CN100513082C - Method and apparatus for improved chemical mechanical planarization - Google Patents
Method and apparatus for improved chemical mechanical planarization Download PDFInfo
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- CN100513082C CN100513082C CNB2005800371585A CN200580037158A CN100513082C CN 100513082 C CN100513082 C CN 100513082C CN B2005800371585 A CNB2005800371585 A CN B2005800371585A CN 200580037158 A CN200580037158 A CN 200580037158A CN 100513082 C CN100513082 C CN 100513082C
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Abstract
A polishing pad includes a guide plate having affixed thereto a porous slurry distribution layer on one side and a flexible under-layer on the other side. A plurality of polishing elements interdigitated with one another through the slurry distribution layer and the guide plate so as to be maintained in planar orientation with respect to one other and the guide plate are affixed to the flexible under-layer and each polishing element protrudes above the surface of the guide plate to which the slurry distribution layer is adjacent. Optionally, a membrane may be positioned between the guide plate and the slurry distribution layer. The polishing pad may also include wear sensors to assist in determinations of pad wear and end-of-life.
Description
Related application
The present invention requires the U.S. Provisional Patent Application 60/616 of submission on October 6th, 2004, the U.S. Provisional Patent Application 60/639 that on December 27th, 944 and 2004 submitted to, 257 priority, and, be incorporated herein its full content as a reference for its relevant non-temporary patent application.
Technical field
The present invention relates to chemically mechanical polishing (CMP) field, and relates in particular to the structure and material feature of the CMP polishing pad that adopts in the CMP technology.
Background technology
In modern integrated circuits (IC) was made, multilayer material was applied in the damascene structures of previous formation on semiconductor crystal wafer.Chemically mechanical polishing (CMP) is for being used to remove described layer and smooth wafer polishing surface to obtain the glossing of expected structure.CMP can carry out and generally include the chemical grout that employing applies via the polishing pad of relative wafer movement (for example, this pad can rotate relative to the wafer circumference) on oxide and metal.Smooth, the flat surfaces that obtains kept the depth of focus of photoetching for subsequent step and guaranteed and metal interconnectedly can not be absolutely necessary profile step upper deformation.Inlay (Damascene) technological requirement CMP and remove metal such as tungsten or copper to limit interconnection structure from the top surface of dielectric material.
Planarization/the polishing performance of pad/slurries combination is subjected to the mechanical performance of polishing pad and the chemical characteristic and the distribution influence of slurries.Usually polishing pad can be groove porous and/or that comprise distribute slurry.Therefore yet the overall strength that this will reduce polishing pad causes polishing pad more flexible and reduce planarization performance.For example, Figure 1A illustrates because " dish " result that the application flexibility polishing pad causes on wafer 100.The flexible polishing pad provides smooth surface but owing to crosses polished substrate 102 surfaces and go up and form dish 106 such as copper layer 104 than soft element.The consequence that dish causes is the unnecessary reduction of metal thickness, and causes bad device performance.
Can provide the harder polishing pad of better planarization can reduce or eliminate dish by using.By reducing the quantity of pad mesopore and/or groove, it is harder that polishing pad can become, yet this can cause different consequences, for example, and not good grout distribution.Final result may for the quantity that increases the blemish 108 on substrate 102 and/or the copper layer 104 (for example, because scraping and/or spot corrosion surface/layer), as shown in Figure 1B, it shows may be owing to use the blemish 108 that hard relatively polishing pad causes on wafer 100.
No matter flexible is still hard, polishing pad is formed by carbamate (urethane) usually, with casting forming and be filled with the micropore material or formed by the non-woven mat of polyurethane (polyurethane) coating.During polishing,, polishing force produces deformation because causing filling up the surface.Regulating disk that technology covers with the high-purity diamond when being included in rotating pad during the glossing is pressed in and fills up on the surface.The diamond of regulating disk cuts off and removes the top layer of polishing pad, thus new pad interface below exposing.
In Fig. 2 A-Fig. 2 C, above-mentioned viewpoint is described schematically.Particularly, Fig. 2 A shows the sectional side view of traditional new polishing pad 110.Polishing pad 110 comprises through being everlasting such as Rhom﹠amp; Micro element 114 that occurs in the commercial polishing pad among the IC1000 of Haas company and groove 116.Fig. 2 B shows the surface 112 of the polishing pad 110 after the polishing.The top surface of this polishing pad goes out to reveal aging phenomenon 118, and is more obvious around the micro element 114 that plasticity or VISCOUS FLOW owing to the piece urethane material cause aging place, edge.Fig. 2 C shows and finishes the surface 112 of regulating polishing pad after the technology.Note, because the removal of conditioning period material, so the degree of depth of groove 116 is lower than the situation of the new polishing pad shown in Fig. 2 A.
After the polishing and adjusting through several cycles, the gross thickness that is generally polishing pad wears up to so that the essential situation of replacing of polishing pad.Obviously different between different and possible a collection of pad and another batch pad between the rate of depreciation pad of the polishing pad of using in the prior art and the pad.Do not have quantitative methods to determine the pad wearing and tearing at present, thereby determine the terminal point of pad life.Replace ground, the terminal point of pad life is generally based on filling up surperficial macroscopic examination to check remaining depth of groove.Under the situation of unnotched polishing pad, the definite of end of pad life is used to polish the back elapsed time first based on the quantity of wafer polishing or from pad usually.Because these measuring methods are not accurate especially, preferably implement consistent, quantitative methods to determine " end of pad life ".That is, a kind of method based on the surperficial finite wear of pad will be of value to for pad changes provides corresponding basis.
Summary of the invention
Comprise having according to a kind of polishing pad of embodiment of the present invention design in side porous slurry distribution adhered thereto and at the guide plate of the compressible lower floor of opposite side.Cross one another by slurry distribution and guide plate, thereby a plurality of polishing elements that maintain planar orientation with guide plate relative to each other adhere in the compressible lower floor, wherein each polishing element all stretches out in the surface of the guide plate of adjacent slurry distribution.Alternatively, can comprise the film that is arranged between guide plate and the slurry distribution.This film can be film conduction or non-conductive and also can utilize adhesive and guide plate bonding.In some cases, this film can be ion exchange membrane.
The guide plate of polishing pad can be made of electrically non-conductive material also can comprise the hole that holds independent polishing element.Some polishing elements can have circular cross section, and other can have triangular-section or other shapes arbitrarily.Under any circumstance, the polishing element can by following arbitrarily one of them or constitute: heat conducting material, conductive material or electrically non-conductive material.For example, the polishing element can be made of polymer poly aniline, carbon, graphite or the metal filled polymer of conduction.Can form one or more polishing elements and make itself and crystal column surface sliding-contact, and other can form and roll with crystal column surface and to contact (for example, having by rolling tip polymerization, that metal oxide or conductive material constitute).
Slurry distribution material can comprise a plurality of slurries choked flow elements (for example, hole) and have porosity between 10% and 90%.Preferably, though not necessary, slurry distribution material utilizes adhesive to adhere on the guide plate.In some cases, slurry distribution material can comprise the multilayer that different materials constitutes.For example, slurry distribution material can comprise top layer with big relatively hole and the bottom with relative little hole.It is generally acknowledged, can adopt a kind of material to carry out the function of grout distribution element and guide plate.This material can be guide plate, and it has the foam surface of perforate or groove or baffle plate with the flow through slurries on surface of adjusting.
Polishing is paid somebody's debt and expected repayment later and can be comprised wear sensor, and it is designed for the indication that pad wearing and tearing and/or end of life are provided.
Description of drawings
Figure 1A is the embodiment of the dish that adopts the polishing pad of traditional relative flexibility in CMP operating period and cause;
Figure 1B for CMP operating period by the scratch of adopting hard relatively polishing pad to cause or the embodiment of spot corrosion wafer/layer;
Fig. 2 A-2C is a process of utilizing the pad wearing and tearing that traditional polishing pad is subjected to;
Fig. 3 A is for being designed for the cross sectional side view of the circular polishing pad in the CMP operation according to an embodiment of the present invention;
Fig. 3 B is similar to the polishing pad shown in Fig. 2 A, but it comprises the compressible lower floor of another embodiment according to the present invention.
Fig. 4 is the top view of the polishing pad of the polishing pad element with intersection that slurries can flow through of an embodiment again according to the present invention;
Fig. 5 A is the cross sectional side view of the optical pickocff 302 of embedding in the pad 304;
The various optical pickocff designs of Fig. 5 B-5E for being used in combination with polishing pad according to the embodiment of the present invention design;
The electrochemical sensor of Fig. 6 A for below new pad interface, being provided with according to embodiment of the present invention;
Fig. 6 B is for because pad wearing and tearing cause the electrochemical sensor schematic diagram of Fig. 6 A of exposing;
Fig. 7 A is the embodiment of the conductive plate that embeds of an embodiment again according to the present invention below pad interface;
Structure the schematic diagram to help determine pad wear and tear of Fig. 7 B for be fixed on the eddy current sensor on the pad top surface shown in Fig. 7 A according to embodiment of the present invention.
The specific embodiment
Described herein is a kind of CMP polishing pad and technology of improvement, and it is used to polish semiconductor crystal wafer and the sandwich construction on it that is included in the metal damascene structure on the wafer.The present invention recognizes the influence of the physical characteristic of polishing pad to the quality of CMP technology.Specifically, it is generally acknowledged that flexible polishing pad produces dish, produces more blemish and have the harder pad that reduces grout distribution.Though (for example listed different polishing pad structures at this paper, the specific embodiment of geometric ranges, ratio and material) and glossing, but be to be understood that the present invention can be applied to comprise that the polishing pad manufactured materials of other types and deposition remove technology with being equal to.In other words, adopt other materials and technology to think to be included in the scope of the invention claimed in claims behind the specification.
Except various polishing pad results, the present invention also comprises glossing, wherein this glossing comprise with machining, folded, the polymer pad of multilayer pushes down wafer in conjunction with the polishing fluids that can comprise submicron particles and make the relative polishing pad motion of wafer under pressure, thereby the surface that contact that move, pressurization causes the smooth described wafer of removal.Polishing pad according to embodiment of the present invention design comprises various elements: polishing fluids distribution layer, polishing contact or element, guide plate, and optionally elasticity, recoverable (being compressible) lower floor.In some cases, different pad elements are made up of polymer and are polished element and can be known as Pani such as commerce by conductive material
TM(brand name ORMECOM
TM) conducting polymer polyaniline, carbon, graphite or metal filled polymer form.In other embodiments, the polishing element can be made up of such as carbon, graphite or metal filled polymer heat conducting material.Slurry distribution material can be open celled foam and compressible lower floor closed-cell foam.Thereby also can regulate slurry flow rate realization grout distribution function on guide plate by groove being provided or forming baffle plate.
When pad (that is, when it when crystal column surface moves) in use, the polishing element can produce with the sliding-contact of crystal column surface or roll and contact.Under latter instance, one or more polishing elements may have cylinder-shaped body and rotate most advanced and sophisticated.Rotate most advanced and sophisticated can the composition such as polymer, metal oxide or conductive material by different materials.The most advanced and sophisticated polishing of rotation element can polish the identical mode of element with sliding-contact and be incorporated in the cushion material.
Polishing pad as herein described can be used in the relevant different process step of CMP technology.This is included in the application in the rapid technology of multistep, to the continuous slurries that adopt a plurality of polishing pads and different qualities of the technology of a step, adopts a polishing pad and one or more slurries in the whole polishing stage on the other hand.
In some embodiments of the present invention, polishing pad can be designed to have quantitatively determines pad interface wearing and tearing or the simple ability of determining " end of pad life ".For example, can embed " end of pad life " sensor in pad middle distance top surface predetermined depth (that is, measuring) from the polishing element is most advanced and sophisticated, or " detector " more commonly used.When pad wore up to preset thickness with sensor setting or activation, sensor was surveyed these wearing and tearing and is provided input to polishing system.
End-of-life sensor can comprise the printing opacity cylindrical plug of the top surface with reflectance coating covering.Thereby this connector can be embedded in the reflection end of connector in the pad is arranged at pad with preset height top surface below.Light source and detector are arranged in the platform of polissoir by optical transmission window.When light beam incided on the connector of new pad, this light of reflective surface reflects back showed that this pad is still in useful life.Yet when pad has worn up to flushing of the top pact of predetermined value and connector and the pad surface that has now exposed, reflecting surface will be worn and light will be through filling up transmission.The change that the reflection ray signal strength signal intensity causes provides the feedback illustrative of pad wearing and tearing.This variation can be used for determining " end of pad life " (for example, end of life can be represented with the reflected signal strength that is positioned at or be lower than the threshold value of above foundation).
Detection hardware can be positioned at pad (and platform) below or pad top, thereby optical clear connector (opticalinsert) can suitably be regulated to survey and to understand reflected light signal.One or more this connectors can be used for determining the percentage of residue pad life.For example, different connectors can be embedded in different depth, corresponding to 25%, 50%, 75% and 100% (or other score values) of pad life.Can provide the pad wear information in this mode.
In another embodiment of the present invention, provide pad wearing and tearing percentage information thereby single conical plug can and fill up the flush setting in the size of filling up the plug open that exposes between the operating period, and therefore pad life information is provided.Connector can have many ledge surfaces in another embodiment, and it is along with pad weares and teares to expose in various degree.The height of adjustable step is to provide the information about the pad wearing and tearing.
In an embodiment more of the present invention, pad life sensor plug can comprise having according to the tactic filter with different degree of transmission of reflectivity.For example, top layer can have the 100% reflectivity total reflection of described connector (for example, for) filter this moment and new pad flush.Connector degree of depth place 25%, promptly embedded and had for example filter of 75% reflectivity, and, promptly embedded for example filter of 50% reflectivity similarly at 50% connector degree of depth place, and, promptly embedded the filter of 25% reflectivity at 75% connector degree of depth place.Certainly, can change these relative depths and relative percentage to obtain similar functions according to designer's concrete needs.
At first adopt this plug/screen setting, incident light will be reflected fully and pad life is defined as 100% (that is new pad).Along with the pad wearing and tearing, the reflecting layer, top is removed and obtains the filter of 75% (and lower) reflectivity.Along with the exposure (and then by further wearing and tearing removal) of each filter, can determine to remain pad life according to the intensity of reflected signal.Thereby discrete component can be used for surveying and monitor pad life.
In various embodiments of the present invention, sensor can be electrochemical sensor, and its top surface desired depth or a plurality of degree of depth that is included in the new pad of distance is in two or more probes that pad is embedded in.Along with the pad wearing and tearing, expose probe, slurries provide electric conductivity between probe, thus thereby the pathway for electrical signals that forms thus can be used for that detector is propagated or transferred to signal to be surveyed the pad wearing and tearing and finally obtains the pad life end points.
In an embodiment again, sensor can be the conductive plate that the lower face at new pad embeds at the desired depth place.External electric perhaps eddy current sensor can be used for surveying distance apart from conductive plate, thereby determines mat thickness or pad wearing and tearing.Below present invention will be further described this and other embodiments.
Referring now to Fig. 3 A, it shows the cross sectional side view according to the circular polishing pad 200 that is used for CMP technology of an embodiment of the invention design.In use, in when polishing, polishing pad 200 relative crystal column surfaces rotate, pad interface contact with wafer at wafer contact surface 202 (generally under pressure).Slurry distribution material 204 provides the mobile control in the slurry path between the polishing element 206.
The pedestal of polishing pad is a guide plate 208, and it provides cross-brace for polishing element 206 and can be made of the electrically non-conductive material such as polymer or Merlon.In one embodiment of the present invention, guide plate 208 comprises with guide plate 208 and is fabricated to the hole of one or respectively polishes element 206 from the hole that guide plate 208 bores to hold.Polishing element 206 can be fixed on (the polishing element is through this guide plate) on surface rather than the guide plate 208; The adhesive of utilization such as two-sided tape or epoxy resin planar.For example, polishing element 206 can be fixed in flexible lower floor (as described below) or cover (also as described below), but can move freely through the hole in the guide plate 208 in vertical direction about their major axis.They have susceptor diameter greater than the guide plate bore dia of they processes thereby can construct described polishing element.For example, the main body of polishing element can have diameter " a ", and guide plate bore dia " b ", is slightly larger than " a " such as " b ", but still less than the diameter " c " that polishes element base.In fact, the polishing element will be similar to cylinder on the top of flat board.In various embodiments, run through guide plate 208 the hole the degree of depth with at interval can be and different according to the prioritization scheme that is suitable for concrete CMP technology.Each maintains the polishing element in the planar orientation with guide plate relative to each other.
Polishing element 206 can stretch out in the surface of guide plate 208, as shown in Figure 3A.This provides volume for grout distribution between polishing element 206 arranged in a crossed manner and guide plate 208.The polishing element can be different geometry (for example circle and/or triangular-section) and can by heat conduction or conduction and electrically non-conductive material any one of them or constitute.For example, polishing element 206 can be by conduction or heat conducting material, such as conducting polymer, be called as Pani as commerce
TM(brand name ORMECOM
TM) polyaniline, carbon, graphite or metal filled polymer constitute.Polishing element 206 can be to include to roll with the tradition of wafer sliding-contact polishing element or some element or each element and contacts.For example, some or each polishing element 206 can have cylinder-shaped body and the tip of rolling, and is similar to ball-point pen tip.The rolling tip can be polymer, metal oxide or conductive material.
In various embodiments, polishing element 206 also can stretch out above slurry distribution material 204 and be less than or equal to 2.5 millimeters.Yet, should be appreciated that the required slurries of material behavior and upper surface according to polishing element 206 flow, this value can be greater than 2.5 millimeters.
In one embodiment of the present invention, the volume between the polishing element 206 arranged in a crossed manner can be filled with slurry distribution material 204 at least in part.Slurry distribution material 204 can comprise that choked flow element such as baffle plate or groove (not shown) or hole is to regulate slurry flow rate during CMP technology.In various embodiments, porous slurry distribution material 204 has 10% and 90% porosity and can be positioned on the guide plate 208.Slurry distribution material 204 can utilize adhesive such as two-sided tape on guide plate 208.In addition, slurry distribution material 204 can be formed slurry flow rate to locate at the different depth (apart from polished surface) of slurry distribution material 204 to obtain to expect by the multilayer of different materials.For example, the top layer at polished surface place can have bigger hole increasing this lip-deep slurry flow and flow velocity, thereby and lower floor has less hole with in that to keep more slurries to help to regulate slurries near superficial layer mobile.
During use, the thickness 214 (T) of polishing pad 200 influences the rigidity and the physical property of polishing pad.In one embodiment, thickness can be 25 millimeters, yet according to forming polishing pad 200 material that adopts and the type of carrying out CMP technology, this value can the change from 3 millimeters to 10 millimeters.
Now get back to Fig. 3 B, it shows polishing pad 200A.Pad 200A is similar to the structure with reference to the pad 200 described in Fig. 2 A, but comprises compressible lower floor 216.When pressurized, except that other features, compressible lower floor 216 also provides the normal pressure of pointing to polished surface.Usually, when 5psi (pound/per square inch) this compression ratio can be about 10%, yet, should be appreciated that this compression ratio can be different according to forming the material that polishing pad 200 adopts and the type of CMP technology.Compressible lower floor 216 can be by the BONDTEX of RBX Industries company manufacturing
TMFoam forms.In different embodiments, compressible lower floor 216 can be included in the cover 212, the outside of cover 212, or replaces cover 212.
Fig. 4 shows the top view according to the polishing pad 300 of embodiment of the present invention design.Polishing element 206 intersects on whole polishing pad 300.Slurry distribution material 204 is penetrated into the whole volume that is formed by the polishing element 206 that stretches out from guide plate (end illustrates) and surrounded by cover 212.When volume provided slurry path 302, slurry distribution material 204 provided control slurry stream warp as the structure with reference to the above-described volume of Fig. 3 A.
According to concrete CMP technology and grout distribution feature, the distribution of polishing element 206 can be different.In different embodiments, polishing element 206 can have total pad interface area 30% and 80% between density, this density is determined by the diameter of each the polishing diameter 304 (D) of element 206 and polishing pad 300.In one embodiment, diameter 304 is at least 50 microns.In other embodiments, this directly can change between 50 microns and 30 millimeters.The general diameter of polishing element is 3-10mm.
As mentioned above, the part or all of terminal point (for example, pad wearing and tearing cause end of life) of some polishing pad combined sensors that designs according to embodiment of the present invention to determine pad life.Can adopt based on light, electrochemical-or the sensor of electric current determine such as wear/end of life.Pack in the pad in described sensor one or more predetermined depth place below the pad top surface.When exposing owing to electrical wear, described sensor can be propagated the electric conductivity of optical signal or electrochemical sensor situation to closed circuit, thereby the described signal of autobiography sensor is transmitted to one or more detectors in the future.Under the situation that adopts eddy current or capacitance sensor, top surface below and detector that conductive plate can be embedded in pad are arranged at above or below the pad.Therefore, the signal strength signal intensity that mat thickness between plate and the sensor and sensor influence are received by detector, this signal strength signal intensity is used for determining the part or all of terminal point of pad life.
Fig. 5 A is the cross sectional side view that is embedded in the optical pickocff 302 in the pad 304.The top surface of optical pickocff 306 is reflexive so that incident light 308 reflected backs 310, and it is positioned at the top surface below.This sensor has the wearing and tearing of the burnishing surface of quantitatively determining pad or determines that simply " end of pad life " embodiment is of great use for the polishing pad of design.For example, optical pickocff 302 can be used as " end of pad life " sensor, or the top surface predetermined depth place (that is, measuring from the tip of polishing element) that more is widely used as apart from pad is embedded in " acquisition sensor " the pad 304.Be provided with or the preset thickness of activated sensors when pad wears up to, sensor is surveyed these wearing and tearing and is provided and inputs to polishing system.
Obviously detection hardware can be positioned at pad (and platform) below or pad top, and therefore can suitably regulate the optical clear connector to survey and to explain the optical signal of reflection.One or more connectors can be used for determining the percentage of residue pad life.For example, different connectors can be embedded in different depth, the pad life of corresponding 25%, 50%, 75% and 100% (or other increments).Can provide the pad wear information in this mode.
In another embodiment of the present invention, provide the information of wearing and tearing also so the percentage of pad life is provided in the size of filling up the plug open that exposes between the operating period about filling up thereby single conical plug can be set and fill up flush.In an embodiment more of the present invention, connector can have many ledge surfaces, and it is exposed in various degree along with the pad wearing and tearing.The height that can measure step is to provide the information of pad wearing and tearing percentage.
In another embodiment of the present invention, pad life sensor plug can comprise have the transmission in various degree that is provided with according to the reflectivity order filter for example, top layer can have 100% reflectivity (for example, whole reflectivity of this connector) and with new pad flush (or approaching).Connector degree of depth place 25% has promptly embedded the filter with 75% reflectivity, and similarly, at 50% connector degree of depth place, has promptly embedded the filter of 50% reflectivity, and in 75% the connector degree of depth, has promptly embedded the filter of 25% reflectivity.Certainly, according to designer's concrete needs, can change these relative depths and reflectivity percentages to obtain similar functions.
Fig. 5 B-5E shows the embodiment of above affiliated various optical pickocffs, and it can be used in combination with the polishing pad 304 according to embodiment of the present invention.Certainly also can adopt the optical pickocff of other structures.Particularly, Fig. 5 B shows the many steps optical pickocff 312 with reflecting surface 306 ', and Fig. 5 C shows has a plurality of reflecting surfaces 306 " single-sensor 314, Fig. 5 D shows another device that is used for being combined with at single-sensor reflecting surface.In this case, reflecting surface 306 " ' comprise the side of triangular-section sensor 316.Thereby Fig. 5 E shows the area of section ratio of optical pickocff 318 reflecting surfaces 316 of variable area represents the rest parts pad life.Clearly sensor 312,314,316 and 318 can be combined in the polishing pad to one skilled in the art, flushes with the top surface of pad.The change of reflected light signal intensity provides the pad wear information to determine end of pad life.
In an embodiment more of the present invention, end-of-life sensor can be top surface predetermined depth when being included in the new pad of distance or a plurality of degree of depth place and is embedded in two or more probes in this pad.The embodiment of this structure has been shown in Fig. 6 A, has the figure shows the electrochemical sensor 402 of the below that is arranged at new pad 404 surfaces.Along with pad wearing and tearing, expose probe, slurries provide the electric conductivity between the probe, thereby and the pathway for electrical signals that therefore forms can be used for that detector is propagated or be transferred to signal and survey the pad wearing and tearing, and finally survey end of pad life.Fig. 6 B shows because electrochemical sensor that the pad wearing and tearing expose and probe 406 connect by slurry content 408.Continuity in the circuit shows so that pad wearing and tearing to a certain degree to have taken place.
In another embodiment of the present invention, end-of-life sensor can be the conductive plate that the lower face predetermined depth when new pad embeds.External electric perhaps eddy current sensor can be used for the distance of detection range conductive plate, thereby surveys mat thickness or pad wearing and tearing.Fig. 7 A shows the embodiment of the structure with the conductive plate 502 that embeds below pad surface 504.Capacitive sensor plate 506 is fixed on the top surface of pad determining separates, and described separation shows the pad wearing and tearing.Fig. 7 B shows the setting that has on the top surface that is fixed on pad with the eddy current sensor of determining to separate 508.
Therefore, the invention discloses a kind of improved CMP polishing pad and be used for polished semiconductor wafer and on comprise the technology of the sandwich construction of the metal damascene structure on the described wafer.Though with reference to some exemplary embodiment, described the application of polishing pad of the present invention and technology, be to be understood that scope of the present invention should not limited by these embodiment.Alternatively, true scope of the present invention should be limited by following claims.
Claims (32)
1. polishing pad comprises:
On a side, have adhesion porous slurry distribution material thereon and the guide plate that on opposite side, has compressible lower floor; And
Thereby pass described slurry distribution material and the described guide plate a plurality of polishing elements that maintain planar orientation relative to each other with described guide plate intersected with each other, wherein, each polishing element adheres to described compressible lower floor and stretches out in the surface near the described guide plate of described slurry distribution material.
2. polishing pad according to claim 1 is characterized in that, further comprises the film that is arranged between described guide plate and the described slurry distribution material.
3. polishing pad according to claim 2 is characterized in that described film comprises conductive film.
4. polishing pad according to claim 2 is characterized in that described film comprises non-conductive film.
5. polishing pad according to claim 2 is characterized in that, described film utilizes adhesive on described guide plate.
6. polishing pad according to claim 2 is characterized in that described film comprises ion exchange membrane.
7. polishing pad according to claim 1 is characterized in that described guide plate is made of electrically non-conductive material.
8. polishing pad according to claim 1 is characterized in that one of them of described polishing element has circular cross-section.
9. polishing pad according to claim 1 is characterized in that one of them of described polishing element has the triangular-section.
10. polishing pad according to claim 1 is characterized in that, described polishing element is by the one of wherein any of heat conducting material, conductive material or electrically non-conductive material or constitute.
11. polishing pad according to claim 10 is characterized in that, described polishing element is made of one of them of the polymer poly aniline, carbon, graphite of conduction or metal filled polymer.
12. polishing pad according to claim 1 is characterized in that, thereby forms one or more described polishing elements and crystal column surface sliding-contact.
13. polishing pad according to claim 1 is characterized in that, contacts with the crystal column surface rolling thereby form one or more described polishing elements.
14. polishing pad according to claim 13 is characterized in that, forms the described one or more polishing elements that contact with described crystal column surface rolling and has cylindrical bodies and roll most advanced and sophisticated.
15. polishing pad according to claim 14 is characterized in that, the rolling tip of described one or more polishing elements is made of one of them of polymer, metal oxide or conductive material.
16. polishing pad according to claim 1 is characterized in that, described slurry distribution material comprises a plurality of slurries choked flow elements.
17. polishing pad according to claim 16 is characterized in that, described slurry distribution material has the porosity between 10% and 90%.
18. polishing pad according to claim 1 is characterized in that, described slurry distribution material utilizes adhesive on described guide plate.
19. polishing pad according to claim 1 is characterized in that, described slurry distribution material comprises the multilayer that different materials constitutes.
20. polishing pad according to claim 19 is characterized in that, described slurry distribution material comprises the top layer and the bottom that has than aperture that has than macropore.
21. polishing pad according to claim 1 is characterized in that, further comprises cover, this cover is designed to peripherally described guide plate, described polishing element and described slurry distribution material are contained in this cover to small part.
22. polishing pad according to claim 1 is characterized in that, described polishing pad has the thickness between 3 millimeters and 10 millimeters.
23. polishing pad according to claim 1 is characterized in that, described compressible lower floor is formed by elastomeric polymer, and it is designed to provide the positive pressure of the burnishing surface that points to described polishing pad when pressurized.
24. polishing pad according to claim 1 is characterized in that, described polishing element the surface distributed of described polishing pad make all described polishing elements have total pad interface area 30% to 80% between density.
25. polishing pad according to claim 1 is characterized in that, further is included in the pad wear sensor that the degree of depth that the top surface of the described polishing pad of distance records from the working end of one or more described polishing elements embeds.
26. polishing pad according to claim 25 is characterized in that, described pad wear sensor comprises the optical clear connector of the top surface with reflectance coating covering.
27. polishing pad according to claim 25 is characterized in that, described pad wear sensor is included in a plurality of optical clear connectors that the different depth place embeds in the described polishing pad.
28. polishing pad according to claim 25 is characterized in that, described pad wear sensor comprises the optical clear conical plug that flushes setting with the top surface of described polishing pad.
29. polishing pad according to claim 25 is characterized in that, described pad wear sensor comprises the optical clear connector, and described optical clear connector has the many ledge surfaces of design to expose in various degree along with described polishing pad wearing and tearing.
30. polishing pad according to claim 25 is characterized in that, described pad wear sensor comprises the optical clear connector, and described optical clear connector comprises and has the filter that different degree of transmission are set according to the reflectivity order.
31. polishing pad according to claim 25 is characterized in that, described pad wear sensor comprises electrochemical sensor, and described electrochemical sensor comprises a plurality of probes that are embedded in the described polishing pad.
32. polishing pad according to claim 25 is characterized in that, described pad wear sensor is included in the conductive plate that a degree of depth place of the top surface below of described polishing pad embeds.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61694404P | 2004-10-06 | 2004-10-06 | |
| US60/616,944 | 2004-10-06 | ||
| US60/639,257 | 2004-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101048260A CN101048260A (en) | 2007-10-03 |
| CN100513082C true CN100513082C (en) | 2009-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800371585A Expired - Fee Related CN100513082C (en) | 2004-10-06 | 2005-10-05 | Method and apparatus for improved chemical mechanical planarization |
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| CN (1) | CN100513082C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102393445B1 (en) * | 2017-10-04 | 2022-05-03 | 생-고뱅 어브레이시브즈, 인코포레이티드 | Abrasive articles and methods of forming same |
| CN111195852B (en) * | 2018-11-19 | 2021-11-23 | 江苏鲁汶仪器有限公司 | Device and method for polishing dense device side wall in direction parallel to device side wall |
| CN110421479B (en) * | 2019-07-19 | 2021-01-26 | 许昌学院 | Semiconductor wafer polishing equipment for electronic device |
| CN110877287A (en) * | 2019-12-10 | 2020-03-13 | 上海华力微电子有限公司 | Grinding system |
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2005
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| Publication number | Publication date |
|---|---|
| CN101048260A (en) | 2007-10-03 |
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