CN109067373A - A kind of radio-frequency amplifier circuit - Google Patents
A kind of radio-frequency amplifier circuit Download PDFInfo
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- CN109067373A CN109067373A CN201810646798.5A CN201810646798A CN109067373A CN 109067373 A CN109067373 A CN 109067373A CN 201810646798 A CN201810646798 A CN 201810646798A CN 109067373 A CN109067373 A CN 109067373A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
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- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention proposes a kind of radio-frequency amplifier circuit, the advantages of having had both high-performance and low-power consumption, wearable device can be applied to.The amplifier circuit is stacked on top of one another by identical N number of amplifier unit, and transistor has shared identical operating current, and effective mutual conductance is improved N times；The source negative feedback element in multiple amplifier units can be merged into one simultaneously, the Low ESR of intermediate node is realized by capacitor and inductor resonance.According to the technical solution of the present invention, amplifier circuit can realize high-gain and low-noise factor at low currents, can be realized using standard CMOS process, and chip volume is smaller, so that cost of manufacture is greatly reduced.
Description
Technical field
The present invention relates to field of signal processing more particularly to a kind of high-performance low-power-consumption radio frequencies applied to wearable device
Amplifier circuit.
Background technique
With the rapid development in Internet of Things market, the quantity and the market share of wearable electronic are also increased rapidly, intelligence
The rise of the consumer applications such as energy wrist-watch, Intelligent bracelet, wireless headset has pushed the burning hot of wearable market.However wrist-watch,
In the wireless electronic products such as bracelet, earphone, in order to realize prolonged mobile work, objectively wearable device is required lighter
Weight of equipment, the longer standby and working time, thus the demand of low-power consumption, especially to the power consumption requirements of chip, relatively
Other markets are more urgent.
In wearable device, since its mould packet size is smaller, antenna distance human body is closer, and human body is to compare
The conductor of antenna size bulky, when wearable device is close to human body, antenna efficiency thereon will receive serious influence.
Although the wearable device such as isometric diminution of wrist-watch bracelet is obviously improved the usage experience of consumer, works as and set
When standby size reduction, the performance of antenna, which also will receive, to be seriously affected.Therefore, right in the miniature wearable device close to human body
There is higher harsher requirement in the performance for receiving transmitting chip.In order to improve usage experience, in the receiving mode, can wear
The antenna end for wearing equipment uses low-noise amplifier often to improve receiving sensitivity, improve indirectly antenna reception efficiency and
Expand range of receiving, has more preferably receptivity and usage experience when close to human body；And in the transmission mode, often
Transmission power can be improved using power amplifier, while expanding communication range.
Based on above-mentioned reason, there is very high requirement for front-end amplifier in wearable device, especially defending
Under the reception pattern of the communication system of the high frequency usage such as star navigator fix, amplifier should have sufficiently high power gain and use up
Possible low noise coefficient, while needing to consume alap electric current again, this proposes pole to the technique and design of amplifier
For harsh requirement.
It is then desired to which a kind of new radio frequency amplifier framework, realizes that the high-performance low-power-consumption that can be used for wearable device is put
Big device product.
Summary of the invention
The present invention provides a kind of radio-frequency amplifier circuit, the advantages of having had both high-performance and low-power consumption, can be applied to
Wearable device.
In order to reach the object of the invention, the embodiment of the invention provides a kind of radio-frequency amplifier circuits, pass through N number of amplifier
Low-power consumption amplification is realized in cascade before and after unit, and N is the positive integer greater than 1；It is characterized by:
Each amplifier unit include: load elements, the first transistor, second transistor, source negative feedback element,
Input coupling element, output coupling element；The drain electrode of the second end connection second transistor of the load elements, second transistor
Source electrode connection the first transistor drain electrode, the source electrode of the first transistor connects the first end of the source negative feedback element, the
The grid of one transistor is connect with rf inputs by input coupling element for receiving radiofrequency signal, the grid of second transistor
Pole connects bias voltage, and the drain electrode of second transistor also passes through output coupling element and connect with RF output end for exporting through putting
Radiofrequency signal after big, the first transistor and second transistor are cascode structure；
Connection relationship between each amplifier unit specifically: the first end of the load elements of the 1st amplifier unit
Power input voltage is connected, the second end of the source negative feedback element of i-th of amplifier unit connects i+1 amplifier unit
Load elements first end, i be integer and 1≤i≤N-1, the second end of the source negative feedback element of n-th amplifier unit
Ground connection.
Another embodiment of the present invention provides a kind of radio-frequency amplifier circuit, passes through cascade before and after N number of amplifier unit
Realize low-power consumption amplification, N is the positive integer greater than 1；It is characterized by:
Each amplifier unit includes: load elements, the first transistor, second transistor, input coupling element, defeated
Coupling element out；The drain electrode of the second end connection second transistor of the load elements, the source electrode connection first of second transistor
The grid of the drain electrode of transistor, the first transistor is connect with rf inputs by input coupling element for receiving radio frequency letter
Number, the grid of second transistor connects bias voltage, and the drain electrode of second transistor also passes through output coupling element and radio frequency exports
End connection is cascode structure for exporting amplified radiofrequency signal, the first transistor and second transistor；
Connection relationship between each amplifier unit specifically: the first end of the load elements of the 1st amplifier unit
Connect power input voltage, the load of the source electrode connection i+1 amplifier unit of the first transistor of i-th of amplifier unit
The first end of element, i are integer and 1≤i≤N-1, and it is negative anti-that the source electrode of n-th amplifier unit the first transistor connects a source electrode
Present the first end of element, the second end ground connection of the source negative feedback element.
Further, the input coupling element is the electricity being connected between rf inputs and the grid of the first transistor
Container, the output coupling element are the capacitor being connected between RF output end and the drain electrode of second transistor.
Further, the rf inputs are connected in series with an input inductance, and the RF output end is also connected with one
Ground capacity.
Further, the load elements are an inductor or other sense resistance elements.
Further, the source negative feedback element is an inductor or other sense resistance elements.
Further, the grid of each second transistor is connected to the bias voltage source to match.
Further, a capacitor is connected between the first end and ground of the load elements of i+1 amplifier unit, or
One LC series resonant network of person or a LC series resonant network, so that intermediate node provides alap equivalent impedance.
Further, the value range of N is 1 N≤5 <.But it is not limited to above-mentioned value range, when supply voltage is sufficiently high
When, N can also be greater than 5.
Further, after N number of amplifier unit cascades, in addition to n-th amplifier needs source negative feedback element to mention
It is outer for input matching, source negative feedback element is not necessarily in the 1st to N-1 amplifier unit, input matching is put by the 1st completely
Big device unit provides；Source negative feedback element is Source degeneration inductance.
Scheme provided by the invention provides a kind of improved amplifier architecture, passes through identical N number of amplifier list
First the superior and the subordinate successively cascade, and have been multiplexed amplifier bias current and input pipe, and transistor effectively utilizes same operating current
Work is amplified, effective mutual conductance of N times of one-stage amplifier unit is realized, so that amplifier realizes height using low current
Amplifier gain and low-noise factor, such amplifier, can using standard CMOS process without expensive special process
To realize the high-performance low-power-consumption amplifier product that can be used for wearable device.
Further, the present invention is also by by source negative feedback element (such as the source electrode in N number of identical amplifier unit
Decaying inductance) one is merged into, such as be merged into the source negative feedback element of nethermost amplifier unit, pass through device
Merging effectively reduces chip package area and cost of manufacture while hold amplifier performance is constant.In addition, can also pass through
Capacitor and inductor resonance structure realizes the Low ESR of intermediate amplifier node, reduces a large amount of occupied by traditional decoupling capacitor
Chip area.By above scheme, the high performance amplifier architecture of low current high-gain is realized.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide to further understand technical solution of the present invention, and constitutes part of specification, with this
The embodiment of application technical solution for explaining the present invention together, does not constitute the limitation to technical solution of the present invention.
Fig. 1 is single-stage radio frequency amplifier unit and its biasing；
Fig. 2 is the radio-frequency amplifier circuit for the two-stage cascade that one embodiment of the invention provides；
Fig. 3 is the radio-frequency amplifier circuit for another two-stage cascade that one embodiment of the invention provides；
Fig. 4 is the radio-frequency amplifier circuit for the three-stage cascade that one embodiment of the invention provides；
It is to reduce volume and further improved radio-frequency amplifier circuit that Fig. 5, which is that one embodiment of the invention provides,.
Specific embodiment
The application is described in further detail with reference to the accompanying drawing, it is necessary to it is indicated herein to be, implement in detail below
Mode is served only for that the application is further detailed, and should not be understood as the limitation to the application protection scope, the field
Technical staff can make some nonessential modifications and adaptations to the application according to above-mentioned application content.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention
Embodiment be described in detail.It should be noted that in the absence of conflict, in the embodiment and embodiment in the application
Feature can mutual any combination.
As shown in Figure 1, it illustrates single-stage radio frequency amplifier unit and its biasing circuits: where amplifier unit is by defeated
Enter inductance L1, capacitance C1, Source degeneration inductance L2, N-type CMOS transistor M1 and stacked transistors M2 composition, wherein M1 is
Main transistor provides effective mutual conductance and the gain amplifier of amplifier, and M1 and M2 constitute cascode structure transistor, main to make
With being to provide higher output impedance while providing higher isolation；One end of capacitor C1 is connected with rf inputs, in addition
One end is connected with the grid of transistor M1；Rf inputs are connected in series with inductance L1, and inductance L1 provides enough passive transmissions
Gain provides the input matching of part with noise-reduction coefficient simultaneously；The source electrode of transistor M1 is connected with inductance L2, and inductance L2 is
Source negative feedback structure further decreases input equivalent noise while providing input resistant matching；Amplifier unit is born
Part is carried to be made of inductance L3, capacitor C2 and C3；The grid of transistor M2 connects bias voltage, and drain electrode is connected with load inductance L3,
It is connected to output end via capacitor C2 simultaneously, the source electrode of transistor M2 connects the drain electrode of transistor M1；Wherein the effect of L3 is to provide
The effect of sufficiently high load impedance, C2 and C3 are to provide output matching.
In above-mentioned amplifier unit, voltage gain is proportional to:
PG=A_L*GM*ROUT/2=A_L*k √ (I_D) * ROUT/2
Wherein, A_L is the passive voltage gain for inputting inductance, it is determined by input matching；GM is input transistors
The equivalent transconductance of M1, it is proportional to the square root of electric current, and ROUT is the equivalent output impedance seen in M2 drain electrode.In order to guarantee to the greatest extent
Possible high gain, effective approach are to increase effective mutual conductance GM and effective output impedance ROUT.The increase of GM can be by mentioning
High current realizes that increasing for ROUT can be realized by improving the parallel equivalent impedance of inductance L3, but excessively high ROUT can lead
It causes to export matched effective bandwidth reduction, meanwhile, excessively high ROUT causes gain and noise coefficient very sensitive to process deviation；Separately
Outer one side, is difficult to realize the inductance of high-quality-factor in existing semiconductor technology, and actual process conditions determine output
Equivalent impedance is in 500~1000 ohms, therefore the method for effectively improving gain and noise-reduction coefficient is to improve input pipe
Effective mutual conductance of M1.
Currently, improving effective mutual conductance has several realization means: 1, improving the electromobility of M1, generation using better technique
Valence is that process costs can be substantially increased；2, bias current is improved, but will lead to power consumption rising, is not suitable in wearable device.
As above analysis is it is found that the gain of above-mentioned one-stage amplifier unit is directly proportional to electric current under the conditions of prior art, noise coefficient and
Electric current is inversely proportional, and in order to reach higher gain and lower noise coefficient, unique approach is raising electric current, but wearable
In the product and market of this sensitive power consumption of equipment, it is clearly not applicable for improving electric current simply.
For this purpose, the invention proposes a kind of improved radio frequency amplifier structures to avoid the above problem, it is furthermore achieved
Amplification application in wearable device: the present invention has been multiplexed bias current, and identical N number of amplifier unit upper and lower level is stacked
Come, shares identical operating current, effective mutual conductance is improved N times, while intermediate node is realized by capacitor and inductor resonance
Low ESR, the high performance amplifier architecture of low current high-gain has been achieved.
The radio-frequency amplifier circuit for the two-stage cascade that Fig. 2 one embodiment of the invention provides, which is identical by two-stage
Amplifier unit composition.As shown in Fig. 2, junior's amplifier unit is by capacitor C1, inductance L2, load inductance L3, transistor M1
It is formed with M2 and capacitor C2；The drain electrode of the second end connection M2 of inductance L3, the drain electrode of the source electrode connection M1 of M2, the source electrode connection of M1
The other end of inductance L2, inductance L2 are grounded, and one end of capacitor C1 is connected with rf inputs, the grid of other end and transistor M1
Extremely it is connected, one end of capacitor C2 and the drain electrode of M2 connect, and other end is as RF output end；Rf inputs are connected in series with
Input inductance L1；RF output end is also connected with ground capacity C5；Wherein, M1 and M2 is cascode structure, inductance L1 and L2
It provides input to match and reduce input equivalent noise, inductance L3 provides sufficiently high load impedance, and capacitor C2 and C5 is by impedance
Transform to 50 ohm outside piece.Supervisory amplifier is by capacitor C3, inductance L5, load inductance L4, transistor M3 and M4 and capacitor
C4 composition, the first end of inductance L4 connect power input VCC, the drain electrode of the second end connection M4 of inductance L4, and the source electrode of M4 connects
Connect the drain electrode of M3, one end of the source electrode connection inductance L5 of M3, the first end of the other end connection inductance L3 of inductance L5；Capacitor C3's
One end is connected with rf inputs, and other end is connected with the grid of transistor M3；One end of capacitor C4 and the drain electrode of M4 connect,
Other end is connected to RF output end；Wherein, L5 provides input matching, and C3 provides blocking, and M3 and M4 are cascode structure,
Enlarging function is provided, L4 provides sufficiently high load impedance, and C4 is that impedance converts capacitor, and the high impedance outside piece is transformed to outside piece
50 ohmages.In addition, the grid of M2 and M4 is connected to respective bias voltage source, use is provided by corresponding bias voltage source
In the bias voltage for making normal operation (such as triode quiescent point, metal-oxide-semiconductor grid starting voltage).Each crystal
The bias voltage of pipe is not identical, and voltage needed for working normally with each pipe matches.
As can be seen that the identical operating voltage of dual-stage amplifier units shared up and down, and input inductance L1 simultaneously with C1 and
One end of C3 is connected, and such input signal enters the grid of transistor M1 and M3 simultaneously, and input mutual conductance is effectively improved two
Times, voltage gain has:
PG '=A_L*2GM* (2ROUT/2)/2=A_L*2k √ (I_D) * ROUT/2=2PG
Wherein effective mutual conductance is twice of one-stage amplifier unit, and output impedance ROUT ' is also configured as one-stage amplifier
Twice of unit, 2 times of gain available in this way are equivalent to and improve 6dB.
In amplifier architecture shown in Fig. 2, since input signal enters the input pipe of the superior and the subordinate simultaneously, the superior and the subordinate can
To regard identical two units as, although current multiplexing, all elements are all one-to-one, in which it can be seen that
Source negative feedback element L2 and L5 be it is corresponding, effect be in order to realize input matching.In order to reduce chip area, we will
L5 has moved on to lower section, therefore the numerical value of L2 needs to be original twice, and new amplifier architecture is as shown in figure 3, wherein eliminate
L5 effectively reduces the area of chip, while nor affecting on other performance parameter.
Further, above-mentioned amplifier architecture (Fig. 2-Fig. 3) can be generalized to the structures of N grades of multiplexings, can by N number of similar or
The identical amplifier unit of person is stacked on top of one another and obtains, and identical operating current is utilized in main transistor, realizes N times
Effective mutual conductance, so as to realize high performance amplifier at low currents.Also, it can will be more in N number of identical amplifier unit
A source negative feedback element (including Source degeneration inductance) merges into one, such as is merged into the source of nethermost amplifier unit
In the negative feedback component of pole, further reduces costs and retention property is constant.
A kind of radio-frequency amplifier circuit being generalized to 3 grades as illustrated in FIG. 4 passes through its voltage gain known to analysis are as follows:
PG "=A_L*3GM* (3ROUT/3)/2=A_L*3k √ (I_D) * ROUT/2=3PG
Wherein effective mutual conductance is three times of one-stage amplifier unit, and output impedance ROUT " is also configured as one-stage amplifier
Three times of unit, 3 times of gain available in this way are equivalent to and improve 10dB.
Certainly, when amplifier unit number is more and more, output impedance is also increasingly difficult to realize, the number limitation of General N
Within 5.But ground is not limited to, when supply voltage is sufficiently high, N can be sufficiently large, the maximum that desirable supply voltage can drive
Desired value within transistor number.
After N number of amplifier unit cascades up and down, Source degeneration inductance is needed in addition to being located at nethermost amplifier unit
It is outer to provide input matching, Source degeneration inductance is not necessarily in amplifier unit above, input matching is completely by the first order
Amplifier unit provides.
Further, in above-mentioned improved amplifier architecture, intermediate node needs to provide alap equivalent resistance
Anti-, otherwise supervisory radio-frequency performance will receive very big influence, and the capacitor using high capacity is an effective method, such as: Fig. 2
The intermediate node of middle L5 and L3 is connected with a ground capacity, and the intermediate node of M3 and L3 is connected with a ground capacity in Fig. 3, figure
Capacitor C5, C8 in 4.
It is also possible to coming with some shortcomings: since high capacity capacitor needs very big wafer area, improving cost, remove this
Except, effective quality factor of bulky capacitor can also decline rapidly, seriously affect radio-frequency performance.In order to cope with more harsh make
With scene, Fig. 5 shows further improved amplifier architecture, in this embodiment, it is intermediate to use the replacement of LC tuning structure
The ground capacitor of node efficiently solves simple using high capacity capacitor bring volume is excessive and performance decline is asked
Topic, as shown, replaced capacitor and inductor of the decoupling capacitor of amplifier unit intermediate node by series resonance, the resonant capacitance
Inductance can realize low-down equivalent impedance in concern frequency range, ensure that radio-frequency performance is unaffected.In addition, Resonance Neural Network
Other types of resonant network, the resonant networks such as including but not limited to LC in parallel, RLC series-parallel, π type, T-type can also be used in network.
Wherein, the resonance frequency of resonant network can be determined according to the working frequency range of used communication system, including but not limited to 2.4G,
5.2G, 5.8G, GSM frequency range, CDMA frequency range, WCDMA frequency range, LTE frequency range, Beidou frequency range, GPS frequency range etc..
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (9)
1. a kind of radio-frequency amplifier circuit realizes low-power consumption amplification by cascade before and after N number of amplifier unit, N is just greater than 1
Integer；It is characterized by:
Each amplifier unit includes: load elements, the first transistor, second transistor, source negative feedback element, input
Coupling element, output coupling element；The drain electrode of the second end connection second transistor of the load elements, the source of second transistor
Pole connects the drain electrode of the first transistor, and the source electrode of the first transistor connects the first end of the source negative feedback element, and first is brilliant
The grid of body pipe is connect with rf inputs by input coupling element for receiving radiofrequency signal, and the grid of second transistor connects
Connect bias voltage, the drain electrode of second transistor also pass through output coupling element connect with RF output end it is amplified for exporting
Radiofrequency signal, the first transistor and second transistor are cascode structure；
Connection relationship between each amplifier unit specifically: the first end of the load elements of the 1st amplifier unit connects
Power input voltage, the second end connection i+1 amplifier unit of the source negative feedback element of i-th of amplifier unit are born
The first end of element is carried, i is integer and 1≤i≤N-1, the second termination of the source negative feedback element of n-th amplifier unit
Ground.
2. radio-frequency amplifier circuit as described in claim 1, which is characterized in that the source negative feedback element is an inductance
The series component of the parallel component or inductance of device or inductance and capacitor and the parallel component or inductance of resistance and resistance, or
Inductance, capacitor, resistance parallel component.
3. radio-frequency amplifier circuit as claimed in claim 1 or 2, which is characterized in that the load cell of i+1 amplifier unit
A capacitor perhaps a LC series resonant network or a LC series resonant network are connected between the first end and ground of part.
4. radio-frequency amplifier circuit as described in claim 1, which is characterized in that the value range of N is 1 < N≤5.
5. a kind of radio-frequency amplifier circuit realizes low-power consumption amplification by cascade before and after N number of amplifier unit, N is just greater than 1
Integer；It is characterized by:
Each amplifier unit includes: load elements, the first transistor, second transistor, input coupling element, output coupling
Close element；The drain electrode of the second end connection second transistor of the load elements, the source electrode of second transistor connect first crystal
The grid of the drain electrode of pipe, the first transistor is connect with rf inputs by input coupling element for receiving radiofrequency signal, the
The grid of two-transistor connects bias voltage, and the drain electrode of second transistor also passes through output coupling element and connect with RF output end
For exporting amplified radiofrequency signal, the first transistor and second transistor are cascode structure；
Connection relationship between each amplifier unit specifically: the first end of the load elements of the 1st amplifier unit connects
Power input voltage, the load elements of the source electrode connection i+1 amplifier unit of the first transistor of i-th of amplifier unit
First end, i is integer and 1≤i≤N-1, and the source electrode of n-th amplifier unit the first transistor connects source negative feedback member
The first end of part, the second end ground connection of the source negative feedback element.
6. radio-frequency amplifier circuit as claimed in claim 5, which is characterized in that the output coupling element is to be connected to radio frequency
Capacitor between output end and the drain electrode of second transistor.
7. radio-frequency amplifier circuit as claimed in claim 5, which is characterized in that the source negative feedback element is an inductance
The series component of the parallel component or inductance of device or inductance and capacitor and the parallel component or inductance of resistance and resistance, or
Inductance, capacitor, resistance parallel component.
8. such as the described in any item radio-frequency amplifier circuits of claim 5-7, which is characterized in that when N number of amplifier unit cascades
Afterwards, in addition to n-th amplifier need source negative feedback element provide input matching other than, the 1st to the N-1 equal nothing of amplifier unit
Source negative feedback element is needed, input matching is provided by the 1st amplifier unit completely.
9. such as the described in any item radio-frequency amplifier circuits of claim 5-7, which is characterized in that i+1 amplifier unit
A capacitor perhaps a LC series resonant network or a LC parallel resonance are connected between the first end and ground of load elements
Network.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN112187187A (en) * | 2020-10-09 | 2021-01-05 | 东南大学 | Transconductance-enhanced current multiplexing low-noise amplifier applied to GNSS |
| CN115276567A (en) * | 2022-09-26 | 2022-11-01 | 电子科技大学 | Ultra-wideband cascode low-noise amplifier based on second-stage grid feedback structure |
| CN116886061A (en) * | 2023-09-06 | 2023-10-13 | 成都通量科技有限公司 | Single-ended variable gain amplifier with low additional phase shift |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
| CN112187187A (en) * | 2020-10-09 | 2021-01-05 | 东南大学 | Transconductance-enhanced current multiplexing low-noise amplifier applied to GNSS |
| CN115276567A (en) * | 2022-09-26 | 2022-11-01 | 电子科技大学 | Ultra-wideband cascode low-noise amplifier based on second-stage grid feedback structure |
| CN116886061A (en) * | 2023-09-06 | 2023-10-13 | 成都通量科技有限公司 | Single-ended variable gain amplifier with low additional phase shift |
| CN116886061B (en) * | 2023-09-06 | 2023-11-28 | 成都通量科技有限公司 | Single-ended variable gain amplifier with low additional phase shift |
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