CN109286392A - SCR driving circuit and driving method thereof - Google Patents
SCR driving circuit and driving method thereof Download PDFInfo
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- CN109286392A CN109286392A CN201811428026.0A CN201811428026A CN109286392A CN 109286392 A CN109286392 A CN 109286392A CN 201811428026 A CN201811428026 A CN 201811428026A CN 109286392 A CN109286392 A CN 109286392A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000002955 isolation Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 87
- 229910052710 silicon Inorganic materials 0.000 claims description 87
- 239000010703 silicon Substances 0.000 claims description 87
- 101150066742 TRI1 gene Proteins 0.000 claims description 35
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 8
- 230000001960 triggered effect Effects 0.000 claims description 7
- 230000003111 delayed effect Effects 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 5
- 230000001934 delay Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 101100365087 Arabidopsis thaliana SCRA gene Proteins 0.000 description 4
- 101150105073 SCR1 gene Proteins 0.000 description 4
- 101100134054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) NTG1 gene Proteins 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 101000668165 Homo sapiens RNA-binding motif, single-stranded-interacting protein 1 Proteins 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 102100039692 RNA-binding motif, single-stranded-interacting protein 1 Human genes 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 102220124597 rs374821619 Human genes 0.000 description 2
- 102220098310 rs78347057 Human genes 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08108—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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- Control Of Resistance Heating (AREA)
- Electronic Switches (AREA)
Abstract
本发明公开了可控硅驱动电路及其驱动方法。可控硅驱动电路包括MCU芯片U1、过零信号电路、可控硅触发电路，所述可控硅驱动电路用于驱动发热元件Heater。低压隔离光耦B1与市电的L线之间接入电荷保持电路。本发明公开的可控硅驱动电路及其驱动方法，通过巧妙设置电荷保持电路，实现在多类型故障状态下的可控硅驱动自动保护，避免高温灼烧等安全隐患；通过MCU芯片的内部定时器延时输出可控硅触发时间基准，修正过零信号延时；通过将可控硅的触发时间分解为多个短时触发片段，保证电路触发的可靠性，同时降低电磁辐射。
The invention discloses a thyristor driving circuit and a driving method thereof. The thyristor driving circuit includes an MCU chip U1, a zero-crossing signal circuit, and a thyristor trigger circuit, and the thyristor driving circuit is used to drive the heating element Heater. A charge holding circuit is connected between the low-voltage isolation optocoupler B1 and the L line of the mains. The thyristor driving circuit and its driving method disclosed by the invention can realize automatic protection of thyristor driving under various types of faults by skillfully setting a charge holding circuit, and avoid potential safety hazards such as high temperature burning; through the internal timing of the MCU chip The thyristor delays the output of the thyristor trigger time reference, and corrects the zero-crossing signal delay; by decomposing the thyristor trigger time into multiple short-term trigger segments, the reliability of circuit triggering is ensured, and electromagnetic radiation is reduced at the same time.
Description
Technical field
The invention belongs to semiconductor power actuation techniques fields, and in particular to a kind of controllable silicon drive circuit and one kind are controllable
Silicon driving circuit driving method.
Background technique
Referring to Figure 1 of the drawings, Fig. 1 shows traditional silicon-controlled drive control scheme of classics.Specifically, work as zero cross signal
When ZeroCross_in is reached in advance, MCU issues low level trigger signal SCR2 after receiving signal immediately, drives zero passage optocoupler
MOC3041 is opened, and connects the power circuit of periphery.
However, above-mentioned conventional drive scheme existing defects, are summarized as follows.Since control chip issues the triggering letter of mistake
Number, the chip program operation driving signals fault condition such as pause/damage, cause trigger signal SCR2 to maintain low level for a long time
When, it is silicon-controlled can be in the conductive state always, cause periphery power circuit it is out of control, or even there are motor driving, heater burn
It burns and the accident potential such as fire occurs.
It can be automatic under the fault conditions such as system debug, failure of chip, program mal therefore, it is necessary to develop one
Close silicon-controlled safe trigger circuit.
Summary of the invention
The present invention is directed to the situation of the prior art, overcomes drawbacks described above, provides a kind of controllable silicon drive circuit and one kind can
Control silicon driving circuit driving method.
The present invention use following technical scheme, the controllable silicon drive circuit include MCU chip U1, zero-crossing signal circuit,
Thyristor gating circuit, the controllable silicon drive circuit is for driving heater element Heater, in which:
The forceful electric power lateral circuit structure of the zero-crossing signal circuit includes resistance R45, resistance R46, rectifier diode D1, low pressure
One end of isolation optocoupler B1, the resistance R46 are connected to one end of resistance R45 by rectifier diode D1, and the resistance R45's is another
One end is connected to the N line of alternating current, another input terminal for being terminated at low pressure isolation optocoupler B1 of the resistance R46, the low pressure isolation
Charge holding circuit is accessed between optocoupler B1 and the L line of alternating current；
The thyristor gating circuit include silicon-controlled TRI1, resistance R14, current-limiting resistance R4, low pressure isolation optocoupler B2 and
Resistance R48, the end T2 of the silicon-controlled TRI1 are connected to heater element Heater, and the end T1 of the silicon-controlled TRI1 is connected to charge guarantor
Circuit is held, the end T1 of the silicon-controlled TRI1 passes through the end G that resistance R14 is connected to silicon-controlled TRI1, the silicon-controlled TRI1 simultaneously
The end G the 1st end of low pressure isolation optocoupler B2 is connected to by current-limiting resistance R4, the 3rd end of the low pressure isolation optocoupler B2 passes through electricity
Resistance R48 is connected to the control port of MCU chip U1.
According to the above technical scheme, the charge holding circuit is composed in parallel by zener diode D6 and capacitor C2, the electricity
Lotus holding circuit is used to provide the charge for driving silicon-controlled TRI1 in finite time to thyristor gating circuit, and above-mentioned charge is protected
The charge that circuit is provided to thyristor gating circuit is held to have and only have silicon-controlled with internal trigger in 1 to 10 ac cycle
TRI1 is limited；
The rectifier diode D1 and low pressure isolation optocoupler B1 had both constituted the charging circuit of above-mentioned charge holding circuit, simultaneously
Also it constitutes high-tension current zero cross signal and circuit occurs, so that charging current is only generated in the positive half cycle of alternating voltage, while zero passage
Signal is also only generated in the positive half cycle of alternating voltage, the cut-off of negative half period circuit.
According to the above technical scheme, the weak-feedback side of transmission line circuit structure of the zero-crossing signal circuit include resistance R3, resistance R5 and
Triode Q3, an end of the resistance R3 are connected to the 2nd end of low pressure isolation optocoupler B1, and the another of the resistance R3 is terminated at three poles
The collector of the base stage of pipe Q3, the triode Q3 is connected to the signal input part of MCU chip U1 and one end of resistance R5, institute simultaneously
State the other end ground connection of resistance R5.
Present patent application also discloses a kind of controllable silicon drive circuit driving method, comprising the following steps:
Step S1: apply alternating voltage in the weak-feedback side of transmission line shape of zero-crossing signal circuit simultaneously at the both ends of alternating current L line and N line
At the zero cross signal with lag zero crossing Δ t lag time；
Step S2:MCU chip obtains above-mentioned zero cross signal, and opens a timer internal according to above-mentioned zero cross signal,
Above-mentioned timer internal is for setting control machines time reference t1 and control machines time reference t2；
Step S3:MCU chip is exported according to above-mentioned control machines time reference t1 and control machines time reference t2
Control signal；
Step S4: silicon-controlled TRI1 is driven by the charge that charge holding circuit provides, and silicon-controlled TRI1 is simultaneously according to above-mentioned
It controls signal and drives heater element Heater.
According to the above technical scheme, step S1 is embodied are as follows:
Apply alternating voltage simultaneously at the both ends of alternating current L line and N line, in the positive half cycle of alternating voltage, alternating voltage is more than
When the sum of capacitor C2 both end voltage Uc2 and low pressure isolation optocoupler B1 forward direction trigger voltage Vf, in the weak-feedback side of transmission line of zero-crossing signal circuit
Form the zero cross signal with lag zero crossing Δ t lag time.
According to the above technical scheme, above-mentioned lag time Δ t are as follows:
According to the above technical scheme, step S2 specifically includes the following steps:
Step S2.1:MCU chip obtains above-mentioned zero cross signal, and opens an internal timing according to above-mentioned zero cross signal
Device；
Step S2.2: (the T/2- Δ t) time issues the control silicon triggered time benchmark t1 of alternating voltage for delay；
Step S2.3: continue the T/2 time that is delayed, issue the control machines time reference t2 of alternating voltage.
According to the above technical scheme, the control signal in step S3 is made of the segment of triggering in short-term of at least two.
According to the above technical scheme, 30 to 200us are divided between the adjacent segment of triggering in short-term, each segment of triggering in short-term
Shi Changwei 10 to 100us.
According to the above technical scheme, the above-mentioned maximum amount of charge Q provided by charge holding circuit are as follows:
Wherein, U is the voltage effective value of AC power source.
Controllable silicon drive circuit and its driving method disclosed by the invention, the beneficial effect is that, pass through ingenious setting electricity
Lotus holding circuit realizes the silicon-controlled driving automatic protection under polymorphic type malfunction, avoids the security risks such as high temperature sintering；
Pass through the timer internal delay output control machines time reference of MCU chip, amendment zero cross signal delay；By will be controllable
The triggered time of silicon be decomposed into it is multiple trigger segment in short-term, guarantee the reliability of circuit triggering, while reducing electromagnetic radiation.
Detailed description of the invention
Fig. 1 is the circuit diagram of traditional silicon-controlled drive scheme.
Fig. 2 is the circuit diagram of the partial circuit of the preferred embodiment of the present invention.
Fig. 3 is the circuit diagram of the partial circuit of the preferred embodiment of the present invention.
Fig. 4 is the waveform diagram of the zero cross signal (ZeroCrocs In) of the preferred embodiment of the present invention.
Fig. 5 is multiple schematic diagrames for triggering segment in short-term of the preferred embodiment of the present invention.
Specific embodiment
The invention discloses a kind of controllable silicon drive circuits and a kind of controllable silicon drive circuit driving method, below with reference to excellent
Embodiment is selected, further description of the specific embodiments of the present invention.
The circuit structure of the controllable silicon drive circuit, Fig. 4 are respectively illustrated referring to Fig. 2 to Fig. 5, Fig. 2 and Fig. 3 of attached drawing
Show the waveform of zero cross signal, Fig. 5 shows the triggering mode (multisection type triggering segment) after a kind of optimization.
Preferably, the controllable silicon drive circuit includes MCU chip U1, zero-crossing signal circuit, thyristor gating circuit, institute
Controllable silicon drive circuit is stated for driving heater element Heater, in which:
The forceful electric power lateral circuit structure of the zero-crossing signal circuit includes resistance R45, resistance R46, rectifier diode D1, low pressure
One end of isolation optocoupler B1, the resistance R46 are connected to one end of resistance R45 by rectifier diode D1, and the resistance R45's is another
One end is connected to the N line of alternating current (AC power source), and another the 1st end for being terminated at low pressure isolation optocoupler B1 of the resistance R46 is described
Charge holding circuit is accessed between low pressure isolation optocoupler B1 and the L line of alternating current (AC power source)；
The thyristor gating circuit includes silicon-controlled TRI1 (bidirectional triode thyristor), resistance R14, current-limiting resistance R4 (driving
Current limitation resistor), low pressure isolation optocoupler B2 and resistance R48, the end T2 of the silicon-controlled TRI1 be connected to heater element Heater,
The end T1 of the silicon-controlled TRI1 is connected to charge holding circuit, and the end T1 of the silicon-controlled TRI1 passes through resistance R14 simultaneously and is connected to
The end G of silicon-controlled TRI1, the end G of the silicon-controlled TRI1 are connected to the 1st end of low pressure isolation optocoupler B2, institute by current-limiting resistance R4
The 3rd end for stating low pressure isolation optocoupler B2 is connected to the control port of MCU chip U1 by resistance R48 (SCR1 controls signal).
It is noted that the charge holding circuit is composed in parallel by zener diode D6 and capacitor C2, which is protected
Circuit is held for providing the charge for driving silicon-controlled TRI1 in finite time to thyristor gating circuit, so that silicon-controlled TRI1
It can not effectively be opened when next exchange half cycle arrives.The heater circuit under malfunction is protected, eliminates high temperature automatically
The security risks such as calcination, on fire.
In other words, above-mentioned charge holding circuit is limited to the charge that thyristor gating circuit provides.
Further, the charge that above-mentioned charge holding circuit is provided to thyristor gating circuit is to have and only have at 1 extremely
10 ac cycles are limited with the silicon-controlled TRI1 of internal trigger.
Preferably, the pressure stabilizing threshold value at the both ends the zener diode D6 is 12V.
It is noted that the rectifier diode D1 and low pressure isolation optocoupler B1 had both constituted above-mentioned charge holding circuit
Charging circuit, while also constituting high-tension current zero cross signal and circuit occurs, which makes zero cross signal electric
The quiescent dissipation on road reduces half.
In other words, above-mentioned high-tension current zero cross signal generation circuit makes charging current only in the positive half cycle of AC power source
It generates, while zero cross signal is also only generated in the positive half cycle of alternating voltage, the cut-off of negative half period circuit meets environmentally protective energy conservation
It is required that.
It is noted that present patent application also discloses the silicon-controlled driving based on above-mentioned controllable silicon drive circuit
Circuit drive method, comprising the following steps:
Step S1: apply alternating voltage in the weak-feedback side of transmission line shape of zero-crossing signal circuit simultaneously at the both ends of alternating current L line and N line
At the zero cross signal (ZeroCross in) with lag zero crossing Δ t lag time；
Step S2:MCU chip obtains above-mentioned zero cross signal, and opens a timer internal according to above-mentioned zero cross signal,
Above-mentioned timer internal is for setting control machines time reference t1 and control machines time reference t2；
Step S3:MCU chip is exported according to above-mentioned control machines time reference t1 and control machines time reference t2
It controls signal (SCR1)；
Step S4: silicon-controlled TRI1 is driven by the charge that charge holding circuit provides, and silicon-controlled TRI1 is simultaneously according to above-mentioned
It controls signal and drives heater element Heater.
Preferably, step S1 is embodied are as follows:
Apply alternating voltage simultaneously at the both ends of alternating current L line and N line, in the positive half cycle of alternating voltage, alternating voltage is more than
When the sum of capacitor C2 both end voltage Uc2 and low pressure isolation optocoupler B1 forward direction trigger voltage Vf, in the weak-feedback side of transmission line of zero-crossing signal circuit
Form the zero cross signal with lag zero crossing Δ t lag time.
Preferably, above-mentioned lag time Δ t are as follows:
Preferably, in step S1, due to high-tension current sample circuit, zero cross signal (ZeroCross in) is in Current Voltage
Positive half cycle generate and the negative half period of Current Voltage end, to reduce quiescent dissipation.
Preferably, step S2 specifically includes the following steps:
Step S2.1:MCU chip obtains above-mentioned zero cross signal, and opens an internal timing according to above-mentioned zero cross signal
Device；
Step S2.2: (the T/2- Δ t) time issues the control silicon triggered time benchmark t1 of alternating voltage for delay；
Step S2.3: continue the T/2 time that is delayed, issue the control machines time reference t2 of alternating voltage.
Wherein, the control machines time reference t1 in step S2.2 is located at the negative half period of alternating voltage.
Wherein, the control machines time reference t2 in step S2.3 is located at the positive half cycle of alternating voltage.
Wherein, the cycle T of alternating voltage takes the average value at multiple zero cross signal intervals.Such as: in nearest 80 milliseconds
In sample 5 zero cross signals, then cycle T=80ms/ (5-1)=20ms.
Preferably, the control signal (SCR1) in step S3 is made of the segment of triggering in short-term of at least two.
In other words, since the signal errors of practical zero crossing circuitry, AC voltage fluctuations, power grid interference, and inside are fixed
When device precision, silicon-controlled triggered time benchmark is possible to inaccurate, it is advanced or fall behind true zero cross signal tens it is delicate,
It will cause control machines omission or Time delay when advanced too much and biggish disturbance power conducted component can be caused.Using
The method of such multiple clips triggering, ensure that circuit reliable trigger, and electromagnetic radiation is minimum.
Wherein, adjacent trigger in short-term is divided into tens microseconds between segment, and preferably 30 to 200us.
Wherein, each duration for triggering segment in short-term is preferably 10 to 100us.
Preferably, the charge that the charge holding circuit in step S4 provides only supplies an alternating voltage half cycle internal trigger controllable
Silicon TRI1.
Wherein, the above-mentioned maximum amount of charge Q provided by charge holding circuit are as follows:
Wherein U is the voltage effective value of AC power source, and when power supply is 220 volts, frequency is 50 hertz.
Maximum charge Q ≌ 19.4uQ as resistance R45=R46=51K, on capacitor C2.
When choosing zener diode D6 both ends pressure stabilizing threshold value is 12V, the capacitance C=Q/12=1.6uF of C2 is selected.Consider
To the deviation of actual capacitance and the stationarity requirement of driving voltage, C2 >=4.7uF is taken.
According to above preferred embodiment, controllable silicon drive circuit disclosed in present patent application, working principle is as follows
It is described.
Referring to Fig. 2 of attached drawing, the controllable silicon drive circuit includes MCU chip U1, zero-crossing signal circuit, control machines
Circuit, the controllable silicon drive circuit is for driving silicon-controlled TRI1 (i.e. heater element).
Referring to Fig. 3 of attached drawing, the forceful electric power lateral circuit structure of the zero-crossing signal circuit includes resistance R45, resistance R46, whole
Flow diode D1, low pressure isolation optocoupler B1, voltage-stabiliser tube D6, capacitor C2；
The weak-feedback side of transmission line circuit structure of the zero-crossing signal circuit includes resistance R3, resistance R5 and triode Q3；
The thyristor gating circuit include silicon-controlled TRI1, resistance R14, current-limiting resistance R4, low pressure isolation optocoupler B2 and
Resistance R48.
Referring to Fig. 4 of attached drawing, when applying alternating voltage at the both ends L, N, in the positive half cycle of alternating voltage, alternating voltage is super
When crossing the sum of capacitor C2 both end voltage Uc2 and low pressure isolation optocoupler B1 forward direction trigger voltage Vf, there is lag zero crossing in weak-feedback side of transmission line
Zero cross signal occur, lag time Δ t are as follows:
When control chip MCU delay Δ t receives zero cross signal, a timer internal is opened immediately, be delayed (T/2-
The control machines time reference t1 of Δ t) sending negative half period；Delay T/2 is then proceeded to, when issuing the control machines of positive half cycle
Between benchmark t2 to correct the delay of zero cross signal reduce the starting current in circuit, reduce Conduction Interference and electromagnetic radiation.
The cycle T of AC power source takes the average value at multiple zero cross signal intervals.Such as: it is adopted within 80 milliseconds of nearest times
Sample is to 5 zero cross signals, then cycle T=80ms/ (5-1)=20ms.
For silicon-controlled driving charge from zero-crossing signal circuit, the charge generated is only capable of can for driving in finite time
Silicon is controlled to use；It when control signal SCR1 error, shows as maintaining high level, perhaps maintains low level or continuous impulse excitation
When, the charge stored on C2 exhausts quickly, can not be silicon-controlled in next alternating voltage half cycle internal trigger, it plays single soft
Automatic protection effect under part or hardware driving failure.In one cycle, zero-crossing signal circuit (charge holding circuit) is stored up
The maximum amount of charge Q deposited:
Wherein U is the voltage effective value of AC power source, and when power supply is 220 volts, frequency is 50 hertz.
Maximum charge Q ≌ 19.4uQ as resistance R45=R46=51K, on capacitor C2.
When choosing zener diode D6 both ends pressure stabilizing threshold value is 12V, the capacitance C=Q/12=1.6uF of C2 is selected.Consider
To the deviation of actual capacitance and the stationarity requirement of driving voltage, C2 >=4.7uF is taken.
It is noted that choosing silicon-controlled model appropriate and driving current limiting resistance R4, can effectively realize
Silicon-controlled output is automatically closed when driving signal failure.
For example, choosing R4=330 Ω, then silicon controlled trigger current is approximately equal to 12V/510 Ω=36mA, selects trigger current
For the silicon-controlled of 30mA.It is 19.4uQ/30mA=630us that charge, which can maintain the maximum time of trigger current, on capacitor C2.Work as touching
Low level of the signalling SCR in a cycle T, which is held time, to add up more than 630us, and the both ends capacitor C2 charge depletion is silicon-controlled
It will be unable to effectively be opened when next alternation arrives.The heater circuit under malfunction is protected, it is automatic to eliminate height
The security risks such as warm calcination, on fire.
Referring to Fig. 5 of attached drawing, the triggered time of silicon-controlled TRI1 is divided into the multiple of more than one and triggers segment in short-term, often
It is spaced tens microseconds and issues primary silicon-controlled driving trigger signal.Generally take the time 10 of each triggering segment to 100us or so,
30~200us is spaced between each triggering segment.
Due to signal errors, AC voltage fluctuations, the power grid interference of practical zero crossing circuitry and the precision of timer internal
Etc. factors, silicon-controlled triggered time benchmark be possible to inaccurate, it is advanced or fall behind true zero cross signal tens it is delicate, in advance
When will cause that control machines are omitted or Time delay is too many and can cause biggish disturbance power conducted component.Using above-mentioned
The mode of multiple clips triggering, ensure that circuit reliable trigger, and electromagnetic radiation is minimum.
Further, zero-crossing signal circuit rectifier diode D1 and low pressure isolation optocoupler B1 had both constituted above-mentioned charge and has kept electricity
The charging circuit on road, at the same also constitute high-tension current zero cross signal occur circuit so that charging current only alternating voltage just
Half cycle generates, while zero cross signal is also only generated in the positive half cycle of alternating voltage, and the cut-off of negative half period circuit makes the quiet of zero crossing circuitry
State lower power consumption half.Meet environmentally protective power conservation requirement.
For a person skilled in the art, technical solution documented by foregoing embodiments can still be repaired
Change or equivalent replacement of some of the technical features, it is all within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should be included in protection scope of the present invention.
Claims (10)
1. a kind of controllable silicon drive circuit, which is characterized in that including MCU chip U1, zero-crossing signal circuit, control machines electricity
Road, the controllable silicon drive circuit is for driving heater element Heater, in which:
The forceful electric power lateral circuit structure of the zero-crossing signal circuit includes resistance R45, resistance R46, rectifier diode D1, low pressure isolation
One end of optocoupler B1, the resistance R46 are connected to one end of resistance R45, the other end of the resistance R45 by rectifier diode D1
It is connected to the N line of alternating current, another the 1st end for being terminated at low pressure isolation optocoupler B1 of the resistance R46, the low pressure isolation optocoupler B1
Charge holding circuit is accessed between the L line of alternating current；
The thyristor gating circuit includes silicon-controlled TRI1, resistance R14, current-limiting resistance R4, low pressure isolation optocoupler B2 and resistance
R48, the end T2 of the silicon-controlled TRI1 are connected to heater element Heater, and the end T1 of the silicon-controlled TRI1 is connected to charge and keeps electricity
The end T1 on road, the silicon-controlled TRI1 passes through the end G that resistance R14 is connected to silicon-controlled TRI1, the end G of the silicon-controlled TRI1 simultaneously
The 1st end of low pressure isolation optocoupler B2 is connected to by current-limiting resistance R4, the 3rd end of the low pressure isolation optocoupler B2 passes through resistance R48
It is connected to the control port of MCU chip U1.
2. controllable silicon drive circuit according to claim 1, it is characterised in that:
The charge holding circuit is composed in parallel by zener diode D6 and capacitor C2, which is used for silicon-controlled
Trigger circuit is provided drives the charge of silicon-controlled TRI1 in finite time, and above-mentioned charge holding circuit is to thyristor gating circuit
The charge of offer is to have and be only limited in 1 to 10 ac cycle with the silicon-controlled TRI1 of internal trigger；
The rectifier diode D1 and low pressure isolation optocoupler B1 had both constituted the charging circuit of above-mentioned charge holding circuit, while also structure
Circuit occurs at high-tension current zero cross signal, so that charging current is only generated in the positive half cycle of alternating voltage, while zero cross signal
Also it is only generated in the positive half cycle of alternating voltage, the cut-off of negative half period circuit.
3. controllable silicon drive circuit according to claim 2, which is characterized in that the weak-feedback side of transmission line electricity of the zero-crossing signal circuit
Line structure includes resistance R3, resistance R5 and triode Q3, and an end of the resistance R3 is connected to the 2nd end of low pressure isolation optocoupler B1,
The collector of another base stage for being terminated at triode Q3 of the resistance R3, the triode Q3 is connected to MCU chip U1's simultaneously
One end of signal input part and resistance R5, the other end ground connection of the resistance R5.
4. according to claim 1 in -3 controllable silicon drive circuit described in any claim controllable silicon drive circuit driving side
Method, which comprises the following steps:
Step S1: apply alternating voltage simultaneously at the both ends of alternating current L line and N line and have to be formed in the weak-feedback side of transmission line of zero-crossing signal circuit
There is the zero cross signal of lag zero crossing Δ t lag time；
Step S2:MCU chip obtains above-mentioned zero cross signal, and opens a timer internal according to above-mentioned zero cross signal, above-mentioned
Timer internal is for setting control machines time reference t1 and control machines time reference t2；
Step S3:MCU chip is according to above-mentioned control machines time reference t1 and control machines time reference t2 output control
Signal；
Step S4: silicon-controlled TRI1 is driven by the charge that charge holding circuit provides, and silicon-controlled TRI1 is simultaneously according to above-mentioned control
Signal drives heater element Heater.
5. controllable silicon drive circuit driving method according to claim 4, which is characterized in that step S1 specific implementation are as follows:
Apply alternating voltage simultaneously at the both ends of alternating current L line and N line, in the positive half cycle of alternating voltage, alternating voltage is more than capacitor
When the sum of C2 both end voltage Uc2 and low pressure isolation optocoupler B1 forward direction trigger voltage Vf, formed in the weak-feedback side of transmission line of zero-crossing signal circuit
Zero cross signal with lag zero crossing Δ t lag time.
6. controllable silicon drive circuit driving method according to claim 5, which is characterized in that above-mentioned lag time Δ t are as follows:
7. controllable silicon drive circuit driving method according to claim 4, which is characterized in that step S2 specifically includes following
Step:
Step S2.1:MCU chip obtains above-mentioned zero cross signal, and opens a timer internal according to above-mentioned zero cross signal；
Step S2.2: (the T/2- Δ t) time issues the control silicon triggered time benchmark t1 of alternating voltage for delay；
Step S2.3: continue the T/2 time that is delayed, issue the control machines time reference t2 of alternating voltage.
8. controllable silicon drive circuit driving method according to claim 4, which is characterized in that the control signal in step S3
It is made of the segment of triggering in short-term of at least two.
9. controllable silicon drive circuit driving method according to claim 8, which is characterized in that adjacent to trigger segment in short-term
Between be divided into 30 to 200us, it is each trigger in short-term segment when a length of 10 to 100us.
10. controllable silicon drive circuit driving method according to claim 4, which is characterized in that above-mentioned to keep electricity by charge
The maximum amount of charge Q that road provides are as follows:
Wherein, U is the voltage effective value of AC power source.
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| CN111405715A (en) * | 2020-04-03 | 2020-07-10 | 宁波科尔维特照明有限公司 | Silicon controlled rectifier dimming system and dimming method thereof |
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