CN100546005C - Plasma generating equipment, plasma control method and manufacture of substrates - Google Patents
Plasma generating equipment, plasma control method and manufacture of substrates Download PDFInfo
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- CN100546005C CN100546005C CNB2007101624040A CN200710162404A CN100546005C CN 100546005 C CN100546005 C CN 100546005C CN B2007101624040 A CNB2007101624040 A CN B2007101624040A CN 200710162404 A CN200710162404 A CN 200710162404A CN 100546005 C CN100546005 C CN 100546005C
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Abstract
The object of the present invention is to provide a kind of plasma generating equipment that can evenly generate high-density plasma in the space, sidewall at vacuum tank (11) is provided with a plurality of antennas (16), relative 3-4 antenna (16) is through tabular conductor (19) 1 high frequency electric source that is connected in parallel.The conductor length of each antenna (16) is 1/4 also shorter than the wavelength of the induced electricity magnetic wave that generates in vacuum tank.By the length of setting antenna conductor like this, can prevent to produce standing wave, can prevent to damage the uniformity of the plasma of vacuum tank thus.In addition, because by using efficiently heat release of tabular conductor (19), so can suppress the rising of impedance.
Description
The application is that application number is 2003801061178, the applying date is dividing an application of December 12, denomination of invention in 2003 application for a patent for invention that is plasma generating equipment, plasma control method and manufacture of substrates.
Technical field
The present invention relates to a kind of plasma generating equipment, be used to use plasma, processing or etch processes are piled up in the surface of processed substrate and make substrates such as semiconductor.Especially relate to a kind of by making plasma in large tracts of land, evenly produce, make the technology of large-area substrates.
Background technology
In recent years, can show that more multi-crystal TFT-the LCD of high-brghtness picture images is noticeable than TFT (the thin-film transistor)-LCD that uses amorphous silicon film.Multi-crystal TFT-LCD at first is manufactured on the polycrystalline silicon substrate that is formed with polysilicon membrane on the glass substrate.This polycrystalline silicon substrate is distinguished into the pixel area of a plurality of two-dimensional arrangements, in each pixel area, forms thin-film transistor (TFT), constitute the LCD substrate.In order to make large-area multi-crystal TFT-LCD, need have high-quality, the polycrystalline silicon substrate of high flatness particularly.
Polycrystalline silicon substrate is also noticeable as high efficiency substrate for solar cell, and the expansion along with demand and application requires its large tracts of landization.In addition, even if with regard to general semiconductor device substrate, the large-scale semiconductor device substrate that surpasses the monocrystalline size also must use piles up the substrate that forms.
In order to be manufactured on the substrate that uses in these fields, carry out the processing of using plasma.In the processing of using plasma, comprise the raw material that makes substrate and be piled up in the processing on the processed substrate surface that constitutes substrate and the processing of the processed substrate surface of etching etc.Along with the maximization of substrate, the device of carrying out plasma treatment also needs to maximize, but greatest problem at this moment is the inhomogeneities of plasma treatment.In order to eliminate this problem, need make plasma density in the whole base plate surface, become even as far as possible.On the other hand,, require to improve plasma density, improve stackeding speed or etch-rate thus from productive viewpoint.
In the method that generates plasma, ECR (electron cyclotron resonance) plasma mode, microwave plasma mode, induction coupled mode plasma mode, capacitive coupling plasma mode etc. are arranged.Wherein, induction coupled mode plasma mode applies high frequency voltage to the induction coil that constitutes antenna, and at the inner generation of plasma generating equipment induction field, and generate plasma thus.Constitute according to this, can generate high-density plasma as one of important document that requires described plasma device.On the other hand, because plasma density depends on the distance apart from antenna, so with regard to regard to the uniformity of the described plasma density of an important document again, formations such as shape by making antenna or position realize improving.For example, open in the 2000-58297 communique (below be made as ' patent documentation 1 '), put down in writing from being arranged on the tabular coil that plasma generates the courtyard outside of chamber and imported high frequency, make the uniformity raising of plasma density the spy.
With regard to this formation, if realize the large tracts of landization of substrate, then generate the mechanical strength of chamber courtyard in order to ensure plasma, must make the wall of courtyard enough thick.But, in the device of patent documentation 1,,, wall decays from the induction field of antenna radiation so making owing to the outside configuration antenna that generates the chamber at plasma, be difficult to fully obtain the intensity that plasma generates indoor induction field.That is, in patent documentation 1, in the method for record,, be difficult to fully improve plasma density although with regard to the uniformity of plasma density, see certain raising.
On the contrary, the present application people opens in the 2001-35697 communique (' patent documentation 2 ') the spy, proposes that high frequency antenna is arranged on plasma generates chamber interior, and a plurality of antennas are set, and the antenna that uses non-helical shaped.
Constitute according to this, do not constitute obstacle, generated indoorly, can fully improve plasma density so induction field emits to plasma unattenuatedly because plasma generates the wall of chamber.In addition, because radiate induction fields,, thus, the uniformity of plasma density is improved so its uniformity improves from a plurality of antennas of equivalent arrangements.Moreover though inside antenna is easy to generate paradoxical discharge when applying big voltage, by a plurality of antennas are set, the impedance of each antenna diminishes, and can not produce paradoxical discharge.Use the antenna of non-helical shaped also can help to reduce the impedance of antenna, suppress paradoxical discharge.By these effects, can carry out to pile up to large-area processed substrate and handle or etch processes.Below, the formation of putting down in writing in the patent documentation 2 that a plurality of antennas are set is called ' many antennas mode '.
In order to handle more large-area substrate, require when fully guaranteeing plasma density intensity, to generate the higher plasmoid of uniformity from now on.For this reason, even if described many antennas mode also needs to study the relation between the shape, position of each antenna etc. or antenna etc., the current parameter of not considering.In addition, if form, then damage the uniformity of plasma thus from the standing wave of the induction field of antenna radiation.And, because the intensity of induction field depends on the distance apart from high frequency antenna, so even if use many antennas mode, near the plasma density the substrate center is near than the substrate outer edge low also.Under the little situation of substrate area, near the difference of the plasma density that near the substrate center and substrate outer edge is is in allowed band, but big if substrate area becomes, then this difference can not be ignored.In addition, etching or stackeding speed etc. are different because of the difference of ion species or free radical kind, so also need to consider the ion species that generates or the kind of free radical kind.
Summary of the invention
The present invention makes in order to address this is that, and its purpose is to provide a kind of plasma generating equipment that can spatially evenly generate the kind of high-density plasma, the ion species that can suppress to generate or free radical kind.
The present invention's who constitutes in order to address the above problem plasma generating equipment is characterised in that: possess
A) vacuum tank;
B) be arranged on the substrate platform that described vacuum tank is interior, load processed substrate; With
C) in described vacuum tank, be arranged in a plurality of high frequency antennas on the described substrate platform almost parallel.
In addition, plasma generating equipment of the present invention is except that above-mentioned formation, and also arbitrary or a plurality of formation in following (1)-(5) is had both in expectation.
(1) described antenna is made of the conductor also shorter than 1/4 wavelength length of described high frequency.
(2) has the tabular conductor that is connected in parallel on described a plurality of antenna.In addition, to the tie point of the power supply of antenna power supply and tabular conductor, also shorter than 1/4 wavelength length of high frequency with the distance of each antenna and the tie point of tabular conductor.
(3) will set value for corresponding to the aspect ratio of the antenna of the position in the purpose zone of described substrate platform corresponding to purpose plasma density in this purpose zone or plasma electron energy.Here, so-called ' aspect ratio ' is meant with the direction length that is parallel to inwall divided by the value of antenna after perpendicular to the direction length of inwall.
(4) be roughly parallel to the be arranged side by side electrode of antenna of described substrate platform, 1 group or many groups are same polarity in abutting connection with the adjacent electrode of antenna each other.
(5) on described antenna, connect impedance component, expect that this impedor impedance is variable.
The basic comprising of plasma generating equipment of the present invention at first, is described.Plasma generating equipment of the present invention has its inner vacuum tank that constitutes plasma generation chamber.Vacuum tank inside maintains the specified vacuum degree by vacuum pump.The substrate platform that loads processed substrate is set in this vacuum tank inside.
A plurality of high frequency antennas are set in vacuum tank.An electrode of these antenna is connected on the power supply of other setting another electrode grounding.This antenna for example can be assemblied on the sidewall of vacuum tank or day borehole wall etc.In addition, be roughly parallel to the substrate tableland and arrange these a plurality of antennas.
If provide high frequency power to these antenna, then, generate plasma thus from each antenna radiation induction field from power supply.At this moment, arrange antenna because in device of the present invention, be roughly parallel to the substrate tableland, thus each day line-spacing substrate platform height about equally, in the space, concentrate the energy that drops into from antenna, so can generate high-density plasma.
In addition, by using plane antenna, drop into energy,, can generate more highdensity plasma so compare with the situation of the antenna that uses three-dimensional shape from antenna in plane regional centralized.
If in vacuum tank, then antenna surface is exposed to the plasma of generation with the conductor arrangement of antenna, conductor worsens.In order to prevent the generation of this situation, expectation comes the cover antenna surface with insulator.The Electrostatic Coupling of the conductor and the plasma of suppressing antenna is gone back in this covering, thus, also has the effect that prevents paradoxical discharge or plasma disorder.This covers by write up in above-mentioned patent documentation 2.
Below, the plasma generating equipment of the formation with above-mentioned (1) is described.In this device, make the conductor length that constitutes antenna also shorter than 1/4 wavelength length of the high frequency power that provides.Conductor is not limited to wire, even if for example be tabular, as long as the length of direction of current flow is also lacked than 1/4 of high frequency wavelength.By constituting this formation, can prevent to produce standing wave, thereby can prevent to damage the uniformity of the plasma in the vacuum tank at conductive surface.
Below, the plasma generating equipment of the formation with above-mentioned (2) is described.In above-mentioned basic comprising, a plurality of antennas are connected in parallel on the tabular conductor.Provide high frequency power from power supply to antenna through this tabular conductor.In order efficiently to provide high frequency power, the impedance of the connecting portion between power supply and antenna is diminished to antenna.In connecting, use tabular conductor, fully widen the width of this tabular conductor, the impedance of this connecting portion can be suppressed little at this.In addition, if the conductor temperature of connecting portion rises because of power supply, then resistance increases, but by using tabular conductor, efficiently heat release is so can suppress the rising of impedance.
In addition, in the formation of (2), if between the tie point of the power supply of antenna power supply and tabular conductor, two tie points, producing standing wave with the tie point of each antenna and tabular conductor, then, restricted the size of putting into the high frequency power on the tabular conductor at the tie point place of power supply and tabular conductor by this standing wave.Therefore,, prevent from tabular conductor, to produce standing wave, can drop into the high frequency power of regulation by making the distance between two tie points also shorter than 1/4 wavelength length of high frequency.In addition, expectation makes between the length of antenna conductor and described two tie points also shorter than 1/4 wavelength length of high frequency power apart from sum.
Below, the plasma generating equipment of the formation with above-mentioned (3) is described.In this constitutes, the aspect ratio of the antenna of not considering before being conceived to.The present application people finds that the plasma electron energy or the plasma density in this antenna direction zone (be positioned at from antenna department of assembly perpendicular to the zone on the direction of inwall) depend on aspect ratio.For example, be added under the constant situation of high frequency voltage on the antenna at facility, aspect ratio is big more, and then the plasma electron energy in this antenna direction zone is high more.It is the reasons are as follows.If increase aspect ratio, it is big that the induction field that then produces on the antenna direction direction becomes.Quicken soon to assigned direction because of this potential difference makes the plasma electron that generates near antenna, uprise so be positioned at the plasma electron energy in the zone on this direction.
Impact different and different because of plasma electron energy size of ion species that the back generates or free radical kind with plasma electron in this zone.In addition, etch-rate etc. is different because of the difference of ion species or free radical kind.Therefore, the aspect ratio of the antenna in the zone (purpose zone) by will pointing to control etch-rate etc. is set various values for, and the energy of scalable plasma electron is controlled at the ion species or the free radical kind that generate in the purpose zone, control etch-rate wherein etc.
In the device of formation, the whole electron temperature in the vacuum tank can be remained on the control that low state is carried out electron energy unchangeably with above-mentioned (3).Therefore, the current potential of crust (sheath) part that is helpless to etching or accumulation is risen, only control the electron energy in purpose zone.
In addition, by increasing aspect ratio, plasma electron that is accelerated and the residual molecular raw material gas impact not by plasmaization further promote the generation of plasma.Thus, can improve the plasma density in purpose zone.
In addition, aspect ratio in plane antennas such as rectangle or circle as mentioned above by defining divided by the value of antenna after perpendicular to the direction length of inwall with the direction length that is parallel to inwall, but in having the antenna of three-dimensional shape, by with the direction length that is parallel to inwall divided by to the face projection that is parallel to the substrate platform, define perpendicular to the value after the direction length of inwall.
Below, for the device of formation with (3), the example of description control plasma electron energy or plasma density.Set the aspect ratio of specifying this regional antenna corresponding to purpose values such as plasma electron energy in the purpose zone or plasma densitys.For example, in improving vacuum tank, under the situation of whole plasma density, need only the aspect ratio that increases whole antennas.In addition, in improving vacuum tank, under the situation of the plasma electron energy of regional area or plasma density, make the aspect ratio of the antenna that points to the purpose zone bigger than the aspect ratio of other antenna.In addition, not only can adjust an antenna, also can adjust the aspect ratio of a plurality of antennas.In addition, in order to reduce the plasma electron energy or the plasma density of regional area in the vacuum tank, also can make the aspect ratio of pointing to this regional antenna littler than the aspect ratio of other antenna.Thus, can the higher degree of freedom control plasma electron energy or plasma density.
Improving the preferred example of the plasma density of regional area in the vacuum tank, is the method that is used to improve the plasma density of the device ionic medium volume density of the existing many antennas mode substrate platform central authorities near zone lower than the outer edge.By making the aspect ratio of pointing near the antenna of central authorities bigger, can improve the uniformity that plasma generates the whole ionic medium volume density in chamber than the aspect ratio of other antenna.Like this, the plasma that has improved density uniformity by use comes processed substrate is carried out accumulation processing or etch processes, can be manufactured on the high substrate of uniformity in the large tracts of land.
The method of the plasma density of regional area in the so-called control vacuum tank, for example can be used for not producing the substrate of uneven part, control the plasma density of this part and revise, make stackeding speed or the different situation of etching speed and other parts knowing what reason.
Below, the plasma generating equipment of the formation with above-mentioned (4) is described.With above-mentioned the same, when in vacuum tank, a plurality of antenna being set, be roughly parallel to the be arranged side by side electrode of antenna of substrate platform, be made as same polarity each other in abutting connection with the adjacent electrode of antenna.That is, all be connected in adjacent electrode on the high frequency electric source or ground connection all.
For example, be provided with a plurality ofly high frequency electric source is connected on the electrode, with the antenna of another electrode grounding, connect under the parallel unchangeably mobile situation, in abutting connection with the polarity difference between the adjacent electrode of antenna to comprise these.On the contrary, a plurality of antennas are set so that antenna self parallelly moves, high frequency electric source and ground connection be connected with the situation opposite in abutting connection with antenna under, become identical polar each other in abutting connection with the adjacent electrode of antenna.
If in abutting connection with the polarity difference of the adjacent electrode of antenna, then when in order to generate induction field when each antenna applies high frequency voltage, by mistake between adjacent electrode, apply high frequency voltage, only this part local plasma density uprises.The plasma density step-down at the position beyond therefore, for example between substrate platform central portion etc., this adjacent electrode.On the contrary,, be identical polar each other, so when each antenna applies high frequency voltage, yet equal potentials always between this adjacent electrode does not apply high frequency voltage because establish in abutting connection with the adjacent electrode of antenna according to the formation of above-mentioned (4).Therefore, between this adjacent electrode, can not form local high beta plasma density area, the homogenizing plasma density.In addition,, the density that is provided with of antenna is uprised with worsening, plasma density is uprised so can be used as integral body owing to can not make narrow down distance in abutting connection with between antenna of the uniformity of plasma density.Moreover, make the identical electrode of polarity, the distribution of may command plasma density by suitable selection.
Below, the plasma generating equipment of the formation with above-mentioned (5) is described.In this constitutes, on each antenna, connect the impedance component that is used to regulate aerial voltage or electric current.When each antenna is connected in high frequency electric source, typically, since the reason on the cost etc., a plurality of antennas that on each high frequency electric source, are connected in parallel, but also can on an antenna, connect a high frequency electric source.
Providing to a plurality of antennas under the situation of high frequency power from a high frequency electric source, high frequency electric source is different with shape or the length or the Temperature Distribution etc. of the conductor of antenna along with connecting, and the high frequency power that offers each antenna is also different to each antenna.At described connection conductor is under the situation of tabular conductor, and especially Effect on Temperature Distribution becomes significantly.Therefore, in plasma generating equipment of the present invention, by regulating each impedor resistance value, the difference that offers the high frequency power of each antenna diminishes.The uniformity of the plasma density that generates in vacuum tank thus, improves.
For example, using described tabular conductor a plurality of antennas to be connected in parallel under the situation on the high frequency electric source, because from the exothermic heat on surface, the temperature of tabular conductor is low near than central authorities near the end.Therefore, be connected near the tabular end conductor antenna and the resistance value between high frequency electric source than being connected in little between near the antenna-high frequency electric source of central authorities.Therefore, increase the impedor resistance value that is connected near the antenna of tabular end conductor.Thus, the difference of the resistance value between each antenna-high frequency electric source diminishes, but normalization offers the high frequency power of each antenna.
In addition, under the plasma density of the subregion in vacuum area thereby the situation that rises or descend former,, can make this regional plasma density near other regional value by regulating the resistance value of the impedance component that points to this regional antenna because of certain.This is not limited to a plurality of antennas are connected in parallel in a situation on the high frequency electric source, also applicable to only an antenna being connected in a situation on the high frequency electric source.
Also can only on the part antenna, connect voltage or the electric current that impedance component is regulated this antenna.For example, in the part antenna in a plurality of antennas impedance component ground is not set maximum power is provided all the time, and other antenna is provided with impedance component, and regulate its value, thus the restriction power supply.
In the impedance component on being connected in antenna, can use fixing and variable any of resistance value.The blocked impedance element is for example known the resistance value between each antenna and high frequency electric source in advance, has under the situation of reproducibility to use in this value.On the other hand, variable impedance element also can be used for resistance value between antenna-high frequency electric source and is condition such as condition of unknown, Yin Wendu and in the different situations, the situation that the time changes etc. except that above-mentioned situation.By regulate the resistance value of variable impedance element corresponding to the variation of various conditions and they, the plasma density of generation is become evenly.
The adjusting expectation of the resistance value of this variable impedance element is carried out after monitoring the plasmoid of vacuum tank inside and feeding back this state.Thus, can be along with the variations in temperature of tabular conductor comes to change corresponding to the time of plasma density.For this reason, be desirably in also be provided with in the plasma generating equipment of the present invention mensuration can represent plasmoid parameter determination part and set the control part of the resistance value of each variable impedance element according to this parameter.Though determination part as long as directly measure plasma density, also can come the plasma density of indirect determination generation by the curtage of measuring easier each antenna.
The for example following formation of determination part.By near antenna, disposing pick-up winding, be determined at the induced electromotive force of responding in this pick-up winding, can measure the electric current of each antenna easily.In addition,, measure and flow out the electric current that flows into this capacitor, can measure the voltage of each antenna easily by near antenna, disposing capacitor.By making the end conductor that constitutes antenna be projected into the outside of vacuum tank, can with pick-up winding or capacitor arrangements near its end, be the outside of vacuum tank.Thus, can make pick-up winding or capacitor not corroded the curtage that antenna is measured on ground by plasma.
Because the plasma density that generates is directly proportional with the power that drops into antenna,, expects its both sides of mensuration, promptly drop into the power of antenna so, compare with curtage one side who only measures antenna in order more correctly to measure plasma density.For this reason, as long as the signal of the antenna current that will obtain by said method and the signal multiplication of aerial voltage.This multiplication for example can use the signal synthesizer (frequency mixer) that synthesizes both to carry out.Because comprise high fdrequency component in the signal that signal synthesizer obtains, so expectation removes high fdrequency component by low pass filter.The signal that so obtains is directly proportional with the power that drops into antenna.
Even if above-describedly respectively constitute any, also expect many strip antennas are divided into separately by 1 or a plurality of groups of constituting of a plurality of antenna, with regard to each group, to each day line parallel high frequency power is provided.By being made as this formation, and compare to whole antennas power supplies from a high frequency electric source, further reduce load to high frequency electric source, thus, can improve the plasma density of generation.
In addition, because can realize than also uniform highdensity plasmoid in the past by above-mentioned each plasma generating equipment that constitutes, so pile up processing or etch processes, the comparable substrate that has an even surface of making efficiently in the past by using this device to carry out.
Description of drawings
Fig. 1 is the sectional view of vertical direction of the 1st embodiment of plasma generating equipment of the present invention.
Fig. 2 is the side view of the plasma generating equipment of the 1st embodiment.
Fig. 3 is the plane graph of the plasma generating equipment of the 1st embodiment.
Fig. 4 is the curve of the plasma generating equipment plasmoid that measure, the vacuum tank central part of expression the 1st embodiment.
Fig. 5 is the figure of the plasma generating equipment of expression the 1st embodiment plasma density distribution that measure, that vacuum tank is interior.
Fig. 6 is the signal pie graph that expression has the plasma generating equipment example of phase position adjusting function.
The change curve of the plasma density when Fig. 7 is the phase difference variation of representing to make between high frequency electric source.
Fig. 8 is the plane graph of the length of sidewall direction of the expression antenna conductor plasma generating equipment example different with the antenna number.
Fig. 9 is that expression is because of the different plasma potentials that cause with the antenna number of length of the sidewall direction of antenna conductor and the different curve of amplitude of floating potential.
Figure 10 is the plane graph of the 2nd embodiment of plasma generating equipment of the present invention.
Figure 11 is the ideograph of the different multiple antenna of expression aspect ratio.
Figure 12 is the curve of plasma density of vacuum tank central authorities of the plasma generating equipment of expression the 2nd embodiment and comparative example.
Figure 13 is the curve of Electron energy distribution of vacuum tank central authorities of the plasma generating equipment of expression the 2nd embodiment and comparative example.
Figure 14 is the plane graph that expression is made as the aspect ratio of each antenna different plasma generating equipments one example.
Figure 15 is the figure of plasma density distribution of the device of the expression plasma generating equipment of Figure 14 and comparative example.
Figure 16 is the plane graph of the 3rd embodiment of plasma generating equipment of the present invention.
Figure 17 is the key diagram that differs from gap between antenna and output therebetween.
Figure 18 is the curve of plasma density of vacuum tank central authorities of the plasma generating equipment of expression the 3rd embodiment and comparative example.
Figure 19 is the curve of expression by the plasma density spatial distribution of the plasma generating equipment generation of the 3rd embodiment and comparative example.
Figure 20 is the plane graph of the 4th embodiment of plasma generating equipment of the present invention.
Figure 21 is the figure of expression impedance component one example.
Figure 22 is the sectional view of vertical direction of the plasma generating equipment of the 4th embodiment.
Figure 23 is the figure of expression diode bridge connection circuit one example.
Figure 24 is the curve of expression by the spatial distribution of the plasma density of the generating apparatus generation of the 4th embodiment.
Embodiment
(the 1st embodiment)
The sectional view of the vertical direction of the 1st embodiment of plasma generating equipment of the present invention shown in Figure 1 respectively illustrates the side view of this device, the plane graph of this device shown in Figure 3 at Fig. 2.
The plasma that the inside of vacuum tank 11 constitutes this plasma generating apparatus generates the chamber.Vacuum tank 11 inside as shown in Figure 3, flat shape is rectangle (rectangle), its long edge lengths is 130mm, bond length is 100mm.On vacuum tank 11, connect vacuum pump (not shown), with vacuum tank 11 inner sustain at the specified vacuum degree.In vacuum tank 11, be provided for loading processed substrate 13, long limit is that 94cm, minor face are the substrate platform 14 of the rectangle plane shape of 76cm.Substrate platform 14 is by being arranged on the lifting unit 14a liftable of its underpart.In addition, be provided for deriving the substrate gateway 12 that imports processed substrate 13 in the following side of vacuum tank 11.
Be provided with along inwall level in vacuum tank 11 the spiral portion of spiraling in a week and the gas pipeline 15 that constitutes by the connecting portion that is connected in vacuum tank 11 outsides at vacuum tank 11 internal upper parts.For the impartial gas that imports in vacuum tank 11, a plurality of holes of configuration suitably distribute on the surface of the portion of spiraling of this gas pipeline 15.In addition, also can replace this gas pipeline 15 of present embodiment, be provided with and run through the vacuum tank sidewall or/and the pipeline of the weak point of day borehole wall in vacuum tank 11 inside turns.At this moment, for the impartial gas that imports in vacuum tank 11, be desirably in sidewall or/and a plurality of pipelines of configuration that suitably distribute on day borehole wall.
In 4 sidewalls of vacuum tank 11, on its horizontal direction, in two faces of a long side 4 high frequency antennas 16 are set respectively equally spaced, in two faces of a short side, 3 high frequency antennas 16 (with reference to Fig. 3) are set respectively equally spaced.Arbitrary antenna 16 all is 180mm apart from the height of substrate platform 14.As described later, one in two electrodes of each antenna 16 is connected on the high frequency electric source 18, with another ground connection.For example, the ground connection lateral electrode of each antenna is connected on the sidewall of vacuum tank 11, by with this sidewall ground connection, can be with ground connection lateral electrode ground connection.In addition, also can in the electrode of high frequency electric source 18 sides, insert from the swim fixing or variable floating capacitance of (floating) of ground connection.In the present embodiment, the frequency of the power that provides from high frequency electric source 18 is 13.56MHz.
Conductor length is 450mm between the electrode of antenna 16, than put on high frequency wavelength on the antenna 16 (10,000-15,000mm) 1/4 also short.Thus, can not produce standing wave and damage the uniformity of plasma.
The surperficial insulated body that is positioned at the part of vacuum tank 11 in the conductor of antenna 16 covers.In addition, high frequency antenna 16 be shaped as the U font, like this by using the antenna that does not spiral to reduce the impedance of antenna.With regard to antenna that insulated body covered described here and the antenna that do not spiral, in patent documentation 2, describe in detail.
In the present embodiment, be arranged on 3 or 4 antennas on the vacuum tank sidewall being connected in parallel on the high frequency electric source 18.In being connected of each antenna 16 and high frequency electric source 18, as shown in Figure 2, use tabular conductor 19.Lateral wall ground along vacuum tank 11 is provided with this tabular conductor 19, and tabular conductor 19 for example is made of copper coin.In on the point (high frequency supply terminals 20) that high frequency electric source 18 is connected in copper coin through impedance integrator 17, the electrode (the white circle among Fig. 2) of antenna 16 is connected on the copper coin.In addition, the electrode of the black circle expression ground connection side among Fig. 2.The electrode that is connected in each antenna 16 on the copper coin and the distance of high frequency supply terminals 20 are 1/4 also shorter than what put on high frequency wavelength on the antenna 16.By widening the width of copper coin, extending should distance.
The action of the plasma generating equipment of present embodiment is described.Make lifting unit 14a action, substrate platform 14 is descended.Processed substrate 13 is imported in the vacuum tanks 11 from substrate gateway 12, on being loaded into substrate platform 14 after, make substrate platform 14 rise to assigned position.In with vacuum tank, reduce pressure behind the authorized pressure, in the unstrpped gas importing gas pipeline 15 of air pressure with regulation, provide the high frequency power of regulation to each high frequency antenna 16 from 4 high frequency electric sources 18 plasma.Thus, by the induction field that generates respectively from a plurality of high frequency antennas 16, generate plasma.
Below, with experimental result plasma density or the plasma electron energy that the plasma generating equipment of the 1st embodiment generates is described.
The plasma generating equipment of expression the 1st embodiment generates argon (Ar) plasma (measuring respectively) among Fig. 4 under Ar gas flow: 50ccm, air pressure: 0.66Pa and 1.33Pa, and with the result of the plasmoid of the central part of langmuir probe method mensuration vacuum tank 11 (from the medial surface of the sky borehole wall position to vertical downside 160mm).Data shown in Fig. 4 (a) are that the limit changes the aggregate value limit mensuration plasma potential Vp of the high frequency power that offers whole antennas 16 and the data of floating potential Vf.(b) data shown in are that the limit changes aggregate value limit mensuration plasma ion density Ni, the plasma electron density Ne of described high frequency power and the data of plasma electron energy Te.Plasma potential Vp and floating potential Vf reduce corresponding to the increase of the power that provides, and plasma ion density Ni, plasma electron density Ne and plasma electron energy Te increase corresponding to the increase of power.In addition, as can be seen from Figure 4,, can be suitable for 1 * 10 of various plasma process by the plasma generating equipment of the 1st embodiment
11Above higher ion volume density generates the plasma of the following low plasma current potential of 20V.
The result of the plane distribution (uniformity of plasma) of the plasma density under expression is measured from the medial surface of the sky borehole wall in the vacuum tank 11 to vertical downside 195mm height among Fig. 5.Here, estimate by the ion saturation current density that obtains by the langmuir probe method.Ion saturation current density is corresponding to plasma ion density.(a) be 4 high frequency electric sources 18 from the plasma generating equipment that is arranged on the 1st embodiment measurement results the when power that respectively differs 1000W is provided.On the other hand, (a) be to provide 1300W, measurement result when the high frequency electric source 18 that is connected in 3 antennas provides 700W power from the high frequency electric source 18 that is connected in 4 antennas.Therefore, it all is 4000W that the power that provides is aggregated under the arbitrary situation of (a) and (b).The plane distribution uniformity of plasma density (b) is than (a) height.Especially scheming the grid B shown in (b), 2, D, in 4 area surrounded, plasma density is roughly even.Like this, by each power supply adjustment being offered the power of antenna, may command plasma density distribution.
Expression has the formation of plasma generating equipment of each high frequency electric source being adjusted the function of high frequency power phase place among Fig. 6.In this device, waveshape detector (or phase detectors) 21 is set at outlet side corresponding to the impedance integrator 19 of each high frequency electric source 18a-18d configuration.Waveshape detector 21 is taken into the waveform of the high frequency power that offers antenna 16 at any time, and this waveform signal is sent to phase regulator 22.Phase regulator 22 detects the phase difference of 18 of each high frequency electric sources from this waveform signal, according to this result, send phase control signal to each high frequency electric source 18, to become predetermined phase difference.Export after the phase place of each high frequency electric source 18 adjustment high frequency power.
The result of the variation of the plasma density the when plasma generating equipment of presentation graphs 6 is measured the phase difference variation that makes between high frequency electric source among Fig. 7.The longitudinal axis of Fig. 7 is near the plasma electron density Ne at measuring point place, the center of vacuum tank.Transverse axis is represented the phase difference between high frequency electric source 18a-18b, 18b-18c, 18c-18d.Phase difference is big more as can be known from measurement result, and then plasma density increases more.Think that this is by the phase place difference between antenna, accelerated electron between these antenna, the result, plasma density increases.Because think that intensity that this electronics quickens changes along with various factors such as the size of the shape of antenna or antenna distance, air pressure, vacuum tank 11, so suitably adjust phase difference, makes plasma density become the highest.
Among Fig. 8 the plasma generating equipment of expression the 1st embodiment in the length a of sidewall direction of elongation antenna conductor, reduce the example of day number of lines.1.56 times the antenna 23a of two length a for Fig. 3 respectively is set in the inwall of vacuum tank long side (a), 1.27 times the antenna 24a of two length a for Fig. 3 respectively is set in the inwall of short brink.2.67 times the antenna 23b of a length a for Fig. 3 respectively is set in the inwall of vacuum tank long side (b), 2.20 times the antenna 24b of a length a for Fig. 3 respectively is set in the inwall of short brink.With regard to these formations, when the impedance change that makes antenna self owing to the length of extending antenna conductor was big, by the minimizing of sky number of lines, the high frequency power that offers each antenna became big.
The device of presentation graphs 3 and Fig. 8 (a) and (b) is measured the result of the amplitude of plasma potential and floating potential among Fig. 9.Extend the conductor of antenna more, reduce the sky number of lines of each power supply, it is big more that the amplitude of floating potential and floating potential becomes.Think that this is when antenna impedance uprises, the sky number of lines of each power supply diminishes, thereby the current potential of antenna uprises and causes.Like this, the amplitude of plasma potential and floating potential becomes the big reason that increases the damage of plasma process intermediate ion that constitutes, and but then, is effective under the situation that generates the high gaseous plasma of hydrogen or helium plasma energy.
(the 2nd embodiment)
In the 2nd embodiment, the formation of the plasma generating equipment that is conceived to the antenna aspect ratio is described.
The plane graph of the 2nd embodiment shown in Figure 10.The aspect ratio of antenna 26 during the device that this plasma generating apparatus has only changed the 1st embodiment constitutes.Therefore, in Figure 10, to the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source also identical with the 1st embodiment.In the device of this figure, shown in Figure 11 (a), the aspect ratio of whole antennas 26 is made as 2 (vertical: horizontal=2: 1).In addition, shown in Figure 11 (b), the aspect ratio of the antenna 16 of the 1st embodiment is 1 (vertical: horizontal=1: 1).If the area S in the conductor surrounded zone of the antenna 26 of the 2nd embodiment is identical with the antenna 16 of the 1st embodiment.
Below, with experimental result plasma density or the plasma electron energy that the plasma generating equipment of the 2nd embodiment generates is described.Here, the effect that produces for the variation of observing aspect ratio, to with the aspect ratio of whole high frequency antennas neat be that 2 (present embodiment, the antennas of Figure 11 (a)), 1 (antenna of the 1st embodiment, Figure 11 (b)) and 0.5 3 kinds of plasma generating equipments such as (antennas of Figure 11 (c)) are measured.Aspect ratio is that 1 edge lengths of 1 high frequency antenna is 15cm.In this experiment, argon gas is provided in vacuum tank, up to the air pressure that is 1.33Pa, providing frequency to each high frequency antenna is the high frequency power of 13.56MHz, generates argon plasma.In addition, in the mensuration of plasma density, use the langmuir probe method.
Among Figure 12 these 3 kinds of plasma generating equipments of expression measure that substrate platform central authorities are just going up, with the result of the plasma density of high frequency antenna equal height.Here, the longitudinal axis is the plasma density of representing with logarithmic scale, and transverse axis is the size of the high frequency power that provides of each high frequency electric source.Establishing under the identical situation of high frequency power, using aspect ratio is that can to obtain than using aspect ratio be the also high plasma density of device of 1 and 0.5 high frequency antenna for the device one of the present embodiment of 2 high frequency antenna.
The same among Figure 13 with Figure 12, represent that 3 kinds of devices measure the result of the Energy distribution of the plasma electron that substrate platform central authorities are just going up.If the size of the high frequency power that each high frequency electric source provides is 2000W.The parameter of parameter beyond the high frequency power during with mensuration shown in Figure 12 is identical.The longitudinal axis is a logarithmic scale.To be 2 device compare for the device of value in addition with aspect ratio aspect ratio, has the plasma electron increase of 10-18eV energy.The potential difference that this high-octane electronics is produced in the high frequency antenna is quickened the electronics that the back generates.Along with the aspect ratio difference, this electronics is generated, sudden direction changes.With regard to the U font high frequency antenna of present embodiment, because generate high-energy electron,, be that 1 or 0.5 situation is compared with aspect ratio so be under 2 the situation in aspect ratio at the length direction of high frequency antenna, there is more high-energy electron.
In addition, the result of Figure 13 represents by changing the aspect ratio of high frequency antenna, the electron energy in the may command plasma.Thus, the important factor during also plasma such as may command ion species or free radical kind is processed.
Below, shown in the plane graph of Figure 14, the different example of aspect ratio that makes each antenna is described.In plasma generating equipment shown in Figure 14, the aspect ratio of 1 high frequency antenna of central authorities (for example high frequency antenna 26a) is 2 in 3 high frequency antennas that are located at 2 high frequency antennas of central authorities in 4 high frequency antennas that are provided with in the long side sidewall of vacuum tank 11 and are provided with in the short brink sidewall, and the aspect ratio of establishing the high frequency antenna (for example high frequency antenna 26b) near 11 4 jiaos of vacuum tanks is 1.This is in order to increase as near the plasma density the substrate platform center in purpose zone, and increases the aspect ratio of the high frequency antenna that points to this place.
Use shown in Figure 15 (a) device of Figure 14 measure with the high frequency antenna equal height under the result of spatial distribution of plasma density.Simultaneously, as the comparative example of the 2nd embodiment, carry out the same result who measures at the device that shown in Figure 15 (b) aspect ratio of whole high frequency antennas is made as 1.Here, the size of establishing the high frequency power that each high frequency electric source provides is 1000W, and plasma generation condition in addition is identical with the condition of above-mentioned the 2nd embodiment.As can be seen from Figure 15, in the device of Figure 14, the plasma density of central part is than the height of comparative example, and on the contrary, the plasma density that suppresses the outer edge uprises, and the result compares with the device of comparative example, has improved the uniformity of plasma density.
(the 3rd embodiment)
In the 3rd embodiment, illustrate to be conceived in abutting connection with the adjacent electrode of the antenna formation of the plasma generating equipment of polarity each other.
The plane graph of the 3rd embodiment shown in Figure 16.To the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source identical with the 1st embodiment.The polarity of electrode of each high frequency antenna 16 during the device that this plasma generating apparatus has only changed the 1st embodiment constitutes.Particularly, in the antenna groups of 3 or 4 antenna formations in being arranged on same sidewall, the high frequency antenna adjacent electrode each other of establishing adjacency is same polarity each other.For example, in antenna groups 31a, the electrode of the side that is adjacent to each other among the high frequency antenna 16a of adjacency and the high frequency antenna 16b all is connected on the impedance integrator 17-high frequency electric source 18, with the electrode of the side that is adjacent to each other among high frequency antenna 16b and high frequency antenna 16c ground connection all.
Shown in Figure 17 (b), the high frequency antenna of establishing adjacency each other in the terminal of side closer to each other be under the situation of opposite polarity, produce potential difference between the adjacent electrode in the gap 32 between the adjacency antenna.Therefore, the plasma density in this gap 32 is than other position height.In addition, the thing followed is the plasma density decline of other position.On the contrary, in the device of the 3rd embodiment, be identical polar by establishing in abutting connection with antenna adjacent electrode each other, can between the adjacent electrode in gap 32, not produce potential difference.Therefore, can prevent that potential difference rises plasma density between terminal because of existing in this gap 32, prevent that the plasma density of other parts from descending.
Below, the result of the plasma density that the plasma generating equipment of measuring the 3rd embodiment generates is shown.In this experiment, argon gas is provided in vacuum tank, till the air pressure that is 1.33Pa, providing frequency to each high frequency antenna is the high frequency power of 13.56MHz, generates argon plasma.Other condition is represented when the explanation of each mensuration.In addition, in the mensuration of plasma density, use the langmuir probe method.
The plasma generating equipment of expression the 3rd embodiment is being measured the result of plasma density on just with high frequency antenna equal height, substrate platform central authorities among Figure 18.Illustrating in order relatively to make adjacent electrode among this figure simultaneously is the measurement result of the plasma generating equipment of opposite polarity each other.Here, the longitudinal axis is the plasma electron density of being represented by logarithmic scale, and transverse axis is the size of the high frequency power that provides of each high frequency electric source.Value in high frequency power is under the situation of arbitrary value, and the device of present embodiment all can obtain the plasma density higher than the device of comparative example.Especially be under the situation of 1200W-2500W in high frequency power, the plasma density of present embodiment is about 2 times of plasma density of comparative example.
Measure the result of the spatial distribution of plasma density shown in Figure 19.The condition determination of this moment is as follows.High frequency power only offers 1 group of antenna groups 31b shown in Figure 16.The size of the high frequency power that high frequency electric source provides is 1500W.Represent position on the parallel straight line that leaves the sidewall 13cm that is provided with antenna groups 31b as the transverse axis of Figure 19 of the measuring point of plasma density.As can be seen from Figure 19, the plasma density of the plasma generating equipment end of comparative example is lower than near the plasma density the center, and deviation appears in the spatial distribution of plasma density.On the contrary, in the plasma generating equipment of present embodiment, lacking of the plasma generating equipment of the spatial distribution deviation ratio comparative example of plasma density improves the uniformity of plasma density distribution.
(the 4th embodiment)
In the 4th embodiment, the formation that impedance component is connected in the plasma generating equipment on the antenna is described.
The plane graph of the 4th embodiment shown in Figure 20.To the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source identical with the 1st embodiment.This plasma generating apparatus is connected impedance component 41 between electrode of each high frequency antenna 16 and impedance integrator 17 with regard to the device of the 1st embodiment constitutes.As impedance component 41, for example can use variableimpedance coil 42 shown in Figure 21.In addition, the adjusting of the resistance value of variableimpedance coil 42 also can manually be carried out, but under the situation of carrying out FEEDBACK CONTROL described later, expectation is provided with driver 43 and carries out automatically.In addition, in the present embodiment, impedance component 41 is connected on the electrode of high frequency electric source 20 sides of antenna 16, but also impedance component 41 can be connected on the electrode of ground connection side.
In addition, in the 4th embodiment, shown in the vertical direction sectional view of Figure 22, pick-up winding 44 and capacitor 45 are set.Because be projected into the part that high frequency antenna 16 externally is set of vacuum tank 11, so as long as pick-up winding 44 and capacitor 45 are arranged near the of this protuberance, not corroded by plasma.Because pick-up winding 44 is used for amperometric determination, so also can be arranged on one of the ground connection side of high frequency antenna 16, connection side of tremendously high frequency power supply.In order to be transformed into direct current signal, on each pick-up winding 44 and capacitor 45, be connected bridgt circuit shown in Figure 23 46 respectively from the AC signal of pick-up winding 44 or capacitor 45.Also can use the wave detector of output direct current signal after the detection AC signal to replace bridgt circuit.The control part 47 (Figure 20) of the signal of the resistance value that in addition, be provided with behind these signals of input, output is used to set impedance component 41.
In the plasma generating equipment of present embodiment, for example former thereby in plasma density, produce under the situation about distributing because of in copper coin 19, producing Temperature Distribution etc., become appropriate value by the power that will offer each high frequency antenna 16 behind the resistance value of regulating each impedance component 41, the density of homogenizing plasma.Here, has reproducibility in the plasma density distribution of generation, under the resistance value that each impedance component of reply is set waits as can be known situation by experiment, as long as use blocked impedance element.In addition, plasma density distribution is because of the gas that uses or the conditions such as power that provide are different has under the same conditions under the situation of reproducibility, as long as use variable impedance element to set resistance value corresponding to this condition.In addition, under the situation of not knowing based on the difference of the plasma density distribution of condition or reproducibility, the feedback plasma density distribution is carried out the resistance value of variable impedance element and is regulated.
Followingly carry out described FEEDBACK CONTROL.To import control part 47 from the current signal that is arranged on the pick-up winding 44 in each antenna and/or from the voltage signal of capacitor 45.The power signal of one of these signals in certain antenna or their long-pending formation is that setting is when above, promptly the plasma density around this antenna is setting when above, and the driver 43 that control part 47 is provided with in the impedance component 41 that is connected in this antenna is exported the signal of the resistance value that is used to increase this element.On the other hand, signals such as the electric current in antenna are under the situation below the setting, and control part 47 is to the signal of driver 43 outputs reducing resistance value.The driver 43 that receives these signals from control part 47 should be set setting for by impedor resistance value.Thus, the plasma density around this impedance component can be controlled in the prescribed limit.
Below, the experiment of the plasma density distribution of measuring the plasma generating equipment generation of using present embodiment is described.In this experiment, only 3 antenna A, B, the C that with dashed lines surrounds in Figure 20 provide high frequency power, measure apart from the plasma density distribution on the straight line of the vacuum tank side 13cm that these antenna is set with the langmuir probe method.Here the plasma of Sheng Chenging is an argon plasma, is providing argon gas up to for behind the air pressure of 1.33Pa, provides the high frequency power of 2000W, 13.56MHz from being connected in a high frequency electric source on 3 antenna A, B, the C.
By corresponding to regulating impedor resistance value from the signal of pick-up winding 44, making and producing the size of current ratio flow through 3 antenna A, B, C is three states such as 1: 1.2: 1,2: 1: 2 and 3: 1: 3, and each situation is measured plasma density distribution.These measurement results shown in Figure 24.Each electric current at 3 high frequency antennas equates substantially, current ratio is under 1: 1.2: 1 the situation, and near the plasma density the central authorities uprises the plasma density step-down of outer edge.On the contrary, be that near the plasma density the central authorities reduces under 2: 1: 2 the situation in the current ratio behind the electric current of the high frequency antenna that increases two ends, on the other hand, the plasma density of outer edge rises, and the uniformity of plasma density is improved as can be known.In addition, be under 3: 1: 3 the situation becoming current ratio behind the electric current of the high frequency antenna that increases two ends, be that 1: 1.2: 1 situation is opposite with current ratio, near the plasma density step-down the central authorities.
In addition, the current ratio that makes this plasma density distribution the best is different because of the difference that conditions such as power are provided of the kind of plasma gas or pressure, high frequency electric source.Therefore, suitably regulate impedor resistance value, make this current ratio become the optimum value that is adapted to these conditions.
All the flat shape of vacuum tank is made as rectangle in the various embodiments described above, but also circle wait other shape.In addition, in the various embodiments described above, antenna is arranged on the sidewall of vacuum tank, but also part or all of antenna can be arranged on the sky borehole wall of vacuum tank.
Claims (10)
1, a kind of plasma generating equipment is characterized in that: possess
A) vacuum tank;
B) be arranged on the substrate platform that described vacuum tank is interior, load processed substrate; With
C) in described vacuum tank, be arranged in parallel a plurality of high frequency antennas on described substrate platform, wherein,
Be parallel to the be arranged side by side electrode of antenna of described substrate platform, the adjacent electrode in abutting connection with antenna of 1 group or many groups is same polarity each other.
2, plasma generating equipment according to claim 1 is characterized in that:
With described antenna alignment on the sidewall of vacuum tank or day borehole wall or the two.
3, plasma generating equipment according to claim 1 is characterized in that:
For whole antennas, will be made as same polarity each other in abutting connection with the adjacent electrode of antenna.
4, plasma generating equipment according to claim 1 is characterized in that:
Described antenna surface insulated body covers.
5, plasma generating equipment according to claim 1 is characterized in that:
Described antenna is shaped as planar shaped in vacuum tank.
6, plasma generating equipment according to claim 1 is characterized in that:
Described many strip antennas are divided into a plurality of groups that are made of one or more antennas separately, with regard to each group, to each day line parallel high frequency power is provided.
7, a kind of plasma control method, it is characterized in that, for possess in vacuum tank, from the sidewall of vacuum tank or day borehole wall or the two, be parallel to the plasma generating equipment of a plurality of high frequency antennas of the substrate platform arrangement of loading processed substrate, offer the high frequency power of described antenna by adjustment, be controlled at the state of the plasma that forms in the vacuum tank, by 1 group or many groups are made as same polarity each other in abutting connection with the adjacent electrode of antenna, control the plasma density distribution in the described plasma generating equipment.
8, plasma control method according to claim 7 is characterized in that:
For whole electrodes, will be made as same polarity each other in abutting connection with the adjacent electrode of antenna.
9, a kind of manufacture of substrates is characterized in that:
By each described plasma generating equipment of claim 1-6 or claim 7 or 8 described plasma control methods, generate the plasma of raw material, and this raw material is piled up.
10, a kind of manufacture of substrates is characterized in that:
The plasma that use is generated by each described plasma generating equipment of claim 1-6 or claim 7 or 8 described plasma control methods is carried out etch processes.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002363988A JP3618333B2 (en) | 2002-12-16 | 2002-12-16 | Plasma generator |
| JP2002363989 | 2002-12-16 | ||
| JP2002363988 | 2002-12-16 | ||
| JP2003014718 | 2003-01-23 |
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| CNB2003801061178A Division CN100413382C (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
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| CN101127305A CN101127305A (en) | 2008-02-20 |
| CN100546005C true CN100546005C (en) | 2009-09-30 |
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| CN2007101624036A Expired - Lifetime CN101128084B (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
| CN2007101624017A Expired - Lifetime CN101128083B (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
| CNB2007101624040A Expired - Lifetime CN100546005C (en) | 2002-12-16 | 2003-12-12 | Plasma generating equipment, plasma control method and manufacture of substrates |
| CNB2003801061178A Expired - Lifetime CN100413382C (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
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| CN2007101624017A Expired - Lifetime CN101128083B (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
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| JP2007149638A (en) * | 2005-10-27 | 2007-06-14 | Nissin Electric Co Ltd | Plasma generation method and device and plasma treatment device |
| JP2007123008A (en) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | Plasma generation method and its device, and plasma processing device |
| JP2007220600A (en) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | Plasma generation method and plasma generation device as well as plasma treatment device |
| JP2007311182A (en) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | Inductively-coupled plasma processing device, and plasma processing method |
| JP5329167B2 (en) * | 2007-11-21 | 2013-10-30 | 東京エレクトロン株式会社 | Inductively coupled plasma processing apparatus, inductively coupled plasma processing method, and storage medium |
| CA2730431A1 (en) * | 2008-07-14 | 2010-01-21 | United Solar Ovonic Llc | Deposition apparatus for improving the uniformity of material processed over a substrate and method of using the apparatus |
| KR101063763B1 (en) * | 2009-01-22 | 2011-09-08 | 서울대학교산학협력단 | Plasma generation system |
| JP2010212321A (en) * | 2009-03-09 | 2010-09-24 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus |
| JP5400434B2 (en) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | Plasma processing equipment |
| CN102326457B (en) * | 2009-05-19 | 2014-05-07 | 日新电机株式会社 | Plasma apparatus |
| JP5723130B2 (en) | 2010-09-28 | 2015-05-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5935461B2 (en) * | 2012-04-03 | 2016-06-15 | 株式会社Ihi | Plasma processing equipment |
| JP5977853B1 (en) * | 2015-03-20 | 2016-08-24 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| JP7221115B2 (en) * | 2019-04-03 | 2023-02-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
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| AU2003195A (en) * | 1994-06-21 | 1996-01-04 | Boc Group, Inc., The | Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines |
| JP3332857B2 (en) * | 1998-04-15 | 2002-10-07 | 三菱重工業株式会社 | High frequency plasma generator and power supply method |
| JP3572204B2 (en) * | 1998-08-26 | 2004-09-29 | 三菱重工業株式会社 | Plasma CVD apparatus and thin film electronic device manufacturing method |
| JP3836636B2 (en) * | 1999-07-27 | 2006-10-25 | 独立行政法人科学技術振興機構 | Plasma generator |
| JP3762650B2 (en) * | 2001-03-02 | 2006-04-05 | 日本高周波株式会社 | Power supply system for plasma processing equipment |
| JP5017762B2 (en) * | 2001-09-27 | 2012-09-05 | 株式会社Ｉｈｉ | Discharge device, plasma processing method |
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2002
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2003
- 2003-12-12 CN CN2007101624036A patent/CN101128084B/en not_active Expired - Lifetime
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- 2003-12-12 CN CNB2007101624040A patent/CN100546005C/en not_active Expired - Lifetime
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| JP2004200232A (en) | 2004-07-15 |
| CN101128083B (en) | 2012-04-11 |
| CN100413382C (en) | 2008-08-20 |
| CN1726745A (en) | 2006-01-25 |
| CN101128084B (en) | 2011-12-14 |
| JP3618333B2 (en) | 2005-02-09 |
| CN101128083A (en) | 2008-02-20 |
| CN101127305A (en) | 2008-02-20 |
| CN101128084A (en) | 2008-02-20 |
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