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CN109442229B - Semiconductor lighting device with L ED lamp string - Google Patents

Semiconductor lighting device with L ED lamp string Download PDF

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Publication number
CN109442229B
CN109442229B CN201811005807.9A CN201811005807A CN109442229B CN 109442229 B CN109442229 B CN 109442229B CN 201811005807 A CN201811005807 A CN 201811005807A CN 109442229 B CN109442229 B CN 109442229B
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China
Prior art keywords
fluorescent lamp
package
fluorescent
glass
conductive
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Application number
CN201811005807.9A
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CN109442229A (en
Inventor
不公告发明人
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Shandong Weixinze Photoelectric Technology Co ltd
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Yueqing Zhige Electronic Technology Co ltd
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Priority to CN201811005807.9A priority Critical patent/CN109442229B/en
Publication of CN109442229A publication Critical patent/CN109442229A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)

Abstract

The invention relates to a semiconductor lighting device with L ED lamp string, which comprises a first glass baffle plate and a second glass baffle plate, wherein the surface of the first glass baffle plate is provided with two conductive convex columns, the second glass baffle plate is provided with a deep groove protruding outwards, the deep groove is filled with half of transparent conductive material to form a conductive part and a non-conductive part, the conductive parts of the conductive convex columns and the deep groove are electrically connected onto a horizontal conductive plate, terminals are led out through two connecting plates below the horizontal plate, the outer sides of the two connecting plates are provided with elastic devices, and a L ED lamp string structure is arranged between the first baffle plate and the second baffle plate.

Description

Semiconductor lighting device with L ED lamp string
Technical Field
The invention relates to the field of solid-state lighting materials, in particular to a semiconductor lighting device with an L ED lamp string.
Background
L ED is a solid semiconductor device, which can directly convert electric energy into light energy, compared with traditional incandescent lamp and fluorescent lamp, L ED has advantages of low power consumption, high luminous efficiency, long service life, energy saving and environmental protection, so it can be widely used in daily illumination field, and can enter into display device field.
The conventional semiconductor lighting device mainly uses a cob (chip on board) packaging structure, wherein a plurality of L ED chips are fixed on a substrate, connected in series and parallel by wire bonding, and then integrally sealed by resin.
Disclosure of Invention
In order to solve the above-mentioned problems in the packaging, the present invention provides a semiconductor lighting device with L ED light string, which comprises a first glass baffle plate and a second glass baffle plate, wherein the surface of the first glass baffle plate is provided with two conductive posts, the second glass baffle plate is provided with a deep groove protruding outwards, the deep groove is filled with a half of transparent conductive material to form a conductive part and a non-conductive part, the first and second glass baffle plates are respectively and vertically fixed on two horizontal conductive plates, the conductive posts and the deep groove conductive part are electrically connected to the horizontal conductive plates, and terminals are led out through two connecting plates below the horizontal conductive plates, and the outer sides of the two connecting plates are provided with elastic devices for adjusting the distance between the first and second glass baffle plates, and a L ED light string structure is arranged between the first and second glass baffle plates.
Wherein, the L ED lamp cluster structure includes a plurality of L ED packings, the L ED packings include:
a fluorescent glass plate;
first and second L ED chips mounted on opposite sides of the fluorescent glass plate, the first L ED chip having first and second electrodes, the second L ED chip having third and fourth electrodes;
the fluorescent glue coats the first L ED chip, the second L ED chip and the fluorescent glass plate, and the coating shape of the fluorescent glue is cuboid or cube;
connection holes on the first, second, third and fourth electrodes and exposing the first, second, third and fourth electrodes;
shallow trenches positioned on the facing surfaces of the first L ED chip and the second L ED chip are respectively communicated with the connecting holes;
a deep trench located outside the first side of the first and second L ED chips, the deep trench being in communication with the shallow trench, and the shallow trench and the deep trench being formed on the surface of the fluorescent glue;
and a transparent conductive material including a first portion filling the connection hole and the shallow trench, a second portion partially filling the deep trench, and a third portion protruding on a second side opposite to the deep trench, having a first conductive path including the second portion and the first portion to connect the first and third electrodes, and a second conductive path including the third portion and the first portion to connect the second and fourth electrodes;
the third portion protruding matches the shape of the recessed portion of the deep trench not filled with the transparent conductive material.
In the present invention, the first conductive path is in a C-shape, and the second path is in an inverted C-shape.
In the invention, the transparent conductive material is an oxide or transparent metal material such as indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide and the like.
In the invention, the fluorescent glue contains fluorescent powder or fluorescent crystal.
In the present invention, the package body applies a voltage through the second and third portions of transparent conductive material to connect the first and second L ED chips in parallel.
In the present invention, the elastic means is an insulating means, and may be, for example, rubber or the like.
In the present invention, the elastic means are respectively pressed inward by the two clamping plates.
The invention can realize the serial-parallel connection of a plurality of L ED chips, is easy to replace and has simple method.
Drawings
FIG. 1 is a cross-sectional view of an L ED package structure of the present invention;
FIG. 2 is a three-dimensional view of an L ED package structure of the present invention;
FIG. 3 is a top view of an L ED package structure of the present invention;
FIG. 4 is a right side view of an L ED package structure of the present invention;
FIG. 5 is a schematic diagram of an L ED light string configuration according to the present invention;
fig. 6 is a structural view of a support body of the semiconductor lighting device of the present invention.
Detailed Description
Referring to fig. 1-4, the L ED package structure of the present invention is a 360-degree light emitting structure, the fluorescent glass plate 1 is a rigid transparent substrate and contains corresponding fluorescent particles, two L ED chips 2 are respectively located on the upper side and the lower side of the fluorescent glass plate 1, the two chips are respectively provided with two extraction electrodes 9, the two L ED chips 2 and the fluorescent glass plate 1 are covered by fluorescent glue 3 and are formed into a square or rectangular parallelepiped shape by cutting and polishing, four connection holes 4 are provided at corresponding positions of the four electrodes 9, the four connection holes 4 are filled with transparent conductive material, four shallow trenches 5 are provided on the fluorescent glue surface facing the two L ED chips 2, the shallow trenches 5 are also filled with transparent conductive material and are electrically connected to the connection holes 4, a deep trench 8 is provided outside the first side surfaces of the two L ED chips 2, the deep trench 8 is communicated with the shallow trenches 5, and the shallow trenches 8 and 5 are formed on the surface of the fluorescent glue 3.
The transparent conductive material is an oxide such as indium tin oxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, or a transparent metal material, and includes a first portion filling the connection hole 4 and the shallow trench 5, a second portion 7 partially filling the deep trench 8, and a third portion 6 protruding on a second side opposite to the deep trench 8, and having a first conductive path including the second portion 7 and the first portion to connect the left electrode of the upper chip and the left electrode of the lower chip, and a second conductive path including the third portion and the first portion to connect the right electrode of the upper chip and the right electrode of the lower chip; and, the said third part 6 that is projected matches the concave part shape of the deep groove 8 not filled with transparent conductive material, preferably, the depth of the deep groove 8 is twice the height of the said third part 6, and the depth of the concave part of the deep groove 8 not filled with transparent conductive material is equal to the height of the third part, so when forming the light string, the two can be embedded each other, achieve the goal of electrical interconnection.
The first conducting path is of a C shape, the second path is of an inverted C shape, the fluorescent glue comprises fluorescent powder or fluorescent crystals, and the packaging body applies voltage through the second part and the third part of the transparent conducting material so that the first L ED chip and the second L ED chip are connected in parallel.
Fig. 5 shows an L ED light string structure according to the present invention, which includes a plurality of L ED package structures as described above, a plurality of L ED package structures are embedded into the recessed portion of the deep trench not filled with transparent conductive material by the protruding third portion of the previous L ED package structure, so as to form a light string connected in parallel and then connected in series, a transparent silicone may be disposed between any two L ED package structures to serve as an adhesive layer, and the number of the light strings may be 1 × 2, or 2 × 2, or even more.
FIG. 6 is a structural diagram of the semiconductor lighting device of the present invention, wherein the surface of the glass baffle plate 10 of the left half is provided with two conductive studs 18 corresponding to the concave portions of the deep grooves on the left side in FIG. 5 and electrically connected with the transparent conductive material in the deep grooves, the glass baffle plate 10 of the right half has deep grooves protruding outward, the deep grooves are filled with half of the transparent conductive material to form conductive portions 15 and non-conductive portions 16, the conductive materials are the same as those in FIG. 5, the glass baffle plate 10 is fixed on the horizontal conductive plate 11, the horizontal conductive plate is a conductive material, the conductive studs 18 and the conductive portions 15 of the deep grooves are electrically connected to the horizontal conductive plate 11 and lead out terminals through the connection plates 12 below the horizontal conductive plate, and there are elastic means 13 outside the two connection plates, the elastic means 13 is an insulating means such as rubber or the like, the elastic means gives inward pressure respectively through the two clamping plates 14, the lighting device can be adjusted to set the appropriate distance between the two glass baffle plates 10 to achieve the purpose of placing strings of L ED chips in different numbers.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (1)

1. A semiconductor lighting device with L ED lamp string is composed of the first glass baffle with two vertical conducting posts on its surface, the second glass baffle with a convex deep slot, the transparent conducting material filled in said deep slot to form conducting part and non-conducting part, the first and the second glass baffles fixed to two horizontal conducting plates, the conducting part of said posts and deep slots connected to said horizontal conducting plates, and the terminals led out via two connecting plates under said horizontal conducting plates, and the elastic unit at the external side of two connecting plates for regulating the distance between the first and the second glass baffles, the first and the second glass baffles for setting up L lamp string ED structure, the L0 ED structure including multiple L1 LED packages, the L package including fluorescent glass plate, the first and the second chips fixed to the fluorescent glass plate, the first and the second chips L having the first and the second LED chips, the second LED package including the fluorescent glass plate, the fluorescent lamp string package including the fluorescent lamp wire, the fluorescent lamp string LED package including the fluorescent lamp, the fluorescent lamp string, the fluorescent lamp package including the fluorescent lamp, the fluorescent lamp package, and the fluorescent lamp package including the fluorescent lamp package, wherein the fluorescent lamp package includes the fluorescent lamp package, and the fluorescent lamp package, the fluorescent lamp package.
CN201811005807.9A 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string Active CN109442229B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811005807.9A CN109442229B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610560250.XA CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device
CN201811005807.9A CN109442229B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201610560250.XA Division CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device

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CN109442229A CN109442229A (en) 2019-03-08
CN109442229B true CN109442229B (en) 2020-07-14

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CN201811005807.9A Active CN109442229B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with L ED lamp string
CN201811006558.5A Active CN109473423B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with LED lamp string
CN201610560250.XA Active CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device
CN201811006532.0A Withdrawn CN109524391A (en) 2016-07-17 2016-07-17 Semiconductor illumination device

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CN201811006558.5A Active CN109473423B (en) 2016-07-17 2016-07-17 Semiconductor lighting device with LED lamp string
CN201610560250.XA Active CN106024769B (en) 2016-07-17 2016-07-17 A kind of semiconductor illumination device
CN201811006532.0A Withdrawn CN109524391A (en) 2016-07-17 2016-07-17 Semiconductor illumination device

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006331856A (en) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd Lighting device
EP2287524A1 (en) * 2009-08-20 2011-02-23 Graviton Lite Limited Lighting apparatus and a method of fabrication
CN201983025U (en) * 2011-01-21 2011-09-21 陈上贵 LED lamp and lamp body connecting structure thereof
WO2011118934A2 (en) * 2010-03-23 2011-09-29 Kang Kim Light emitting diode device and lighting device using the same
CN102679233A (en) * 2012-06-11 2012-09-19 海安县威仕重型机械有限公司 LED (light-emitting diode) desk lamp with adjustable light source position
CN103730454A (en) * 2013-12-13 2014-04-16 青岛威力电子科技有限公司 LED with functions of adjusting color temperature and improving color rendering
CN103915428A (en) * 2014-01-14 2014-07-09 四川品龙光电科技有限公司 LED light-emitting device and packaging method
CN104638091A (en) * 2014-12-18 2015-05-20 上海大学 LED (light emitting diode) glass base plate
CN105280627A (en) * 2014-07-08 2016-01-27 简汝伊 Light source module and packaging method thereof, and lighting device using the light source module

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130239B (en) * 2011-01-31 2012-11-07 郑榕彬 Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part
TWI626395B (en) * 2013-06-11 2018-06-11 晶元光電股份有限公司 Light emitting device
CN204118115U (en) * 2014-07-29 2015-01-21 中国科学院苏州纳米技术与纳米仿生研究所 Novel transparent substrate LED encapsulation structure
CN105336734A (en) * 2015-10-19 2016-02-17 漳州立达信光电子科技有限公司 LED vertical packaging structure

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006331856A (en) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd Lighting device
EP2287524A1 (en) * 2009-08-20 2011-02-23 Graviton Lite Limited Lighting apparatus and a method of fabrication
WO2011118934A2 (en) * 2010-03-23 2011-09-29 Kang Kim Light emitting diode device and lighting device using the same
CN201983025U (en) * 2011-01-21 2011-09-21 陈上贵 LED lamp and lamp body connecting structure thereof
CN102679233A (en) * 2012-06-11 2012-09-19 海安县威仕重型机械有限公司 LED (light-emitting diode) desk lamp with adjustable light source position
CN103730454A (en) * 2013-12-13 2014-04-16 青岛威力电子科技有限公司 LED with functions of adjusting color temperature and improving color rendering
CN103915428A (en) * 2014-01-14 2014-07-09 四川品龙光电科技有限公司 LED light-emitting device and packaging method
CN105280627A (en) * 2014-07-08 2016-01-27 简汝伊 Light source module and packaging method thereof, and lighting device using the light source module
CN104638091A (en) * 2014-12-18 2015-05-20 上海大学 LED (light emitting diode) glass base plate

Also Published As

Publication number Publication date
CN109473423B (en) 2020-03-27
CN109442229A (en) 2019-03-08
CN109473423A (en) 2019-03-15
CN106024769A (en) 2016-10-12
CN106024769B (en) 2018-10-02
CN109524391A (en) 2019-03-26

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