CN109344419B - Transient sectional analysis model for IGBT and PIN diode commutation units - Google Patents
Transient sectional analysis model for IGBT and PIN diode commutation units Download PDFInfo
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Abstract
The invention discloses a transient sectional analysis model for a commutation unit formed by an IGBT (insulated gate bipolar transistor) and a PIN (positive-intrinsic-negative) diode, which is used for segmenting the transient process of the commutation unit and modeling an insulated gate bipolar transistor and a freewheeling diode by utilizing the combination of a time-varying voltage source and a current source at different stages, so that the reduced decoupling of a complex physical mechanism in the transient process is realized, the convergence and the operation speed of the model are greatly improved, and all parameters of the model can be obtained from a data manual. The transient sectional analysis model provided by the invention is directly used for modeling a converter unit, realizes transient mechanism decoupling by using reasonable hypothesis, greatly improves the model resolving efficiency on the premise of ensuring the precision, and is particularly suitable for simulation analysis of a complex power electronic conversion system formed by multiple devices.
Description
Technical Field
The invention relates to the technical field of power semiconductor devices, in particular to a transient sectional analysis model for IGBT and PIN diode commutation units.
Background
Insulated Gate Bipolar Transistors (IGBTs) are power switching devices that are currently widely used in power electronic devices. To ensure reverse freewheeling capability, the IGBT is often connected in parallel with a PIN diode. In a power electronic converter, an IGBT and a pair tube PIN diode form a group of basic current conversion units to complete the basic function of energy conversion.
Power switching devices such as IGBTs and PIN diodes are often considered ideal switches during simulation, analysis and design of power electronics. This idealized modeling does not reflect the switching characteristics of the device, such as switching delay, switching losses, switching voltage current spikes, etc., and it is therefore necessary to model switching transients.
At present, the conventional switching transient model is generally difficult to achieve both model accuracy and calculation efficiency, and is difficult to be used in a complex conversion device containing many devices. For example, mechanistic models are modeled for semiconductor physical mechanisms, typically in the form of complex differential equations and equivalent circuits, such as the Hefner IGBT model. The model has high accuracy, but the resolving speed is slow, the convergence is not always realized, and the semiconductor physical parameters are difficult to obtain. The behavior model does not usually consider the internal physical mechanism of the device and directly models the external characteristics of the device, but the method often cannot meet the precision requirement and sometimes does not consider the change of parameters under different working conditions. In addition, most behavioral models, such as the igbt1 model in Saber simulation software, also model devices using equivalent circuits. Such modeling methods also face convergence and simulation speed issues.
Therefore, a transient sectional analysis model aiming at the IGBT and PIN diode commutation units is expected to solve the problem that the conventional device model in the prior art cannot give consideration to both the simulation precision and the simulation efficiency.
Disclosure of Invention
The invention discloses a transient sectional analysis model aiming at IGBT and PIN diode commutation units, which is determined by the following steps:
step 1: extracting transient sectional analysis model parameters according to chart information of a data manual;
step 2: extracting a parameter temperature correction coefficient of the transient segmental analysis model according to chart information containing a temperature coefficient in a data manual;
and step 3: determining the stage division and the transient stage analysis model mode of the transient process of the switching-on and switching-off of the commutation unit, dividing the switching-on and switching-off transient process into different stages according to different physical mechanisms of the switching-on and switching-off transient process, and modeling the commutation unit by using one of a current source-voltage source mode or a voltage source-current source mode in the transient stage analysis model in each stage, wherein the current source-voltage source mode models the insulated gate bipolar transistor as a current source and the PIN diode as a voltage source, and the voltage source-current source mode models the insulated gate bipolar transistor as a voltage source and the PIN diode as a current source;
and 4, step 4: determining expressions of voltage sources and current sources of each stage of the transient process of switching on of the current conversion unit in the step 3;
and 5: and (3) determining expressions of the voltage source and the current source in each stage of the transient switching-off process of the commutation unit in the step (3).
Preferably, the parameters of the transient segmentation analysis model in step 1 include: the method comprises the following steps of obtaining MOS gate threshold voltage, insulated gate bipolar transistor equivalent transconductance, insulated gate bipolar transistor equivalent capacitance parameters and PIN diode reverse recovery parameters;
(1) according to MOS gate threshold voltage V in data manual T Extracting the MOS gate threshold voltage;
(2) extracting the equivalent transconductance of the insulated gate bipolar transistor according to the following formula:
i c ＝K(v ge -V T ) 2
wherein i c Is the collector current of the insulated gate bipolar transistor, K is the equivalent transconductance of the insulated gate bipolar transistor, v ge The gate voltage of the insulated gate bipolar transistor is obtained, the upper formula is fitted by utilizing a transfer characteristic curve in a data manual, and the equivalent transconductance K of the insulated gate bipolar transistor is determined;
(3) extracting the equivalent capacitance parameter of the insulated gate bipolar transistor according to the following formula:
wherein, C gc Is the equivalent capacitance of the gate electrode and the collector electrode of the insulated gate bipolar transistor, lambda is the capacitance coefficient of the insulated gate bipolar transistor, v ce Is the collector-emitter voltage, V, of an insulated gate bipolar transistor lim Is the voltage at the switching point of the capacitor, C oxd Is oxide capacitance, and the capacitance curve in the data manual is used to fit the above formula to determine the parameters lambda and V lim And C oxd A value of (d);
(4) extracting a PIN diode reverse recovery parameter according to the following formula:
I rr ＝AI D B
t rr ＝CI D D
wherein, I rr Is the reverse recovery current of the PIN diode, t rr The inverse recovery time of the PIN diode is used, A, B, C and D are coefficients, the inverse recovery curve in the data manual is used for fitting the above formula, and the values of the parameters A, B, C and D are determined.
Preferably, the step 2 of extracting the transient segmentation analysis model parameter temperature correction coefficient specifically includes:
step 2.1: determining a threshold voltage temperature correction factor according to the following equation:
V T (T j )＝V T (T 0 )-α(T j -T 0 )
wherein, V T Is MOS gate threshold voltage, T j Is junction temperature, T 0 The method comprises the steps that a data manual is used for testing temperature, alpha is a threshold voltage temperature correction coefficient of an MOS gate electrode, and the data manual is used for fitting to determine an alpha value;
step 2.2: determining the equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
wherein beta is an equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor, and a data manual is utilized to perform fitting to determine a beta value;
step 2.3: determining a PIN diode reverse recovery charge temperature correction coefficient according to the following formula:
wherein Q is rr The method comprises the steps that reverse recovery charge of a PIN diode is obtained, gamma is a temperature correction coefficient of the reverse recovery charge of the PIN diode, and a data manual is used for fitting to determine the value of gamma;
step 2.4: determining a PIN diode reverse recovery time temperature correction coefficient according to the following formula:
wherein, t rr The temperature correction coefficient is the reverse recovery time of the PIN diode, eta is the temperature correction coefficient of the reverse recovery time of the PIN diode, and a data manual is used for fitting to determine the value of eta;
step 2.5: determining the on-state voltage drop temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
V sat (T j )＝V sat (T 0 )+κ(T j -T 0 )
wherein, V sat And k is the on-state voltage drop of the insulated gate bipolar transistor, and the value of k is determined by fitting through a data manual, wherein k is the temperature correction coefficient of the on-state voltage drop of the insulated gate bipolar transistor.
Preferably, the transient switching-on process in step 3 is divided into six stages; stage 1 is that the transient process starts until the collector current starts to rise, stage 2 is that the collector current starts to rise until the collector current rises to the load current, stage 3 is that the collector current rises to the load current until the collector current rises to the maximum, stage 4 is that the collector current rises to the maximum until the collector current falls to the load current, stage 5 is that the collector current falls to the load current until the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point, stage 6 is that the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point until the tube voltage drop falls to the on-state voltage drop; wherein phases 1, 2 and 3 are modeled using the current source-voltage source mode and phases 4, 5 and 6 are modeled using the voltage source-current source mode.
Preferably, the turn-off transient process in step 3 is divided into six stages; stage 1 is the transient process starting until the tube drop starts to rise, stage 2 is the tube drop starts to rise until the tube drop rises to the sum of the miller level and the capacitance transition point voltage, stage 3 is the tube drop rises to the sum of the miller level and the capacitance transition point voltage until the tube drop rises to the dc bus voltage, stage 4 is the tube drop rises to the dc bus voltage until half of the collector current drops rapidly, stage 5 is the collector current drops rapidly half of the collector current until the collector current drops to the trailing current, stage 6 is the collector current drops to the trailing current until the collector current drops to zero; wherein phases 1, 2 and 3 are modeled using the voltage source-current source mode and phases 4, 5 and 6 are modeled using the current source-voltage source mode.
Preferably, the step 4 determines the expressions of the voltage and the current source at the transient process stage of switching on the six commutation units in the step 3, if a current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source, and the current expression is represented as i c PIN diode is modeled as a voltage source, and the voltage expression is denoted v D (ii) a If a voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source, and the voltage expression is recorded as v ce (ii) a The PIN diode is modeled as a current source, and the current is recorded as i D ；
Step 4.1: switching on transient process stage 1, i.e. [ t ] 0 ,t 1 ]Using a current source-voltage source model, the IGBT is modeled as a current source, i c =0; modeling of PIN diodes as Voltage Source, v D =0; duration of time
Wherein t is don Is the on delay time; tau. 1 Is a time constant expressed as tau 1 ＝(C ge +C gc )(R Gon +R Gint )，R Gon Is the gate turn-on resistance, R Gint Is the gate internal resistance; v Gon Is the drive turn-on voltage, V Goff Is the drive off voltage;
and 4.2: switching on transient process phase 2, i.e. [ t ] 1 ，t 2 ]Modeling an insulated gate bipolar transistor as a current source, i, using a current source-voltage source mode c ＝K(v ge -V T ) 2 (ii) a Modeling of PIN diodes as Voltage Source, v D =0; duration of time
Wherein t is r Is the rise time, V ml Is a MillerLevel, expression is V ml ＝v ge (t 2 )＝v ge (i c ＝I L )，I L Is the load current, v ge Is expressed as
Step 4.3: opening transient process stage 3, i.e. [ t ] 2 ，t 3 ]Using a current source-voltage source model, the IGBT is modeled as a current source, i c ＝K(v ge -V T ) 2 (ii) a Modeling of PIN diodes as Voltage Source, v D =0; duration of time
Wherein V gerr Is the peak of the gate voltage during the reverse recovery process, expressed as
v ge Is expressed as
Step 4.4: opening transient process stage 4, i.e. [ t ] 3 ，t 4 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i gon Is the gate charging current in the turn-on process, expressed as
The PIN diode is modeled as a current source,
duration according to t 4 -t 2 ＝t rr Determining;
step 4.5: switching on transient process phase 5, i.e. [ t ] 4 ，t 5 ]In a voltage source-current source modeEdge gate bipolar transistors are modeled as voltage sources,
same as stage 4; modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining;
step 4.6: opening transient process phase 6, i.e. [ t ] 5 ，t 6 ]Modeling an insulated gate bipolar transistor as a voltage source, v, using a voltage source-current source mode ce ＝V lim +V ml -i gon (t-t 5 )/C oxd (ii) a Modeling of PIN diodes as current sources, i D =0; duration according to t 6 ＝t(v ce ＝V sat )＝t 5 +C oxd (V lim +V ml -V sat )/i gon And (4) determining.
Preferably, the step 5 determines the expressions of the voltage and the current source at each stage of the turn-off transient process of the commutation unit in the step 3, if a current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source, and the current expression is represented as i c Modeling a PIN diode as a voltage source, and expressing the voltage as v D (ii) a If a voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source, and the voltage expression is recorded as v ce (ii) a The PIN diode is modeled as a current source, and the current is recorded as i D ；
Step 5.1: off transient phase 1, i.e. [ t ] 7 ，t 8 ]Modeling an insulated gate bipolar transistor as a voltage source, v, using a current source-voltage source model ce ＝V sat (ii) a Modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining where t doff Is the turn-off delay time; tau is 2 Is a time constant expressed as τ 2 ＝(C ge +C gc )(R Goff +R Gint )，R Goff Is a gate turn-off resistance;
step 5.2: turn-off transient phase 2, i.e. [ t ] 8 ，t 9 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i goff Is the gate discharge current during turn-off, expressed as
Modeling of a PIN diode as a current source, i D =0; duration according to t 9 -t 8 ＝(V lim +V ml -V sat )C oxd /i goff Determining;
step 5.3: off transient phase 3, i.e. [ t ] 9 ，t 10 ]In a voltage source-current source mode, an insulated gate bipolar transistor is modeled as a voltage source,
modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining;
step 5.4: turn-off transient phase 4, i.e. [ t ] 10 ,t 11 ]In a current source-voltage source mode, the insulated gate bipolar transistor is modeled as a current source,
wherein
Is the maximum rate of change of current in the turn-off process, and has the expression
t fast Is the current fast-falling stageDuration, t tail Is the duration of the trailing phase of the current, I tail Is the trailing current; modeling of a PIN diode as a Voltage Source, v D =0; duration according to t 11 -t 10 ＝t fast Determining;
step 5.5: off transient phase 5, [ t ] 11 ,t 12 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of PIN diodes as Voltage Source, v D =0; duration according to t 12 -t 11 ＝t fast Determining;
step 5.6: turn-off transient phase 6, i.e. [ t ] 12 ,t 13 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of PIN diodes as Voltage Source, v D =0; duration according to t 13 -t 12 ＝t tail And (4) determining.
The invention discloses a transient sectional analysis model for IGBT and PIN diode commutation units, which is used for segmenting the transient process of the commutation units and modeling an insulated gate bipolar transistor and a freewheeling diode by utilizing the combination of a time-varying voltage source and a current source at different stages, thereby realizing the reduced decoupling of a complex physical mechanism in the transient process, greatly improving the convergence and the operation speed of the model and simultaneously obtaining all parameters from a data manual.
Drawings
FIG. 1 is a schematic diagram of the extraction of transient segmentation analysis model parameters of the present invention from a data sheet curve.
FIG. 2 is a schematic diagram of two modes of the transient segmentation analysis model of the present invention.
FIG. 3 is a schematic diagram of the transient process segment of the transient segment analysis model switching on and off according to the present invention.
Fig. 4 is a schematic diagram of an equivalent circuit considered in modeling the transient segmentation analysis model of the present invention.
FIG. 5 is a comparison graph of simulation results of transient process of transient segmentation analysis model opening and experimental waveforms of the present invention.
Fig. 6 is a comparison graph of the simulation result of the transient process of the transient segmentation analysis model shutdown and the experimental waveform.
Detailed Description
In order to make the implementation objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be described in more detail below with reference to the accompanying drawings in the embodiments of the present invention. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The described embodiments are only some, but not all embodiments of the invention. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A transient segment analysis model for IGBT and PIN diode commutation cells, the transient segment analysis model determined by:
step 1: and extracting transient sectional analysis model parameters according to the chart information of the data manual.
The transient segmentation analysis model parameters in the step 1 comprise: the method comprises the following steps of (1) obtaining MOS gate threshold voltage, insulated gate bipolar transistor equivalent transconductance, insulated gate bipolar transistor equivalent capacitance parameters and PIN diode reverse recovery parameters;
(1) according to MOS gate threshold voltage V in data manual T Extracting the threshold voltage of the MOS gate electrode;
(2) as shown in fig. 1, the equivalent transconductance of the igbt is extracted according to the following formula:
i c ＝K(v ge -V T ) 2
wherein i c Is the collector current of the insulated gate bipolar transistor, K is the equivalent transconductance of the insulated gate bipolar transistor, v ge The gate voltage of the insulated gate bipolar transistor is obtained, the above formula is fitted by utilizing a transfer characteristic curve in a data manual, and the equivalent transconductance K of the insulated gate bipolar transistor is determined, as shown in figure 1 (a);
(3) extracting the equivalent capacitance parameter of the insulated gate bipolar transistor according to the following formula:
wherein, C gc Is the equivalent capacitance of the gate electrode and the collector electrode of the insulated gate bipolar transistor, lambda is the capacitance coefficient of the insulated gate bipolar transistor, v ce Is the collector-emitter voltage, V, of an insulated gate bipolar transistor lim Is the voltage at the point of capacitance transition, C oxd Is oxide capacitance, and the capacitance curve in the data manual is used to fit the above formula to determine the parameters lambda and V lim And C oxd The value of (c) as shown in FIG. 1 (b);
(4) extracting a PIN diode reverse recovery parameter according to the following formula:
I rr ＝AI D B
t rr ＝CI D D
wherein, I rr Is the reverse recovery current of the PIN diode, t rr The PIN diode reverse recovery time, a, B, C, and D are coefficients, and the above formula is fitted using the reverse recovery curve in the data manual to determine the values of the parameters a, B, C, and D, as shown in fig. 1 (C).
Step 2: and extracting the temperature correction coefficient of the transient segmental analysis model parameter according to the chart information containing the temperature coefficient in the data manual.
The step 2 of extracting the temperature correction coefficient of the transient sectional analysis model parameter comprises the following specific steps:
step 2.1: determining a threshold voltage temperature correction factor according to the following formula:
V T (T j )＝V T (T 0 )-α(T j -T 0 )
wherein, V T Is MOS gate threshold voltage, T j Is junction temperature, T 0 The method comprises the steps that a data manual is used for testing temperature, alpha is a threshold voltage temperature correction coefficient of an MOS gate electrode, and the data manual is used for fitting to determine an alpha value;
step 2.2: determining the equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
wherein beta is an equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor, and a data manual is utilized to perform fitting to determine a beta value;
step 2.3: determining a PIN diode reverse recovery charge temperature correction factor according to the following formula:
wherein Q is rr The method comprises the steps that reverse recovery charge of a PIN diode is obtained, gamma is a temperature correction coefficient of the reverse recovery charge of the PIN diode, and a data manual is used for fitting to determine the value of gamma;
step 2.4: determining the temperature correction coefficient of the reverse recovery time of the PIN diode according to the following formula:
wherein, t rr The temperature correction coefficient is the reverse recovery time of the PIN diode, eta is the temperature correction coefficient of the reverse recovery time of the PIN diode, and a data manual is used for fitting to determine the value of eta;
step 2.5: determining the on-state voltage drop temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
V sat (T j )＝V sat (T 0 )+κ(T j -T 0 )
wherein, V sat And k is the on-state voltage drop of the insulated gate bipolar transistor, and the value of k is determined by fitting through a data manual, wherein k is the temperature correction coefficient of the on-state voltage drop of the insulated gate bipolar transistor.
And step 3: determining the stage division and the transient sectional analysis model mode of the transient process of switching on and switching off of the commutation unit, dividing the transient process of switching on and switching off into different stages according to different physical mechanisms of the transient process of switching on and switching off, and modeling the commutation unit by using one of a current source-voltage source mode or a voltage source-current source mode in the transient sectional analysis model in each stage, wherein as shown in fig. 2, the current source-voltage source mode models the insulated gate bipolar transistor as a current source, the PIN diode as a voltage source, and the voltage source-current source mode models the insulated gate bipolar transistor as a voltage source and the PIN diode as a current source.
As shown in fig. 3 (a), the switching-on transient process in step 3 is divided into six stages; stage 1 is that the transient process starts until the collector current starts to rise, stage 2 is that the collector current starts to rise until the collector current rises to the load current, stage 3 is that the collector current rises to the load current until the collector current rises to the maximum, stage 4 is that the collector current rises to the maximum until the collector current falls to the load current, stage 5 is that the collector current falls to the load current until the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point, stage 6 is that the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point until the tube voltage drop falls to the on-state voltage drop; wherein phases 1, 2 and 3 are modeled using the current source-voltage source mode and phases 4, 5 and 6 are modeled using the voltage source-current source mode.
As shown in fig. 3 (b), the turn-off transient in step 3 is divided into six stages; stage 1 is that the transient process starts until the tube voltage drop starts to rise, stage 2 is that the tube voltage drop starts to rise until the tube voltage drop rises to the sum of the miller level and the voltage of the capacitance transition point, stage 3 is that the tube voltage drop rises to the sum of the miller level and the voltage of the capacitance transition point until the tube voltage drop rises to the voltage of the direct current bus, stage 4 is that the tube voltage drop rises to the voltage of the direct current bus until half of the rapid falling process of the collector current, stage 5 is that the collector current falls to half of the rapid falling process until the collector current falls to the trailing current, stage 6 is that the collector current falls to the trailing current until the collector current falls to zero; wherein phases 1, 2 and 3 are modeled using the voltage source-current source mode and phases 4, 5 and 6 are modeled using the current source-voltage source mode.
And 4, step 4: and 3, determining expressions of the voltage and the current source of each stage of the switching-on transient process of the commutation unit in the step 3.
Step 4.1: opening transient process stage 1, i.e. [ t ] 0 ，t 1 ]Modeling an insulated gate bipolar transistor as a current source, i, using a current source-voltage source mode c =0; modeling of a PIN diode as a Voltage Source, v D =0; duration of time
Wherein t is don Is the on delay time; tau is 1 Is a time constant expressed as tau 1 ＝(C ge +C gc )(R Gon +R Gint )，R Gon Is the gate turn-on resistance, R Gint Is the gate internal resistance; v Gon Is the driving on voltage, V Goff Is the drive turn-off voltage, the meaning of the circuit parameters is shown in fig. 4;
and 4.2: opening transient process stage 2, i.e. [ t ] 1 ，t 2 ]Using a current source-voltage source model, the IGBT is modeled as a current source, i c ＝K(v ge -V T ) 2 (ii) a Modeling of a PIN diode as a Voltage Source, v D =0; duration of time
Wherein t is r Is the rise time, V ml Is Miller level and has the expression V ml ＝v ge (t 2 )＝v ge (i c ＝I L )，I L Is the load current, v ge Is expressed as
Step 4.3: opening transient process stage 3, i.e. [ t ] 2 ，t 3 ]Modeling an insulated gate bipolar transistor as a current source, i, using a current source-voltage source mode c ＝K(v ge -V T ) 2 (ii) a Modeling of a PIN diode as a Voltage Source, v D =0; duration of time
Wherein V gerr Is the peak of the gate voltage during the reverse recovery process, expressed as
v ge Is expressed as
Step 4.4: opening transient process stage 4, i.e. [ t ] 3 ，t 4 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i gon Is the gate charging current during the turn-on process, expressed as
The PIN diode is modeled as a current source,
duration according to t 4 -t 2 ＝t rr Determining;
step 4.5: opening transient process phase 5, i.e. [ t ] 4 ，t 5 ]The insulated gate bipolar transistor is modeled as a voltage source in a voltage source-current source mode,
same as stage 4; modeling of a PIN diode as a current source, i D =0; the duration is according to
Determining;
step 4.6: opening transient process phase 6, i.e. [ t ] 5 ，t 6 ]Modeling an insulated gate bipolar transistor as a voltage source, v, using a voltage source-current source mode ce ＝V lim +V ml -i gon (t-t 5 )/C oxd (ii) a Modeling of PIN diodes as current sources, i D =0; duration according to t 6 ＝t(v ce ＝V sat )＝t 5 +C oxd (V lim +V ml -V sat )/i gon And (4) determining.
And 5: and 3, determining expressions of the voltage and the current source at each stage of the transient switching-off process of the commutation unit in the step 3.
Step 5.1: off transient phase 1, i.e. [ t ] 7 ，t 8 ]In current source-voltage source mode, insulated gateModeling of a bipolar transistor as a voltage source, v ce ＝V sat (ii) a Modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining where t doff Is the turn-off delay time; tau is 2 Is a time constant expressed as τ 2 ＝(C ge +C gc )(R Goff +R Gint )，R Goff Is a gate turn-off resistance;
and step 5.2: turn-off transient phase 2, i.e. [ t ] 8 ,t 9 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i goff Is the gate discharge current during the turn-off process, expressed as
Modeling of PIN diodes as current sources, i D =0; duration according to t 9 -t 8 ＝(V lim +V ml -V sat )C oxd /i goff Determining;
step 5.3: off transient phase 3, i.e. [ t ] 9 ,t 10 ]In a voltage source-current source mode, the insulated gate bipolar transistor is modeled as a voltage source,
modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining;
step 5.4: turn-off transient phase 4, i.e. [ t ] 10 ,t 11 ]In a current source-voltage source mode, the insulated gate bipolar transistor is modeled as a current source,
wherein
Is the maximum rate of change of current in the turn-off process, and has the expression
t fast Is the duration of the fast current-down phase, t tail Is the duration of the trailing phase of the current, I tail Is the trailing current; modeling of PIN diodes as Voltage Source, v D =0; duration according to t 11 -t 10 ＝t fast Determining;
step 5.5: off transient phase 5, [ t ] 11 ,t 12 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of PIN diodes as Voltage Source, v D =0; duration according to t 12 -t 11 ＝t fast Determining;
step 5.6: turn-off transient phase 6, i.e. [ t ] 12 ,t 13 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of PIN diodes as Voltage Source, v D =0; duration according to t 13 -t 12 ＝t tail And (4) determining.
The simulation result is obtained by applying the method of the invention and is compared with the experimental result. The test results are shown in fig. 5 and 6. It can be seen that the transient section analysis model provided by the invention can accurately reflect key parameters of the switching transient process.
The simulation time of the proposed transient segmentation analysis model is compared with the simulation time of Saber simulation software. By adopting a single-phase H-bridge inverter example, an igbt _ b model is adopted for an insulated gate bipolar transistor device of the Saber, a dp1 model is adopted for a PIN diode device, the time consumed by a 0.2s dynamic simulation process in Saber software is 127s, only 3.5s is needed for the 0.2s dynamic simulation process by utilizing a transient sectional analysis model, and the simulation speed is greatly improved by utilizing the transient sectional analysis model. In addition, the device model in Saber often has the problem of non-convergence in complex circuits with multiple levels and the like, while the transient segmentation analysis model does not contain any dynamic element and only contains a voltage source and a current source, and the mathematical model of the transient segmentation analysis model is an algebraic equation rather than a differential equation, so that the problem of convergence does not exist.
The invention has the following characteristics:
1. the transient segmentation analysis model modeling method is used for modeling the insulated gate bipolar transistor and the freewheeling diode commutation unit by segmenting the transient process of the commutation unit and utilizing the combination of the time-varying voltage source and the current source at different stages, so that the reduced decoupling of the complex physical mechanism of the transient process is realized.
2. The transient segmental analysis model modeling method greatly improves the convergence and the operation speed of the model.
3. The provided transient sectional analysis model modeling method can accurately reflect key parameters of a transient process, such as voltage and current spikes, voltage and current rising, falling time, switching loss and the like.
4. All parameters of the proposed transient piecewise analytical model modeling method may be obtained entirely from a data manual.
Finally, it should be pointed out that: the above examples are only for illustrating the technical solutions of the present invention, and are not limited thereto. Although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (5)
1. A transient segment analytic modeling method for IGBT and PIN diode commutation cells, characterized in that the transient segment analytic modeling method is determined by the following steps:
step 1: extracting transient sectional analysis model parameters according to chart information of a data manual;
step 2: extracting transient segmental analysis model parameter temperature correction coefficients according to chart information containing temperature coefficients in a data manual;
and step 3: determining the stage division and the transient stage analysis model mode of the transient process of the switching-on and switching-off of the commutation unit, dividing the switching-on and switching-off transient process into different stages according to different physical mechanisms of the switching-on and switching-off transient process, and modeling the commutation unit by using one of a current source-voltage source mode or a voltage source-current source mode in the transient stage analysis model in each stage, wherein the current source-voltage source mode models the insulated gate bipolar transistor as a current source and the PIN diode as a voltage source, and the voltage source-current source mode models the insulated gate bipolar transistor as a voltage source and the PIN diode as a current source;
and 4, step 4: determining expressions of voltage sources and current sources of each stage of the transient process of switching on the current conversion unit in the step 3;
step 4, determining expressions of a voltage source and a current source of each phase of the switching-on transient process of the current conversion unit in step 3, if a current source-voltage source mode is adopted, modeling the insulated gate bipolar transistor as the current source, and recording a current expression as i c Modeling a PIN diode as a voltage source, and expressing the voltage as v D (ii) a If a voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source, and the voltage expression is recorded as v ce (ii) a The PIN diode is modeled as a current source, and the current is recorded as i D ；
Step 4.1: opening transient process stage 1, i.e. [ t ] 0 ,t 1 ]Modeling an insulated gate bipolar transistor as a current source, i, using a current source-voltage source mode c =0; modeling of a PIN diode as a Voltage Source, v D =0; duration of time
Whereint don Is the on delay time; tau is 1 Is a time constant expressed as τ 1 ＝(C ge +C gc )(R Gon +R Gint )，R Gon Is the gate turn-on resistance, R Gint Is the gate internal resistance; v Gon Is the driving on voltage, V Goff Is the drive turn-off voltage;
step 4.2: switching on transient process phase 2, i.e. [ t ] 1 ,t 2 ]Using a current source-voltage source model, the IGBT is modeled as a current source, i c ＝K(v ge -V T ) 2 (ii) a Modeling of PIN diodes as Voltage Source, v D =0; duration of time
Wherein t is r Is the rise time, V ml Is Miller level and has the expression V ml ＝v ge (t 2 )＝v ge (i c ＝I L )，I L Is the load current, v ge Is expressed as
Step 4.3: opening transient process stage 3, i.e. [ t ] 2 ,t 3 ]Using a current source-voltage source model, the IGBT is modeled as a current source, i c ＝K(v ge -V T ) 2 (ii) a Modeling of PIN diodes as Voltage Source, v D =0; duration of time
Wherein V gerr Is the gate voltage spike of the reverse recovery process, expressed as
v ge Is expressed as
Step 4.4: opening transient process stage 4, i.e. [ t ] 3 ,t 4 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i gon Is the gate charging current in the turn-on process, expressed as
The PIN diode is modeled as a current source,
duration according to t 4 -t 2 ＝t rr Determining;
step 4.5: opening transient process phase 5, i.e. [ t ] 4 ,t 5 ]The insulated gate bipolar transistor is modeled as a voltage source in a voltage source-current source mode,
same as stage 4; modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining;
step 4.6: opening transient process phase 6, i.e. [ t ] 5 ,t 6 ]Modeling an insulated gate bipolar transistor as a voltage source, v, using a voltage source-current source mode ce ＝V lim +V ml -i gon (t-t 5 )/C oxd (ii) a Modeling of PIN diodes as current sources, i D =0; duration according to t 6 ＝t(v ce ＝V sat )＝t 5 +C oxd (V lim +V ml -V sat )/i gon Determining;
and 5: determining expressions of voltage sources and current sources at each stage of the transient switching-off process of the current conversion unit in the step 3;
step 5 determines the expressions of the voltage source and the current source at each stage of the transient switching-off process of the commutation cell in step 3, if a current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as the current source, and the current expression is represented as i c PIN diode is modeled as a voltage source, and the voltage expression is denoted v D (ii) a If a voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source, and the voltage expression is recorded as v ce (ii) a The PIN diode is modeled as a current source, and the current is recorded as i D ；
Step 5.1: off transient phase 1, i.e. [ t ] 7 ,t 8 ]Modeling an insulated gate bipolar transistor as a voltage source, v, using a current source-voltage source model ce ＝V sat (ii) a Modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining where t doff Is the turn-off delay time; tau is 2 Is a time constant expressed as τ 2 ＝(C ge +C gc )(R Goff +R Gint )，R Goff Is a gate turn-off resistance;
step 5.2: turn-off transient phase 2, i.e. [ t ] 8 ,t 9 ]The voltage source-current source mode is adopted, the insulated gate bipolar transistor is modeled as a voltage source,
wherein i goff Is the gate discharge current during turn-off, expressed as
Modeling of PIN diodes as current sources, i D =0; duration according to t 9 -t 8 ＝(V lim +V ml -V sat )C oxd /i goff Determining;
step 5.3: off transient phase 3, i.e. [ t ] 9 ,t 10 ]Using a voltage source-current sourceMode, the insulated gate bipolar transistor is modeled as a voltage source,
modeling of PIN diodes as current sources, i D =0; the duration is according to
Determining;
step 5.4: off transient phase 4, i.e. [ t ] 10 ,t 11 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
wherein
Is the maximum rate of change of current in the turn-off process, and the expression is
t fast Is the duration of the fast current-down phase, t tail Is the duration of the trailing phase of the current, I tail Is the trailing current; modeling of PIN diodes as Voltage Source, v D =0; duration according to t 11 -t 10 ＝t fast Determining;
step 5.5: off transient phase 5, [ t ] 11 ,t 12 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of PIN diodes as Voltage Source, v D =0; duration according to t 12 -t 11 ＝t fast Determining;
step 5.6: turn-off transient phase 6, i.e. [ t ] 12 ,t 13 ]The current source-voltage source mode is adopted, the insulated gate bipolar transistor is modeled as a current source,
modeling of a PIN diode as a Voltage Source, v D =0; duration according to t 13 -t 12 ＝t tail And (4) determining.
2. The transient segment analytic modeling method for IGBT and PIN diode commutation cells of claim 1, characterized in that: the transient segmentation analysis model parameters in the step 1 comprise: the method comprises the following steps of (1) obtaining MOS gate threshold voltage, insulated gate bipolar transistor equivalent transconductance, insulated gate bipolar transistor equivalent capacitance parameters and PIN diode reverse recovery parameters;
(1) according to MOS gate threshold voltage V in data manual T Extracting the MOS gate threshold voltage;
(2) extracting the equivalent transconductance of the insulated gate bipolar transistor according to the following formula:
i c ＝K(v ge -V T ) 2
wherein i c Is the collector current of the insulated gate bipolar transistor, K is the equivalent transconductance of the insulated gate bipolar transistor, v ge The gate voltage of the insulated gate bipolar transistor is obtained, the upper formula is fitted by utilizing a transfer characteristic curve in a data manual, and the equivalent transconductance K of the insulated gate bipolar transistor is determined;
(3) extracting the equivalent capacitance parameter of the insulated gate bipolar transistor according to the following formula:
wherein, C gc Is the equivalent capacitance of the gate electrode and the collector electrode of the insulated gate bipolar transistor, lambda is the capacitance coefficient of the insulated gate bipolar transistor, v ce Is the collector-emitter voltage, V, of an insulated gate bipolar transistor lim Is the voltage at the point of capacitance transition, C oxd Is oxide capacitance, and the capacitance curve in the data manual is used to fit the above formula to determine the parameters lambda and V lim And C oxd A value of (d);
(4) extracting a PIN diode reverse recovery parameter according to the following formula:
I rr ＝AI D B
t rr ＝CI D D
wherein, I rr Is the reverse recovery current of the PIN diode, t rr The inverse recovery time of the PIN diode is used, A, B, C and D are coefficients, the inverse recovery curve in the data manual is used for fitting the above formula, and the values of the parameters A, B, C and D are determined.
3. The transient segment analytic modeling method for IGBT and PIN diode commutation cells of claim 2, characterized in that: the step 2 of extracting the temperature correction coefficient of the transient sectional analysis model parameter comprises the following specific steps:
step 2.1: determining a threshold voltage temperature correction factor according to the following equation:
V T (T j )＝V T (T 0 )-α(T j -T 0 )
wherein, V T Is MOS gate threshold voltage, T j Is junction temperature, T 0 The method comprises the steps that a data manual is used for testing temperature, alpha is a threshold voltage temperature correction coefficient of an MOS gate electrode, and the data manual is used for fitting to determine an alpha value;
step 2.2: determining the equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
wherein beta is an equivalent transconductance temperature correction coefficient of the insulated gate bipolar transistor, and a data manual is utilized to perform fitting to determine a beta value;
step 2.3: determining a PIN diode reverse recovery charge temperature correction factor according to the following formula:
wherein Q is rr The method comprises the steps that the temperature of the reverse recovery charge of the PIN diode is corrected by a temperature correction coefficient of the reverse recovery charge of the PIN diode, and a data manual is used for fitting to determine the value of gamma;
step 2.4: determining the temperature correction coefficient of the reverse recovery time of the PIN diode according to the following formula:
wherein, t rr The method comprises the following steps that (1) the reverse recovery time of the PIN diode is obtained, eta is the temperature correction coefficient of the reverse recovery time of the PIN diode, and a data manual is used for fitting to determine the value of eta;
step 2.5: determining the on-state voltage drop temperature correction coefficient of the insulated gate bipolar transistor according to the following formula:
V sat (T j )＝V sat (T 0 )+κ(T j -T 0 )
wherein, V sat And k is the on-state voltage drop of the insulated gate bipolar transistor, and the value of k is determined by fitting through a data manual, wherein k is the temperature correction coefficient of the on-state voltage drop of the insulated gate bipolar transistor.
4. The transient segment analytic modeling method for IGBT and PIN diode commutation cells of claim 3, characterized in that: the switching-on transient process in the step 3 is divided into six stages; stage 1 is that the transient process starts until the collector current starts to rise, stage 2 is that the collector current starts to rise until the collector current rises to the load current, stage 3 is that the collector current rises to the load current until the collector current rises to the maximum, stage 4 is that the collector current rises to the maximum until the collector current falls to the load current, stage 5 is that the collector current falls to the load current until the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point, stage 6 is that the tube voltage drop falls to the sum of the miller level and the voltage of the capacitance switching point until the tube voltage drop falls to the on-state voltage drop; wherein phases 1, 2 and 3 are modeled using the current source-voltage source mode and phases 4, 5 and 6 are modeled using the voltage source-current source mode.
5. The transient segment analytic modeling method for IGBT and PIN diode commutation cells of claim 4, characterized in that: the turn-off transient process in the step 3 is divided into six stages; stage 1 is that the transient process starts until the tube voltage drop starts to rise, stage 2 is that the tube voltage drop starts to rise until the tube voltage drop rises to the sum of the miller level and the voltage of the capacitance transition point, stage 3 is that the tube voltage drop rises to the sum of the miller level and the voltage of the capacitance transition point until the tube voltage drop rises to the voltage of the direct current bus, stage 4 is that the tube voltage drop rises to the voltage of the direct current bus until half of the rapid fall process of the collector current, stage 5 is that the collector current falls to half of the rapid fall process until the collector current falls to the trailing current, stage 6 is that the collector current falls to the trailing current until the collector current falls to zero; wherein phases 1, 2 and 3 are modeled using the voltage source-current source mode and phases 4, 5 and 6 are modeled using the current source-voltage source mode.
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