CN109738792B - SiPM array signal reading method and device and SiPM array module - Google Patents
SiPM array signal reading method and device and SiPM array module Download PDFInfo
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Abstract
The invention is suitable for the technical field of electronic information, and provides a SiPM array signal reading method, a SiPM array signal reading device and a SiPM array module, wherein the method comprises the following steps: when an SiPM unit on the SiPM array collects an optical signal, the optical signal is converted into a current signal through the SiPM unit, the current signal is distributed to a reading electrode arranged on a conductive medium layer through a conductive medium layer connected with the SiPM unit, the current signal is output through the reading electrode, and the position information of the SiPM unit on the SiPM array is determined according to the current output of each reading electrode, so that the compression effect of a reading channel of the SiPM array is effectively improved through the conductive medium layer and the reading electrode which are arranged on a substrate of the SiPM array, discrete components such as resistance and capacitance are not adopted on the conductive medium layer, redesign of the components is not needed when the size of the SiPM array changes, and expansion and integration of the SiPM array are facilitated.
Description
Technical Field
The invention belongs to the technical field of electronic information, and particularly relates to a signal reading method and device of an SiPM array and an SiPM array module.
Background
Sipms are silicon photomultipliers, and are mainly used for detecting weak optical signals, converting detected optical pulses into current pulses, receiving the current pulses by a readout circuit, and processing the current pulses by a corresponding processor to obtain information contained in the detected optical signals.
The SiPM array is a detector for detecting the position information of weak light signals, and a plurality of SiPM units are used as photosensitive elements on a two-dimensional plane and are provided with corresponding reading circuits to obtain the information of detected light. Generally, each SiPM unit outputs one signal independently, and needs one readout channel. However, as the detection area increases and each detection unit shrinks, the number of SiPM units in an array increases, and the large number of channels of readout electronics is difficult to implement in specific engineering applications.
Currently, the readout method of the SiPM array mainly includes single channel readout, resistance network readout and row and column readout. The single channel reading is that each SiPM unit in the array is configured with a reading channel, and which channel has a signal to indicate which position the SiPM unit detects the optical signal. The resistance network reading is to connect current signals detected by SiPM units at different positions in the array to different current outlets of the resistance network, and carry out inversion calculation according to current signal quantity on the current outlets to obtain position information of the signals. The row-column reading method is to use a resistor or a capacitor to shunt current or divide voltage in the row direction or the column direction respectively, so as to compress channels, but the method depends on a resistor or a capacitor component to realize, hardware needs to be redesigned after the number of rows or columns is changed, and integration is difficult.
Disclosure of Invention
The invention aims to provide a signal reading method and device of an SiPM array and an SiPM array module, and aims to solve the problems that the prior art cannot provide an effective signal reading method of the SiPM array, so that the SiPM array is complex to realize and difficult to integrate when a reading channel is compressed.
In one aspect, the present invention provides a signal readout method for an SiPM array, the method comprising the steps of:
when an SiPM unit on the SiPM array collects an optical signal, converting the optical signal into a current signal through the SiPM unit;
distributing the current signals to readout electrodes arranged on the conductive medium layer through the conductive medium layer connected with all the SiPM units;
outputting the current signal through the readout electrode;
and determining the position information of the SiPM units on the SiPM array according to the current output of each readout electrode.
In another aspect, the present invention provides a signal readout arrangement for an SiPM array, the arrangement comprising:
the signal acquisition and conversion unit is used for converting an optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array acquires the optical signal;
the signal distribution unit is used for distributing the current signals to the reading electrodes arranged on the conductive medium layer through the conductive medium layer connected with all the SiPM units;
a signal output unit for outputting the current signal through the readout electrode; and
and the position determining unit is used for determining the position information of the SiPM units on the SiPM array according to the current output of each readout electrode.
In another aspect, the present invention also provides an SiPM array module, including:
the substrate is made of an insulating material;
the SiPM unit is positioned on the substrate and forms a SiPM array and is used for collecting optical signals and converting the optical signals into current signals;
the conductive medium layer is connected with all the SiPM units and is used for distributing current signals converted by the SiPM units to the reading electrodes on the conductive medium layer; and
and the readout electrode is used for collecting and outputting the distributed current signals.
According to the invention, SiPM units on the SiPM array collect optical signals, convert the optical signals into current signals, distribute the current signals to the reading electrodes on the conductive medium layer through the conductive medium layer connected with all the SiPM units, output the current signals through the reading electrodes, and determine the position information of the SiPM units on the SiPM array according to the current signals output by the reading electrodes, so that the compression of the reading channel of the SiPM array is realized through the conductive medium layer and the reading electrodes, and discrete components such as resistance and capacitance are not adopted on the conductive medium layer, the size change of the SiPM array does not need to redesign the components, and the expansion and integration of the SiPM array are facilitated.
Drawings
Fig. 1 is a flowchart illustrating an implementation of a signal readout method for an SiPM array according to an embodiment of the present invention;
fig. 2 is a diagram illustrating a distribution example of a sensing electrode on a conductive medium layer in a signal sensing method for an SiPM array according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a signal readout apparatus of an SiPM array according to a second embodiment of the present invention; and
fig. 4 is a schematic structural diagram of an SiPM array module according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The following detailed description of specific implementations of the present invention is provided in conjunction with specific embodiments:
the first embodiment is as follows:
fig. 1 shows a flow of implementing a signal readout method for an SiPM array according to a first embodiment of the present invention, and for convenience of description, only the portions related to the first embodiment of the present invention are shown, and detailed descriptions are as follows:
in step S101, when the SiPM unit on the SiPM array collects an optical signal, the optical signal is converted into a current signal by the SiPM unit.
The embodiment of the invention is suitable for the SiPM array. The SiPM array includes N × M SiPM units, and the values of N and M are determined by the skilled person according to the actual situation, and are not limited herein. In practical applications, each SiPM unit in the SiPM array is configured to detect an optical signal and convert the detected optical signal into a current signal, and the current signal is read out by a readout channel, and the position of the SiPM unit acquiring the optical signal in the SiPM array is determined. In the embodiment of the present invention, the SiPM unit may convert the optical signal into the current signal in a conventional manner, which is not limited herein.
In step S102, a current signal is distributed to the readout electrode provided on the conductive medium layer through the conductive medium layer connected to all SiPM cells.
In the embodiment of the invention, after the SiPM unit collects the optical signal and converts the optical signal into the corresponding current signal, the current signal is sent to the conductive medium layer connected with all the SiPM units, the current signal is dispersed on the conductive medium layer, and the readout electrode on the conductive medium layer collects the current dispersed on the conductive medium layer.
Preferably, the conductive medium layer covers the substrate of the SiPM array, so that the SiPM array with different sizes can be adapted only by adjusting the coverage area of the conductive medium layer on the substrate, and the requirement of redesigning discrete components when the size of the SiPM array changes can be avoided in a mode of covering the SiPM array with the conductive medium layer. For example, the 4 x 4 SiPM array becomes an 8 x 8 SiPM array, and only the conductive medium layer needs to be adjusted in size, without involving redesign of the remaining design parameters, so that the SiPM array is easy to expand and easy to process in large quantities.
The conductive medium layer can be positioned between the substrate and the SiPM units, or the substrate can be positioned between the conductive medium layer and the SiPM units, and when the substrate is positioned between the conductive medium layer and the SiPM units, the substrate can be perforated to realize the connection of each SiPM unit and the conductive medium layer.
Preferably, the SiPM unit injects the converted current signal into the conductive medium layer through a current injection electrode on the conductive medium layer, wherein the SiPM unit corresponds to the current injection electrode one to one, so that the position of the SiPM unit on the SiPM array is mapped to the position of the current injection electrode on the conductive medium layer, and the position information of the SiPM unit on the SiPM array can be determined by determining the injection position of the current signal on the conductive medium layer.
In step S103, a current signal is output through the readout electrode.
In the embodiment of the invention, after the current signal is collected by the reading electrode on the conductive medium layer, the collected current signal is output so that a processor connected with the SiPM array can analyze the current signal, and the information contained in the current signal and the position of the SiPM unit currently collecting the optical signal on the SiPM array are obtained through analysis, so that the effect of reading channel compression is improved by laying the conductive medium layer on the substrate, arranging the reading electrode on the conductive medium layer, and dispersing the current signal to each reading electrode on the conductive medium layer without arranging an independent reading channel for each SiPM unit.
Preferably, the sensing electrodes are disposed at edge corners of the conductive medium layer, for example, when the conductive medium layer is a quadrangle, the sensing electrodes may be disposed at four corners of the quadrangle, respectively, so that different sensing electrodes collect current signals dispersed in different directions.
In step S104, position information of the SiPM cells on the SiPM array is determined based on the current output of each readout electrode.
In the embodiment of the invention, when each readout electrode outputs the collected current signal, the current magnitude of the current signal output by each readout electrode is recorded, and the two-dimensional position of the currently acquired SiPM unit on the SiPM array is calculated according to the current magnitude of the current signal output by each readout electrode. When the positions of the reading electrodes are known and the number of the reading electrodes is not less than 3, the two-dimensional positions of the SiPM units on the SiPM array can be determined according to the positions of the reading electrodes, the current magnitude of current signals output by the reading electrodes and the charge distribution principle.
Preferably, as shown in fig. 2, when the number of the readout electrodes is 4 and the readout electrodes are respectively located at the four corners A, B, C, D of the conductive medium layer, with one of the readout electrodes as the origin of coordinates, for example, with the readout electrode C as the origin of coordinates, the position information of the current injection point injecting the current signal in the conductive medium layer is calculated by the following formula:
X＝(IA+IB)/(IA+IB+Ic+ID)，Y＝(IA+ID)/(IA+IB+Ic+ID) Wherein, IA、IB、Ic、IDThe current magnitudes of the current signals output by the readout electrode a, the readout electrode B, the readout electrode C and the readout electrode D, respectively, (X, Y) is the two-dimensional coordinate of the SiPM unit currently collecting the optical signal on the SiPM array.
Preferably, the number of the readout electrodes is 4, and although the position location on the two-dimensional plane can be realized by 3 readout electrodes, the complexity of the location using 3 readout electrodes is high, and the computational complexity of the location can be reduced by performing the location using 4 readout electrodes.
Preferably, the conductive medium layer is a conductive material with a specific resistivity, and may be a semiconductor material, such as a germanium film, so as to avoid that the SiPM unit cannot be located by the current signal output by the readout electrode due to too small surface resistivity of the conductive medium layer, and also avoid that the current signal cannot diffuse in the conductive medium layer due to too large surface resistivity of the conductive medium layer. The surface resistivity is determined by the factors of the material of the conductive medium layer, the thickness of the film, the processing technology and the like, the space structure of the conductive medium layer is simple, the conductive medium layer is a relatively thin film, and the conductive medium layer can be directly coated on the substrate of the SiPM array. The preferred range of the conductive layer resistivity is 1 K.OMEGA.m2～1MΩ/m2。
Preferably, the substrate is an insulating material, and the substrate is prevented from influencing the diffusion of the current signal in the conductive medium layer.
In the embodiment of the invention, the current signals obtained by converting the SiPM units are diffused through the conductive medium layer, the diffused current signals are collected by the reading electrodes positioned at different positions on the conductive medium layer, the collected current signals are output through the reading electrodes, and the SiPM units are positioned according to the current signals output by the reading electrodes, so that the output channel of the SiPM array is effectively compressed, discrete components such as resistance and capacitance do not exist on the conductive medium layer, when the size of the SiPM array changes, the components on the medium layer do not need to be redesigned, the conductive medium layer is easy to process, and the expansion and integration of the SiPM array are easy.
Example two:
fig. 3 shows a structure of a signal readout device of an SiPM array according to a second embodiment of the present invention, and for convenience of description, only the portions related to the second embodiment of the present invention are shown, where the structure includes:
and the signal acquisition and conversion unit 31 is used for converting the optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array acquires the optical signal.
And a signal distribution unit 32 for distributing the current signal to the readout electrode provided on the conductive medium layer through the conductive medium layer connected to all the SiPM cells.
In the embodiment of the invention, after the SiPM unit collects the optical signal and converts the optical signal into the corresponding current signal, the current signal is sent to the conductive medium layer connected with all the SiPM units, the current signal is dispersed on the conductive medium layer, and the readout electrode on the conductive medium layer collects the current dispersed on the conductive medium layer.
Preferably, the conductive medium layer covers the substrate of the SiPM array, so that the situation that discrete components need to be redesigned when the size of the SiPM array changes can be avoided in a mode of covering the SiPM array by the conductive medium layer, the SiPM array with different sizes can be adapted only by adjusting the covering area of the conductive medium layer on the substrate, redesign of residual design parameters is not involved, the SiPM array is easy to expand, and a large number of processing is easy.
The conductive medium layer can be positioned between the substrate and the SiPM units, or the substrate can be positioned between the conductive medium layer and the SiPM units, and when the substrate is positioned between the conductive medium layer and the SiPM units, the substrate can be perforated to realize the connection of each SiPM unit and the conductive medium layer.
Preferably, the SiPM unit injects the converted current signal into the conductive medium layer through a current injection electrode on the conductive medium layer, wherein the SiPM unit corresponds to the current injection electrode one to one, so that the position of the SiPM unit on the SiPM array is mapped to the position of the current injection electrode on the conductive medium layer, and the position information of the SiPM unit on the SiPM array can be determined by determining the injection position of the current signal on the conductive medium layer.
A signal output unit 33 for outputting a current signal through the readout electrode.
In the embodiment of the invention, after the current signal is collected by the reading electrode on the conductive medium layer, the collected current signal is output so that a processor connected with the SiPM array can analyze the current signal, and the information contained in the current signal and the position of the SiPM unit currently collecting the optical signal on the SiPM array are obtained through analysis, so that the effect of reading channel compression is improved by laying the conductive medium layer on the substrate, arranging the reading electrode on the conductive medium layer, and dispersing the current signal to each reading electrode on the conductive medium layer without arranging an independent reading channel for each SiPM unit.
Preferably, the sensing electrodes are disposed at edge corners of the conductive medium layer, for example, when the conductive medium layer is a quadrangle, the sensing electrodes may be disposed at four corners of the quadrangle, respectively, so that different sensing electrodes collect current signals dispersed in different directions.
A position determining unit 34 for determining position information of the SiPM cells on the SiPM array based on the current output of each readout electrode.
In the embodiment of the invention, when each readout electrode outputs the collected current signal, the current magnitude of the current signal output by each readout electrode is recorded, and the two-dimensional position of the currently acquired SiPM unit on the SiPM array is calculated according to the current magnitude of the current signal output by each readout electrode. When the positions of the reading electrodes are known and the number of the reading electrodes is not less than 3, the two-dimensional positions of the SiPM units on the SiPM array can be determined according to the positions of the reading electrodes, the current magnitude of current signals output by the reading electrodes and the charge distribution principle.
Preferably, the number of the readout electrodes is 4, and although the position location on the two-dimensional plane can be realized by 3 readout electrodes, the complexity of the location using 3 readout electrodes is high, and the computational complexity of the location can be reduced by performing the location using 4 readout electrodes.
Preferably, the conductive medium layer is a conductive material with a specific resistivity, and may be a semiconductor material, such as a germanium film, so as to avoid that the SiPM unit cannot be located by the current signal output by the readout electrode due to too small surface resistivity of the conductive medium layer, and also avoid that the current signal cannot diffuse in the conductive medium layer due to too large surface resistivity of the conductive medium layer. The surface resistivity is determined by the factors of the material of the conductive medium layer, the thickness of the film, the processing technology and the like, the space structure of the conductive medium layer is simple, the conductive medium layer is a relatively thin film, and the conductive medium layer can be directly coated on the substrate of the SiPM array. The preferred range of the conductive layer resistivity is 1 K.OMEGA.m2～1MΩ/m2。
Preferably, the substrate is an insulating material, and the substrate is prevented from influencing the diffusion of the current signal in the conductive medium layer. In the embodiment of the invention, the current signals obtained by converting the SiPM units are diffused through the conductive medium layer, the diffused current signals are collected by the reading electrodes positioned at different positions on the conductive medium layer, the collected current signals are output through the reading electrodes, and the SiPM units are positioned according to the current signals output by the reading electrodes, so that the output channel of the SiPM array is effectively compressed, discrete components such as resistance and capacitance do not exist on the conductive medium layer, when the size of the SiPM array changes, the components on the medium layer do not need to be redesigned, the conductive medium layer is easy to process, and the expansion and integration of the SiPM array are easy.
In the embodiment of the present invention, each unit of the signal readout apparatus of the SiPM array may be implemented by a corresponding hardware or software unit, and each unit may be an independent software or hardware unit, or may be integrated into a software or hardware unit, which is not limited herein.
Example three:
fig. 4 shows a structure of an SiPM array module according to a third embodiment of the present invention, and for convenience of description, only the parts related to the third embodiment of the present invention are shown, where the structure includes:
a substrate 41, the substrate 41 being an insulating material;
an SiPM unit 43 located on the substrate 41 and forming an SiPM array 42 for collecting optical signals and converting the optical signals into current signals;
a conductive medium layer 44 connected to all the SiPM cells 43 for distributing the current signals converted by the SiPM cells 43 to a readout electrode 45 located on the conductive medium layer 44; and
and a readout electrode 45 for collecting and outputting the distributed current signal.
In the embodiment of the present invention, N × M SiPM units 43 form the SiPM array 42, and the values of N and M are determined by the skilled person according to the actual situation, and are not limited herein. After the SiPM unit 43 collects the optical signal and converts the collected optical signal into a current signal, the current signal is diffused through the conductive medium layer 44, the readout electrodes 45 located at different positions on the conductive medium layer 44 collect the current signal scattered to the corresponding position, the readout electrodes 45 output the collected current signal, and a processor connected to the SiPM array 42 analyzes the current signal and determines the position information of the SiPM unit currently collecting the optical signal on the SiPM array 42.
Preferably, the conductive medium layer 44 covers the substrate 41 of the SiPM array 42, so that the situation that discrete components need to be redesigned when the size of the SiPM array 42 changes can be avoided by covering the conductive medium layer 44, and the SiPM array 42 with different sizes can be adapted by only adjusting the coverage area of the conductive medium layer 44 on the substrate 41 without involving redesign of remaining design parameters, so that the SiPM array 42 is easily expanded and easily processed in a large number.
The conductive medium layer 44 may be located between the substrate 41 and the SiPM units 43, or the substrate 41 may be located between the conductive medium layer 44 and the SiPM units 43, and when the substrate 41 is located between the conductive medium layer 44 and the SiPM units 43, the substrate 41 may be perforated to realize connection between each SiPM unit 43 and the conductive medium layer 44.
Preferably, the conductive medium layer 44 is a conductive material with a specific resistivity, and may be a semiconductor material, such as a germanium film, to avoid that the surface resistivity of the conductive medium layer 44 is too small to couple the current signal output by the readout electrode 45The SiPM cells 43 are positioned to avoid the current signal from diffusing through the conductive medium layer 44 due to too large sheet resistivity of the conductive medium layer 44. The surface resistivity is determined by the material of the conductive medium layer 44, the thickness of the film, the processing technology and other factors, the space structure of the conductive medium layer 44 is simple, and the conductive medium layer is a relatively thin film and can be directly coated on the substrate 41 of the SiPM array 42. The preferred range of the sheet resistivity of the conductive dielectric layer 44 is 1 K.OMEGA.m2～1MΩ/m2。
Preferably, the output end of the SiPM unit 43 is connected to the conductive medium layer 44 through the corresponding current injection electrode 46, and the current signal converted by the SiPM unit 43 is injected into the conductive medium layer 44 through the current injection electrode 46, wherein the SiPM unit 43 is in one-to-one correspondence with the current injection electrode 46, so that the position of the SiPM unit 43 on the SiPM array 42 is mapped to the position of the current injection electrode 46 on the conductive medium layer 44, and the position information of the SiPM unit 43 on the SiPM array 42 can be determined by determining the injection position of the current signal on the conductive medium layer 44.
Preferably, the readout electrodes 45 are located at the edges of the conductive medium layer 44 so that different readout electrodes 45 collect current signals that are dispersed in different directions.
In an embodiment of the present invention, when the positions of the readout electrodes 45 are known and the number of the readout electrodes 45 is not less than 3, the processor may determine the two-dimensional position of the SiPM cell 43 on the SiPM array 42 according to the positions of the readout electrodes 45, the current magnitude of the current signals output by the readout electrodes 45, and the charge distribution principle. Preferably, the number of the readout electrodes 45 is 4, and although the position positioning on the two-dimensional plane can be realized by 3 readout electrodes 45, the positioning using 3 readout electrodes 45 has high complexity, and the calculation complexity of the positioning can be reduced by performing the positioning using 4 readout electrodes 45.
In order to clearly show the structure of the SiPM array module in the embodiment of the present invention, the SiPM array module is shown in fig. 4 divided into two parts, one part is the SiPM array 42 formed by SiPM units 43, and the other part includes the substrate 41, the conductive medium layer 44, the readout electrode 45 and the current injection electrode 46, which are connected together in the actual structure. In addition, the position and number of the readout electrodes 45 in fig. 4 are not limited to the position and number of the readout electrodes 45 according to the embodiment of the present invention.
In the embodiment of the invention, the SiPM array module comprises a substrate, SiPM units forming the SiPM array, a conductive medium layer and a reading electrode, wherein the conductive medium layer diffuses current signals obtained by converting the SiPM units, the reading electrode positioned at different positions on the conductive medium layer collects the diffused current signals, and the reading electrode outputs the collected current signals, so that an output channel of the SiPM array is effectively compressed, discrete components such as resistance and capacitance do not exist on the conductive medium layer, when the size of the SiPM array changes, the components on the medium layer do not need to be redesigned, the conductive medium layer is easy to process, and the expansion and integration of the SiPM array are easy.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A method of signal readout of a SiPM array, the method comprising the steps of:
when an SiPM unit on the SiPM array collects an optical signal, converting the optical signal into a current signal through the SiPM unit;
distributing the current signals to readout electrodes arranged on the conductive medium layer through the conductive medium layer connected with all the SiPM units;
outputting the current signal through the readout electrode;
and determining the position information of the SiPM units on the SiPM array according to the current output of each readout electrode.
2. The method of claim 1, wherein after the step of converting the optical signal to a current signal by the SiPM cell and before the step of distributing the current signal to a readout electrode disposed on the conductive medium layer, the method further comprises:
and injecting the current signal into the conductive medium layer through a current injection electrode on the conductive medium layer, wherein the SiPM units correspond to the current injection electrodes one to one.
3. The method of claim 1, wherein the step of distributing the current signal to a sense electrode disposed on the conductive medium layer comprises:
and diffusing the current signal through the conductive medium layer, and collecting the diffused current signal by the reading electrodes positioned at different positions on the conductive medium layer.
4. The method of claim 1, wherein the step of determining positional information of the SiPM units on the SiPM array comprises:
and calculating the two-dimensional position of the SiPM unit on the SiPM array according to the current magnitude of the current signal output by each readout electrode.
5. A signal readout arrangement for an SiPM array, the arrangement comprising:
the signal acquisition and conversion unit is used for converting an optical signal into a current signal through the SiPM unit when the SiPM unit on the SiPM array acquires the optical signal;
the signal distribution unit is used for distributing the current signals to the reading electrodes arranged on the conductive medium layer through the conductive medium layer connected with all the SiPM units;
a signal output unit for outputting the current signal through the readout electrode; and
and the position determining unit is used for determining the position information of the SiPM units on the SiPM array according to the current output of each readout electrode.
6. An SiPM array module, comprising:
the substrate is made of an insulating material;
the SiPM unit is positioned on the substrate and forms a SiPM array and is used for collecting optical signals and converting the optical signals into current signals;
the conductive medium layer is connected with all the SiPM units and is used for distributing current signals converted by the SiPM units to the reading electrodes on the conductive medium layer; and
and the readout electrode is used for collecting and outputting the distributed current signals.
7. The SiPM array module of claim 6, wherein said conductive dielectric layer overlies said substrate.
8. The SiPM array module of claim 6, wherein the conductive media plane resistivity is in the range of 1K Ω/m2～1MΩ/m2。
9. The SiPM array module of claim 6, wherein the output terminals of the SiPM cells are connected to the conductive medium layers by corresponding current injection electrodes.
10. The SiPM array module of claim 6, wherein said readout electrodes are located at an edge of said conductive medium layer.
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| CN109738792A (en) | 2019-05-10 |
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