CN109950165A - Test structure and test method - Google Patents
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- CN109950165A CN109950165A CN201910122181.8A CN201910122181A CN109950165A CN 109950165 A CN109950165 A CN 109950165A CN 201910122181 A CN201910122181 A CN 201910122181A CN 109950165 A CN109950165 A CN 109950165A
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Abstract
This application discloses a kind of test structure and test method, the test structure includes semiconductor substrate；Pattern characteristics with side, the pattern characteristics are formed on the semiconductor substrate；And measurement markers, the measurement markers are located in the semiconductor substrate and adjacent with the side of the pattern characteristics, wherein, the measurement markers are the shape of axial symmetry polygon, the first subregion and the second subregion including being located at the two sides of symmetry axis, wherein, the distance value of the symmetry axis of the measurement markers and the pattern characteristics characterizes the departure of the pattern characteristics, judge whether the measurement markers deform as form parameter perpendicular to the size of the symmetry axis according to first subregion and second subregion, to which the measurement result of the departure to the pattern characteristics verifies.The measurement markers verify measurement result according to form parameter, so as to improve the measurement accuracy of departure.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, to a kind of test structure and test method.
Background technique
The preparation process of semiconductor devices includes multiple thin film deposition steps and patterning step.Patterning for example including
The surface of film forms resist layer, and resist layer is formed mask pattern using photoetching and development, is etched via mask pattern
Film, to form pattern characteristics in film.
The resolution ratio of photoetching is the determinant of the critical dimension of pattern characteristics.The exposure of deep ultraviolet (DUV) photoresist
Under the light of 248nm, the minimum critical dimension that may be implemented is 230-250nm.Since optical characteristics depends on wavelength, thus expose
The wavelength of radiant is smaller, and the critical dimension of pattern characteristics obtained is smaller.
In three-dimensional storage part, to the pattern characteristics for patterning formation for the laminated construction that conductor layer and insulating layer form
E.g. grid line gap and channel hole, the pattern characteristics formed to the patterning of single insulating layer or insulating laminate are, for example, conduction
Access opening, the pattern characteristics formed to the patterning of single conductor layer or conductor lamination are, for example, pad.
The raising of the storage density of memory device and the progress of semiconductor fabrication process are closely related.With pattern characteristics
Critical dimension (critical dimension, be abbreviated as CD) is smaller and smaller, and the storage density of memory device is higher and higher.It is three-dimensional
Memory device includes the multiple storage units stacked along vertical direction, and collection can be doubled up on the chip of unit area
Cheng Du, and cost can be reduced.
The size of large scale pad (giant block pad, be abbreviated as GB) in three-dimensional storage part is millimeter magnitude.
It needs to measure the departure of pad in preparation process, however, the departure is nanometer scale, directly measures the size of pad
It cannot play the role of measured deviation amount.Alternatively, the measurement markers of small size are set near large-sized pad, using survey
The distance between symmetry axis and pad edge of label is measured as measurement parameter to characterize departure.
Summary of the invention
The purpose of the present invention is to provide a kind of test structure and test methods, wherein test structure includes characteristic pattern
And measurement markers, measurement markers are axial symmetry polygon, are verified according to the form parameter of measurement markers to measurement result, from
And the measurement accuracy of departure can be improved.
According to the first aspect of the invention, a kind of test structure is provided, comprising:
Semiconductor substrate；
Pattern characteristics with side, the pattern characteristics are formed on the semiconductor substrate；And
Measurement markers, the measurement markers be located at it is in the semiconductor substrate and adjacent with the side of the pattern characteristics,
Wherein, the measurement markers are the shape of axial symmetry polygon, the first sub-district of the two sides including being located at symmetry axis
Domain and the second subregion, wherein it is special that the distance value of the symmetry axis of the measurement markers and the pattern characteristics characterizes the pattern
The departure of sign is joined perpendicular to the size of the symmetry axis as shape according to first subregion and second subregion
Number judges whether the measurement markers deform, to verify to the measurement result of the departure of the pattern characteristics.
Preferably, the axial symmetry polygon is in four side diamond shapes, pentagon, hexagon, heptagon and octagon
It is any, the symmetry axis by the axial symmetry polygon vertex or equal part described in axial symmetry polygon side.
Preferably, first subregion and second subregion are respectively the spirte of the axial symmetry polygon.
Preferably, the shape of first subregion and second subregion be selected from triangle and it is trapezoidal in any
Kind, first subregion and second subregion perpendicular to the size of the symmetry axis are the triangle or described trapezoidal
Height.
Preferably, using first subregion and second subregion perpendicular to the ratio of the size of the symmetry axis
Value, is modified the distance value.
Preferably, the top that the measurement markers are crossed to form close to two adjacent sides of the pattern characteristics
Angle.
Preferably, two side sides point in several apex angles of the pattern characteristics, where each apex angle
It is not formed with the measurement markers, according to the form parameter pair of multiple measurement markers around multiple apex angles
The measurement result of the departure is verified.
Preferably, the pattern characteristics are pad.
According to the second aspect of the invention, a kind of test method is provided, comprising:
Form the measurement markers adjacent with pattern characteristics；
Measure the distance between the symmetry axis of the measurement markers and the side of the pattern characteristics value；
The departure of the pattern characteristics is obtained according to the distance value；
Obtain the form parameter of the measurement markers；And
It is verified according to measurement result of the form parameter to the departure,
Wherein, the measurement markers are adjacent with the pattern characteristics and are the shape of axial symmetry polygon, the measurement
Label includes the first subregion and the second subregion positioned at the two sides of symmetry axis, according to first subregion and described second
Subregion judges whether the measurement markers deform as form parameter perpendicular to the size of the symmetry axis, thus to institute
The measurement result for stating departure is verified.
Preferably, the axial symmetry polygon is in four side diamond shapes, pentagon, hexagon, heptagon and octagon
It is any, the symmetry axis by the axial symmetry polygon vertex or equal part described in axial symmetry polygon side.
Preferably, the shape of first subregion and second subregion be selected from triangle and it is trapezoidal in any
Kind, first subregion and second subregion perpendicular to the size of the symmetry axis are the triangle or described trapezoidal
Height.
Preferably, between the step of measuring distance value and the step of obtaining departure, further includes: using first son
Region and second subregion are modified the distance value perpendicular to the ratio of the size of the symmetry axis.
Preferably, the top that the measurement markers are crossed to form close to two adjacent sides of the pattern characteristics
Angle.
Preferably, two side sides point in several apex angles of the pattern characteristics, where each apex angle
The measurement markers are not formed with, with the measurement knot according to the form parameter of multiple measurement markers to the departure
Fruit is verified.
Test structure according to an embodiment of the present invention can provide form parameter using the measurement markers of axial symmetry polygon
For being verified and being corrected to measurement result.For example, the shape of measurement markers no longer maintains when measurement markers deform
Axisymmetric shape may determine that whether measurement result is accurate according to the form parameter of measurement markers.The measurement method uses axis pair
Claim the distance between the symmetry axis of the measurement measurement markers of polygon and the side of pattern characteristics characterization departure.Since measurement is marked
The shape orientation of note and the shape orientation of pattern characteristics are not exactly the same, therefore, if having occurred and that the measurement markers of deformation not
Axisymmetric shape is maintained again, the deformation of measurement markers can be observed in measurement, can also find that measurement data is inaccurate
True problem.It further, can be with corrected range value, to obtain accurate departure according to the form parameter of measurement markers
Measurement result.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows pattern characteristics and measurement markers schematic diagram in semiconductor devices according to prior art.
Fig. 2 a and 2b show influence schematic diagram of the measurement markers of Fig. 1 when deforming to measurement result.
Fig. 3 a shows the schematic diagram of the test structure in semiconductor devices according to an embodiment of the present invention.
Fig. 3 b shows the enlarged drawing of the measurement markers 222 in the test structure according to shown in Fig. 3 a.
Fig. 3 c shows the schematic diagram of another embodiment of the measurement markers 222 in the test structure according to shown in Fig. 3 a.
Fig. 4 a and 4b show the measurement markers in the test structure of Fig. 3 a and show when deforming the influence of measurement result
It is intended to.
Fig. 5 shows form parameter of the measurement markers shown in Fig. 3 a when deforming.
Fig. 6 shows the flow chart of test method according to an embodiment of the present invention.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.
Fig. 1 shows pattern characteristics and measurement markers schematic diagram in semiconductor devices according to prior art.
As shown, pattern characteristics 110 are formed on a semiconductor substrate 100, which is, for example, rectangular shape
Large scale pad (GB pad), length direction and width direction extend respectively along x-axis and y-axis.The side of the pattern characteristics 110
Side is intersected two-by-two, forms four apex angles.
Measurement markers also are located in semiconductor substrate 100, and adjacent with pattern characteristics 110, such as Fig. 1, in pattern characteristics 110
The first apex angle be formed about the label 121 (measurement markers) and with second side adjacent label adjacent with first side
122 (measurement markers) are formed about the adjacent label 123 (measurement markers) in third side in the second apex angle of pattern characteristics 110
And the adjacent label 124 (measurement markers) on four side.The shape of label 121 to 124 is respectively rectangle.Label 121
Length direction with 123 extends respectively along the direction y, and the distance between adjacent side is respectively x1 and x2, distance characterization
Departure of the pattern characteristics 110 in x-axis direction.The length direction of label 122 and 124 extends respectively along the direction x, with sides adjacent
The distance between side is respectively y1 and y2, which characterizes pattern characteristics 110 in the departure in y-axis direction.
In the semiconductor device, the size of large scale pad (giant block pad, be abbreviated as GB) is millimeter magnitude.
Use the distance between symmetry axis and pad edge of measurement markers as measurement parameter to characterize departure, due to measurement markers
It is micron level, it is possible to symbolize the other departure of grade.
Fig. 2 a and 2b show influence schematic diagram of the measurement markers of Fig. 1 when deforming to measurement result.It marks in the figure
Note 121 is adjacent with the side of pattern characteristics 110, and is located at pattern characteristics 110 in semi-conductive substrate 100, and label 121 arrives
The distance of pattern characteristics 110 illustrates that measurement markers deform as example and ties to measurement for characterizing x-axis direction departure x1
The influence of fruit.
The inventors discovered that the label using rectangular shape can be smaller (for example, being stacked into 64 layers for stacking number
Storage unit) three-dimensional storage part obtain accurate measurement result, the symmetry axis of label 121 is adjacent with pattern characteristics 110
The distance between side is x11, as shown in Figure 2 a.As the stacking number of three-dimensional storage increases to 128 layers, etch process
The step appearance of middle generation also can be stacked successively, cause the surface smoothness of semiconductor structure poor, and measurement markers itself can also be sent out
Change shape.Label 121 shrinks deformation along the y-axis direction to change the position of symmetry axis, the symmetry axis and figure of label 121
The distance between adjacent side of pattern characteristics 110 is x12, as shown in Figure 2 b.Therefore, because the deviation of symmetry axis, the distance
Measured value is x12 from x11 variation, and the rectangular shape so as to cause the measurement deviation true value label of distance does not provide shape
Parameter is for being verified and being corrected to measurement result.
The measurement method is using the distance between the symmetry axis of the measurement markers of rectangular shape and the side of pattern characteristics table
Levy departure.Since the shape orientation of label and the shape orientation of pattern characteristics are corresponding, have occurred and that the measurement of deformation
Label still maintains rectangular shape, and the deformation of measurement markers is difficult to observe by measurement, is also just difficult to find measurement data not
Accurate problem.
Fig. 3 a shows the schematic diagram of the test structure in semiconductor devices according to an embodiment of the present invention.Fig. 3 b shows basis
The enlarged drawing of measurement markers 222 in test structure shown in Fig. 3 a.
As shown in Figure 3a, the test structure of the present embodiment includes pattern characteristics 110 and multiple measurement markers, pattern characteristics
110 are formed in semiconductor substrate 100, and including multiple sides, for example, rectangular pads.According to the pattern characteristics of the present embodiment
Identical as feature shown in FIG. 1, this will not be detailed here, below main description distinguishing characteristics related with measurement markers.This implementation
In example, measurement markers are located in semiconductor substrate 100, and adjacent with the side of pattern characteristics 110, and measurement markers are at least partly wrapped
Enclose multiple sides of pattern characteristics 110, it is preferable that measurement markers intersect shape close to two adjacent sides of pattern characteristics 110
At apex angle.For example, in the present embodiment, pattern characteristics 110 include four sides, all adjacent measurement mark in every side
Note is formed about the label 221 (measurement markers) adjacent with first side in the first apex angle of pattern characteristics 110 and with second
The adjacent label 222 (measurement markers) in side is formed about the adjacent label in third side in the second apex angle of pattern characteristics 110
223 (measurement markers) and the label 224 (measurement markers) adjacent on four side.
The shape of label 221 to 224 is respectively axial symmetry polygon, such as four in diamond shape, pentagon, hexagon, eight
Shape.Symmetry axis etc. divides the side relative to each other of polygon, such as symmetry axis to pass through the vertex of axial symmetry polygon or wait split axles
The side of symmetric polygonal.
Measurement markers include the first subregion and the second subregion positioned at the two sides of symmetry axis, the first subregion and second
The shape of subregion is flat selected from triangle and any one of trapezoidal, triangle or trapezoidal bottom edge and the side of pattern characteristics
The size of row, the first subregion and the second subregion is triangle or trapezoidal height.As shown in Figure 3b, by taking label 222 as an example
Illustrate, label 222 is the shape of zhou duicheng tuxing, the first subregion 2221 and the second subregion including being located at symmetry axis two sides
2222, the first subregion 2221 and the second subregion 2222 are trapezoidal.First subregion 2221 and the second subregion 2222 it
Between there are one rectangle, three spirtes collectively form the polygon of label 222.When only trapezoidal 2221 He of the first subregion
When the second subregion 2222, the first subregion and the second subregion are trapezoidal height perpendicular to the size of symmetry axis.
The symmetry axis of label 221 and 223 respectively along the direction y extend, the distance between adjacent side be respectively x1 and
X2, the distance characterize pattern characteristics 110 relative to reference position x-axis direction departure.The symmetry axis of label 222 and 224
Extend respectively along the direction x, the distance between adjacent side is respectively y1 and y2, and it is opposite which characterizes pattern characteristics 110
In departure of the reference position in y-axis direction.
Fig. 3 c shows the schematic diagram of another embodiment of the measurement markers 222 in the test structure according to shown in Fig. 3 a.
As shown in Figure 3c, label 222 ' is the shape of zhou duicheng tuxing, the first subregion including being located at symmetry axis two sides
2221 ' and second subregion 2222 ', the first subregion 2221 ' and the second subregion 2222 ' are triangle, and label 222 ' is
Hexagon.It may determine that the accurate of the departure of measurement according to the deformation of the first subregion 2221 ' and the second subregion 2222 '
Property.
In the semiconductor device, the size of large scale pad (giant block pad, be abbreviated as GB) is millimeter magnitude.
Use the distance between symmetry axis and pad edge of the measurement markers of measurement micron dimension as measurement parameter to characterize deviation
Amount, can characterize the departure of nanometer scale.
Fig. 4 a and 4b show the measurement markers in the test structure of Fig. 3 a and show when deforming the influence of measurement result
It is intended to.Label 221 is adjacent with the side of pattern characteristics 110 in the figure, for characterizing x-axis direction departure x1, says as example
The influence that bright measurement markers deform to measurement result.
It can be smaller (for example, the storage unit for being stacked into 64 layers) for stacking number using the label of axial symmetry polygon
Three-dimensional storage part obtain accurate measurement result, between the symmetry axis of label 221 and the adjacent side of pattern characteristics 110
Distance is x11, as shown in fig. 4 a.With the increase of the stacking number of three-dimensional storage, the step appearance that is generated in etch process
Also it can successively stack, cause the surface smoothness of semiconductor structure poor, the number that measurement markers itself are etched, which increases, leads to it
Also it can deform, the measurement markers and GB being exposed to outside photoresist under normal circumstances can be etched simultaneously, but due to etching
When the measurement markers of side outside are completely exposed with contact in the measurement markers that gas contacts close to the side GB, in etching degree
It has a certain difference, the degree for causing measurement markers or so to be etched is different.Label 221 shrinks change along the y-axis direction
For shape to change the position of symmetry axis, the distance between the symmetry axis of label 221 and the adjacent side of pattern characteristics 110 are x12,
As shown in Figure 4 b.Therefore, because the deviation of symmetry axis, it is x12 that the measured value of the distance changes from x11.
It is different from the prior art shown in Fig. 2, form parameter, which can be provided, using the label 221 of axial symmetry polygon is used for
Measurement result is verified and is corrected.Preferably, measurement mark is judged as form parameter according to triangle or trapezoidal height
Whether note deforms, so that the measurement result to departure verifies.For example, when label 221 deforms, label
221 shapes no longer maintain axisymmetric shape.May determine that whether measurement result is accurate according to the form parameter of label 221.It is preferred that
Ground, in several apex angles of all apex angles of pattern characteristics 110, two sides side where each apex angle is respectively formed with measurement
Label, to be verified according to the form parameter of multiple measurement markers around multiple apex angles to the measurement result of departure.This
It is the judgement for having chosen 4 measurement markers (label 221 to 224) around two apex angles and measuring result in embodiment.
The measurement method using axial symmetry polygon the symmetry axis of measurement markers and the side of pattern characteristics between away from
From characterization departure.Since the shape orientation of label and the shape orientation of pattern characteristics are not exactly the same, have occurred and that change
The measurement markers of shape no longer maintain axisymmetric shape, and the deformation of measurement markers can be observed in measurement, can also be sent out
The problem of existing measurement data inaccuracy.It further, can be with corrected range value, to obtain according to the form parameter of label 221
Obtain accurate deviation measurements.
Fig. 5 shows form parameter of the measurement markers shown in Fig. 3 a when deforming.As shown, label 221 is for example
For axisymmetric octagon, wherein the octagonal side relative to each other of symmetry axis equal part.As described above, the orientation of label 221
So that the adjacent side of symmetry axis and pattern characteristics 110 is parallel to each other.
Label 221 is used to characterize the departure of x-axis direction.When label 221 deforms, shape cannot maintain axial symmetry
Shape.The deformed shape of label 221 can be understood as the rectangle and two sides combined along the x-axis direction two are trapezoidal.
In this embodiment, select two trapezoidal height a and b as form parameter.The short transverse along the x-axis direction, therefore can
To characterize deformation along the x-axis direction.For example, judge whether measurement markers 221 deform according to whether a and b is equal in measurement,
To be verified to measurement result.Further, the position of symmetry axis is corrected with corrected range value according to the ratio of a/b, from
And obtain accurate deviation measurements.
Fig. 6 shows pattern characteristics measuring method flow chart according to an embodiment of the present invention.The method comprising the steps of S01 is extremely
S06 is the test method carried out based on test structure mentioned above.
In step S01, the measurement markers adjacent with pattern characteristics are formed.The shape of measurement markers is that axial symmetry is polygon
Shape, such as four side diamond shapes, pentagon, hexagon, octagon, the side relative to each other of polygon described in symmetry axis equal part.It surveys
The symmetry axis for measuring label is for example parallel with the adjacent side of pattern characteristics.
In step S02, the distance between the symmetry axis of measurement markers and the side of pattern characteristics are measured.In the implementation
In example, the apex angle that measurement markers are crossed to form close to two adjacent sides of pattern characteristics, and the center line of measurement markers is
Symmetry axis.The symmetry axis of measurement markers and the side of pattern characteristics are parallel, and distance characterization between the two is hung down along with symmetry axis
Histogram to departure.
In step S03, the form parameter of measurement markers is obtained.In this embodiment, in the symmetry axis of measurement markers two
Side chooses symmetrical two sub-regions (such as trapezoidal or triangle), using two sub-regions along with symmetry axis vertical direction
Height a and b as form parameter.
In step S04, judge whether to deform according to the form parameter of measurement markers.In this embodiment, if
The height a and b of two sub-regions of measurement markers are equal, then it is assumed that measurement markers in symmetry axis vertical direction there is no
Deformation further executes step S06.If the height a and b of two sub-regions of measurement markers are unequal, then it is assumed that measurement mark
Note is executing step S05 and S06 with deformation, progress is had occurred and that in symmetry axis vertical direction.It therefore, can be with according to form parameter
Measurement result is verified.
Preferably, in several apex angles of pattern characteristics, two sides side where each apex angle is respectively formed with measurement
Label, to be verified according to the form parameter of multiple measurement markers around multiple apex angles to the measurement result of departure.
In step S05, it is modified according to the form parameter of measurement markers value of adjusting the distance.If two of measurement markers
The height a and b of subregion are unequal, then according to the position of the ratio of a/b amendment symmetry axis with corrected range value, to obtain standard
True distance value.
In step S06, according to verified with modified distance value, obtain accurate departure.
In the above description, the technical details such as patterning, the etching of each layer are not described in detail.But
It is it will be appreciated by those skilled in the art that can be by various technological means, come layer, the region etc. for forming required shape.In addition,
In order to form same structure, those skilled in the art be can be devised by and process as described above not fully identical side
Method.In addition, although respectively describing each embodiment above, but it is not intended that the measure in each embodiment cannot have
It is used in combination sharply.
The embodiment of the present invention is described above.But these embodiments are solely for the purpose of illustration, and simultaneously
It is non-in order to limit the scope of the invention.The scope of the present invention is limited by appended claims and its equivalent.The present invention is not departed from
Range, those skilled in the art can make a variety of alternatives and modifications, these alternatives and modifications should all fall in model of the invention
Within enclosing.
Claims (12)
1. a kind of test structure, comprising:
Semiconductor substrate；
Pattern characteristics with side, the pattern characteristics are formed on the semiconductor substrate；And
Measurement markers, the measurement markers be located at it is in the semiconductor substrate and adjacent with the side of the pattern characteristics,
Wherein, the measurement markers be axial symmetry polygon shape, including be located at symmetry axis two sides the first subregion and
Second subregion, wherein the distance value of the symmetry axis of the measurement markers and the pattern characteristics characterizes the pattern characteristics
Departure is sentenced perpendicular to the size of the symmetry axis as form parameter according to first subregion and second subregion
Whether the measurement markers of breaking deform, to verify to the measurement result of the departure of the pattern characteristics.
2. test structure according to claim 1, wherein the axial symmetry polygon be selected from four side diamond shapes, pentagon,
Any one of hexagon, heptagon and octagon, vertex or equal part institute of the symmetry axis by the axial symmetry polygon
State the side of axial symmetry polygon.
3. test structure according to claim 1, wherein the shape of first subregion and second subregion is
Selected from triangle and any one of trapezoidal, the ruler of first subregion and second subregion perpendicular to the symmetry axis
Very little is the triangle or the trapezoidal height.
4. test structure according to claim 1, wherein the measurement markers are adjacent close to two of the pattern characteristics
The apex angle that is crossed to form of the side.
5. test structure according to claim 4, wherein in several apex angles of the pattern characteristics, each apex angle
The side side of two of place is respectively formed with the measurement markers, according to multiple described around multiple apex angles
The form parameter of measurement markers verifies the measurement result of the departure.
6. test structure according to claim 1, wherein the pattern characteristics are pad.
7. a kind of test method, comprising:
Form the measurement markers adjacent with pattern characteristics；
Measure the distance between the symmetry axis of the measurement markers and the side of the pattern characteristics value；
The departure of the pattern characteristics is obtained according to the distance value；
Obtain the form parameter of the measurement markers；And
It is verified according to measurement result of the form parameter to the departure,
Wherein, the measurement markers are adjacent with the pattern characteristics and are the shape of axial symmetry polygon, the measurement markers
The first subregion and the second subregion including being located at the two sides of symmetry axis, according to first subregion and second sub-district
Domain judges whether the measurement markers deform as form parameter perpendicular to the size of the symmetry axis, thus to described inclined
The measurement result of residual quantity is verified.
8. test method according to claim 7, wherein the axial symmetry polygon be selected from four side diamond shapes, pentagon,
Any one of hexagon, heptagon and octagon, vertex or equal part institute of the symmetry axis by the axial symmetry polygon
State the side of axial symmetry polygon.
9. test method according to claim 7, wherein the shape of first subregion and second subregion is
Selected from triangle and any one of trapezoidal, the ruler of first subregion and second subregion perpendicular to the symmetry axis
Very little is the triangle or the trapezoidal height.
10. test method according to claim 7, in the step of measuring distance value and the step of obtain departure between,
Further include: use first subregion and second subregion perpendicular to the ratio of the size of the symmetry axis, to described
Distance value is modified.
11. test method according to claim 7, wherein two phases of the measurement markers close to the pattern characteristics
The apex angle that the adjacent side is crossed to form.
12. test method according to claim 11, wherein in several apex angles of the pattern characteristics, each top
Two side sides where angle are respectively formed with the measurement markers, according to the shape of multiple measurement markers
Shape parameter verifies the measurement result of the departure.
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| CN204102865U (en) * | 2014-10-09 | 2015-01-14 | 中芯国际集成电路制造(北京)有限公司 | A kind of to locating tab assembly structure |
| CN106847822A (en) * | 2017-03-08 | 2017-06-13 | 长江存储科技有限责任公司 | 3D nand memories part, manufacture method and step calibration method |
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