CN109879238A - Micro-cantilever device, processing method and a kind of detection method of embedded channel-type - Google Patents
Micro-cantilever device, processing method and a kind of detection method of embedded channel-type Download PDFInfo
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Abstract
The invention discloses the micro-cantilever device of embedded channel-type, processing method and a kind of detection methods, belong to the field MEMS.Embedded channel-type micro-cantilever and traditional micro-cantilever in the present invention is different, is to form microchannel in the inside of micro-cantilever, micro-fluidic chip is integrated in micro-cantilever beam sensor.Such micro-cantilever is to be manufactured using a kind of based on the processing method of SON structure, can be formed simultaneously microchannel and cover board.Combine simultaneously with microfluidic chip technology, the separation, monitoring and detection of micro-nano particle, cell etc. may be implemented.Micro-cantilever overall structure includes: fixing end, embedded channel, the substrate in embedded channel and the cover board and the entrance and exit in embedded channel of micro-cantilever.The present invention is a kind of novel micro-cantilever, and processing method is more succinct, microfluidic chip technology is combined with micro-cantilever beam sensor technology, application field greatly increases, while detection accuracy also greatlys improve.
Description
Technical field
Present invention relates generally to the field MEMS in integrated circuit (Micro-Electro-Mechanical System),
Refer in particular to micro-cantilever device, processing method and the detection method of a kind of novel embedded channel-type.
Background technique
With the fast development of nanometer technique, a kind of novel cross discipline micro electro mechanical system (MEMS) technology-MEMS technology is obtained
Development at full speed is arrived.To generation nineteen ninety, using micropressure sensor and micro-acceleration sensor as the micro-electro-mechanical sensors of representative
By low cost, small size, high performance advantage, become the mainstream of sophisticated sensor development.More successful micro-electro-mechanical sensors,
As resonance type pressure sensor and force balance type capacitor micro-acceleration sensor all use micro cantilever structure.Micro-cantilever dress
It sets as a kind of one of simplest MEMS device, and constructs the basic unit of other complicated MEMS device, the MEMS of all
The advantages of technology, all emerges from it, to the research of micro-cantilever also more deep.
Traditional micro-cantilever beam sensor is predominantly rectangular-shaped, and one layer is bonded on the micro-cantilever skeleton of monocrystalline silicon specifically
The adsorption layer of property, using the Specific adsorption of molecule by tested Molecular Adsorption to adsorption layer, to achieve the purpose that detection molecules.
But this micro-cantilever, which is disadvantageous in that, to detect the detectable substance of liquid phase.The target of micro-fluidic chip is whole
The function in a laboratory, including sampling, dilution, reagent adding, reaction, separation, detection etc. are integrated on microchip, are current micro- complete
The emphasis of analysis system field development, but its characteristic for lacking sensing.
Application No. is a kind of " micro-cantilever for weighing DNA molecular quality is disclosed in 2016104117634 patent document
Device ", the micro-cantilever device upper layer proposed have required for weighing DNA adsorption layer, free end upper and lower sides respectively have one it is micro-
Displacement sensor adsorbs weighed DNA molecular by DNA adsorption layer, so that micro-cantilever free end is made to bend deformation,
Deformation quantity is detected by micro-displacement sensor again.But processing of this micro-cantilever device on DNA molecular adsorption layer is excessively
It is cumbersome, and DNA molecular adsorption layer adsorption of DNA molecule is easy to appear error, the detection accuracy of micro-displacement sensor is not high enough, is easy
Generate biggish error.
Summary of the invention
In order to which the function of micro-fluidic chip and micro-cantilever sensing characteristics to be combined into one, a kind of novel embed has been invented
Channel-type silicon micro-cantilever.It include: fixing end 102, the embedded channel 105, the substrate 104 and cover board for embedding channel of micro-cantilever
103 and embedded channel microfluidic inlet 101 and microfluidic outlet port 100.It wherein embeds channel and cover board is structure as a whole.
Micro- beam can be processed with array, be used separately as test beam and with reference to beam.The Liang Kewei uniform beam can also be non-uniform beam.It removes
It is cantilever beam structure, can also is double branch girder constructions.The separation of microfluid, detection may be implemented in the micro-cantilever；Micro-nano particle
Quality testing；Quality testing and the monitoring of upgrowth situation of biological cell etc..
It is another object of the present invention to provide a kind of processing methods of embedded channel-type micro-cantilever.Using SOI
(Silicon On Insulator) wafer processes embedded channel-type micro-cantilever, mainly includes photoetching, etching, annealing processing
Processing, release structure sheaf.
A kind of micro-cantilever of embedded channel-type of the invention, technical solution include fixing end 102, embedded channel 105,
Substrate 104 and cover board 103 and embedded channel microfluidic inlet 101, the side of the micro-cantilever are fixing ends 102, micro- outstanding
The other side of arm beam is beam, and the beam is uniform beam, or is non-uniform beam；Beam bottom portion is substrate 104, and beam upper surface is lid
Embedded channel 105 between plate 103 and substrate 104 and cover board 103 embeds channel 105 at least provided with embedded channel microfluid
Entrance 101, the substrate 104, cover board 103 and fixing end 102 are structure as a whole.
Further, channel 105 is embedded also to go out with the embedded channel microfluid being connected to embedded channel microfluidic inlet 101
Mouth 100, and the position of embedded channel microfluidic inlet 101, embedded channel microfluidic outlet port 100 can according to need reasonable cloth
It sets.
Further, entirely embedded channel 105 as needed at "-" type perhaps rectangular channel or U-shaped channel, or
Person's serpentine channel perhaps tree-shaped type channel or cross bifurcated passage.
Further, the plan view shape of the beam is rectangle perhaps triangle or trapezoidal.
Further, the fixing end (102) of the micro-cantilever of multiple embedded channel-types is successively arranged in parallel constitutes embedded channel
The micro-cantilever array of formula.
Further, the micro-cantilever array for embedding channel-type is used separately as test beam and with reference to beam.
The technical solution of processing method of the invention are as follows: a kind of processing method of the micro-cantilever of embedded channel-type, including
Following steps:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure
It mainly include single crystal layer-of-substrate 202, SiO2Buried oxide layer 201 and monocrystal silicon structure layer 200；And by single crystal layer-of-substrate 202
Carry out the oxide layer that oxidation forms single crystal layer-of-substrate 202；
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate 202 are prepared for release cantilever beam；
Step 3, the oxide layer for etching SOI wafer substrate layer open a window for etching single crystal layer-of-substrate 202；
Step 4 carries out a photoetching to monocrystal silicon structure layer 200, and in order to form cantilever beam, mask graph is according to cantilever beam
Outer profile；
Step 5 carries out plasma dry etch to monocrystal silicon structure layer 200, and etching depth requires to be less than monocrystalline silicon knot
The thickness of structure layer 200；
Step 6 carries out secondary photoetching to monocrystal silicon structure layer 200, this step is to form embedded channel, and mask graph is small
Rectangular array；
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer 200, etches into SiO2When buried oxide layer 201
Stop, forming silicon trench；
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer 200 for forming silicon trench, can be in structure sheaf
Microchannel required for inside is formed, and it is formed simultaneously cover board, it anneals and continues the regular hour；
Step 9 carries out plasma dry etch to SOI wafer substrate layer 202；
Step 10, micro-cantilever release.
Further, anneal environment is under hydrogen environment or high vacuum, and annealing temperature is 1130 ± 30 DEG C, annealing time 10
Between minute to 20 minutes.
Detection method technical solution of the invention are as follows: a kind of detection method of embedded channel-type micro-cantilever, including according to
Micro-cantilever (701), the laser emitter for emitting laser that the processing method of the micro-cantilever of embedded channel-type is produced
(702), it bends the PSD photoelectric displacement sensor (703) and computer data that deformation quantity is detected to micro-cantilever
It handles display system (704)；
Detection weighing before, with laser emitter (702) issue laser irradiation to micro-cantilever (701) free end,
It is shone on PSD photoelectric displacement sensor (703) after laser reflection, is A point；
The cognition containing cell microfluidic makes micro-cantilever generate certain Curved variable, is denoted as Δ Z；
When the laser irradiation that laser emitter (702) issues again to deformation micro-cantilever free end when, be reflected into PSD
On photoelectric displacement sensor (703), it is denoted as B point；A, the distance between B two o'clock is denoted as Δ S；
Received range data is transmitted in computer digital animation display system (704) by sensor and is handled,
According to the principle of optical lever method, the bending deformation quantity of micro-cantilever is calculatedL is that micro-cantilever free end is long
Degree, L is for laser from the free end of micro-cantilever (701) through reflecting the path shone on PSD photoelectric displacement sensor (703)；It is micro-
The amount of bow that cantilever beam is generated by average load effectWherein, E is the elasticity modulus of micro-cantilever, and m is
The quality for the cell weighed, g are acceleration of gravity, and t is the thickness of SON structure sheaf, and a is the width of SON structure sheaf, optical lever
The bending deformation quantity for the micro-cantilever that method detects be micro-cantilever by the microfluid for being had cell to be measured because of injection due to produce
The amount of bow that raw average load effect generates.
Compared with prior art, the present invention having following advantage:
(1) traditional micro-cantilever is to cover one layer of adsorption layer in the upper surface of micro-cantilever, to reach adsorbed target point
The purpose of son, such method are only used for detecting solid or gaseous measured object；And embedded channel-type micro-cantilever can
Solid measured object is mixed in the microfluid of liquid phase, greatly extends the field of micro-cantilever detection measured object, while
Measured object is enabled to adequately to be reacted or separated.The structure novel of micro-cantilever adds measured object to inhale with traditional substrate
The micro-cantilever of attached layer is compared, and embedded channel-type micro-cantilever is by measured object from the upper surface of micro-cantilever in the form of microfluid
It is transferred in the embedded microchannel of micro-cantilever, so that detection is more flexible.Meanwhile the embedded channel of micro-cantilever can be designed
The microchannel of various shapes, such as it is rectangle, U-shaped, tree-shaped type, snakelike, to achieve the purpose that detection.
(2) embedding the processing of channel-type micro-cantilever is the processing method based on a kind of SON structure.The method mainly includes
Three photoetching, annealing and post-processing steps, compared with traditional micro-cantilever processing, the step of reducing bonding, greatly
Reduce manufacturing procedure.
(3) it embeds channel-type micro-cantilever and is applicable to many fields, for example particulate or living cells are carried out
Weighing.Go out corresponding monocrystalline silicon material in the front end synchronous processing of micro-cantilever using the processing method of embedded channel-type micro-cantilever
The micro-fluidic chip of material utilizes embedded channel-type micro-cantilever for carrying out separation control, hybrid reaction to microfluid followed by
It is detected, to reach the innovation that control and detection are integrated.
(4) processing method makes substrate (104), cover board (103) and fixing end (102) be structure as a whole, compact-sized, property
Can be more stable, while substantially increasing measurement accuracy.
Detailed description of the invention
Fig. 1 is a kind of micro-cantilever with embedded channel；It (a) is top view；It (b) is Section A-A cross-sectional view；
Fig. 2 is the process flow for making the micro-cantilever in embedded channel.
Fig. 3 is the mask artwork that step (d) forms micro-cantilever in Fig. 2.
Fig. 4 is the mask artwork that step (f) forms embedded channel and cantilever beam in Fig. 2.
Fig. 5 is a kind of micro-cantilever array figure in embedded channel；(a) "-" type embeds the micro-cantilever array figure in channel；
It (b) is the micro-cantilever array figure in U-shaped embedded channel；
Fig. 6 is a kind of embedded channel micro-cantilever of triangle variable cross-section.
Fig. 7 is the micro-cantilever of embedded channel shape variation (cross bifurcated).
Fig. 8 is the system structure schematic diagram of unicellular weighing.
In figure, 100- embeds channel microfluidic outlet port；101- embeds channel microfluidic inlet；The fixation of 102- micro-cantilever
End；103- cover board；104- substrate；105- embeds channel；200-monocrystal silicon structure layers；201-SiO2 buried oxide layers；202-monocrystalline
Silicon substrate layer；701-have the micro-cantilever in embedded channel；702-laser emitters；703-PSD photoelectric displacement sensors；
704-data processing display systems.
Specific embodiment
The present invention is described in further details below with reference to the drawings and specific embodiments, but protection scope of the present invention
It is not limited to this.
As shown in Figure 1, the present invention proposes a kind of micro girder construction in embedded channel, including fixing end 102, embedded channel 105,
Substrate 104 and cover board 103 and embedded channel microfluidic inlet 101, the side of the micro-cantilever are fixing ends 102, micro- outstanding
The other side of arm beam is beam, and the beam is uniform beam, or is non-uniform beam；Beam bottom portion is substrate 104, and beam upper surface is lid
Embedded channel 105 between plate 103 and substrate 104 and cover board 103 embeds channel 105 at least provided with embedded channel microfluid
Entrance 101, the substrate 104, cover board 103 and fixing end 102 are structure as a whole.
The outlet of microfluid is not required, and the position of entrance and exit can according to need reasonable Arrangement.Such as Fig. 1
Shown, embedded channel 105 also has the embedded channel microfluidic outlet port 100 being connected to embedded channel microfluidic inlet 101, and
Embedded channel microfluidic inlet 101, the position for embedding channel microfluidic outlet port 100 can according to need reasonable Arrangement.
As shown in figure 5, the fixing end 102 of the micro-cantilever of multiple embedded channel-types is successively arranged in parallel to constitute embedded channel
The micro-cantilever array of formula.The micro-cantilever array of embedded channel-type is used separately as test beam and with reference to beam.
In order to increase tested microfluid amount detection, the length in channel can be increased；Channel 105 will entirely be embedded according to need
It is designed to "-" type (such as Fig. 5) perhaps rectangular channel perhaps U-shaped channel (such as Fig. 1) or serpentine channel；It can also root
According to the difference of flow rate in screening microfluid, entire embedded channel 105 is designed to tree-shaped type channel, Huo Zheshi as needed
Word bifurcated passage (such as Fig. 7).
According to the difference of tested microsome detection sensitivity, the plan view shape of the beam can be rectangle (such as Fig. 1), or
Triangle (such as Fig. 6) is trapezoidal.
It is shown in Figure 2, a kind of processing method of the micro-cantilever of embedded channel-type proposed by the invention.This processing side
Method process is as follows:
(a) SOI wafer backside oxide；(b) SOI wafer single crystal layer-of-substrate photoetching；(c) etching SOI wafer monocrystalline silicon lining
The oxide layer of bottom；(d) photoetching is carried out to the monocrystal silicon structure layer of SOI wafer；(e) to the monocrystal silicon structure of SOI wafer
Layer carries out plasma dry etch；(f) secondary photoetching is carried out to the monocrystal silicon structure layer of SOI wafer；(g) to SOI wafer
Monocrystal silicon structure layer carries out secondary plasma dry etching；(h) high-temperature vacuum is annealed；(i) to the monocrystalline substrate of SOI wafer
Layer carries out plasma dry etch；(j) cantilever beam discharges.Specific process are as follows:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure
It mainly include single crystal layer-of-substrate 202, SiO2Buried oxide layer 201 and monocrystal silicon structure layer 200；And by single crystal layer-of-substrate 202
Carry out the oxide layer that oxidation forms single crystal layer-of-substrate 202；As shown in Fig. 2 step (a).
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate 202 are prepared for release cantilever beam；As Fig. 2 is walked
Suddenly shown in (b).
Step 3, the oxide layer for etching SOI wafer substrate layer open a window for etching single crystal layer-of-substrate 202；Such as Fig. 2 step
(c) shown in.
Step 4 carries out a photoetching to monocrystal silicon structure layer 200, and in order to form cantilever beam, mask graph is according to cantilever beam
Outer profile；As shown in Fig. 2 step (d).Fig. 3 is the mask artwork that step (d) forms micro-cantilever, which is that middle part is convex
The side of periphery three of the rectangle risen, raised rectangle forms rectangular recess.
Step 5 carries out plasma dry etch to monocrystal silicon structure layer 200, and etching depth requires to be less than monocrystalline silicon knot
The thickness of structure layer (200)；As shown in Fig. 2 step (e).
Step 6 carries out secondary photoetching to monocrystal silicon structure layer 200, this step is to form embedded channel, and mask graph is small
Rectangular array；As shown in Fig. 2 step (f).Fig. 4 is the mask artwork that step (f) forms embedded channel and cantilever beam, and middle part is convex
The rectangular array risen is spaced having a size of 500nm-1 μm.
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer 200, etches into SiO2When buried oxide layer 201
Stop；Silicon trench is formed, as shown in Fig. 2 step (g).
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer 200 for forming silicon trench, can be in structure sheaf
Microchannel required for inside is formed, and it is formed simultaneously cover board, it anneals and continues the regular hour；The preferred anneal environment of the present embodiment
For under hydrogen environment or high vacuum, annealing temperature is 1130 ± 30 DEG C, and annealing time is between 10 minutes to 20 minutes, production
Effect is best, and production precision is high, meets test requirements document.As shown in Fig. 2 step (h).
Step 9 carries out plasma dry etch to SOI wafer substrate layer 202；As shown in Fig. 2 step (i).
Step 10, micro-cantilever release.As shown in Fig. 2 step (j).
The application field of the embedded channel-type micro-cantilever has very much, is introduced for weighing single microcell interior
The application of embedding channel-type micro-cantilever.
It is shown in Figure 8, including micro-cantilever 701, the laser emitter for emitting laser with embedded channel
702, it bends the PSD photoelectric displacement sensor 703 and computer digital animation that deformation quantity is detected to micro-cantilever
Display system 704.
Before detection weighing, laser irradiation is issued to the free end of micro-cantilever 701, laser with laser emitter 702
It is shone on PSD photoelectric displacement sensor 703 after reflection, is A point.Body containing cell microfluidic is by micro-fluidic chip, by dielectric
Electrophoretic separation, single cell is separated, and is finally flowed into the embedded channel of micro-cantilever, injection containing individual cells
Microfluid can make micro-cantilever generate certain Curved variable, be denoted as Δ Z.When the laser that laser emitter 702 issues again
It when being irradiated to the micro-cantilever free end of deformation, is reflected on PSD photoelectric displacement sensor 703, is denoted as B point.A, between B two o'clock
Distance be denoted as Δ S.Received range data is transmitted in computer digital animation display system 704 by sensor
Reason, according to the principle of optical lever method, calculates the bending deformation quantity of micro-cantileverMicro-cantilever is by average load
The amount of bow of effect and generationWherein, E is the elasticity modulus of micro-cantilever, and m is the matter for the cell weighed
Amount, g are acceleration of gravity, and t is the thickness of SON structure sheaf, and a is the width of SON structure sheaf.The micro-cantilever that optical lever method detects
Deflection of beam deflection be micro-cantilever by the microfluid for being had cell to be measured because of injection due to generate average load effect
The amount of bow of generation.
Embedded channel micro-cantilever in the present invention, use occasion include: when the microfluid containing nanoparticle or cell
It flows into microchannel, the shape and intrinsic frequency of cantilever beam can change, and be changed by the change in displacement or frequency that detect beam
The quality of nanoparticle or cell can be surveyed；If cell enters in the microchannel of micro-cantilever, micro-cantilever can be continuously detected
The characteristic variations of beam can measure the growth change situation of cell；A variety of particle mixing microfluids can design suitable micro- logical
Road separates particle in microchannel, and then detect etc..
The microchannel and cover board in the present invention are formed using that will carve fluted single crystal silicon material annealing processing,
Single crystal silicon material has biggish chemical activity under high temperature fused state, and silicon atom can occur in high temperature hydrogenation annealing process
Migration and recrystallization, to be formed simultaneously microchannel and cover board, without carrying out other bonding technologies, greatly reduce processing work
Sequence.
To sum up, the micro-cantilever and its processing method of the novel embedded channel-type of one kind of the invention, belongs to MEMS (microcomputer
Electric system) field.Embedded channel-type micro-cantilever and traditional micro-cantilever in the present invention is different, is in micro-cantilever
Inside form microchannel, micro-fluidic chip can be played the role of, while organically combining with the sensor characteristics of micro-cantilever.This
Kind of micro-cantilever, which can be used, a kind of manufactures the detection, it can be achieved that Nano grade based on the processing method of SON structure.The present invention is
A kind of novel micro-cantilever, processing method is more succinct, and application field greatly increases, while detection accuracy also greatly mentions
It is high.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (9)
1. a kind of micro-cantilever of embedded channel-type, which is characterized in that including fixing end (102), embedded channel (105), substrate
(104), cover board (103) and embedded channel microfluidic inlet (101), the side of the micro-cantilever are fixing end (102),
The other side of micro-cantilever is beam, and the beam is uniform beam, or is non-uniform beam；Beam bottom portion is substrate (104), Liang Shangduan
Face is cover board (103), is embedded channel (105) between substrate (104) and cover board (103), embeds channel (105) at least provided with interior
Embedding channel microfluidic inlet (101), the substrate (104), cover board (103) and fixing end (102) are structure as a whole.
2. a kind of micro-cantilever of embedded channel-type according to claim 1, which is characterized in that embedded channel (105) are gone back
With the embedded channel microfluidic outlet port (100) being connected to embedded channel microfluidic inlet (101), and embedded channel microfluid
Entrance (101), the position for embedding channel microfluidic outlet port (100) can according to need reasonable Arrangement.
3. a kind of micro-cantilever of embedded channel-type according to claim 1, which is characterized in that entirely embed channel
(105) as needed at "-" type perhaps rectangular channel perhaps U-shaped channel perhaps serpentine channel or tree-shaped type channel,
Or cross bifurcated passage.
4. a kind of micro-cantilever of embedded channel-type according to claim 1, which is characterized in that the plan view shape of the beam
For rectangle perhaps triangle or trapezoidal.
5. a kind of micro-cantilever of embedded channel-type according to claim 1, which is characterized in that multiple embedded channel-types
Micro-cantilever is successively arranged in parallel to constitute the micro-cantilever array for embedding channel-type.
6. a kind of micro-cantilever of embedded channel-type according to claim 5, which is characterized in that the micro- of embedded channel-type is hanged
Arm beam array is used separately as test beam and with reference to beam.
7. a kind of processing method of the micro-cantilever of embedded channel-type described in -5 any one according to claim 1, feature
It is, comprising the following steps:
Step 1, according to requiring, design the structure snd size in channel and beam, choose suitable SOI wafer, SOI wafer structure is main
Including single crystal layer-of-substrate (202), SiO2Buried oxide layer (201) and monocrystal silicon structure layer (200)；And by single crystal layer-of-substrate
(202) oxide layer that oxidation forms single crystal layer-of-substrate (202) is carried out；
Step 2, the oxide layer photoetching to SOI wafer single crystal layer-of-substrate (202) are prepared for release cantilever beam；
Step 3, the oxide layer for etching SOI wafer substrate layer, for etching single crystal layer-of-substrate (202) windowing；
Step 4 carries out a photoetching to monocrystal silicon structure layer (200), and in order to form cantilever beam, mask graph is according to cantilever beam
Outer profile；
Step 5 carries out plasma dry etch to monocrystal silicon structure layer (200), and etching depth requires to be less than monocrystal silicon structure
The thickness of layer (200)；
Step 6 carries out secondary photoetching to monocrystal silicon structure layer (200), this step is to form embedded channel to prepare, mask graph
For small rectangular array；
Step 7 carries out secondary plasma dry etching to monocrystal silicon structure layer (200), etches into SiO2When buried oxide layer (201)
Stop, forming silicon trench；
Step 8, high annealing make annealing treatment the monocrystal silicon structure layer (200) for forming silicon trench, can be in structure sheaf
Portion forms required microchannel, and is formed simultaneously cover board, anneals and continues the regular hour；
Step 9 carries out plasma dry etch to SOI wafer substrate layer (202)；
Step 10, micro-cantilever release.
8. the processing method of the micro-cantilever of embedded channel-type according to claim 7, which is characterized in that anneal environment is
Under hydrogen environment or high vacuum, annealing temperature is 1130 ± 30 DEG C, and annealing time is between 10 minutes to 20 minutes.
9. a kind of detection method of embedded channel-type micro-cantilever, which is characterized in that including according to claim 7-8 any one
Micro-cantilever (701), the laser emitter for emitting laser that the processing method of the micro-cantilever of embedded channel-type is produced
(702), it bends the PSD photoelectric displacement sensor (703) and computer data that deformation quantity is detected to micro-cantilever
It handles display system (704)；
Before detection weighing, free end of the laser irradiation to micro-cantilever (701), laser are issued with laser emitter (702)
It is shone on PSD photoelectric displacement sensor (703) after reflection, is A point；
The cognition containing cell microfluidic makes micro-cantilever generate certain Curved variable, is denoted as Δ Z；
When the laser irradiation that laser emitter (702) issues again to deformation micro-cantilever free end when, be reflected into PSD photoelectricity
On displacement sensor (703), it is denoted as B point；A, the distance between B two o'clock is denoted as Δ S；
Received range data is transmitted in computer digital animation display system (704) by sensor and is handled, according to
The principle of optical lever method calculates the bending deformation quantity of micro-cantileverL is micro-cantilever free end length, and L is
Laser is from the free end of micro-cantilever (701) through reflecting the path shone on PSD photoelectric displacement sensor (703)；Micro-cantilever
The amount of bow for being acted on and being generated by average loadWherein, E is the elasticity modulus of micro-cantilever, and m is is weighed
Cell quality, g is acceleration of gravity, and t is the thickness of SON structure sheaf, and a is the width of SON structure sheaf, optical lever method detection
The bending deformation quantity of micro-cantilever out be micro-cantilever by the microfluid for being had cell to be measured because of injection due to generate it is flat
The amount of bow that equal load effect generates.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110346103A (en) * | 2019-06-18 | 2019-10-18 | 东南大学 | A kind of deformation analytical method of MEMS cantilever beam |
| CN110346104A (en) * | 2019-06-18 | 2019-10-18 | 东南大学 | A kind of deformation analytical method of MEMS two-end fixed beam |
| CN113295321A (en) * | 2021-05-26 | 2021-08-24 | 江苏大学 | Embedded runner type micro-cantilever sensor and detection method |
| CN115178313A (en) * | 2022-08-05 | 2022-10-14 | 天津工业大学 | Design method of hollow micro-nano composite beam for biochemical molecule detection |
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| WO2022217402A1 (en) * | 2021-04-12 | 2022-10-20 | 诺思(天津)微系统有限责任公司 | Mems loudspeaker and manufacturing method therefor, and electronic device |
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| CN118328834A (en) * | 2024-06-12 | 2024-07-12 | 电子科技大学 | Electrochemical-ion gradient coupling enhanced self-powered flexible strain sensor |
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