the surface of sample.Second forming lens is the right corner cone of tack, has the full cone angle of 90 °.

At first, ion microscope system is evacuated, and makes the base pressure of cusp field be about 2 × 10 ^-9torr.The most advanced and sophisticated liquid nitrogen that uses is cooled to about 80K.Extractor is grounded, and is applied in tip relative to the biased of extractor+5kV.

The most advanced and sophisticated power supply by applying 8W is heated to heater line, until its vision luminescence (tip temperature corresponding to about 1100K).The photon sent from the tip of luminescence is observed from the sidepiece of ion optics, uses the mirror that the plane for the longitudinal axis perpendicular to ion optics tilts with 45 °.Mirror is introduced into ion optics for this object, just in time aiming at the position below deflector, via the side mouth in ion column.Tip is tilted and is repeatedly moved, until the tip of luminescence is roughly along the axis alignment of ion optics.When the tip of luminescence appears as annulus point source, achieve suitable aiming at that the be most advanced and sophisticated and longitudinal axis.

Tip is allowed to cool and keeps the most advanced and sophisticated current potential relative to extractor+5kV to be biased simultaneously.Once tip has been cooled to liquid nitrogen temperature, then He gas is with 1 × 10 ^-5the pressure of Torr is introduced into cusp field.Ion microscope system is run in SFIM pattern, as mentioned above, to produce the image that most advanced and sophisticated He emission of ions pattern is shown.Image indicates the shape at the tip to atomic accuracy.Aligning electrodes is used to the surface in the scanned aperture of ion beam grid produced from tip.Sawtooth voltage function is applied in each aligning deflector to realize with the scanning of the grid of 10Hz frame rate, and sawtooth function is 150V relative to the maximum voltage of the public external ground of microscopic system.Grid scan pattern is scanned across 256 points on each direction of two orthogonal directions of the axle of ion optics.Astigmatism corrector and scan deflection device are not used in this imaging pattern.

In order to detect the ion through this aperture, copper sample is placed down below the second lens, and MCP detector is positively biased (relative to public external ground+300V) to measure because the secondary electron of copper sample is left in the interaction between sample and the He ion being incident on sample.Detector is located in the distance apart from sample 10mm and is parallel to the planar orientation of sample.

Detection system is at each grid scanning element sampling detector signal and produce most advanced and sophisticated SFIM image, and described image is shown on a monitor.In order to be conducive to imaging, the current potential of the first lens in ion column is set to most advanced and sophisticated biased 77%.Subsequently, increase along with tip is biased, SFIM image keeps enlargement ratio consistent roughly and intensity.When observing SFIM image, most advanced and sophisticated biased being increased lentamente has the trimeric tip of atom to eliminate less desirable adatom and to produce on its summit.This trimer is by increasing most advanced and sophisticated bias potential further and being removed to cause the field evaporation of sophisticated atomic.Field evaporation continues, until at the most advanced and sophisticated current potential of+23kV be applied in, new atom trimer is formed on most advanced and sophisticated summit.The SFIM image of the gained at this tip is shown in Figure 41.

Close (such as at aligning deflector, lens error correction device, scan deflection device and the second lens, zero potential relative to the public external ground of microscopic system) situation, a trimeric atom is selected and tip is tilted and the intensity of translation simultaneously the first lens is modulated by 100V.Microscopic system runs in FIM and most advanced and sophisticated FIM transmitting image collected by detector.Tip is repeatedly tilted and translation, until when the intensity of the first lens is modulated, the center at the tip on FIM image is not changed from an image to another image.

Then, aperture is placed into position and puts on the current potential aiming at deflector and adjusted to control the position of ion beam in aperture.Through the ion beam portion in aperture by detector image-forming, and detector image is used to repeatedly adjust aligning deflector.

Scan deflection device is used to the scanned sample surfaces of ion beam grid through aperture.Feature (copper grid) (the part number 02299C-AB of can identify on sample surfaces, high contrast, from Structure ProbeInternational, West Chester, PA obtains) be placed in the path of the ion beam below the second lens, and the secondary electron image of this feature uses the detector measurement of configuration discussed above.

The intensity of the second lens adjusted in case roughly by ion beam focusing on sample surfaces; It is about 15kV relative to public external ground that the current potential putting on the second lens is biased.The quality focused on from the image of the sample recorded by detector by visual assessment.Ion beam relative to the shaft alignement of the second lens by modulate the intensity of the second lens and evaluated-modulation amplitude-with about 0.1% of the operating voltage of the frequency of 1Hz and the second lens lentamente and observe the displacement of this feature.Ion beam in last lens is aligned by adjustment and aims at the voltage of deflector and be optimized.When the position at the center of the image by detector measurement changes indistinctively between the modulation period of the intensity of the second lens, aligning is optimized.

Then, by adjusting the intensity of the second lens, sample is imaged with higher enlargement ratio, makes the visual field of sample be about 2 squares μm.Controlled by adjustment astigmatism corrector, the asymmetry of focus is minimized.These control to be adjusted the sharpness simultaneously observing image and edge in especially all directions.When the sharpness of the image focused on is when all directions are identical, astigmatism correction completes.Typically, astigmatism corrector is not applied to realize this condition higher than the voltage of 30 volts.At that point, helium ion microscope operates completely.

The microscope of running is used to the various sample of imaging.Be illustrated in Figure 42 and 43 by the sample image measuring secondary electron record.

Image-forming condition comprises the line (100pA to 1fA) of broad range.Line is controlled by several method.First, use electronic aperture mechanism, the different aperture with the hole of different-diameter is placed into position.Aperture mechanism comprises its diameter from 5 μm to the aperture of 100 μm of scopes.Second, first lens focus intensity is adjusted so that mobile bundle intersects closer to the aperture plane in ion optics, makes larger ion current arrive sample.On the contrary, the first lens focus intensity is adjusted so that mobile bundle is farther from aperture plane, makes less ion current through aperture.3rd, in cusp field, the pressure of helium is increased or decreased respectively to increase or to reduce ion beam current.

Beam energy is typically selected for optimum angle intensity; Beam energy is typically in the scope from 17keV to 30keV.Beam energy changes in time in response to changing most advanced and sophisticated shape.

The type of detector used, and the type according to the sample checked with ion microscope being set and being selected of detector.In order to measure the secondary electron image of sample, ET detector is used, and has with the metallic grid biased relative to the about+300V of public external ground.The scintillator of ET detector inside is relative to being externally biased with+10kV, and the gain of inner PMT is adjusted to produce signal large as far as possible and unsaturated.

MCP detector (from Burle Electro-Optics, Sturbridge, MA obtain) is also used to detection from the secondary electron of sample and/or the He of scattering.MCP grid, above, the back side can eachly be biased relative to external ground.The gain of detector is obtained by the back side relative to front biased MCP rightly.Typical gain voltage is 1.5V.Adjacent to the collector plate at the back side to be biased relative to the back side+50V.From collector plate, detectable signal is the form of the electric current of the little change superposed on large positive voltage.In order to collect secondary electron, before and the grid of MCP be biased to+300V.In order to collect the He of scattering, before and grid be biased to-300V.

Grid sweep speed is adjusted for the optimal imaging condition of each sample as required.The scope of the residence time of every pixel is from 100ns to 500 μ s.For shorter residence time, carry out noise decrease by average Multiple-Scan.This is for continuous print line sweep, and carries out for continuous print frame scan.

Image shown in Figure 42 is the image of the multiple carbon nano-tube on silicon substrate.Image is obtained from the secondary electron on the surface of nanotube by detection.ET detector is located in distance apart from sample 8mm and apart from ion beam from axle 15mm, and relative to the plane of sample with the angular orientation of 20 °.He ion beam current is 0.5pA and mean ion energy is 21keV.Ion beam is scanned by grid with the residence time of the every pixel of 200 μ s, and total image detection time is 200s.The visual field of image is 4 μm.

At the image that the image shown in Figure 43 is the aluminium pillar on silicon substrate.Image is obtained from the secondary electron of nanotube surface by detection.The MCP detector of the above-mentioned type, at grid with above relative to the situation that external ground is biased with+300V, is positioned the distance apart from sample 10mm and is parallel to the planar orientation of sample.He ion beam current is 0.5pA and mean ion energy is 24keV.Ion beam is scanned by grid with the residence time of the every pixel of 200 μ s.The visual field of sample surfaces is 1 μm, is obtained to scan deflection device by the maximum voltage applying 1V.

In helium ion microscope, adopt the operation at this tip to continue the time in a few week, and without the need to exhaust system to maintain ion source.Along with trimer atom is removed, or intentionally or by normal use, most advanced and sophisticated end shape becomes more spherical, shown in the SFIM image gone out as shown in Figure 44.Carry out original position pyramid as required to build again (sharpening), by using the initial identical heat that sharpening tip is carried out in FIM and oxygen formula.Usually, respectively build the time that processes expend is less than 5 minutes again, and in addition, system is available during these weeks.In a word, tip is built more than 8 times again.Figure 45 illustrates the trimeric image of the atom built again of tip.

2.

W (111) tip to be installed in supporting component and to be electrochemically etched according to process described in example 1.Figure 46 illustrates most advanced and sophisticated SEM image.Most advanced and sophisticated geometric properties is carried out according to process in example 1.For this tip, average tip radius is confirmed as 70nm.Tip is accepted use according to standard in example 1.

After verifying that most advanced and sophisticated geometry performance is within acceptable restriction, the source component comprising etched tip is installed in the FIM described in example 1.The configuration of FIM except as noted below with discuss in example 1 identical.The current potential of+21.8kV is increased to lentamente relative to the current potential on tip of extractor.The field evaporation of sophisticated atomic occurs along with the increase of current potential.After arrival+21.8kV, most advanced and sophisticated current potential is reduced to+19.67kV.The FIM image at tip shown in Figure 47 obtains with the tip remaining on this current potential.Use this image, most advanced and sophisticated mono-crystalline structures and correct orientation are verified.

Then, most advanced and sophisticated by sharpening to produce the atom trimer on summit.Helium is pumped out FIM room, and most advanced and sophisticated passing through applies the stabling current 20 seconds of 4.3A for tip and heated.The mirror tilted to be arranged in FIM post and to get angle the light propagated along axis of a cylinder to be redirected to the side mouth of post, and this mirror is used to observe tip., for naked eyes, such tip is allowed to cooling 5 minutes not have luminescence (photon such as, launched from tip).Then the most advanced and sophisticated constant current by applying 4.4A was heated to most advanced and sophisticated 20 seconds.Do not have luminous visible for naked eyes, such tip is allowed to cooling 5 minutes.Then the most advanced and sophisticated constant current by applying 4.5A was heated to most advanced and sophisticated 20 seconds.Do not have luminous visible for naked eyes, such tip is allowed to cooling 5 minutes.Then the most advanced and sophisticated constant current by applying 4.6A was heated to most advanced and sophisticated 20 seconds.In this temperature, luminescence can be clear that from tip.Thus, the electric current needed for most advanced and sophisticated luminescence is caused to be confirmed as 4.6A.Source is allowed to cooling 5 minutes subsequently.

Then, negative bias is applied in most advanced and sophisticated electron emission stream of simultaneously monitoring from tip.Make biased little by little more negative, until observe the electron emission stream of the 50pA from tip.-1.98kV the biased of the tip of this stream.When this biased still put on tip, the heating current of 4.6A is applied in tip.Again observed most advanced and sophisticated luminous after about 20 seconds.10 seconds are extended again in the heating of the rear tip observing most advanced and sophisticated luminescence.Remove from tip subsequently and put on most advanced and sophisticated bias potential and heating current, and tip is allowed to be cooled to liquid nitrogen temperature.

Once tip cools, be then applied to tip relative to the positive potential of extractor+5kV.He gas is with 1 × 10 ^-5the pressure of Torr is directed near tip, FIM room.The FIM image of tip is as obtained as described in example 1.Along with biased increase FIM image is seen more clear.Image in Figure 48 is biased lower observed at the tip of+13.92kV.The image show the crest line of pyramid and correspond to the trimeric bright culminating point of atom.

Some transmitting atoms on tip are the adatom of loosely combination and are removed by the field evaporation of sophisticated atomic by the electric field strength increased.Most advanced and sophisticated biased is increased to+21.6kV further, and the field evaporation that passes through of the first and second trimers and being removed.After this current potential of arrival, most advanced and sophisticated current potential is reduced to+18.86kV and FIM image in Figure 49 is recorded.

According to determined standard in example 1, tip is confirmed as available and removes from FIM.After about one month, tip is mounted in the helium ion microscope as configuration as described in example 1.The technique of trimer described in example 1 is built and is evaporated repeatedly, except not using except oxygen.But, trimer is built technique again and is relied on the specific negative potential of applying to bias to tip (producing the electron emission stream of 50pA), simultaneously most advanced and sophisticated with the current flow heats putting on the 4.6A of heater line, cause the visible luminescence of heater line to continue 20 seconds.Tip to remain in helium ion microscope and provides the use exceeding surrounding, and without the need to emptying system to safeguard most advanced and sophisticated.During this period, use the process relating to the negative current potential applied as above and be biased and heat, tip is built repeatedly again.The most advanced and sophisticated trimeric SFIM image built again is illustrated in Figure 50.

The image of the semiconductor samples using the He ion microscope with this tip to record is illustrated in Figure 51.Sample comprises the aluminum metal be deposited on the surface of silicon oxide substrate.Unknown coating is deposited over the top of each these materials.

The scanning voltage of the maximum of 1V is incorporated on scan deflection device with the visual field producing 10 μm on sample.The current potential of the first and second lens, aligning deflector and astigmatism corrector is adjusted, to control the part of the He ion beam by aperture, and the quality of the bundle focus of Quality control position, as described in example 1.During imaging, sample is tilted with translation to disclose three-dimensional nature and the details of sidewall.

Image shown in Figure 51 is recorded by the secondary electron measured from sample surfaces.MCP detector is located in the distance apart from sample 10mm, and is parallel to the surface orientation of sample.MCP grid and being biased with+300V relative to public external ground above.He ion beam current is 4pA and mean ion energy is 21.5keV.Total image detection time is 30 seconds.

The image of another semiconductor samples using this tip to absorb is shown in Figure 52.Sample is the multi-level semiconductor device with the surface characteristics formed by metal.This image leaves the secondary electron of sample by measuring owing to sample and the interaction of incident He ion and is recorded.The maximum scan voltage of 150V is applied in scan deflection device to produce the visual field of 1.35mm at sample surfaces.

Sample is observed from overlooking visual angle, this illustrates many features of sample surfaces.In order to document image, the detector with the grid that is biased with+300V relative to public external ground and MCP is above located in the distance apart from sample 10mm, and is parallel to the surface orientation of sample.He ion beam current is 15pA and mean ion energy is 21.5keV.Ion beam is scanned by grid with the residence time of every pixel 10 μ s.

3.

Most advanced and sophisticated use as being produced in the process described in example 2 and aiming in helium ion microscope in this example.Most advanced and sophisticated geometric characteristicization is carried out according to process in example 1.Tip is accepted use according to the standard in example 1.

By directly or extrapolation measure, the image of sample may be obtained with known line with known detection time.Line uses Faraday cup to be accurately monitored in conjunction with picoammeter (Model 487, Keithley Instruments, Cleveland, OH).He pressure in cusp field also uses Baynard Alpert type ionization determining instrument (can from Varian Vacuum Inc, Lexington, MA obtain) and is carefully monitored.The too low to such an extent as to state that cannot be accurately measured (such as, being less than about 0.5pA) of He ion current wherein, ion current is determined according to the He gas pressure extrapolation of measuring.Typically, He gas pressure and the mutual Linear proportional of He ion current, and the linear relationship between a tip is consistent.

Sample is the golden grid sample (part number 02899G-AB obtains from StructureProbe International, West Chester, PA) with shape characteristic.Sample is imaged from the secondary of sample surfaces by measuring the incident He ion of response.In order to document image, the annular of 40mm diameter, chevron type MCP detector (from Burle Electro-Optics, Sturbridge, MA obtain) is located in the distance apart from sample 10mm, and is parallel to the surface orientation of sample.Detector occupies the solid angle of about 1.8 surface of spheres and symmetrical relative to ion beam.Detector is directly installed on the bottom of the second lens, as shown in Figure 66.The front surface of MCP is positively biased (+300V) relative to public external ground, and there is the interior metal grid (+300V) of positive bias (relative to public external ground).

Mean ion energy is 20keV.The image of sample uses the beam current measurement of 1pA, 0.1pA and 0.01pA respectively, and respectively shown in Figure 53,54 and 55.Total image detection time is 33 seconds, 33 seconds and 61 seconds respectively.

For the first two image (Figure 53 and 54), picture size is 1024 × 1024 pixels.For the 3rd image (Figure 55), picture size is 512 × 512 pixels.In each image, the maximum scan voltage of about 2V is applied in scan deflection device to produce the visual field of 20 μm at sample surfaces.

In order to the helium ion and/or neutral atom that confirm scattering contribute to these images be recorded indistinctively, grid and MCP bias potential change to-50V, and do not have signal to be observed.The noise component of these images is confirmed to be the noise component lower than obtaining with the SEM image of identical total detection time sample for phase homogeneous turbulence, identical pixel quantity.

4.

Most advanced and sophisticated use the method as described in example 1 to be installed in supporting component and manufactured, except in supporting component, two pillars being pasted to source base by prebuckling opposite each other, as shown in Figure 56.This bending heater line that allows crosses significantly shorter length.Heater line is the polycrystalline tungsten line with 180 μm of diameters as described in example 1.Adopt this bending pillar, the heater line length of 5mm is used.The advantage of shorter heater line length is that the rigidity of the length of line increases along with the reduction of line length.Transmitter line is fixed in the usual manner as described in example 1.

The rigidity added of shorter heater line is observed by applying identical power to a two different tip, and a tip is installed in the supporting component of the type described in example 1, and another is arranged in the supporting component shown in Figure 56.Compared in response to two of the power be applied in most advanced and sophisticated deflections.Compared with a support group of example 1 type, the amount of curved struts supporting component deflection is little 6 times.As a result, the frequency of natural vibration (about 4kHz) of bending column support type supporting component is than high about 2.5 times of the frequency of natural vibration of the supporting component of example 1.At higher frequencies, when being energized in the remarkable vibration frequency lower than frequency of natural vibration, (such as, having negligible phase shift) is as one man moved at a support group and tip.When implementing in He ion microscope, the vibration at tip relatively low in curved struts source component reduces ion microscope image and has appreciable image artifact, such as, owing to the possibility of the bundle landing errors of tip vibrates.

5.

Tip is produced, except employing different heater line according to process described in example 1.Heater line used in this example have than the heater in example 1 diameter larger about 25% diameter.Thicker heater line is less relative to oscillating movement is obedient to, because usually, the rigidity of line increases along with diameter and increases.In addition, this thicker heater line is formed (74% tungsten, 26% rhenium) by tungsten-rhenium alloy.Described alloy wire has significantly higher resistive than the tungsten heater line of example 1; The resistance of total heater line is measured as about 0.5 ohm.Suitable tungsten-rhenium alloy line obtains from OmegaEngineering (Stamford, CT).

Thicker heater line adds the natural frequency comprising most advanced and sophisticated supporting component, is increased to about 2.2kHz (this example) from about 1.5kHz (example 1).When implementing in He ion microscope, adopting the vibration at tip relatively low in the source component of this heater line assembly to reduce ion microscope image and there is appreciable image artifact, such as, owing to the possibility of the bundle landing errors of tip vibrates.

6.

Most advanced and sophisticated to be formed by such as technique described in example 1, except heater line alternative by RESEARCH OF PYROCARBON block (from MINTEQ International Pyrogenics Group, Easton, PA obtain) outside.The pillar of source component is bent opposite each other and is machined to have parallel flat surfaces.In order to install transmitter line, pillar is pried open and two pieces of RESEARCH OF PYROCARBON are inserted between pillar.Transmitter line to be placed between described carbon block and to be released with back prop.Be applied to pressure grip block and the appropriate location of transmitter line on supporting component of carbon block by pillar, avoid transmitter line relative to the relative motion of a support group.A part for supporting component shown in Figure 57, comprises bending pillar, two carbon blocks and transmitter line.

The size of RESEARCH OF PYROCARBON block is selected, and makes carbon block and transmitter line be in pressured state.Do not having the situation of carbon block in position, the interval between curved struts is 1.5mm.The each length of 700 μm had along the direction between two curved struts of carbon block.Transmitter line has the diameter of 250 μm.

RESEARCH OF PYROCARBON block relative to curved struts in order to maximum resistance and minimum thermal conductivity and orientation (the carbon plane such as, in RESEARCH OF PYROCARBON block is approximately perpendicular to the line orientation of connecting struts).The resistance of supporting component is measured as 4.94 ohm at 1500K, larger than the resistance (0.56 ohm) of the supporting component of example 1.Power needed for heated tip to 1500K is 6.4W (compared with the tip in heating example 1 to the about 11W needed for 1500K).Tip is clamped, due to the disappearance of heater line relatively securely relative to source base.The vibration frequency of this supporting component is greater than 3kHz.

When in helium ion microscope during embodiment, most advanced and sophisticated relatively low vibration in this source component-by put on the either side at tip RESEARCH OF PYROCARBON block pressure and fixing in place-reduce ion microscope image and there is appreciable image artifact, such as, owing to the possibility of the bundle landing errors of tip vibrates.

7.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Most advanced and sophisticated in FIM the process described in use-case 1 by sharpening.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (configuration similar in appearance to the detector described in example 3) is used to record sample image.

Sample is steel, and shape is sphere and uniform ingredients.He ion current is 1.0pA and mean ion energy is 20keV.Ion beam is scanned by grid with the residence time of the every pixel of 10 μ s.The maximum potential (about 100V) putting on scan deflection device produces the visual field of about 1mm at sample surfaces.

The image of sample is shown in Figure 58.Image reflects the measurement of total secondary electron productive rate of sample.Image discloses the secondary electron productive rate of the raising in right hand edge.The productive rate improved, from the path of the increase of the ion beam close to sample surfaces, can be escaped at the surface second electronics of sample.Find that the increase of secondary electron productive rate is roughly proportional with sec (α), α represents the angle between incident He ion beam and the normal of sample surfaces here.

The image of the second sample is shown in Figure 59 A and 59B.The image-forming condition of the sample shown in Figure 59 A with in this example in conjunction with the first sample discuss identical.

At the energy of 20keV, He ion beam penetrates into sample (about 100nm) dearly and just disperses significantly.As a result, the edge of sample image illustrates relatively narrow bright border effect (edge blurry such as, reduced).Such as, the image in Figure 59 A is recorded from He ion microscope, and the image in Figure 59 B uses standard SEM record.In both images, signal is all only from the measurement of secondary electron.In the SEM image shown in Figure 59 B, SEM works under the image-forming condition of 2keV electron beam energy and 30pA line.

Observe bright border identifiably narrower in He ion microscope image, this believes compared with the electronics of incidence, in the result of the less interaction volume of sample surfaces He ion.When He ion beam penetrates sample, He ion beam keeps relative calibration.On the contrary, SEM electron beam is being directly adjacent to the sample surfaces interaction volume that just generation is significantly wider.As a result, the secondary electron produced by the electron beam of incidence comes from the surface region extending several nanometer from the position of the nominal electron beam surface.As a result, the bright border effect of SEM is significantly wider, as what can be seen by the image in visual comparison Figure 59 A and 59B.

In order to numeral compares the bright border effect in these two images, in each image, cross common edge feature carry out line sweep.Result is shown in Figure 67 A and 67B, and it corresponds respectively to Figure 59 A and 59B.Line sweep district is that wide 50 pixels of 1 pixel are long.Corresponding to the intensity peak in the line sweep of limit feature, in the He ion microscope image in SEM image than in correspondence, there is the full width at half maximum (FWHM) (FWHM) of wide 40%.As mentioned above, the hem width degree of the reduction observed in He ion microscope image is relative to the result of electronics at the less interaction volume of sample surfaces He ion.

8.

Most advanced and sophisticated to be produced according to the such as process described in example 1, and the characterization of tip geometry performance is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 in FIM by sharpening.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of its configuration is as described below.

Microscopic system is configured, to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (as described in example 3) is used to record sample image.

Various sample is measured to determine the secondary electron productive rate of many materials quantitatively.Each sample is made up of the flat panel of material that will be tested.Being positioned at the distance of 2mm above sample, is the metal screen with low fill factor (such as, great majority are open spaces).Picoammeter (Keithley InstrumentCorporation, Cleveland, OH) is combined with Faraday cup and is used to sample flow, and Faraday cup is integrated into each sample by machining grooves in the surface of each sample.

Each experiment starts with the measurement of the He ion current by location He ion beam, makes on the Faraday cup of He ion beam incidence in each sample.Then, by the scanned sample of He ion beam grid, be applied to screen relative to the variable bias of public external ground simultaneously, and measured from the secondary electron stream of sample.

He ion beam is intentionally defocused (spot size to 100nm) pollutes or charged artefact to minimize.Screen bias potential is adjusted from-30V to+30V with increment, and carries out the measurement of secondary electron stream for each bias potential.The He ion beam energy of each measurement 22.5keV and the line of 13pA carry out.The result illustrating silicon sample in Figure 60.

On the left side of figure, screen is negatively biased here, and all secondary electrons leaving sample due to sample and the interaction of incident He ion are returned to silicon sample.He ion beam current and secondary electron stream roughly equal, thus produce can the free secondary ion of negligible number and the helium ion that is scattered.On the right of figure, screen is positively biased here, and all secondary electrons leaving sample due to sample and the interaction of incident He ion accelerate to leave sample.The sample stream measured be He ion current and secondary electron stream and.Measuring according to these, is about (44-13)/13=2.4 for the secondary electron productive rate of 22.5keV helium bundle incidence (vertical incidence) on smooth silicon sample.

Under the measuring condition of pixel, similar measuring process is followed for various material.Result is summed up in table below.

Material	Secondary electron productive rate
		Aluminium	4.31
Silicon	2.38
		Titanium	3.65
Iron	3.55
		Nickel	4.14
Copper	3.23
		Indium	4.69
Tungsten	2.69
		Rhenium	2.61
Platinum	7.85
		Gold	4.17
Plumbous	4.57

These relatively large secondary electron productive rates, and the value of the broad range of different materials, result in common observation, namely provides a kind of good method distinguishing different materials according to the He ion microscope image of the detection of secondary electron.For example, Figure 61 A uses helium ion microscope record, substrate surface is aimed at the secondary electron image of cross (alignment cross).The scanning voltage of about 1.5V maximum is incorporated on scan deflection device with the visual field producing 15 μm on sample.MCP detector is located in the distance apart from sample 10mm, and is parallel to the surface orientation of sample.The grid of MCP and being biased with+300V relative to public external ground above.He ion beam current is 5pA and mean ion energy is 27keV.Ion beam is scanned by grid with the residence time of the every pixel of 150 μ s.

Figure 61 B is the SEM secondary electron image taking from same characteristic features.SEM works testing under the optimal imaging condition determined, and these conditions are the electron beam energy of 2keV and the line of 30pA.Other line, sweep speed and beam energy are attempted, but none provides better contrast.

He ion microscope image shows the larger contrast formed between the different materials aiming at cross, because the He ion beam of incidence is relative to the larger difference of electron beam on secondary electron productive rate of incidence.Aim at the bi-material in cross can easily in the image of Figure 61 A by visual identity.But as observed qualitatively in Figure 61 B, for the incident beam of SEM, bi-material has similar secondary electron productive rate.

9.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (as described in example 3) is used to record sample image.The front end of MCP is biased to+100V relative to public external ground, and the grid before it is also like this.In the configuration, MCP can collect nearly all interaction due to sample and incident He ion and leave the secondary electron of sample, except the secondary electron produced in the district of the sample be positively biased.These electronics due to positive potential biased and return sample instead of completely from sample by liberation and detect by MCP.

Due to the positive charge reached from the He ion beam of incidence, and the negative electrical charge left (secondary electron), the district of sample is positively biased.The size of the voltage bias introduced on sample for given He ion beam current depends on electric capacity and/or the resistance in the district that sample is exposed, relative to the periphery of sample.These difference cause the collection of the different secondary electron of different sample areas, electric capacity per sample and/or resistance characteristic.The difference that the secondary electron be detected is collected produces the contrast of the image of the sample using He ion microscope record.In this way, the electrical characteristics of sample are determined according to secondary electron image.

In Figure 62, show the secondary electron image of sample.The feature of sample is the one group of aluminum steel be deposited on the surface of dielectric substrate.The scanning voltage of maximum 3V is incorporated on scan deflection device so that the visual field of generation 30 μm on sample.He ion beam current is 5pA and mean ion energy is 26keV.Ion beam is scanned by grid with the residence time of the every pixel of 100 μ s.

Sample image shows a series of bright, periodic aluminum steel.Space between these bright lines is a series of concealed wire.Middle bright line in image shows clearly border, is dark in this outside line.Character per sample, bright line has low resistance path for ground, or may have very high electric capacity relative to ground, and thus they are not biased because of the effect of He ion beam substantially.

Concealed wire is positively biased under the impact of He ion beam, and the secondary electron thus produced here turns back to sample.In order to determine whether that this effect is owing to the electric capacity of concealed wire or resistance characteristic, concealed wire is observed a period of time under He ion beam.If this effect is capacitive, then along with the time, line becomes that darkness deepens in the past.

For centre aluminum steel from the bright existence that the electricity such as line can be indicated to disconnect to dark transformation.Bright part below line may not with the complete electrical contact of dark part of line above.Figure 63 shows the image of another sample using above-mentioned measurement configuration record.Sample comprises the line and further feature that are formed by copper on a silicon substrate.Minimum feature is the form of multiple letter (" DRAIN ").Positive potential in these features is biased along with the process of temporal image detection and increases, and its evidence is that the bottom that the top observing each letter shows bright and each letter shows secretly.Grid scanning is in the images carried out from top to bottom.As a result, the bias scheme on the surface of sample is mainly capacitive.

10.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (as described in example 3) is used to record sample image.The front end of MCP is biased to+300V relative to public external ground, and the grid before it is also like this.In the configuration, the signal of measurement is almost complete in secondary electron.This to-300V, does not change MCP gain by biased MCP front end, and observes the signal measured and be reduced to and be verified close to zero.

The scanning voltage of 3V maximum is incorporated on scan deflection device so that the visual field of generation 30 μm on sample.He ion beam current is 10pA and mean ion energy is 22keV.Ion beam is scanned by grid with the residence time of the every pixel of 100 μ s.

The sample comprising 3 different layers is imaged.Uppermost metal level is made up of the line of composition, and this line is formed by copper.Lower one deck is made up of dielectric material.The metal level of different compositions that the layer of bottom is formed by copper by another is formed.The image of sample is shown in Figure 64.Image clearly show uppermost metal layer pattern with brilliant white, is superimposed upon on the grey characteristics of image corresponding to bottom (under surface) metal level.Subsurface metals layer looks comparatively dim and fuzzy a little in the images.

The signal measured is the result of the secondary electron produced by the He ion of scattering and neutral He atom on the surface of sample.This assessment is by negative bias MCP and screen and attention does not almost have signal be detected and be verified.The secondary electron leaving sample due to sample and the interaction of incident He ion produces the image of the layer on surface of metal in Figure 64.The image of subsurface metal level penetrated into sample and become the He ion of neutralization produce.Neutral He atom is from sub-surface scattering, and its part is back to surface, and there when it departs from, they produce secondary electron.Which illustrate the fuzzy and dim image of subsurface characteristics.

11.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (as described in example 3) is used to record sample image.The front end of MCP is biased to+300V relative to public external ground, and the grid before it is also like this.In the configuration, the signal of measurement is almost complete in secondary electron.This to-300V, does not change MCP gain by biased MCP front end, and observes the signal measured and be reduced to and be verified close to zero.

The scanning voltage of 15V maximum is incorporated on scan deflection device so that the visual field of generation 150 μm on sample.He ion beam current is 10pA and mean ion energy is 21.5keV.Ion beam is scanned by grid with the residence time of the every pixel of 100 μ s.

The sample be imaged is made up of tungsten weldment.Tungsten to be heated on its fusing point and to be cooled subsequently, forms different domains, has the precipitous border between crystal grain.Sample is by measuring the secondary electron and imaging that leave sample due to sample and the interaction of incident He ion.

The image of sample is shown in Figure 65.Image shows distinct brighter and darker crystal grain.Be overlapped in the bright characteristics of image being across several crystal grain in this background.Bright feature corresponds to surface topography fluctuating pattern, which increases the secondary electron produced due to pattern effect disclosed herein.The contrast images intensity of various crystal grain is owing to the relative orientation of domain relative to the He ion beam of incidence.When tungsten lattice in specific crystal grain be oriented make He ion beam almost be parallel to low index crystallographic direction enter time, the probability be scattered on surface is low, and makes ion beam penetrate particle dearly.As a result, relatively low at the secondary electron productive rate on the surface of material, and crystal grain is shown as darker in the picture.Otherwise when in concrete crystal grain, tungsten lattice is oriented and makes He ion beam incidence on high index crystallization direction, the probability be scattered on the surface of crystal grain is high.As a result, relatively high at the secondary electron productive rate on the surface of material, and crystal grain looks brighter in the picture.

12.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure the secondary electron leaving sample due to sample and the interaction of incident He ion.MCP detector (as described in example 3) is used to record sample image.The front end of MCP is biased to-100V relative to public external ground, and the grid before it is also like this.In the configuration, because the negative potential applied is biased, secondary electron does not arrive MCP.The signal measured by MCP is from the He ion of the scattering be incident on before MCP and neutral He atom.

The scanning voltage of 15V maximum is incorporated on scan deflection device so that the visual field of generation 150 μm on sample.He ion beam current is 10pA and mean ion energy is 21.5keV.Ion beam is scanned by grid with the residence time of the every pixel of 100 μ s.

The sample be imaged is the tungsten welding sample be also verified in example 11.As previously mentioned, tungsten welding comprises specific domain, has the precipitous border between crystal grain.

Sample is by detecting the abundance of the He atom that is incident on MCP and He ion and imaging.The image of the sample using this measuring process to obtain is shown in Figure 68.Image shows bright and dim crystal grain.For specific crystal grain, if tungsten lattice is oriented when making He ion beam incident along relatively low index crystallographic direction in crystal grain, there is the low probability of He in the surface scattering of crystal grain.As a result, before scattering occurs, ion beam penetrates crystal grain relatively deeply.As a result, He ion (or He neutral atom, when the electronics of He ion in sample in conjunction with time produce) less may leave sample and detect by MCP detector.In the image be recorded, the crystal grain with these characteristics is shown as secretly.

Otherwise, if tungsten lattice is oriented when making He ion beam incident along relative high index crystallization direction in crystal grain, there is the high probability of the surperficial He scattering at crystal grain.As a result, before scattering ion beam to penetrate crystal grain average relative shallow.As a result, He ion and/or neutral He atom relatively more may leave sample surfaces and detect by MCP detector.Therefore, in the image shown in Figure 68, the crystal grain relative to incident He ion beam with high index crystal orientation is shown more bright.

With reference to the image shown in Figure 65, the topographical information in the image of Figure 68 reduces significantly, because image is recorded according to the He particle of scattering instead of secondary electron.Particularly, a series of bright line majorities appeared on the image in Figure 65 are removed from the image Figure 68.The disappearance of topographical information makes the image in Figure 68 relatively more easily explain, the measured intensity especially in Figure 68 is used to the situation of the crystallization property (such as relative orientation) of the domain quantitatively determined in sample.

13.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, so that the He ion from sample scattering measured in response to the He ion of incidence and neutral He atom.The MCP-of detector-reduce is installed on the axle of motor.Copper strips is used to cover before MCP so that the measurement of the He ion of restricted passage MCP and/or neutral atom.Small sircle hole in copper strips allows the He ion of scattering and/or neutral atom to arrive MCP, only when particle drops within narrow angular range.In this example, the measurement of He ion and/or neutral atom is constrained to correspond to the angular range of 0.01 surface of sphere.Be biased to-100V relative to public external ground before copper strips and MCP, make secondary electron not enter MCP detector.

Detector is located in the distance apart from sample 30mm.Motor allows MCP detector relative to rotary sample.To leave He ion and/or the neutral atom of sample in the range detection of different angles.Typically, such as, electrode allows the rotation of about 180 ° of MCP.

Sample is the copper ball that diameter is approximately 1mm.Motor, relative to Sample location, makes sample locate along the axle of electrode axis.Copper ball sample, when being exposed to He ion beam, due to the shape of sample surfaces, provides scattering He ion and neutral atom with wide angular range.Namely by the He ion-beam scanning of incidence being crossed the surface of sample, various different incidence angle (angle such as, between He ion beam and sample surfaces normal) can be realized.Such as at the center of copper ball, the incidence angle of He ion beam is 0 °.At the edge (view from He ion beam) of ball, incidence angle is approximately 90 °.Centre position between the center and peripheral of copper ball, from simple trigonometry, incidence angle is about 30 °.

Under sample is positioned in He ion beam, and detector is located relative to sample, as mentioned above.He ion beam current is 15pA, and the mean ion energy in He ion beam is 25keV.The maximum voltage of 100V is applied to scan deflection device to produce the visual field of 1mm at sample surfaces.From the second lens of microscopic system to the distance (such as, operating distance) of sample be 75mm.This provide the enough open spaces allowing MCP detector relative to rotary sample.

Measure and record the position of copper ball by the angle of 180 ° of scopes when the inswept hemisphere arc relative to sample of detector and carry out.The surface of sample is divided into both sides by He ion beam effectively, and due to the nonreentrant surface of copper ball, He ion and the neutral He particle of scattering only can be detected from detector by the side of locating.As a result, in Figure 69 A, the intensity distributions of the image of sample appears as crescent, has corresponding to the clear zone on the left side of the position of detector.The right side of sample is relatively dark, owing to leaving the He ion of the scattering on the surface of sample and neutral He particle in this direction, they is not detected measured by device.

By increasing the angle of detector and have recorded the continuous print image of sample between each image.Altogether obtain the image of 20 samples, stride across the sweep limits of detector.The information that some image does not provide, because detector is located so that it blocks incident He ion beam, prevents He ion incidence on the surface of the samples.The image with the sample being positioned almost direct detector record above sample and on the right side of sample is corresponded respectively at the image shown in Figure 69 B and 69C.In Figure 69 C, crescent intensity distributions is observed similar in appearance to distributing line viewed in Figure 69 A.

According to the qualitative detection of image of record, the image that the topographical information of obvious sample can be used in the detector measurement of off-axis position is determined (such as, Figure 69 A and 69C).Measure from these the information that obtains to measure with the secondary electron of sample and combine, such as, to determine whether that viewed image comparison is the surface topography due to sample in secondary electron image, or due to another contrast mechanism, the charged or material composition of such as sample.Adopt the detector in known location, according to the image be recorded, the protuberance on the surface of sample and depression can be distinguished.Little detector acceptance angle and can also be used for determining the quantify surface fluctuating information of sample (such as the known location of the detector of the image of each record, highly), utilize incident He ion beam relative to the known angle of surface characteristics by the shadow length of surface characteristics in measurement image.

The image of sample further discloses, and according to the orientation of detector relative to sample, bright edge effect is shown at some edge of sample, and other limit shows dim edge effect (see Figure 69 A, such as).This information is used to the design of the detector configured to reduce the measurement of topographical information from sample.Probe designs balances search angle to provide close to uniform edge effect.As a result, the image shows of the sample of such as copper ball goes out uniform brightness, and the change of intensity is from the differences in materials in sample.

From the view data of sample record analyzed in case determine sample surfaces by the intensity in region selected how along with detector is changed by scanning.The change of intensity owing to the angle distribution of the He ion and He neutral atom that leave sample surfaces, and this analysis provides the information of angle distribution, and these information are sometimes referred to as transmitting lobe.

Figure 70 A illustrates the image of the sample with the incident He ion beam of employing close to the detector record on axle, and namely detector is with the He ion of the angular surveying scattering of about 0 ° and neutral He atom.The district of the sample surfaces indicated by rectangle frame, is isolated into a series of image and is subject to further analysis.In the figure shown in Figure 70 B, thick horizontal line schematically shows the surface of sample, and thin vertical line represents incident He ion beam.Point represents the He ion of scattering and the neutral He atom average measurement intensity at different detector positions.Point is plotted in polar coordinates, here polar initial point be sample surface on the incidence point of He ion beam.The Angle Position of set point corresponds to the Angle Position of detector, and from initial point to the average measurement intensity of the radial distance of each point representative at specific angle detector position.Analyze each independent image corresponding to the sample of different detector positions, to be provided in the angle intensity shown in Figure 70 B.Each point corresponds to the image at different detector position records.

The polar coordinate array of point defines launches lobe figure.Figure is annular (except ion beam is detected several points lost that device blocks) in shape substantially, and corresponds to the cosine distribution around initial point.

In Figure 71 A, the instruction of the image of sample uses the rectangle frame of the not same district of the sample surfaces of Multi-example graphical analysis to illustrate, to determine the angle intensity distributions of He ion from the scattering of sample and neutral atom.In this situation, scattering or angle of reflection are about relative to incident He ion beam 40 °.

The polar diagram of the angle emissive porwer shown in Figure 71 B is to construct in conjunction with the mode described in above-mentioned Figure 70 B.Preferentially be directed in the shape instruction scattering/transmitting of the lobe of this angle and leave incident He ion beam.

This analysis repeats (corresponding to various different angle) in the various different district of sample surfaces, to build the relative complete image of the He ion of the scattering of the function of the angle as copper ball sample and the distribution of neutral He atom.

14.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, so that the He ion from sample scattering measured in response to the He ion of incidence and neutral He atom.MCP detector (as described in example 3) is used to record sample image.The front end of MCP is biased to-300V relative to public external ground, and the grid before it is also like this.In the configuration, the negative potential owing to applying is biased secondary electron and does not arrive MCP.The signal measured by MCP is from the He ion of the scattering be incident on before MCP and neutral He atom.From the angle of sample, MCP detection He ion and the solid angle of He atom from about 1.8 surface of spheres in.Solid angle relative to incident beam azimuthal symmetry, as shown in Figure 66.

From example 13, bright and the dark limb effect observed for copper ball provides the information of design about detector and configuration, when detector be used for by measure the He ion of scattering and/or neutral atom and Imaged samples time, the amount of the topographical information reduced in the signal measured, and reflect the difference of the difference of material composition instead of the local surfaces pattern of sample more accurately.For the MCP detector shown in Figure 66, the reduction according to the topographical information in the image that the He ion of scattering and the measurement of neutral He atom are formed can be observed, if MCP is located in the operating distance apart from the about 25mm of sample.

The sample comprising different materials can be imaged subsequently and material is reliably visually distinguished mutually.Comprise the sample-Ni-based layer of 4 kinds of different materials, carbon coating, copper grid and gold thread-use He ion microscope to be imaged.He ion beam current is 1.1pA and average He ion energy is 18keV.The maximum voltage of 4V is applied in scan deflection device to realize the visual field of 40 μm at sample surfaces.Total image detection time is 90 seconds.

The image of gained is shown in Figure 72.Each for kind of the different materials of 4 in sample, observes different intensity.This is the consequence of following truth, and the scattering probability being namely incident on the He ion on certain material depends on the atomic number of material.In Figure 72, the material even with similar atomic number also can be distinguished.Such as, copper (atomic number 29) can visually be distinguished with nickel (atomic number 28).

Figure 73 shows the image of the sample of the layers of copper be included in below silicon wafer, has the oxide skin(coating) of cover wafers.Image uses and configures to obtain the detection He ion of scattering and the He ion microscope system of neutral He atom and measured, as not long ago in this embodiment as described in.Sample comprises by guiding laser to be incident on sample surfaces by the surface texture featur produced.Laser causes the explosivity of layers of copper below to erupt.The vision-based detection of image discloses the image comparison (such as, image intensity change) from the different materials existed in the sample to which.From the image of the image such as among Figure 73, the distribution of different materials in sample can be determined.

15.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure the photon in response to the He ion beam of incidence from electromagnetic radiation.The image of sample is constructed from the signal produced by photomultiplier (model R6095, Hamamatsu PhotonicsK.K., Toyooka, Japan).Photomultiplier has the window of end (end-on) forward, relatively high quantum efficiency, and the wide spectral response from 200nm to 700nm.Pipe adopt can be increased to 1200V signal gain run, or to output signal arriving signal chain white-noise level and insatiety and situation.Photomultiplier is located in distance apart from sample 15mm and is oriented in the face of sample, in the configuration, and the solid angle of about 2 surface of spheres of pipe subtend.

The sample of sodium chloride (NaCl) uses photomultiplier tube detectors to be imaged.Measure for these, He ion beam current is 10pA and average He ion energy is 25keV.The sample residence time of the every pixel of 500 μ s is scanned by grid.The maximum voltage of 150V is applied in scan deflection device to produce the visual field of the 1.35mm of sample surfaces.

The image of sample is shown in Figure 74.Image comparison (change such as, in image intensity) is obvious in different NaCl crystal.Photon can be produced by two different mechanism in the sample to which.First, photon can be produced by the process similar in appearance to cathodoluminescence viewed in SEM image.In this mechanism, the atom of sample is energized to higher energy state.Photon is launched in follow-up de-energisation process.When the He ion from incident beam is back to low layer energy state, photon is launched.

Be exposed to He ion beam and comprise plastics, scintillator and organic material from other sample that its photon launched is detected.

16.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Tip is biased with+19kV relative to extractor, and He gas is with 2 × 10 ^-5the pressure of Torr is introduced near tip.Faraday cup is placed on outside the second lens, and the first lens and aligning deflector are used to focused beam, make substantially to derive from all He ions of one of most advanced and sophisticated trimer atom through aperture (diameter 600 μm, be positioned apart from most advanced and sophisticated 370mm), and the substantially all He ions deriving from two other most advanced and sophisticated trimer atom are by aperture blocking.After passing aperture, He ion beam is entered Faraday cup by the first lens focus.In the configuration, astigmatism corrector, scan deflection device and the second lens are closed.

The total He ion current deriving from sophisticated atomic uses picoammeter (model 487, KeithleyInstruments, Cleveland, OH) to be measured as 300pA in conjunction with Faraday cup.Faraday cup is cylindrical metal cup, have about 6 to 1 dark-diameter ratio.

After this, the first lens are closed.The each He ion produced at tip continues, with straight line travelling, to disperse from tip.Aperture intercept most of He ion beam and allow its only a small amount of central part pass downwardly through remaining ion column further.Part through the He ion beam in aperture is measured with Faraday cup, produces the He ion current of the measurement of the 5pA through aperture.He ion beam current (5pA) through aperture is calculated as divided by the solid angle in the aperture with regard to most advanced and sophisticated angle after the angle intensity of He ion beam.The semi-cone angle formed by summit and the aperture at tip is calculated as tan ^-1(0.300/370)=0.046 °=8.1 × 10 ^-4radian.Corresponding solid angle is calculated as 2.1 × 10 ^-6surface of sphere (sr).According to solid angle, the angle intensity of He ion beam is confirmed as 2.42 μ A/sr.

The ionogenic brightness of He is determined from the angle intensity of He ion beam and virtual source size.Virtual source size is estimated by checking the FIM image at the tip of recording during the sharpening at tip.From this image, the independent ionization dish obviously corresponding to most advanced and sophisticated trimer atom is nonoverlapping.In addition, to be spaced about 5 dusts from the crystallization of tungsten known trimer atom.Therefore, actual ionization dish is estimated to have the diameter of about 3 dusts.

Virtual source size is less than actual ionization district usually.Virtual source size uses previous discussed common process to determine: once ion (such as, the district near most advanced and sophisticated and extractor) outside ionogenic electric field region, by the asymptote track of backprojection 100 He ions.Backprojection track moves more close to each other, until it passes the district in wherein their mutual spatially immediate spaces, and subsequently, they are dispersed again.The circular diameter in the immediate space of backprojection is defined as virtual source size.

As coboundary, we use the diameter of value as virtual source of 3 dusts.Be configured to the situation partially passing through aperture of the He ion beam allowing only to originate from single sophisticated atomic at microscope, virtual source size can be less significantly.Brightness is calculated as the area A of angle intensity divided by virtual source size, A=π (D/2) ².Ionogenic brightness is 3.4 × 10 ⁹a/cm2sr.

The brightness reduced is calculated as brightness except the voltage (such as, being applied to most advanced and sophisticated voltage bias) for extraction bundle.The most advanced and sophisticated voltage for extractor is 19kV, and the brightness of this reduction is 1.8 × 10 ⁹a/m ²srV.

Etendue is the measurement of the virtual source size of He ion beam and the product of its angular divergence (as solid angle).Use the above-mentioned brightness determined, etendue is confirmed as 1.5 × 10 ^-21cm ²sr.

The etendue reduced is that etendue is multiplied by He ion beam voltage.The etendue reduced, according to the etendue of above-mentioned calculating, is confirmed as (using the most advanced and sophisticated bias voltage of+19kV) 2.8 × 10 ^-17cm ²srV.

17.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to use ET detector measurement secondary electron.Detector is located in the distance of vertical range sample (being parallel to He ion beam) 10mm, is placed on horizontal from sample 25mm, and to sample inclination.ET screen is biased with the current potential of+300V relative to public external ground.

He ion beam current is 1pA, and intrafascicular mean ion energy is 22keV.He ion beam with the residence time of the every pixel of 100 μ s by the surface of the scanned sample of grid.The maximum voltage of 100mV is applied in scan deflection device to produce the visual field of 1000nm on sample surfaces.

Sample comprises the surperficial Shang Jin island being formed at carbon substrate, and obtains from Structure Probe Inc. (West Chester, PA).The image of the sample of above-mentioned measurement configuration record is used to be illustrated in Figure 75.The district being overlapped in the sample image indicated by the rectangle on the image in Figure 75 is selected, so that the quality of edge contrast that inspection He ion microscope is observed.The district indicated by rectangle comprises subvertical Phnom Penh.Described district comprises 20 row, and each row has 57 pixels.Shown in Figure 76 by the expander graphs in the district selected.

Analyzed individually as follows by each row of the image area selected.First, in order to noise decrease, each row Gaussian core of the bandwidth of 3 pixels uses MathCAD ksmoot function (PTC Inc., Needham, MA)) and by smoothly.Figure 77 shows curve chart, it depicts certain line (line #14) before level and smooth (point) and smoothly after the intensity level of pixel of (curve).Vertical axis corresponds to image intensity, and scope is from 0 (black) to 255 (in vain).Trunnion axis corresponds to pixel number, and scope is from 0 (left side) to 57 (the right).

For at image by each intensity line-scan in the district selected, the bright center to dark transformation of left-to-right is determined by finding the minimum value of the first derivative of intensity line-scan.For having the dark limit to bright transformation of left-to-right, the center of transformation is by determining the position of the maximum of the first derivative of intensity scan line and found.

Each line is trimmed subsequently to comprise just in time 21 pixels.10 pixels before correction operation makes transition point, this transition point and 10 pixels after this transition point are retained in each line.The intensity level of 5 pixels started in the line be respectively trimmed is identified as the value of 100% by average together and mean value.The intensity level of 5 pixels last in the line be respectively trimmed is identified as the value of 0% by average together and mean value.Smoothed data from each line sweep is readjusted according to the value of 100% and 0% subsequently.The data readjusted from Figure 77 are illustrated in Figure 78.

With reference to Figure 78, the value of 75% and 25% with reference to 0% and 100% value and determined.The spot size of He ion beam is confirmed as the separation along trunnion axis between 25% and 75% value subsequently.According to the data in Figure 78, spot size is confirmed as 3.0 pixels.Pixel Dimensions is used in the known visual field in measurement configuration and the pixel count in image is converted into nanometer.For this measurement, visual field is 641nm, and strides across visual field and there are 656 pixels.Thus the spot size of He ion beam is confirmed as 2.93nm.This each line for 20 lines in the district of the selection of image is repeated, and described result by average to produce the average He ion beam spot spot size of 2.44nm.

18.

Most advanced and sophisticated to be produced according to such as the process as described in example 1, and the characterization of the geometry performance at tip is carried out as described in example 1.Tip is accepted use according to the standard in example 1.

Tip is used in the process described in example 1 by sharpening in FIM.Tip is mounted subsequently and is configured in He ion microscope.Microscopic system is configured as described in example 1, and the change of configuration is as described below.

Microscopic system is configured, to measure in response to the He ion of incidence and to leave the He ion of the scattering of sample surfaces and neutral He atom.As the MCP detector described in example 3 is located in the distance apart from sample 10mm.Be applied in MCP grid and above biased relative to the current potential of externally 0V.

He ion beam current is 1pA and average He ion beam energy is 26keV.He ion beam with the residence time of the every pixel of 100 μ s by the surface of the scanned sample of grid.The maximum potential of 1.30V is applied in scan deflection device to produce the visual field of 13 μm at sample surfaces.

Sample comprises the silicon wafer substrate with the surface characteristics formed by polysilicon, and it is recognized as Metrocal and obtains from Metroboost (Santa Clara, CA).Sample is oriented and makes He ion beam incident with the angle vertical relative to sample surfaces.Sample is biased to-19.4kV relative to public external ground, and the He ion making incident ion intrafascicular arrives sample with the landing energy of 6.6keV.Large electric field between sample and MCP detector avoids secondary electron to arrive detector.Substantially all secondary electrons leaving sample turn back to sample surfaces under the impact of this electric field.As a result, the He ion of MCP detector measurement scattering and neutral atom.The neutral He atom being detected device measurement has the ceiling capacity of 6.6keV, and the He ion being detected device measurement is accelerated to the ceiling capacity of 26keV when it arrives MCP.

Figure 79 shows the image of the sample using above-mentioned measurement configuration record.Various features on sample surfaces have the intensity of relatively uniform measurement, and different from the intensity of substrate.The vision-based detection at the edge of surface characteristics discloses does not exist obvious bright border effect (such as, edge blurry), and this bright border effect can cause signal chains saturated and the exact position at edge can be made to be difficult to be found.In addition, there is not the visual evidence of artefact charged on sample surfaces; If such artefact exists, can show as the voltage-contrast in image.

Be illustrated in Figure 80 by the horizon scan line of one of the surface characteristics of sample.The trunnion axis of line sweep illustrates pixel number, and the measured image of vertical axis instruction specific pixel.For comparison purposes, identical sample is imaged at (AMRAYmodel 1860) in Schottky Flied emission SEM, there is the beam energy of 3keV and the line of 30pA, with the enlargement ratio of 30,000X (visual field corresponding to about 13um).The image of gained is shown in Figure 81, and the horizon scan line by same characteristic features scanned in Figure 80 is shown in Figure 82.

Line sweep in Figure 82 shows significant bright border effect, and the signal chains on the limit of the surface characteristics be imaged is close to saturated.In the body of surface characteristics, SEM line sweep does not illustrate the strength level of relatively uniform stable state.But, the strength level in the body of feature everywhere or increase or reduce, except the little district of eigencenter.Finally, what the asymmetry of SEM line sweep indicated surface characteristics depends on that the charged of time appeared between the SEM light period.By comparison, the line sweep image of the feature recorded by the He ion and neutral atom detecting scattering shows the side effect be reduced significantly, and does not have obvious charged artefact.

Also the repetitive measurement of the special characteristic on the surface of sample can be carried out.If carry out the repetitive measurement of feature, the statistics of the size about measured feature may be obtained.Such as, the average and standard deviation of the position of the standard deviation of average feature width, characteristic width and/or the first limit of feature and/or Second Edge can be measured.Fourier method also may be used for the position on the limit analyzing one or more features, to determine the frequency spectrum of the space wavelength corresponding to edge shape.

19. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope is configured to expose 100 μm on the surface of the samples ²fOV is in He ion beam, and this He ion beam has 1pA line, the mean ion energy of 20keV, and 0.1% of FOV sample surfaces on bundle spot size.

In order to from sample measure crystalline information, He ion beam in discrete step by the FOV district of the scanned sample surfaces of grid.Two dimension detectors are used to absorb the He ion coming from the scattering of sample surfaces in each step.Each two dimensional image is corresponding to Kikuchi (Kikuchi) pattern of ad-hoc location on the surface of sample.According to Kikuchi pattern, the crystal structure of sample in this position, spacing of lattice and crystal orientation can be determined.Measure Kikuchi pattern by running through FOV in discrete step, obtain the complete figure of sample surfaces crystal structure.

In order to measure topographical information from sample, detector is configured to the overall strength measuring the secondary electron produced from sample in response to incident He ion beam.He ion beam is by the FOV district of the scanned whole sample surfaces of grid in discrete step, and the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.The contribution for secondary electron ionization meter that the change that measured crystalline information is used to the crystal structure removed in sample subsequently causes.The secondary electron total intensity value be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the intensity of the correction of the secondary electron of the position that He ion beam is corresponding on sample.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

20. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to from sample measure crystalline information, He ion beam in discrete step by the FOV district of the scanned sample surfaces of grid.Detector is used to measure the abundance as the He ion of the scattering of the function of the position of the He ion beam on sample surfaces.Measured total Abundances is used to the gray level image constructing sample, is wherein determined by the abundance of the overall measurement of the He ion of He ion beam location corresponding on sample the grey level of specific image pixel.The crystal grain of the different orientation of sample surfaces has the productive rate of the He ion of different scatterings, and the crystal grain of different orientation is shown as different grey levels by this image.Use the information in image, crystal grain and grain boundary can be identified at sample surfaces.

In order to measure topographical information from sample, total secondary electron intensity is measured as described in example 19.Measured crystalline information is used to remove the contribution for secondary electron ionization meter in sample caused by changes in crystal structure subsequently.The total secondary electron intensity level be corrected is used to construct the gray level image of sample, here the intensity that is corrected by the He ion beam location secondary electron of correspondence on sample of the grey level of specific image pixel and being determined.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

21. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to from sample measure crystalline information, He ion beam in discrete step by the FOV district of the scanned sample surfaces of grid.Detector is used to measure the abundance as the He ion of the scattering of the function of the position of the He ion beam on sample surfaces.The total Abundances measured is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the abundance of the overall measurement of the He ion of He ion beam location corresponding on sample.The crystal grain of the different orientation of sample surfaces has the productive rate of the He ion of different scatterings, and the crystal grain of different orientation is shown as different grey levels by this image.Use the information in image, crystal grain and grain boundary can be identified at sample surfaces.Once the grain boundary on sample surfaces is identified, then He ion beam is scanned from a crystal grain to another crystal grain on sample surfaces.In each position of He ion beam, two-dimensional detector is used to absorb the image of the He ion of the scattering coming from sample surfaces.Each two dimensional image corresponds to the Kikuchi pattern of the specific die of sample surfaces.According to Kikuchi pattern, the crystal structure of crystal grain, spacing of lattice and crystalline orientation can be determined.Measuring single Kikuchi pattern of each crystal grain instead of each pixel by running through FOV, in the shorter time, obtaining the complete figure of sample surfaces crystal structure.

In order to measure topographical information from sample, total secondary electron intensity is measured as described in example 19.Measured crystalline information is used to remove the contribution for secondary electron ionization meter in sample caused by changes in crystal structure subsequently.The total secondary electron intensity level be corrected is used to construct the gray level image of sample, wherein the intensity that is corrected by the He ion beam location secondary electron of correspondence on sample of the grey level of specific image pixel and being determined.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

22. from the pattern of sample surfaces and the measurement of crystalline information

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

As measured in the crystalline information from sample described in example 19.

In order to measure topographical information from sample, detector is configured to measure the overall strength in response to the He ion beam of incidence from the secondary electron of sample generation.Sample is tilted relative to He ion beam, makes He ion beam be incident to the surface of sample with non-perpendicular angle.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and the overall strength of secondary electron is measured as the function of He ion beam location on sample surfaces.Measured crystalline information is used to the contribution for secondary electron ionization meter caused by change of removing crystal structure in sample subsequently.The total intensity value be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the overall strength of the secondary electron be corrected of He ion beam location corresponding on sample.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.If can disclose He ion beam relative to He ion beam inclination sample is only incident on sample surfaces with vertical angle, keep hiding topographical information.

Optionally, sample inclination can be adjusted subsequently, makes He ion beam be incident to sample surfaces with different non-perpendicular angles, and He ion beam in discrete step by the whole FOV district of the scanned sample surfaces of grid.The overall strength of secondary electron is measured as the function of He ion beam location on sample surfaces, and measured crystalline information is used to the contribution for secondary electron ionization meter caused by change of removing crystal structure in sample subsequently.The total intensity value be corrected is used to the second gray level image of the sample constructing the second non-normal incidence angle corresponding to He ion beam, and wherein the grey level of specific image pixel is determined by the overall strength of the secondary electron be corrected of He ion beam location corresponding on sample.The information of two images measured from the incident angle at two different He ion beams can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces.

23. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 20 of the crystalline information of sample.

In order to measure topographical information from sample, from the overall strength of the secondary electron of sample as measured described in example 22.Measured crystalline information is for removing the contribution for secondary electron ionization meter caused by the incidence angle at each ion beam, the change by the crystal structure in sample.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.Two image informations measured from the incidence angle at different He ion beams can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces.

24. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 21 of the crystalline information of sample.

In order to measure topographical information from sample, from the overall strength of the secondary electron of sample as measured described in example 22.Measured crystalline information is for removing the contribution for secondary electron ionization meter caused by the incidence angle at each ion beam, the change by the crystal structure in sample.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.Two image informations measured from the incidence angle at different He ion beams can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces.

25. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 19 of the crystalline information of sample.

In order to measure topographical information from sample, the detector of 2 or more, eachly locates with different angular orientation relative to sample, is configured, to measure the overall strength of the secondary electron produced from sample in response to the He ion beam of incidence.He ion beam in discrete step by the whole FOV district of the scanned sample surfaces of grid, and the overall strength of secondary electron as He ion beam location on sample surfaces function and by each detector measurement.Measured crystalline information is used to the contribution of the secondary electron ionization meter for each detector caused by change removing crystal structure in sample subsequently.The total intensity value be corrected is used to the gray level image constructing series of samples, each image corresponds to one of detector, and the grey level of the specific image pixel wherein in specific image is determined by the overall strength of the secondary electron be corrected of He ion beam location corresponding on sample.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image measured by multiple detector.

26. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 20 of the crystalline information of sample.In order to measure the topographical information from sample, from the overall strength of the secondary electron of sample as measured described in example 25.Measured crystalline information is used to the contribution of the secondary electron ionization meter for each detector caused by change removing crystal structure in sample subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image measured by multiple detector.

27. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 21 of the crystalline information of sample.

In order to measure the topographical information from sample, from the overall strength of the secondary electron of sample as measured described in example 25.Measured crystalline information is used to the contribution of the secondary electron ionization meter for each detector caused by change removing crystal structure in sample subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image measured by multiple detector.

28. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 19 of the crystalline information of sample.

In order to measure the topographical information from sample, the detector being configured to measure He ion is located to detect with the He ion of large angle of scattering from sample surfaces scattering.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and total abundance of He ion is measured as the function of He ion beam location on sample surfaces by detector.Total Abundances is used to construct the gray level image of sample, wherein the grey level of specific image pixel determine by total measured abundance of the He ion of the scattering of He ion beam location corresponding on sample.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

29. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 20 of the crystalline information of sample.

From measured as described in example 28 of the topographical information of sample.

30. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 31 of the crystalline information of sample.

From measured as described in example 28 of the topographical information of sample.

31. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 19 of the crystalline information of sample.

In order to measure the topographical information from sample, the detector being configured to two of measurement He ion or more is located, to detect with the He ion of large angle of scattering from sample surfaces scattering.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and total abundance of He ion is measured as the function of He ion beam location on sample surfaces by detector.Total Abundances is used to construct the gray level image of sample corresponding to each detector, wherein the grey level of specific image pixel determine by the abundance of total measurement of the He ion of the scattering of He ion beam location corresponding on sample.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image measured by multiple detector.

32. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 20 of the crystalline information of sample.

From measured as described in example 31 of the topographical information of sample.

33. measure pattern and crystalline information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

From measured as described in example 21 of the crystalline information of sample.

From measured as described in example 31 of the topographical information of sample.

34. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information from sample, the detector being configured to measure He ion is located, to detect the He ion being reversed scattering from sample.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and the total abundance being reversed the He ion of scattering is measured as the function of He ion beam location on sample surfaces.The measurement being reversed total abundance of the He ion of scattering is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the abundance being reversed the overall measurement of the He ion of scattering of He ion beam location corresponding on sample.Because the scattering section of He ion depend on roughly the atomic number of scattering atom square, so the intensity in image may be used for the composition determining sample quantitatively.

In order to measure topographical information from sample, as described in example 19, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.Measured material information is used to the contribution for total secondary electron intensity caused by composition change of removing in sample subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the total intensity value be corrected.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

35. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 34.

In order to measure topographical information from sample, as described in example 22, the overall strength from the secondary electron of sample is measured.Measured material information be used to remove each Ion beam incident angles, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.The information of two images measured from the incidence angle at different He ion beams can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces.

36. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 34.

In order to measure topographical information from sample, as described in example 25, the overall strength from the secondary electron of sample is measured.Measured material information be used to remove each Ion beam incident angles, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.From can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces by the information of the image of multiple detector measurement.

37. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 34.

Topographical information can be measured from sample, as described in example 28.

38. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 34.

Topographical information can be measured from sample, as described in example 31.

39. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information from sample, the energy and the angle parsing detector that are configured to measurement He ion are located, to detect the He from sample.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and the He ion energy of scattering and angle are measured as the function of He ion beam location on sample surfaces.From average angle and the energy of the He ion of scattering, the quality of scattering atom can be determined, and the composition of sample can be determined.

In order to measure topographical information from sample, as described in example 19, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.Measured material information is used to the contribution for total secondary electron intensity caused by composition change of removing in sample subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the total intensity value be corrected.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

40. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 39.

In order to measure topographical information from sample, as described in example 22, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.Measured material information be used to remove each Ion beam incident angles, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in fig. 22.The information of two images measured from the incidence angle of different He ion beams can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces.

41. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 39.

In order to measure topographical information from sample, as described in example 25, the overall strength from the secondary electron of sample is measured.Measured material information be used to remove each Ion beam incident angles, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in fig. 25.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image measured by multiple detector.

42. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 39.

Topographical information can be measured from sample, as described in example 28.

43. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 39.

Topographical information can be measured from sample, as described in example 31.

44. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information, x-ray detector can be used to the x-ray of He ion beam from electromagnetic radiation of probe response incidence.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and x-ray emission spectra is measured as the function of the position of He ion beam on sample surfaces.Some line of departure in X-ray spectrum is distinctive for the atom of some type, and thus according to measured x-ray spectrum, the composition on each step sample surfaces is determined.

In order to measure topographical information from sample, as described in example 19, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.Measured material information is used to remove the contribution for total secondary electron ionization meter caused by composition in sample changes subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the total intensity value be corrected.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

45. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 44.

In order to measure topographical information from sample, the total secondary electron intensity from sample is measured, as described in example 22.Measured material information be used to remove each Ion beam incident angles, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of two images of different He ion beam incidence angular measurements.

46. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as shown in example 44.

In order to measure topographical information from sample, the total secondary electron intensity from sample is measured, as described in example 25.Measured material information be used to remove each detector, by sample composition change caused by the contribution for secondary electron intensity.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image of multiple detector measurement.

47. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as shown in example 44.

Topographical information can be measured from sample, as shown in example 28.

48. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as shown in example 44.

Topographical information can be measured from sample, as shown in example 31.

49. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information, photon detector can be used to the photon that probe response sends in the He ion beam of incidence from sample.He ion beam is by the whole FOV district of the scanned sample surfaces of grid in discrete step, and photon emission spectrum is measured as the function of the position of He ion beam on sample surfaces.Some line of departure in frequency spectrum is distinctive for the atom of some type, and therefore according to measured frequency spectrum, the composition on each step sample surfaces is determined.

In order to measure topographical information from sample, as described in example 19, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces.Measured material information is used to remove the contribution for total secondary electron ionization meter caused by composition in sample changes subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the total intensity value be corrected.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

50. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

In order to measure topographical information from sample, from total secondary electron intensity of sample as measured described in example 22.Measured material information be used to remove each Ion beam incident angles, by sample in composition change caused by the contribution for secondary electron ionization meter.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.Can be combined subsequently and be used to the three-dimensional appearance information quantitatively determining sample surfaces from the information of two images of different He ion beam incidence angular measurements.

51. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

In order to measure topographical information from sample, from total secondary electron intensity of sample as measured described in example 25.Measured material information be used to remove each detector, by sample in composition change caused by the contribution for secondary electron ionization meter.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.Can be combined subsequently and be used to the three-dimensional appearance information quantitatively determining sample surfaces from the information of the image of multiple detector measurement.

52. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

Topographical information can be measured from sample, as described in example 28.

53. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

Topographical information can be measured from sample, as described in example 31.

54. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information, the auger electrons that the He ion beam that auger electrons detector can be used to probe response incidence sends from sample.He ion beam is scanned the whole FOV district of sample surfaces in discrete step, and auger electrons emission spectra is measured as the function of the position of He ion beam on sample surfaces.Some line of departure in frequency spectrum is distinctive for the atom of some type, and thus according to measured frequency spectrum, the composition on each step sample surfaces is determined.

In order to measure topographical information from sample, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces, as described in example 19.Measured material information is used to remove the contribution for total secondary electron ionization meter caused by the change of composition in sample subsequently.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, and wherein the grey level of specific image pixel is determined by the total intensity value revised.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

55. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

In order to measure topographical information from sample, the overall strength from the secondary electron of sample can be measured, as described in example 22.Measured material information be used to remove each Ion beam incident angles, by sample in the contribution for secondary electron ionization meter caused by ingredient change.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 22.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of two images of different He ion beam incidence angular measurements.

56. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

In order to measure topographical information from sample, the overall strength from the secondary electron of sample can be measured, as described in example 25.Measured material information be used to remove each detector, by sample in the contribution for secondary electron ionization meter caused by ingredient change.The total secondary electron intensity level be corrected is used to the gray level image constructing sample, as described in example 25.Can combined subsequently and three-dimensional appearance information for quantitatively determining sample surfaces from the information of the image of multiple detector measurement.

57. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

Topographical information can be measured from sample, as described in example 28.

58. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

Topographical information can be measured from sample, as described in example 31.

59. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

In order to measure material information, TOF detector can be used to probe response in the He ion beam of incidence from the secondary ion of electromagnetic radiation and/or atom.He ion beam in discrete step by the FOV district of the scanned whole sample surfaces of grid, and from the secondary ion of sample 180 and/or the flight time of atom measured as the function of the position of He ion beam on sample surfaces.According to the measured flight time of measured ions/atoms, and the known voltage of accelerating electrode in TOF instrument, the quality of the particle be detected can be calculated and can be determined the identity of particle.

In order to measure topographical information from sample, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces, as described in example 19.Measured material information is used to remove the contribution for total secondary electron ionization meter caused by the change of composition in sample in sample subsequently.The secondary electron total intensity value be corrected is used to the gray level image constructing sample, and wherein the grey level of specific pixel is determined by the total intensity value be corrected.Topographical information is provided by described image, and described image shows the surface undulation pattern of sample in FOV.

60. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

In order to measure topographical information from sample, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces, as described in example 22.Measured material information is used to remove the incidence angle at each ion beam in sample subsequently, by sample in the contribution for secondary electron ionization meter caused by change of composition.The secondary electron total intensity value be corrected is used to the gray level image constructing sample, as described in example 22.Can be combined subsequently and be used to the three-dimensional appearance information quantitatively determining sample surfaces from the information of two images of different He ion beam incidence angular measurements.

61. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

In order to measure topographical information from sample, the overall strength of secondary electron is measured as the function of the position of He ion beam on sample surfaces, as described in example 25.Measured material information be used to subsequently to remove in sample each detector, by sample in composition change caused by the contribution for secondary electron ionization meter.The secondary electron total intensity value be corrected is used to the gray level image constructing sample, as described in example 25.Can be combined subsequently and be used to the three-dimensional appearance information quantitatively determining sample surfaces from the information of the image of multiple detector measurement.

62. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

Topographical information can be measured from sample, as described in example 28.

63. measure pattern and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

Topographical information can be measured from sample, as described in example 31.

64. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 44.

Crystalline information can be measured from sample, as described in example 19.

65. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 44.

Crystalline information can be measured from sample, as described in example 20.

66. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 44.

Crystalline information can be measured from sample, as described in example 21.

67. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

Crystalline information can be measured from sample, as described in example 19.

68. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

Crystalline information can be measured from sample, as described in example 20.

69. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 49.

Crystalline information can be measured from sample, as described in example 21.

70. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

Crystalline information can be measured from sample, as described in example 19.

71. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

Crystalline information can be measured from sample, as described in example 20.

72. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 54.

Crystalline information can be measured from sample, as described in example 21.

73. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

Crystalline information can be measured from sample, as described in example 19.

74. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

Crystalline information can be measured from sample, as described in example 20.

75. measure crystallization and material information from sample

In order to measure pattern and crystalline information from sample, sample is fixed on the appropriate location on sample holder in gas field ion microscope as described herein.Gas field ion microscope as being configured described in example 19.

Material information can be measured from sample, as described in example 59.

Crystalline information can be measured from sample, as described in example 21.

Other embodiment is in claim.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of ion microscope system.

Fig. 2 is the schematic diagram in gas field ion source.

Fig. 3 is the illustrative diagram of the enlarged side view of the embodiment of tip.

Fig. 4 is the illustrative diagram of the enlarged side view at the tip of Fig. 3.

Fig. 5 is the schematic diagram of helium ion microscope system.

Fig. 6 is the illustrative diagram of the amplification plan view of the embodiment at W (111) tip.

Fig. 7 is the illustrative diagram of the enlarged side view at W (111) tip of Fig. 6.

Fig. 8 is the end view at the tip that cone angle measuring is shown.

Fig. 9 is the end view at the tip that radius of curvature measurement is shown.

Figure 10 is the flow chart that the embodiment manufacturing most advanced and sophisticated method is shown.

Figure 11 A is the perspective view of the embodiment of most advanced and sophisticated supporting component.

Figure 11 B is the upward view of the supporting component of Figure 11 A.

Figure 12 is the end view of the embodiment comprising the supporting component supporting most advanced and sophisticated Vogel seat.

Figure 13 is the schematic diagram of the embodiment of gas field ion source and ion optics.

Figure 14 is the schematic diagram of the embodiment of ion-optic system.

Figure 15 is the vertical view of the embodiment in the aperture of many openings.

Figure 16 is the vertical view of the embodiment in the aperture of many openings.

Figure 17 is the sectional view of the embodiment of the travel mechanism at gas field ion microscope tip.

Figure 18 is the schematic diagram of Everhart-Thornley detector.

Figure 19 is the sectional view of the part of the gas field ion microscope system comprising micro-channel plate detector.

Figure 20 A and 20B is end view and the vertical view of the Jin Dao supported by carbon surface.

Figure 20 C is the sample for Figure 20 A and 20B, and total abundance of the secondary electron of average measurement is as the figure of ion beam location function.

Figure 21 is the schematic diagram of the part of the gas field ion microscope comprising air-delivery system.

Figure 22 is the schematic diagram of the part of the gas field ion microscope comprising flood gun.

Figure 23 is the schematic diagram of the sample comprising the lower charge layer in surface.

Figure 24 is the schematic diagram of the collector electrode for reducing the surface charge on sample.

Figure 25 is the schematic diagram of the flood gun equipment of the surface charge reduced on sample.

The schematic diagram of flood gun equipment that Figure 26 is the surface charge reduced on sample, that comprise change-over panel.

Figure 27 A is the illustrative diagram of the sample with the positive charge layer be arranged on wherein.

Figure 27 B has the illustrative diagram arranged with the sample of positive and negative charged layer wherein.

Figure 28 is the schematic diagram of the embodiment of vibration uncoupling sample manipulator.

Figure 29 is the schematic diagram of the embodiment of vibration uncoupling sample manipulator.

Figure 30 is the schematic diagram of the embodiment of vibration uncoupling sample manipulator.

Figure 31 is the schematic diagram of the electrostatic filtration system for separating of the ion in the particle beams and neutral atom.

Figure 32 is the schematic diagram of the electrostatic filtration system for separating of the neutral atom in the particle beams, single charged ion and double-electric ion.

Figure 33 is a kind of schematic diagram of filtration system, described filtration system comprise for separating of the electricity of the neutral atom in the particle beams, single charged ion and double-electric ion and magnetic field without disperse sequence.

Figure 34 A is the schematic diagram of the embodiment of the helium ion scattering pattern illustrated from surface.

Figure 34 B is the figure of the relative abundance that the helium ion be scattered detected with detector is in figure 34 a shown.

Figure 35 A, 35D and 35G be illustrate use different detectors detect the helium ion be scattered, from the schematic diagram of the corresponding embodiment of the helium ion scattering pattern on surface.

Figure 35 B, 35E and 35H are the figure of the helium ion yield be always scattered for the system shown in Figure 35 A, 35D and G respectively.

Figure 35 C, 35F and 35I are the figure of the relative abundance of the helium ion be scattered that the detector be used in Figure 35 A, 35D and 35G detects respectively.

Figure 36 is the schematic diagram of the part of the gas field ion microscope of the layout that the detector comprised for measuring the scattered ion(s) from sample is shown.

Figure 37 A-37D is the scanning electron microscope image of conductive tip.

Figure 38 is the digitized representations on the surface of conductive tip.

Figure 39 is the gradient figure of the gradient on surface shown in Figure 38.

Figure 40 is the field ion microscope image of the conductive tip of the tripolymer (trimer) had on its summit as end layer.

Figure 41 is the scanning field ion microscope image on its summit with the trimerical conductive tip as end layer.

Figure 42 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 43 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 44 is the scanning field ion microscope image of conductive tip.

Figure 45 is the field ion microscope image on its summit with the trimerical conductive tip as end layer.

Figure 46 is the scanning electron microscope image of conductive tip.

Figure 47 is the field ion microscope image of conductive tip.

Figure 48 is the field ion microscope image of conductive tip.

Figure 49 is the field ion microscope image of conductive tip.

Figure 50 is the scanning field ion microscope image on its summit with the trimerical conductive tip as end layer.

Figure 51 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 52 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 53 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 54 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 55 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 56 is the illustrative diagram of most advanced and sophisticated support.

Figure 57 is the illustrative diagram of most advanced and sophisticated support.

Figure 58 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 59 A is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 59 B is the image of the sample with scanning electron microscopy acquisition.

Figure 60 is the curve chart of the secondary electron stream from sample.

Figure 61 A is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 61 B is the image obtaining sample by scanning electron microscopy.

Figure 62 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 63 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 64 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 65 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 66 is the embodiment of the configuration being configured to the detector detecting secondary electron.

Figure 67 A is the curve chart of the secondary electron density with sample position change according to the image in Figure 59 A.

Figure 67 B is the curve chart of the secondary electron density with sample position change according to the image in Figure 59 B.

Figure 68 is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 69 A-69C is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 70 A is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 70 B is the polar diagram leaving the helium ion of sample and the mil(unit of angular measure) of helium atom of the image illustrated for Figure 70 A.

Figure 71 A is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 71 B is the polar diagram leaving the helium ion of sample and the mil(unit of angular measure) of helium atom of the image illustrated for Figure 71 A.

Figure 72 is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 73 is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 74 is the image of the sample with the helium ion microscope acquisition being configured to detection of photons.

Figure 75 is the image of the sample with the helium ion microscope acquisition being configured to detect secondary electron.

Figure 76 is the expander graphs of the parts of images of Figure 75.

Figure 77 is the figure of image density as the function of the location of pixels of the line sweep for the image by Figure 76.

Figure 78 be numerical value convergent-divergent and smooth operation after the figure of data shown in Figure 77.

Figure 79 is the image of the sample with the helium ion microscope acquisition being configured to detect helium ion and neutral He atom.

Figure 80 is the figure of image density as the function of the location of pixels of the line sweep of the parts of images by Figure 79.

Figure 81 is the image of the sample with scanning electron microscopy acquisition.

Figure 82 is the figure of image density as the function of the location of pixels of the line sweep of the parts of images by Figure 81.

Reference number similar in the various figures indicates similar element.

Claims (20)

1. irradiate a method for sample with the ion beam system with ion optics, comprising:

Produce by gas and gas field ion source being interacted and comprise first of ion and restraint, described first bundle comprises neutral particle and single charged ion;

Described neutral particle is removed so that formation comprises electro-ionic second bundle of described single lotus from described first bundle;

By described second bundle by deflecting electrode, described deflecting electrode is biased from the longitudinal axis of described ion optics, and

Described second bundle is interacted, to cause particle to leave described sample with described sample.

2. method according to claim 1, wherein said particle is selected from the group be made up of the ion of secondary electron, auger electrons, secondary ion, secondary neutral particle, neutral particle, scattering and photon.

3. method according to claim 1, wherein said first bundle also comprises double-electric ion.

4. method according to claim 1, wherein removes described neutral particle from described first bundle and comprises the electro-ionic beam path of the described single lotus of change.

5. method according to claim 4, the electro-ionic beam path of wherein said single lotus use electric field, magnetic field or both and be changed.

6. method according to claim 5, wherein removes described neutral particle from described first bundle and comprises described first bundle by additional deflecting electrode.

7. method according to claim 1, wherein said gas field ion source comprises:

Conductive tip, has the end layer comprising 3 to 20 atoms;

Ion optics, configuration makes a part of ion in described ion beam by described ion optics before the described sample of arrival, and described ion optics comprises:

Electrode; With

Aperture, is configured to avoid some ions in described ion beam to arrive the surface of described sample.

8. method according to claim 1, wherein said gas field ion source comprises the conductive tip had from the average cone direction of 23 ° to 45 °.

9. method according to claim 1, also comprises, and after described second bundle of formation, intercept described neutral particle with gatherer, described gatherer is arranged along the axle between described gas field ion source and described sample.

10. there is an ion beam system for ion optics, comprising:

Gas field ion source, interact to produce the bundle comprising chemical species with gas, this chemical species comprises charged nucleic and neutral chemical species; And

Ion column, is made up of following deflecting electrode:

First deflecting electrode, is configured to be separated according to the charged beam path of described intrafascicular chemical species that causes of described chemical species, produces the first bundle comprising described charged nucleic and the second bundle comprising described neutral chemical species thus;

Second deflecting electrode, be configured to described first bundle by described second deflecting electrode, and described second bundle does not interact with described second deflecting electrode; And

3rd deflecting electrode, be configured to described first bundle by described 3rd deflecting electrode, and described second bundle does not interact with described 3rd deflecting electrode,

Wherein said ion column is curved ion bundle.

11. systems according to claim 10, wherein said ion beam has 1 × 10 ^-16cm ²the etendue of the reduction of more than srV.

12. systems according to claim 10, wherein said ion beam has 5 × 10 ^-21cm ²the etendue of sr or less.

13. systems according to claim 10, wherein said ion beam has 5 × 10 on the surface of sample ⁸a/m ²the brightness of the reduction of more than srV.

14. systems according to claim 10, wherein said ion beam has 1 × 10 on the surface of sample ⁹a/cm ²the brightness of sr or larger.

15. systems according to claim 10, wherein said ion beam has the spot size of the size of 10nm or less on the surface of sample.

16. systems according to claim 10, wherein said ion beam has the ion beam current of 1nA or less on the surface of sample.

17. systems according to claim 16, the ion beam current wherein on the surface of described sample is 0.1fA or less.

18. systems according to claim 10, wherein said ion beam has the energy dissipation of 5eV or less on the surface of sample.

19. systems according to claim 10, wherein said gas field ion source comprises:

Conductive tip, has the end layer comprising 3 to 20 atoms;

Ion optics, configuration makes a part of ion in described ion beam by described ion optics before arrival sample, and described ion optics comprises:

Electrode; With

Aperture, is configured to avoid some ions in described ion beam to arrive the surface of described sample.

20. systems according to claim 10, wherein said gas field ion source comprises the conductive tip had from the average cone direction of 23 ° to 45 °.