CN100544053C - Method for preparing anisotropic organic field effect transistor by combining imprinting technology - Google Patents
Method for preparing anisotropic organic field effect transistor by combining imprinting technology Download PDFInfo
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- CN100544053C CN100544053C CNB2006100120526A CN200610012052A CN100544053C CN 100544053 C CN100544053 C CN 100544053C CN B2006100120526 A CNB2006100120526 A CN B2006100120526A CN 200610012052 A CN200610012052 A CN 200610012052A CN 100544053 C CN100544053 C CN 100544053C
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000005669 field effect Effects 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000005459 micromachining Methods 0.000 abstract 1
- 239000005416 organic matter Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
The invention belongs to the field of micro-machining in organic semi-conductor science, and particularly relates to a method for preparing an anisotropic organic field effect transistor by combining an imprinting technology. The method comprises the following steps: 1. preparing an insulating medium layer on a conductive substrate; 2. depositing and growing a first layer of organic semiconductor film on the surface of the insulating medium layer film; 3. imprinting the organic film by using a template, and transferring the designed template pattern to the first layer of organic film; 4. depositing and growing a second layer of homogeneous organic matter film; 5. and depositing source and drain metal electrodes through the hollowed mask plate to finish the preparation of the anisotropic organic field effect transistor.
Description
Technical field
The invention belongs to the micro processing field in organic semiconductor, particularly a kind of method of preparing anisotropic organic field effect tube combined with stamp technology.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.The mobility that improves organic field-effect tube is the target that pursue in this field always.In studying process how to improve the organic transistor performance, new features have been it is found that, be exactly the anisotropy of carrier mobility, i.e. the mobility of mobility when the orientation of carrier transport direction and thin-film material parallels when orthogonal.The method for preparing at present the anisotropy organic field-effect tube mainly is to pass through the organic material of the coated last layer of method of wiping in a certain direction as inducer on dielectric layer, and the deposition growing organic semiconducting materials forms anisotropic film then.This method controllability is low, and is repeatable poor, and film performance is inhomogeneous and introduce impurity easily.
The preparation method who the purpose of this invention is to provide a kind of anisotropy organic field-effect tube, it at first deposits the ground floor organic semiconductor thin-film, then by stamping technique the figure transfer that designs to the organic film surface, vacuum moulding machine second layer organic semiconductor thin-film again, acquisition has the organic semiconducting materials of orientation, then sedimentary origin leaks metal electrode, finishes the preparation of anisotropic organic field effect tube.
Summary of the invention
A kind of method of preparing anisotropic organic field effect tube combined with stamp technology is by the primary insulation dielectric deposition, twice organic semiconductor thin-film deposition, and once impression and a metal deposition obtain anisotropic organic field-effect tube,
Its processing step is as follows: 1, prepare insulating medium layer on conductive substrates; 2, deposition growing ground floor organic semiconductor thin-film on the insulating medium layer film surface; 3, utilize template impression organic film, the template graphics of design is transferred on the ground floor organic film; 4, hydatogenesis growth second layer homogeneity organic thin film on the ground floor organic film surface of figure is being arranged; 5, leak metal electrode by the hollow mask sedimentary origin, finish the preparation of anisotropy organic field-effect tube.
Characteristics of the present invention are first hydatogenesis ground floor organic semiconducting materials on the dielectric layer substrate, then by stamping technique the orientation figure transfer that designs to the ground floor organic film, hydatogenesis second layer organic semiconducting materials again, owing to be subjected to inducing of ground floor organic substance surfacial pattern, second layer organic semiconducting materials can form anisotropic film, improves the mobility of device.The invention provides that a kind of artificial technology is simple, controllability is high, the method for the anisotropy organic field-effect tube of good reproducibility, preparation high mobility that uniformity is high.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description,
Fig. 1-1 is to Fig. 1-the 8th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 8th, the flow chart of the invention process example.
Embodiment
The flow chart (section in the flow chart is the A-A section among Fig. 1-8) of invention:
1, as Figure 1-1, adopt the technology of thermal oxide growth or the technology of chemical vapour deposition (CVD) to prepare the dielectric layer film in surface of silicon.
2, shown in Fig. 1-2, at dielectric layer surface vacuum deposition ground floor organic semiconductor thin-film.
3, as Figure 1-3, on ground floor organic semiconductor thin-film surface, impress processing with the template for preparing.
4, shown in Fig. 1-4, remove impression block, the figure transfer on the template to the surface of ground floor organic semiconductor thin-film.
5, shown in Fig. 1-5, deposition second layer homogeneity organic film on the ground floor organic film surface of handling through impression.Owing to inducing of the orientation figure that is subjected to the ground floor film surface, second layer organic semiconducting materials forms the anisotropic film shown in Fig. 1-6 according to specific oriented growth.
6, shown in Fig. 1-7, leaking metal electrode in organic semiconductor thin-film surface deposition source by hollow mask plate is the method deposition that adopts metal vaporizing technique or magnetron sputtering, they and organic semiconductor layer, and the back grid of dielectric layer and low-resistance constitutes organic field-effect tube together.Vertical view is shown in Fig. 1-8.
Examples of implementation flow process (section in the flow chart is the B-B section among Fig. 2-8):
1, shown in Fig. 2-1, adopt the technology of thermal oxide growth to prepare the silica dioxide medium layer film in surface of silicon.
2, shown in Fig. 2-2, at silica dioxide medium laminar surface vacuum moulding machine ground floor pentacene organic semiconductor thin-film.
3, shown in Fig. 2-3, on ground floor organic semiconductor thin-film surface, impress processing with the silicon template for preparing.
4, shown in Fig. 2-4, remove the silicon impression block, the figure transfer on the template to the surface of ground floor pentacene organic semiconductor thin-film.
5, shown in Fig. 2-5, deposition second layer pentacene organic film on the ground floor pentacene organic film surface of handling through impression.Because inducing of the orientation figure of ground floor film surface, second layer pentacene body material according to specific oriented growth, form the anisotropic film shown in Fig. 2-6.
6, shown in Fig. 2-7, at organic semiconductor thin-film surface deposition gold source-drain electrode, with organic conductive layers, dielectric layer and low-resistance silicon back grid constitute organic field-effect tube together by hollow mask plate.Vertical view is shown in Fig. 2-8.
Claims (5)
1, a kind of method of preparing anisotropic organic field effect tube combined with stamp technology is by the primary insulation dielectric deposition, twice organic semiconductor thin-film deposition, once impression and a metal deposition obtain anisotropic organic field-effect tube, it is characterized in that its step is as follows:
Step 1, on conductive substrates, prepare insulating medium layer;
Step 2, on the insulating medium layer film surface hydatogenesis ground floor organic semiconductor thin-film;
Step 3, utilize template impression organic film, the template graphics that designs is transferred on the ground floor organic film;
Step 4, at the second layer organic semiconductor thin-film that hydatogenesis growth and ground floor organic semiconductor thin-film homogeneity on the ground floor organic semiconductor thin-film surface of figure are arranged;
Step 5, leak metal electrode, finish the preparation of anisotropy organic field-effect tube by the hollow mask sedimentary origin.
2, the method for preparing anisotropic organic field effect tube combined with stamp technology according to claim 1 is characterized in that, wherein said conductive substrates is the lower electric conducting material of resistivity, its objective is the grid as organic field-effect tube.
3, the method for preparing anisotropic organic field effect tube combined with stamp technology according to claim 1 is characterized in that, the insulating medium layer of wherein said deposit on the conductive substrates surface is to adopt the method for thermal oxide growth or chemical vapour deposition (CVD) to obtain.
4, the method of preparing anisotropic organic field effect tube combined with stamp technology according to claim 1, it is characterized in that, the deposition of wherein said ground floor organic semiconductor thin-film adopts the vacuum thermal evaporation method, its objective is the orderly continuous ground floor organic semiconductor thin-film that grows big crystal grain on dielectric layer.
5, the method for preparing anisotropic organic field effect tube combined with stamp technology according to claim 1 is characterized in that, it is to adopt the method for metal vaporizing technique or magnetron sputtering to deposit that metal electrode is leaked in wherein said source.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100120526A CN100544053C (en) | 2006-05-31 | 2006-05-31 | Method for preparing anisotropic organic field effect transistor by combining imprinting technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100120526A CN100544053C (en) | 2006-05-31 | 2006-05-31 | Method for preparing anisotropic organic field effect transistor by combining imprinting technology |
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| CN101083302A CN101083302A (en) | 2007-12-05 |
| CN100544053C true CN100544053C (en) | 2009-09-23 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100585904C (en) * | 2007-12-12 | 2010-01-27 | 中国科学院微电子研究所 | Method for preparing organic field effect transistor |
| CN107451520A (en) * | 2017-04-05 | 2017-12-08 | 王开安 | The preparation method of ultrasonic fingerprint recognizer component electrode pattern |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040029041A1 (en) * | 2002-02-27 | 2004-02-12 | Brewer Science, Inc. | Novel planarization method for multi-layer lithography processing |
| JP2004351693A (en) * | 2003-05-28 | 2004-12-16 | Daikin Ind Ltd | Imprint processing die and its manufacturing method |
| CN1722366A (en) * | 2004-06-01 | 2006-01-18 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor device |
| CN1744343A (en) * | 2004-09-02 | 2006-03-08 | 财团法人工业技术研究院 | Method for making organic film transistor by high-precision printing |
-
2006
- 2006-05-31 CN CNB2006100120526A patent/CN100544053C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040029041A1 (en) * | 2002-02-27 | 2004-02-12 | Brewer Science, Inc. | Novel planarization method for multi-layer lithography processing |
| JP2004351693A (en) * | 2003-05-28 | 2004-12-16 | Daikin Ind Ltd | Imprint processing die and its manufacturing method |
| CN1722366A (en) * | 2004-06-01 | 2006-01-18 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor device |
| CN1744343A (en) * | 2004-09-02 | 2006-03-08 | 财团法人工业技术研究院 | Method for making organic film transistor by high-precision printing |
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| CN101083302A (en) | 2007-12-05 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 |
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Effective date of registration: 20130418 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |