CN109869644B - Enhanced LED light source - Google Patents
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- CN109869644B CN109869644B CN201910162518.8A CN201910162518A CN109869644B CN 109869644 B CN109869644 B CN 109869644B CN 201910162518 A CN201910162518 A CN 201910162518A CN 109869644 B CN109869644 B CN 109869644B
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Abstract
The invention relates to an enhanced LED light source, which comprises a substrate layer, wherein a reflecting layer is arranged above the substrate layer, a first medium layer is arranged above the reflecting layer, a light-transmitting layer is arranged above the first medium layer, a second medium layer is arranged above the light-transmitting layer, a first light-transmitting conducting layer is arranged above the second medium layer, a light-emitting medium layer is arranged above the first light-transmitting conducting layer, and a second light-transmitting conducting layer is arranged above the light-emitting medium layer; according to the enhanced LED light source, the resonant cavity performs resonant reflection on light emitted by the LED light source, so that all light can be concentrated to one side of the light source, the utilization rate of the light is improved, and compared with a common light reflection structure in the prior art, the resonant cavity can achieve the effect that the reflection effect at the same distance can be designed to be thinner.
Description
Technical Field
The invention belongs to the technical field of LED light sources, and particularly relates to an enhanced LED light source.
Background
An LED Light source (LED refers to a Light Emitting Diode) is a Light Emitting Diode Light source. The LED light-emitting principle is different from the light-emitting principle of an incandescent lamp and a gas discharge lamp, the energy conversion efficiency of an LED light source is very high, the energy consumption of the incandescent lamp can reach 10% theoretically, and the energy-saving effect of the LED can reach 50% compared with that of a fluorescent lamp. Compared with an incandescent lamp with the same brightness, the LED with the luminous efficiency of 75lm/W has the advantages that the power consumption is reduced by about 80%, the energy-saving effect is obvious, and the LED has very important significance undoubtedly to China with energy shortage. The LED can also be combined with a solar cell for application, thereby saving energy and protecting environment. It contains no toxic and harmful matter, and has no secondary pollution caused by mercury overflow from broken fluorescent lamp tube and no interference radiation. The LED light source is more environment-friendly and energy-saving, the color gamut of a light machine of the LED light source is wider, the color saturation is higher, more importantly, the service life of the LED lamp light source is as long as 60000 hours, and the problem that the service life of the traditional bulb light source is short can be thoroughly solved. In the future, the application of LED light sources will become mainstream. Therefore, it is very important how to improve the utilization rate of the light emitted by the LED light source.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a light source that improves the utilization of light emitted by an LED light source.
Therefore, the invention provides an enhanced LED light source which comprises a substrate layer, wherein a reflecting layer is arranged above the substrate layer, a first medium layer is arranged above the reflecting layer, a light transmitting layer is arranged above the first medium layer, a second medium layer is arranged above the light transmitting layer, a first light transmitting conducting layer is arranged above the second medium layer, a light emitting medium layer is arranged above the first light transmitting conducting layer, and a second light transmitting conducting layer is arranged above the light emitting medium layer.
And the euphotic layer is provided with a plurality of euphotic gaps.
The base layer is made of silicon dioxide.
The light reflecting layer and the light transmitting layer are both made of gold.
The first dielectric layer and the second dielectric layer are both made of silicon dioxide.
The first dielectric layer and the second dielectric layer are both made of polymethyl methacrylate.
The first light-transmitting conductive layer and the second light-transmitting conductive layer are both made of light-transmitting conductive materials.
The first light-transmitting conducting layer and the second light-transmitting conducting layer are both made of graphene.
The first light-transmitting conducting layer and the second light-transmitting conducting layer are both made of metal oxide light-transmitting conducting materials.
The luminous medium is made of GaAs or InGaAs.
The invention has the beneficial effects that: the enhanced LED light source provided by the invention comprises a resonant cavity consisting of the reflecting layer, the first medium layer and the euphotic layer, and the resonant cavity is used for performing resonant reflection on light emitted by the LED light source, so that all light can be concentrated to one side of the light source, the utilization rate of the light is improved, and compared with a common light reflecting structure in the prior art, the resonant cavity can be designed to be thinner to achieve the reflecting effect at the same distance, and in addition, the medium layer with adjustable thickness is used, the phase of the reflected light can be adjusted, and the effect of weakening or enhancing the light emitted by the LED light source is achieved. And the graphene is used as a transparent conductive layer to serve as an electrode, so that the reflected light can transmit through the electrode, and the other surface body provides more carriers to enhance the luminous efficiency of the luminous layer.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of an enhanced LED light source.
In the figure: 1. a base layer; 2. a light-reflecting layer; 3. a first dielectric layer; 4. a light transmitting layer; 5. a second dielectric layer; 6. a first light-transmitting conductive layer; 7. a light-emitting medium layer; 8. a second light-transmitting conductive layer; 9. a light-transmitting gap.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The embodiment provides an enhanced LED light source as shown in fig. 1, which includes a substrate layer 1, where the substrate layer 1 has a supporting function, a reflective layer 2 is disposed above the substrate layer 1, a first dielectric layer 3 is disposed above the reflective layer 2, a transparent layer 4 is disposed above the first dielectric layer 3, and the reflective layer 2, the first dielectric layer 3, and the transparent layer 4 form a resonant cavity; a second medium layer 5 is arranged above the euphotic layer 4, a first euphotic conducting layer 6 is arranged above the second medium layer 5, a luminous medium layer 7 is arranged above the first euphotic conducting layer 6, a second euphotic conducting layer 8 is arranged above the luminous medium layer 7, the first euphotic conducting layer 6 and the second euphotic conducting layer 8 can be used as two electrodes, wherein the second euphotic conducting layer 8 is used as an anode, the first euphotic conducting layer 6 is used as an anode and as a cathode, and are respectively and electrically connected with the anode and the cathode of an external power supply, so that a power supply can be loaded on the luminous medium layer 7 to enable the luminous medium layer 7 to emit light, and a luminous source is formed; because the light emitted by the light source can be transmitted to all directions at the same time, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are made of materials with higher light transmittance; and a resonant cavity is designed below the light-emitting medium layer 7, so that the light propagating downwards can be reflected in a resonant manner, the light propagating downwards can be reflected at a smaller distance, the light propagating upwards can be subjected to phase superposition, and the utilization of the light emitted by the light source is improved.
Further, a plurality of light-transmitting slits 9 are arranged on the light-transmitting layer 4; thus, a resonant cavity formed by the reflecting layer 2, the first medium layer 3 and the light transmitting layer 4 is a Fabry-Perot cavity; the thickness of the first dielectric layer 3 is required to meet the requirement of resonance generation in a fabry-perot cavity,
wherein n is the refractive index of the first dielectric layer 3, L is the sum of the thicknesses of the first dielectric layer 3 and the second dielectric layer 5, λ is the wavelength of light emitted by the light source, m is an integer, and the thickness range of the first dielectric layer 3 can be generally 20-60 nm; the width of the light-transmitting slit 9 is 50-130 nm, preferably 60nm, 65nm, 70nm, etc.
Further, the reflecting layer 2 and the light transmitting layer 4 are both made of gold, and in order to ensure that light can smoothly transmit through the light transmitting layer 4, the thickness of the light transmitting layer 4 is 10-30 nm, and the thickness of the light transmitting layer 4 is preferably 10 nm; next, since the light-transmitting layer 4 has a thickness of other than 15nm, 25nm, and 20nm, and has a function of transmitting light of a resonance wavelength as well as reflecting light of a resonance wavelength, when the light-transmitting layer 4 is selected, the light-transmitting layer 4 is selected according to a wavelength range of light to be actually detected, taking into consideration both transmittance and reflectance.
Further, the main function of the substrate layer 1 is to support other components arranged thereon, and therefore, the substrate layer 1 takes into account the robustness, which may be made of silicon dioxide or manganese dioxide, etc.
Further, the first dielectric layer 3 and the second dielectric layer 5 are mainly considered to have good light transmission characteristics, so that the first dielectric layer 3 and the second dielectric layer are both made of silicon dioxide.
Further, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of a light-transmitting conductive material, and therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can be both made of graphene or both the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of a metal oxide light-transmitting conductive material; the metal oxide light-transmitting conductive material may be TCO, and may be other materials, such as FTO, ZAO, and the like.
It should be noted that, the first light-transmitting conductive layer 6 is preferably made of graphene, and the thickness of the graphene is relatively thin, so that the reflected light meets the resonance requirement of the resonant cavity, and the design is simpler.
Further, the luminescent medium 7 is made of GaAs or InGaAs; the thickness of the luminescent medium 7 is 50nm to 80nm, preferably 60nm, 65nm, 70nm, 75nm, or the like.
Example 2
An enhanced LED light source comprises a substrate layer 1, wherein the substrate layer 1 has a supporting function, a reflecting layer 2 is arranged above the substrate layer 1, a first medium layer 3 is arranged above the reflecting layer 2, a light transmitting layer 4 is arranged above the first medium layer 3, and the reflecting layer 2, the first medium layer 3 and the light transmitting layer 4 form a resonant cavity; a second medium layer 5 is arranged above the light-transmitting layer 4, a first light-transmitting conductive layer 6 is arranged above the second medium layer 5, a light-emitting medium layer 7 is arranged above the first light-transmitting conductive layer 6, a second light-transmitting conductive layer 8 is arranged above the light-emitting medium layer 7, and the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can be used as two electrodes which are respectively electrically connected with the positive electrode and the negative electrode of an external power supply, so that a power supply can be loaded on the light-emitting medium layer 7 to enable the light-emitting medium layer 7 to emit light, and a light-emitting source is formed; because the light emitted by the light source can be transmitted to all directions at the same time, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are made of materials with higher light transmittance; and a resonant cavity is designed below the light-emitting medium layer 7, which can perform resonant reflection on the light propagating downwards, so that the light propagating downwards can be reflected at a smaller distance, and thus, the light propagating upwards can be subjected to phase superposition, and the utilization of the light emitted by the light source is improved
Further, the reflecting layer 2 and the light transmitting layer 4 are both made of gold, and in order to ensure that light can smoothly transmit through the light transmitting layer 4, the thickness of the light transmitting layer 4 is 10-30 nm, and the thickness of the light transmitting layer 4 is preferably 10 nm; next, since the light-transmitting layer 4 has a thickness of other than 15nm, 25nm, and 20nm, and has a function of transmitting light of a resonance wavelength as well as reflecting light of a resonance wavelength, when the light-transmitting layer 4 is selected, the light-transmitting layer 4 is selected according to a wavelength range of light to be actually detected, taking into consideration both transmittance and reflectance.
Further, a plurality of light-transmitting slits 9 are provided in the light-transmitting layer 4.
Further, the main function of the substrate layer 1 is to support other components arranged thereon, and therefore, the substrate layer 1 takes into account the robustness, which may be made of silicon dioxide or manganese dioxide, etc.
Further, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of a light-transmitting conductive material, and therefore, the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 can be both made of graphene or both the first light-transmitting conductive layer 6 and the second light-transmitting conductive layer 8 are both made of a metal oxide light-transmitting conductive material; the metal oxide light-transmitting conductive material may be TCO, and may be other materials, such as FTO, ZAO, and the like.
It should be noted that, the first light-transmitting conductive layer 6 is preferably made of graphene, and the thickness of the graphene is relatively thin, so that the reflected light meets the resonance requirement of the resonant cavity, and the design is simpler.
The luminous medium 7 is made of GaAs or InGaAs; the thickness of the luminescent medium 7 is 50nm to 80nm, preferably 60nm, 65nm, 70nm, 75nm, or the like.
Furthermore, the thickness range of the first dielectric layer 3 can be 20-60 nm; the width of the light-transmitting slit 9 is 50-130 nm, preferably 60nm, 65nm, 70nm, etc.
Further, the first dielectric layer 3 and the second dielectric layer 5 are both made of polymethyl methacrylate (PMMA), and when the temperature changes, the PMMA expands, so that the thicknesses of the first dielectric layer 3 and the second dielectric layer 5 change, thereby causing the phase of the emitted light to change, and the superposition with the light propagating upwards causes the light whole body emitted by the light source to become bright or dark, therefore, the thicknesses of the first dielectric layer 3 and the second dielectric layer 5 formed by the PMMA change with the temperature, and can be automatically adjusted along with the temperature change according to the light of the LED light source, thereby enabling the LED light source to adapt to the temperature of the environment and adaptively adjusting the brightness of the light.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. An enhanced LED light source, comprising: the light-transmitting and light-transmitting composite film comprises a substrate layer (1), wherein a light-reflecting layer (2) is arranged above the substrate layer (1), a first medium layer (3) is arranged above the light-reflecting layer (2), a light-transmitting layer (4) is arranged above the first medium layer (3), a second medium layer (5) is arranged above the light-transmitting layer (4), a first light-transmitting conductive layer (6) is arranged above the second medium layer (5), a light-emitting medium layer (7) is arranged above the first light-transmitting conductive layer (6), and a second light-transmitting conductive layer (8) is arranged above the light-emitting medium layer (7);
the first dielectric layer (3) and the second dielectric layer (5) are both made of polymethyl methacrylate, so that the thicknesses of the first dielectric layer (3) and the second dielectric layer (5) change along with the temperature, and the whole light emitted by the light source becomes bright or dark through the first dielectric layer (3) and the second dielectric layer (5); the formula for lightening or darkening the light whole body is
Wherein n is the refractive index of the first dielectric layer (3), L is the sum of the thicknesses of the first dielectric layer (3) and the second dielectric layer (5), T is the change of temperature, alpha is the thermal expansion coefficient of polymethyl methacrylate, and lambda is the wavelength of light emitted by the light source.
2. An enhanced LED light source as recited in claim 1, wherein: and a plurality of light-transmitting gaps (9) are arranged on the light-transmitting layer (4).
3. An enhanced LED light source as recited in claim 1, wherein: the base layer (1) is made of silicon dioxide.
4. An enhanced LED light source as recited in claim 1, wherein: the light reflecting layer (2) and the light transmitting layer (4) are both made of gold.
5. An enhanced LED light source as recited in claim 1, wherein: the first light-transmitting conductive layer (6) and the second light-transmitting conductive layer (8) are both made of light-transmitting conductive materials.
6. An enhanced LED light source as recited in claim 5, wherein: the first light-transmitting conducting layer (6) and the second light-transmitting conducting layer (8) are both made of graphene.
7. An enhanced LED light source as recited in claim 5, wherein: the first light-transmitting conductive layer (6) and the second light-transmitting conductive layer (8) are both made of metal oxide light-transmitting conductive materials.
8. An enhanced LED light source as recited in claim 1, wherein: the luminous medium (7) is made of GaAs or InGaAs.
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| CN201910162518.8A CN109869644B (en) | 2019-03-05 | 2019-03-05 | Enhanced LED light source |
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| CN1367938A (en) * | 1999-06-02 | 2002-09-04 | 精工爱普生株式会社 | Multiple wavelength light emitting device, electronic apparatus, and interference mirror |
| CN101469079A (en) * | 2007-12-28 | 2009-07-01 | 东海兴业株式会社 | Molded product and method of manufacturing the same |
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| GB2353400B (en) * | 1999-08-20 | 2004-01-14 | Cambridge Display Tech Ltd | Mutiple-wavelength light emitting device and electronic apparatus |
| CN103247737B (en) * | 2012-10-19 | 2016-08-24 | 璨圆光电股份有限公司 | There is the light-emitting diode chip for backlight unit of catoptric arrangement |
| CN103293821B (en) * | 2013-05-15 | 2016-07-06 | 南京诺派激光技术有限公司 | Fa-Po cavity device for non-linear optical being integrated with ultra-thin carbon-coating and preparation method thereof |
| CN109326702A (en) * | 2017-07-31 | 2019-02-12 | 山东浪潮华光光电子股份有限公司 | A kind of LED chip and preparation method thereof with annular electrode structure |
| CN108287944B (en) * | 2017-12-29 | 2020-11-24 | 华中科技大学 | OLED structure size optimization design method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1367938A (en) * | 1999-06-02 | 2002-09-04 | 精工爱普生株式会社 | Multiple wavelength light emitting device, electronic apparatus, and interference mirror |
| CN101469079A (en) * | 2007-12-28 | 2009-07-01 | 东海兴业株式会社 | Molded product and method of manufacturing the same |
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Effective date of registration: 20201207 Address after: 222300 No. 9, Jing Chen Road, Donghai County Economic Development Zone, Jiangsu, Lianyungang Applicant after: DONGHAI COUNTY YIFENG LIGHTING Co.,Ltd. Address before: 322200 Dongshan Road, Xianhua Street, Pujiang County, Jinhua City, Zhejiang Province, 488 Applicant before: JINHUA FUAN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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