CN101209449A - Method for cleaning back of wafer - Google Patents
Method for cleaning back of wafer Download PDFInfo
- Publication number
- CN101209449A CN101209449A CNA2006101480853A CN200610148085A CN101209449A CN 101209449 A CN101209449 A CN 101209449A CN A2006101480853 A CNA2006101480853 A CN A2006101480853A CN 200610148085 A CN200610148085 A CN 200610148085A CN 101209449 A CN101209449 A CN 101209449A
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- CN
- China
- Prior art keywords
- wafer
- pollutant
- pollutants
- water
- backside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a method for washing crystal backside, wherein, the method comprises the steps that: a. strong oxidizing agent is sprinkled at the surface of the crystal backside and pollutants on the crystal backside is changed into a compound that can be dissolved in water; b. the water is sprinkled at the surface of the crystal backside so as to completely wash the pollutants on the crystal backside. The strong oxidizing agent is the mixed solvent of nitric acid and hydrofluoric acid. The pollutants on the crystal backside are organic compounds. The pollutants on the crystal backside are metal pollutants. Compared with the prior art, the invention first adopts the strong oxidizing agent to change the pollutants on the crystal backside into the compound that can be dissolved in water and then completely wash the pollutants on the crystal backside through sprinkling the water.
Description
Technical field
The present invention relates to semiconductor fabrication process, specifically, relate to a kind of method of cleaning back of wafer.
Background technology
In semiconductor fabrication process, wafer can be reused, so the brilliant back of wafer is easy to be stained with some pollutants, the pollutant of brilliant back may be the organic compound in the processing procedure (chemicals is residual), also may be metal pollutant, as aluminium, copper etc., only adopting water is pollutant can not be washed.
Yet, if these pollutants can not effectively be cleaned up, when wafer enters in the exposure machine of exposure manufacture process, the pollutant of brilliant back can be attracted on the wafer pallet (exposure machine wafer pallet is the vacuum suction pallet) thus the polluting wafer pallet.Like this, when other wafers entered exposure machine, the pollutant projection on the wafer pallet can influence the surface smoothness of wafer in exposure process and measure, thereby caused the subregion focusing of wafer to depart from, and influenced wafer quality and yield.
Summary of the invention
The object of the present invention is to provide a kind of method of cleaning back of wafer, utilize this method the pollutant on crystalline substance back of the body surface can be cleaned up.
For achieving the above object, the invention provides a kind of method of cleaning back of wafer, wherein, this method comprises the steps: that a. sprays strong oxidizer to brilliant back of the body surface, and the pollutant of brilliant back is become water-soluble compound; B. spray water is to the pollutant of brilliant back of the body surface with thorough cleaning back of wafer.
Described strong oxidizer is the mixed solvent of nitric acid and hydrofluoric acid.
The pollutant of described brilliant back is an organic compound.
The pollutant of described brilliant back is a metal pollutant.
Compared with prior art, the present invention at first adopts strong oxidizer that the pollutant of brilliant back is become water-soluble compound, and spray water cleans up the pollutant on crystalline substance back of the body surface up hill and dale again.
The specific embodiment
The method of cleaning back of wafer of the present invention can clean up the surperficial pollutant of the crystalline substance back of the body before wafer enters exposure manufacture process.The pollutant of brilliant back may be the organic compound in the processing procedure (chemicals is residual), also may be metal pollutant, as aluminium, and copper etc.
Method of the present invention specifically comprises the steps: wafer is placed on the pallet of purpose-built washing equipment, and crystalline substance is gone up dorsad, and this pallet can rotate, and has a shower nozzle on the purpose-built washing equipment, and shower nozzle is sprayed at brilliant back of the body surface with cleaning solution.At first spray the crystalline substance back of the body surface of the mixed solvent of nitric acid and hydrofluoric acid to rotation, the organic compound and the metal pollutant of brilliant back can become water-soluble solvent under the effect of strong oxidizer, and then spray water is to the crystalline substance back of the body surface of rotation, thoroughly cleaning back of wafer surface.
In embodiments of the present invention, be that nitric acid and metallics (copper, the aluminium) reaction in the strong oxidizer generates copper nitrate and aluminum nitrate when spraying strong oxidizer removing metal pollutant, thereby thoroughly clean by spray water again.
Claims (4)
1. the method for a cleaning back of wafer is characterized in that, this method comprises the steps:
A. spray strong oxidizer to brilliant back of the body surface, the pollutant of brilliant back is become water-soluble compound;
B. spray water is to the pollutant of brilliant back of the body surface with thorough cleaning back of wafer.
2. the method for cleaning back of wafer as claimed in claim 1, it is characterized in that: described strong oxidizer is the mixed solvent of nitric acid and hydrofluoric acid.
3. the method for cleaning back of wafer as claimed in claim 1, it is characterized in that: the pollutant of described brilliant back is an organic compound.
4. the method for cleaning back of wafer as claimed in claim 1, it is characterized in that: the pollutant of described brilliant back is a metal pollutant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101480853A CN101209449A (en) | 2006-12-27 | 2006-12-27 | Method for cleaning back of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101480853A CN101209449A (en) | 2006-12-27 | 2006-12-27 | Method for cleaning back of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101209449A true CN101209449A (en) | 2008-07-02 |
Family
ID=39609803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101480853A Pending CN101209449A (en) | 2006-12-27 | 2006-12-27 | Method for cleaning back of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101209449A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839060A (en) * | 2012-08-02 | 2012-12-26 | 云南钛业股份有限公司 | Cleaning solution for glass of EB furnace |
| CN106783587A (en) * | 2015-11-24 | 2017-05-31 | 东莞新科技术研究开发有限公司 | The minimizing technology of semiconductor surface metal impurities |
-
2006
- 2006-12-27 CN CNA2006101480853A patent/CN101209449A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839060A (en) * | 2012-08-02 | 2012-12-26 | 云南钛业股份有限公司 | Cleaning solution for glass of EB furnace |
| CN106783587A (en) * | 2015-11-24 | 2017-05-31 | 东莞新科技术研究开发有限公司 | The minimizing technology of semiconductor surface metal impurities |
| CN106783587B (en) * | 2015-11-24 | 2020-07-17 | 东莞新科技术研究开发有限公司 | Method for removing metal impurities on surface of semiconductor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20080702 |