CN109148259A - A kind of surface treatment method of gallium arsenide substrate - Google Patents
A kind of surface treatment method of gallium arsenide substrate Download PDFInfo
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- CN109148259A CN109148259A CN201710504108.8A CN201710504108A CN109148259A CN 109148259 A CN109148259 A CN 109148259A CN 201710504108 A CN201710504108 A CN 201710504108A CN 109148259 A CN109148259 A CN 109148259A
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- gallium arsenide
- arsenide substrate
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- surface treatment
- laser
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004381 surface treatment Methods 0.000 title claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 4
- 239000005416 organic matter Substances 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 230000005856 abnormality Effects 0.000 abstract 1
- 230000003749 cleanliness Effects 0.000 abstract 1
- 238000001883 metal evaporation Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 5
- 241000931526 Acer campestre Species 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007794 irritation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
一种砷化镓衬底的表面处理方法，包括以下步骤：（1）对砷化镓衬底进行减薄；（2）将脉冲激光均匀作用于砷化镓衬底表面；（3）将脉冲激光作用后的砷化镓衬底用去离子水清洗；（4）将去离子水清洗后的砷化镓衬底用热氮烘干,得到表面洁净的砷化镓衬底。该方法简单，处理效率高，不引入刺激性化学试剂，只需借助脉冲激光、去离子水和热氮即可实现砷化镓衬底的表面清洁处理，处理后的砷化镓衬底表面无有机物、杂质颗粒，保证了后续金属蒸镀后的界面接触质量，防止产生掉电极、器件电压高等异常，提高产品良率和器件性能，最大程度的保证了表面清洁度，同时也提高了生产效率。
A surface treatment method for a gallium arsenide substrate, comprising the following steps: (1) thinning the gallium arsenide substrate; (2) uniformly applying a pulsed laser to the surface of the gallium arsenide substrate; (3) applying a pulsed laser to the surface of the gallium arsenide substrate The gallium arsenide substrate after laser action is cleaned with deionized water; (4) the gallium arsenide substrate cleaned with deionized water is dried with hot nitrogen to obtain a gallium arsenide substrate with a clean surface. The method is simple, has high processing efficiency, does not introduce irritating chemical reagents, and only needs to use pulsed laser, deionized water and hot nitrogen to clean the surface of the gallium arsenide substrate, and the surface of the treated gallium arsenide substrate has no Organic matter and impurity particles ensure the interface contact quality after subsequent metal evaporation, prevent electrode drop, device voltage and other abnormalities, improve product yield and device performance, maximize surface cleanliness, and improve production efficiency. .
Description
Technical field
The present invention relates to a kind of surface treatment methods of the gallium arsenide substrate of LED and/or LD, belong to materials processing technology
Field.
Background technique
GaAs a kind of important iii-v direct band gap compound semiconductor materials, because its electron mobility is high,
The characteristics such as forbidden bandwidth is big, consumption power is low are widely used in microelectronics and field of optoelectronic devices.GaAs is mesh
Preceding only this compound semiconductor materials maximum, most widely used, mostly important in the output of semiconductor silicon, microwave device,
Huge development potentiality has been shown in terms of luminescent device, especially current red-light LED and LD devices field, GaAs still based on
Flow substrate material.
In view of important application of the gallium arsenide substrate in terms of red-light LED and LD device, surface treatment seems increasingly important,
The stability and photoelectric parameter of device architecture are directly affected, such as before substrate surface grown epitaxial layer, generally requires to carry out
Chemical cleaning is to guarantee the cleaning on surface, so that it is guaranteed that the quality of subsequent epitaxial structure, the lining during chip production for another example
Bottom reduction process, the substrate after being thinned need to carry out surface chemistry cleaning before carrying out back surface ohmic contacts electrode vapor deposition to protect
Evaporating quality is demonstrate,proved, it is more serious to will lead to electrode delamination if surface cannot keep cleaning and will result directly in chip voltage raising.Cause
How this guarantees an important factor for clean surface of gallium arsenide substrate is as concerning device final performance in device application aspect.
Gallium arsenide substrate surface treatment method universal at present is chemical cleaning or corrosion, to remove the pollution of substrate surface
Object, impurity, organic matter, oxidation film etc., this kind of method is often time-consuming relatively long, needs certain temperature, chemical reagent, even
Special installation and technique are unfavorable for energy-saving and emission-reduction and improve production efficiency.
Chinese patent literature CN1079579C discloses a kind of semiconductor substrate cleaning method and semiconductor devices manufacturer
Substrate is mainly immersed in 60 DEG C or more pure water of low DO concentration by method, this method, needs certain soaking time, and main
It is used to remove the chemical oxide film of substrate surface, it cannot be guaranteed that the complete cleaning of substrate surface, and process includes a variety of sets
Standby component, treatment effect and inefficient is simple surface treatment method.
CN104518056A discloses a kind of preparation method of reversed polarity red-light LED, and the gallium arsenide substrate being directed to is rotten
Etching method is corroded using ammonia spirit, and this method corrosion rate is not easy to control, easily occurs corroding unclean phenomenon.
CN105382676A discloses a kind of polishing method of gallium arsenide wafer, passes through oxidant, reducing agent and mechanical throwing
Ray machine realizes that the polishing method is mainly used in in surface smoothness and the higher material of roughness requirements or device, uncomfortable
For the polishing of red-light LED gallium arsenide substrate, also it is unfavorable for improving production efficiency.
Summary of the invention
Deficiency existing for process for treating surface for existing gallium arsenide substrate, the present invention provide a kind of gallium arsenide substrate
Surface treatment method, this method is simple, has no irritating odor in easy to operate, operating process, does not use irritation chemical reagent,
It is high-efficient, gallium arsenide substrate remained on surface organic matter and various foreign particles can be effectively removed, clean substrate surface is obtained, mentions
The photoelectric properties of high product yield and device.
The surface treatment method of gallium arsenide substrate of the invention, comprising the following steps:
(1) gallium arsenide substrate is carried out thinned；
(2) by pulse laser stepless action in gallium arsenide substrate surface；
(3) gallium arsenide substrate after pulsed laser action is cleaned with deionized water；
(4) gallium arsenide substrate after cleaning deionized water is dried with hot nitrogen, obtains the gallium arsenide substrate of clean surface.
Gallium arsenide substrate is placed on slide holder in the step (2).
The wavelength of pulse laser is 248nm-1064nm, frequency 1-50Hz, energy density 0.1-10J/ in the step (2)
cm2。
Pulsed laser action is 1-10 minutes in the time of gallium arsenide substrate in the step (2).
Scavenging period in the step (3) is 1-10 minutes.
30-90 DEG C of drying temperature in the step (4), drying time is 1-10 minutes.
The method of the present invention is simple, and treatment effeciency is high, does not introduce irritation chemical reagent, only need to by pulse laser, go from
Sub- water and hot nitrogen can be realized the surface cleaning processing of gallium arsenide substrate, and treated gallium arsenide substrate surface is without organic matter, miscellaneous
Matter particle, the interfacial contact quality after ensure that subsequent metal vapor deposition, prevents that power down pole, device voltage height etc. are abnormal, mentions
High product yield and device performance ensure that surface cleanness to the greatest extent, while also improving production efficiency.
Detailed description of the invention
Fig. 1 is the pulse laser processing schematic illustration of gallium arsenide substrate of the present invention；
Wherein: 1. slide holders, 2. gallium arsenide substrates, 3. pulse laser beams.
Specific embodiment
Embodiment 1
(1) gallium arsenide substrate 2 is carried out by the thickness of technique requirement it is thinned, make its thickness meet technique requirement.GaAs
Substrate is without fixed crystal orientation and size requirement；
(2) referring to Fig. 1, gallium arsenide substrate 2 to be processed is placed on slide holder 1.Slide holder 1 not with pulse laser beam 3
Interaction occurs and gallium arsenide substrate 2 can be carried completely, no fixed shape need.
(3) adjusting pulsed laser energy density is 0.1J/cm2, optical maser wavelength 248nm, frequency 1Hz；
(4) the laser stepless action for adjusting step (3) is in gallium arsenide substrate surface, and action time 10 minutes；
(5) close pulse laser, by gallium arsenide substrate obtained by step (4) from removed on slide holder be placed in deionized water it is clear
It washes 1 minute；
(6) gallium arsenide substrate obtained by step (5) is subjected to hot nitrogen drying, 30 DEG C of drying temperature, drying time 10 minutes；
(7) gallium arsenide substrate of clean surface is obtained after drying, and carries out subsequent production.
Embodiment 2
The step of the present embodiment (1) and step (2) are the same as embodiment 1.
(3) adjusting pulsed laser energy density is 4.5J/cm2, optical maser wavelength 532nm, frequency 20Hz；
(4) step (3) are adjusted into the laser stepless action that finishes in gallium arsenide substrate surface, action time 7 minutes；
(5) close pulse laser, by gallium arsenide substrate obtained by step (4) from removed on slide holder be placed in deionized water it is clear
It washes 5 minutes；
(6) gallium arsenide substrate obtained by step (5) is subjected to hot nitrogen drying, 60 DEG C of drying temperature, drying time 5 minutes；
(7) gallium arsenide substrate of clean surface is obtained after drying, and carries out subsequent production.
Embodiment 3
The step of the present embodiment (1) and step (2) are the same as embodiment 1.
(3) adjusting pulsed laser energy density is 10J/cm2, optical maser wavelength 1024nm, frequency 30Hz；
(4) step (3) are adjusted into the laser stepless action that finishes in gallium arsenide substrate surface, action time 4 minutes；
(5) close pulse laser, by gallium arsenide substrate obtained by step (4) from removed on slide holder be placed in deionized water it is clear
It washes 10 minutes；
(6) gallium arsenide substrate obtained by step (5) is subjected to hot nitrogen drying, 90 DEG C of drying temperature, drying time 1 minute；
(7) gallium arsenide substrate of clean surface is obtained after drying, and carries out subsequent production.
Embodiment 4
The step of the present embodiment (1) and step (2) are the same as embodiment 1.
(3) adjusting pulsed laser energy density is 8.3J/cm2, optical maser wavelength 1024nm, frequency 50Hz；
(4) step (3) are adjusted into the laser stepless action that finishes in gallium arsenide substrate surface, action time 3 minutes；
(5) close pulse laser, by gallium arsenide substrate obtained by step (4) from removed on slide holder be placed in deionized water it is clear
It washes 8 minutes；
(6) gallium arsenide substrate obtained by step (5) is subjected to hot nitrogen drying, 75 DEG C of drying temperature, drying time 7 minutes；
(7) gallium arsenide substrate of clean surface is obtained after drying, and carries out subsequent production.
Claims (9)
1. a kind of surface treatment method of gallium arsenide substrate, characterized in that the following steps are included:
(1) gallium arsenide substrate is carried out thinned；
(2) by pulse laser stepless action in gallium arsenide substrate surface；
(3) gallium arsenide substrate after pulsed laser action is cleaned with deionized water；
(4) gallium arsenide substrate after cleaning deionized water is dried with hot nitrogen, obtains the gallium arsenide substrate of clean surface.
2. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: arsenic in the step (2)
Gallium substrate is placed on slide holder.
3. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: pulse in the step (2)
The wavelength of laser is 248nm-1064nm.
4. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: pulse in the step (2)
The frequency 1-50Hz of laser.
5. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: pulse in the step (2)
The energy density 0.1-10J/cm of laser2。
6. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: pulse in the step (2)
Laser action is 1-10 minutes in the time of gallium arsenide substrate.
7. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: clear in the step (3)
Washing the time is 1-10 minutes.
8. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: the baking in the step (4)
Dry temperature is 30-90 DEG C.
9. the surface treatment method of gallium arsenide substrate according to claim 1, it is characterized in that: the baking in the step (4)
The dry time is 1-10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710504108.8A CN109148259A (en) | 2017-06-27 | 2017-06-27 | A kind of surface treatment method of gallium arsenide substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710504108.8A CN109148259A (en) | 2017-06-27 | 2017-06-27 | A kind of surface treatment method of gallium arsenide substrate |
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| Publication Number | Publication Date |
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| CN109148259A true CN109148259A (en) | 2019-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710504108.8A Pending CN109148259A (en) | 2017-06-27 | 2017-06-27 | A kind of surface treatment method of gallium arsenide substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435418A (en) * | 2023-06-13 | 2023-07-14 | 南昌凯捷半导体科技有限公司 | A kind of 590nm reverse polarity LED epitaxial wafer and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101063830A (en) * | 2006-04-28 | 2007-10-31 | Asml荷兰有限公司 | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
| CN101174667A (en) * | 1998-08-03 | 2008-05-07 | 密苏里大学 | oxide film on substrate |
| CN102427034A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院微电子研究所 | Method for carrying out mirror polishing and thinning on ultrathin GaAs wafer |
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| CN106340447A (en) * | 2016-10-25 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | Chemical polishing method for gallium arsenide substrate |
-
2017
- 2017-06-27 CN CN201710504108.8A patent/CN109148259A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174667A (en) * | 1998-08-03 | 2008-05-07 | 密苏里大学 | oxide film on substrate |
| CN101063830A (en) * | 2006-04-28 | 2007-10-31 | Asml荷兰有限公司 | Methods to clean a surface, a device manufacturing method, a cleaning assembly, cleaning apparatus, and lithographic apparatus |
| CN102427034A (en) * | 2011-11-23 | 2012-04-25 | 中国科学院微电子研究所 | Method for carrying out mirror polishing and thinning on ultrathin GaAs wafer |
| CN104269740A (en) * | 2014-09-23 | 2015-01-07 | 中国科学院半导体研究所 | Laser and manufacturing method thereof |
| CN106340447A (en) * | 2016-10-25 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | Chemical polishing method for gallium arsenide substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116435418A (en) * | 2023-06-13 | 2023-07-14 | 南昌凯捷半导体科技有限公司 | A kind of 590nm reverse polarity LED epitaxial wafer and preparation method thereof |
| CN116435418B (en) * | 2023-06-13 | 2023-08-25 | 南昌凯捷半导体科技有限公司 | 590nm reversed-polarity LED epitaxial wafer and preparation method thereof |
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Application publication date: 20190104 |