CN100510661C - Reflexion indium gallium arsenide trap radiation detector - Google Patents
Reflexion indium gallium arsenide trap radiation detector Download PDFInfo
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- CN100510661C CN100510661C CNB2007100204028A CN200710020402A CN100510661C CN 100510661 C CN100510661 C CN 100510661C CN B2007100204028 A CNB2007100204028 A CN B2007100204028A CN 200710020402 A CN200710020402 A CN 200710020402A CN 100510661 C CN100510661 C CN 100510661C
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- indium gallium
- gallium arsenic
- photodiode
- photodiodes
- reflexion
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Abstract
This invention discloses one reflection indium gallium arsenic well irradiation detector, which comprises three slices of photo electricity diode, which is characterized by the following: the said diode is of the element diode with three diodes to form well; the said three diodes front end is connected to the negative end of computer and the diode negative end is connected to computer front end with resistance branch. This invention detector uses diodes with certain structure for ranking to make incidence light for multiple reflection and to absorb single surface reflection rate.
Description
Technical field
The invention belongs to the absolute precision measurement apparatus of near infrared light radiation, specifically is a kind of reflexion indium gallium arsenide trap radiation detector.
Background technology
Up to the present, all is the absolute measurement that realizes optical radiation with blackbody radiator or absolute radiometer usually, the uncertainty that this technology can reach has only the level of ppt usually; Use low temperature (liquid helium) absolute radiometer then can reach the highest uncertainty at present, be about 2/10000ths, but apparatus expensive, volume is big, and Heavy Weight uses very inconvenient; And adopt with the big bin indium of high-performance gallium arsenic photodiode is the explorer response bin, and discharge road before reasonable in design, and its simplicity and uncertainty all are greatly improved.
Usually, as optical detector, all be to adopt a slice indium gallium arsenic photodiode to add that preposition light path constitutes with indium gallium arsenic photodiode.Because the intrinsic character of surface of monolithic indium gallium arsenic photodiode makes so (in light beam normal incidence between the miter angle incident, its surface reflectivity has 1-5% variation), if the beam incident angle of measuring can not be consistent with the incident angle of calibration, will the energy loss that cause be also different because of the difference of reflection, thus make the precise decreasing of measurement and do not reach modern high precision ray radiation Testing requirement.
Measure for modern near infrared high precision radiation, the accuracy that conventional method can reach can not meet the demands in a lot of applications; Though the low temperature absolute radiometer can provide the highest accuracy at present, but its fancy price (more than 100,000 dollars) and complicated operational process and high operating cost, its widespread use is greatly limited, and usually just the first grade standard as a radiant quantity is used.
Summary of the invention
In order to improve the precision that near-infrared radiation measures and the facility of application, the purpose of this invention is to provide the radiation detector that a kind of common indium gallium arsenic photodiode constitutes.
Technical scheme of the present invention is as follows:
Reflexion indium gallium arsenide trap radiation detector, include three photodiodes, it is characterized in that described photodiode is an indium gallium arsenic photodiode, three indium gallium arsenic photodiodes constitute light trapping, described three indium gallium arsenic photodiode anodes also are connected to the negative terminal of an operational amplifier, the negative terminal of three indium gallium arsenic photodiodes and the equal ground connection of anode of operational amplifier are connected to negative-feedback circuit between the negative terminal of operational amplifier and the output terminal of operational amplifier.
Described reflexion indium gallium arsenide trap radiation detector, it is characterized in that described light trapping structure is: wherein two indium gallium arsenic photodiodes are all perpendicular to same plane, and its test surface each other in angle of 45 degrees, another sheet indium gallium arsenic photodiode becomes miter angle with aforementioned plane, and its test surface is relative with other test surface of two indium gallium arsenic photodiodes.
The present invention uses three plate plane type indium gallium arsenic photodiodes, make according to the mirror reflection principle and to incide first reflected light on the indium gallium arsenic photodiode and get to second indium gallium arsenic photodiode, reflected light on second indium gallium arsenic photodiode is got on the 3rd indium gallium arsenic photodiode again, and the reflected light on the 3rd indium gallium arsenic photodiode follows Yuan Lu again and turns back on second indium gallium arsenic photodiode and get on first indium gallium arsenic photodiode at the reflected light that produces on second indium gallium arsenic photodiode thus again.Like this, on every indium gallium arsenic photodiode,, reflection will be received by its next piece indium gallium arsenic photodiode because of losing part light, and the like.Principle is as follows.
In single diode, have:
I
ph＝η(λe/hc)·P
So in this structure, have:
I
ph＝[η
1(1-ρ
1)+η
2ρ
2(1-ρ
1)+η
3ρ
1ρ
2(1-ρ
3)+η
2ρ
1ρ
2ρ
3(1-ρ
2)+
η
1ρ
1ρ
2ρ
2ρ
3(1-ρ
1)]·(λe/hc)·P
Wherein: I
fBe photogenerated current; P is an incident optical power; λ is a lambda1-wavelength; The h:Plank constant; C: vacuum light speed;
η
1, η
2, η
3Be respectively the internal quantum efficiency of 1#, 2#, 3#;
ρ
1, ρ
2Be the reflectivity of incident angle 1#, 2# when being 45 °, ρ
3The reflectivity of 3# during for vertical incidence.
In order to see (being the diode of same kind in fact) η easily clearly owing to what use
1, η
2, η
3Basic identical, can think approx that they equate, for ρ
1, ρ
2, ρ
3Think that also they equate that then following formula can be reduced to:
I
ph＝η(1-ρ
5)(λe/hc)·P
So just formed a light trapping, consequently be equivalent to greatly reduce the surface reflectivity of monolithic indium gallium arsenic photodiode, simultaneously, this three-chip type structure also can reduce the polarization sensitivity of single device to radiation, and the surface reflectivity that promptly reduces indium gallium arsenic photodiode detector spare to greatest extent causes that because of the difference of incident angle changes with polarization sensitivity radiometric uncertain factor increases.
Detector of the present invention uses three indium gallium arsenic photodiodes to arrange with certain structure, make incident optical energy repeatedly reflect therein with absorbing and be equivalent to monolithic indium gallium arsenic photodiode surface reflectivity, thereby the surface reflectivity that reduces indium gallium arsenic photodiode detector spare greatly causes that because of the difference of incident angle changes with polarization sensitivity radiometric uncertain factor increases with reduction.
The effect of invention
Through Performance Detection, radiation detector of the present invention in radiation calibration, have good performance, its overall uncertainty is a per mille.
Description of drawings
Fig. 1 is a light trapping structural representation of the present invention.
Fig. 2 is the equivalent circuit diagram of detector.
Embodiment
Structure of the present invention is seen Fig. 1, Fig. 2.Expression constitutes light trapping by three indium gallium arsenic photodiodes 1 among Fig. 1.
The circuit equivalent figure that promptly represents detector among Fig. 2.The detector of this structure is combined with a high precision I/V translation circuit, its responsiveness is calibrated, can constitute a high-precision laser power radiometer by the low temperature absolute radiometer.Carry out bracketing, its uncertainty such as following table at 2 wavelength of near infrared
In 1260nm and 944nm and low temperature radiometer comparison test findings
| Wavelength (nm) | Power measurement uncertainty U * 10 -5 | Window transmitance U * 10 -5 | Non-equivalent factor U * 10 -5 | Overall uncertainty U * 10 -5 |
| 944 | 0.88 | 3.004 | 5.1951 | 6.065 |
| 1260 | 13.5 | 3.004 | 5.1951 | 14.77 |
The laser power radiometer absolute spectral response rate calibration result of 3 trap structures
Test Summary, with this radiometer measurement laser power, near infrared can be less than 2/1000ths uncertainty.
Claims (1)
1, reflexion indium gallium arsenide trap radiation detector, include three photodiodes, it is characterized in that described photodiode is an indium gallium arsenic photodiode, three indium gallium arsenic photodiodes constitute light trapping, wherein two indium gallium arsenic photodiodes are all perpendicular to same plane, and its test surface is each other in angle of 45 degrees, another sheet indium gallium arsenic photodiode and aforementioned plane in angle of 45 degrees, its test surface is relative with other test surface of two indium gallium arsenic photodiodes; Described three indium gallium arsenic photodiode anodes also are connected to the negative terminal of an operational amplifier, the negative terminal of three indium gallium arsenic photodiodes and the equal ground connection of anode of operational amplifier are connected to negative-feedback circuit between the negative terminal of operational amplifier and the output terminal of operational amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100204028A CN100510661C (en) | 2007-02-14 | 2007-02-14 | Reflexion indium gallium arsenide trap radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100204028A CN100510661C (en) | 2007-02-14 | 2007-02-14 | Reflexion indium gallium arsenide trap radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101017110A CN101017110A (en) | 2007-08-15 |
| CN100510661C true CN100510661C (en) | 2009-07-08 |
Family
ID=38726259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100204028A Expired - Fee Related CN100510661C (en) | 2007-02-14 | 2007-02-14 | Reflexion indium gallium arsenide trap radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100510661C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106018274A (en) * | 2016-05-16 | 2016-10-12 | 天津优可信科技有限公司 | Device for absorbing transmission light during turbidity measurement |
| CN106768317B (en) * | 2016-11-14 | 2018-10-12 | 中国电子科技集团公司第四十一研究所 | A kind of caliberating device and method of single-photon detector detection efficient |
| CN113418600B (en) * | 2021-06-21 | 2022-06-21 | 中国电子科技集团公司第四十一研究所 | Optical fiber type short wave infrared light trap detector and detection method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989972A (en) * | 1989-05-01 | 1991-02-05 | Hewlett-Packard Company | Low reflectivity surface relief gratings for photodetectors |
| CN1708983A (en) * | 2002-11-07 | 2005-12-14 | 克塞尼克斯股份有限公司 | Read-out circuit for infrared detectors |
-
2007
- 2007-02-14 CN CNB2007100204028A patent/CN100510661C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4989972A (en) * | 1989-05-01 | 1991-02-05 | Hewlett-Packard Company | Low reflectivity surface relief gratings for photodetectors |
| CN1708983A (en) * | 2002-11-07 | 2005-12-14 | 克塞尼克斯股份有限公司 | Read-out circuit for infrared detectors |
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| Publication number | Publication date |
|---|---|
| CN101017110A (en) | 2007-08-15 |
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