Nothing Special   »   [go: up one dir, main page]

CN109869644B - Enhanced LED light source - Google Patents

Enhanced LED light source Download PDF

Info

Publication number
CN109869644B
CN109869644B CN201910162518.8A CN201910162518A CN109869644B CN 109869644 B CN109869644 B CN 109869644B CN 201910162518 A CN201910162518 A CN 201910162518A CN 109869644 B CN109869644 B CN 109869644B
Authority
CN
China
Prior art keywords
light
layer
transmitting
light source
arranged above
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910162518.8A
Other languages
Chinese (zh)
Other versions
CN109869644A (en
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangzhou Wen 'ao Technology Co ltd
Original Assignee
Donghai County Yifeng Lighting Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Donghai County Yifeng Lighting Co ltd filed Critical Donghai County Yifeng Lighting Co ltd
Priority to CN201910162518.8A priority Critical patent/CN109869644B/en
Publication of CN109869644A publication Critical patent/CN109869644A/en
Application granted granted Critical
Publication of CN109869644B publication Critical patent/CN109869644B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

本发明涉及一种增强型的LED光源,包括基底层,基底层上方设置有反光层,反光层的上方设置有第一介质层,第一介质层的上方设置有透光层,透光层的上方设置有第二介质层,第二介质层的上方设置有第一透光导电层,第一透光导电层的上方设置有发光介质层,发光介质层的上方设置有第二透光导电层;该增强型的LED光源,通过共振腔将LED光源发出的光进行共振反射,从而使得所有的光能够集中向光源的一侧,提高了光的利用率,而且该共振腔相比于现有技术中的普通光反射结构,达到同样距离的反射效果可以设计的更薄,另外,使用厚度可调的介质层,可以对反射光的相位进行调节,达到削弱或者增强LED光源发出的光的效果。

Figure 201910162518

The invention relates to an enhanced LED light source, comprising a base layer, a light-reflecting layer is arranged above the base layer, a first medium layer is arranged above the light-reflecting layer, a light-transmitting layer is arranged above the first medium layer, and the light-transmitting layer is A second medium layer is arranged above, a first light-transmitting conductive layer is arranged above the second medium layer, a light-emitting medium layer is arranged above the first light-transmitting conductive layer, and a second light-transmitting conductive layer is arranged above the light-emitting medium layer ; The enhanced LED light source resonates and reflects the light emitted by the LED light source through the resonant cavity, so that all the light can be concentrated to one side of the light source, which improves the utilization rate of light, and the resonant cavity is compared with the existing ones. The ordinary light reflection structure in the technology can be designed to be thinner to achieve the reflection effect of the same distance. In addition, the use of a dielectric layer with adjustable thickness can adjust the phase of the reflected light to weaken or enhance the effect of the light emitted by the LED light source. .

Figure 201910162518

Description

一种增强型的LED光源An enhanced LED light source

技术领域technical field

本发明属于LED光源技术领域,具体涉及一种增强型的LED光源。The invention belongs to the technical field of LED light sources, and in particular relates to an enhanced LED light source.

背景技术Background technique

LED光源(LED指的是Light Emitting Diode)为发光二极管光源。LED的发光原理与白炽灯和气体放电灯的发光原理都不同,LED光源的能量转化效率非常高,理论上可以达到白炽灯10%的能耗,LED相比荧光灯也可以达到50%的节能效果。光效为75lm/W的LED较同等亮度的白炽灯耗电减少约80%,节能效果显著,这对能源十分紧张的中国来说,无疑具有十分重要的意义。LED还可以与太阳能电池结合起来应用,节能又环保。其本身不含有毒有害物质(如:汞),避免了荧光灯管破裂溢出汞的二次污染,同时又没有干扰辐射。LED光源的不但更加环保节能,而且LED光源的光机色域更宽,色彩饱和度更高,更为关键的是,LED灯饰光源的使用寿命长达60000小时,能彻底解决传统灯泡光源寿命短的问题。未来,LED光源的应用会成为主流。因此,如何提高LED光源发出光的利用率,就显得尤为重要。LED light source (LED refers to Light Emitting Diode) is a light emitting diode light source. The light-emitting principle of LED is different from that of incandescent lamps and gas discharge lamps. The energy conversion efficiency of LED light sources is very high. In theory, it can reach 10% of the energy consumption of incandescent lamps. Compared with fluorescent lamps, LEDs can also achieve 50% energy-saving effect. . Compared with the incandescent lamp with the same brightness, the LED with the luminous efficiency of 75lm/W reduces the power consumption by about 80%, and the energy saving effect is remarkable. LEDs can also be combined with solar cells to save energy and protect the environment. It does not contain toxic and harmful substances (such as mercury), avoids the secondary pollution of mercury overflowing from the rupture of fluorescent lamps, and does not interfere with radiation. The LED light source is not only more environmentally friendly and energy-saving, but also has a wider optical-mechanical color gamut and higher color saturation. More importantly, the service life of the LED lighting light source is as long as 60,000 hours, which can completely solve the short life of the traditional light bulb light source. The problem. In the future, the application of LED light sources will become mainstream. Therefore, how to improve the utilization rate of the light emitted by the LED light source is particularly important.

发明内容SUMMARY OF THE INVENTION

针对上述问题,本发明的目的是提供一种提高LED光源发出的光的利用率的光源。In view of the above problems, an object of the present invention is to provide a light source that improves the utilization rate of the light emitted by the LED light source.

为此,本发明提供了一种增强型的LED光源,包括基底层,所述基底层上方设置有反光层,所述反光层的上方设置有第一介质层,所述第一介质层的上方设置有透光层,所述透光层的上方设置有第二介质层,所述第二介质层的上方设置有第一透光导电层,所述第一透光导电层的上方设置有发光介质层,所述发光介质层的上方设置有第二透光导电层。To this end, the present invention provides an enhanced LED light source, comprising a base layer, a light-reflecting layer is disposed above the base layer, a first dielectric layer is disposed above the light-reflecting layer, and a first dielectric layer is disposed above the first dielectric layer A light-transmitting layer is provided, a second medium layer is provided above the light-transmitting layer, a first light-transmitting conductive layer is provided above the second medium layer, and a light-emitting conductive layer is provided above the first light-transmitting conductive layer The medium layer is provided with a second light-transmitting conductive layer above the light-emitting medium layer.

所述透光层上设置有多个透光缝隙。The light-transmitting layer is provided with a plurality of light-transmitting slits.

所述基底层是由二氧化硅制成。The base layer is made of silica.

所述反光层、透光层均由金制成。The light-reflecting layer and the light-transmitting layer are both made of gold.

所述第一介质层、第二介质层均由二氧化硅制成。The first dielectric layer and the second dielectric layer are both made of silicon dioxide.

所述第一介质层、第二介质层均由聚甲基丙烯酸甲酯制成。The first dielectric layer and the second dielectric layer are both made of polymethyl methacrylate.

所述第一透光导电层、第二透光导电层均由透光导电材料制成。The first light-transmitting conductive layer and the second light-transmitting conductive layer are both made of light-transmitting conductive materials.

所述第一透光导电层、第二透光导电层均由石墨烯制成。The first light-transmitting conductive layer and the second light-transmitting conductive layer are both made of graphene.

所述第一透光导电层、第二透光导电层均由金属氧化物透光导电材料制成。The first light-transmitting conductive layer and the second light-transmitting conductive layer are both made of metal oxide light-transmitting conductive materials.

所述发光介质为GaAs或InGaAs制成。The light-emitting medium is made of GaAs or InGaAs.

本发明的有益效果:本发明提供的这种增强型的LED光源,由反光层、第一介质层、透光层组成一个共振腔,将LED光源发出的光进行共振反射,从而使得所有的光能够集中向光源的一侧,提高了光的利用率,而且该共振腔相比于现有技术中的普通光反射结构,达到同样距离的反射效果可以设计的更薄,另外,使用厚度可调的介质层,可以对反射光的相位进行调节,达到削弱或者增强LED光源发出的光的效果。并且利用石墨烯作为透明导电层作为电极可以使反射回来的光透过电极,另一方面体提供更多的载流子增强发光层的发光效率。Beneficial effects of the present invention: The enhanced LED light source provided by the present invention consists of a reflective layer, a first medium layer, and a light-transmitting layer to form a resonant cavity, which resonates and reflects the light emitted by the LED light source, so that all the light It can be concentrated to one side of the light source, which improves the utilization rate of light. Compared with the ordinary light reflection structure in the prior art, the resonant cavity can be designed to be thinner for the same distance. In addition, the thickness can be adjusted. The medium layer can adjust the phase of the reflected light to achieve the effect of weakening or enhancing the light emitted by the LED light source. And using graphene as a transparent conductive layer as an electrode can make the reflected light pass through the electrode, on the other hand, the body can provide more carriers to enhance the luminous efficiency of the light-emitting layer.

以下将结合附图对本发明做进一步详细说明。The present invention will be further described in detail below with reference to the accompanying drawings.

附图说明Description of drawings

图1是增强型的LED光源的结构示意图。FIG. 1 is a schematic structural diagram of an enhanced LED light source.

图中:1、基底层;2、反光层;3、第一介质层;4、透光层;5、第二介质层;6、第一透光导电层;7、发光介质层;8、第二透光导电层;9、透光缝隙。In the figure: 1. base layer; 2. reflective layer; 3. first medium layer; 4. light-transmitting layer; 5. second medium layer; 6. first light-transmitting conductive layer; 7. luminescent medium layer; 8. The second light-transmitting conductive layer; 9. The light-transmitting slit.

具体实施方式Detailed ways

为进一步阐述本发明达成预定目的所采取的技术手段及功效,以下结合附图及实施例对本发明的具体实施方式、结构特征及其功效,详细说明如下。In order to further illustrate the technical means and effects adopted by the present invention to achieve the predetermined purpose, the specific embodiments, structural features and effects of the present invention are described in detail below with reference to the accompanying drawings and examples.

实施例1Example 1

本实施例提供了一种如图1所示的增强型的LED光源,包括基底层1,基底层1具有支撑的作用,所述基底层1上方设置有反光层2,所述反光层2的上方设置有第一介质层3,所述第一介质层3的上方设置有透光层4,反光层2、第一介质层3、透光层4形成一个共振腔;所述透光层4的上方设置有第二介质层5,所述第二介质层5的上方设置有第一透光导电层6,所述第一透光导电层6的上方设置有发光介质层7,所述发光介质层7的上方设置有第二透光导电层8,第一透光导电层6、第二透光导电层8可以作为两个电极,其中,第二透光导电层8作为正极,第一透光导电层6作为正极作为负极,分别于外接电源的正负极电连接,这样就可以在发光介质层7上加载电源,使得发光介质层7能够发光,这样,就组成发光源;由于发光源发出的光会同时向各个方向传播,因此,第一透光导电层6、第二透光导电层8均选用透光率比较高的材料制成;而且在发光介质层7的下方设计一个共振腔,可以将向下传播的光进行共振反射,使得向下传播的光,能够在较小的距离反射,从而与向上传播的光进行相位叠加,提高光源发出的光的利用。This embodiment provides an enhanced LED light source as shown in FIG. 1 , including a base layer 1 , the base layer 1 has a supporting function, a reflective layer 2 is arranged above the base layer 1 , and the reflective layer 2 is A first medium layer 3 is arranged above, and a light-transmitting layer 4 is arranged above the first medium layer 3. The light-reflecting layer 2, the first medium layer 3, and the light-transmitting layer 4 form a resonant cavity; the light-transmitting layer 4 A second medium layer 5 is arranged above the second medium layer 5, a first light-transmitting conductive layer 6 is arranged above the second medium layer 5, and a light-emitting medium layer 7 is arranged above the first light-transmitting conductive layer 6. A second light-transmitting conductive layer 8 is arranged above the medium layer 7. The first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can be used as two electrodes. The light-transmitting conductive layer 6 is used as a positive electrode as a negative electrode, and is electrically connected to the positive and negative electrodes of the external power supply, so that a power supply can be loaded on the light-emitting medium layer 7, so that the light-emitting medium layer 7 can emit light, thus forming a light-emitting source; The light emitted by the light source will propagate in all directions at the same time, therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are made of materials with relatively high light transmittance; The resonant cavity can resonantly reflect the downwardly propagating light, so that the downwardly propagating light can be reflected at a small distance, thereby performing phase superposition with the upwardly propagating light, and improving the utilization of the light emitted by the light source.

进一步的,所述透光层4上设置有多个透光缝隙9;这样反光层2、第一介质层3、透光层4形成的共振腔,就是法布里-珀罗腔;第一介质层3的厚度需满足法布里-珀罗腔内发生共振的要求,

Figure GDA0002484569000000041
其中,n为第一介质层3的折射率,L为第一介质层3与第二介质层5的厚度之和,λ为光源发出的光的波长,m为整数,一般第一介质层3的厚度范围可在20~60nm之间;透光缝隙9宽度为50~130nm,优先的选择为60nm、65nm、70nm等。Further, the light-transmitting layer 4 is provided with a plurality of light-transmitting slits 9; in this way, the resonant cavity formed by the light-reflecting layer 2, the first dielectric layer 3 and the light-transmitting layer 4 is a Fabry-Perot cavity; the first The thickness of the dielectric layer 3 needs to meet the requirements of resonance in the Fabry-Perot cavity,
Figure GDA0002484569000000041
Among them, n is the refractive index of the first dielectric layer 3, L is the sum of the thicknesses of the first dielectric layer 3 and the second dielectric layer 5, λ is the wavelength of the light emitted by the light source, m is an integer, generally the first dielectric layer 3 The thickness of the light-transmitting slit 9 can be in the range of 20-60 nm; the width of the light-transmitting slit 9 is 50-130 nm, and the preferred choices are 60 nm, 65 nm, 70 nm, and the like.

进一步的,所述反光层2、透光层4均由金制成,为了确保光能够顺利透过透光层4,透光层4的厚度为10~30nm,透光层4厚度优先的选择10nm;其次是15nm、25nm、20nm其他的厚度,透光层4不仅具有反射共振波长的光的作用,还有透射共振波长的光的作用,因此,既要考虑透射率也要考虑反射率,在对透光层4进行选择的时候,根据实际需要检测的光的波长范围,选择相适应的透光层4。Further, the light-reflecting layer 2 and the light-transmitting layer 4 are both made of gold. In order to ensure that light can pass through the light-transmitting layer 4 smoothly, the thickness of the light-transmitting layer 4 is 10-30 nm, and the thickness of the light-transmitting layer 4 is preferred. 10nm; followed by other thicknesses of 15nm, 25nm, and 20nm. The light-transmitting layer 4 not only has the function of reflecting the light of the resonance wavelength, but also the function of transmitting the light of the resonance wavelength. Therefore, both the transmittance and the reflectance should be considered. When selecting the light-transmitting layer 4 , a suitable light-transmitting layer 4 is selected according to the wavelength range of the light to be detected actually.

进一步的,所述基底层1的主要作用是支撑设置在其上的其他部件,因此,基底层1考虑的主要因素是坚固性,可以是由二氧化硅或者二氧化锰等制成。Further, the main function of the base layer 1 is to support other components arranged thereon. Therefore, the main factor considered for the base layer 1 is firmness, which can be made of silicon dioxide or manganese dioxide.

进一步的,所述第一介质层3、第二介质层5主要考虑的是透光特性要好,因此第一介质层3、第二介质层均由二氧化硅制成。Further, the main consideration of the first dielectric layer 3 and the second dielectric layer 5 is that the light transmission characteristics are better, so the first dielectric layer 3 and the second dielectric layer are both made of silicon dioxide.

进一步的,所述第一透光导电层6、第二透光导电层8均由透光导电材料制成,因此,第一透光导电层6、第二透光导电层8可以均由石墨烯制成或者第一透光导电层6、第二透光导电层8均由金属氧化物透光导电材料制成;金属氧化物透光导电材料可以为TCO,还可以是其他的材料,例如FTO、ZAO等。Further, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of light-transmitting conductive materials. Therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can both be made of graphite. It is made of olefin or the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are all made of metal oxide light-transmitting conductive materials; the metal oxide light-transmitting conductive materials can be TCO, or other materials, such as FTO, ZAO, etc.

需要说明的是,第一透光导电层6优先选择石墨烯制成,石墨烯的厚度比较薄,使得反射光满足共振腔的共振要求,设计更加的简单。It should be noted that the first light-transmitting conductive layer 6 is preferably made of graphene, and the thickness of graphene is relatively thin, so that the reflected light meets the resonance requirements of the resonant cavity, and the design is simpler.

进一步的,所述发光介质7为GaAs或InGaAs制成;所述发光介质7的厚度为50nm~80nm,优先的选择为60nm、65nm、70nm、75nm等。Further, the light-emitting medium 7 is made of GaAs or InGaAs; the thickness of the light-emitting medium 7 is 50 nm˜80 nm, preferably 60 nm, 65 nm, 70 nm, 75 nm, and the like.

实施例2Example 2

一种增强型的LED光源,包括基底层1,基底层1具有支撑的作用,所述基底层1上方设置有反光层2,所述反光层2的上方设置有第一介质层3,所述第一介质层3的上方设置有透光层4,反光层2、第一介质层3、透光层4形成一个共振腔;所述透光层4的上方设置有第二介质层5,所述第二介质层5的上方设置有第一透光导电层6,所述第一透光导电层6的上方设置有发光介质层7,所述发光介质层7的上方设置有第二透光导电层8,第一透光导电层6、第二透光导电层8可以作为两个电极,分别于外接电源的正负极电连接,这样就可以在发光介质层7上加载电源,使得发光介质层7能够发光,这样,就组成发光源;由于发光源发出的光会同时向各个方向传播,因此,第一透光导电层6、第二透光导电层8均选用透光率比较高的材料制成;而且在发光介质层7的下方设计一个共振腔,可以将向下传播的光进行共振反射,使得向下传播的光,能够在较小的距离反射,从而与向上传播的光进行相位叠加,提高光源发出的光的利用An enhanced LED light source includes a base layer 1, the base layer 1 has a supporting function, a reflective layer 2 is arranged above the base layer 1, a first dielectric layer 3 is arranged above the reflective layer 2, and the A light-transmitting layer 4 is arranged above the first medium layer 3, and the light-reflecting layer 2, the first medium layer 3, and the light-transmitting layer 4 form a resonant cavity; a second medium layer 5 is arranged above the light-transmitting layer 4, so the A first light-transmitting conductive layer 6 is arranged above the second medium layer 5 , a light-emitting medium layer 7 is arranged above the first light-transmitting conductive layer 6 , and a second light-transmitting medium layer 7 is arranged above the light-emitting medium layer 7 The conductive layer 8, the first light-transmitting conductive layer 6, and the second light-transmitting conductive layer 8 can be used as two electrodes, which are electrically connected to the positive and negative poles of the external power supply, so that the power supply can be loaded on the light-emitting medium layer 7, so that the light is emitted. The medium layer 7 can emit light, thus forming a light-emitting source; since the light emitted by the light-emitting source will propagate in all directions at the same time, therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are selected with relatively high light transmittance. and a resonant cavity is designed under the light-emitting medium layer 7, which can resonantly reflect the downwardly propagating light, so that the downwardly propagating light can be reflected at a smaller distance, so as to be compatible with the upwardly propagating light. Perform phase superposition to improve the utilization of light emitted by the light source

进一步的,所述反光层2、透光层4均由金制成,为了确保光能够顺利透过透光层4,透光层4的厚度为10~30nm,透光层4厚度优先的选择10nm;其次是15nm、25nm、20nm其他的厚度,透光层4不仅具有反射共振波长的光的作用,还有透射共振波长的光的作用,因此,既要考虑透射率也要考虑反射率,在对透光层4进行选择的时候,根据实际需要检测的光的波长范围,选择相适应的透光层4。Further, the light-reflecting layer 2 and the light-transmitting layer 4 are both made of gold. In order to ensure that light can pass through the light-transmitting layer 4 smoothly, the thickness of the light-transmitting layer 4 is 10-30 nm, and the thickness of the light-transmitting layer 4 is preferred. 10nm; followed by other thicknesses of 15nm, 25nm, and 20nm. The light-transmitting layer 4 not only has the function of reflecting the light of the resonance wavelength, but also the function of transmitting the light of the resonance wavelength. Therefore, both the transmittance and the reflectance should be considered. When selecting the light-transmitting layer 4 , a suitable light-transmitting layer 4 is selected according to the wavelength range of the light to be detected actually.

进一步的,所述透光层4上设置有多个透光缝隙9。Further, the light-transmitting layer 4 is provided with a plurality of light-transmitting slits 9 .

进一步的,所述基底层1的主要作用是支撑设置在其上的其他部件,因此,基底层1考虑的主要因素是坚固性,可以是由二氧化硅或者二氧化锰等制成。Further, the main function of the base layer 1 is to support other components arranged thereon. Therefore, the main factor considered for the base layer 1 is firmness, which can be made of silicon dioxide or manganese dioxide.

进一步的,所述第一透光导电层6、第二透光导电层8均由透光导电材料制成,因此,第一透光导电层6、第二透光导电层8可以均由石墨烯制成或者第一透光导电层6、第二透光导电层8均由金属氧化物透光导电材料制成;金属氧化物透光导电材料可以为TCO,还可以是其他的材料,例如FTO、ZAO等。Further, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of light-transmitting conductive materials. Therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can both be made of graphite. It is made of olefin or the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are all made of metal oxide light-transmitting conductive materials; the metal oxide light-transmitting conductive materials can be TCO, or other materials, such as FTO, ZAO, etc.

需要说明的是,第一透光导电层6优先选择石墨烯制成,石墨烯的厚度比较薄,使得反射光满足共振腔的共振要求,设计更加的简单。It should be noted that the first light-transmitting conductive layer 6 is preferably made of graphene, and the thickness of graphene is relatively thin, so that the reflected light meets the resonance requirements of the resonant cavity, and the design is simpler.

所述发光介质7为GaAs或InGaAs制成;所述发光介质7的厚度为50nm~80nm,优先的选择为60nm、65nm、70nm、75nm等。The light-emitting medium 7 is made of GaAs or InGaAs; the thickness of the light-emitting medium 7 is 50 nm˜80 nm, preferably 60 nm, 65 nm, 70 nm, 75 nm, and the like.

进一步的,第一介质层3的厚度范围可在20~60nm之间;透光缝隙9宽度为50~130nm,优先的选择为60nm、65nm、70nm等。Further, the thickness of the first dielectric layer 3 can be in the range of 20-60 nm; the width of the light-transmitting gap 9 is 50-130 nm, preferably 60 nm, 65 nm, 70 nm, and the like.

进一步的,所述第一介质层3、第二介质层5均由聚甲基丙烯酸甲酯(PMMA)制成,当温度变化时,聚甲基丙烯酸甲酯发生膨胀,使得第一介质层3、第二介质层5的厚度发生变化,从而导致发射光的相位发生变化,与向上传播的光的叠加导致光源发出的光整体变亮或者变暗,因此,聚甲基丙烯酸甲酯构成的第一介质层3、第二介质层5的厚度随温度变化,可以根据使得LED光源的光,随温度变化进行自动调节,从而使得所述的LED光源能够适应环境的温度,对光的亮度进行自适应调节。Further, the first dielectric layer 3 and the second dielectric layer 5 are both made of polymethyl methacrylate (PMMA). When the temperature changes, the polymethyl methacrylate expands, so that the first dielectric layer 3 , The thickness of the second dielectric layer 5 changes, which causes the phase of the emitted light to change, and the superposition with the upwardly propagating light causes the light emitted by the light source to become brighter or darker as a whole. The thicknesses of the first dielectric layer 3 and the second dielectric layer 5 change with temperature, and can be automatically adjusted according to the light of the LED light source with the temperature change, so that the LED light source can adapt to the temperature of the environment and automatically adjust the brightness of the light. Adaptive adjustment.

Figure GDA0002484569000000071
当m为整数时,光源发出的光整体变亮,此为增强LED光源状态,当m为
Figure GDA0002484569000000072
倍的奇数时,光源发出的光整体变暗,此为减弱LED光源状态;其中,n为第一介质层3的折射率,L为第一介质层3与第二介质层5的厚度之和,δT为温度的变化,α聚甲基丙烯酸甲酯的热膨胀系数,λ为光源发出的光的波长。
Figure GDA0002484569000000071
When m is an integer, the light emitted by the light source becomes brighter as a whole, which is the state of the enhanced LED light source. When m is
Figure GDA0002484569000000072
When it is an odd number of times, the light emitted by the light source becomes dark as a whole, which is the state of weakening the LED light source; wherein, n is the refractive index of the first dielectric layer 3, and L is the sum of the thicknesses of the first dielectric layer 3 and the second dielectric layer 5 , δT is the change in temperature, α is the thermal expansion coefficient of polymethyl methacrylate, and λ is the wavelength of the light emitted by the light source.

以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (8)

1. An enhanced LED light source, comprising: the light-transmitting and light-transmitting composite film comprises a substrate layer (1), wherein a light-reflecting layer (2) is arranged above the substrate layer (1), a first medium layer (3) is arranged above the light-reflecting layer (2), a light-transmitting layer (4) is arranged above the first medium layer (3), a second medium layer (5) is arranged above the light-transmitting layer (4), a first light-transmitting conductive layer (6) is arranged above the second medium layer (5), a light-emitting medium layer (7) is arranged above the first light-transmitting conductive layer (6), and a second light-transmitting conductive layer (8) is arranged above the light-emitting medium layer (7);
the first dielectric layer (3) and the second dielectric layer (5) are both made of polymethyl methacrylate, so that the thicknesses of the first dielectric layer (3) and the second dielectric layer (5) change along with the temperature, and the whole light emitted by the light source becomes bright or dark through the first dielectric layer (3) and the second dielectric layer (5); the formula for lightening or darkening the light whole body is
Figure FDA0002484568990000011
Wherein n is the refractive index of the first dielectric layer (3), L is the sum of the thicknesses of the first dielectric layer (3) and the second dielectric layer (5), T is the change of temperature, alpha is the thermal expansion coefficient of polymethyl methacrylate, and lambda is the wavelength of light emitted by the light source.
2. An enhanced LED light source as recited in claim 1, wherein: and a plurality of light-transmitting gaps (9) are arranged on the light-transmitting layer (4).
3. An enhanced LED light source as recited in claim 1, wherein: the base layer (1) is made of silicon dioxide.
4. An enhanced LED light source as recited in claim 1, wherein: the light reflecting layer (2) and the light transmitting layer (4) are both made of gold.
5. An enhanced LED light source as recited in claim 1, wherein: the first light-transmitting conductive layer (6) and the second light-transmitting conductive layer (8) are both made of light-transmitting conductive materials.
6. An enhanced LED light source as recited in claim 5, wherein: the first light-transmitting conducting layer (6) and the second light-transmitting conducting layer (8) are both made of graphene.
7. An enhanced LED light source as recited in claim 5, wherein: the first light-transmitting conductive layer (6) and the second light-transmitting conductive layer (8) are both made of metal oxide light-transmitting conductive materials.
8. An enhanced LED light source as recited in claim 1, wherein: the luminous medium (7) is made of GaAs or InGaAs.
CN201910162518.8A 2019-03-05 2019-03-05 Enhanced LED light source Active CN109869644B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910162518.8A CN109869644B (en) 2019-03-05 2019-03-05 Enhanced LED light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910162518.8A CN109869644B (en) 2019-03-05 2019-03-05 Enhanced LED light source

Publications (2)

Publication Number Publication Date
CN109869644A CN109869644A (en) 2019-06-11
CN109869644B true CN109869644B (en) 2020-12-25

Family

ID=66919659

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910162518.8A Active CN109869644B (en) 2019-03-05 2019-03-05 Enhanced LED light source

Country Status (1)

Country Link
CN (1) CN109869644B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115332420B (en) * 2022-10-13 2023-01-31 季华实验室 Implanted mu LED photoelectrode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1367938A (en) * 1999-06-02 2002-09-04 精工爱普生株式会社 Multiple wavelength light emitting device, electronic apparatus, and interference mirror
CN101469079A (en) * 2007-12-28 2009-07-01 东海兴业株式会社 Molded product and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2353400B (en) * 1999-08-20 2004-01-14 Cambridge Display Tech Ltd Mutiple-wavelength light emitting device and electronic apparatus
CN103247737B (en) * 2012-10-19 2016-08-24 璨圆光电股份有限公司 Light-emitting diode chip with reflective structure
CN103293821B (en) * 2013-05-15 2016-07-06 南京诺派激光技术有限公司 Fa-Po cavity device for non-linear optical being integrated with ultra-thin carbon-coating and preparation method thereof
CN109326702A (en) * 2017-07-31 2019-02-12 山东浪潮华光光电子股份有限公司 A kind of LED chip with annular electrode structure and preparation method thereof
CN108287944B (en) * 2017-12-29 2020-11-24 华中科技大学 A kind of OLED structure size optimization design method and equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1367938A (en) * 1999-06-02 2002-09-04 精工爱普生株式会社 Multiple wavelength light emitting device, electronic apparatus, and interference mirror
CN101469079A (en) * 2007-12-28 2009-07-01 东海兴业株式会社 Molded product and method of manufacturing the same

Also Published As

Publication number Publication date
CN109869644A (en) 2019-06-11

Similar Documents

Publication Publication Date Title
TWI317562B (en) Light-emitting device
US11282985B2 (en) Flip-chip LED chip used in backlight and production method thereof
CN101539270A (en) Method for converting light wavelength with emission angle selectivity characteristic
CN101567414B (en) Light-emitting diode chip and manufacturing method thereof
TWI584044B (en) Phosphor wheel and wavelength-converting device applying the same
CN102683532A (en) Substrate containing imaging Distributed Bragg Reflector (DBR) structure
TWM370095U (en) Wave length modulating apparatus for light source
CN204088355U (en) A kind of light emitting diode construction
JP2013149591A (en) Plane light-emitting diode illumination
CN109869644B (en) Enhanced LED light source
CN106468427A (en) Fluorescent color wheel and wavelength conversion device using same
CN102738359B (en) LED package
CN101725902A (en) Planar light source device
CN203615093U (en) Two-sided luminous type plane lamps and lanterns
CN110454693A (en) A kind of laser-enhanced LED lighting unit
CN206364047U (en) Light Emitting Diode (LED) chip
CN210717005U (en) Laser light source packaging structure
CN112162435B (en) An edge-type quantum dot backlight module structure
CN101936508B (en) Light source wavelength modulation device
CN202564429U (en) Light emitting diode (LED) with back plating structure
CN114944461B (en) OLED device with optical resonant cavity and OLED panel
CN214147754U (en) Light that can tolerate high power density changes material device
CN202065919U (en) Luminaires with good light penetration
CN202816869U (en) Gas discharge lamp
CN201772287U (en) Light-emitting device for increasing light extraction efficiency by destroying total reflection light source

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20201207

Address after: 222300 No. 9, Jing Chen Road, Donghai County Economic Development Zone, Jiangsu, Lianyungang

Applicant after: DONGHAI COUNTY YIFENG LIGHTING Co.,Ltd.

Address before: 322200 Dongshan Road, Xianhua Street, Pujiang County, Jinhua City, Zhejiang Province, 488

Applicant before: JINHUA FUAN PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20241219

Address after: 3rd Floor, No. 9 Yiheng Street, Yongxing East Road, Baiyun District, Guangzhou City, Guangdong Province, 510000

Patentee after: GUANGZHOU WEN 'AO TECHNOLOGY Co.,Ltd.

Country or region after: China

Address before: 222300 Jingchen Road, Donghai Economic Development Zone, Lianyungang City, Jiangsu Province

Patentee before: DONGHAI COUNTY YIFENG LIGHTING Co.,Ltd.

Country or region before: China