CN109378333A - Display panel and display device - Google Patents
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- CN109378333A CN109378333A CN201811222092.2A CN201811222092A CN109378333A CN 109378333 A CN109378333 A CN 109378333A CN 201811222092 A CN201811222092 A CN 201811222092A CN 109378333 A CN109378333 A CN 109378333A
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- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 238000001514 detection method Methods 0.000 claims description 57
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 3
- 238000011897 real-time detection Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
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Abstract
The invention discloses a kind of display panel and display devices.The display panel includes the first substrate and the second substrate being oppositely arranged, the side close to second substrate of first substrate is provided with multiple sub-pixel units, the side close to first substrate of second substrate is provided with multiple optical detecting units, and the optical detecting unit is correspondingly arranged with the sub-pixel unit；The optical detecting unit is used to obtain the optical signal that the corresponding sub-pixel unit issues, and the optical signal is converted to electric signal.Display panel provided by the present invention and display device are capable of the light intensity variation of real-time detection sub-pix, are compensated in real time to sub-pix, to achieve the purpose that the display state for improving display device.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a display panel and a display device.
Background
In an Organic Light Emitting Diode (OLED) display device, especially in the fabrication of an oxide organic light emitting diode (OxideOLED) display device, in addition to a pixel internal design compensation circuit, it is generally necessary to perform a pixel (pixel) level precise optical calibration by using a Charge Coupled Device (CCD) after Gamma (Gamma) debugging is completed, perform an external electrical compensation of a pixel circuit, and compensate for a shift of a threshold voltage (Vth). However, the compensation method cannot detect the light intensity variation of each sub-pixel in real time, so that the OLED display device cannot reach the optimal display state.
Disclosure of Invention
The present invention is directed to at least one of the above-mentioned problems in the prior art, and provides a display panel and a display device, which are used to detect the light intensity variation of sub-pixels in real time and compensate the sub-pixels in real time, so as to achieve the purpose of improving the display state of the display device.
In order to achieve the above object, the present invention provides a display panel, which includes a first substrate and a second substrate disposed opposite to each other, wherein a side of the first substrate close to the second substrate is provided with a plurality of sub-pixel units, and a side of the second substrate close to the first substrate is provided with a plurality of light detection units, and the light detection units are disposed corresponding to the sub-pixel units;
the light detection unit is used for acquiring the optical signals sent by the corresponding sub-pixel units and converting the optical signals into electric signals.
Optionally, a side of the light detection unit away from the second substrate is provided with a light-transmitting and reflecting structure, and the light-transmitting and reflecting structure is used for transmitting a part of the optical signal emitted by the sub-pixel unit towards the light detection unit and reflecting another part of the optical signal.
Optionally, the sub-pixel unit comprises a first electrode, a second electrode and an organic light emitting layer between the first electrode and the second electrode;
the light transmitting and reflecting structure comprises a light shielding layer, the light shielding layer is arranged between the light detection unit and the second electrode, and a plurality of opening areas corresponding to the sub-pixel units are arranged in the light shielding layer.
Optionally, the sub-pixel unit includes a first electrode, a second electrode and an organic light emitting layer located between the first electrode and the second electrode, the second electrode is capable of transmitting a part of the optical signal emitted by the sub-pixel unit towards the light detection unit and reflecting another part of the optical signal, and the transflective structure includes the second electrode.
Optionally, the second electrode includes a first sub-electrode and a second sub-electrode, the organic light emitting layer is located between the first sub-electrode and the first electrode, and the second sub-electrode is located on a side of the first sub-electrode far from the organic light emitting layer.
Optionally, the material of the first sub-electrode is a transparent conductive material, and the material of the second sub-electrode is a metal material.
Optionally, the light detection unit includes a second thin film transistor, a third electrode connected to the second thin film transistor, a fourth electrode, and a photoelectric conversion layer between the third electrode and the fourth electrode.
Optionally, the material of the photoelectric conversion layer is Si, an organic photosensitive material, or copper indium gallium selenide.
Optionally, the photoelectric conversion layers are arranged in one-to-one correspondence with the sub-pixel units, and the orthographic projection of the photoelectric conversion layers on the second substrate is at least partially overlapped with the orthographic projection of the corresponding sub-pixel units on the second substrate; or,
the photoelectric conversion layer is arranged corresponding to all the sub-pixel units, and the orthographic projection of the photoelectric conversion layer on the second substrate covers the orthographic projection of all the sub-pixel units on the second substrate.
In order to achieve the above object, the present invention provides a display device including the above display panel.
The invention has the beneficial effects that:
in the technical scheme of the display panel and the display device provided by the invention, the light detection units are arranged corresponding to the sub-pixel units, and the light detection units are used for acquiring light signals sent by the corresponding sub-pixel units and converting the light signals into electric signals. The current actual light intensity of each sub-pixel unit, namely the change of the optical signal, is monitored in real time through the optical detection unit, so that the sub-pixel unit can be compensated in real time according to the current actual light intensity change of the sub-pixel unit, and the display state of the display device is improved.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a display panel according to a second embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a first substrate of the display panel shown in FIG. 2;
FIG. 4 is a schematic structural diagram of a second substrate of the display panel shown in FIG. 2;
fig. 5 is a schematic structural diagram of a display panel according to a third embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a first substrate of the display panel shown in FIG. 5;
FIG. 7 is a schematic structural diagram of a second substrate of the display panel shown in FIG. 5;
FIG. 8 is a graph showing the photoelectric conversion efficiency of an organic photosensitive material;
fig. 9 is a diagram illustrating photoelectric conversion efficiencies of cigs and a-Si.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the display panel and the display device provided in the present invention in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention, as shown in fig. 1, the display panel includes a first substrate 1 and a second substrate 2 that are disposed opposite to each other, a side of the first substrate 1 close to the second substrate 2 is provided with a plurality of sub-pixel units 3, a side of the second substrate 2 close to the first substrate 1 is provided with a plurality of photo detection units 4, the photo detection units 4 are disposed corresponding to the sub-pixel units 3, and the photo detection units 4 are configured to acquire optical signals emitted by the corresponding sub-pixel units 3 and convert the optical signals into electrical signals.
In the present embodiment, at least one light detection unit 4 is disposed for each sub-pixel unit 3, and preferably, one light detection unit 4 is disposed for each sub-pixel unit 3. In this embodiment, the current actual light emitting intensity of each sub-pixel unit 3, that is, the optical signal, is monitored in real time by the light detection unit 4, and the optical signal is converted into an electrical signal, so that the driving current of the sub-pixel unit 3 can be adjusted in real time according to the electrical signal, so as to compensate the sub-pixel unit in real time, and thus the display state of the display device can be improved. For example, the light intensity of the sub-pixel unit is attenuated with the time, when the attenuation of the light intensity of the sub-pixel unit is detected, the driving current of the sub-pixel unit can be adjusted in real time according to the light intensity change so as to compensate the sub-pixel unit in real time, so that the light intensity of the sub-pixel unit reaches the set light intensity, and the display state of the display device is improved.
In the technical solution of the display panel provided in this embodiment, the light detection unit is disposed corresponding to the sub-pixel unit, and the light detection unit is configured to acquire a light signal emitted by the corresponding sub-pixel unit and convert the light signal into an electrical signal. The current actual light intensity of each sub-pixel unit, namely the change of the optical signal, is monitored in real time through the optical detection unit, so that the sub-pixel unit can be compensated in real time according to the current actual light intensity change of the sub-pixel unit, and the display state of the display device is improved.
Fig. 2 is a schematic structural diagram of a display panel according to a second embodiment of the present invention, and as shown in fig. 2, the display panel includes a first substrate 1 and a second substrate 2 that are disposed opposite to each other, a side of the first substrate 1 close to the second substrate 2 is provided with a plurality of sub-pixel units, a side of the second substrate 2 close to the first substrate 1 is provided with a plurality of photo detection units, and the photo detection units are disposed corresponding to the sub-pixel units and are configured to acquire optical signals emitted by the corresponding sub-pixel units and convert the optical signals into electrical signals.
Preferably, the side of the light detection unit remote from the second substrate 2 is provided with a transflective structure for transmitting a part of the light signal emitted by the sub-pixel unit towards the light detection unit and reflecting another part. Specifically, in the optical signal emitted by the sub-pixel unit towards the light detection unit, a part of the optical signal is transmitted to the light detection unit through the transflective structure, and the other part of the optical signal is reflected by the transflective structure to be emitted as display light.
Specifically, the display panel includes a first substrate and a second substrate which are oppositely disposed, fig. 3 is a schematic structural diagram of the first substrate of the display panel in fig. 2, and fig. 4 is a schematic structural diagram of the second substrate of the display panel in fig. 2, as shown in fig. 3 and 4, the first substrate includes a first base 1 and a plurality of sub-pixel units located on the first base 1, and the second substrate includes a second base 2 and a plurality of light detection units located on the second base 2.
Specifically, as shown in fig. 2 and 3, a side of the first substrate 1 adjacent to the second substrate 2 is provided with a plurality of first pixel defining Patterns (PDL)5, and the sub-pixel units are defined between the adjacent first pixel defining patterns 5, each sub-pixel unit including a first electrode 31, a second electrode 32, and an organic light Emitting Layer (EL)33 between the first electrode 31 and the second electrode 32. Specifically, in the sub-pixel unit, the first electrode 31 is located on a side of the first substrate 1 close to the second substrate 2, the organic light emitting layer 33 is located on a side of the first electrode 31 far from the first substrate 1, and the second electrode 32 is located on a side of the organic light emitting layer 33 far from the first substrate 1. In this embodiment, the organic light emitting layer 33 may include: a hole injection layer, a hole transport layer, an electron blocking layer, an electroluminescent layer, an electron transport layer and an electron injection layer (not shown in the figures) which are arranged from bottom to top in sequence.
Specifically, as shown in fig. 2 and 3, the first substrate further includes a first shielding Layer (LS)6, the first shielding layer 6 is located on one side of the first substrate 1 close to the second substrate 2, and the first shielding layer 6 is located in a region corresponding to the first pixel definition pattern, that is, a region other than a region where the sub-pixel unit is located.
Specifically, as shown in fig. 2 and 3, the first substrate further includes a first Buffer layer (Buffer)7, and the first Buffer layer (Buffer)7 is located on a side of the first shielding layer 6 away from the first base 1 and covers the first base 1.
Specifically, the first substrate further includes a first thin film transistor, and the first thin film transistor is located on one side of the first buffer layer 7, which is far away from the first base 1, and is located in a region corresponding to the first pixel defining pattern 5, that is, a region other than a region where the sub-pixel unit is located. As shown in fig. 2 and 3, the first thin film transistor includes a first active layer (ACT)8, a first Gate (Gate)9, and a first Source Drain (SD)10, wherein the first source drain 10 is connected to the first active layer 8.
Specifically, the first active layer 8 is located on one side of the first buffer layer 7 away from the first substrate 1, a first insulating layer (GI)11 is further disposed on one side of the first active layer 8 away from the first substrate 1, the first gate 9 is located on one side of the first insulating layer 11 away from the first substrate 1, a second insulating layer (PVX)12 is further disposed on one side of the first gate 9 away from the first substrate 1, the second insulating layer 12 covers the first substrate 1, the first source drain 10 is located on one side of the second insulating layer 12 away from the first substrate 1, and the first source drain 10 is connected to the first active layer 8 through a via hole in the second insulating layer 12.
Specifically, as shown in fig. 2 and fig. 3, the first substrate further includes a first Planarization Layer (PLN)13, the first planarization layer 13 is located on a side of the first source/drain 10 away from the first substrate 1, and the first planarization layer 13 covers the first substrate 1.
In the present embodiment, as shown in fig. 2 and 3, the first pixel defining pattern 5 is located on a side of the first flat layer 13 away from the first substrate 1.
In this embodiment, as shown in fig. 2 and fig. 3, the first electrode 31 further extends from the sub-pixel unit to a region corresponding to the first pixel defining pattern 5, and is connected to the first source/drain electrode 10 through a via hole in the first planarization layer 13. As shown in fig. 2 and 3, the second electrode 32 further extends from the sub-pixel unit to a region corresponding to the first pixel defining pattern 5, and covers the first substrate 1.
Specifically, the first substrate further includes a first spacer (PS)14, and the first spacer 14 is located on a side of the first pixel defining pattern 5 away from the first substrate 1 and located in a region corresponding to the first pixel defining pattern 5.
In this embodiment, the first electrode 31 is preferably an Anode (Anode) and the second electrode 32 is preferably a Cathode (Cathode). Preferably, the materials of the first electrode 31 and the second electrode 32 are both transparent conductive materials.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a second shielding Layer (LS)15, the second shielding layer 15 is located on a side of the second substrate 2 close to the first substrate 1, and the second shielding layer 15 is located in a region corresponding to the first pixel defining pattern 5.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a second Buffer layer (Buffer)16, and the second Buffer layer 16 is located on a side of the second shielding layer 15 away from the second base 2 and covers the second base 2.
Specifically, the second substrate further includes a second thin film transistor, which is located on a side of the second buffer layer 16 away from the second base 2 and located in a region corresponding to the first pixel defining pattern 5. As shown in fig. 2 and 4, the second thin film transistor includes a second active layer (ACT)17, a second Gate electrode (Gate)18, and a second source drain electrode (SD)19, wherein the second source drain electrode 19 is connected to the second active layer 17.
Specifically, the second active layer 17 is located on a side of the second buffer layer 16 away from the second substrate 2, a third insulating layer (GI)20 is further disposed on a side of the second active layer 17 away from the second substrate 2, the second gate 18 is located on a side of the third insulating layer 20 away from the second substrate 2, a fourth insulating layer (PVX)21 is further disposed on a side of the second gate 18 away from the second substrate 2, the fourth insulating layer 21 covers the second substrate 2, the second source drain 19 is located on a side of the fourth insulating layer 21 away from the second substrate 2, and the second source drain 19 is connected to the second active layer 17 through a via hole in the fourth insulating layer 21.
In this embodiment, the light detection units are preferably arranged in one-to-one correspondence with the sub-pixel units. As shown in fig. 2 and 4, the light detecting unit includes the second thin film transistor, a third electrode connected to the second thin film transistor, a photoelectric conversion layer 22, and a fourth electrode 23, the photoelectric conversion layer 22 being located between the third electrode and the fourth electrode 23. Preferably, the third electrode is a portion of the second source-drain electrode 19 extending from a region of the second substrate 2 corresponding to the first pixel defining pattern 5 to a region corresponding to the sub-pixel unit, the photoelectric conversion layer 22 is located on a side of the third electrode away from the second substrate 2, and the fourth electrode 23 is located on a side of the photoelectric conversion layer 22 away from the second substrate 2. Specifically, the photoelectric conversion layers 22 are disposed in one-to-one correspondence with the sub-pixel units, and an orthogonal projection of the photoelectric conversion layer 22 on the second substrate 2 at least partially overlaps an orthogonal projection of the corresponding sub-pixel unit on the second substrate 2, and an orthogonal projection of the fourth electrode 23 on the second substrate 2 at least partially overlaps an orthogonal projection of the corresponding sub-pixel unit on the second substrate 2.
Preferably, the photoelectric conversion layer 22 is a PIN junction, in other words, the light detection unit includes a PIN photosensor (PINSensor). Preferably, the material of the photoelectric conversion layer 22 is Si.
Preferably, the material of the fourth electrode 23 is a transparent conductive material, for example, ITO.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a fifth insulating layer (PVX)24, and the fifth insulating layer 24 is located on a side of the fourth electrode 23 away from the second base 2 and covers the second base 2.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a second Planarization Layer (PLN)25, and the second planarization layer 25 is located on a side of the fifth insulating layer 24 away from the second substrate 2 and covers the second substrate 2.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a light shielding layer 26, and the light transmitting and reflecting structure includes the light shielding layer 26, and the light shielding layer 26 is disposed between the light detection unit and the second electrode 32. Specifically, the light-shielding layer 26 is located on a side of the second flat layer 25 away from the second substrate 2. In the present embodiment, in the region of the second substrate 2 corresponding to the sub-pixel unit, a plurality of opening regions L corresponding to the sub-pixel unit are provided in the light-shielding layer 26. As shown in fig. 2 and 4, the light-shielding layer 26 includes a plurality of light-shielding patterns, and in the region of the corresponding sub-pixel unit of the second substrate 2, opening regions L for transmitting a part of the light signal emitted from the sub-pixel unit toward the light detecting unit are formed between adjacent light-shielding patterns, and the light-shielding patterns are for reflecting another part of the light signal emitted from the sub-pixel unit toward the light detecting unit. In the present embodiment, in the region of the second substrate 2 corresponding to the first pixel defining pattern 5, the light shielding layer 26 is connected to the fourth electrode 23 through the via holes formed in the second planarization layer 25 and the fifth insulating layer 24.
Specifically, as shown in fig. 2 and 4, an orthogonal projection of the photoelectric conversion layer 22 on the second substrate 2 covers an orthogonal projection of at least a part of the opening region L on the second substrate 2, and an orthogonal projection of the fourth electrode 23 on the second substrate 2 covers an orthogonal projection of at least a part of the opening region L on the second substrate 2. Preferably, an orthographic projection of the photoelectric conversion layer 22 on the second substrate 2 covers an orthographic projection of the entire opening region L on the second substrate 2, and an orthographic projection of the fourth electrode 23 on the second substrate 2 covers an orthographic projection of the entire opening region L on the second substrate 2.
In this embodiment, the material of the light-shielding layer 26 is a conductive material. Preferably, the material of the light shielding layer 26 is a highly reflective conductive material.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a second Pixel Defining Layer (PDL)27, and the second pixel defining layer 27 is located on a side of the light shielding layer 26 away from the second substrate 2 and covers the second substrate 2.
Specifically, as shown in fig. 2 and 4, the second substrate further includes a second spacer (PS)28, and the second spacer 28 is located on a side of the second pixel defining layer 27 away from the second substrate 2 and is disposed corresponding to the first spacer 14.
In this embodiment, the material of the first substrate 1 is a glass material or a Polyimide (PI) material, and the material of the second substrate 2 is a glass material or a Polyimide (PI) material.
In this embodiment, preferably, the display panel is an OLED panel, for example, an Oxide OLED panel. More preferably, the display panel is a bottom emission type OLED panel.
In this embodiment, a part of the light emitted from the organic light-emitting layer 33 is directly emitted and displayed, and the other part of the light is incident on the light detection unit through the opening region L of the light-shielding layer 26. Specifically, of the other part of the light, part of the light is reflected by the light shielding layer 26 and emitted as display light, and part of the light is incident on the fourth electrode 23 of the light detection unit through the opening region L of the light shielding layer 26. After the optical detection unit acquires the optical signal from the sub-pixel unit, the optical signal is converted into an electrical signal, namely a photocurrent, so that the driving current of the sub-pixel unit can be adjusted in real time according to the electrical signal, and the sub-pixel unit is compensated, thereby improving the display state of the display device.
In the technical solution of the display panel provided in this embodiment, the light detection unit is disposed corresponding to the sub-pixel unit, and the light detection unit is configured to acquire a light signal emitted by the corresponding sub-pixel unit and convert the light signal into an electrical signal. The current actual light intensity of each sub-pixel unit, namely the change of the optical signal, is monitored in real time through the optical detection unit, so that the sub-pixel unit can be compensated in real time according to the current actual light intensity change of the sub-pixel unit, and the display state of the display device is improved.
Fig. 5 is a schematic structural diagram of a display panel according to a third embodiment of the present invention, and as shown in fig. 5, the display panel includes a first substrate 1 and a second substrate 2 that are disposed opposite to each other, a side of the first substrate 1 close to the second substrate 2 is provided with a plurality of sub-pixel units, a side of the second substrate 2 close to the first substrate 1 is provided with a plurality of photo detection units, and the photo detection units are disposed corresponding to the sub-pixel units and are configured to acquire optical signals emitted by the corresponding sub-pixel units and convert the optical signals into electrical signals.
Preferably, the side of the light detection unit remote from the second substrate 2 is provided with a transflective structure for transmitting a part of the light signal emitted by the sub-pixel unit towards the light detection unit and reflecting another part. Specifically, in the optical signal emitted by the sub-pixel unit towards the light detection unit, a part of the optical signal is transmitted to the light detection unit through the transflective structure, and the other part of the optical signal is reflected by the transflective structure to be emitted as display light.
Specifically, the display panel includes a first substrate and a second substrate which are oppositely disposed, fig. 6 is a schematic structural diagram of the first substrate of the display panel in fig. 5, and fig. 7 is a schematic structural diagram of the second substrate of the display panel in fig. 5, as shown in fig. 6 and 7, the first substrate includes a first base 1 and a plurality of sub-pixel units located on the first base 1, and the second substrate includes a second base 2 and a plurality of light detection units located on the second base 2.
Specifically, as shown in fig. 5 to 7, the present embodiment is different from the second embodiment in that: in this embodiment, the second electrode 32 is capable of transmitting a part of the optical signal emitted from the sub-pixel unit toward the light detecting unit and reflecting another part of the optical signal, and the transflective structure includes the second electrode 32.
In this embodiment, preferably, the second electrode 32 includes a first sub-electrode 321 and a second sub-electrode 322, the first sub-electrode 321 is located on a side of the organic light emitting layer 33 away from the first substrate 1 and covers the first substrate 1, and the second sub-electrode 322 is located on a side of the first sub-electrode 321 away from the first substrate 1 and covers the first substrate 1. The second sub-electrode 322 is capable of transmitting a part of the optical signal emitted from the sub-pixel unit to the light detection unit and reflecting another part of the optical signal.
In this embodiment, in the light detection unit, the third electrode 29 is located on a side of the second planarization layer 25 away from the second substrate 2 and covers the second substrate 2, the third electrode 29 is connected to the second source/drain electrode 19 of the second thin film transistor through a via hole in the second planarization layer 25, the photoelectric conversion layer 22 is located on a side of the third electrode away from the second substrate 2 and covers the second substrate 2, the fourth electrode 23 is located on a side of the photoelectric conversion layer 22 away from the second substrate 2, and the fourth electrode 23 is located in a region of the second substrate 2 excluding a region corresponding to the first spacer 14. In other words, the photoelectric conversion layer 22 is disposed corresponding to all the sub-pixel units, and an orthogonal projection of the photoelectric conversion layer 22 on the second substrate 2 covers an orthogonal projection of all the sub-pixel units on the second substrate 2, and similarly, an orthogonal projection of the fourth electrode 23 on the second substrate 2 covers an orthogonal projection of all the sub-pixel units on the second substrate 2.
Since the photoelectric conversion layer 22 covers the second substrate 2 and the fourth electrode 23 covers the second substrate 2, the photoelectric conversion layer 22 and the fourth electrode 23 can be directly coated and deposited without patterning in the manufacturing process.
In this embodiment, the material of the photoelectric conversion layer 22 is a visible light or infrared light sensitive material. In order to obtain high photoelectric conversion efficiency in the visible light or near infrared region, preferably, the material of the photoelectric conversion layer 22 may be an organic photosensitive material (OPD) or Copper Indium Gallium Selenide (CIGS). In the present embodiment, preferably, the light detection unit may include an infrared photoelectric sensor (IRSensor). Fig. 8 is a schematic diagram of photoelectric conversion Efficiency of the organic photosensitive material, fig. 9 is a schematic diagram of photoelectric conversion Efficiency of copper indium gallium selenide and a-Si, and as shown in fig. 8 and 9, an abscissa represents a Wavelength (wavelengh) of absorbed light, and an ordinate represents photoelectric conversion Efficiency (eq).
In this embodiment, preferably, the material of the first sub-electrode 321 is a transparent conductive material; the second sub-electrode 322 is a thin metal layer with a certain transmittance, and the material thereof is a metal material. Since the resistance of the thin metal layer is relatively large, the material of the first sub-electrode 321 is a transparent conductive material, which can reduce the overall resistance of the second electrode 32 to some extent.
In this embodiment, the material of the third electrode 29 is preferably a transparent conductive material or an opaque conductive material.
In this embodiment, the second sub-electrode 322 has a half-transmitting and half-reflecting function, light emitted from the organic light emitting layer 33 toward the light detecting unit is irradiated on the second sub-electrode 322, a part of the light is reflected by the second sub-electrode 322 to be emitted as display light, another part of the light directly passes through the second sub-electrode 322 to be irradiated on the fourth electrode 23, and is received and converted into an electrical signal by the photoelectric conversion layer 22, and further the driving current of the sub-pixel unit is adjusted in real time according to the electrical signal, so as to compensate the sub-pixel unit in real time, thereby improving the display state of the display device.
For other descriptions of the display panel provided in this embodiment, reference may be made to the second embodiment, which is not described herein again.
In the technical solution of the display panel provided in this embodiment, the light detection unit is disposed corresponding to the sub-pixel unit, and the light detection unit is configured to acquire a light signal emitted by the corresponding sub-pixel unit and convert the light signal into an electrical signal. The current actual light intensity of each sub-pixel unit, namely the change of the optical signal, is monitored in real time through the optical detection unit, so that the sub-pixel unit can be compensated in real time according to the current actual light intensity change of the sub-pixel unit, and the display state of the display device is improved.
A fourth embodiment of the present invention provides a display device, where the display device includes a display panel, and the display panel includes the display panel provided in the first embodiment, the second embodiment, or the third embodiment, and specific descriptions may refer to the first embodiment, the second embodiment, or the third embodiment, and are not repeated herein.
In the technical solution of the display device provided in this embodiment, the light detection unit is disposed corresponding to the sub-pixel unit, and the light detection unit is configured to acquire a light signal emitted by the corresponding sub-pixel unit and convert the light signal into an electrical signal. The current actual light intensity of each sub-pixel unit, namely the change of the optical signal, is monitored in real time through the optical detection unit, so that the sub-pixel unit can be compensated in real time according to the current actual light intensity change of the sub-pixel unit, and the display state of the display device is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The display panel is characterized by comprising a first substrate and a second substrate which are oppositely arranged, wherein a plurality of sub-pixel units are arranged on one side of the first substrate close to the second substrate, a plurality of light detection units are arranged on one side of the second substrate close to the first substrate, and the light detection units are arranged corresponding to the sub-pixel units;
the light detection unit is used for acquiring the optical signals sent by the corresponding sub-pixel units and converting the optical signals into electric signals.
2. The display panel according to claim 1, wherein a side of the light detecting unit away from the second substrate is provided with a light transmitting and reflecting structure for transmitting a part of the light signal emitted from the sub-pixel unit toward the light detecting unit and reflecting another part of the light signal.
3. The display panel according to claim 2, wherein the sub-pixel unit comprises a first electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode;
the light transmitting and reflecting structure comprises a light shielding layer, the light shielding layer is arranged between the light detection unit and the second electrode, and a plurality of opening areas corresponding to the sub-pixel units are arranged in the light shielding layer.
4. The display panel of claim 2, wherein the sub-pixel unit comprises a first electrode, a second electrode and an organic light emitting layer between the first electrode and the second electrode, the second electrode is capable of transmitting a portion of the light signal emitted by the sub-pixel unit towards the light detecting unit and reflecting another portion of the light signal, and the transflective structure comprises the second electrode.
5. The display panel according to claim 4, wherein the second electrode comprises a first sub-electrode and a second sub-electrode, the organic light emitting layer is located between the first sub-electrode and the first electrode, and the second sub-electrode is located on a side of the first sub-electrode away from the organic light emitting layer.
6. The display panel according to claim 5, wherein the material of the first sub-electrode is a transparent conductive material, and the material of the second sub-electrode is a metal material.
7. The display panel according to claim 1, wherein the light detection unit comprises a second thin film transistor, a third electrode, a fourth electrode, and a photoelectric conversion layer, the third electrode is connected to the second thin film transistor, and the photoelectric conversion layer is located between the third electrode and the fourth electrode.
8. The display panel according to claim 7, wherein a material of the photoelectric conversion layer is Si, an organic photosensitive material, or CIGS.
9. The display panel according to claim 7, wherein the photoelectric conversion layers are disposed in one-to-one correspondence with the sub-pixel units, and an orthogonal projection of the photoelectric conversion layer on the second substrate at least partially overlaps an orthogonal projection of the corresponding sub-pixel unit on the second substrate; or,
the photoelectric conversion layer is arranged corresponding to all the sub-pixel units, and the orthographic projection of the photoelectric conversion layer on the second substrate covers the orthographic projection of all the sub-pixel units on the second substrate.
10. A display device comprising the display panel according to any one of claims 1 to 9.
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