CN101055424A - Integrative type direct-writing photo-etching method - Google Patents
Integrative type direct-writing photo-etching method Download PDFInfo
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- CN101055424A CN101055424A CN 200710022638 CN200710022638A CN101055424A CN 101055424 A CN101055424 A CN 101055424A CN 200710022638 CN200710022638 CN 200710022638 CN 200710022638 A CN200710022638 A CN 200710022638A CN 101055424 A CN101055424 A CN 101055424A
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- 238000001259 photo etching Methods 0.000 title claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
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- 238000001459 lithography Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
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Abstract
The present invention relates to photoetching technique field, concretely is an integrative direct write photolithography method. The method includes determining the target exposal graph, direct write by steps and continuous scan etch three steps; improving the exposal efficiency by using projecting lens with different multiplying power; and gapless jointing the graphs generated by the projecting lens with changed multiplying power by using co-axial optical position detection system. The method of the invention adopts a mixing method of direct scan and minification typesetting, generates smooth graph contour outline and improves efficiency of exposal.
Description
Technical field
The present invention relates to technical field of lithography, specifically, relate on following substrate and print composition, as wafer, printed circuit board (PCB), mask plate, flat-panel monitor, biochip, micromechanics electronic wafer, optical glass flat board.
Background technology
Photoetching technique is to be used for the composition that printing has feature on substrate surface.Such substrate can comprise be used for producing the semiconductor devices, the substrate of multiple integrated circuit, flat-panel screens (for example LCD), circuit board, biochip, micromechanics electronic chip, photoelectron circuit chip etc.Often the substrate that uses is semiconductor wafer or glass substrate.Those skilled in the art will appreciate that the description of this paper, also be applied in other types substrate well known by persons skilled in the art.
In photoetching process, wafer is placed on the wafer station, by being in the exposure device in the lithographic equipment, characteristic composition is projected wafer surface.Although in photoetching process, used projecting optical device, also can use different type exposure devices according to concrete application.The different exposure devices of X ray, ion, electronics or photon photoetching for example, this is well known to those skilled in the art.At this, only for purpose of explanation, the concrete example of photoetching is discussed.
Tradition substep repetition formula that semicon industry uses or substep scan-type lithography tool just are patterned at each disposable projection with carrying of graticule or scan on the wafer field of single exposure formula scanning.Come next field is carried out the exposure process of repeatability then by mobile wafer.Traditional etching system is realized the printing of the accurate characteristic composition of high production volume by repeated exposure type scanning process.
For on wafer, making device, need a plurality of graticules.Owing to the minimizing of characteristic dimension and for the precision tolerance than small-feature-size, these graticules cost for production is very high, and is consuming time very long, thereby makes the conventional wafer photolithographic fabrication cost that utilizes graticule more and more higher, very expensive.
No mask (as directly writing or digital etc.) etching system is looked into the method for graticule with respect to use, and many benefits are provided aspect photoetching.No mask system usage space pattern generator (SLM) replaces graticule.SLM comprises digital micro-mirror system (DMD) or LCD (LCD), and SLM comprises independently addressable and a control cell array, and each pixel can produce the modulation that comprise phase place, gray scale direction or on off state to the light of transmission, reflection or diffraction.
What mask-free photolithography system mainly adopted is following two kinds of methods: one, laser comes straight literary style; Two, the final minification of space diagram generator is set type and is exposed.Wherein, it is the pointwise exposure that laser comes straight literary style, adopts superlaser directly to produce figure on the photaesthesia substrate, and shortcoming is that process velocity is slow, and the single wafer time shutter is long; Second method adopts computer control pattern generator (SLM), and subject matter is that resolution is lower, and is subjected to the shape of unit pixel and the effectively restriction of clear aperature (fill-in factor), is difficult to make smooth graph outline continuously.
Summary of the invention:
The invention provides a kind of method that the photaesthesia substrate is carried out the composition photoetching, promptly adopt the mixed light carving method of the multiple step format exposure of the final minification composing of directly writing continous way scanning and different multiplying, realize producing smooth graph outline, and improve the efficient of exposing.
Concrete method of operating comprises the steps:
Integrative type direct-writing photo-etching method comprises following operation steps:
(1), at first, on the light sensor that places on the precise mobile platform, generate target exposure pattern with feature relevant with the expectation figure,
(2), substep direct-write photoetching
Projection lens from low enlargement ratio carries out space orientation and focusing to target exposure pattern, determines first exposure figure in the target exposure pattern, and exposes;
With the projection lens of high enlargement ratio, target exposure pattern is carried out space orientation and focusing again, determine second exposure figure in the target exposure pattern, be connected with first exposure figure, expose again to guarantee second exposure figure;
With the projection lens of higher enlargement ratio, target exposure pattern is carried out space orientation and focusing again, determine the 3rd exposure figure in the target exposure pattern, be connected with second exposure figure, expose again to guarantee the 3rd exposure figure;
Continue aforesaid operations, up to except that the target exposure pattern profile, all expose in other space;
(3), continuous sweep photoetching
Profile to target exposure pattern carries out the continous way scan exposure, seamless connection between the graph outline of formation smooth edge;
Fine structure to target exposure pattern is carried out the continous way scan exposure, forms the fine structure figure of smooth connection.
The inventive method adopts the projection lens of different multiplying, improves the efficient of exposure; And adopt coaxial optical alignment detection system, reach the figure that the projection lens of the multiplying power of change produces and can carry out seamless connectivity.The inventive method adopts the mixing method of directly writing scanning and final minification composing, realizes producing smooth graph outline, and improves the efficient of exposure.
Adopt space diagram generator (SLM) during the inventive method operation, the light source of illumination pattern generator, projection optical system with the image projection of the pattern generator variable power camera lens to the substrate, the precise mobile platform of mobile photaesthesia substrate, one cover comprises the optical alignment detection system of lighting source, optical splitters, photaesthesia detector and the computer control system of control various piece.Pattern generator comprises the element that can switch separately of at least one array, is produced the composition of feature by computer control.Pattern generator can be diffraction or transmission or reflection device.Radiation source can be a continuous light source, as lonely light modulation, LED or continuous laser, also can use pulse modulated LED or quasi-continuous lasing in pulsed frequency during far above the switching frequency of the element of pattern generator.The characteristic composition that pattern generator produces is projected on the photaesthesia substrate with certain final minification ratio (M) by optical projection system, and the change of final minification ratio is realized by the projecting lens of using different multiplying instead.Final minification ratio M can be greater than 1 (M＞1), also can be less than 1 (M＜=1), by the characteristic dimension and the decision of printed dimensions size of practical application.In a preferred embodiment, we have described the application of final minification ratio M＜1, but those skilled in the art understands, and similarly application can use the situation of M＞1.Moving of photaesthesia substrate can realize on three, four or six space precise mobile platform.Projection optical system adopts the fortune core structure.
In a preferred embodiment, projection optical system is projected in the figure of pattern generator on the light sensor at a certain time interval, light sensor moves between the graphic projection interval, the figure of pattern generator is switching simultaneously, makes the composition of projection once more and the composition of last time projection constitute in succession seamless.
In a preferred embodiment, pattern generator is shone continuously, and projection optical system is projected in characteristic composition on the light sensor continuously, and light sensor moves on precise mobile platform continuously, produces the smooth composition of continuous exposure.
In a preferred embodiment, pattern generator is by the combination of aforementioned two kinds of radiation modalities, compartment of terrain and projecting to continuously on the light sensor respectively, and projection optical system selects for use different final minification multiplying powers to carry out graphic projection therebetween, with the minimizing time shutter, and produce smooth profile continuously.
Description of drawings
Fig. 1 is the inventive method photoetching Z word synoptic diagram,
Fig. 2 determines the target exposure pattern synoptic diagram for adopting the inventive method photoetching quadrilateral first step,
Fig. 3 determines first exposure figure synoptic diagram for adopting second step of the inventive method photoetching quadrilateral,
Fig. 4 determines second exposure figure synoptic diagram for adopting second step of the inventive method photoetching quadrilateral,
Fig. 5 carries out the synoptic diagram of continous way scan exposure for adopting the 3rd step of the inventive method photoetching quadrilateral to the profile of target exposure pattern.
Embodiment
Below in conjunction with accompanying drawing, the present invention is done to describe further by embodiment.
Embodiment 1:
Referring to Fig. 1, adopt the inventive method photoetching Z word,
(1), at first, generation has the zigzag target exposure pattern on the light sensor that places on the precise mobile platform.The hypothesis space pattern generator have 16 * 12 can independent conversion pixel, suppose the target Z word figure that will produce one set the goal the space size at place under the situation of projection lens of enlargement ratio corresponding to the general layout of space diagram generator shown in Fig. 1 (a).
(2), substep direct-write photoetching
Under the situation of the projection lens of target enlargement ratio, target exposure pattern is carried out space orientation and focusing, determine first exposure figure in the target exposure pattern, shown in Fig. 1 (b), and expose; Obtaining except that the target exposure pattern profile, all exposes in other space;
(3), continuous sweep photoetching
Profile to the zigzag target exposure pattern carries out the continous way scan exposure, and seamless connection between the graph outline of formation smooth edge is shown in Fig. 1 (c).
Embodiment 2:
Adopt the inventive method photoetching quadrilateral.
Fig. 2, Fig. 3, Fig. 4 and Fig. 5 schematically show the method for the quadrilateral exposure pattern that the comprehensive direct writing technology with multiple step format and continous way according to the present invention produces.
(1), the hypothesis space pattern generator have 4 * 4 can independent conversion pixel, the space size at the targeted graphical place that produce is corresponding to the general layout of the space diagram generator of 16 * 24 final resolution projections, as Fig. 2.
(2), substep direct-write photoetching
Hypothesis has the enlargement ratio of final resolution as Fig. 3, Fig. 4 and shown in Figure 5 again, and finally two groups of projection lens of 1/2nd enlargement ratio of resolution are optional.In the practice, one skilled in the art should appreciate that the projection lens of the various different enlargement ratios that two or more can be arranged is optional.In Fig. 3, Fig. 4 and embodiment shown in Figure 5, finally the projection lens of 1/2nd of resolution enlargement ratio produces the space diagram of 8 * 8 final resolution pixels, as shown in Figure 3, the operations according to the instant invention flow process, the target exposure pattern layout that the pattern generator of equivalence shown in Figure 2 produces, can be decomposed into a plurality of different enlargement ratio corresponding exposure pattern layouts by two enlargement ratios among the embodiment, as Fig. 3, Fig. 4 and shown in Figure 5;
The projection lens of the enlargement ratio since 1/2nd with the projection lens of low enlargement ratio, carries out space orientation and focusing to target exposure pattern earlier, determines first exposure figure in the target exposure pattern, as shown in Figure 3, and exposes;
Again with the projection lens of high enlargement ratio, target exposure pattern is carried out space orientation and focusing, determine second exposure figure in the target exposure pattern, be connected with first exposure figure to guarantee second exposure figure, exposure figure as shown in Figure 4 exposes again;
At last, utilize the projection lens of high enlargement ratio, wafer is carried out space orientation and focusing, accurately be connected with the exposure figure of front to guarantee new exposure figure.Carry out the profile scan exposure of continous way according to exposure figure shown in Figure 5, seamless connection between the graph outline of formation smooth edge, fine structure to the exposure figure of front is carried out the continous way scan exposure, forms the fine structure figure of smooth connection, and obtains high exposure efficiency.
Claims (1)
1, integrative type direct-writing photo-etching method is characterized in that comprising following operation steps:
(1), at first, on the light sensor that places on the precise mobile platform, generate target exposure pattern with feature relevant with the expectation figure,
(2), substep direct-write photoetching
Projection lens from low enlargement ratio carries out space orientation and focusing to target exposure pattern, determines first exposure figure in the target exposure pattern, and exposes;
With the projection lens of high enlargement ratio, target exposure pattern is carried out space orientation and focusing again, determine second exposure figure in the target exposure pattern, be connected with first exposure figure, expose again to guarantee second exposure figure;
With the projection lens of higher enlargement ratio, target exposure pattern is carried out space orientation and focusing again, determine the 3rd exposure figure in the target exposure pattern, be connected with second exposure figure, expose again to guarantee the 3rd exposure figure;
Continue aforesaid operations, up to except that the target exposure pattern profile, all expose in other space;
(3), continuous sweep photoetching
Profile to target exposure pattern carries out the continous way scan exposure, seamless connection between the graph outline of formation smooth edge;
Fine structure to target exposure pattern is carried out the continous way scan exposure, forms the fine structure figure of smooth connection.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100226385A CN100561356C (en) | 2007-05-23 | 2007-05-23 | Integrative type direct-writing photo-etching method |
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| CNB2007100226385A CN100561356C (en) | 2007-05-23 | 2007-05-23 | Integrative type direct-writing photo-etching method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923289A (en) * | 2009-05-21 | 2010-12-22 | 台湾积体电路制造股份有限公司 | The monitoring electron beam covers and provides the method and system of Advanced process control |
| CN104298077A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | DMD action method for rolling grayscale lithography |
| WO2021120906A1 (en) * | 2019-12-17 | 2021-06-24 | 苏州苏大维格科技集团股份有限公司 | Direct-write photoetching system and direct-write photoetching method |
-
2007
- 2007-05-23 CN CNB2007100226385A patent/CN100561356C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923289A (en) * | 2009-05-21 | 2010-12-22 | 台湾积体电路制造股份有限公司 | The monitoring electron beam covers and provides the method and system of Advanced process control |
| CN101923289B (en) * | 2009-05-21 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Method and system of monitoring e-beam overlay and providing advanced process control |
| CN104298077A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | DMD action method for rolling grayscale lithography |
| WO2021120906A1 (en) * | 2019-12-17 | 2021-06-24 | 苏州苏大维格科技集团股份有限公司 | Direct-write photoetching system and direct-write photoetching method |
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| CN100561356C (en) | 2009-11-18 |
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Address after: 230601 North of Jinxiu Avenue and East of Xiyou Road, Hefei Economic and Technological Development Zone, Anhui Province Patentee after: HEFEI ADVANTOOLS SEMICONDUCTOR Co.,Ltd. Address before: 230001, two floor, country garden club, Hefei economic and Technological Development Zone, Anhui Patentee before: ADVANTOOLS HEFEI Co.,Ltd. |
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