CN109449224A - A kind of silicon based opto-electronics material and preparation method thereof - Google Patents
A kind of silicon based opto-electronics material and preparation method thereof Download PDFInfo
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- CN109449224A CN109449224A CN201811054222.6A CN201811054222A CN109449224A CN 109449224 A CN109449224 A CN 109449224A CN 201811054222 A CN201811054222 A CN 201811054222A CN 109449224 A CN109449224 A CN 109449224A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 title claims abstract description 44
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 38
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002245 particle Substances 0.000 claims abstract description 14
- 210000000498 stratum granulosum Anatomy 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000010792 warming Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 62
- 230000008021 deposition Effects 0.000 abstract description 8
- 230000005284 excitation Effects 0.000 abstract description 6
- 238000005424 photoluminescence Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 9
- 238000002207 thermal evaporation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- IDLFZVILOHSSID-OVLDLUHVSA-N corticotropin Chemical compound C([C@@H](C(=O)N[C@@H](CO)C(=O)N[C@@H](CCSC)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](CC=1C=CC(O)=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(N)=O)C(=O)NCC(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(O)=O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CO)C(=O)N[C@@H](C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC=1C=CC=CC=1)C(O)=O)NC(=O)[C@@H](N)CO)C1=CC=C(O)C=C1 IDLFZVILOHSSID-OVLDLUHVSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
Classifications
-
- H01L31/032—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H01L31/0321—
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention is suitable for field of photoelectric technology, provides a kind of silicon based opto-electronics material characterized by comprising monocrystalline silicon piece；The Er doping CeO being attached on the monocrystalline silicon piece2Film；And it is attached to the Er doping CeO2The Ag stratum granulosum of film surface.Silicon based opto-electronics material provided in an embodiment of the present invention, the silicon substrate Er relative to no deposition Ag particle adulterate CeO2Thin-film material, excitation peak move to left, and photoluminescence intensity is significantly improved, especially Er3+~the luminous peak intensity of 1540nm wavelength dramatically increases, luminous efficiency significantly improves, and luminescent properties are greatly improved, and is more applicable for industry application.
Description
Technical field
The invention belongs to field of photoelectric technology more particularly to a kind of silicon based opto-electronics material and preparation method thereof.
Background technique
The sub- material of silicon based opto-electronics is due to extensive in recent years with the compatible and excellent performance of existing integrated circuit technology
Concern and research realize that one of the key of silicon based opto-electronics interconnection is exactly that effective light emitting is realized in silicon substrate.But it is traditional
For the basic material silicon of microelectronics industry as a kind of indirect bandgap material, luminous efficiency is very low, cannot achieve effectively
Light emitting, for this purpose, there has been proposed the thinkings for integrating effective luminescent layer on a silicon substrate.
Because of Ce4+Ionic radius and trivalent rare earth ions radius are close, are expected to be dissolved more dilute main ions and become hair
Light center, and have strong absorption near ultraviolet band, while its phonon cutoff frequency is low, optical transparence is good, refractive index is high, these
All be conducive to them as a kind of luminous host material and obtain efficient rare earth luminescence.Importantly, they
Dielectric constant, with the Optimality of the matching of the energy band of silicon and band edge biasing, etc. compatible with the thermodynamic stability of silicon and interface
Matter is advantageously implemented integrated with the photoelectricity of silicon.Rare earth Er ion have special electron structure, shine have bands of a spectrum it is narrow,
Excitation purity is high, Wavelength distribution region is wide, small, matrix is quenched in temperature and external environment influences the advantages that minimum, physical and chemical performance is stablized,
And it 1540nm luminous with optical communication wave band thus is extensively studied as following luminescent material.Currently, CeO2
Have been demonstrated that in photic and electroluminescent be Er3+The suitable aggregate material of ion, so integrating Er doping on silicon substrate
CeO2Luminescent layer is a kind of promising approach.Currently, Er adulterates CeO2Luminescence generated by light be reported.
However, Er adulterates CeO2Luminous efficiency it is still very low, luminescent properties from industry apply there are also with a certain distance from, because
This, providing the sub- material of silicon based opto-electronics that a kind of luminous efficiency is high, applies suitable for industry becomes urgent problem to be solved.
Summary of the invention
The embodiment of the present invention provides a kind of silicon based opto-electronics material, it is desirable to provide a kind of luminous efficiency is high, is more suitable for industry
The sub- material of the silicon based opto-electronics of application.
The embodiments of the present invention are implemented as follows, a kind of silicon based opto-electronics material, comprising:
Monocrystalline silicon piece；
The Er doping CeO being attached on the monocrystalline silicon piece2Film；And
It is attached to the Er doping CeO2The Ag stratum granulosum of film surface.
The embodiment of the present invention also provides a kind of preparation method of silicon based opto-electronics material, which comprises
Obtain clean monocrystalline silicon piece；
CeO is adulterated in monocrystalline silicon sheet surface preparation Er2Film obtains silicon substrate Er and adulterates CeO2Film；
CeO is adulterated in the Er2Film surface prepares Ag film, obtains silicon substrate Er and adulterates CeO2Film Ag film；
The silicon substrate Er is adulterated into CeO2Film Ag film is heat-treated under Ar gas shielded, is made in the Ag film
Ag forms Ag particle to get silicon based opto-electronics material.
The silicon based opto-electronics material of silicon based opto-electronics material preparation method provided in an embodiment of the present invention preparation, relative to not sinking
The silicon substrate Er of product Ag particle adulterates CeO2Thin-film material, excitation peak move to left, and photoluminescence intensity is significantly improved, especially Er3+
~the luminous peak intensity of 1540nm wavelength dramatically increases, luminous efficiency significantly improves, and luminescent properties are greatly improved,
It is more applicable for industry application.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of silicon based opto-electronics material provided in an embodiment of the present invention；
Fig. 2 is silicon substrate Er doping CeO provided in an embodiment of the present invention2The SEM phenogram of film；
Fig. 3 is CeO provided in an embodiment of the present invention2Film surface does not deposit Ag particle, embodiment one, embodiment two, reality
Apply the PLE map of the silicon based opto-electronics material of example three；
Fig. 4 is CeO provided in an embodiment of the present invention2Film surface does not deposit Ag particle, embodiment one, embodiment two, reality
Apply the photoluminescence spectrum of the silicon based opto-electronics material of example three.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 shows a kind of structure of silicon based opto-electronics material provided in an embodiment of the present invention, and details are as follows.
Silicon based opto-electronics material provided in an embodiment of the present invention includes that monocrystalline silicon piece, the Er being attached on the monocrystalline silicon piece mix
Miscellaneous CeO2Film and it is attached to Er doping CeO2The Ag stratum granulosum of film surface.
In embodiments of the present invention, the monocrystalline silicon piece be heavily B doped monocrystalline silicon piece, resistivity be 0.001-50 Ω cm,
It is orientated<100>.It is appreciated that monocrystalline silicon piece can also be other p-types or n-type doping monocrystalline silicon piece, not limited specifically
System.
In embodiments of the present invention, the Er adulterates CeO2Film with a thickness of 50-250nm, Ag in the Ag stratum granulosum
The size of particle is 20-80nm.
The preparation method of a kind of silicon based opto-electronics material provided in an embodiment of the present invention, comprising: obtain clean monocrystalline silicon piece；
CeO is adulterated in monocrystalline silicon sheet surface preparation Er2Film obtains silicon substrate Er and adulterates CeO2Film；CeO is adulterated in the Er2It is thin
Film surface prepares Ag film, obtains silicon substrate Er and adulterates CeO2Film Ag film；The silicon substrate Er is adulterated into CeO2Film Ag film exists
It is heat-treated under Ar gas shielded, the Ag film is made to form Ag stratum granulosum to get silicon based opto-electronics material.
It is as follows, the preparation method of silicon based opto-electronics material provided in an embodiment of the present invention is carried out with regard to performance by embodiment detailed
It describes in detail bright.
Embodiment one:
Monocrystalline silicon piece is subjected to RCA standard cleaning；
Monocrystalline silicon piece after cleaning is rinsed with HF: water=1:4 HF solution, obtains clean monocrystalline silicon piece；
CeO is adulterated in the Er that clean monocrystalline silicon sheet surface prepares 150nm thickness2Film；
CeO is adulterated in Er2Film surface prepares the Ag film of 5nm thickness；
The silicon substrate Er is adulterated into CeO2Film Ag film is placed in Equipment for Heating Processing, and logical Ar gas is to catching up with the heat treatment described to the greatest extent
Air in equipment；
Under conditions of keeping logical Ar gas, the Equipment for Heating Processing is controlled according to the rate of 100 DEG C/s and is warming up to 400 DEG C,
Continue to keep the temperature 1min, closes power supply；
Under conditions of keeping logical Ar gas, be cooled to room temperature to get.
Embodiment two:
Monocrystalline silicon piece is subjected to RCA standard cleaning；
Monocrystalline silicon piece after cleaning is rinsed with HF: water=1:4 HF solution, obtains clean monocrystalline silicon piece；
CeO is adulterated in the Er that clean monocrystalline silicon sheet surface prepares 50nm thickness2Film；
CeO is adulterated in Er2Film surface prepares the Ag film of 10nm thickness；
The silicon substrate Er is adulterated into CeO2Film Ag film is placed in Equipment for Heating Processing, and logical Ar gas is to catching up with the heat treatment described to the greatest extent
Air in equipment；
Under conditions of keeping logical Ar gas, the Equipment for Heating Processing is controlled according to the rate of 150 DEG C/s and is warming up to 450 DEG C,
Continue to keep the temperature 1.5min, closes power supply；
Under conditions of keeping logical Ar gas, be cooled to room temperature to get.
Embodiment three:
Monocrystalline silicon piece is subjected to RCA standard cleaning；
Monocrystalline silicon piece after cleaning is rinsed with HF: water=1:4 HF solution, obtains clean monocrystalline silicon piece；
CeO is adulterated in the Er that clean monocrystalline silicon sheet surface prepares 250nm thickness2Film；
CeO is adulterated in Er2Film surface prepares the Ag film of 15nm thickness；
The silicon substrate Er is adulterated into CeO2Film Ag film is placed in Equipment for Heating Processing, and logical Ar gas is to catching up with the heat treatment described to the greatest extent
Air in equipment；
Under conditions of keeping logical Ar gas, the Equipment for Heating Processing is controlled according to the rate of 200 DEG C/s and is warming up to 500 DEG C,
Continue to keep the temperature 2min, closes power supply；
Under conditions of keeping logical Ar gas, be cooled to room temperature to get.
In embodiments of the present invention, radio-frequency magnetron sputter method, sol-gal process, Gas Sensor Films Deposited by Pulsed Laser Deposition method can be passed through
CeO is adulterated Deng in clean monocrystalline silicon sheet surface preparation Er2Film, specifically with no restrictions, here, to utilize rf magnetron sputtering
Method preparation Er mixes CeO2For film, CeO is adulterated in clean monocrystalline silicon sheet surface preparation Er2The step of film, illustrates
Illustrate:
1. to adulterate 0.5% (molar ratio) Er2O3CeO2Ceramic target is as target；
2. clean silicon wafer is put into the cavity of magnetron sputtering apparatus, cavity is evacuated to 5 × 10-3Pa；
3. being subsequently passed argon gas, flow 30sccm, adjusting gate valve makes to sputter operating air pressure 1.2Pa；
4. sample stage temperature is risen to 120 DEG C, and the sputtering power that will act in ceramic target is adjusted to 125W；
5. sputtering time 2h obtains the Er that thickness is about 100nm and mixes CeO2Film.
6. the Er of above-mentioned preparation is mixed CeO2Film is put into tube furnace, leads to O2, it is heat-treated 6min at 800 DEG C, is made
The silicon substrate Er doping CeO got ready2Film.
In embodiments of the present invention, high vacuum multi-source thermal evaporation deposition method, electron beam evaporation method or direct current can be passed through
Magnetron sputtering method etc. adulterates CeO in Er2Film surface prepares Ag layers, here, to utilize high vacuum multi-source thermal evaporation deposition legal system
For Ag layers standby, CeO is adulterated in Er2Film surface preparation Ag film is illustrated:
1. silicon substrate Er is adulterated CeO2Film is fixed on the substrate in thermal evaporation deposition cavity, is blocked with baffle；Clip
Appropriate filamentary silver, and with being put into behind alcohol wipe surface in the quartz boat in hydatogenesis cavity；
Vacuum degree in cavity is evacuated to 5 × 10 2. opening aspiration pump-3Pa；
3. opening thermal evaporation power supply and film thickness gauge, electric current is adjusted to 160-200A, opens baffle, film thickness gauge display deposition speed
Rate 0.05-0.2nm/s；
4. closing baffle and thermal evaporation power supply when film thickness gauge shows that deposition thickness is 5-20nm.
In embodiments of the present invention, Equipment for Heating Processing selects RTP-300 fast heat treatment device, and those skilled in the art can
To understand, the selection of the Equipment for Heating Processing is only a kind of example, can be according to specific output in actual application process
It is specifically selected, restriction effect is not generated to protection scope of the present invention.RTP-300 fast heat treatment device with
30sccm rate leads to 15 minutes air that can be caught up in most equipment of Ar gas.
In the embodiment of the present invention, first it is passed through Ar gas and catches up with most equipment inner air and be heat-treated persistently leading in whole process
Argon gas can prevent Ag in rapid thermal treatment process to be oxidized and lead to the problem of enhancing luminescent decay or even not working.
In embodiments of the present invention, between heating rate, holding temperature and soaking time cooperate prepare uniformly and
The Ag particle of good sphericity, making, which enhances luminous function, maximizes, and avoids heating rate, holding temperature and soaking time cooperation not
Cause well to enhance the problem of luminescent decay does not work even.
In the present invention is implemented, performance characterization is carried out to the silicon based opto-electronics material of acquisition by the following method.Utilize Japan
Cold field emission scanning electron microscope (FESEM) the test Er of the HITACHI S-4800 model of Hitachi, Ltd's production adulterates CeO2
The pattern of film surface obtains Ag granular size.To film carry out luminescence generated by light test, uv-vis spectra test using
The SpectraPro 2500i monochromator system of Acton Research Corporation, examination of infrared spectrum using
The FLS920P spectrometer of Edinburgh Corporation.
Fig. 2 (a), 2 (b), 2 (c) are respectively the silicon substrate Er doping CeO of embodiment one, embodiment two, embodiment three2Film
SEM pattern, it is seen then that with the increase of Ag film deposition thickness, Ag granular size increases, and Ag mean particle size is successively about etc.
In 22nm, 50nm, 78nm.
Fig. 3 shows silicon substrate Er doping CeO2Film surface does not deposit Ag particle, embodiment one, embodiment two, embodiment
(photoluminescence excitation, excitation spectrum: substance is in different waves for the PLE map of three silicon based opto-electronics material
The situation of change of the emissive porwer of a certain wavelength light measured under the action of long exciting light), Cong Tuzhong is it will be seen that measurement
Er3+548nm wavelength emit light, three groups of samples for depositing Ag do not deposit the sample excitation wavelength peak of Ag particle and move to left, corresponding
The intensity peak of wavelength 548nm transmitting light obviously increases.
Fig. 4 shows silicon substrate Er doping CeO2Film surface does not deposit Ag particle, embodiment one, embodiment two, embodiment
The photoluminescence spectrum of three silicon based opto-electronics material, Cong Tuzhong is not it will be seen that three groups of samples of deposition Ag deposit Ag
The sample luminous intensity of grain is significantly improved, especially Er3+~the luminous peak intensity of 1540nm wavelength dramatically increases.
In conclusion the silicon based opto-electronics material of silicon based opto-electronics material preparation method preparation provided in an embodiment of the present invention, phase
CeO is adulterated for the silicon substrate Er of no deposition Ag particle2Thin-film material, excitation peak move to left, and photoluminescence intensity is significantly improved,
Especially Er3+~the luminous peak intensity of 1540nm wavelength dramatically increases, luminous efficiency significantly improves, and highest improves~1.5 times,
Luminescent properties are greatly improved, and are more applicable for industry application.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (8)
1. a kind of silicon based opto-electronics material characterized by comprising
Monocrystalline silicon piece；
The Er doping CeO being attached on the monocrystalline silicon piece2Film；And
It is attached to the Er doping CeO2The Ag stratum granulosum of film surface.
2. silicon based opto-electronics material as described in claim 1, which is characterized in that the monocrystalline silicon piece is heavily B doped monocrystalline silicon piece,
Resistivity is 0.001-50 Ω cm, is orientated<100>.
3. silicon based opto-electronics material as described in claim 1, which is characterized in that the Er adulterates CeO2Film with a thickness of 50-
250nm。
4. silicon based opto-electronics material as described in claim 1, which is characterized in that the size of Ag particle is in the Ag stratum granulosum
20-80nm。
5. a kind of preparation method of silicon based opto-electronics material, which is characterized in that the described method includes:
Obtain clean monocrystalline silicon piece；
CeO is adulterated in monocrystalline silicon sheet surface preparation Er2Film obtains silicon substrate Er and adulterates CeO2Film；
CeO is adulterated in the Er2Film surface prepares Ag film, obtains silicon substrate Er and adulterates CeO2Film Ag film；
The silicon substrate Er is adulterated into CeO2Film Ag film is heat-treated under Ar gas shielded, and the Ag film is made to form Ag
Granulosa is to get silicon based opto-electronics material.
6. the preparation method of silicon based opto-electronics material as claimed in claim 5, which is characterized in that described to obtain clean monocrystalline silicon
The step of piece, specifically includes:
Monocrystalline silicon piece is subjected to RCA standard cleaning；
Monocrystalline silicon piece after cleaning is rinsed with HF: water=1:4 HF solution, obtains clean monocrystalline silicon piece.
7. the preparation method of silicon based opto-electronics material as claimed in claim 5, which is characterized in that the Er adulterates CeO2Film
With a thickness of 50-250nm, the Ag film with a thickness of 5-20nm, the size of the Ag particle is 20-80nm.
8. the preparation method of silicon based opto-electronics material as claimed in claim 5, which is characterized in that the silicon substrate Er is adulterated CeO2
The step of film Ag film is heat-treated under Ar gas shielded, specifically includes:
The silicon substrate Er is adulterated into CeO2Film Ag film is placed in Equipment for Heating Processing, and logical Ar gas is to catching up with the Equipment for Heating Processing described to the greatest extent
In air；
Under conditions of keeping logical Ar gas, the Equipment for Heating Processing is controlled according to the rate of 100-200 DEG C/s and is warming up to 400-500
DEG C, continue to keep the temperature 1-2min, closes power supply；
Under conditions of keeping logical Ar gas, be cooled to room temperature to get.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060186377A1 (en) * | 2005-02-22 | 2006-08-24 | Sharp Kabushiki Kaisha | Oxynitride phosphor and semiconductor light-emitting device |
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