CN109346595A - A kind of staged thermoelectric generation film and its height of pin determine method - Google Patents
A kind of staged thermoelectric generation film and its height of pin determine method Download PDFInfo
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- CN109346595A CN109346595A CN201810960413.2A CN201810960413A CN109346595A CN 109346595 A CN109346595 A CN 109346595A CN 201810960413 A CN201810960413 A CN 201810960413A CN 109346595 A CN109346595 A CN 109346595A
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- 239000012530 fluid Substances 0.000 claims abstract description 55
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 12
- RDYMFSUJUZBWLH-UHFFFAOYSA-N endosulfan Chemical compound C12COS(=O)OCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl RDYMFSUJUZBWLH-UHFFFAOYSA-N 0.000 claims description 2
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- 238000004364 calculation method Methods 0.000 abstract 1
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- 238000005457 optimization Methods 0.000 abstract 1
- 238000004064 recycling Methods 0.000 description 6
- 230000005619 thermoelectricity Effects 0.000 description 4
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- 239000007789 gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 239000002440 industrial waste Substances 0.000 description 1
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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Abstract
Determine method the invention discloses a kind of staged thermoelectric generation film and its height of pin, staged thermoelectric generation film by the horizontal ceramic wafer in upper end, copper electrode piece, highly form along the increased PN junction pin of direction of heat flow ladder and lower end staged ceramic wafer；Since all PN junction pins of thermoelectric generation film are all connected in series, when hot fluid flows through thermoelectric generation film, temperature is constantly reduced along flow direction, so that the PN junction output off current HIGH of up direction exports electric current in the PN junction of down direction.In order to avoid the overall output electric current of thermoelectric generation film is limited by one of them the smallest PN junction output electric current, into a ladder by thermoelectric generation film design, the lower side of PN junction height of pin is located at the up direction of hot fluid, and the higher side of height of pin is then located at hot fluid down direction.Meanwhile the present invention provides a kind of PN junction pin in the height calculation method of different ladders, for designing optimal height of pin value, effect of optimization is obvious.
Description
Technical field
The invention belongs to heat to electricity conversion, thermoelectricity recycling, thermo-electric generation field, and in particular to a kind of staged thermoelectric generation film
And its height of pin determines that method, this method can be improved the overall output of thermoelectric generation film.
Background technique
In recent years, with the appearance of modern advanced material technology of preparing, such as nanotechnology, composite material, thermoelectric material
Transfer efficiency be substantially improved, attracted it is extensive researcher's note that and by thermoelectric generation technology be applied to thermoelectricity recycling field
(such as recycling of aerospace, waste heat of automotive exhaust gas, industrial waste heat recycling).
Thermoelectric generation film is the core generator unit in thermoelectricity recycling, it is made of upper and lower ends ceramic wafer, thermoelectric material
PN junction pin and connection pin between copper current-conducting piece three parts composition, the output performance of thermoelectric generation film directly affects thermoelectricity
The performance of recycling.There is scholar to improve the output voltage of PN junction, proposes for the PN junction of quadrangular cross section to be changed to hexagon cross
PN junction is designed to that variable cross-section is accumulated by the PN junction in section, these methods can improve the defeated of thermoelectric generation film to a certain extent
Voltage etc. out, but these structures generally have the characteristics that structure is complicated, production is difficult, it is difficult to realize engineer application.There are also
Person is using the topological connection relation of thermoelectric generation film as research object, in order not to allow the overall output of thermoelectric generator to be limited to wherein
One lesser thermoelectric generation film exports, and the mode of series-parallel Hybrid connections is taken between thermoelectric generation film.However, thermoelectric generation film
Internal PN junction number of pins is numerous, and between pin all by the way of being connected in series, when thermoelectric generation film is placed in hot end heat exchanger
When between cool end heat exchanger, the temperature difference between the two ends of thermoelectric generation film can constantly be reduced along hot fluid flow direction, cause heat
The PN junction output electric current of fluid down direction exports electric current lower than the PN junction of up direction, the string inside thermoelectric generation film between pin
Connection relationship can also make the overall output current limited of thermoelectric generation film in wherein the smallest PN junction output electric current.
Summary of the invention
It is an object of the invention to overcome thermoelectric generation film overall output electric current that can be limited to minimum PN junction output electric current
It influences, proposes that a kind of staged thermoelectric generation film and its height of pin determine method, increase PN along hot fluid flow direction ladder
The height of knot pin is consistent the output electric current of the PN junction pin on each ladder, to improve the entirety of thermoelectric generation film
Output.
The purpose of the present invention is achieved through the following technical solutions:
A kind of staged thermoelectric generation film, including the horizontal ceramic wafer in upper end, copper electrode piece, highly along direction of heat flow ladder increase
The contact surface of the PN junction pin and lower end staged ceramic wafer added, lower end ceramic wafer and copper electrode piece is ladder-like；The PN junction
After pin is connected in series with each other by copper electrode piece, it is clipped among the horizontal ceramic wafer in upper end and lower end staged ceramic wafer；The PN
It ties columns R of the pin on each ladder to be consistent, and the PN junction height of pin on same ladder is identical, on different ladders
PN junction height of pin is not identical, wherein R by thermoelectric generation film PN junction pin total columns RallIt is determined with step number n, it may be assumed thatAlong direction of heat flow, staged thermoelectric generation film be respectively the 1st ladder, the 2nd ladder ... the i-th ladder ..., n-th
Ladder, wherein the PN junction height of pin on the 1st ladder is minimum, the PN junction height of pin highest on n-th order ladder；I-th ladder draws
Foot height is hi, lower the i-th ladder of ceramic wafer height be hci, and the height h of upper ceramic waferc1With the height h of copper electrode piececoIt protects
Hold constant, hc1Equal to the height of lower the first ladder of ceramic wafer, meet following relationships: h between each heightc1+h1=hi+hci。
A kind of height of pin of staged thermoelectric generation film determines method, determines the hot-side temperature of the i-th ladder PN junction pin
And cold junction temperature, by PN junction pin hot-side temperature, cold junction temperature, the PN junction for calculating the i-th ladder exports electric current, to be calculated
The height of pin h of i-th ladderi。
Further, the detailed process of the hot-side temperature of the i-th ladder PN junction pin is determined are as follows:
Calculate the inner wall temperature T of hot end heat exchangeriwh；
Wherein, ChFor the specific heat capacity of hot fluid,For the mass flow of hot fluid, ThiFor the thermal fluid inlet of the i-th ladder
Temperature, Thi+1For the hot fluid outlet temperature of the i-th ladder, h1For hot fluid convection transfer rate, A1It exchanges heat for hot fluid and hot end
The inner wall contact area of device,For the hot fluid mean temperature of the i-th ladder, and
Calculate the hot-side temperature Th of PN junction pinleg；
Hot end heat flow density q1Are as follows:It is equal according to heat flow density, then
λ in formula1For the thermal conductivity of hot end heat exchanger material, δhFor hot end heat exchanger base plate thickness, λceFor the material thermal conductivity of ceramic wafer,
TowhFor hot end heat exchanger outside wall surface temperature；
The then hot-side temperature of PN junction pin
Further, the detailed process of the cold junction temperature of the i-th ladder PN junction pin is determined are as follows:
Calculate the inner wall temperature T of cool end heat exchangeriwc；
In formula, CwFor the specific heat capacity of cold fluid,For the mass flow of cold fluid, TciFor cold fluid inlet temperature,
Tci+1For cold fluid outlet temperature, h2For cold fluid convection transfer rate, A2For the inner wall face contact of cold fluid and cool end heat exchanger
Area,For the cold fluid mean temperature of the i-th ladder, and
Calculate the cold junction temperature Tc of PN junction pinleg；
Cold end heat flow density q2Are as follows:It is equal according to heat flow density, then
λ in formula2For the thermal conductivity of cool end heat exchanger material, δcFor cool end heat exchanger base plate thickness, TowcFor cool end heat exchanger outside wall surface temperature
Degree；hc1It is equal to the height of lower ceramic first ladder for the height of upper ceramic wafer.
The then cold junction temperature of PN junction pin
Further, the detailed process of the PN junction output electric current of the i-th ladder is calculated are as follows:
Calculate the PN junction output voltage U of the i-th ladderi；
Ui=R × m (αP-αN)×(Thleg-Tcleg)
In formula, m is the PN junction number that each column PN junction pin includes, αPFor the Seebeck coefficient of the pole P, αNFor the Sai Bei of the pole N
Gram coefficient；
Calculate the PN junction internal resistance R of the i-th ladderi；
In formula, ρPFor the resistivity of the pole P, ρNFor the resistivity of the pole N, AlegFor the cross-sectional area of PN junction pin.
Further, the PN junction for calculating the i-th ladder exports electric current Ii:
Further, as i=1, h1It is known that acquiringWork as i=2,3 ...,
When n, hiIt is unknown, according to Ii=I1It can solve to obtain, i.e.,
The invention has the benefit that
Thermoelectric generation film of the present invention designs lower end ceramic wafer into a ladder, and PN junction height of pin is flowed along hot fluid
Direction ladder increases, and provides a kind of height of pin and determine method, so that the PN junction in staged thermoelectric generation film on each ladder
Pin output electric current is identical, and the performance of thermoelectric generation film can be substantially improved.
Detailed description of the invention
Fig. 1 is staged thermoelectric generation film structural schematic diagram；
Fig. 2 is staged thermoelectric generation film main view and its operation principle schematic diagram；
Fig. 3 is the related parameter of the i-th ladder of staged thermoelectric generation film.
Specific embodiment
Below with reference to a specific staged thermo-electric generation chip architecture, to illustrate technical solution of the present invention.
As shown in Figure 1, staged thermoelectric generation film includes the horizontal ceramic wafer in upper end, copper electrode piece, highly along direction of heat flow
The contact surface of the increased PN junction pin of ladder and lower end staged ceramic wafer, lower end ceramic wafer and copper electrode piece is designed to ladder
Shape, for placing PN junction pin；The PN junction pin is connected in series with each other by copper electrode piece, is clipped in the horizontal ceramic wafer in upper end under
It holds among staged ceramic wafer；Columns R of the PN junction pin on each ladder is consistent, and the PN junction on same ladder
Height of pin is identical, and the PN junction height of pin on different ladders is not identical, wherein R by thermoelectric generation film PN junction pin total column
Number RallIt is determined with step number n, it may be assumed that
Along hot fluid flow direction, staged thermoelectric generation film be respectively the 1st ladder, the 2nd ladder ... the i-th ladder ...,
N ladder, wherein the PN junction height of pin on the 1st ladder is minimum, the PN junction height of pin highest on n-th order ladder；I-th (i=1,
2 ... ..., n) ladder height of pin be hi, the i-th ladder lower ceramic wafer height be hci, in addition, the height h of upper ceramic waferc1
The height h of (equal to the height of lower the first ladder of ceramic wafer) and copper electrode piececoIt remains constant, following passes is met between each height
System:
hc1+h1=hi+hci (2)
The hot fluid mean temperature of i-th ladder isHot end heat exchanger inner wall temperature is
Tiwh, hot end heat exchanger outside wall surface temperature be Towh, PN junction pin hot-side temperature be Thleg, PN junction pin cold junction temperature be Tcleg、
The outside wall surface temperature of cool end heat exchanger is Towc, cool end heat exchanger inner wall temperature be Tiwc, cold fluid mean temperature be
Implementation steps are as follows:
The premise that the present invention realizes is: (1) ignoring hot end heat exchanger, the cool end heat exchanger heat of the contact between thermoelectric generation film
Resistance；The hot fluid inlet temperature Th of (2) i-th (i=1,2 ... ..., n) laddersi, hot fluid outlet temperature Thi+1With cold fluid
Inlet temperature Tci, cold fluid outlet temperature Tci+1It is known；(3) mass flow of hot fluidSpecific heat capacity ChWith heat convection system
Number h1And the mass flow of cold fluidSpecific heat capacity CwWith convection transfer rate h2It is known.
Step 1, the hot-side temperature of the i-th ladder PN junction pin is determined；
(1) it is equal to the quantity of heat convection of hot fluid and hot end heat exchanger inner wall, meter by the reduction of energy in the hot fluid of hot end
Calculate the inner wall temperature T of hot end heat exchangeriwh；
In formula, A1For the inner wall contact area of the i-th ladder hot fluid and hot end heat exchanger；
(2) when the heat known to Fourier law is transferred to PN junction pin from hot end heat exchanger inner wall, heat flow density
It remains unchanged, and calculates the hot-side temperature Th of PN junction pin accordinglyleg；
The heat flow density q1Are as follows:
It is equal according to heat flow density, have:
In formula, λ1For the thermal conductivity of hot end heat exchanger material, λceFor the material thermal conductivity of ceramic wafer, δhFor hot end heat exchanger
Base plate thickness；
Since the thermal conductivity of copper electrode piece is high, thickness is small, therefore the thermal conduction resistance of copper electrode piece is ignored, therefore by formula
(3), the hot-side temperature Th of PN junction pin can be calculated in (4), (5)leg, it may be assumed that
Step 2, the cold junction temperature of the i-th ladder PN junction pin is determined；
(1) it is equal to the quantity of heat convection of cold fluid and cool end heat exchanger inner wall, meter by the increase of energy in cold end cold fluid
Calculate the inner wall temperature T of cool end heat exchangeriwc；
In formula, A2For the inner wall contact area of the i-th ladder cold fluid and cool end heat exchanger；
(2) when the heat known to Fourier law is transferred to cool end heat exchanger inner wall from PN junction pin, heat flow density
It remains unchanged, and calculates the cold junction temperature Tc of PN junction pin accordinglyleg；
Cold end heat flow density q2Are as follows:
It is equal according to heat flow density, have:
In formula, λ2For the thermal conductivity of cool end heat exchanger material, δcFor cool end heat exchanger base plate thickness；
By formula (7), (8), (9 can be calculated the cold junction temperature Tc of PN junction pinleg, it may be assumed that
Step 3, according to step 1 gained PN junction pin hot-side temperature Thleg, step 2 gained PN junction pin cold junction temperature
Tcleg, calculate the PN junction output electric current of the i-th ladder；
(1) the PN junction output voltage U of the i-th ladder is calculatedi；
Ui=R × m (αP-αN)×(Thleg-Tcleg) (11)
In formula, m is the PN junction number that each column PN junction pin includes, αPFor the Seebeck coefficient of the pole P, αNFor the Sai Bei of the pole N
Gram coefficient；
(2) the PN junction internal resistance R of the i-th ladder is calculatedi；
In formula, ρPFor the resistivity of the pole P, ρNFor the resistivity of the pole N, AlegFor the cross-sectional area of PN junction pin；
(3) PN junction for calculating the i-th ladder exports electric current Ii；
The height of pin h of known 1st ladder1With ceramic wafer height hc1, exported by the electric current that formula (13) calculate the 1st ladderOutput electric current (the I of the 1st ladder is equal to by the output electric current of the i-th ladder againi=
I1), the height of pin of the i-th ladder is calculatedSo that the PN of each ladder
Knot output electric current is consistent, and improves the overall output of thermoelectric generation film.
This example uses more typical thermo-electric generation chip size, and ceramic wafer is having a size of 40mm*40mm (long * wide), PN junction
Pin shares 8 column, and it is each show 8 PN junction thermocouples (i.e. 4 PN junctions, first row and last column due to reserve one
Positive and negative anodes interface, thermocouple number are only 7), step number R=4 then shares 2 column PN junction pins on each ladder.PN junction heat
The parameters such as Seebeck coefficient, the resistivity of galvanic couple are as shown in table 1.
1 PN junction thermocouple plug seebeck coefficient of table and resistivity
Note: T is the average value of PN junction pin hot and cold side temperature, i.e. T=(Th in tableleg+Tcleg)/2
The known dimensions parameter of thermoelectric generation film, such as first row ceramic wafer height, height of pin, the height of copper electrode piece,
The thickness δ of hot end heat exchangerh, the thickness δ of cool end heat exchangercAnd the phase of cold fluid (high-temperature tail gas), hot fluid (cooling water)
It is as shown in table 2 to close parameter.
2 thermoelectric generation film known parameters of table and hot and cold side relevant parameter
Assuming that hot fluid inlet temperature is 771K, the decline of i+1 step temperature 0.5K, i.e. Th are flow to from the i-th ladderi-
Thi+1=0.5, cold fluid inlet temperature 365K flow to i+1 step temperature from the i-th ladder and increase 0.1K, i.e. Tci+1-
Tci=0.1.
The PN junction pin hot and cold side temperature and hot end heat exchanger outside wall surface temperature of each ladder are calculated by above-mentioned known parameters
Degree is as shown in table 3.
Each ladder PN junction pin hot-side temperature of table 3 and cold junction temperature
Therefore, the pole the P Seebeck coefficient of the 1st ladder is 83.4066 μ v/K, and the Seebeck coefficient of the pole N is -95.8313 μ v/
The resistivity of the pole K, P is 2.3554 × 10-5The resistivity of the pole Ω m, N is 2.3676 × 10-5Ω m is calculated by formula (13)
The electric current output of first ladder is I1=2.27A, therefore it is 2.27A that the output electric current of the i-th ladder, which also obtains, calculates work by matlab
Tool acquires: the 2nd, the PN junction height of pin of 3,4 ladders is respectively 1.608mm, 1.616mm, 1.624mm.
Specific embodiment is described in detail in technical solution according to the present invention above.Exist according to the technique and scheme of the present invention
It does not change under connotation of the invention, those of ordinary skill in the art can propose the various structures mode that can be replaced mutually
And implementation.Therefore, above-described specific embodiment and attached drawing are only the examples to technical solution of the present invention
Property explanation, and be not to be construed as whole of the invention or be considered as to define or limit technical solution of the present invention.
Claims (9)
1. a kind of staged thermoelectric generation film, which is characterized in that including the horizontal ceramic wafer in upper end, copper electrode piece, highly along hot-fluid
The increased PN junction pin of direction ladder and lower end staged ceramic wafer, the PN junction pin are connected in series with each other by copper electrode piece
Afterwards, it is clipped among the horizontal ceramic wafer in upper end and lower end staged ceramic wafer, the contact surface of lower end ceramic wafer and copper electrode piece is rank
Scalariform.
2. a kind of staged thermoelectric generation film according to claim 1, which is characterized in that the PN junction pin is in every single order
Columns R on ladder is consistent, and the PN junction height of pin on same ladder is identical, and the PN junction height of pin on different ladders is not
It is identical, wherein R by thermoelectric generation film PN junction pin total columns RallIt is determined with step number n, it may be assumed that
3. a kind of staged thermoelectric generation film according to claim 1, which is characterized in that along direction of heat flow, staged temperature
Poor power generation sheet be respectively the 1st ladder, the 2nd ladder ... the i-th ladder ..., n-th order ladder, wherein the PN junction pin on the 1st ladder is high
Spend minimum PN junction height of pin highest on n-th order ladder；The height of pin of i-th ladder is hi, lower the i-th ladder of ceramic wafer height
Degree is hci, and the height h of upper ceramic waferc1With the height h of copper electrode piececoIt remains unchanged, hc1Equal to lower the first ladder of ceramic wafer
Highly, meet following relationships: h between each heightc1+h1=hi+hci。
4. a kind of height of pin of staged thermoelectric generation film determines method, which is characterized in that determine the i-th ladder PN junction pin
Hot-side temperature and cold junction temperature, by PN junction pin hot-side temperature, cold junction temperature, the PN junction for calculating the i-th ladder exports electric current, thus
The height of pin h of the i-th ladder is calculatedi。
5. a kind of height of pin of staged thermoelectric generation film according to claim 4 determines method, which is characterized in that really
The detailed process of the hot-side temperature of fixed i-th ladder PN junction pin are as follows:
Calculate the inner wall temperature T of hot end heat exchangeriwh；
Wherein, ChFor the specific heat capacity of hot fluid,For the mass flow of hot fluid, ThiFor the i-th ladder hot fluid inlet temperature,
Thi+1For the hot fluid outlet temperature of the i-th ladder, h1For hot fluid convection transfer rate, A1For hot fluid and hot end heat exchanger
Inner wall contact area,For the hot fluid mean temperature of the i-th ladder, and
Calculate the hot-side temperature Th of PN junction pinleg；
Hot end heat flow density q1Are as follows:It is equal according to heat flow density, thenλ in formula1For the thermal conductivity of hot end heat exchanger material, δhIt is thick for hot end heat exchanger bottom plate
Degree, λceFor the material thermal conductivity of ceramic wafer, TowhFor hot end heat exchanger outside wall surface temperature；
The then hot-side temperature of PN junction pin
6. a kind of height of pin of staged thermoelectric generation film according to claim 5 determines method, which is characterized in that really
The detailed process of the cold junction temperature of fixed i-th ladder PN junction pin are as follows:
Calculate the inner wall temperature T of cool end heat exchangeriwc；
In formula, CwFor the specific heat capacity of cold fluid,For the mass flow of cold fluid, TciInlet temperature, Tc for cold fluidi+1For
Cold fluid outlet temperature, h2For cold fluid convection transfer rate, A2For the inner wall contact area of cold fluid and cool end heat exchanger,For the cold fluid mean temperature of the i-th ladder, and
Calculate the cold junction temperature Tc of PN junction pinleg；
Cold end heat flow density q2Are as follows:It is equal according to heat flow density, thenλ in formula2For the thermal conductivity of cool end heat exchanger material, δcFor cool end heat exchanger bottom plate
Thickness, TowcFor cool end heat exchanger outside wall surface temperature；hc1It is equal to the height of lower ceramic first ladder for the height of upper ceramic wafer.
The then cold junction temperature of PN junction pin
7. a kind of height of pin of staged thermoelectric generation film according to claim 5 or 6 determines that method, feature exist
In the PN junction for calculating the i-th ladder exports the detailed process of electric current are as follows:
Calculate the PN junction output voltage U of the i-th ladderi；
Ui=R × m (αP-αN)×(Thleg-Tcleg)
In formula, m is the PN junction number that each column PN junction pin includes, αPFor the Seebeck coefficient of the pole P, αNFor the Seebeck system of the pole N
Number；
Calculate the PN junction internal resistance R of the i-th ladderi；
In formula, ρPFor the resistivity of the pole P, ρNFor the resistivity of the pole N, AlegFor the cross-sectional area of PN junction pin.
8. a kind of height of pin of staged thermoelectric generation film according to claim 7 determines method, which is characterized in that meter
Calculate the PN junction output electric current I of the i-th ladderi:
9. the height of pin of according to claim 8 kind of staged thermoelectric generation film determines method, which is characterized in that work as i
When=1, h1It is known that acquiringWork as i=2, when 3 ..., n, hiIt is unknown, according to Ii=I1
It can solve to obtain, i.e.,
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| CN111081681A (en) * | 2019-12-31 | 2020-04-28 | 长江存储科技有限责任公司 | Electromigration test structure and forming method thereof |
| CN111081681B (en) * | 2019-12-31 | 2021-07-20 | 长江存储科技有限责任公司 | Electromigration test structure and forming method thereof |
| CN113280527A (en) * | 2021-07-01 | 2021-08-20 | 哈尔滨商业大学 | Heat exchange device special for semiconductor refrigeration equipment |
| CN113280527B (en) * | 2021-07-01 | 2022-07-15 | 哈尔滨商业大学 | Heat exchange device special for semiconductor refrigeration equipment |
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