CN109900634B - Reliability monitoring method for lead bonding process - Google Patents
Reliability monitoring method for lead bonding process Download PDFInfo
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- CN109900634B CN109900634B CN201910141627.1A CN201910141627A CN109900634B CN 109900634 B CN109900634 B CN 109900634B CN 201910141627 A CN201910141627 A CN 201910141627A CN 109900634 B CN109900634 B CN 109900634B
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Abstract
The invention discloses a method for monitoring the reliability of a wire bonding process, which belongs to the technical field of precision welding and utilizes a detection module based on a force sensor to monitor key parameters of the wire bonding process and evaluate the bonding reliability. Based on regular monitoring and data analysis, a parameter monitoring and reliability guaranteeing method for wire bonding is formed.
Description
Technical Field
The invention belongs to the technical field of precision welding, and particularly relates to a method for monitoring the reliability of a lead bonding process.
Background
Wire Bonding (Wire Bonding) is a method of using a thin metal Wire to tightly weld a metal lead and a substrate pad by using heat, pressure and ultrasonic energy, so as to realize electrical interconnection between chips and a substrate and information intercommunication between chips. Under ideal control conditions, electron sharing or atomic interdiffusion can occur between the lead and the substrate, so that atomic-scale bonding between the two metals is realized. The role of the wire bonds is to bring in and out electrical connections from the core element. Three wire bonding positioning platform technologies are commonly used in the industry: hot-pressing wire bonding, wedge-wedge ultrasonic wire bonding, and thermoacoustic wire bonding.
The lead bonding is the mainstream electronic packaging technology at present, the reliability of the lead bonding is crucial, the effective monitoring on the key process parameters of the lead bonding is insufficient, and the trouble is caused by the process development and optimization of new materials and new processes; the method for testing and evaluating the process reliability of the lead bonding is insufficient, and the method depends on special testing equipment, is complex to operate and has higher cost.
In the prior art, the detection of key process parameters of wire bonding is mostly based on the following methods:
the method comprises the following steps of combining a destructive test of special equipment with a scanning electron microscope, testing the tensile stress and the shearing force of a bonding point, observing an electron microscope picture of a section and the like to judge the effect of a wire bonding process;
monitoring parameters of a lead bonding ultrasonic transducer, monitoring impedance change in the bonding process and judging bonding failure and bonding force;
the method comprises the following steps of extracting and identifying the detailed characteristics of transducer coupling electric signals (voltage and current), selecting effective signals to evaluate the bonding quality, wherein the bonding quality comprises leadless bonding failure and bonding force prediction, but has a high misdetection rate;
the method comprises the steps of destructive force testing based on multiple sensors and multi-sensor testing based on a special circuit and a testing structure. Costly and complex.
Therefore, a method for detecting reliability of a chip package wire bonding process, which is easy to control cost and convenient to implement, is needed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an accurate and convenient firewall rule combing and synchronizing method.
The purpose of the invention is realized by the following technical scheme:
a method for detecting the reliability of a wire bonding process is characterized by comprising the following steps:
step one, a micro force sensor for measuring pressure and tension between a metal wire and a bonded surface is taken, two stepped thin film material layers are deposited on the working surface of the micro force sensor, one thin film material layer is the same as pad materials on a chip, the other thin film material layer is the same as lead frames, the lead frames are used for bearing the chip, namely the two thin film materials respectively simulate the material characteristics of two end points of an actual bonding state;
bonding two layers of film material layers on the working surface of the micro force sensor by using a lead bonding process to be detected and using a metal wire as a lead, and recording pressure and/or tension data parameters generated in the process of the lead bonding process;
and step three, respectively applying continuous pressure and/or tension to the wire bonding points on the two film material layers for testing, recording pressure and/or tension change parameter data of the wire bonding points detected by the sensor, and analyzing and evaluating according to the parameter data.
The micro force sensor is one of a piezoelectric, piezoresistive, or strain gauge force sensor.
The two thin film material layers are made of one or more of simple substances, alloys or compounds of aluminum, copper, tungsten, titanium and gold.
The two film material layers are deposited on the working surface of the micro force sensor through one or more processes of sputtering, evaporation and plating, and are processed into two stepped film material layers through a patterning process.
The two film material layers are adhered together through an adhesion layer.
In the second step, the pressure and/or tension data parameters comprise the pressure stress, the tensile stress and the acting time of the pressure stress and/or the tensile stress applied to the wire bonding point.
And in the third step, the pressure and/or tension variation parameter data comprise the pressure stress, the tensile stress and the acting time of the pressure stress and/or the tensile stress applied to the wire bonding point, and further comprise the pressure and/or tension value of the wire bonding point at the critical point of damage under continuous pressure and/or tension.
In the third step, analysis and evaluation are carried out according to the parameter data, and the analysis method comprises historical data comparison, data mining and data learning; the evaluation method comprises early warning pushing, trend analysis and process drift prevention. The purpose of analyzing and evaluating is to draw a final conclusion on the stability and reliability of the quality of the wire bonding process, so that the specific parameter data can be adopted for analysis according to the change of the standard, for example, a data analysis auxiliary system can be established based on the process parameter monitoring and reliability testing data, and if parameter drift or reliability abnormity occurs, the system software can judge and alarm; if the data has unidirectional deviation and still is in a qualified range, early warning can be sent out; the data analysis processing method can be established based on test data and belongs to big data processing application.
According to the technical scheme, the method for monitoring the reliability of the wire bonding process monitors key parameters of the wire bonding process by using the detection module based on the force sensor, and evaluates the bonding reliability. Based on regular monitoring and data analysis, a parameter monitoring and reliability guaranteeing method for wire bonding is formed. Its main advantage has: (1) accurately simulating a material scene in a lead bonding process; (2) monitoring the bonding force of all bonding points in the wire bonding process; (3) the method is directly used for testing the bonding non-damage or damage force, and is used for evaluating the bonding quality and reliability without other special detection equipment.
Drawings
The foregoing and following detailed description of the invention will be apparent from the following drawings, in which
FIG. 1 is a logic diagram of a preferred embodiment of the present invention;
in the figure:
1. a micro force sensor; 2. a thin film material layer; 3. a metal wire.
Detailed Description
The technical solutions for achieving the objects of the present invention are further illustrated by the following specific examples, and it should be noted that the technical solutions claimed in the present invention include, but are not limited to, the following examples.
Example 1
As a most basic embodiment of the invention, the invention discloses a method for detecting the reliability of a wire bonding process, which comprises the following steps:
step one, as shown in fig. 1, a micro force sensor 1 for measuring pressure and tension between a metal wire 3 and a bonded surface is taken, two stepped thin film material layers 2 are deposited on the working surface of the micro force sensor 1, wherein one thin film material layer 2 is the same as pad materials on a chip, and the other thin film material layer is the same as lead frames;
step two, as shown in fig. 1, a lead bonding process to be detected is adopted, a metal wire 3 is used as a lead to bond two layers of thin film material layers 2 on the working surface of the micro force sensor 1, and pressure and/or tension data parameters generated in the process of the lead bonding process are recorded;
and step three, respectively applying continuous pressure and/or tension to the wire bonding points on the two film material layers 2 for testing, recording pressure and/or tension change parameter data of the wire bonding points detected by the sensor, and analyzing and evaluating according to the parameter data.
Example 2
As a preferred embodiment of the present invention, a method for detecting reliability of a wire bonding process is disclosed, comprising the steps of:
(1) as shown in fig. 1, a miniature force sensor 1 capable of measuring tension and pressure is taken; the pressure means that when a lead bonding process is carried out, under the condition of certain ultrasonic energy, certain pressure needs to be applied to the bonding metal wire 3 and the bonded surface to promote the bonding process to be faster and more reliable, and the pressure is one of important parameters of the lead bonding process; the tensile force is the tensile force which can be borne between the bonding metal wire 3 and the bonded surface and is used for carrying out quantitative evaluation on the bonding reliability which needs to be evaluated after the wire bonding process is finished.
The Micro force sensor 1 can be understood as a force sensor based on a Micro Electro-Mechanical System (MEMS). The size of the force sensor is equivalent to the size of a common chip or larger than the size of the chip by 100%, and the invention mainly obtains the simulation of the working condition of the actual chip by depositing steps on the chip, so the force sensor can be larger than the actual chip. Examples of the type of selection are: GZP2009 piezoresistance pressure sensitive chip.
(2) As shown in fig. 1, two kinds of thin film materials are respectively deposited on the working surface of the micro force sensor 1, and a first step-like structure and a second step-like structure are formed, and the two kinds of thin film materials respectively correspond to and are consistent with the materials of a first bonding point and a second bonding point of a chip; the deposition can be carried out by firstly depositing a second step layer film material on the working surface of the micro force sensor 1, then depositing a first step layer film material on the second step layer film material, and then processing by a patterning process to form a step shape and a material similar to a chip. Or the first step layer material can be directly deposited on the second step layer film or deposited on the surface of the force sensor; the first step layer generally has a smaller area than the second step layer because the first step layer simulates the chip and the second step layer simulates the lead frame, and the material of the first step layer is the same as the material of the pad on the chip, and is generally aluminum; the second step layer material is the same as the material of the lead frame, typically copper.
Furthermore, an adhesion layer can be added between the two layers of film materials, and the adhesion between the two layers of film materials can be avoided because the adhesion between the two layers of film materials is better.
(3) Wire bonding is carried out on the first step structure and the second step structure, and a sensor records and outputs key force parameters of a technological process; and carrying out nondestructive or destructive force test on bonding points on the first step structure and the second step structure respectively, and evaluating the bonding quality and the process stability according to the critical force detected by the force sensor. There are two test methods for evaluating the process reliability of wire bonding: destructive and non-destructive testing. The method has the advantages that the maximum value which can be borne by a bonding process can be accurately known, and the defect is that the bonding structure needs to be damaged; in addition, if an upper limit of bearing capacity is set, the bonding point does not fail when the bonding force can be borne, the bonding process is judged to be qualified, and the method has the advantage that the reliability of the bonding structure can be judged without damaging the bonding structure.
The technological process and reliability simulation test stated in the method not only comprises materials, structures, connection modes (lead bonding) and the like, but also can simulate the technological process to the maximum extent, monitor the force parameters in the process and evaluate the reliability of the technological process, the force monitoring in the bonding process can be compressive stress, tensile stress and action time thereof, and the tensile force or pressure applied in the reliability test of a bonding point, if the force application direction forms a certain angle with the bonding surface, two component forces are respectively generated in the direction vertical to and parallel to the bonding surface, namely vertical tensile force and horizontal shearing force. When the force application direction is vertical to the bonding surface, only tension exists; when the force application direction is parallel to the bonding surface, only shear forces are present. The reliability of the wire bonding process is evaluated by adopting the direction force, and the direction force can be defined according to the application scene of the chip.
Preferably, the micro force sensor 1 may be of the piezoelectric, piezoresistive, strain gauge, or other principles; according to the reality of a simulation object, the two film materials can be simple substances, alloys or compounds of aluminum, copper, tungsten, titanium and gold; the preparation method of the two film materials can be deposition processes such as sputtering, evaporation, electroplating and the like; finally, the method for evaluating the process reliability of the lead bonding comprises early warning pushing, trend analysis, process drift prevention and the like, a data analysis auxiliary system can be established based on the process parameter monitoring and reliability testing data, and if parameter drift or reliability abnormity occurs, the data analysis auxiliary system can be judged and give an alarm through system software; if the data has unidirectional deviation and still is in a qualified range, early warning can be sent out; the data analysis processing method can be established based on test data, and belongs to common big data processing application technologies.
Claims (6)
1. A method for detecting the reliability of a wire bonding process is characterized by comprising the following steps:
step one, taking a micro force sensor (1) for measuring pressure and tension between a metal wire (3) and a bonded surface, and depositing two stepped film material layers (2) on the working surface of the micro force sensor (1), wherein one film material layer (2) is the same as a pad material on a chip, and the other film material layer is the same as a lead frame material;
bonding two layers of film material layers (2) on the working surface of the micro force sensor (1) by using a wire (3) as a lead by adopting a lead bonding process to be detected, and recording pressure and/or tension data parameters generated in the lead bonding process, wherein the pressure and/or tension data parameters comprise pressure stress, tensile stress and action time of the pressure stress and the tension stress applied to a lead bonding point;
and step three, respectively applying continuous pressure and/or tension to the wire bonding points on the two layers of film material layers (2) for testing, wherein pressure and/or tension change parameter data comprise pressure stress, tension stress and action time of the pressure stress and the tension stress applied to the wire bonding points, and also comprise pressure and/or tension values of the wire bonding points at a damaged critical point under the continuous pressure and/or tension, recording pressure and/or tension change parameter data of the wire bonding points detected by the sensor, and carrying out analysis and evaluation according to the parameter data.
2. The method of claim 1, wherein the method comprises: the micro force sensor (1) is one of a piezoelectric type, a piezoresistive type or a strain type force sensor.
3. The method of claim 1, wherein the method comprises: the two thin film material layers (2) are made of one or more of simple substances, alloys or compounds of aluminum, copper, tungsten, titanium and gold.
4. The method of claim 1, wherein the method comprises: the two film material layers (2) are deposited on the working surface of the micro force sensor (1) through one or more processes of sputtering, evaporation and electroplating, and are processed into two stepped film material layers through a patterning process.
5. The method for detecting the reliability of a wire bonding process according to claim 1 or 4, wherein: the two film material layers (2) are adhered together through an adhesion layer.
6. The method of claim 1, wherein the method comprises: in the third step, analysis and evaluation are carried out according to the parameter data, and the analysis method comprises historical data comparison, data mining and data learning; the evaluation method comprises early warning pushing, trend analysis and process drift prevention.
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| CN110504182B (en) * | 2019-08-26 | 2022-07-05 | 四川立泰电子有限公司 | System and method for detecting reliability of lead bonding |
| CN114883285B (en) * | 2022-04-19 | 2024-01-30 | 江西万年芯微电子有限公司 | Production process for developing special bonding mode of gold-deposited substrate |
| CN115064455B (en) * | 2022-07-07 | 2023-01-03 | 西安晶捷电子技术有限公司 | Gold wire bonding process method |
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| JPH11265907A (en) * | 1998-03-17 | 1999-09-28 | Kyushu Electronics System:Kk | Device and method for bonding aluminium wire |
| CN1650410A (en) * | 2002-04-29 | 2005-08-03 | 先进互联技术有限公司 | Partially patterned lead frames and methods of making and using the same in semiconductor packaging |
| CN101626008A (en) * | 2009-05-11 | 2010-01-13 | 天水华天科技股份有限公司 | Production method of encapsulated component of copper wire bonding IC chip |
| CN101968412A (en) * | 2010-10-21 | 2011-02-09 | 天津大学 | Device for measuring dynamic strain and method thereof |
| CN103471905A (en) * | 2013-09-16 | 2013-12-25 | 清华大学 | Uniaxial two-way micro mechanical measurement device and method for scanning micro environment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE50110953D1 (en) * | 2001-11-07 | 2006-10-19 | F & K Delvotec Bondtech Gmbh | Test method for bond connections and wire bonders |
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|---|---|---|---|---|
| JPH11265907A (en) * | 1998-03-17 | 1999-09-28 | Kyushu Electronics System:Kk | Device and method for bonding aluminium wire |
| CN1650410A (en) * | 2002-04-29 | 2005-08-03 | 先进互联技术有限公司 | Partially patterned lead frames and methods of making and using the same in semiconductor packaging |
| CN101626008A (en) * | 2009-05-11 | 2010-01-13 | 天水华天科技股份有限公司 | Production method of encapsulated component of copper wire bonding IC chip |
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Effective date of registration: 20221130 Address after: No. 1, Shuangxing Avenue, Huangjia Street, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu, Sichuan 610299 Patentee after: Sichuan mincheng Electronics Co.,Ltd. Address before: 629000 zone a, electronic industrial park, Suining economic and Technological Development Zone, Sichuan Province Patentee before: SICHUAN LIPTAI ELECTRONIC Co.,Ltd. |