CN101257266A - Silicon based piezoelectricity cantilever beam minitype electric generating apparatus - Google Patents
Silicon based piezoelectricity cantilever beam minitype electric generating apparatus Download PDFInfo
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- CN101257266A CN101257266A CNA2008100101327A CN200810010132A CN101257266A CN 101257266 A CN101257266 A CN 101257266A CN A2008100101327 A CNA2008100101327 A CN A2008100101327A CN 200810010132 A CN200810010132 A CN 200810010132A CN 101257266 A CN101257266 A CN 101257266A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 43
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 21
- 239000010936 titanium Substances 0.000 claims abstract description 21
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000001312 dry etching Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000011084 recovery Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000005459 micromachining Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 244000187656 Eucalyptus cornuta Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Y02B60/50—
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- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
The inventive silicon based piezo-electricity socle girder miniature power supply device, pertains to the micro-energy sources field in the electronic technology Micro Electro-Me-chanical Systems field. A silicon based piezo-electricity socle girder miniature electric generating apparatus is provided with a silica fixing frame, an oxidizing layer, a platinum/titanium lower metallic layer, a piezo-electricity PZT layer, a platinum/titanium upper metallic layer, an electrode insulation protection layer, and a vibrating base; the structure of the silica fixing frame combines the monocrystal silicon wet method etching and dry-etching to process, whose structure is integrated as a whole, and the center part of the structure is in a socle girder shape, which includes a silicium socle girder and a free end mass block; the piezo-electricity power supply device uses a micro-machining technique to integrally machine, and can realize the integration of the power supply and the microelectronic devices. The service-life of the power supply is long, the structure is simple, and the power supply is environmental protective and energy-saving, which can realize the multi-point disposition of wireless sensing network, without incessant replacement of power supply.
Description
Technical field
Silicon based piezoelectricity cantilever beam miniature power generating device of the present invention belongs to the little energy field in electronic technology and the MEMS (micro electro mechanical system) field.
Background technology
Since first transistor in the world is born till now, microelectronics technology is always with the fast development of Moore's Law speed, since carrying out the research in MEMS (micro electro mechanical system) field latter stage from eighties of last century, with microsensor, actuator is that the micro element volume and the quality of representative dwindled just rapidly, and comparatively slow always as little energy technology development of energy supply, little energy has become a technical bottleneck problem of microminiaturized development.Widely used miniature energy supply power supply mainly is a chemical cell at present, as lithium battery, NI-G, nickel-zinc cell etc., though they can recharging, repeatedly use, energy density is limited, useful life is shorter, generally only has several days disposable useful life to some months.What be in the development phase at present has micro solar battery, fuel cell, a nuclear-isotope bat etc., more than three class batteries plurality of advantages is all arranged, but the scope of application also has tangible restriction, must there be sunlit place could produce electric energy output as solar cell, fuel cell needs continuous postcombustion, and steam discharging is arranged, and the nuclear-isotope bat safety problem limits it always and uses on consumer electronic device.In order to improve the useful life of microelectronics active device, Britain scholar Williams and Yates were converted into the theory of electric energy in 1996 in article Analysis of micro-electric generator for Microsystems (sensors and actuators A52, page 8-11) proposition collection environment vibrational energy.Energy transfer mechanism mainly contains three kinds: piezoelectricity conversion, electromagnetic conversion, static conversion.Wherein, electromagnetic conversion has been introduced magnetic field has a tangible influence to the transmission of signal in the microelectronic component, the static conversion needs constant electric field to keep, and the piezoelectricity conversion can be avoided above two shortcomings, and it is to utilize the direct piezoelectric effect of piezoelectric that vibration is caused that the mechanical strain of structure is converted to electric energy.Williams has proposed three kinds of theoretical models that transition form is general, but does not propose suitable piezoelectric transducer device, and this patent has been made feasible miniature piezoelectric Blast Furnace Top Gas Recovery Turbine Unit (TRT).
Summary of the invention
The technical problem to be solved in the present invention is that the vibrational energy in the environment is converted to electric energy, supplies with for the microelectronics active device provides power supply reliably and with long-term, has advantages such as conversion efficiency height, simple in structure, with low cost, reliable, integrated making.
The technical solution used in the present invention is: a kind of silicon based piezoelectricity cantilever beam miniature power generating device has metal level 5 on siliceous fixed frame 1, oxide layer 2, platinum/titanium lower metal layer 3, piezoelectricity PZT layer 4, the platinum/titanium, electrode insulation protective layer 6, vibrating base 7 to constitute; The structure of siliceous fixed frame 1 is to utilize monocrystalline silicon wet etching and dry etching to combine to finish processing, and its structure is connected as a single entity, and the structure of its core is the cantilever beam shape, comprises silicon cantilever a and free end mass b; Siliceous fixed frame 1 upper surface oxidation forms silicon dioxide oxide layer 2; Platinum on the oxide layer 2/titanium lower metal layer 3 utilizes magnetron sputtering to finish; Piezoelectricity PZT layer 4 on platinum/titanium lower metal layer 3 utilizes time whirl coating growth of sol-gel Sol-Gel fado to make; It on it metal electrode 5 on platinum/titanium; The electrode insulation protective layer 6 of the superiors is the silicon dioxide insulator material, utilizes the magnetron sputtering method sputter to finish; On electrode insulation protective layer 6, be carved with power electrode lead-in wire groove c and d in addition.
Platinum/titanium lower metal layer 3 is formed silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT) positive and negative electrode with platinum/titanium lower metal layer 5.Metal electrode 5 is shaped as the plane or makes broach shape positive and negative electrode 8,9 on the platinum/titanium of silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT).
Cantilever beam a arrangement form in the siliceous fixed frame 1 of silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT) is single layout, or a plurality of cantilever array is arranged.
Effect of the present invention is: the piezoelectric power supplies device utilizes the integrated processing of micro fabrication, can be good at realizing that power supply, microelectronic component are integrated.Power source life is long, simple and reliable for structure, environmental protection and energy saving.The multiple spot layout of radio sensing network can be realized, power supply need not be constantly changed.In the design and fabrication of radio sensing network node, be with a wide range of applications.
Description of drawings
Accompanying drawing 1 is a silicon based piezoelectricity cantilever beam miniature power generating device B-B master cutaway view, wherein: 1---siliceous fixed frame, 2---oxide layer SiO
2, 3---platinum/titanium lower metal layer, 4---piezoelectricity PZT layer, 5---metal level on platinum/titanium, 6---the electrode insulation protective layer, 7---vibrating base, a---silica-based cantilever beam, b---free end mass, c top electrode lead-in wire groove, d---bottom electrode lead-in wire groove.
Accompanying drawing 2 is vertical views of silicon based piezoelectricity cantilever beam miniature power generating device A-A face.
Accompanying drawing 3 is silicon based piezoelectricity cantilever beam miniature power generating device overall schematic.
Accompanying drawing 4 is broach shape electrode structure schematic diagrames, wherein 8,9---and be broach shape positive and negative electrode.
Accompanying drawing 5 is a plurality of piezoelectric cantilever array type combination generating schematic diagrames.
Embodiment
The silicon based piezoelectricity cantilever beam miniature power generating device is a kind of ambient vibration can be converted to the miniature power generating device of electric energy, and its electricity generating principle is a direct piezoelectric effect of utilizing piezoelectric.Under the mechanical stress effect, deformation at first takes place in material, and deformation produces free charge on the surface of piezoelectric, is electric capacity with the piezoelectrics equivalence, and the apparent surface who then generates free charge forms electrical potential difference, connects load and forms energy output.
In conjunction with Fig. 1 embodiment is described, fixed frame 1 usefulness binding agent is fixed on the vibrating base 7, vibrates with environment.Cantilever beam a part produces forced vibration in the ambient vibration driving action, and free end mass b drives cantilever beam and swings up and down, and causes that 4 stretching of piezoelectricity PZT layer or the compression on the cantilever beam produces mechanical strain.According to direct piezoelectric effect, on the upper and lower surface metal electrode 3,5 of piezoelectric layer 4, generate free charge, external circuit links to each other with solder joint c, the d of metal electrode layer will have electric current to produce, and promptly outwards export electric energy.
Piezoelectric has anisotropic piezoelectric modulus matrix.Piezoelectric modulus commonly used has d31 and d33.The d31 form is that material internal should be changed direction the direction of an electric field that produces with mechanical-electric coupling in orthogonal direction; The d33 form is that should the change direction direction of an electric field that produces with mechanical-electric coupling of material internal is identical.Utilize the d31 form exactly at the piezoelectric cantilever shown in the accompanying drawing 1,3 thus, and the piezoelectric cantilever distribution of electrodes form shown in the accompanying drawing 4 is exactly to utilize the d33 form to realize the collection that the piezoelectricity coupling produces electric charge.
Accompanying drawing 5 is a plurality of identical piezoelectric cantilevers to be concentrated make, and forms array.With connecting with in parallel similar of battery, the electrode of a plurality of piezoelectric cantilevers also can be connected in series or parallel according to the demand of outside power consumption device.Can improve the power of micro power like this.
Claims (3)
1, a kind of silicon based piezoelectricity cantilever beam miniature power generating device, it is characterized in that having metal level (5) on siliceous fixed frame (1), oxide layer (2), platinum/titanium lower metal layer (3), piezoelectricity PZT layer (4), the platinum/titanium, electrode insulation protective layer (6), vibrating base (7) to constitute; The structure of siliceous fixed frame (1) is to utilize monocrystalline silicon wet etching and dry etching to combine to finish processing, and its structure is connected as a single entity, and the structure of its core is the cantilever beam shape, comprises silicon cantilever (a) and free end mass (b); Siliceous fixed frame (1) upper surface oxidation forms silicon dioxide oxide layer (2); Platinum on the oxide layer (2)/titanium lower metal layer (3) utilizes magnetron sputtering to finish; Piezoelectricity PZT layer (4) on platinum/titanium lower metal layer (3) utilizes time whirl coating growth of sol-gel (Sol-Gel) fado to make; It on it metal electrode on platinum/titanium (5); The electrode insulation protective layer (6) of the superiors is the silicon dioxide insulator material, utilizes the magnetron sputtering method sputter to finish; On electrode insulation protective layer (6), be carved with power electrode lead-in wire groove (c) and (d) in addition; Platinum/titanium lower metal layer (3) is formed silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT) positive and negative electrode with platinum/titanium lower metal layer (5).
2, silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 1, it is characterized in that of metal electrode on its platinum/titanium (5), metal electrode on platinum/titanium (5) is shaped as the plane or is broach shape positive and negative electrode (8,9).
3, silicon based piezoelectricity cantilever beam Blast Furnace Top Gas Recovery Turbine Unit (TRT) according to claim 1 and 2 is characterized in that, cantilever beam (a) arrangement form in the siliceous fixed frame (1) is that single layout or a plurality of cantilever array are arranged.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008100101327A CN101257266A (en) | 2008-01-14 | 2008-01-14 | Silicon based piezoelectricity cantilever beam minitype electric generating apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2008100101327A CN101257266A (en) | 2008-01-14 | 2008-01-14 | Silicon based piezoelectricity cantilever beam minitype electric generating apparatus |
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| CN101257266A true CN101257266A (en) | 2008-09-03 |
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| CNA2008100101327A Pending CN101257266A (en) | 2008-01-14 | 2008-01-14 | Silicon based piezoelectricity cantilever beam minitype electric generating apparatus |
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Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013837A (en) * | 2010-12-23 | 2011-04-13 | 南京航空航天大学 | Dandelion-like multi-directional broadband piezoelectric vibration energy collection device |
| CN101590999B (en) * | 2009-06-26 | 2011-05-11 | 中北大学 | Micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect |
| CN101594073B (en) * | 2009-04-21 | 2012-01-04 | 吴速 | System for driving piezoelectric material to generate electricity by using wind energy |
| CN103183304A (en) * | 2011-12-29 | 2013-07-03 | 原相科技股份有限公司 | Micro-electro-mechanical sensing element and manufacturing method thereof |
| CN103346252A (en) * | 2013-07-05 | 2013-10-09 | 重庆大学 | MEMS vibration energy collector based on PZT piezoelectric beam array |
| CN103420326A (en) * | 2013-08-12 | 2013-12-04 | 天津万兆波分科技有限公司 | MEMS (micro-electromechanical systems) piezoelectric energy collecting device and method for manufacturing same |
| CN103523737A (en) * | 2013-10-25 | 2014-01-22 | 黑龙江大学 | MEMS-based interdigital gap beam structure energy collector and manufacturing method thereof |
| CN103580534A (en) * | 2013-10-16 | 2014-02-12 | 浙江工业大学 | Miniature piezoelectric type energy collector based on low-frequency ambient vibration driving |
| CN103594617A (en) * | 2013-11-29 | 2014-02-19 | 上海集成电路研发中心有限公司 | Piezoelectric cantilever sensor and manufacturing method thereof |
| CN103633879A (en) * | 2013-12-13 | 2014-03-12 | 太原理工大学 | Vibration pick-up structure on basis of flexible main beam for vibration energy harvester |
| CN105427913A (en) * | 2015-12-29 | 2016-03-23 | 兰州大学 | Dynamic isotope battery based on PZT and manufacturing method thereof |
| CN105509872A (en) * | 2016-01-06 | 2016-04-20 | 中国科学院声学研究所 | MEMS piezoelectric vector hydrophone and preparation method thereof |
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| CN106160570A (en) * | 2016-02-03 | 2016-11-23 | 浙江大学 | Based on the cantilever beam vibration generating device under tunnel wind environment |
| KR101832566B1 (en) | 2015-11-26 | 2018-02-26 | 삼성전기주식회사 | Piezoelectric shock sensor and manufacturing method thereof |
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| CN107870350A (en) * | 2017-12-13 | 2018-04-03 | 中国地质大学（武汉） | A kind of differential type bimorph geophone core body and piezoelectric seismometer |
| CN108028309A (en) * | 2015-09-29 | 2018-05-11 | 大陆汽车有限公司 | Electronic ceramics component, especially multiple field piezo-activator |
| CN108054952A (en) * | 2017-12-08 | 2018-05-18 | 东南大学 | A kind of piezoelectric-electrcombinedc combinedc vibrational energy collector and preparation method thereof |
| CN108476003A (en) * | 2016-09-06 | 2018-08-31 | 株式会社和广 | generating element |
| CN109217729A (en) * | 2018-10-17 | 2019-01-15 | 大连海事大学 | A kind of miniature self energizing device based on cantilevered MPEG |
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| CN109596208A (en) * | 2017-09-30 | 2019-04-09 | 中国科学院声学研究所 | A kind of MEMS piezoelectric vector hydrophone of U-lag cantilever beam structure and preparation method thereof |
| CN111007442A (en) * | 2019-12-09 | 2020-04-14 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111725385A (en) * | 2020-06-16 | 2020-09-29 | 大连理工大学 | Preparation method of composite PZT piezoelectric film based on sol-gel method and electro-jet deposition method |
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| WO2024087648A1 (en) * | 2022-10-25 | 2024-05-02 | 华为技术有限公司 | Piezoelectric accelerometer, piezoelectric sensor, and smart device |
-
2008
- 2008-01-14 CN CNA2008100101327A patent/CN101257266A/en active Pending
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| CN101594073B (en) * | 2009-04-21 | 2012-01-04 | 吴速 | System for driving piezoelectric material to generate electricity by using wind energy |
| CN101590999B (en) * | 2009-06-26 | 2011-05-11 | 中北大学 | Micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect |
| CN102013837A (en) * | 2010-12-23 | 2011-04-13 | 南京航空航天大学 | Dandelion-like multi-directional broadband piezoelectric vibration energy collection device |
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| CN111725385A (en) * | 2020-06-16 | 2020-09-29 | 大连理工大学 | Preparation method of composite PZT piezoelectric film based on sol-gel method and electro-jet deposition method |
| CN112595393A (en) * | 2020-12-11 | 2021-04-02 | 大连理工大学 | Modal localization micro-mass sensor with different-order modal coupling |
| WO2024087648A1 (en) * | 2022-10-25 | 2024-05-02 | 华为技术有限公司 | Piezoelectric accelerometer, piezoelectric sensor, and smart device |
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