CN109660227A - Thin-film bulk acoustic wave filter and its packaging method - Google Patents
Thin-film bulk acoustic wave filter and its packaging method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Present invention discloses a kind of thin-film bulk acoustic wave filter and its packaging methods, the filter includes silicon substrate, the multilayer dielectric layer being deposited on silicon substrate front, the FBAR device being deposited on the insulating layer of top, back chamber and at least two conductive columns, and FBAR device includes lower electrode, piezoelectric material layer and the top electrode that the top surface of edge layer is sequentially depositing from the bottom up of alienating oneself；Back chamber is formed from the back-etching of silicon substrate to lower electrode, and carrying on the back the corresponding position of chamber is piezoelectric vibration effective coverage, and conductive column draws upper and lower electrode from the back side of silicon substrate.The present invention has many advantages, such as to increase FBAR device mechanical firmness, improves FBAR device performance, saves electrode extraction space, and reliability is higher, can protect the piezoelectric vibration effective coverage of FBAR device.
Description
Technical field
The present invention relates to a kind of thin-film bulk acoustic wave filter more particularly to a kind of film bulk acoustics for wafer-level packaging
The structure and its packaging method of filter.
Background technique
Thin film bulk acoustic wave resonator (Film BulkAcoustic Resonator, FBAR) is used as MEMS (Micro-
Electro-Mechanical System, MEMS) device important member, just play important work in the communications field
With especially FBAR filter, in radio-frequency filter field, market share is increasing.Data show, nearly ten years at
Long most fast MEMS element type is exactly FBAR filter.FBAR filter is since with the small grade of size, resonance frequency is high, quality
Factor is high, and the good characteristics such as power capacity is big, roll effect is good gradually replace traditional surface acoustic wave filter
(surface acoustic wave, SAW) and ceramic filter.
FBAR is mainly made of upper layer and lower layer metal electrode and the piezoelectric material being clipped in the middle, by applying radio-frequency voltage
On the electrode, motivate bulk acoustic wave to complete resonance in piezoelectric material.During actual fabrication FBAR, need to consider such as
Bulk acoustic wave is limited in piezoelectric vibration heap by what as far as possible, and otherwise acoustic wave energy has larger leakage or loss will lead to outside electrode
Electromechanical coupling factor and quality factor decline, influence the resonance performance of entire device.According to electromagnetic field microwave theory, when connect negative
When the impedance of load is zero or is infinitely great, transmission state will be pure standing wave state, that is, total reflection state, therefore we can incite somebody to action
The up-and-down boundary of piezoelectric vibration heap sandwich structure is designed to that acoustic impedance is zero or infinity.
For the requirement for realizing above-mentioned acoustic impedance, typical FBAR device architecture is divided into three kinds: the first is back etching FBAR
Structure contacts the lower electrode of device with air by back chamber etching and realizes zero acoustic impedance boundaries；Second is air-gap type
FBAR structure makes to form air-gap zero acoustic impedance boundaries of realization below piezoelectric vibration heap region by the etching of sacrificial layer；Third
It kind is Bragg type, being implemented as acoustic impedance by forming the Bragg reflecting layer being alternately stacked below piezoelectric vibration heap region is
Zero or infinitely great.
Traditional back etching FBAR structure etches formation back chamber since the back of device, keeps device hanging.In volume production work
When skill, the Silicon Wafer back side is largely removed, and forms back chamber array, after cutting forms individual devices, the hanging back side can be made
At the mechanical stability that device is very poor.It, can be in one layer thin of SiO2 layer of silicon chip surface growth generally in order to increase mechanical firmness
As supporting layer, but it is reduction of the performance of device.Traditional FBAR encapsulation is usually bonded nut cap wafer in front, forms lid
Piezoelectric vibration effective coverage of the cap chamber to protect FBAR device, then pass through metal lead wire for FBAR device from the through-hole of nut cap piece
The positive and negative electrode of part is drawn, and certainly will need to reserve biggish lead areas when packaged by the way of metal lead wire, but tight
The micromation of FBAR device, and the higher temperature of wafer bonding process requirement are affected again, affect the multiplicity of material selection
Property, the reliability of FBAR device is impacted, and complex process.
Summary of the invention
The main purpose of the present invention is to provide a kind of thin-film bulk acoustic wave filter and its packaging methods, and then overcome existing
The defects of technology.
To achieve the above object, the following technical solutions are proposed by the present invention: a kind of thin-film bulk acoustic wave filter may include:
Silicon substrate comprising opposite front and back,
Multilayer dielectric layer is deposited on the front of the silicon substrate；
FBAR device is deposited on the insulating layer of top, the FBAR device include alienate oneself edge layer top surface from
Under the lower electrode, piezoelectric material layer and the top electrode that are up sequentially depositing；
Chamber is carried on the back, is formed from the back-etching of silicon substrate to lower electrode, and the corresponding position of the back chamber is piezoelectric vibration
Effective coverage；
At least two conductive columns, the conductive column draw the top electrode and lower electrode from the back side of silicon substrate.
Preferably, the front of the silicon substrate, other every layer insulatings in addition to top insulating layer the equal shape in upper surface
At rough interlocking tooth face.
Preferably, the lower electrode, is deposited on the insulating layer of top, and the lower electrode includes carving between the two
The lower electrode body portion and lower electrode lead-out part that eating off is opened；
The piezoelectric material layer is deposited on lower electrode, and the piezoelectric material layer corresponds to the lower electrode lead-out part
One first groove is arranged in position；
The top electrode, is deposited on piezoelectric material layer, and the top electrode extends to the lower electricity by the first groove
Pole lead division, and flushed with the lower electrode lead-out part.
Preferably, the lower electrode, is deposited on the insulating layer of top, and the lower electrode includes carving between the two
The lower electrode body portion and lower electrode lead-out part that eating off is opened；
The piezoelectric material layer is deposited on lower electrode, and is etched on the piezoelectric material layer and shaken around the piezoelectricity
Swing one week the second groove in effective coverage；
The top electrode, is deposited on piezoelectric material layer, and the top electrode includes the top electrode main part that etching disconnects
With top electrode lead division, the top electrode lead division is connect by the second groove with lower electrode body portion, the top electrode main body
Portion extends to the lower electrode lead-out part by the second groove, and flushes with the lower electrode lead-out part.
Preferably, the filter further includes the Bragg reflecting layer being deposited in the top electrode and is deposited on the cloth
Passivation layer on glug reflecting layer.
Preferably, when the top electrode, Bragg reflecting layer deposition that first groove or the second recess sidewall is complete
Covering.
Preferably, the passivation layer with a thickness of 10 μm -15 μm.
Preferably, it is provided with UBM layer on the conductive column, the top electrode and lower electrode is drawn, and on the UBM layer
It is implanted with soldered ball.
The present invention also provides another technical solutions: a kind of packaging method of thin-film bulk acoustic wave filter, comprising:
S1 deposits multilayer dielectric layer on the front of silicon substrate；
S2, deposits FBAR device on the insulating layer of top, and the FBAR device includes the top surface of edge layer of alienating oneself
Lower electrode, piezoelectric material layer and the top electrode being sequentially depositing from the bottom up；
S3, etching back chamber and through-hole after the back side of silicon substrate carries out attenuated polishing, the back chamber and through-hole are served as a contrast from silicon
The back-etching at bottom to lower electrode is formed, and plating forms conductive column in through-hole, then makes UBM layer on the conductive column,
Upper and lower electrode is drawn by the conductive column from the back side of silicon substrate.
S4 finally plants soldered ball on the UBM layer, completes the encapsulation of FBAR device.
Preferably, in S1, before depositing insulating layer, by silicon substrate front, and, it will when depositing next layer insulating
The upper surface of a upper layer insulating, is bombarded with plasma, and etching forms rough interlocking tooth face.
Preferably, the S2 includes:
S21, electrode under being deposited on the insulating layer of top, and form lower electrode pattern, while will be described under
Electrode etch disconnects, and forms lower electrode body portion and lower electrode lead-out part；
S22, the depositing piezoelectric material layer on the lower electrode correspond to the lower electrode on the piezoelectric material layer and draw
First groove at the position etching in portion；
S23, deposits top electrode on the piezoelectric material layer, and the top electrode extends to the lower electricity by the first groove
Pole lead division, and flushed with the lower electrode lead-out part.
Preferably, the S2 includes:
S21, electrode under being deposited on the insulating layer of top, and form lower electrode pattern, while will be described under
Electrode etch disconnects, and forms lower electrode body portion and lower electrode lead-out part；
S22, the depositing piezoelectric material layer on the lower electrode are etched on the piezoelectric material layer around the piezoelectricity
Vibrate one week the second groove in effective coverage；
S23 deposits top electrode on the piezoelectric material layer, and carries out pattern etching to the top electrode, on described
Electrode etch is divided into the top electrode main part and top electrode lead division of disconnection, and the top electrode lead division is by the second groove under
The connection of electrode body portion, the top electrode main part extend to the lower electrode lead-out part by the second groove, and with it is described under
Electrode lead-out part flushes.
Preferably, after the S3 further include: be sequentially depositing Bragg reflecting layer and passivation layer in the top electrode.
The beneficial effects of the present invention are:
1, piezoelectric vibration effective coverage is produced on multilayer insulation supporting layer by back of the invention etching FBAR device,
Between multilayer dielectric layer and between the insulating layer and silicon substrate of the bottom, rough interlocking tooth contact surface is formed, further
The fastness of mechanical support is increased, in order not to allow insulating layer to influence the performance of FBAR device, when etching carries on the back chamber, while will pressure
The insulating layer of electric oscillation effective coverage etches removal, so that sky of the lower electrode of piezoelectric vibration effective coverage directly with zero acoustic impedance
Gas contact, and the multilayer dielectric layer of high impedance can be effectively prevented resonant acoustic wave energy and be leaked to substrate by electrode.
2, in terms of electrode extraction, electrode groove is etched, makes upper/lower electrode by lying along same level, is used in combination
Plasma etching method forms through-hole, the mode of upper/lower electrode conduction copper column is drawn from the back side, the application of conduction copper column
The electrode for having saved wire bonding needs draws space, and heat dissipation performance is also more preferable, and reliability is higher.
3, it all uses Bragg reflecting layer and passivation layer to cover in device front and conductive groove, not only protects FBAR device
Piezoelectric vibration effective coverage and also avoid wafer bonding technique required for nut cap.The piezoelectric vibration of the FBAR device is effective
Region front is covered by Bragg reflecting layer, and the back side is the air of zero acoustic impedance, can by resonant acoustic wave it is intact be constrained in piezoelectricity
It vibrates in effective coverage, obtains high-performance, the FBAR device of high reliability.
Detailed description of the invention
Fig. 1-Fig. 6 is the processing step diagrammatic cross-section that FBAR device of the present invention implements example 1；
Fig. 7 is that FBAR device of the present invention implements the schematic top plan view after 2 electrode groove of example is formed；
Fig. 8 is that FBAR device of the present invention implements the diagrammatic cross-section after 2 electrode groove of example is formed；
Fig. 9 is that FBAR device of the present invention implements the diagrammatic cross-section after 2 upper electrode of example is formed；
Figure 10 is that FBAR device of the present invention implements the schematic top plan view after 2 upper electrode of example is formed；
Figure 11 is that FBAR device of the present invention implements the diagrammatic cross-section after the covering passivation layer of example 2；
Figure 12 is the diagrammatic cross-section after the completion of FBAR device of the present invention implementation example 2 encapsulates.
Specific embodiment
Below in conjunction with attached drawing of the invention, clear, complete description is carried out to the technical solution of the embodiment of the present invention.
A kind of disclosed thin-film bulk acoustic wave filter and its packaging method, wherein firstly, film bulk acoustic is filtered
Wave device is designed as the back etching FBAR device architecture with multilayer insulation supporting layer, to increase mechanical firmness, while can be every
Conductive electrode and substrate from device improve FBAR device performance.Secondly, the upper/lower electrode of the device, utilizes conductive column
Mode is drawn from the back side, and the electrode that wire bonding needs have been saved in the application of conductive column draws space, and the heat dissipation of conductive column
Performance is more preferable, and reliability is higher.In addition, using Bragg reflecting layer Additional passivation layer in the front of FBAR device and conductive groove
Covering, to protect the piezoelectric vibration effective coverage of FBAR device, avoids wafer bonding technique required for nut cap.
In conjunction with shown in Fig. 6 and Figure 12, a kind of disclosed thin-film bulk acoustic wave filter, comprising: silicon substrate 100,
Multilayer dielectric layer, FBAR device, back chamber 110 and at least two conductive columns 111, wherein the formation of silicon substrate 100 is: providing
The front (i.e. top surface) of silicon wafer bombarded with plasma, rough silicon substrate front 101 is formed, such as Fig. 1
It is shown.The out-of-flatness interlocking tooth face of formation is not necessarily equilateral triangle protrusion shown in silicon substrate front 101, is also possible to oblique three
Angle, the other shapes such as trapezoidal.The ingredient of the plasma of bombardment can be SF6 (sulfur hexafluoride) etc. and the F (fluorine) of pasc reaction changes
Object.Density, pressure, power and the bombardment angle of gas are determined according to process requirements.Form the silicon substrate front 101 of out-of-flatness
Purpose be increase subsequent deposition high resistant insulating layer and silicon substrate contact surface, increase adhesiveness with enhance device machinery jail
Solidity.
Multilayer dielectric layer is deposited on silicon substrate front 101, and in the present embodiment, insulating layer is the insulating layer of high resistant, insulation
The material of layer can be Si3N4(silicon nitride), BCB (benzocyclobutene), AlN (aluminium nitride), polyimides etc..Such as first layer
Deposit Si3N4Material layer, Si as shown in Figure 23N4Layer 103, the second layer deposit bcb layer 104.The resistivity of the two is all up to
The acoustic impedance difference of 1016 Ω cm or more and the two is larger, can increase the reflection efficiency of resonant acoustic wave and as far as possible in this way
Constrain resonant acoustic wave.Preferably, the upper surface of a upper layer insulating is etched into when depositing next layer insulating uneven
Interlocking tooth face, to increase the contact area between each layer insulating.
The number of plies and material of high resistant insulating layer determine that Fig. 2 only illustrates dielectric layers, and height is blocked according to process conditions
The edge layer number of plies is more, more can increase mechanical firmness, and plays the role of that the effective oscillation area of piezoelectricity and silicon substrate is isolated, right
The effect of electric isolution and the energy isolation of resonant acoustic wave is better.And the method for the deposit of insulating layer can be chemical vapor deposition,
Magnetron sputtering deposit etc..
FBAR device is deposited on the insulating layer of top, and when implementation, there are two types of replaceable structures for FBAR device, specifically
Ground, in embodiment 1, FBAR device include lower electrode, piezoelectric material layer 106 and top electrode, wherein lower electrode deposition is in most pushing up
On the insulating layer of layer, and forms lower electrode and draw figure.It needs to etch lower electrode matel material simultaneously and disconnect, reserve one
It is allocated as to be used when top electrode extraction.Sectional view as shown in Figure 3 separates lower electrode etch, form lower electrode body portion 105
With lower electrode lead-out part 107-1 two parts, wherein lower electrode body portion 105 is as lower electrode and under being formed, electrode draws figure,
Lower electrode lead-out part 107-1 is thoroughly disconnected in the upper and lower electrode body portion 105 of electrical property, is given over to and is drawn top electrode use.
Piezoelectric material layer 106 is deposited on lower electrode, needs to carry out piezoelectric material layer when depositing piezoelectric material layer 106
Recess etch etches a groove, such as on the corresponding position for keeping for top electrode part to descend electrode lead-out part 107-1
Shown in Fig. 4.
Top electrode 107 is deposited on piezoelectric material layer 106 again, i.e. top electrode is deposited on piezoelectric material layer 106.It is depositing
Good step coverage is needed when top electrode 107, by the intact covering of recess sidewall, refers to Fig. 4.Top electrode 107 at this time
Lower electrode lead-out part 107-1 is extended to by groove and position that lower 105 level of electrode flushes.
In another alternative embodiment 2, FBAR device still includes lower electrode, piezoelectric material layer 106 and top electrode,
Wherein, the structure of lower electrode and depositing operation are identical with above-described embodiment 1, and details are not described herein again.Unlike, it is depositing
After piezoelectric material layer 106, recess etch is carried out to piezoelectric material layer 106, the groove etched herein is effective around piezoelectric vibration
Region one week, top view as shown in Figure 7.It is overlooked from Silicon Wafer front, it can be seen that positioned at the lower electrode body portion 105 of lower part
With lower electrode lead-out part 107-1, i.e., the lower electrode body portion 105 positioned at lower part that exposes of recess etch in a ring around
Piezoelectric vibration effective coverage.Sectional view please refers to Fig. 8.
Then top electrode 107 is deposited on piezoelectric material layer 106, as shown in figure 9, the layer needs good Step Coverage
Performance covers recess sidewall.Then pattern etching is carried out to top electrode 107, top electrode 107 is divided to for two parts, from Fig. 9
Sectional view can be seen that top electrode 107 and be etched and be divided into top electrode main part 107 and top electrode lead division 105-1 two parts,
The part top electrode lead division 105-1 passes through groove and the connection of lower electrode 105, and top electrode main part 107 is that top electrode passes through groove
Extend downwardly into lower electrode lead-out part 107-1.Top view please refers to shown in Figure 10, deposited one layer in wafer substrate at this time and powers on
Pole main part 107 and top electrode lead division 105-1.
Further, in conjunction with shown in Fig. 5 and Figure 11, in the top electrode for the FBAR device that above two embodiment is introduced
It further successively deposits Bragg reflecting layer 108 and passivation layer 109, two embodiments of this process is identical.Specifically, it forms sediment first
Product Bragg reflecting layer 108, Bragg reflecting layer 108 are alternately stacked by the multilayer material that acoustic resistance differs greatly, it is therefore an objective to
Infinitely great acoustic impedance stack layer is formed, to achieve the purpose that vibrate sound wave total reflection, resonant acoustic wave is applied to beam completely in piezoelectricity
It vibrates in effective district.It is also required for good step coverage when depositing Bragg reflecting layer 108, covers recess sidewall is intact
Lid, can cover live electrode recess sidewall well, by the intact deposited beam of acoustic wave energy in piezoelectric vibration effective district, prevent sound wave
Energy is from sidewall loss.The stacking number of Bragg reflecting layer 108 is determined by process requirements.
Next one or more layers thicker passivation layer 109 is deposited, on Bragg reflecting layer 108 to protect FBAR device just
Face, passivation layer 109 can be SiNx, and in order to reinforce the mechanical firmness of FBAR device, the thickness of passivation layer 109 should suitably add
Thickness is recommended with a thickness of 10 μm -15 μm, and passivation layer 109 is also possible to multilayer passivating material and stacks.Such as by SiNx, BPSG
Thicker passivation layer made of equal materials stack.Chemical vapor deposition for example can be used in deposition process.
It has been deposited on wafer and has obtained FBAR device shown in Fig. 5 or Figure 11 using planarizing process after passivation layer 109
Main structure.
Finally, after carrying out attenuated polishing to the silicon substrate back side, etching back chamber 110 and through-hole, and by upper and lower electrode from through-hole
Extraction forms UBM layer, and plants soldered ball.Due to silicon wafer substrate front deposited multilayer high resistant insulating layer, Bragg reflecting layer and
Thicker passivation layer 109, therefore front can be used to support to carry out attenuated polishing to the back side as mechanical, with reduce device size with
Carry on the back the difficulty of etching technics.Back chamber and through-hole are etched simultaneously with the mode of plasma etching, and the ingredient by changing gas,
It is etched since the silicon substrate back side, then etches multilayer insulation support layer, until the lower electrode of the piezoelectric vibration effective coverage of FBAR
Until, contact lower electrode and the air of zero acoustic impedance directly.As shown in Fig. 6 and Figure 12, the back corresponding position of chamber 110 is piezoelectricity
Vibrate effective coverage.
In conjunction with shown in Fig. 6 and Figure 12, through-hole then forms conductive column 111 using plating, specifically be initially formed top electrode or
The extraction groove (groove formed on i.e. above-mentioned piezoelectric material layer) of lower electrode makes the plane of upper/lower electrode maintain an equal level.Next benefit
With plasma etch process from back-etching through-hole, top electrode and lower electrode are exposed, finally forms conductive column using plating
111 from the back side draw upper/lower electrode, then 111 corresponding position of conductive column make UBM (Under Bump Metallization,
Metallize under salient point) layer, upper/lower electrode is drawn from Silicon Wafer (i.e. silicon substrate) back side.Soldered ball 112 is finally planted on UBM layer,
Complete the encapsulation to FBAR device.
Therefore, the sandwich knot that the present invention passes through the production FBAR device on the multilayer dielectric layer with interlocking tooth contact surface
Structure not only increases the fastness of mechanical support and the effective oscillation area of piezoelectricity and substrate can preferably be isolated.Front and
Depositing Prague stack layer in groove again can preferably constrain in the resonant acoustic wave of FBAR device in piezoelectric vibration effective district,
And wafer bonding technique, avoids high-temperature process needed for avoiding nut cap.The passivation layer of top layer is positive by device
It protects, and the deposit of thicker passivation layer can play the role of physical support for subsequent back etching technics, increase device
The reliability of part.The upper/lower electrode of device all passes through groove and conductive column through-hole and draws from the back side, which can and carry on the back
Chamber carries out simultaneously, simplifies processing step.The electrode that wire bonding needs have been saved in the application of conductive column draws space, thermal diffusivity
Can be also more preferable, reliability is higher.The FBAR device is cut after the completion of wafer-level packaging, forms piezoelectric vibration effective district
Domain is covered by Bragg reflecting layer or the air of zero acoustic impedance surrounds, can by resonant acoustic wave it is intact to be constrained in piezoelectric vibration effective
In region, high-performance, the FBAR device of high reliability are obtained.
Technology contents and technical characteristic of the invention have revealed that as above, however those skilled in the art still may base
Make various replacements and modification without departing substantially from spirit of that invention, therefore, the scope of the present invention in teachings of the present invention and announcement
It should be not limited to the revealed content of embodiment, and should include various without departing substantially from replacement and modification of the invention, and stretched for this patent
Please claim covered.
Claims (10)
1. a kind of thin-film bulk acoustic wave filter characterized by comprising
Silicon substrate comprising opposite front and back,
Multilayer dielectric layer is deposited on the front of the silicon substrate；
FBAR device is deposited on the insulating layer of top, the FBAR device include alienate oneself edge layer top surface from lower past
On the lower electrode, piezoelectric material layer and the top electrode that are sequentially depositing；
Chamber is carried on the back, is formed from the back-etching of silicon substrate to lower electrode, and the corresponding position of the back chamber is that piezoelectric vibration is effective
Region；
At least two conductive columns, the conductive column draw the top electrode and lower electrode from the back side of silicon substrate.
2. thin-film bulk acoustic wave filter according to claim 1, which is characterized in that the front of the silicon substrate, except most pushing up
The upper surface of other every layer insulatings outside layer insulating is respectively formed rough interlocking tooth face.
3. thin-film bulk acoustic wave filter according to claim 1, which is characterized in that
The lower electrode, is deposited on the insulating layer of top, and the lower electrode includes under etching disconnection between the two
Electrode body portion and lower electrode lead-out part；
The piezoelectric material layer is deposited on lower electrode, and the piezoelectric material layer corresponds to the position of the lower electrode lead-out part
One first groove is set；
The top electrode, is deposited on piezoelectric material layer, and the top electrode extends to the lower electrode by the first groove and draws
Portion out, and flushed with the lower electrode lead-out part.
4. thin-film bulk acoustic wave filter according to claim 1, which is characterized in that
The lower electrode, is deposited on the insulating layer of top, and the lower electrode includes under etching disconnection between the two
Electrode body portion and lower electrode lead-out part；
The piezoelectric material layer is deposited on lower electrode, and is etched on the piezoelectric material layer around the piezoelectric vibration and have
Imitate one week the second groove in region；
The top electrode, is deposited on piezoelectric material layer, and the top electrode includes the top electrode main part and upper that etching disconnects
Electrode lead-out part, the top electrode lead division are connect by the second groove with lower electrode body portion, and the top electrode main part is logical
It crosses the second groove and extends to the lower electrode lead-out part, and flushed with the lower electrode lead-out part.
5. thin-film bulk acoustic wave filter according to claim 3 or 4, which is characterized in that the filter further includes deposition
In the Bragg reflecting layer in the top electrode and the passivation layer being deposited on the Bragg reflecting layer；And/or it described powers on
First groove or the second recess sidewall are completely covered when pole, Bragg reflecting layer deposition；And/or the passivation layer
With a thickness of 10 μm -15 μm；And/or it is additionally provided with UBM layer on the conductive column, the top electrode and lower electrode are drawn, and institute
It states and is implanted with soldered ball on UBM layer.
6. a kind of packaging method of thin-film bulk acoustic wave filter characterized by comprising
S1 deposits multilayer dielectric layer on the front of silicon substrate；
S2, on the insulating layer of top deposit FBAR device, the FBAR device include alienate oneself edge layer top surface under
Lower electrode, piezoelectric material layer and the top electrode being up sequentially depositing；
S3, etching back chamber and through-hole after the back side of silicon substrate carries out attenuated polishing, the back chamber and through-hole are from silicon substrate
Back-etching to lower electrode is formed, and plating forms conductive column in through-hole, then makes UBM layer on the conductive column, by it is upper,
Lower electrode is drawn by the conductive column from the back side of silicon substrate.
S4 finally plants soldered ball on the UBM layer, completes the encapsulation of FBAR device.
7. packaging method according to claim 6, which is characterized in that in S1, before depositing insulating layer, just by silicon substrate
Face, and, it when depositing next layer insulating by the upper surface of a upper layer insulating, is bombarded, is etched with plasma
Form rough interlocking tooth face.
8. packaging method according to claim 6, which is characterized in that the S2 includes:
S21, electrode under being deposited on the insulating layer of top, and form lower electrode pattern, while by the lower electrode
Etching disconnects, and forms lower electrode body portion and lower electrode lead-out part；
S22, the depositing piezoelectric material layer on the lower electrode correspond to the lower electrode lead-out part on the piezoelectric material layer
First groove at the etching of position；
S23, deposits top electrode on the piezoelectric material layer, and the top electrode extends to the lower electrode by the first groove and draws
Portion out, and flushed with the lower electrode lead-out part.
9. a kind of packaging method of thin-film bulk acoustic wave filter according to claim 6, which is characterized in that the S2 packet
It includes:
S21, electrode under being deposited on the insulating layer of top, and form lower electrode pattern, while by the lower electrode
Etching disconnects, and forms lower electrode body portion and lower electrode lead-out part；
S22, the depositing piezoelectric material layer on the lower electrode are etched on the piezoelectric material layer around the piezoelectric vibration
One week the second groove in effective coverage；
S23 deposits top electrode on the piezoelectric material layer, and carries out pattern etching to the top electrode, by the top electrode
Etching is divided into the top electrode main part and top electrode lead division of disconnection, and the top electrode lead division passes through the second groove and lower electrode
Main part connection, the top electrode main part extend to the lower electrode lead-out part by the second groove, and with the lower electrode
Lead division flushes.
10. packaging method according to claim 6, which is characterized in that after the S3 further include: in the top electrode according to
Secondary deposition Bragg reflecting layer and passivation layer.
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