CN108965752A - Virtual big completely trap TDI cmos imaging system based on small pixel dimension detector - Google Patents
Virtual big completely trap TDI cmos imaging system based on small pixel dimension detector Download PDFInfo
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- CN108965752A CN108965752A CN201810653030.0A CN201810653030A CN108965752A CN 108965752 A CN108965752 A CN 108965752A CN 201810653030 A CN201810653030 A CN 201810653030A CN 108965752 A CN108965752 A CN 108965752A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Virtual big completely trap TDI cmos imaging system based on small pixel dimension detector, it is related to a kind of virtual big completely trap TDI cmos imaging system based on small pixel dimension detector, it is too low in the presence of full trap charge number that the present invention solves existing small pixel, the not high problem of signal-to-noise ratio, including multispectral section of TDI cmos detector, imaging controller and external memory；Imaging controller generates the working sequence of multispectral section of TDI cmos detector, carry out the control of TDI operating mode, the multispectral image data that have passed through charge simulation domain TDI superposition for receiving multispectral section of TDI cmos detector output simultaneously carry out the superposition of numeric field TDI operating mode using external memory；The few constraint of the full trap charge number of small pixel dimension is broken through by the way of the TDI combination numeric field TDI of charge simulation domain, design the TDI cmos detector structure of regional exposure imaging, according to the control mode and data cache method of TDI integration direction and TDI stage number selection design TDI integral process, the TDI cmos image detector image-forming system of virtual big completely trap charge number is formed.
Description
Technical field
The virtual big completely trap TDI cmos imaging system based on small pixel dimension detector that the present invention relates to a kind of.
Background technique
In the AEROSPACE APPLICATION of face pixel resolution in the same manner, the reduction of pixel dimension has the advantage that corresponding coke
Away from shorter, so as to reduce the volume and weight of entire mechanical-optical setup.But directly using small pixel dimension under the prior art
Detector, the problem of bringing is the reduction that detector expires trap charge number, and the radical sign value of full trap charge is exactly maximum signal to noise ratio
Limiting value, therefore even if high signal-to-noise ratio can not be obtained under good illumination condition and high TDI series, due to detector mistake
It is early close to be saturated, therefore existing small pixel dimension application has that signal-to-noise ratio is too low.At present in the hand of smaller pixel
In machine application, generally use it is double take the photograph scheme to improve signal-to-noise ratio, another scheme is exactly cumulative by the numeric field of multiple image.
Summary of the invention
The present invention is that the existing small pixel of solution is too low in the presence of full trap charge number, and the not high problem of signal-to-noise ratio provides one kind
Virtual big completely trap TDI cmos imaging system based on small pixel dimension detector.
Virtual completely trap TDI cmos imaging system, including multispectral section of TDI CMOS spy greatly based on small pixel dimension detector
Survey device, imaging controller and external memory；The imaging controller generates the working sequence of multispectral section of TDI cmos detector,
The control of TDI operating mode is carried out, while the charge simulation domain TDI that have passed through for receiving multispectral section of TDI cmos detector output is folded
The multispectral image data added carry out the superposition of numeric field TDI operating mode using the external memory of ping-pong structure；
Setting p spectral coverage is distributed in multispectral section of TDI cmos detector edge, which includes n region, and each region is most
It realizes m grade charge simulation domain TDI operating modes greatly, and each region independent output charge of energy and carries out quantization output；M, n is
Positive integer greater than 1；
B spectral coverage pixel dimension is set as k times of p spectral coverage pixel dimension, there is only a photosensitive regions for each spectral coverage；It is described
K is the positive integer greater than 1；
When setting ground scenery by TDI cmos detector, cumulative charge u in the detector that p spectral coverage obtainsp
It is indicated with following formula are as follows:
A is the pixel area of detector, t in formulaexpFor the in-orbit row period of detector, ηλFor the cardiac wave in detector
Integral quantum efficiency in the spectral coverage of a length of λ, EO(λ) is the typical illumination of detector image planes, and h is planck constant, and c is light
Speed.
Beneficial effects of the present invention:
1, small pixel dimension is used under identical ground pixel resolution, can shorten the focal length of optical system, to contract
The volume and weight of small entire imaging system；
2, the limitation for breaking through small pixel dimension bring Grain Full trap charge number can be improved by exposing while several subregions
Equivalent full trap charge number, to signal-to-noise ratio is increased to originalTimes.
3, in integral mode, when the charge to add up in detectorNot up to visiting
Survey the full trap electron number u of device p spectral coverage single pixelmBefore, it may be assumed thatIt adopts
It is integrated with the TDI in charge simulation domain；Close to umAfterwards, it may be assumed thatJust start
It is integrated using the TDI of numeric field, can guarantee the accumulative frequency for minimizing during charge accumulation and reading noise in this way, from
And improve signal-to-noise ratio.
Detailed description of the invention
Fig. 1 is more in the virtual big completely trap TDI cmos imaging system of the present invention based on small pixel dimension detector
The structure chart of spectral coverage TDI cmos detector；
Fig. 2 is more in the virtual big completely trap TDI cmos imaging system of the present invention based on small pixel dimension detector
The structure chart of spectral coverage TDI cmos detector imaging；
Fig. 3 be it is of the present invention based on small pixel dimension detector it is virtual greatly completely in trap TDI cmos imaging system when
Integral mode schematic diagram of the TDI series needed within m grades；
Fig. 4 be it is of the present invention based on small pixel dimension detector it is virtual greatly completely in trap TDI cmos imaging system when
The TDI series needed is greater than the integral mode schematic diagram that m is less than 2m grades；
Fig. 5 be it is of the present invention based on small pixel dimension detector it is virtual greatly completely in trap TDI cmos imaging system when
The TDI series needed is greater than the integral mode schematic diagram that (n-1) m is less than nm grades.
Specific embodiment
Specific embodiment one illustrates present embodiment in conjunction with Fig. 1 to Fig. 5, based on the virtual of small pixel dimension detector
Expire trap TDI cmos imaging system greatly, mainly includes multispectral section of TDI cmos detector, imaging controller and outside in conjunction with Fig. 1
Memory.Imaging controller generates the related work timing of multispectral section of TDI cmos detector work, carries out TDI operating mode
Control, while receiving the multispectral image number that have passed through charge simulation domain TDI superposition of multispectral section of TDI cmos detector output
According to, and carry out numeric field TDI operating mode using the external memory of ping-pong structure and be superimposed.
In present embodiment, p Spectral structure divides n region (n is the positive integer greater than 1), each region at detector edge
The achievable m of maximum (m is the positive integer greater than 1) grade charge simulation domain TDI working method, and each region can independently export electricity
Lotus carries out quantization output；It can overcome the problems, such as that the full trap electron number of small pixel is low in this way, signal-to-noise ratio is improvedTimes；B composes pixel ruler
Very little is k times (k is the positive integer greater than 1) of p spectrum, and there is only a photosensitive regions for each spectral coverage.
When setting ground scenery by TDI cmos detector, cumulative charge u in the detector that p spectral coverage obtainsp
It is indicated with following formula are as follows:
In formula, A is the pixel area of detector, texpFor the in-orbit representative row period of detector, ηλFor in detector
Integral quantum efficiency in the spectral coverage of a length of λ of cardiac wave, EO(λ) is the typical illumination of detector image planes, and h is planck constant, and c is
The light velocity.
In present embodiment, in integral mode, when the charge to add up in detector
In the full trap electron number u of not up to detector p spectral coverage single pixelmBefore (i.e.), it is integrated using the TDI in charge simulation domain；Close to umAfterwards (i.e.) TDI of numeric field is just begun to use to integrate, it is can guarantee in this way in electricity
Lotus minimizes the accumulative frequency for reading noise during accumulating, to improve signal-to-noise ratio.
Illustrate that present embodiment, data buffer storage mode of the present embodiment under different TDI series are distinguished in conjunction with Fig. 3-Fig. 5
Are as follows:
(1), when the TDI series of needs is within m grades
It is wanted for two-way TDI working method according to the integration direction of TDI or from the port out1 output data on top
Port outn output data from bottom end；It does not need to carry out data buffer storage.
(2), it is less than 2m grades when the TDI series of needs is greater than m
For two-way TDI working method, exported according to the integration direction of TDI or from the port out1 and out2 on top
Data or port outn-1 and outn output data from bottom end；Need to carry out data buffer storage, and to avoid data from reading
Capped before out, using the external memory of single ping-pong structure, i.e. two capacity are that m row t column (are arranged to the pixel for p spectral coverage
Number) buffer that depth is Ι, t is the pixel number of p spectrum, and the depth Ι is set as the amount with detector output digital image data
It is identical to change digit.
(3), it is less than nm grades when the TDI series of needs is greater than (n-1) m
For two-way TDI working method, according to the integration direction of TDI or out1~outn since the port of top
Output data or outn~out1 output data since the port of bottom end；Need to carry out data buffer storage, and to avoid counting
It is capped according to before reading, using the buffer of n-1 ping-pong structure.I.e. 2 (n-1) a capacity are respectively that m row t column depth is Ι
Buffer, the quantization digit that the depth Ι is set as detector output digital image data is identical.
Present embodiment breaks through the full trap of small pixel dimension by the way of the TDI combination numeric field TDI of charge simulation domain
The few constraint of charge number devises the TDI cmos detector structure of regional exposure imaging, and according to TDI integration direction and TDI
Stage number selection devises the control mode and data cache method of TDI integral process, ultimately forms virtual big completely trap charge number
TDI cmos image detector image-forming system.
The TDI that multispectral section of TDI cmos detector uses Chang Guangchen core company developing described in present embodiment
Cmos image sensor；The external memory uses the SRAM of 3D PLUS company；The imaging controller uses
5 Series FPGA of Virtex.
Claims (3)
1. the virtual completely trap TDI cmos imaging system, including multispectral section of TDI CMOS detection greatly based on small pixel dimension detector
Device, imaging controller and external memory；It is characterized in that the imaging controller generates the work of multispectral section of TDI cmos detector
Make timing, carry out the control of TDI operating mode, while receive multispectral section of TDI cmos detector output have passed through charge simulation
The multispectral image data of domain TDI superposition carry out the superposition of numeric field TDI operating mode using the external memory of ping-pong structure；
Setting p spectral coverage is distributed in multispectral section of TDI cmos detector edge, which includes n region, and each region is maximum real
Existing m grade charge simulation domain TDI operating modes, and the independent output charge of each region energy and carry out quantization output；M, n is to be greater than
1 positive integer；
B spectral coverage pixel dimension is set as k times of p spectral coverage pixel dimension, there is only a photosensitive regions for each spectral coverage；The k is
Positive integer greater than 1；
When setting ground scenery by TDI cmos detector, cumulative charge u in the detector that p spectral coverage obtainspUse following formula
It indicates are as follows:
A is the pixel area of detector, t in formulaexpFor the in-orbit row period of detector, ηλTo be λ in detector central wavelength
Spectral coverage in integral quantum efficiency, EO(λ) is the typical illumination of detector image planes, and h is planck constant, and c is the light velocity.
2. the virtual big completely trap TDI cmos imaging system according to claim 1 based on small pixel dimension detector,
It is characterized in that；
In integral mode, when the cumulative charge of p spectral coverage in multispectral section of TDI cmos detectorWhen, umFor the full trap electron number of the single pixel of detector p spectral coverage,
It is integrated using the TDI in charge simulation domain；
When the cumulative charge of p spectral coverage in multispectral section of TDI cmos detectorWhen, it is integrated using the TDI of numeric field.
3. the virtual big completely trap TDI cmos imaging system according to claim 1 based on small pixel dimension detector,
It is characterized in that；Data buffer storage mode under different TDI series is respectively as follows:
When the TDI series of needs is within m grades:
For two-way TDI operating mode, according to the integration direction of TDI, set from the port out1 output data on top or the bottom of from
The port outn output data at end；Without data buffer storage；
When the TDI series of needs is less than within 2m grades greater than m:
Port out1 and the out2 output data from top is set according to the integration direction of TDI for two-way TDI working method,
Or port outn-1 and the outn output data from bottom end；It needs to carry out data buffer storage, be deposited using the outside of single ping-pong structure
The buffer that reservoir, i.e. two capacity are respectively m row t column and depth is Ι, depth Ι and detector output digital image data
Quantization digit is identical；
It is less than within nm grades when the TDI series of needs is greater than (n-1) m:
For two-way TDI working method, according to the integration direction of TDI, out1~outn output data since the port of top,
Or outn~out1 output data since the port of bottom end；It needs to carry out data buffer storage, using the buffering of n-1 ping-pong structure
Device；The buffer that i.e. 2 (n-1) a capacity are m row t column and depth is Ι.
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Cited By (6)
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| CN109660790A (en) * | 2018-12-14 | 2019-04-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of screening test method of TDICMOS detector |
| CN110034748A (en) * | 2019-04-12 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | The design method of TDICMOS imaging unit |
| CN110536131A (en) * | 2019-08-29 | 2019-12-03 | 中国科学院长春光学精密机械与物理研究所 | The blooming Performance Test System and test method of TDI detector |
| CN110650299A (en) * | 2019-09-09 | 2020-01-03 | 北京空间机电研究所 | Charge domain and digital domain mixed bidirectional TDI accumulation system and method |
| CN112104811A (en) * | 2020-09-21 | 2020-12-18 | 中国科学院长春光学精密机械与物理研究所 | Low-latency multi-group imaging control system |
| CN118784994A (en) * | 2024-09-12 | 2024-10-15 | 合肥埃科光电科技股份有限公司 | TDI data caching method, system, electronic equipment and storage medium |
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Application publication date: 20181207 |