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CN109449133A - A kind of copper plating pure nickel bonding wire and preparation method thereof - Google Patents

A kind of copper plating pure nickel bonding wire and preparation method thereof Download PDF

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Publication number
CN109449133A
CN109449133A CN201811225237.4A CN201811225237A CN109449133A CN 109449133 A CN109449133 A CN 109449133A CN 201811225237 A CN201811225237 A CN 201811225237A CN 109449133 A CN109449133 A CN 109449133A
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Prior art keywords
copper
nickel
wire
annealing
bonding wire
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CN201811225237.4A
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Inventor
张军伟
张贺源
冯忠卿
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Shenzhen Unitoll Application Materials Co Ltd
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Shenzhen Unitoll Application Materials Co Ltd
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Priority to CN201811225237.4A priority Critical patent/CN109449133A/en
Publication of CN109449133A publication Critical patent/CN109449133A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/4382Applying permanent coating, e.g. in-situ coating
    • H01L2224/43825Plating, e.g. electroplating, electroless plating
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655Nickel (Ni) as principal constituent
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/4851Morphology of the connecting portion, e.g. grain size distribution
    • H01L2224/48511Heat affected zone [HAZ]

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wire Bonding (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

The invention discloses a kind of copper plating pure nickel bonding wires and preparation method thereof, which is the composite material that pure nickel is plated on copper wire surface.Preparation method includes the following steps: the prefabricated copper rod embryo material of S1: by the copper material of 99.9995% or more purity, refining time 50 minutes or more, preparing copper rod embryo material;S2 stretches copper wire: carrying out the copper rod embryo material that above-mentioned diameter is 8 millimeters -10 millimeters slightly to pull out processing, stretching copper wire to diameter is 90-100 microns;The fixed annealing of S3;S4 cleaning: the micro-wire that above-mentioned diameter is 90-100 microns is subjected to surface clean;S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating after annealing;S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, nitrogen and hydrogen mixture is replaced to carry out Annealing Protection with nitrogen plus dehydrated alcohol;S7 secondary cleaning: using dehydrated alcohol, in high temperature evaporation, explosive force destroys the foul on silk;S8: coiling is carried out to the bonding wire after cleaning.

Description

A kind of copper plating pure nickel bonding wire and preparation method thereof
Technical field
The present invention relates to bonding wire preparation technical field, specifically a kind of copper plating pure nickel bonding wire and preparation method thereof.
Background technique
Linking copper wire is with its excellent mechanical property, electric property and inexpensive factor, by gradually in microelectronics Packaging Using, but (bonding brass wire oxidation directly results in solder joint bonding strength not for being easily corroded on due to itself of existing copper wire Enough or rosin joint), the excessive needs for not adapting to low radian and multilayer encapsulation technology in heat affected area, it is corrosion-resistant (anti-to improve copper wire Oxidation) performance, reduce welding process in heat affected area length can accelerate application of the copper wire in microelectronics Packaging;For working as The selection of preceding bonding wire for packaging semiconductor alternative materials, market mainly select plating palladium copper wire.Plating palladium copper wire has high conductivity And thermal conductivity, and binder course between more reliable metal can be formed, thus bring the product under hot environment;But its binding force is high, Bonding force reliable sexual clorminance by force is easy to peel off in subsequent drawing process and and crack.
Summary of the invention
The purpose of the present invention is to provide a kind of copper plating pure nickel bonding wires and preparation method thereof, to solve above-mentioned background technique The problem of middle proposition.
To achieve the above object, the invention provides the following technical scheme:
A kind of copper plating pure nickel bonding wire, the bonding wire are the composite material that pure nickel is plated on copper wire surface.
As a further solution of the present invention: the nickel plating layer thick of the copper wire surface plating pure nickel bonding wire after plated It is 0.1 μm~0.3 μm.
As further scheme of the invention: the purity of the copper wire is not less than 99.9995%.
As further scheme of the invention: the pure nickel purity is at least 99.9990%.
As further scheme of the invention: it is 99.0000~99.9900% that the purity of the pure nickel, which is by purity, Nickel block is obtained by electrorefining, and the electrolyte of the electrorefining is high-purity water-reducible nickel nitrate solution, and electric current is 1.8~4.2A, voltage are 5~12V, and temperature is to a height of 65 DEG C.
A kind of preparation method of the copper plating pure nickel bonding wire, comprising the following steps: the prefabricated copper rod embryo material of S1: by purity 99.9995% or more copper material, in vacuum degree 10-2-10-4High temperature melt in the smelting furnace of Mpa, keeping smelting temperature is 1100 DEG C, Refining time 50 minutes or more, high-purity argon gas shielded was used in fusion process, solidification mode is finally used to prepare diameter as 8- 10 millimeters of copper rod embryo material;S2 stretches copper wire: the copper rod embryo material progress that above-mentioned diameter is 8 millimeters -10 millimeters slightly being pulled out processing, is drawn The copper wire that post-processing is 1 millimeter at diameter is stretched, further stretching copper wire to diameter is 90-100 microns;The fixed annealing of S3, The fixed annealing is that annealing is fixed in the copper wire after pre-stretching in nitrogen protection atmosphere, and annealing temperature is 450~500 DEG C, annealing time is 20~30min;S4 cleaning: the micro-wire that above-mentioned diameter is 90-100 microns is subjected to table Face cleaning;S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating, the nickel of nickel-plating liquid after annealing Ion concentration is 5-20 gram per liters, and nickel plating condition is the pH value control of nickel-plating liquid in 9.5-10.3, and the temperature control of nickel-plating liquid exists 40-60 degrees Celsius;S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, replace nitrogen hydrogen mixed with nitrogen plus dehydrated alcohol It closes gas and carries out Annealing Protection;Annealing temperature is 250~500 DEG C;S7 secondary cleaning: it is exploded using dehydrated alcohol in high temperature evaporation Power destroys the foul on silk;S8: coiling is carried out to the bonding wire after cleaning.
As further scheme of the invention: the step S4 cleaning uses ultrasonic technology, and cleansing medium uses nothing Water-alcohol.
As the present invention further scheme: the coiling is that treated that bonding wire is wound on spool by surface cleaning On, winding tension be 2~15g, threading speed be 50~80m/min, line spacing be 4.5~5.5mm, bundling length be 300~ 1000m/ axis.
Compared with prior art, the beneficial effects of the present invention are: nickel and copper have good binding force, while having very high Moulding, and avoid peeling off in subsequent drawing process and the case where crackle;Bonding wire memory is greatly reduced by twice annealing simultaneously Stress and avoid the occurrence of crackle, substantially increase yield rate and production efficiency, pure-nickel-layer simultaneously can surface copper oxidation, increase Add its stability, and cost is relatively low.
Specific embodiment
The technical solution of the patent is explained in further detail With reference to embodiment.
Embodiment one:
A kind of copper plating pure nickel bonding wire, the bonding wire are the composite material that pure nickel is plated on copper wire surface.
The nickel plating layer thick of copper wire surface plating pure nickel bonding wire after plated is 0.1 μm.
The purity of the copper wire is 99.9995%.
The pure nickel purity is 99.9990%.
The purity of the pure nickel is that the nickel block for being 99.0000% by purity is obtained by electrorefining, the electrolysis The electrolyte of purification is high-purity water-reducible nickel nitrate solution, and electric current 1.8A, voltage 5V, temperature is to a height of 65 DEG C.
A kind of preparation method of the copper plating pure nickel bonding wire, comprising the following steps:
The prefabricated copper rod embryo material of S1: by the copper material of 99.9995% or more purity, in vacuum degree 10-2High temperature melt in the smelting furnace of Mpa, Keeping smelting temperature is 1100 DEG C, refining time 50 minutes or more, high-purity argon gas shielded is used in fusion process, is finally used Solidification mode prepares the copper rod embryo material that diameter is 8 millimeters;
S2 stretches copper wire: carrying out the copper rod embryo material that above-mentioned diameter is 8 millimeters slightly to pull out processing, stretching post-processing into diameter is 1 milli The copper wire of rice, further stretching copper wire to diameter is 90 microns;
The fixed annealing of S3, the fixed annealing is that the copper wire after pre-stretching is fixed in nitrogen protection atmosphere Annealing, annealing temperature are 450 DEG C, annealing time 20min;
S4 cleaning: the micro-wire that above-mentioned diameter is 90 microns is subjected to surface clean;
S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating after annealing, the nickel of nickel-plating liquid from Sub- concentration is 5 gram per liters, and nickel plating condition is the pH value control of nickel-plating liquid 9.53, and the temperature of nickel-plating liquid is controlled at 40 degrees Celsius;
S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, nitrogen and hydrogen mixture is replaced to carry out with nitrogen plus dehydrated alcohol Annealing Protection;Annealing temperature is 250 DEG C;
S7 secondary cleaning: using dehydrated alcohol, in high temperature evaporation, explosive force destroys the foul on silk;S8: to the bonding after cleaning Silk carries out coiling.
The step S4 cleaning uses ultrasonic technology, and cleansing medium uses absolute alcohol.
The coiling is that treated that bonding wire is wound on spool by surface cleaning, winding tension 2g, threading speed For 50m/min, line spacing is 4.5mm, and bundling length is 300m/ axis.
Embodiment two:
A kind of copper plating pure nickel bonding wire, the bonding wire are the composite material that pure nickel is plated on copper wire surface.
The nickel plating layer thick of copper wire surface plating pure nickel bonding wire after plated is 0.2 μm.
The purity of the copper wire is 99.9995%.
The pure nickel purity is 99.9990%.
The purity of the pure nickel is that the nickel block for being 99.9900% by purity is obtained by electrorefining, the electrolysis The electrolyte of purification is high-purity water-reducible nickel nitrate solution, and electric current 3A, voltage 8V, temperature is to a height of 65 DEG C.
A kind of preparation method of the copper plating pure nickel bonding wire, comprising the following steps:
The prefabricated copper rod embryo material of S1: by the copper material of 99.9995% or more purity, in vacuum degree 10-3High temperature melt in the smelting furnace of Mpa, Keeping smelting temperature is 1100 DEG C, refining time 50 minutes or more, high-purity argon gas shielded is used in fusion process, is finally used Solidification mode prepares the copper rod embryo material that diameter is 9 millimeters;
S2 stretches copper wire: carrying out the copper rod embryo material that above-mentioned diameter is 90 millimeters slightly to pull out processing, stretching post-processing into diameter is 1 milli The copper wire of rice, further stretching copper wire to diameter is 95 microns;
The fixed annealing of S3, the fixed annealing is that the copper wire after pre-stretching is fixed in nitrogen protection atmosphere Annealing, annealing temperature are 480 DEG C, annealing time 250min;
S4 cleaning: the micro-wire that above-mentioned diameter is 95 microns is subjected to surface clean;
S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating after annealing, the nickel of nickel-plating liquid from Sub- concentration is 12 gram per liters, and nickel plating condition is the pH value control of nickel-plating liquid 10, and the temperature of nickel-plating liquid is controlled at 50 degrees Celsius;
S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, nitrogen and hydrogen mixture is replaced to carry out with nitrogen plus dehydrated alcohol Annealing Protection;Annealing temperature is 350 DEG C;
S7 secondary cleaning: using dehydrated alcohol, in high temperature evaporation, explosive force destroys the foul on silk;
S8: coiling is carried out to the bonding wire after cleaning.
The step S4 cleaning uses ultrasonic technology, and cleansing medium uses absolute alcohol.
The coiling is that treated that bonding wire is wound on spool by surface cleaning, winding tension 8g, threading speed For 65m/min, line spacing is 5mm, and bundling length is 600m/ axis.
Embodiment three:
A kind of copper plating pure nickel bonding wire, the bonding wire are the composite material that pure nickel is plated on copper wire surface.
The nickel plating layer thick of copper wire surface plating pure nickel bonding wire after plated is 0.3 μm.
The purity of the copper wire is 99.9995%.
The pure nickel purity is 99.9990%.
The purity of the pure nickel is that the nickel block for being 99.9900% by purity is obtained by electrorefining, the electrolysis The electrolyte of purification is high-purity water-reducible nickel nitrate solution, and electric current 4.2A, voltage 12V, temperature is to a height of 65 DEG C.
A kind of preparation method of the copper plating pure nickel bonding wire, comprising the following steps:
The prefabricated copper rod embryo material of S1: by the copper material of 99.9995% or more purity, in vacuum degree 10-4High temperature melt in the smelting furnace of Mpa, Keeping smelting temperature is 1100 DEG C, refining time 50 minutes or more, high-purity argon gas shielded is used in fusion process, is finally used Solidification mode prepares the copper rod embryo material that diameter is 10 millimeters;
S2 stretches copper wire: carrying out the copper rod embryo material that above-mentioned diameter is 10 millimeters slightly to pull out processing, stretching post-processing into diameter is 1 milli The copper wire of rice, further stretching copper wire to diameter is 100 microns;
The fixed annealing of S3, the fixed annealing is that the copper wire after pre-stretching is fixed in nitrogen protection atmosphere Annealing, annealing temperature are 500 DEG C, annealing time 30min;
S4 cleaning: the micro-wire that above-mentioned diameter is 100 microns is subjected to surface clean;
S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating after annealing, the nickel of nickel-plating liquid from Sub- concentration is 20 gram per liters, and nickel plating condition is the pH value control of nickel-plating liquid 10.3, and the temperature of nickel-plating liquid is controlled at 60 degrees Celsius;
S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, nitrogen and hydrogen mixture is replaced to carry out with nitrogen plus dehydrated alcohol Annealing Protection;Annealing temperature is 500 DEG C;
S7 secondary cleaning: using dehydrated alcohol, in high temperature evaporation, explosive force destroys the foul on silk;
S8: coiling is carried out to the bonding wire after cleaning.
The step S4 cleaning uses ultrasonic technology, and cleansing medium uses absolute alcohol.
The coiling is that treated that bonding wire is wound on spool by surface cleaning, and winding tension is 2~15g, coiling Speed is 50~80m/min, and line spacing is 4.5~5.5mm, and bundling length is 300~1000m/ axis.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims Variation is included within the present invention.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art The other embodiments being understood that.

Claims (8)

1. a kind of copper plates pure nickel bonding wire, which is characterized in that the bonding wire is the composite material that pure nickel is plated on copper wire surface.
2. copper according to claim 1 plates pure nickel bonding wire, which is characterized in that the copper wire surface plating after plated is pure The nickel plating layer thick of nickel bonding wire is 0.1 μm~0.3 μm.
3. copper according to claim 1 plates pure nickel bonding wire, which is characterized in that the purity of the copper wire is not less than 99.9995%。
4. copper according to claim 1 plates pure nickel bonding wire, which is characterized in that the pure nickel purity is at least 99.9990%.
5. copper according to claim 1 plates pure nickel bonding wire, which is characterized in that the purity of the pure nickel is to be by purity What 99.0000~99.9900% nickel block was obtained by electrorefining, the electrolyte of the electrorefining is high purity water dilution Nickel nitrate solution, electric current be 1.8~4.2A, voltage be 5~12V, temperature is to a height of 65 DEG C.
6. a kind of preparation method of the copper plating pure nickel bonding wire as described in claim 1-2 is any, which is characterized in that including following Step:
The prefabricated copper rod embryo material of S1: by the copper material of 99.9995% or more purity, in vacuum degree 10-2-10-4High-temperature molten in the smelting furnace of Mpa Change, keeping smelting temperature is 1100 DEG C, refining time 50 minutes or more, high-purity argon gas shielded is used in fusion process, finally Solidification mode is used to prepare diameter as 8-10 millimeters of copper rod embryo material;
S2 stretches copper wire: carrying out the copper rod embryo material that above-mentioned diameter is 8 millimeters -10 millimeters slightly to pull out processing, stretches post-processing Cheng Zhi The copper wire that diameter is 1 millimeter, further stretching copper wire to diameter is 90-100 microns;
The fixed annealing of S3, the fixed annealing is that the copper wire after pre-stretching is fixed in nitrogen protection atmosphere Annealing, annealing temperature are 450~500 DEG C, and annealing time is 20~30min;
S4 cleaning: the micro-wire that above-mentioned diameter is 90-100 microns is subjected to surface clean;
S5 chemical nickel plating: by copper bonding wire finished product, the single nickel-plating liquid that is put into carries out chemical nickel plating after annealing, the nickel of nickel-plating liquid from Sub- concentration is 5-20 gram per liters, and nickel plating condition is the pH value control of nickel-plating liquid in 9.5-10.3, and the temperature of nickel-plating liquid is controlled in 40- 60 degrees Celsius;
S6 re-annealing: using the characteristic of dehydrated alcohol reductive copper oxide, nitrogen and hydrogen mixture is replaced to carry out with nitrogen plus dehydrated alcohol Annealing Protection;Annealing temperature is 250~500 DEG C;
S7 secondary cleaning: using dehydrated alcohol, in high temperature evaporation, explosive force destroys the foul on silk;
S8: coiling is carried out to the bonding wire after cleaning.
7. the preparation method of copper plating pure nickel bonding wire according to claim 5, which is characterized in that the step S4 cleaning is adopted With ultrasonic technology, cleansing medium uses absolute alcohol.
8. the preparation method of copper plating pure nickel bonding wire according to claim 5, which is characterized in that the coiling is by surface Bonding wire after cleaning treatment is wound on spool, and winding tension is 2~15g, and threading speed is 50~80m/min, line spacing For 4.5~5.5mm, bundling length is 300~1000m/ axis.
CN201811225237.4A 2018-10-20 2018-10-20 A kind of copper plating pure nickel bonding wire and preparation method thereof Pending CN109449133A (en)

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CN111599782A (en) * 2020-04-03 2020-08-28 广东佳博电子科技有限公司 Copper-based bonding wire with nickel plated surface and preparation method thereof
CN113106505A (en) * 2020-01-13 2021-07-13 深圳市业展电子有限公司 Surface treatment process for improving high-temperature anti-oxidation performance of resistor body and resistor body thereof
CN113948253A (en) * 2021-10-26 2022-01-18 怀化宇隆电工材料有限公司 Preparation method of enameled wire with better physical properties
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