CN109768027A - A kind of structure and manufacturing method of Micro-LED display screen - Google Patents
A kind of structure and manufacturing method of Micro-LED display screen Download PDFInfo
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- CN109768027A CN109768027A CN201910085493.6A CN201910085493A CN109768027A CN 109768027 A CN109768027 A CN 109768027A CN 201910085493 A CN201910085493 A CN 201910085493A CN 109768027 A CN109768027 A CN 109768027A
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The present invention relates to a kind of Micro-LED display screen structure and manufacturing methods, it is related to display technology field, including the array of display for being set to display screen front and being made of Micro-LED chip, the Micro-LED chip of every each column of a line is connected through metal wire respectively in the array of display, and a layer insulating is respectively arranged between the surface of array of display and the metal wire of row and column；The back side of the display screen is provided with the back metal cabling that driving chip, metal pad and several one end are connected with driving chip, and every back metal cabling is functionally corresponded with positive metal wire；The positive metal wire of the display screen connects through via hole mode with the one-to-one back metal cabling in the back side and forms access.Effectively overcome the transfer and bonding problem of Micro-LED design of LED manufacturing process.
Description
Technical field
The present invention relates to a kind of Micro-LED display screen structure and manufacturing methods, are related to display technology field.
Background technique
Micro-LED, which refers to, carries out microminiaturization for traditional LED structure, due to the brightness of Micro-LED technology, the service life,
The various performances such as contrast, reaction time, power consumption, visible angle will be better than LCD and OLED technology, in addition its belong to it is spontaneous
The simple and extremely strong adaptive capacity to environment of light, structure is considered as next-generation display technology by many production men and starts positive cloth
Office.
The structure of Micro-LED display screen is mainly the knot of Micro-LED chip and CMOS or TFT driving backboard at present
It closes, Micro-LED chip is integrated on CMOS or TFT driving backboard by way of shifting and being bonded, so as to form one
Complete display screen structure.But the transfer techniques of Micro-LED are at present still or a problem strongly captured, and
And the bonding techniques of Micro-LED also need constantly to improve.In general, CMOS or TFT drives designing and manufacturing for backboard
And the transfer and bonding meeting of Micro-LED chip, so that development process is more complicated, development cost is higher.
In the Micro-LED display screen driven in a manner of PM, common cathode common-anode metal lead wire need in addition draw and with
Peripheral circuit is attached, and the drive control of peripheral circuit is realized with this.In traditional large scale LED is shown, these common cathodes
Pole common-anode metal lead wire can be directly made on PCB, but be shown in Micro-LED, and the metal lead wire of minimal width is without legal system
Make on PCB.To solve this problem, metal lead wire can be directly made on display screen, but this can be such that it occupies centainly
Non-display area area, in addition, driving chip hot pressing can both to show in also needing to occupy certain area on display screen
The effective display area domain ratio of display screen reduces.
Summary of the invention
The purpose of the present invention is to provide a kind of Micro-LED display screen structure and manufacturing methods, overcome Micro-LED aobvious
The transfer and bonding problem of display screen Design and manufacturing process.
Technical program of the present invention lies in a kind of Micro-LED display screen structures, including be set to display screen front and by
The array of display that Micro-LED chip is constituted, the Micro-LED chip of every each column of a line is respectively through gold in the array of display
Belong to line connection, and is respectively arranged with a layer insulating between the surface of array of display and the metal wire of row and column；The display
The back side of screen is provided with the back metal cabling that driving chip, metal pad and several one end are connected with driving chip,
Every back metal cabling is functionally corresponded with positive metal wire；The positive metal wire of the display screen and the back side
One-to-one back metal cabling connects through via hole mode and forms access.
Further, the array of display that the Micro-LED chip is constituted is directly to perform etching on its substrate simultaneously directly
It connects to be formed.
Further, the substrate is for glass substrate and for epitaxial growth LED chip, and substrate is in epitaxial growth and picture
Without being removed after elementization.
Further, the metal wire of the positive every each column of a line of the display screen only extends to the Micro- of outermost
LED chip, and the overlapping place's setting of metal wire of the Micro-LED chip of the Micro-LED chip and each column of every a line is useful
In the insulating layer of isolation.
Further, the metal wire of the every a line in the display screen front is common cathode metal wire, and the metal wire of each column is
Common-anode metal wire, the insulating layer are SiO2Insulating layer.
Further, the size of the driving chip is less than the area of array of display, and through the direct hot pressing of COG mode in glass
The back side of glass substrate.
Further, the via hole mode is to perform etching at the edge of substrate and ultimately form the through-hole between front and back sides.
Further, the through-hole forms through two-sided etching and fills metal inside through-hole.
A kind of manufacturing method of Micro-LED display screen structure, comprising the following steps:
Step S1: each functional layer of epitaxial growth LED on the glass substrate；
Step S2: the wafer of the complete each functional layer of epitaxial growth is subjected to pixelation, Micro-LED array is made, and making
Without the removing of glass substrate after completion, but attenuated polishing is carried out to it；
Step S3: in glass substrate front, performing etching the position for needing to form through-hole, and etching depth is the one of glass substrate
Half thickness forms rounding bench-type groove, and fills metal in a groove；
Step S4: one layer of SiO is deposited in glass substrate front2Insulating layer, and etch the pole P and the pole N ohmic contact regions and
Via regions；
Step S5: one layer of metal is deposited in glass substrate front, and etches common-anode metal wire using designed mask plate；
Step S6: one layer of SiO is deposited again in glass substrate front2Insulating layer, and etch the pole N ohmic contact regions and lead to
Bore region；
Step S7: one layer of metal is deposited in glass substrate front, and etches common cathode metal wire using designed mask plate；
Step S8: at the back side of glass substrate, the etching of the other half depth of substrate, shape are carried out to the position for needing to form through-hole
At rounding bench-type groove, and metal is filled in a groove；
Step S9: one layer of metal is deposited at the glass substrate back side, and etches back metal cabling using designed mask plate
And metal Pad；
Step S10: by high-precision Bonding equipment by driving chip hot pressing in the glass substrate back side.
Compared with prior art, the invention has the following advantages that Micro-LED display screen structure of the invention and manufacture
Process is more convenient simple, and technology is more mature and stable, overcomes the transfer and bonding of Micro-LED design of LED manufacturing process
Problem, and solve the problems, such as that metal lead wire and driving chip occupy excess area in display screen.It can be in non-diverting nonbonding
Under conditions of complete the production of display screen, and realize full screen display, the development cost of product can be substantially reduced.The present invention is direct
Be made required Micro-LED array of display on substrate, and it is in this on the basis of be directly made into electrode required for driving and draw
Only by hot pressing driving chip a complete display screen can be realized in line, and process is simple, technology maturation and low in cost.Separately
Outside, yet another advantage of the present invention is that the full screen display of display screen can be realized, driving electrodes lead and driving chip are arranged
The gold thread lead of front and back is attached in the display screen back side, and by way of glass drilling, it in this way can be to avoid
Driving electrodes lead and driving chip occupy the additional areas outside display area, achieve the effect that full screen display.
Detailed description of the invention
Fig. 1 is the front view of Micro-LED display screen of the invention；
Fig. 2 is the area the A enlarged drawing of Fig. 1 of the invention；
Fig. 3 is the side view of Micro-LED display screen of the invention；
Fig. 4 is the area the B enlarged drawing of Fig. 3 of the invention；
Fig. 5 is the top view of Micro-LED display screen of the embodiment of the present invention；
Fig. 6 is the back view of Micro-LED display screen of the embodiment of the present invention；
In figure: 1- driving chip, 2- metal pad, 3- back metal cabling, 4- glass substrate, 5- through-hole, 6- common cathode metal
Line, 7- common-anode metal wire, the first SiO of 8-2Insulating layer, the 2nd SiO of 9-2Insulating layer, the pole the N groove part of 10-LED chip.
Specific embodiment
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate attached drawing, make detailed
It is carefully described as follows, but the present invention is not limited thereto.
Referring to figs. 1 to Fig. 6
A kind of Micro-LED display screen structure, including it is set to display screen front (glass substrate front) and by Micro-LED core
The array of display that piece is constituted, the Micro-LED chip of every each column of a line is connected through metal wire respectively in the array of display, and
A layer insulating is respectively arranged between the surface of array of display and the metal wire of row and column；The back side of the display screen is arranged
The back metal cabling 3 for thering are driving chip 1, metal pad 2 and several one end to be connected with driving chip, every back-side gold
Belong to cabling functionally to correspond with positive metal wire；The positive metal wire of the display screen and the back side are one-to-one
Back metal cabling connects through via hole mode and forms access.
In the present embodiment, the array of display of display screen is constituted using blue light Micro-LED chip, insulating layer uses 600nm
Thick SiO2, metal wire and back metal cabling use the gold with higher stability and conductive capability as conducting wire.Every a line
In contain 480 Micro-LED chips, 128 Micro-LED chips are contained in each column, the area Tu1Zhong A enlarged drawing part is
Single Micro-LED chip.The first SiO of one layer of 600nm thickness is deposited on the chip array of entire display screen2Insulating layer 8 leads to
Cross this layer of SiO2Insulating layer is isolated by each adjacent Micro-LED chip, avoids adjacent pixel shorts.
In the present embodiment, the array of display that the Micro-LED chip is constituted is directly to perform etching simultaneously on its substrate
Directly formed.
In the present embodiment, the substrate is for glass substrate 4 and for epitaxial growth LED chip, and substrate is in epitaxial growth
With after pixelation without being removed.The material of the glass substrate is sapphire (Al2O3), for epitaxial growth blue-ray LED with
And as metal wire, the carrier of back metal cabling and driving chip.Certainly, Sapphire Substrate is not as unique lining of the invention
Bottom materials, other glass substrates for being available for growth LED are suitable for the invention purpose.
In the present embodiment, the via hole mode be the left margin of substrate, the right along and lower edge perform etching and most
End form is at the through-hole 5 between front and back sides, and the through-hole forms through two-sided etching and fills metal inside through-hole, for connecting front
Common cathode, common-anode metal wire and back metal cabling.
In the present embodiment, the metal wire of the positive every each column of a line of display screen only extends to the Micro- of outermost
LED chip, and the overlapping place's setting of metal wire of the Micro-LED chip of the Micro-LED chip and each column of every a line is useful
In the 2nd SiO of isolation2Insulating layer 9.
In the present embodiment, the size of the driving chip is less than the area of array of display, and through the direct hot pressing of COG mode in
The back side of glass substrate.The SSD1352 of driving chip model Solomon Systech company, likewise, the driving chip type
Number only as a preferred embodiment.
In the present embodiment, the metal wire of the every a line in the display screen front is common cathode metal wire 6, the metal wire of each column
For common-anode metal wire 7.
In the present embodiment, the connection of the back metal cabling of common cathode metal wire 6 and the display screen back side in Fig. 1 is divided into two
Part, wherein odd-numbered line is attached by the through-hole on edge on the right of display screen and the back metal cabling at the display screen back side, even number
Row is attached by the through-hole of left margin and the back metal cabling at the display screen back side.Can intuitively it find out from Fig. 5.By
In metal wire itself there is certain resistance, thus the metal wire of longer Micro-LED cathode to ground terminal can bring it is bigger
Pressure drop, so as to cause the both ends Micro-LED voltage reduce, finally make its light emission luminance decline.Therefore by common cathode metal
Line carries out the right and left interlacing distribution, and so bright dark-part complementation of interlacing can make whole brightness more uniform.
In the present embodiment, the common-anode metal wire 7 in Fig. 1 all passes through the through-hole of display screen lower edge and the back side at the back side
Metal routing is attached, and can intuitively be found out from Fig. 5.2nd SiO29 is same in different height in insulating layer 9(Fig. 5
Layer SiO2Insulating layer, i.e. the 2nd SiO2Insulating layer), with a thickness of 600nm, the isolation for the ranks metal wire infall being used for is prevented
Short circuit is formed between cathode and anode.
In the present embodiment, the Micro-LED chip structure of use is positive assembling structure, need to carry out deep etching to GaN doped layer,
Expose n-GaN layers, therefore form groove on each chip, 10 correspond to this recess region in Fig. 2, equally heavy in this area
Product has SiO2Insulating layer and common cathode metal wire, are represented by dotted lines.Top view such as Fig. 5 of entire display screen.It is worth noting that,
Above-mentioned blue light Micro-LED, SiO2Insulating layer and golden material are only used as a kind of preferred embodiment provided in this example, any other
The Micro-LED that can be shone, insulating materials and conductive metallic material suitable for semiconductor technology are regarded as of the invention standby
Select scheme.
A kind of manufacturing method of Micro-LED display screen structure, comprising the following steps:
Step S1: using each function of Metallo-Organic Chemical Vapor deposition (MOCVD) method epitaxial growth LED on the glass substrate
Ergosphere, including GaN buffer layer, n-GaN layers, InGaN/GaN multiple quantum well layer and p-GaN layer；
Indium oxide layer tin (ITO) transparency conducting layer is sputtered by magnetically controlled sputter method in p-GaN layer, for enhancing anode sky
The diffusivity in cave；
The ITO in the eating away polar region N domain to be exposed；
Step S2: carrying out GaN doped layer deep etching, exposes n-GaN and makes the area N Ohmic contact, on the n-GaN layer basis etched into
It is upper further to be etched, until exposing the glass substrate of bottom, eventually form mutually independent Micro-LED pixel battle array
Column, and without the removing of glass substrate after completing, but attenuated polishing is carried out to it；
Step S3: in glass substrate front, the position for needing to form through-hole is carved using ICP-RIE deep etching method
Erosion, etching depth are a half thickness of glass substrate, form rounding bench-type groove, and fill metal in a groove；
Step S4: the first SiO is deposited in glass substrate front2Insulating layer, and etch the pole P and the pole N ohmic contact regions and
Via regions；
Step S5: one layer of metal is deposited in glass substrate front, and etches common-anode metal wire using designed mask plate；
Step S6: the 2nd SiO is deposited in glass substrate front2Insulating layer, and etch the pole N ohmic contact regions and through hole area
Domain；
Step S7: one layer of metal is deposited in glass substrate front, and etches common cathode metal wire using designed mask plate；
Step S8: at the back side of glass substrate, the etching of the other half depth of substrate, shape are carried out to the position for needing to form through-hole
At rounding bench-type groove, and metal is filled in a groove；
Step S9: one layer of metal is deposited at the glass substrate back side, and etches back metal cabling using designed mask plate
And metal Pad；
Step S10: using the Lambda high-precision Bonding equipment of FineTech company by driving chip hot pressing in glass substrate
The production of this display screen is completed at the back side.
In the present embodiment, in order to represent the structure of entire display screen, to of ranks Micro-LED chip in figure
Number is omitted, and is indicated with 3 points of ellipsis.It is worth mentioning that schematic diagram only for it is more intuitive show it is of the invention
The structure of middle display screen, therefore its geometric dimension ratio should not be used as the stringent characterization of full size.
The foregoing is merely presently preferred embodiments of the present invention, for the ordinary skill in the art, according to this hair
Bright introduction, designs a kind of various forms of Micro-LED display screen structures and manufacturing method does not need creative labor
It is dynamic, without departing from the principles and spirit of the present invention all equivalent changes done according to scope of the present invention patent, repair
Change, replacement and variant, is all covered by the present invention.
Claims (9)
1. a kind of Micro-LED display screen structure, which is characterized in that including being set to display screen front and by Micro-LED core
The array of display that piece is constituted, the Micro-LED chip of every each column of a line is connected through metal wire respectively in the array of display, and
A layer insulating is respectively arranged between the surface of array of display and the metal wire of row and column；The back side of the display screen is arranged
The back metal cabling for thering are driving chip, metal pad and several one end to be connected with driving chip, every back metal
Cabling is functionally corresponded with positive metal wire；The positive metal wire of the display screen and the back side are carried on the back correspondingly
Face metal routing connects through via hole mode and forms access.
2. a kind of Micro-LED display screen structure according to claim 1, which is characterized in that the Micro-LED chip
The array of display of composition is directly to perform etching on its substrate and directly formed.
3. a kind of structure of Micro-LED display screen according to claim 2, which is characterized in that the substrate is glass
Substrate and for epitaxial growth LED chip, and substrate after epitaxial growth and pixelation without being removed.
4. a kind of Micro-LED display screen structure according to claim 1,2 or 3, which is characterized in that the display screen is just
The metal wire of each column of every a line in face only extends to the Micro-LED chip of outermost, and the Micro-LED chip of every a line
Place, which is overlapped, with the metal wire of the Micro-LED chip of each column is provided with the insulating layer for isolation.
5. a kind of structure of Micro-LED display screen according to claim 4, which is characterized in that the display screen front
The metal wire of every a line is common cathode metal wire, and the metal wire of each column is common-anode metal wire, and the insulating layer is SiO2Absolutely
Edge layer.
6. a kind of according to claim 1, Micro-LED display screen structure described in 2,3 or 5, which is characterized in that the driving core
The size of piece is less than the area of array of display, and through the direct hot pressing of COG mode in the back side of glass substrate.
7. a kind of Micro-LED display screen structure according to claim 2 or 3, which is characterized in that the via hole mode is
It is performed etching at the edge of substrate and ultimately forms the through-hole between front and back sides.
8. a kind of Micro-LED display screen structure according to claim 7, which is characterized in that the through-hole is through two-sided quarter
Erosion forms and fills metal inside through-hole.
9. a kind of manufacturing method applied to a kind of Micro-LED display screen structure described in claim 3 or 8, feature exist
In, comprising the following steps:
Step S1: each functional layer of epitaxial growth LED on the glass substrate；
Step S2: the wafer of the complete each functional layer of epitaxial growth is subjected to pixelation, Micro-LED array is made, and making
Without the removing of glass substrate after completion, but attenuated polishing is carried out to it；
Step S3: in glass substrate front, performing etching the position for needing to form through-hole, and etching depth is the one of glass substrate
Half thickness forms rounding bench-type groove, and fills metal in a groove；
Step S4: one layer of SiO is deposited in glass substrate front2Insulating layer, and etch the pole P and the pole N ohmic contact regions and lead to
Bore region；
Step S5: one layer of metal is deposited in glass substrate front, and etches common-anode metal wire using designed mask plate；
Step S6: one layer of SiO is deposited again in glass substrate front2Insulating layer, and etch the pole N ohmic contact regions and lead to
Bore region；
Step S7: one layer of metal is deposited in glass substrate front, and etches common cathode metal wire using designed mask plate；
Step S8: at the back side of glass substrate, the etching of the other half depth of substrate, shape are carried out to the position for needing to form through-hole
At rounding bench-type groove, and metal is filled in a groove；
Step S9: one layer of metal is deposited at the glass substrate back side, and etches back metal cabling using designed mask plate
And metal Pad；
Step S10: by high-precision Bonding equipment by driving chip hot pressing in the glass substrate back side.
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