CN101276673B - Coil component - Google Patents
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- CN101276673B CN101276673B CN2008100097105A CN200810009710A CN101276673B CN 101276673 B CN101276673 B CN 101276673B CN 2008100097105 A CN2008100097105 A CN 2008100097105A CN 200810009710 A CN200810009710 A CN 200810009710A CN 101276673 B CN101276673 B CN 101276673B
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Abstract
The invention relates to a coil element, which aims at providing a coil element with high impedance and fine high frequency characteristic. A common mode filter (1) is provided with: helical coil conductors (33, 35); an insulating barrier (7) embedding in the coil conductors (33, 35); an opening portion (42) opens at the insulating barrier (7) at the internal surroundings of the coil conductors (33, 35); a lateral wall magnetic film (47) formed just on the lateral wall of the opening portion (42). The common mode filter 1 is further provided with a magnetic film (41) formed by embedding in the opening portion (42), and the magnetic inductivity of the lateral wall magnetic film (47) is higher than that of the magnetic film (41).
Description
Technical field
The present invention relates to coil part.
Background technology
The coil part of installing in the internal circuit as the electronic equipment of PC or portable telephone etc., well-known have: twine the cascade type that forms coil-conductor pattern and range upon range of this magnetic sheet on the magnetic sheet surface of winding-type, ferrite etc. of copper cash and form on the FERRITE CORE or adopt film to form the film-type that technology interactive forms the coil-conductor of dielectric film and metallic film.In recent years, the miniaturization and the high performance of electronic equipment develop rapidly, the miniaturization and the high performance of coil part are expressed strong hope thereupon.In the coil part of film-type,, the coil part of the chip size below the 1mm is provided to market through with the coil-conductor filmization.In the coil part of film-type, often with the insulating barrier opening of all sides in the coil-conductor and form peristome, this peristome of landfill and form magnetic core (magnetosphere).Magnetic core forms for forming closed magnetic circuit.Magnetic core for example mixes magnetic and forms in resin.
As more than the frequency 500MHz, the coil part of the high-frequency applications of GHz frequency band particularly, require to have high impedance and good high frequency characteristics.In order to obtain high impedance and good high frequency characteristics, consider to adopt to reduce magnetic particle diameter that magnetic core comprises or the methods such as permeability that improve magnetic core.But, the magnetic particle diameter reduce and the raising of the permeability of magnetic core is limited.Therefore, traditional coil part is difficult to obtain high impedance and good high frequency characteristics.
No. 3807438 communique of [patent documentation 1] special permission
[patent documentation 2] spy opens flat 9-223636 communique
[patent documentation 3] spy opens flat 7-335440 communique
Summary of the invention
The object of the present invention is to provide the coil part that can obtain high impedance and excellent in high-frequency characteristics.
The coil part that achieves the above object is characterised in that, is provided with: the coil-conductor that helical form forms; Imbedded the insulating barrier of above-mentioned coil-conductor; Peristome with the above-mentioned insulating barrier opening of all sides in the above-mentioned coil-conductor; And the sidewall magnetic film that only on the sidewall of above-mentioned peristome, forms.
The coil part of the invention described above is characterised in that above-mentioned sidewall magnetic film also forms on the bottom surface of above-mentioned peristome.
The coil part of the invention described above is characterised in that, also is provided with the magnetosphere of imbedding above-mentioned peristome and forming, and the permeability of above-mentioned sidewall magnetic film is higher than above-mentioned magnetospheric permeability.
The coil part of the invention described above is characterised in that, also is provided with the magnetic substrates up and down of the above-mentioned insulating barrier of clamping.
According to the present invention, can realize to obtain coil part high impedance, excellent in high-frequency characteristics.
Description of drawings
Fig. 1 is the cutaway view of the common-mode filter 1 of the embodiment of the invention.
Fig. 2 be the common-mode filter 1 of the embodiment of the invention manufacturing process's cutaway view (one of).
Fig. 3 is manufacturing process's cutaway view (two) of the common-mode filter 1 of the embodiment of the invention.
Fig. 4 is manufacturing process's cutaway view (three) of the common-mode filter 1 of the embodiment of the invention.
Fig. 5 is manufacturing process's cutaway view (four) of the common-mode filter 1 of the embodiment of the invention.
Fig. 6 is manufacturing process's cutaway view (five) of the common-mode filter 1 of the embodiment of the invention.
Fig. 7 is manufacturing process's cutaway view (six) of the common-mode filter 1 of the embodiment of the invention.
Fig. 8 is manufacturing process's cutaway view (seven) of the common-mode filter 1 of the embodiment of the invention.
Fig. 9 is the cutaway view of common-mode filter 101 of the variation of the embodiment of the invention.
[Reference numeral]
1,101: common-mode filter; 3,5: magnetic substrates; 7: insulating barrier; 7a, 7b, 7c, 7d, 7e: dielectric film; 11: adhesive linkage; 33,35: coil-conductor; 41: magnetosphere; 42,44: peristome; 47,147: the sidewall magnetic film; M1, M2: magnetic circuit
Embodiment
Below, the coil part of the embodiment of the invention is described with Fig. 1 to Fig. 9.In the present embodiment, as coil part, be that example describes with the common-mode filter, this filter inhibition becomes the common mode current of the reason of the electromagnetic interference in the balance load mode.The structure of common-mode filter 1 at first, is described with Fig. 1.Fig. 1 shows the cross section of the common-mode filter 1 that dissects with the plane of the central shaft that comprises coil- conductor 33,35.
Common-mode filter 1 has rectangular-shaped profile, and it is formed by rectangular-shaped 3,5 laminate films of 2 magnetic substrates (magnetic substrates up and down) of the thin plate of subtend configuration and magnetosphere 41.As shown in Figure 1, common-mode filter 1 is provided with 3,5 of magnetic substrates: form spiral helicine coil- conductor 33,35 separately; Imbedded the insulating barrier 7 of coil- conductor 33,35; Peristome 42 with insulating barrier 7 openings of interior all sides of coil- conductor 33,35; And the sidewall magnetic film 47 that only on the sidewall of peristome 42, forms.
Coil-conductor 35 forms directly over coil-conductor 33 across dielectric film 7c, disposes with coil-conductor 33 subtends.Coil-conductor 33 and coil-conductor 35 form with roughly the same helical form.In addition, among the application, spiraling of will in same plane, forming is called spiral (spiral).Coil-conductor 33 and coil-conductor 35 form in the distinct plane parallel with the substrate surface of magnetic substrates 3,5 respectively.Coil-conductor 33 and coil-conductor 35 spiral on same direction, for example see from the substrate surface normal direction of magnetic substrates 5 side magnetic substrates 3,5, counterclockwise to spiral.Coil-conductor 33 is formed on the dielectric film 7b.Coil-conductor 35 is formed on the dielectric film 7c.
On the sidewall of peristome 42, form sidewall magnetic film 47.Sidewall magnetic film 47 contacts with peristome 42 interior dielectric film 7b, 7c, 7d, 7e.Sidewall magnetic film 47 is by for example ferronickel (NiFe), and the material that ferro-cobalt (CoFe), cobalt zirconium tantalum (CoZrTa) or cobalt ferronickel (CoNiFe) etc. have relative high permeability forms.Sidewall magnetic film 47 film with galvanoplastic or sputtering method etc. after dielectric film 7e forms forms technology formation.
Sidewall magnetic film 47 only is formed on the sidewall of peristome 42, on the bottom of dielectric film 7a or dielectric film 7e, does not form.Therefore, sidewall magnetic film 47 in the bottom of coil-conductor 33 and the top of coil-conductor 35 form, not with the top subtend configuration of the following and coil-conductor 35 of coil-conductor 33.In addition, sidewall magnetic film 47 also not on the bottom surface of peristome 42,44 or, on the sidewall of peristome 44 ( dielectric film 7b, 7c, 7d, 7e in the peristome 44 are last) form.
Common-mode filter 1 is provided with the magnetosphere 41 of imbedding peristome 42,44 and forming.Magnetosphere 41 also forms on dielectric film 7e, with the top covering of dielectric film 7e.Magnetosphere 41 is by the complex ferrite of sneaking into ferritic magnetic (magnetic) in the polyimide resin.The permeability of sidewall magnetic film 47 is higher than the permeability of magnetosphere 41.The formation of magnetosphere 41 and sidewall magnetic film 47 can improve the mutual magnetic degree of coupling of coil-conductor 33 と coil-conductors 35, increases common code impedance simultaneously, and improves impedance operator.
On magnetosphere 41, form adhesive linkage 11, bonding magnetic substrates 5 on adhesive linkage 11. Magnetic substrates 3,5 is with insulating barrier 7, coil- conductor 33,35, magnetosphere 41, sidewall magnetic film 47 and adhesive linkage 11 clampings.
The magnetic material of magnetic substrates 3,5 usefulness ferrite sintered bodies, complex ferrite etc. forms. Dielectric film 7a, 7b, 7c, 7d, 7e form through the material that insulating properties is good, processability is good such as coating polyimide resin, epoxy resin resin respectively and with the reservation shape patterning.Coil- conductor 33,35 and top and bottom lead-out wire are through forming with the copper of conductivity and excellent processability, silver (Ag), aluminium film forming such as (Al) and with the reservation shape patterning.The thickness of the thickness of dielectric film 7a, 7b, 7c, 7d, 7e and top and bottom lead-out wire for example is 5～10 μ m.The thickness of coil- conductor 33,35 for example is 15～25 μ m.The thickness of sidewall magnetic film 47 for example is 0.05～2.00 μ m.The thickness of the magnetosphere 41 on dielectric film 7e top for example is 0.05～2.00 μ m.
Then, the action with regard to the common-mode filter 1 of present embodiment describes.As shown in Figure 1; With coil- conductor 33,35 energisings, thereby in the cross section of the central shaft that comprises coil- conductor 33,35, form successively through the magnetosphere 41 in the magnetosphere 41 in magnetic substrates 3, dielectric film 7a, the peristome 42, adhesive linkage 11, magnetic substrates 5, adhesive linkage 11, the peristome 44, magnetic circuit (magnetic loop) M1 of dielectric film 7a.In addition, form simultaneously successively through the magnetosphere 41 in magnetic substrates 3, dielectric film 7a, sidewall magnetic film 47, magnetosphere 41, adhesive linkage 11, magnetic substrates 5, adhesive linkage 11, the peristome 44, the magnetic circuit M2 of dielectric film 7a (or reverse order) with magnetic circuit M1.Dielectric film 7a and adhesive linkage 11 are non magnetic, but owing to be the film about number μ m, in this part the leakage of the magnetic line of force take place hardly, and magnetic circuit M1, M2 can roughly regard closed magnetic circuit as.Like this, common-mode filter 1 closed magnetic circuit is made up of a plurality of magnetic circuit M1, M2.
In peristome 42, only form magnetosphere 41 and do not form in the common-mode filter of sidewall magnetic film 47, only form the magnetic circuit M1 through the magnetosphere 41 in the peristome 42, the magnetic circuit M2 that does not form through sidewall magnetic film 47 forms.As the method that in this common-mode filter, obtains high common code impedance or good high frequency characteristics, consider the ferritic particle diameter that magnetosphere 41 is comprised is reduced or the permeability of magnetosphere 41 is improved.But the ferritic particle diameter that magnetosphere 41 is comprised reduces or the permeability of magnetosphere 41 is improved is limited, and therefore, the common-mode filter that only forms magnetosphere 41 is restricted on high common code impedance and the good high frequency characteristics obtaining.
On the other hand, in the common-mode filter 1 of present embodiment,, beyond magnetic circuit M1, also form magnetic circuit M2 through sidewall magnetic film 47 owing in peristome 42, also form sidewall magnetic film 47 beyond the magnetosphere 41.Therefore, closed magnetic circuit is made up of a plurality of magnetic circuit M1, M2.Because the permeability of sidewall magnetic film 47 is higher than the permeability of magnetosphere 41, compares the magnetic circuit that magnetic circuit M2 becomes high permeability with magnetic circuit M1.Therefore, compare with the common-mode filter that is only formed by magnetosphere 41, the magnetic resistance of the closed magnetic circuit of common-mode filter 1 reduces, through the magnetic flux increase of closed magnetic circuit.Therefore, compare with the common-mode filter that is only formed by magnetosphere 41, common-mode filter 1 has the high common code impedance that only can not be obtained by magnetic circuit M1.In addition; Compare with the common-mode filter that only forms by magnetosphere 41; Common-mode filter 1 has improved the high frequency performance (high frequency characteristics) of common code impedance characteristic or difference mode signal attenuation characteristic in the high frequency region etc., and can improve the cut-off frequency (fc) in the difference mode signal transmission characteristic.
In the patent documentation 1 disclosed inductance element, be provided with: coil; The through-hole section that forms in the coil; Inwall with through-hole section of multi-layered magnetic layer; And be located at coil top and below the multi-layered magnetic layer.Coil is embedded in the coil insulation material, be disposed at coil top and below the multi-layered magnetic layer on the coil insulation material, form.The multi-layered magnetic layer is by magnetosphere and insulating barrier interaction cascading and constitute.Magnetospheric main component is at least a among Fe, Ni, the Co.Magnetosphere is formed by Fe etc., and it is lower that resistivity becomes.In addition, coil is also formed by the low material of resistivity.Therefore, magnetosphere has the electrode effect, and the coil insulation material that in the patent documentation 1 disclosed inductance element, be disposed at magnetosphere, coil above the coil, is sandwiched between them forms electric capacity (stray capacitance).In addition, the coil insulation material that be disposed at magnetosphere below the coil, coil, they is sandwiched in wherein forms electric capacity (stray capacitance).Therefore, if the coil insulation material between magnetosphere and the coil is thinner relatively, then this stray capacitance is just relatively large.Increase in the influence of this stray capacitance of high frequency region to the characteristic of inductance element, therefore, if this stray capacitance is relatively large, then the high frequency performance of inductance element is with regard to variation.Therefore, patent documentation 1 disclosed inductance element is not suitable for high-frequency applications.In addition, if reduce this stray capacitance and between magnetosphere and coil, form thick coil insulation material, then be difficult to realize the slimming of inductance element.
On the other hand, in the common-mode filter 1 of present embodiment, sidewall magnetic film 47 only forms on the sidewall of peristome 42, does not form magnetic film in the bottom of coil-conductor 33 and the top of coil-conductor 35.Therefore, in the common-mode filter 1, do not form stray capacitance between magnetic film that between magnetic film that forms in the bottom of coil-conductor 33 and the coil-conductor 33 and top of coil-conductor 35 forms and the coil-conductor 35.Therefore, common-mode filter 1 is different with patent documentation 1 disclosed inductance element, does not have because of magnetic film and coil-conductor 33, forms the situation that stray capacitance causes high frequency performance to worsen between 35.Therefore, common-mode filter 1 can have good high frequency performance, is very suitable for high-frequency applications.In addition, needn't form dielectric film 7a, 7b, 7d, 7e thicker in magnetic film and coil-conductor 33, the stray capacitance that forms between 35, can realize the slimming of common-mode filter 1 for reducing.
Like this, common-mode filter 1 has high common code impedance and gets, and has good high frequency characteristics.
Then, be example with regard to the manufacturing approach of the coil part of present embodiment with common-mode filter 1, describe referring to figs. 1 through Fig. 8.Fig. 2 to Fig. 8 is manufacturing process's cutaway view of the common-mode filter 1 that dissects with the plane of central shaft that comprises coil-conductor 33,35.Form a plurality ofly on common-mode filter 1 wafer simultaneously, but Fig. 1 to Fig. 8 only illustrates 1 common-mode filter 1.In addition, all inscapes with the effect identical with the inscape of common-mode filter shown in Figure 11, function are all attached with prosign, and its detailed description is omitted.
At first, as shown in Figure 2, coating polyimide resin on magnetic substrates 3 and form the dielectric film 7a of thickness 5～10 μ m.Dielectric film 7a is with formation such as spin-coating method, infusion process, spraying process or print processes.Then, dielectric film 7a is solidified (sclerosis).Each dielectric film 7b, 7c, the 7d of back literary composition explanation, 7e uses, and the method identical with dielectric film 7a forms.
Then, on whole, form the metal level (not shown) of Cu etc. with vacuum film formation method (vapour deposition method, sputtering method etc.) or galvanoplastic.Electrode film adopts the material with conductivity to get final product, preferably the formation material identical materials of the electroplating film of employing and back literary composition explanation.As in order to improve dielectric film 7a and electrode film adaptation buffer film, can in the lower floor of electrode film, form the for example adhesive linkage of Cr (chromium) film or Ti (titanium) film etc.
Then, on whole, apply photoresist and form photoresist layer, as required, carry out the prebake conditions of photoresist layer is handled.Then, photoresist layer is shone exposure light, photoresist layer is made public across the mask of the pattern of having drawn the bottom lead-out wire.Then, as required, after having done heat treatment, photoresist layer is developed with alkaline-based developer.As alkaline-based developer, for example, can adopt the tetramethylammonium hydroxide (TMAH) of predetermined concentration.
Then, get into clean operation from developing procedure.With detergent remover the developer solution in the photoresist layer is cleaned, the development solubilizing reaction of photoresist layer is stopped.Thereby, form the photoresist frame that photoresist layer is patterned into reservation shape.As detergent remover, for example can adopt pure water.After clean finishing, detergent remover is got rid of and in addition dry.If be necessary, also can make detergent remover dry magnetic substrates 3 heating.
Then, magnetic substrates 3 being immersed in the electroplate liquid in the electroplating bath, is that pattern carries out electroplating processes with the photoresist frame, between photoresist frame, forms the electroplating film of Cu etc.Then, as required, with magnetic substrates 3 washing and make it dry, with organic solvent photoresist frame is peeled off from dielectric film 7a then.Then, will be that mask is removed the electrode film that exposes with photoresist layer with the electroplating film, remove through dry ecthing (ion grinding or reactive ion etching (RIE) etc.) or wet etching.
Thereby, the bottom lead-out wire (not shown) that on dielectric film 7a, forms.The bottom lead-out wire forms the for example thickness of 5～10 μ m.The coil- conductor 33,35 of back literary composition explanation and top lead-out wire are used with the same method of bottom lead-out wire and are formed.
Then, coating polyimide resin and form the dielectric film 7b of thickness 5～10 μ m on whole.Then, with dielectric film 7b exposure, development and patterning.Thereby, the through hole (not shown) that on dielectric film 7b, forms peristome 42,44 and an end of bottom lead-out wire is exposed.Then, dielectric film 7b is solidified.
Then, on whole, form the metal level (not shown) of Cu etc. with vacuum film formation method or galvanoplastic.Then, on whole, apply photoresist and form photoresist layer, as required photoresist layer is carried out prebake conditions and handle.Then, photoresist layer is shone exposure light, photoresist layer is made public across the mask of the pattern of having drawn coil-conductor 33.Then, done heat treatment as required after, with alkaline-based developer photoresist layer is developed.Then, carry out the clean operation same with the formation operation of bottom lead-out wire.Thereby, form the photoresist frame that photoresist layer pattern is turned to reservation shape.
Then, magnetic substrates 3 being immersed in the electroplate liquid of electroplating bath, is that pattern carries out the electroplating processes row with the photoresist frame, between photoresist frame, forms the electroplating film of Cu etc.Then, as required with magnetic substrates 3 washing and make it dry, with organic solvent photoresist frame is peeled off from dielectric film 7b then.Then, will deluster with the electroplating film mask and carve the electrode film that exposes behind the glue-line and remove with dry ecthing (ion grinding or reactive ion etching (RIE) etc.) or wet etching.
Thereby, as shown in Figure 3, on dielectric film 7b, form the coil-conductor 33 that electrode film and electroplating film cascade.Interior all side ends of coil-conductor 33 are gone up the end that the through hole that forms is connected to the bottom lead-out wire via dielectric film 7b.Coil-conductor 33 forms the for example thickness of 15～25 μ m.
Then, as shown in Figure 4, coating polyimide resin on whole and form the dielectric film 7c of thickness 5～10 μ m.Then, with dielectric film 7c exposure, development and patterning.Thereby, on dielectric film 7c, form peristome 42,44.Then, dielectric film 7c is solidified.
Then, as shown in Figure 5, through on dielectric film 7c, forming coil-conductor 35 with coil-conductor 33 same formation methods.Coil-conductor 35 for example forms the thickness of 15～25 μ m.
Then, coating polyimide resin and form the dielectric film 7d of thickness 5～10 μ m on whole.Then, with dielectric film 7d exposure, development and patterning.Thereby, the through hole (not shown) that on dielectric film 7d, forms peristome 42,44 and interior all side ends of coil-conductor 35 are exposed.Then, dielectric film 7d is solidified.
Then, use the top lead-out wire (not shown) that on dielectric film 7d, forms with the same formation method of bottom lead-out wire.One end of top lead-out wire is connected to interior all side ends of coil-conductor 35 via the through hole that is formed at dielectric film 7d.The bottom lead-out wire forms the for example thickness of 5～10 μ m.
Then, as shown in Figure 6, coating polyimide resin on whole and form the dielectric film 7e of thickness 5～10 μ m.Then, with dielectric film 7e exposure, development and patterning.Thereby, on dielectric film 7e, form peristome 42,44.Then, dielectric film 7e is solidified.Through above operation, form the insulating barrier 7 that constitutes by dielectric film 7a, 7b, 7c, 7d, 7e.Coil- conductor 33,35 and top and bottom lead-out wire are embedded in the insulating barrier 7.
Then, on whole, form the magnetic film of the NiFe etc. of thickness 0.05～2.0 μ m with sputtering method.Magnetic film also forms on the sidewall of peristome 42 and bottom surface.Then, on whole, apply photoresist and form photoresist layer, as required, photoresist layer is carried out prebake conditions handle.Then,, to the photoresist layer irradiates light photoresist layer is made public across the mask of the pattern of drawing sidewall magnetic film 47.Then, done heat treatment as required after, with alkaline-based developer photoresist layer is developed.Then, carry out forming the same clean operation of operation with the bottom lead-out wire.Thereby, the frame shape photoresist frame that the magnetic film that forms on the sidewall of formation with peristome 42 covers.
Then, be etching mask with the photoresist frame, with dry ecthing or wet etching magnetic film is removed.Thereby, as shown in Figure 7, on the sidewall of peristome 42, form sidewall magnetic film 47.Then, with organic solvent photoresist frame is peeled off from sidewall magnetic film 47.With the formation method of sputtering method, but also can adopt galvanoplastic in the present embodiment as sidewall magnetic film 47.
Then, shown in Figure 8, in peristome 42,44, imbed the complex ferrite of sneaking into ferritic magnetic in the resin, in peristome 42,44, form magnetosphere 41.Magnetosphere 41 also forms on dielectric film 7e, with the top covering of dielectric film 7e.The magnetosphere 41 on dielectric film 7e top for example forms the thickness of 0.05～2.0 μ m.
Then, as shown in Figure 1, adhesive on magnetosphere 41 and form adhesive linkage 11.Then, magnetic substrates 5 is fixed on the adhesive linkage 11.Then, cutting crystal wafer is with the 1 cut-out separation of common-mode filter one by one of shaped like chips.Thereby face exposes the other end of top and bottom lead-out wire in the same side of common-mode filter 1.Simultaneously, expose in the subtend face side of this side the outer circumferential side end of coil-conductor 33,35.Then, grind common-mode filter 1 and carry out chamfering in the bight.
Then, on the exposed division of top and bottom lead-out wire and coil- conductor 33,35, vertical with substrate surface and cross magnetic substrates 3,5 and form the 1st to the 4th outer electrode (not shown) on the subtend face of magnetic substrates 3,5.The other end of bottom lead-out wire is connected to the 1st outer electrode.The other end of top lead-out wire is connected to the 2nd outer electrode and connects.The outer circumferential side end of coil-conductor 33 is connected to the 3rd outer electrode and connects.The outer circumferential side end of coil-conductor 35 is connected to the 4th outer electrode and connects.So, common-mode filter 1 shown in Figure 1 is promptly accused completion.
As described above; Manufacturing approach according to the common-mode filter 1 of present embodiment; After forming the dielectric film 7e that technology is formed into the superiors with film; Before magnetosphere 41 is filled into peristome 42,44, form technology, on the sidewall of peristome 42, form with NiFe etc. and have the sidewall magnetic film 47 that the formation material of relative high magnetic permeability forms with the film of sputtering method or galvanoplastic etc.Manufacturing approach according to common-mode filter 1; Can be same with dielectric film 7a, 7b, 7c, 7d, 7e, top and bottom lead-out wire, coil- conductor 33,35; Form technology with film and form sidewall magnetic film 47, and can form operation formation dielectric film 7a, 7b, 7c, 7d, 7e, top and bottom lead-out wire, coil- conductor 33,35 and sidewall magnetic film 47 by all a series of films.According to the manufacturing approach of the common-mode filter 1 of present embodiment, can make common-mode filter 1 with high common code impedance and excellent in high-frequency characteristics.
The coil part of the variation of present embodiment then, is described with Fig. 9.Fig. 9 is the common-mode filter 101 as coil part of this variation, the cross section of the common-mode filter 101 that expression is dissectd with the plane of central shaft that comprises coil-conductor 33,35.In the common-mode filter 1,47 of sidewall magnetic films form on the sidewall of peristome 42.Relatively, common-mode filter 101 is characterised in that, also on the bottom surface of peristome 42, forms sidewall magnetic film 147.Sidewall magnetic film 147 forms on the sidewall of peristome 42 and bottom surface.The sidewall magnetic film 147 that on the bottom surface of peristome 42, forms contacts with dielectric film 7a in the peristome 42.
In the common-mode filter 101, same with common-mode filter 1, in peristome 42, except magnetosphere 41, also form sidewall magnetic film 147, there are a plurality of magnetic circuit M1, M2 to form.In the common-mode filter 101, the sidewall magnetic film 147 that magnetic circuit M1 also forms on the bottom surface through peristome 42 except non-magnetic insulating film 7a.Therefore, compare with common-mode filter 1, in the common-mode filter 101, magnetic flux is difficult to through magnetic circuit M1, through the magnetic flux minimizing of closed magnetic circuit.Therefore, common-mode filter 101 is poorer slightly on characteristic than common-mode filter 1.
But, owing to a plurality of magnetic circuit M1, M2, comparing with the common-mode filter that only forms magnetosphere 41, common-mode filter 101 has high common code impedance and can obtain good high frequency characteristics.
Below, do simple declaration with regard to the manufacturing approach of the common-mode filter 101 of this variation.Be shaped as the frame shape in order to the photoresist frame that forms sidewall magnetic film 47 in the manufacturing approach of common-mode filter 1; And in the manufacturing approach of common-mode filter 101 in order to the column that is shaped as of the photoresist frame that forms sidewall magnetic film 147; Except this point, the manufacturing approach of common-mode filter 101 is identical with the manufacturing approach of common-mode filter 1.
At first; Adopt the manufacturing approach same, on magnetic substrates 3, form dielectric film 7a, bottom lead-out wire, dielectric film 7b, coil-conductor 33, dielectric film 7c, coil-conductor 35, dielectric film 7d, top lead-out wire and dielectric film 7e (with reference to Fig. 2 to Fig. 6) successively with common-mode filter 1.Then, on whole, form magnetic film.Then, form the column photoresist frame that the magnetic film that forms on the sidewall of the peristome 42 and bottom surface is covered.Then, photoresist frame as etching mask, is removed magnetic film through dry ecthing or wet etching.Thereby, as shown in Figure 9, on the sidewall of peristome 42 and bottom surface, form sidewall magnetic film 147.Then, with organic solvent photoresist is peeled off from frame sidewall magnetic film 147.Then; Adopt the manufacturing approach same, form magnetosphere 41 (with reference to Fig. 8), and form adhesive linkage 11 with common-mode filter 1; Magnetic substrates 5 is fixed on the adhesive linkage 11; Cutting crystal wafer and separate into the common-mode filter one by one 101 of shaped like chips carries out chamfering in the bight then, forms the 1st to the 4th outer electrode.So, common-mode filter 101 shown in Figure 9 is promptly accused completion.
That kind as described above, the shape in order to the photoresist frame that forms sidewall magnetic film 47 in the manufacturing approach of common-mode filter 1 is made as the frame shape, and the shape in order to the photoresist frame that forms sidewall magnetic film 147 is made as column in the manufacturing approach of common-mode filter 101.The area of sidewall magnetic film 147 is bigger than sidewall magnetic film 47.Therefore, to have a formation area bigger than frame shape photoresist frame big for the column photoresist frame.Therefore, the column photoresist frame forms pattern easily than frame shape photoresist frame.Therefore, common-mode filter 101 is made than common-mode filter 1 easily.
Common-mode filter 1,101 is small-sized more, and its peristome 42 just becomes more little.Therefore, common-mode filter 1,101 is small-sized more, and frame shape or column photoresist frame just become more little, but the column photoresist frame still forms pattern than frame shape photoresist frame easily.Therefore, the column photoresist frame is realized miniaturization easily than frame shape photoresist frame.Therefore, common-mode filter 101 is realized miniaturization easily than common-mode filter 1.
The present invention is not limited to the foregoing description, possibly have various distortion.
In the foregoing description, be that example is described with the common-mode filter 1,101 of 1 group of coil- conductor 33,35, but the present invention does not receive the restriction of this example with subtend configuration.For example, the present invention is equally applicable to the common-mode filter array with 2 groups of coil-conductors, wherein in each coil- conductor 33,35 and establish 1 coil-conductor.In this common-mode filter array, be formed on coil- conductor 33,35 interior all sides and and 1 group of coil-conductor establishing in 2 peristomes of insulating barrier opening of all sides, only on 2 peristomes for example sidewall separately, form the sidewall magnetic film.In addition, for example, also can and 2 groups of coil-conductors establishing between increase coil-conductor more than 1 or 2 again and carry out and establish.These common-mode filter arrays can be obtained the effect same with the foregoing description.
In addition, be the coil part that example has been explained the foregoing description with common-mode filter 1,101, but the present invention also is applicable to inductance coil not as limit.For example; In the manufacturing approach of the common-mode filter 1 of the foregoing description; Through omitting the operation (with reference to Fig. 5 and Fig. 6) that forms coil-conductor 35, dielectric film 7d, 7e, only on the sidewall of peristome 42, form sidewall magnetic film 47, just can make with magnetosphere 41 is the inductance coil of magnetic core.This inductance coil owing to form a plurality of magnetic circuit M1, M2 equally with common-mode filter 1, therefore has high impedance and good high frequency characteristics.In addition, the present invention also is applicable to transformer.
In addition, in the common-mode filter 1, form sidewall magnetic film 47 on the sidewall of the peristome 44 that also can form at the outer circumferential side of coil-conductor 33,35.In this common-mode filter, except also on the sidewall of peristome 44, forming sidewall magnetic film 47 on the sidewall of peristome 42.Therefore, compare with common-mode filter 1, this common-mode filter forms the magnetic circuit of the permeability higher than magnetic circuit M2, reduces the magnetic resistance of closed magnetic circuit, and increases the magnetic flux through closed magnetic circuit.Therefore, compare with common-mode filter 1, this common-mode filter has high common code impedance and good high frequency characteristics.
In addition, in the common-mode filter 101, reach (on the dielectric film 7a in the peristome 44) formation sidewall magnetic film 147 on the bottom surface on the sidewall of the peristome 44 that also can form at the outer circumferential side of coil-conductor 33,35.In this common-mode filter, except also on the sidewall of peristome 44, forming 147 formation of sidewall magnetic film on the sidewall of peristome 42.Therefore, compare, form magnetic circuit in this common-mode filter, can reduce the magnetic resistance of closed magnetic circuit, and increase magnetic flux through closed magnetic circuit with permeability higher than magnetic circuit M2 with common-mode filter 101.Therefore, compare with common-mode filter 101, this common-mode filter has high common code impedance and good high frequency characteristics.
Claims (3)
1. a coil part is characterized in that, is provided with:
Form spiral helicine coil-conductor;
Imbedded the insulating barrier of said coil-conductor;
Peristome with the said insulating barrier opening of all sides in the said coil-conductor;
Imbed that said peristome forms, the magnetosphere through the 1st magnetic circuit and
Has than the high permeability of said magnetospheric permeability sidewall magnetic film that only on the sidewall of said peristome, form, through 2nd magnetic circuit different with said the 1st magnetic circuit.
2. a coil part is characterized in that, is provided with:
Form spiral helicine coil-conductor;
Imbedded the insulating barrier of said coil-conductor;
Peristome with the said insulating barrier opening of all sides in the said coil-conductor;
Imbed that said peristome forms, the magnetosphere through the 1st magnetic circuit and
Have than the high permeability of said magnetospheric permeability, on the sidewall of said peristome and sidewall magnetic film that form on the bottom surface of said peristome, through 2nd magnetic circuit different with said the 1st magnetic circuit.
3. claim 1 or 2 described coil parts is characterized in that,
Also be provided with the magnetic substrates up and down of the said insulating barrier of clamping.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007018949A JP4807270B2 (en) | 2007-01-30 | 2007-01-30 | Coil parts |
| JP2007-018949 | 2007-01-30 |
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| CN101276673A CN101276673A (en) | 2008-10-01 |
| CN101276673B true CN101276673B (en) | 2012-01-11 |
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| KR101504798B1 (en) * | 2011-09-05 | 2015-03-23 | 삼성전기주식회사 | Magnetic substrate, common mode filter, method for manufacturing magnetic substrate and mehtod for manufacturing common mode filter |
| KR101862409B1 (en) * | 2011-12-22 | 2018-07-05 | 삼성전기주식회사 | Chip inductor and method for manufacturing chip inductor |
| JP5929401B2 (en) * | 2012-03-26 | 2016-06-08 | Tdk株式会社 | Planar coil element |
| JP5789573B2 (en) * | 2012-08-23 | 2015-10-07 | 株式会社神戸製鋼所 | Winding element for noise reduction |
| JP6204181B2 (en) * | 2013-12-18 | 2017-09-27 | 京セラ株式会社 | Coil-embedded substrate and DC-DC converter |
| WO2016167038A1 (en) | 2015-04-15 | 2016-10-20 | 東レ株式会社 | Heat-resistant resin composition, method for manufacturing heat-resistant resin film, method for manufacturing interlayer insulation film or surface protective film, and method for manufacturing electronic component or semiconductor component |
| KR101618015B1 (en) * | 2015-10-14 | 2016-05-03 | 이기윤 | Coil component for electromagnetic actuator and manufacturing method thereof |
| KR101617135B1 (en) * | 2016-01-28 | 2016-04-29 | 이기윤 | Coil component and manufacturing method thereof |
| KR101617136B1 (en) * | 2016-01-28 | 2016-04-29 | 이기윤 | Coil component and manufacturing method thereof |
| US20200303108A1 (en) * | 2017-08-07 | 2020-09-24 | Panasonic Intellectual Property Management Co., Ltd. | Common mode noise filter |
| JP7069739B2 (en) * | 2018-01-17 | 2022-05-18 | Tdk株式会社 | Coil parts and their manufacturing methods |
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| CN1591713A (en) * | 2003-09-04 | 2005-03-09 | Tdk株式会社 | Method of manufacturing coil component |
| CN1685452A (en) * | 2002-10-31 | 2005-10-19 | 松下电器产业株式会社 | Inductance part and electronic device using the same |
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| JPH0217447Y2 (en) * | 1984-12-21 | 1990-05-16 | ||
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| JP2986520B2 (en) * | 1990-07-31 | 1999-12-06 | ティーディーケイ株式会社 | Electronic component and method of manufacturing the same |
| JPH04101404A (en) * | 1990-08-21 | 1992-04-02 | Tdk Corp | Electronic component and its manufacturing method |
| JPH04101403A (en) * | 1990-08-21 | 1992-04-02 | Tdk Corp | Electronic component and its manufacturing method |
| JPH04276609A (en) * | 1991-03-04 | 1992-10-01 | Tdk Corp | Electronic parts |
| JP3912601B2 (en) * | 2003-07-28 | 2007-05-09 | Ｔｄｋ株式会社 | Common mode choke coil, manufacturing method thereof, and common mode choke coil array |
| JP2005116647A (en) * | 2003-10-06 | 2005-04-28 | Tdk Corp | Common mode choke coil, manufacturing method thereof, and common mode choke coil array |
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| CN1591713A (en) * | 2003-09-04 | 2005-03-09 | Tdk株式会社 | Method of manufacturing coil component |
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| JP2008186990A (en) | 2008-08-14 |
| JP4807270B2 (en) | 2011-11-02 |
| CN101276673A (en) | 2008-10-01 |
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