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CN101350381B - 凸点发光二极管及其制造方法 - Google Patents

凸点发光二极管及其制造方法 Download PDF

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CN101350381B
CN101350381B CN2007100292194A CN200710029219A CN101350381B CN 101350381 B CN101350381 B CN 101350381B CN 2007100292194 A CN2007100292194 A CN 2007100292194A CN 200710029219 A CN200710029219 A CN 200710029219A CN 101350381 B CN101350381 B CN 101350381B
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electrode
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CN101350381A (zh
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罗珮璁
姜志荣
陈海英
肖国伟
陈正豪
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Guangdong APT Electronics Ltd
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Abstract

本发明凸点发光二极管，凸点发光二极管芯片的电极上镀制凸点下金属，凸点下金属上部生长金属凸点；发光二极管芯片上方除电极以外的表面生长有钝化层；封装支架上制作有焊垫；凸点发光二极管的金属凸点倒装焊接在封装支架的焊垫上。其制作方法，包括以下步骤：制作钝化层，溅镀金属牺牲层，制作光刻胶掩膜，形成金属凸点，去除光刻胶掩膜，去除金属牺牲层，减薄、切分成为独立的芯片，并倒装焊于SMD支架上，形成倒装焊LED模组。本发明使发光二极管的芯片不须金线键合及固晶工艺，直接接通电路并组装在基板或金属支架上，实现封装小型化，多芯片模组及成功解决发光二极管的散热问题。

Description

凸点发光二极管及其制造方法
技术领域
本发明涉及发光二极管及其封装制造方法领域，特别是一种凸点发光二极管及其制造方法。
背景技术
现有的传统氮化镓基(GaN)发光二极管的结构，如图1所示，是在蓝宝石(sapphire)基底1上，形成包括发光层2的多层氮化镓外延晶体所制成。在的N型区域3晶体层及P型区域4晶体层上，分别形成金属电极：P电极5与N电极6。现有的发光二极管LED常用的组装方法，是将LED芯片用界面导热材料7(TIM)固定在封装支架8内，通过金线键合9(Wire Bonding)连接LED器件的金属电极与器件的封装支架8。其中，LED芯片的金属电极面向上，利用固晶工艺放置固定在封装支架8上，当金线键合(Wire Bonding)完成后，使用高透明的树脂将LED芯片包封起来，以保护发光器件和封装结构。
随着市场对发光二极管LED性能要求的不断提高，应用范围的不断扩大，上述的传统LED在制造和封装上存在的许多缺陷就成为限制LED应用的瓶颈。最大的两个缺陷分别是芯片的传热问题和多芯片组装的复杂性。
市场对大功率的LED芯片需求越来越大，随着LED芯片的功率增大，传统LED芯片的传热问题就越突出，原因为芯片的传热受到界面导热材料的导热能力的限制，造成散热的瓶颈。此外，利用多芯片LED组装制造的大功率、多色彩的LED模组，其应用范围也越来越广。由于传统LED芯片需要引线连接，引线占据了额外的空间，导致封装体积过大，不利于后续产品小型化的开发。并且此种芯片不利于与控制芯片集成与组装，对于需要多种色彩LED芯片组装的产品，传统LED芯片的制造与封装形式限制了多芯片LED产品的应用。
发明内容
本发明的目的是针对以上所述目前发光二级管存在的不足，提供一种凸点发光二极管及其制造方法，以解决芯片的传热问题，简化封装制作工艺过程，实现不同尺寸、不同色彩的LED芯片的小型化封装，以及放宽对基板或支架的制造精度要求。
一种凸点发光二极管，包括封装支架和凸点发光二极管芯片，凸点发光二极管芯片包括基底、晶体层、发光层、P电极和N电极，在基底上形成N型区域和P型区域晶体层，N型区域和P型区域之间为发光层，在N型区域和P型区域晶体层分别形成N电极和P电极，电极上设置凸点下金属，凸点下金属上部制造金属凸点；发光二极管芯片上方除电极以外的表面覆盖有钝化层；封装支架内设有用于焊接对应的凸点发光二极管的焊垫；凸点发光二极管芯片通过金属凸点倒装焊接在封装支架的焊垫上。
所述的电极材料可以为铝、硅、钛、钨、铜、镍、金、银、铟、锡等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
所述钝化层(Passivation)材料可以使用氧化硅、氮化硅、氮氧化硅等无机材料或者聚亚酰胺(Polyimide)等其他有机材料所制成。
所述的凸点下金属(Under Bump Metal，UBM)可以为钛、钨、铜、铬、金、银、镍、钒、铂、钯、铟、锡等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
所述的金属凸点可以为金、铅、锡、铜、银、铟、铟等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
所述的发光二极管芯片的厚度d小于200微米(um)。
所述的金属凸点高度大于1微米(um)。
一种凸点发光二极管的制作方法，包括以下制作步骤：
1.在LED芯片上通过钝化工艺形成钝化层；
2.溅镀金属牺牲层材料形成金属牺牲层；
3.制作掩膜；
4.制作凸点下金属(UBM)材料后填充金属凸点(Metal Bump/Stud)材料，形成金属凸点；
5.去除掩膜；
6.去除金属牺牲层；
7.减薄、切分成为一个个独立的芯片，并倒装焊于封装支架上；
8.形成倒装焊LED模组
所述的制作凸点下金属和/或制作金属凸点可使用印刷、电镀、化学镀、金属蒸镀或金属溅镀等工艺完成。
所述的金属牺牲层是钛、钨、铜、铬、金、银、镍、钒、铂、钯、铟、锡中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
所述的掩膜使用的光刻技术通过包括涂布、喷涂、印刷、烘烤、曝光、显影刻蚀等工艺来形成。
本发明描述的凸点发光二极管芯片以金属为散热通道，解决了LED芯片的集中散热问题。应用倒装焊结合凸点技术将芯片翻转，通过芯片上制成的金属凸点(Metal Bump/Stud)，与制备有焊垫的基板或支架直接形成电路连接，从而省略了固晶、金线键合的工艺过程，减小了封装尺寸，满足了电子产品的高性能、小型化的要求；实现了不同尺寸、不同色彩的LED芯片的多芯片模组的小型化封装，同时放宽了对基板或支架的加工精度的要求。
附图说明
图1为传统氮化镓发光二极管的结构示意图；
图2为本发明凸点发光二极管的结构示意图；
图3为本发明凸点发光二极管的凸点发光二极管的芯片的结构示意图；
图4为本发明凸点发光二极管的金属凸点制作工艺示意图；
图5为本发明凸点发光二极管实施方案1的制作工艺示意图；
图6为本发明凸点发光二极管实施方案2的制作工艺示意图。
具体实施方式
以下结合附图和具体实施例对本发明进行详细的说明。
一种凸点发光二极管，如图2所示，包括封装支架8和凸点发光二极管芯片。凸点发光二极管芯片，如图3所示，包括基底1、晶体层、发光层2、P电极5、N电极6，在基底1上形成N型区域3和P型区域4晶体层，N型区域3和P型区域4之间为发光层2，晶体层的N型区域3和P型区域4分别形成P电极5和N电极6，P电极5和N电极6上分别制造有凸点下金属(Under BumpMetal，UBM)13，凸点下金属(Under Bump Metal，UBM)13上填充了金属凸点(Metal Bump/Stud)14；发光二极管芯片上方除电极以外的表面覆盖钝化层(Passivation)12；封装支架8上设置有焊垫11；凸点发光二极管芯片管通过金属凸点14直接倒装焊接在封装支架8的焊垫11上，最后使用高透明的树脂将LED芯片包封起来，以保护发光器件和封装结构。基底1可以是蓝宝石基底。P电极5和N电极6的电极材料可以使用铝、硅、钛、钨、铜、镍、金、银、铟、锡等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。钝化层(Passivation)12可以使用氧化硅、氮化硅、氮氧化硅等无机材料或者聚亚酰胺(Polyimide)等或其他有机材料所制成，钝化层12开口尺寸可以小于、等于或大于电极尺寸，视具体的制作情况而定。凸点下金属(Under BumpMetal，UBM)13可以使用钛、钨、铜、铬、金、银、镍、钒、铂、钯、铟、锡等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。金属凸点(Metal Bump/Stud)14可以使用金、铅、锡、铜、银、铟、铟等其中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。金属凸点14高度大于1um。发光二极管芯片的厚度d应小于200微米(um)。
金属凸点发光二极管的制作方法，如图4所示，首先在芯片表面形成金属牺牲层15，其后在电极上方以外的表面形成光刻胶掩膜16、使电极上方曝露在外，并填充凸点下金属UBM材料13及凸点金属材料14。在去除光刻胶掩膜16及金属牺牲层15后，若凸点材料为共晶合金，则加一道回流工艺(Reflow)形成金属凸点，若凸点材料不是共晶合金，则不需要回流工艺。
实施例1
针对本发明所采用的技术、方法和设计结合图5进行说明，所使用附图非按照比例绘制。为简单起见，只用一个LED芯片作为说明，本实施方案可以采用不同尺寸、不同波长的LED芯片。金凸点发光二极管芯片制造步骤如下：
1、在发光二极管芯片上形成钝化层，如图5中5—1所示；
2、溅镀钛/金为金属牺牲层材料形成金属牺牲层15，如图5中5—2所示
3、制作掩膜16，如图5中5—3所示；
4、制作金为凸点下金属(UBM)材料及填充金属凸点(Metal Bump/Stud)材料14，形成金金属凸点，如图5中5—4所示；
5、去掩膜16，如图5中5—5所示；
6、去除金属牺牲层，如图5中5—6所示；
7、完成减薄工艺后，切分使之成为一个个独立的芯片，并倒装焊于封装支架8上，如图5中5—7所示；
8、完成倒装焊LED模组，如图5中5—8所示。
本实施例利用倒装焊工艺，可将凸点LED芯片焊接在封装支架8上，如此可制备成高密度，小型化的倒装焊LED模组。
实施方案2
针对本发明所采用的技术、方法和设计结合附图6进行说明。所使用附图非按照比例绘制。为简单起见，只用一个LED芯片作为说明，本实施方案可以采用不同尺寸、不同波长的LED芯片。铅锡合金凸点发光二极管芯片制造步骤如下：
1、在发光二极管芯片上形成钝化层，如图6中6—1所示；
2、溅度钛/钨/铜合金为金属牺牲层材料形成金属牺牲层15，如图6中6—2所示；
3、制作光刻胶掩膜16，如图6中6—3所示；
4、电镀铜为凸点下金属13(UBM)材料及电镀铅锡合金为金属凸点14(MetalBump/Stud)材料，形成铅锡合金金属凸点14，如图6中6—4所示。
5、去除光刻胶掩膜16，如图6中6—5所示；
6、去除金属牺牲层15，如图6中6—6所示；
7、铅锡合金回流成球17，如图6中6—7所示；
8、完成减薄工艺后，切分使之成为一个个独立的芯片，并倒装焊于封装支架8上，如图6中6—8所示；
本实施例利用倒装焊工艺，将铅锡合金回流成球17后，可将凸点LED芯片焊接在SMD支架8上，如此可制备成高密度，小型化的倒装焊LED模组。
以上的凸点发光二极管的制作工艺，不仅适用于单个LED芯片的情形，同样非常适合多个LED模组的情形。掩膜16的厚度应该大于5微米(um)。封装支架8最好为SMD支架。凸点下金属(UBM)13可使用印刷、电镀、化学镀、金属蒸镀或金属溅镀等工艺填充而成；金属凸点14(Metal Bump/Stud)可使用印刷、电镀、化学镀、金属蒸镀或金属溅镀等工艺填充而成；金属牺牲层同样可以使用上述方法制作。
以上所述仅为本发明的实施举例，并非限定本发明实施范围。凡按照本发明权利要求保护范围所作的相似变化和修饰，均为本发明内容所涵盖。

Claims (9)

1.一种凸点发光二极管，包括封装支架和凸点发光二极管芯片，其特征在于：凸点发光二极管芯片包括基底、晶体层、发光层、P电极和N电极，还包括一金属牺牲层，在基底上形成N型区域和P型区域晶体层，N型区域和P型区域之间为发光层，在晶体层的N型区域和P型区域分别形成P电极和N电极，P电极和N电极上填充凸点下金属，凸点下金属上部制造有金属凸点，金属牺牲层分别设置在P电极与凸点下金属之间以及N电极与凸点下金属之间；
发光二极管芯片上方除电极以外的表面覆盖有钝化层；
封装支架内设有用于焊接对应的凸点发光二极管的焊垫；
凸点发光二极管芯片通过金属凸点倒装焊接在封装支架的焊垫上；
所述发光二极管芯片的厚度小于200um，金属凸点高度大于1um。
2.如权利要求1所述的凸点发光二极管，其特征在于：所述的电极材料是铝、硅、钛、钨、铜、镍、金、银、铟、锡中的一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
3.如权利要求1所述的凸点发光二极管，其特征在于：所述钝化层使用氧化硅、氮化硅、氮氧化硅或者聚亚酰胺所制成。
4.如权利要求1所述的凸点发光二极管，其特征在于：所述的凸点下金属是钛、钨、铜、铬、金、银、镍、钒、铂、钯、铟、锡中的一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
5.如权利要求1所述的凸点发光二极管，其特征在于：所述的金属凸点是金、铅、锡、铜、银、铟、铟中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
6.一种凸点发光二极管的制作方法，其特征在于：包括以下步骤：
1、在发光二极管芯片上形成钝化层；
2、溅镀金属牺牲层；
3、制作光刻胶掩膜；
4、制作凸点下金属材料后填充金属凸点材料，形成金属凸点；
5、去除光刻胶掩膜；
6、去除金属牺牲层；
7、减薄、切分成为一个个独立的芯片，并倒装焊于封装支架上；
8、形成倒装焊LED模组。
7.如权利要求7所述的凸点发光二极管的制作方法，其特征在于：所述的凸点下金属、填充金属凸点和/或金属牺牲层是使用印刷、电镀、化学镀、金属蒸镀或金属溅镀工艺完成。
8.如权利要求7所述的凸点发光二极管的制作方法，其特征在于：所述的金属牺牲层是钛、钨、铜、铬、金、银、镍、钒、铂、钯、铟、锡中一种金属材料，或者其中多种金属材料形成的多层膜或者合金。
9.如权利要求7所述的凸点发光二极管的制作方法，其特征在于：所述的掩膜使用的光刻技术通过包括涂敷、喷涂、印刷、烘烤、曝光、显影刻蚀工艺来形成。
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