CN109609920B - Anti-blocking screen printing plate and preparation method thereof - Google Patents
Anti-blocking screen printing plate and preparation method thereof Download PDFInfo
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- CN109609920B CN109609920B CN201910019886.7A CN201910019886A CN109609920B CN 109609920 B CN109609920 B CN 109609920B CN 201910019886 A CN201910019886 A CN 201910019886A CN 109609920 B CN109609920 B CN 109609920B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- Engineering & Computer Science (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses an anti-blocking screen printing screen and a preparation method thereof, wherein the screen printing screen comprises a substrate, a composite film layer is arranged on the surface of the substrate, the composite film layer sequentially comprises an inner layer, an intermediate layer and an outer layer from inside to outside, the inner layer is a titanium aluminum layer, the intermediate layer is a titanium aluminum + diamond-like carbon layer, and the outer layer is a silver-doped diamond-like carbon layer. The screen printing plate has good self-cleaning anti-blocking performance, and the bonding strength between the membrane layers is high.
Description
Technical Field
The invention relates to the field of printing screens, in particular to an anti-blocking screen printing screen and a preparation method thereof.
Background
The silk-screen printing technology is used as a cheap film coating mode, is widely applied to various fields of manufacturing industry at present, and can not be separated from the development of semiconductor devices, the printing of double-sided grid lines of photovoltaic cells and the printing of common plane patterns. The conductive silver paste generally comprises silver powder, screen powder and organic components. Since silver powder is easily agglomerated, the screen is clogged due to coagulation and drying of the printing paste on the screen during printing. In order to overcome the problem of screen blocking which always troubles the screen printing process of the printing coating, manufacturers and users of the printing coating adopt a plurality of methods, including improving the production formula and the process of the printing coating, introducing an auxiliary agent with the function of screen blocking resistance into the printing coating, and the like. In actual use, some screen blocking prevention agents also cause the defects of back adhesion of printing coatings, easy skinning and the like, and seriously affect the quality and efficiency of the coating screen printing. Therefore, it is necessary to develop a screen plug capable of solving the above-mentioned screen printing problem. How to reduce the screen plugging of screen printing firstly so that the screen can be automatically cleaned and the plugging can be removed is more important, and the screen plugging device has more practical application significance especially for the characteristics of screen printing quality and efficiency.
Disclosure of Invention
The invention aims to provide an anti-blocking screen printing plate with high membrane layer combination degree and capability of effectively improving screen printing efficiency and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides an anti screen printing half tone that stops up, includes the base member, is equipped with compound rete on the surface of base member, and compound rete is by interior outer inlayer, intermediate level and the skin of including according to the preface, the inlayer is the titanium aluminium layer, and the intermediate level is titanium aluminium + diamond-like carbon layer, and the skin is silver-doped diamond-like carbon layer.
The thickness of the titanium aluminum layer is 30-50 mu m.
The thickness of the titanium aluminum + diamond-like carbon layer is 30-50 μm.
The thickness of the silver-doped diamond-like carbon layer is 50-100 mu m.
The thickness of the substrate is 10-20 mm.
The preparation method comprises the following steps:
1) cleaning the substrate by using a cleaning machine;
2) inner layer: sending the substrate into a film coating chamber, carrying out radio frequency magnetron sputtering on the titanium-aluminum layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias voltage is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of a titanium target and an aluminum target is 4-6A, the flow of CH4 is 10-25sccm, the flow of argon is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-200W, and the distance between the titanium target, the aluminum target and the substrate is 30-60 mm;
3) intermediate layer 1 layer: continuing radio frequency magnetron sputtering 70wt% titanium aluminum +30wt% diamond-like carbon layer, the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of the titanium target and the aluminum target is 4-6A, the current of the carbon target is 2-4A, the flow of CH4 is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-200W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 30-60 mm;
4) intermediate layer 2: continuing to perform radio frequency magnetron sputtering on 30wt% titanium aluminum +70wt% diamond-like carbon layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of the titanium target and the aluminum target is 2-4A, the current of the carbon target is 4-6A, the flow of CH4 is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-200W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 30-60 mm;
5) outer layer: continuing to perform radio frequency magnetron sputtering of the silver-doped diamond-like carbon layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working pressure is 0.2-1Pa, the rotating speed of the substrate is 4-8rpm, the carbon target current is 4-6A, the silver target current is 1-2A, the CH4 flow is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-200 carbon targets, and the distance between the silver target and the substrate is 30-60 mm.
By adopting the technical scheme, the invention has the following beneficial effects:
1. the inner layer and the middle layer have the same titanium-aluminum components for transition, and the titanium-aluminum layer can relieve stress concentration and effectively improve the adhesion performance and the thermal stability of the surface of the screen printing plate;
2. the same diamond-like carbon components in the intermediate layer and the outer layer are transited, so that the bonding strength between adjacent film layers can be effectively improved; the diamond-like carbon layer has high hydrophobic property, low surface energy and ideal waterproof and anti-adhesion properties, realizes the self-cleaning property of the screen printing plate, prevents the problems of coating sticking to the screen and blocking the meshes, and thus effectively improves the screen printing efficiency. In addition, the diamond-like film layer can improve the hardness, the wear resistance and the chemical inertness of the surface of the screen printing plate, thereby prolonging the service life of the screen printing plate.
3. The mechanical property of the silver-doped diamond-like carbon film in the outer layer is effectively improved, and more importantly, the viscoplasticity is greatly improved. The improvement of viscoplasticity enables the hydrogen bond on the surface of the DLC to have the characteristic of flexibility, thereby reducing friction and being beneficial to achieving a super-lubrication state.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a composite schematic of the present invention.
Detailed Description
As shown in fig. 1, the anti-blocking screen printing plate comprises a substrate 1, wherein a composite film layer is arranged on the surface of the substrate 1, the composite film layer sequentially comprises an inner layer 2, an intermediate layer 3 and an outer layer 4 from inside to outside, the inner layer 2 is a titanium aluminum layer, the intermediate layer 3 is a titanium aluminum + diamond-like carbon layer, and the outer layer 4 is a silver-doped diamond-like carbon layer.
Wherein, the thickness of the substrate is 10-20mm, the thickness of the titanium aluminum layer is 30-50 μm, the thickness of the titanium aluminum + diamond-like carbon layer is 30-50 μm, and the thickness of the silver doped diamond-like carbon layer is 50-100 μm.
In embodiment 1, the method for preparing a screen printing plate of the present invention includes the following steps:
1) cleaning the substrate by using a cleaning machine;
2) inner layer: sending the substrate into a film coating chamber, carrying out radio frequency magnetron sputtering on the titanium-aluminum layer, wherein the temperature of the substrate is 25 ℃, the negative bias voltage is 100V, the working pressure is 0.2Pa, the rotating speed of the substrate is 2rpm, the current of a titanium target and an aluminum target is 4A, the flow of CH4 is 10sccm, the flow of argon is 50sccm, the sputtering time is 30min, the radio frequency power is 100W, the distance between the titanium target and the substrate is 30 mm;
3) intermediate layer 1 layer: continuing radio frequency magnetron sputtering of 70wt% titanium aluminum and 30wt% diamond-like carbon layer, wherein the temperature of the substrate is 25 ℃, the negative bias is 100V, the working pressure is 0.2Pa, the rotating speed of the substrate is 2rpm, the current of the titanium target and the aluminum target is 4A, the current of the carbon target is 2A, the flow of CH4 is 10sccm, the flow of argon is 50sccm, the sputtering time is 30min, the radio frequency power is 100W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 30 mm;
4) intermediate layer 2: continuing radio frequency magnetron sputtering of 30wt% titanium aluminum and 70wt% diamond-like carbon layer, wherein the temperature of the substrate is 25 ℃, the negative bias is 100V, the working pressure is 0.2Pa, the rotating speed of the substrate is 2rpm, the current of the titanium target and the aluminum target is 2A, the current of the carbon target is 4A, the flow of CH4 is 10sccm, the flow of argon is 50sccm, the sputtering time is 30min, the radio frequency power is 100W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 30 mm;
5) outer layer: and continuing the radio frequency magnetron sputtering of the silver-doped diamond-like carbon layer, wherein the temperature of the substrate is 25 ℃, the negative bias is 100V, the working pressure is 0.2Pa, the rotating speed of the substrate is 4rpm, the carbon target current is 4A, the silver target current is 1A, the CH4 flow is 10sccm, the argon flow is 50sccm, the sputtering time is 30min, the radio frequency power is 100 carbon targets, and the distance between the silver target and the substrate is 30 mm.
1) cleaning the substrate by using a cleaning machine;
2) inner layer: sending the substrate into a film coating chamber, carrying out radio frequency magnetron sputtering on the titanium-aluminum layer, wherein the temperature of the substrate is 45 ℃, the negative bias voltage is 130V, the working pressure is 0.6Pa, the rotating speed of the substrate is 6rpm, the current of a titanium target and an aluminum target is 5A, the flow of CH4 is 17sccm, the flow of argon is 75sccm, the sputtering time is 60min, the radio frequency power is 150W, the distance between the titanium target and the substrate is 45 mm;
3) intermediate layer 1 layer: continuing radio frequency magnetron sputtering of 70wt% titanium aluminum and 30wt% diamond-like carbon layer, wherein the temperature of the substrate is 45 ℃, the negative bias voltage is 130V, the working pressure is 0.6Pa, the rotating speed of the substrate is 6rpm, the current of the titanium target and the aluminum target is 5A, the current of the carbon target is 3A, the flow of CH4 is 17sccm, the flow of argon is 75sccm, the sputtering time is 60min, the radio frequency power is 150W, the distance between the titanium target and the substrate is 45 mm;
4) intermediate layer 2: continuing radio frequency magnetron sputtering of 30wt% titanium aluminum and 70wt% diamond-like carbon layer, wherein the temperature of the substrate is 45 ℃, the negative bias voltage is 130V, the working pressure is 0.6Pa, the rotating speed of the substrate is 6rpm, the current of the titanium target and the aluminum target is 3A, the current of the carbon target is 5A, the flow of CH4 is 17sccm, the flow of argon is 75sccm, the sputtering time is 60min, the radio frequency power is 150W, the distance between the titanium target and the substrate is 45 mm;
5) outer layer: and continuing the radio frequency magnetron sputtering of the silver-doped diamond-like carbon layer, wherein the temperature of the substrate is 45 ℃, the negative bias voltage is 130V, the working pressure is 0.6Pa, the rotating speed of the substrate is 6rpm, the carbon target current is 5A, the silver target current is 1.5A, the CH4 flow is 17sccm, the argon flow is 75sccm, the sputtering time is 60min, the radio frequency power is 150W, the titanium target is titanium, and the distance between the aluminum target and the substrate is 45 mm.
1) cleaning the substrate by using a cleaning machine;
2) inner layer: sending the substrate into a film coating chamber, carrying out radio frequency magnetron sputtering on a titanium-aluminum layer, wherein the temperature of the substrate is 60 ℃, the negative bias is 150V, the working pressure is 1Pa, the rotating speed of the substrate is 8rpm, the current of a titanium target and an aluminum target is 6A, the flow of CH4 is 25sccm, the flow of argon is 100sccm, the sputtering time is 90min, the radio frequency power is 200W, and the distance between the titanium target and the substrate is 60 mm;
3) intermediate layer 1 layer: continuing radio frequency magnetron sputtering of 70wt% titanium aluminum and 30wt% diamond-like carbon layer, wherein the temperature of the substrate is 60 ℃, the negative bias is 150V, the working pressure is 1Pa, the rotating speed of the substrate is 8rpm, the current of the titanium target and the aluminum target is 6A, the current of the carbon target is 4A, the flow of CH4 is 25sccm, the argon flow is 100sccm, the sputtering time is 90min, the radio frequency power is 200W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 60 mm;
4) intermediate layer 2: continuing radio frequency magnetron sputtering of 30wt% titanium aluminum and 70wt% diamond-like carbon layer, wherein the temperature of the substrate is 60 ℃, the negative bias is 150V, the working pressure is 1Pa, the rotating speed of the substrate is 8rpm, the current of the titanium target and the aluminum target is 4A, the current of the carbon target is 6A, the flow of CH4 is 25sccm, the argon flow is 100sccm, the sputtering time is 90min, the radio frequency power is 200W, and the distance between the titanium target, the aluminum target, the carbon target and the substrate is 60 mm;
5) outer layer: and continuing the radio frequency magnetron sputtering of the silver-doped diamond-like carbon layer, wherein the temperature of the substrate is 60 ℃, the negative bias is 150V, the working pressure is 1Pa, the rotating speed of the substrate is 8rpm, the carbon target current is 6A, the silver target current is 2A, the CH4 flow is 25sccm, the argon flow is 100sccm, the sputtering time is 90min, the radio frequency power is 200, and the distance between the carbon target and the substrate is 60 mm.
In order to verify the performance of the composite film layer in each embodiment of the invention, the composite film layer prepared by the preparation method is compared with the existing traditional diamond-like carbon film, and the process, micro-hardness, wear resistance, microstructure and wear morphology detection, film layer contact angle detection and adhesion test results are as follows:
Claims (3)
1. the utility model provides an anti screen printing half tone that blocks up, includes the base member, is equipped with compound rete on the surface of base member, and compound rete includes inlayer, intermediate level and skin, its characterized in that by interior outer according to the preface: the inner layer is a titanium aluminum layer, the middle layer is a titanium aluminum and diamond-like carbon layer, the outer layer is a silver-doped diamond-like carbon layer, the thickness of the titanium aluminum layer is 30-50 mu m, the thickness of the titanium aluminum and diamond-like carbon layer is 30-50 mu m, and the thickness of the silver-doped diamond-like carbon layer is 50-100 mu m.
2. The screen printing plate of claim 1, wherein the screen printing plate comprises: the thickness of the substrate is 10-20 mm.
3. The method for producing a screen printing plate according to claim 1, characterized in that: the preparation method comprises the following steps:
1) cleaning the substrate by using a cleaning machine;
2) inner layer: sending the substrate into a coating chamber, performing radio frequency magnetron sputtering on the titanium-aluminum layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of the titanium target and the aluminum target is 4-6A, and CH4The flow rate is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-;
3) intermediate layer 1 layer: continuing to perform radio frequency magnetron sputtering on 70wt% titanium aluminum and 30wt% diamond-like carbon layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of the titanium target and the aluminum target is 4-6A, the current of the carbon target is 2-4A, and CH4The flow rate is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-;
4) intermediate layer 2: continuing to perform radio frequency magnetron sputtering on 30wt% titanium aluminum and 70wt% diamond-like carbon layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 2-8rpm, the current of the titanium target and the aluminum target is 2-4A, the current of the carbon target is 4-6A, and CH4The flow rate is 10-25sccm, the argon flow is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-;
5) outer layer: continuing to perform radio frequency magnetron sputtering of the silver-doped diamond-like carbon layer, wherein the temperature of the substrate is 25-60 ℃, the negative bias voltage is 100-150V, the working air pressure is 0.2-1Pa, the rotating speed of the substrate is 4-8rpm, the carbon target current is 4-6A, the silver target current is 1-2A, and CH4The flow rate is 10-25sccm, the argon flow rate is 50-100sccm, the sputtering time is 30-90min, the radio frequency power is 100-.
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| EP1287953A1 (en) * | 2000-06-05 | 2003-03-05 | KAI R&D CENTER CO., LTD. | Cutting blade and method of producing the same |
| CN102041473A (en) * | 2009-10-22 | 2011-05-04 | 光田好孝 | Diamond-like carbon film-formed material and method for producing the same |
| CN102965619A (en) * | 2012-12-07 | 2013-03-13 | 中国地质大学（北京） | Preparation method of multi-metal doping hydrogen-free diamond carbon film |
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| CN102101638A (en) * | 2009-12-18 | 2011-06-22 | 中国科学院兰州化学物理研究所 | Preparation method of nano composite film |
| CN104947037B (en) * | 2015-05-30 | 2018-07-06 | 中国科学院宁波材料技术与工程研究所 | A kind of doped diamond film and preparation method thereof |
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|---|---|---|---|---|
| EP1287953A1 (en) * | 2000-06-05 | 2003-03-05 | KAI R&D CENTER CO., LTD. | Cutting blade and method of producing the same |
| CN102041473A (en) * | 2009-10-22 | 2011-05-04 | 光田好孝 | Diamond-like carbon film-formed material and method for producing the same |
| CN102965619A (en) * | 2012-12-07 | 2013-03-13 | 中国地质大学（北京） | Preparation method of multi-metal doping hydrogen-free diamond carbon film |
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