CN108738236B - Method for manufacturing COF single-side flexible substrate fine circuit and product thereof - Google Patents
Method for manufacturing COF single-side flexible substrate fine circuit and product thereof Download PDFInfo
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- CN108738236B CN108738236B CN201810744246.8A CN201810744246A CN108738236B CN 108738236 B CN108738236 B CN 108738236B CN 201810744246 A CN201810744246 A CN 201810744246A CN 108738236 B CN108738236 B CN 108738236B
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- dry film
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/052—Magnetographic patterning
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
Abstract
The invention provides a method for manufacturing a COF single-sided flexible substrate fine circuit, which comprises the following steps: (1) pressing the dry film; (2) exposing the dry film by ultraviolet rays; (3) developing the dry film; (4) electroplating copper; (5) stripping the dry film; (6) etching the substrate copper layer; (7) the metallic Ni/Cr layer is etched. The invention also provides a product obtained by the preparation method. The invention adopts a semi-additive process, and can manufacture the COF flexible single-sided substrate fine circuit with the copper thickness of about 10 microns and the line width/line distance of 7 microns/7 microns by using a high-precision glass negative and a high-adhesion and high-resolution dry film.
Description
Technical Field
The invention relates to a method for manufacturing a COF single-sided flexible substrate fine circuit and a product thereof.
Background
COF (Chip on film) is a Chip which is attached to a flexible film substrate to realize the output of Chip I/O, and is widely applied to panels of electronic products such as mobile phones, televisions, ipads and the like. At present, most of the companies grasping the COF flexible substrate production technology and having mass production conditions are concentrated in korea, japan and taiwan of china, and individual domestic companies have the production capability of producing single-sided COF flexible substrates by using an etching method, but the minimum line width/line distance does not reach the level of about 10 micrometers/10 micrometers. With the rise of the panel industry, the demand of COF flexible substrates is increasing. The COF flexible substrate has a small line width/line distance, and the minimum line width/line distance of the single-sided COF flexible substrate capable of mass production in japanese korea and taiwan enterprises at present reaches about 10 micrometers/10 micrometers, so that domestic enterprises are urgently in need of improving the technical capability of the COF fine circuit.
Disclosure of Invention
The invention provides a method for manufacturing a COF single-sided flexible substrate fine circuit, which adopts a semi-additive process, and can manufacture the COF single-sided flexible substrate fine circuit with the copper thickness of about 10 microns and the line width/line distance of 7 microns/7 microns by using a high-precision glass negative and a high-adhesion high-resolution dry film.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a manufacturing method of a COF single-side flexible substrate fine circuit comprises the following steps:
(1) dry film pressing: arranging a metal Ni/Cr layer on the upper surface of the polyimide lower layer, arranging a copper layer with the thickness of 0.5 or 1 micrometer on the upper surface of the metal Ni/Cr layer to prepare a base material, and pressing the base material on the upper surface of the copper layer by vacuum pressing to form a dry film;
(2) dry film ultraviolet exposure: partially irradiating the dry film by using ultraviolet rays, polymerizing and crosslinking the part irradiated by the ultraviolet rays on the dry film to form a dry film exposed part, wherein the rest part on the dry film is a dry film unexposed part, the dry film exposed part and the dry film unexposed part are multiple and are spaced one by one in the X direction, the X-direction dimension of each dry film exposed part is 4-7 micrometers, and the X-direction dimension of each dry film unexposed part is 8-10 micrometers;
(3) dry film development: removing the unexposed part of the dry film and exposing a part of the copper layer;
(4) copper electroplating: electroplating the part of the copper layer exposed in the step (3) to form a copper electroplating layer, wherein the total thickness of the copper layer and the copper electroplating layer is 12 microns;
(5) and (3) stripping a dry film: removing all exposed portions of the dry film;
(6) etching the substrate copper layer: removing the copper layer below the exposed part of the dry film on the base material processed in the step (5) by etching;
(7) etching the metallic Ni/Cr layer: and (4) removing the metal Ni/Cr layer below the exposed part of the dry film on the base material processed in the step (6) by etching.
Preferably, in the step (1), the thickness of the metallic Ni/Cr layer is 20-30 nm.
Preferably, in the step (1), the thickness of the dry film is 15 μm.
Preferably, the step (2) is: covering a glass film on the dry film, wherein the glass film comprises transparent areas and black areas which are spaced one by one in the X direction, the X-direction size of each transparent area is 4-7 micrometers, the X-direction size of each black area is 8-10 micrometers, removing the glass film after irradiating and exposing the dry film covered with the glass film by using ultraviolet rays, the part covered by the transparent areas on the dry film is a dry film exposed part, and the part covered by the black areas on the dry film is a dry film unexposed part.
Preferably, in the step (3), the number of the transparent regions is 3, and the number of the black regions is 2.
The invention also provides a product obtained by the preparation method.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, by adopting a semi-additive process, a thin copper base material, a high-precision glass negative film and a dry film with high adhesion and high resolution are sputtered in vacuum to prepare a COF single-sided flexible substrate fine circuit with the copper thickness of about 10 micrometers and the line width/line distance of 7 micrometers/7 micrometers, wherein the optimal value of the adhesion of the dry film with high adhesion is the X-direction minimum dimension of the exposed part of the dry film, and the optimal resolution value of the dry film with high resolution is the X-direction minimum dimension of the unexposed part of the dry film; and (4) the width of the copper electroplated layers on the base material after the step (7) is the line width, the distance between the copper electroplated layers is the line distance, and because the two sides of the copper electroplated layers are etched and the width is reduced when the base material copper is etched, the X-direction size of the exposed part of the dry film is properly reduced, the X-direction size of the unexposed part of the dry film is properly increased, and the final line width and the final line distance are ensured to reach 7 micrometers.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention:
FIG. 1 is a schematic structural view of step (1) of the present invention;
FIG. 2 is a schematic structural view of step (3) of the present invention;
FIG. 3 is a schematic structural view of step (4) of the present invention;
FIG. 4 is a schematic structural view of step (6) of the present invention;
FIG. 5 is a schematic structural view of step (7) of the present invention; .
Detailed Description
The present invention will be described in detail with reference to specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
Example 1
The COF single-sided flexible substrate fine circuit is manufactured by the following steps:
(1) dry film pressing: arranging a metal Ni/Cr layer 2 with the thickness of 20 nanometers on the upper surface of the polyimide lower layer 1, arranging a copper layer 3 with the thickness of 1 micrometer on the upper surface of the metal Ni/Cr layer 2 to prepare a base material, and laminating on the upper surface of the copper layer 3 through vacuum lamination to form a dry film with the thickness of 15 micrometers;
(2) dry film ultraviolet exposure: covering a glass film on the dry film, wherein the glass film comprises transparent areas and black areas which are spaced one by one in the X direction, the X-direction size of each transparent area is 5 micrometers, the X-direction size of each black area is 9 micrometers, the glass film is removed after the dry film covered with the glass film is irradiated and exposed by ultraviolet rays, the part of the dry film covered by the transparent areas is a dry film exposed part 4, the part of the dry film covered by the black areas is a dry film unexposed part, the X-direction size of each dry film exposed part 4 is 5 micrometers, and the X-direction size of each dry film unexposed part is 9 micrometers;
(3) dry film development: removing the unexposed part of the dry film and exposing part of the copper layer 3;
(4) copper electroplating: electroplating the part of the copper layer 3 exposed in the step (3) to form a copper electroplating layer 5, wherein the total thickness of the copper layer 3 and the copper electroplating layer 5 is 12 microns;
(5) and (3) stripping a dry film: removing all dry film exposed portions 4;
(6) etching the substrate copper layer: removing the copper layer 3 below the exposed part of the dry film on the base material processed in the step (5) by etching;
(7) etching the metallic Ni/Cr layer: and (4) removing the metal Ni/Cr layer 2 below the exposed part of the dry film on the base material processed in the step (6) by etching.
In the step (3), the number of transparent regions is 3, and the number of black regions is 2.
Example 2
The difference from example 1 is: in the step (2), the X-direction size of each transparent region and the exposed portion 4 of the dry film is 4 micrometers, and the X-direction size of each black region and the unexposed portion of the dry film is 10 micrometers.
Example 3
The difference from example 1 is: in the step (1), the thickness of the copper layer 3 is 0.5 micron; in the step (2), the X-direction size of each transparent region and the exposed portion 4 of the dry film is 6 micrometers, and the X-direction size of each black region and the unexposed portion of the dry film is 8 micrometers.
Example 4
The difference from example 1 is: in the step (1), the thickness of the metal Ni/Cr layer 2 is 30 nanometers, and the thickness of the copper layer 3 is 0.5 micrometer; in the step (2), the X-direction size of each transparent region and the exposed portion 4 of the dry film is 5 micrometers, and the X-direction size of each black region and the unexposed portion of the dry film is 9 micrometers.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (3)
1. A method for manufacturing a COF single-sided flexible substrate fine circuit is characterized in that: the method comprises the following steps:
(1) dry film pressing: arranging a metal Ni/Cr layer on the upper surface of the lower polyimide layer, arranging a copper layer with the thickness of 0.5 or 1 micron on the upper surface of the metal Ni/Cr layer to prepare a base material, and pressing the base material on the upper surface of the copper layer through vacuum pressing to form a dry film, wherein the thickness of the metal Ni/Cr layer is 20 or 30 nanometers, and the thickness of the dry film is 15 microns;
(2) dry film ultraviolet exposure: covering a glass film on the dry film, wherein the glass film comprises transparent areas and black areas which are spaced one by one in the X direction, the X-direction size of each transparent area is 4-7 micrometers, the X-direction size of each black area is 8-10 micrometers, the glass film is removed after the dry film covered with the glass film is irradiated and exposed by ultraviolet rays, the part covered by the transparent areas on the dry film is a dry film exposed part, and the part covered by the black areas on the dry film is a dry film unexposed part;
(3) dry film development: removing the unexposed part of the dry film and exposing a part of the copper layer;
(4) copper electroplating: electroplating the part of the copper layer exposed in the step (3) to form a copper electroplating layer, wherein the total thickness of the copper layer and the copper electroplating layer is 12 microns;
(5) and (3) stripping a dry film: removing all exposed portions of the dry film;
(6) etching the substrate copper layer: removing the copper layer below the exposed part of the dry film on the base material processed in the step (5) by etching;
(7) etching the metallic Ni/Cr layer: and (4) removing the metal Ni/Cr layer below the exposed part of the dry film on the base material processed in the step (6) by etching.
2. The method for manufacturing a fine wiring of a COF single-sided flexible substrate according to claim 1, wherein: in the step (3), the number of the transparent areas is 3, and the number of the black areas is 2.
3. The product obtained by the production method according to any one of claims 1 to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810744246.8A CN108738236B (en) | 2018-07-06 | 2018-07-06 | Method for manufacturing COF single-side flexible substrate fine circuit and product thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810744246.8A CN108738236B (en) | 2018-07-06 | 2018-07-06 | Method for manufacturing COF single-side flexible substrate fine circuit and product thereof |
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| Publication Number | Publication Date |
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| CN108738236A CN108738236A (en) | 2018-11-02 |
| CN108738236B true CN108738236B (en) | 2020-02-07 |
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| CN201810744246.8A Active CN108738236B (en) | 2018-07-06 | 2018-07-06 | Method for manufacturing COF single-side flexible substrate fine circuit and product thereof |
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| CN116170957A (en) * | 2022-10-24 | 2023-05-26 | 东莞市湃泊科技有限公司 | PCB processing method and system for reducing patterning times |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104411106A (en) * | 2014-11-14 | 2015-03-11 | 电子科技大学 | Manufacturing method of fine circuit of printed-circuit board |
| CN106783554A (en) * | 2016-12-13 | 2017-05-31 | 深圳顺络电子股份有限公司 | The preparation method and electronic component of a kind of electronic component electrode |
| CN206564726U (en) * | 2017-02-14 | 2017-10-17 | 苏州维信电子有限公司 | The FPC with ultra fine-line that Novel dry film makes |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101360385A (en) * | 2007-07-30 | 2009-02-04 | 三星电机株式会社 | Printed circuit board and its manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104411106A (en) * | 2014-11-14 | 2015-03-11 | 电子科技大学 | Manufacturing method of fine circuit of printed-circuit board |
| CN106783554A (en) * | 2016-12-13 | 2017-05-31 | 深圳顺络电子股份有限公司 | The preparation method and electronic component of a kind of electronic component electrode |
| CN206564726U (en) * | 2017-02-14 | 2017-10-17 | 苏州维信电子有限公司 | The FPC with ultra fine-line that Novel dry film makes |
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