CN108682324B - Inorganic light emitting diode display panel and display device - Google Patents
Inorganic light emitting diode display panel and display device Download PDFInfo
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- CN108682324B CN108682324B CN201810837542.2A CN201810837542A CN108682324B CN 108682324 B CN108682324 B CN 108682324B CN 201810837542 A CN201810837542 A CN 201810837542A CN 108682324 B CN108682324 B CN 108682324B
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1334—Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
The invention discloses an inorganic light-emitting diode display panel and a display device. The display panel is divided into a display area and a non-display area surrounding the display area, and includes: a first substrate; the light-emitting device layer is arranged on one side of the first substrate and comprises a plurality of inorganic light-emitting diodes, and each inorganic light-emitting diode comprises a first electrode, a second electrode and a p-n diode electrically connected between the first electrode and the second electrode; the light transmittance adjusting module comprises a third electrode, a fourth electrode and a material layer, wherein when an electric field between the third electrode and the fourth electrode changes, the light transmittance of the material layer changes; the display area comprises a non-luminous area and a luminous area, the inorganic light emitting diode is positioned in the luminous area, and the light transmittance adjusting module is at least positioned in the non-luminous area. By the invention, the light transmittance of the display panel can be adjusted.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an inorganic light emitting diode display panel and a display device.
Background
With the development of display technology and Inorganic Light Emitting diodes, Inorganic Light Emitting diodes (leds) are used as pixels in high resolution display panels, and thus an Inorganic led display panel is realized.
However, the transmittance of the transparent display panel based on the inorganic light emitting diode in the prior art is not adjustable, which limits the application scenarios of the transparent display panel.
Disclosure of Invention
In view of this, the present invention provides an inorganic light emitting diode display panel and a display device, so as to realize the transmittance of the inorganic light emitting diode display panel is adjustable.
In one aspect, the present invention provides an inorganic light emitting diode display panel.
The invention provides an inorganic light emitting diode display panel which is divided into a display area and a non-display area surrounding the display area, and comprises: a first substrate; the light-emitting device layer is arranged on one side of the first substrate and comprises a plurality of inorganic light-emitting diodes, and each inorganic light-emitting diode comprises a first electrode, a second electrode and a p-n diode electrically connected between the first electrode and the second electrode; the light transmittance adjusting module comprises a third electrode, a fourth electrode and a material layer, wherein when an electric field between the third electrode and the fourth electrode changes, the light transmittance of the material layer changes; the display area comprises a non-luminous area and a luminous area, the inorganic light emitting diode is positioned in the luminous area, and the light transmittance adjusting module is at least positioned in the non-luminous area.
In another aspect, the present invention provides a display device.
The display device comprises any one inorganic light-emitting diode display panel provided by the invention.
Compared with the prior art, the inorganic light-emitting diode display panel and the display device provided by the invention at least realize the following beneficial effects: the display panel sets up luminousness adjustment module at the non-luminous district of display area at least, and luminousness adjustment module includes two electrodes and is located the material layer in the electric field between the two electrodes, through the pressure differential that changes two electrodes, changes electric field strength between the two electrodes, can adjust the luminousness of material layer to realize the regulation of display panel luminousness, make inorganic emitting diode display panel can be as required, be applied to the scene that needs to change to the display panel luminousness.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic top view of an inorganic light emitting diode display panel according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of an inorganic light emitting diode display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an inorganic light emitting diode display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a light transmittance adjusting module of an inorganic light emitting diode display panel according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of an inorganic light emitting diode display panel according to another embodiment of the present invention;
fig. 6 is a schematic structural diagram of a transmittance adjustment module of an inorganic light emitting diode display panel according to another embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of an inorganic light emitting diode display panel according to still another embodiment of the present invention;
FIG. 8 is a schematic diagram of a pixel circuit of an inorganic light emitting diode display panel according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of an inorganic light emitting diode display panel according to yet another embodiment of the present invention;
FIG. 10 is a schematic cross-sectional view of an inorganic light emitting diode display panel according to yet another embodiment of the present invention;
fig. 11 is a schematic structural diagram of a display device according to an embodiment of the invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Fig. 1 is a schematic top view structure diagram of an inorganic light emitting diode display panel according to an embodiment of the present invention, and fig. 2 is a schematic cross-sectional structure diagram of an inorganic light emitting diode display panel according to an embodiment of the present invention, wherein fig. 2 is a schematic cross-sectional structure diagram taken along a cross-sectional line C-C in fig. 1. In one embodiment, as shown in fig. 1 and 2, the display panel is divided into a display area AA and a non-display area BA surrounding the display area, wherein the display area AA includes a non-light-emitting area NLA and a light-emitting area LA. The display panel includes a first substrate 10, a light emitting device layer, and a light transmittance adjustment module 30.
The first substrate 10 may adopt LTPS, Oxide (IGZO) and other semiconductor TFT technologies, and the process parameters and flows of the TFT-LCD may be adopted in the manufacturing process, wherein each film layer of the first substrate 10 may be made of a transparent material. Specifically, the first substrate 10 includes a substrate and a thin film transistor array layer formed on one side of the substrate, and the thin film transistor array layer includes a plurality of thin film transistors.
The light emitting device layer is disposed on one side of the first substrate 10 and includes a plurality of inorganic light emitting diodes 20, and each of the inorganic light emitting diodes 20 is located in the light emitting region LA. Fig. 3 is a schematic structural diagram of an inorganic light emitting diode display panel according to an embodiment of the present invention, and as shown in fig. 3, an inorganic light emitting diode 20 includes a first electrode 21, a second electrode 22, and a p-n diode 23 electrically connected between the first electrode 21 and the second electrode 22. The p-n diode 23 includes a p-type semiconductor layer, a quantum well layer, and an n-type semiconductor layer, and the quantum well layer may be a single quantum well layer or a multiple quantum well layer. When a forward bias is applied to the first electrode 21 and the second electrode 22, so that a current flows through the first electrode, electrons from the n-type semiconductor layer and holes from the p-type semiconductor layer are recombined in the quantum well layer, and a single color light is emitted, so that the inorganic light emitting diode 20 emits light. The p-n diode 23 may be formed based on a group-two six material such as zinc selenide (ZnSe), zinc oxide (ZnO), or the like, or a group-three five nitride material such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), gallium phosphide (GaP), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or an alloy thereof.
Fig. 4 is a schematic structural diagram of a light transmittance adjusting module of an inorganic light emitting diode display panel according to an embodiment of the present invention, where the light transmittance adjusting module 30 is at least located in the non-light emitting region NLA and located on the same side of the first substrate 10 as the light emitting device layer, and as shown in fig. 4, the light transmittance adjusting module 30 includes a third electrode 32, a fourth electrode 31 and a material layer 33, where the third electrode 32 and the fourth electrode 34 may be formed by transparent conductive materials, and when an electric field between the third electrode and the fourth electrode changes, the light transmittance of the material layer 33 changes. Specifically, the third electrode 32 and the fourth electrode 31 are disposed on two sides of the material layer 33 to form a stacked structure, and when a voltage is applied between the third electrode 32 and the fourth electrode 31 to form a varying electric field, the light transmittance of the material layer 33 varies accordingly, such that the light transmittance of the display panel varies. Therefore, by adjusting the voltage difference between the third electrode 32 and the fourth electrode 31, the light transmittance of the display panel can be adjusted.
Optionally, the transmittance adjustment module 30 is only located in the non-light emitting region NLA and located between the sub-pixels of the same color. Optionally, the distance between sub-pixels of different colors is smaller than the distance between pixels of the same color. This allows the non-light emitting area NLA of the display panel to be fully utilized to arrange the transmittance adjustment module 30, because the transmittance adjustment module 30 also needs a certain space range and needs to be spaced from the inorganic light emitting diode. The display of the colorful picture of the display panel is mainly realized by the mixed color between the sub-pixels with different colors, therefore, the light transmittance adjusting module 30 is arranged between the same color pixels with larger distance, sufficient space can be provided for the light transmittance adjusting module, meanwhile, the light transmittance adjusting module 30 is not arranged between the sub-pixels with different colors, and the influence of the light transmittance adjusting module on the mixed color of the sub-pixels is reduced. Specifically, as shown in fig. 1, the display panel includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B, and each of the inorganic light emitting diodes 20 corresponds to one sub-pixel. In the arrangement of the sub-pixels, the sub-pixels are sequentially arranged in a first direction x to form a sub-pixel row, the color of each sub-pixel in the same sub-pixel row is the same, and the sub-pixels are sequentially arranged in a second direction y to form a sub-pixel column, wherein the same sub-pixel column comprises a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B. The regions between adjacent sub-pixel rows and the regions between adjacent sub-pixel columns are both non-light-emitting regions NLA, wherein the light transmittance adjustment module 30 is only located in the non-light-emitting regions NLA between the adjacent sub-pixel columns.
Adopt the inorganic light emitting diode display panel that this embodiment provided, at least, the luminous transmittance adjustment module is set up at the non-luminous zone of display area, the luminous transmittance adjustment module includes two electrodes and the material layer that is located the electric field between two electrodes, through the pressure differential that changes two electrodes, change electric field strength between two electrodes, can adjust the luminousness of material layer, thereby realize the regulation of display panel luminousness, make inorganic light emitting diode display panel can be as required, be applied to the scene that requires to change to the display panel luminousness. The inorganic light emitting diode has smaller size, and meanwhile, compared with the organic light emitting diode, the requirement on water and oxygen isolation is not high, so that the light transmittance adjusting module can be manufactured after the inorganic light emitting diode is arranged, and the transparent display panel is easy to manufacture. For example, the inorganic light emitting diode display panel provided in this embodiment may be applied to office glass, a showcase, and the like, and the transmittance of the office glass and the showcase may be adjusted according to different application scenarios while the display function of the office glass and the showcase is achieved.
In another embodiment, fig. 5 is a schematic cross-sectional structure view of an inorganic light emitting diode display panel according to another embodiment of the invention, and as shown in fig. 5, a light transmittance adjustment module 30 of the inorganic light emitting diode display panel according to the embodiment is simultaneously located in a light emitting area LA and a non-light emitting area NLA.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the light transmittance adjusting module covers the display area of the display panel, so that the light can be shielded through the light transmittance adjusting module under the condition that the display panel is required to be completely shielded, and the privacy of a user can be ensured.
In another embodiment, fig. 6 is a schematic structural diagram of a light transmittance adjusting module of an inorganic light emitting diode display panel according to another embodiment of the present invention, and as shown in fig. 6, in the light transmittance adjusting module 30 of the inorganic light emitting diode display panel according to the embodiment, a third electrode 32 and a fourth electrode 31 are located on the same side of a material layer 33.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the third electrode and the fourth electrode are arranged on the same layer of the material layer, which is beneficial to reducing the film layer of the display panel and realizing the lightness and thinness of the display panel.
In one embodiment, the material layer includes polymer dispersed liquid crystal, the optical axis of the small droplet formed by liquid crystal molecules is in free orientation, when light passes through the light transmittance adjusting module, the light is strongly scattered by the droplet to make the material layer in an opaque milky white state or a semitransparent state, the optical axis orientation of the liquid crystal droplet can be adjusted by adjusting the electric field between the first electrode and the second electrode, and further the light transmittance of the material layer is adjusted to realize the adjustment of the light transmittance of the display panel.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the light transmittance adjusting module can adjust the light transmittance through the optical axis orientation of the polymer dispersed liquid crystal droplets without arranging a polarizer, thereby being beneficial to the lightening and thinning of the display panel. Meanwhile, the display panel with the light transmittance adjusting module covering the display area can be shielded by the polymer dispersed liquid crystal under the condition that the display panel is required to be completely shielded, and the polymer dispersed liquid crystal can not influence the light emission of the display panel in a normal display mode.
In an embodiment, fig. 7 is a schematic cross-sectional structural view of an inorganic light emitting diode display panel according to still another embodiment of the present invention, as shown in fig. 7, a first substrate 10 includes a substrate 11, a plurality of conductive layers between the substrate and a light emitting device layer, and a plurality of insulating layers between adjacent conductive layers, the conductive layers being used to form pixel circuits of the inorganic light emitting diode display panel, wherein each inorganic light emitting diode of the light emitting device layer corresponds to one pixel circuit, each pixel circuit controls one inorganic light emitting diode to realize independent driving and lighting, the pixel circuits are respectively connected to a data line and a scan line, and the inorganic light emitting diodes of the light emitting device layer are sequentially lighted by energizing the data line in a scan line scanning manner to display an image. In the light transmittance adjusting module 30 provided in the display panel, the third electrode 32 may be prepared in the same layer as the conductive layer in the first substrate 10, the first electrode 21, or the second electrode 22, and the fourth electrode 31 is prepared separately; alternatively, the fourth electrode 31 may be prepared in the same layer as the conductive layer in the first substrate 10, the first electrode 21, or the second electrode 22, and the third electrode 32 may be prepared separately; alternatively, the third electrode 32 and the fourth electrode 31 may be both prepared in the same layer as the conductive layer in the first substrate 10, the first electrode 21, or the second electrode 22, and when the preparation in the same layer is performed, the same material may be used in the same process, or different materials may be used.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the electrode in the light transmittance adjusting module and the conductive layer of the display part of the display panel can be prepared in the same layer, so that the film layer of the display panel can be reduced, and the thickness of the display panel can be reduced.
In an embodiment, fig. 8 is a schematic diagram of a pixel circuit of an inorganic light emitting diode display panel according to an embodiment of the present invention, as shown in fig. 8, the pixel circuit includes a first thin film transistor T1, a second thin film transistor T2 and a storage capacitor Cs, wherein the first thin film transistor T1 is a selection transistor, the second thin film transistor T2 is a driving transistor, when a scan signal is received through a scan line S2, the first thin film transistor T1 is turned on, and a data signal received through a data line S1 is transmitted to a gate of the second thin film transistor T2 to charge the storage capacitor Cs. Then the second thin film transistor T2 is turned on and the power supply V is turned onDDFlows through the inorganic light emitting diode 20 to the bottom line Vss, and realizes the individual driving lighting of the inorganic light emitting diode 20. Here, referring to fig. 7, a second thin film transistor T2 is shown in fig. 7, and the second thin film transistor T2 includes a gate G, a source S, a drain D, and an active layer a. The film layers of the grid G, the source S, the drain D and the active layer A are all the secondThe conductive layers in a substrate 10, the third electrode 32 or the fourth electrode 31 can be prepared in the same layer as the conductive layers.
In an embodiment, with continued reference to fig. 7, the P-N diode 23 includes a P-type extension layer, a quantum well layer, and an N-type extension layer, the first electrode 21 is an anode of the inorganic light emitting diode 20 and is electrically connected to the P-type extension layer, the second electrode 22 is a cathode of the inorganic light emitting diode 20 and is electrically connected to the N-type extension layer, the second electrode 22 is located on a side of the first electrode 21 away from the first substrate 10, a film layer where the second electrode 22 is located is made of a transparent conductive material, and the third electrode 32 and the second electrode 22 are fabricated on the same layer and may be formed by the same material, specifically, indium tin oxide or a metal material, such as metallic silver, to achieve transparent conduction between the third electrode 32 and the second electrode 22. The fourth electrode 31 may be located on a side of the third electrode 32 close to the first substrate 10, or on a side of the third electrode 32 away from the first substrate 10, and may be prepared in the same layer as an existing conductive film layer of the display portion of the display panel, or may be prepared separately.
By using the inorganic light emitting diode display panel provided by this embodiment, the third electrode and the second electrode in the light transmittance adjusting module, that is, the cathode of the diode, are prepared in the same layer, which can reduce the film structure of the display panel, and meanwhile, the cathode of the inorganic light emitting diode is located on the light emitting side of the inorganic light emitting diode and is usually made of a transparent conductive material, and when the third electrode and the cathode are prepared in the same layer, the same material can be used in the same process, thereby reducing the process complexity.
In an embodiment, with continued reference to fig. 7 and 8, the second thin film transistor T2 of the pixel circuit includes an active layer a made of a transparent amorphous oxide semiconductor material, and the fourth electrode 31 is fabricated on the same layer as the active layer a, specifically, a film layer on which the active layer a is located may be fabricated by using indium gallium zinc oxide to realize transparent conduction of the fourth electrode 31.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the fourth electrode in the light transmittance adjusting module and the active layer of the thin film transistor in the first substrate are prepared on the same layer, so that the film layer structure of the display panel can be reduced, meanwhile, the active layer of the thin film transistor can be made of transparent conductive materials, and when the fourth electrode and the active layer are prepared on the same layer, the fourth electrode and the active layer can be prepared in the same process by adopting the same material, so that the process complexity is reduced.
In an embodiment, with reference to fig. 7, the third electrode 32 and the second electrode 22 are insulated from each other, the third electrode 32 and the second electrode 22 can respectively apply different electrical signals, and the fourth electrode 31 is electrically connected to the active layer a, such that the fourth electrode 31 and the active layer a have the same electrical signal.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the purpose of adjusting the electric field between the third electrode and the fourth electrode can be achieved by only changing the voltage signal on the third electrode, and the influence on the display process of the inorganic light-emitting diode of the display panel when the electric field between the third electrode and the fourth electrode is adjusted is avoided.
In one embodiment, with continued reference to fig. 7, the active layer a of the at least one thin film transistor T2 extends to the non-light emitting region NLA and is multiplexed as the fourth electrode 31.
By adopting the inorganic light emitting diode display panel provided by the embodiment, the active layer of the thin film transistor is extended and reused as the fourth electrode 31, so that the process complexity is further reduced.
In an embodiment, with reference to fig. 7, the material layer 33 is disposed only in the non-light-emitting region NLA and between the third electrode 32 and the fourth electrode 31.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the material layer is only positioned in the non-light-emitting area and is not arranged in the light-emitting area, the display of the inorganic light-emitting diode is not influenced, the two electrodes are positioned at the two sides of the material layer, the material layer can be positioned in an even electric field, and then the change of the light transmittance of the material layer caused by the change of the electric field is even, so that the change of the whole light transmittance of the inorganic light-emitting diode display panel is even.
In an embodiment, with reference to fig. 7, the display panel further includes a bank layer 15, the bank layer 15 is located on a side of the first electrode 21 away from the first substrate 10 and has a first opening exposing the first electrode 21, the p-n diode 23 is located in the first opening, and the second electrode 22 is located on a side of the p-n diode 23 away from the first electrode 21; the first base plate 10 includes a base plate 10 and a plurality of insulating layers on a side of the base plate 10 close to the inorganic light emitting diode 20, wherein the insulating layer between the bank layer 15 and the active layer a is named as a first insulating layer, for example, in fig. 7, the plurality of insulating layers of the first base plate 10 includes a buffer layer 12 between the base plate 11 and the conductive layer where the gate G is located, a gate insulating layer 13 between the conductive layer where the gate G is located and the conductive layer where the active layer a is located, and a planarization layer 14 on a side of the gate insulating layer 13 away from the base plate 11, wherein the planarization layer 14 is the first insulating layer between the bank layer 15 and the active layer a. The bank layer 15 and the planarization layer 14 form a second opening exposing the fourth electrode 31, and the material layer 33 is filled in the second opening.
The inorganic light-emitting diode display panel provided by the embodiment uses the bank layer and the insulating layer between the bank layer and the active layer as the retaining wall for controlling the range of the material layer, no additional retaining wall structure is needed, the complexity of the inorganic light-emitting diode display panel is reduced, and meanwhile, when the second opening of the filling material layer is formed, the second opening and the first opening for forming the inorganic light-emitting diode can be completed in the same process, so that the process complexity is further reduced.
In an embodiment, fig. 9 is a schematic cross-sectional structural view of an inorganic light emitting diode display panel according to still another embodiment of the present invention, as shown in fig. 9, a first electrode 21 is an anode of an inorganic light emitting diode 20, a second electrode 22 is a cathode of the inorganic light emitting diode 20, a film layer where the second electrode 22 is located is made of a transparent conductive material, a third electrode 32 and the second electrode 22 are prepared in the same layer, and a fourth electrode 31 is separately prepared and located on a side of a light emitting device layer away from a first substrate 10.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the fourth electrode in the light transmittance adjusting module is positioned on one side of the light-emitting device layer, which is far away from the first substrate, so that the manufacture of the first substrate and the light-emitting device layer in the display panel can not be influenced in the process flow, and the influence on the first substrate and the light-emitting device layer due to the arrangement of the light transmittance adjusting module is reduced.
In one embodiment, with continued reference to fig. 9, the third electrode 32 is electrically connected to the second electrode 22.
By adopting the inorganic light emitting diode display panel provided by the embodiment, because the third electrode is electrically connected with the second electrode, a voltage signal can be applied to the third electrode through the second electrode, a signal line of the third electrode does not need to be additionally arranged, the complexity of the circuit of the inorganic light emitting diode display panel is reduced, meanwhile, because the fourth electrode is positioned on one side of the light emitting device layer far away from the first substrate, the change of an electric field between the third electrode and the fourth electrode is realized by applying different voltage signals to the fourth electrode, and the influence of the light transmittance adjusting module on the display function of the display panel is reduced.
In one embodiment, with continued reference to fig. 9, the second electrode 22 extends to the non-light-emitting region and is reused as the third electrode 32.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the second electrode of the inorganic light-emitting diode is extended and is reused as the third electrode, namely, the second electrode is of a whole-surface structure covering the light-emitting area and the non-light-emitting area, so that additional film forming and etching processes are not needed to form the patterned third electrode, and the process complexity is further reduced.
In one embodiment, with reference to fig. 9, the fourth electrode 31 extends from the non-light-emitting region to the light-emitting region, and the material layer 33 is disposed on the non-light-emitting region and the light-emitting region, i.e., covers the inorganic light emitting diode 20, and is located between the third electrode 33 and the fourth electrode 31.
By adopting the inorganic light-emitting diode display panel provided by the embodiment, the material layer is simultaneously positioned in the non-luminous area and the luminous area, the adjusting range of the light transmittance of the display panel can be increased, the two electrodes are positioned at the two sides of the material layer, the material layer can be positioned in an even electric field, and then the light transmittance of the material layer generated by the electric field change is uniform, so that the whole light transmittance of the inorganic light-emitting diode display panel is uniform.
In an embodiment, fig. 10 is a schematic cross-sectional structural view of an inorganic light emitting diode display panel according to still another embodiment of the present invention, as shown in fig. 10 and fig. 8, the second thin film transistor T2 of the pixel circuit includes an active layer a, the active layer a is made of a transparent amorphous oxide semiconductor material, the third electrode 32 is fabricated on the same layer as the active layer a, and the fourth electrode 31 is located on a side of the third electrode 32 away from the substrate 11.
In one embodiment, the inorganic light emitting diode display panel is a transparent display panel, and in particular, each film layer structure of the inorganic light emitting diode display panel is formed by a transparent material, so that in one state, the inorganic light emitting diode display panel can be in a completely transparent state in which an image is not displayed, in another case, the inorganic light emitting diode display panel can be in a semi-transparent state in which an image is displayed, and in a third state, the inorganic light emitting diode display panel can be in an opaque state in which an image is not displayed.
The foregoing is an embodiment of the inorganic light emitting diode display panel provided in the present invention, and the present invention further provides a display device, fig. 11 is a schematic structural diagram of the display device provided in the embodiment of the present invention, and as shown in fig. 11, the display device includes a housing and a display panel wrapped in the housing, and the display panel is the inorganic light emitting diode display panel provided in any one of the above embodiments, and has corresponding technical features and technical effects, which are not described herein again.
As can be seen from the above embodiments, the inorganic light emitting diode display panel and the display device provided by the present invention at least achieve the following beneficial effects:
the display panel sets up luminousness adjustment module at the non-luminous district of display area at least, and luminousness adjustment module includes two electrodes and is located the material layer in the electric field between the two electrodes, through the pressure differential that changes two electrodes, changes electric field strength between the two electrodes, can adjust the luminousness of material layer to realize the regulation of display panel luminousness, make inorganic emitting diode display panel can be as required, be applied to the scene that needs to change to the display panel luminousness.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (18)
1. An inorganic light emitting diode display panel, wherein the display panel is divided into a display area and a non-display area surrounding the display area;
the display panel includes:
a first substrate;
the light-emitting device layer is arranged on one side of the first substrate and comprises a plurality of inorganic light-emitting diodes, and each inorganic light-emitting diode comprises a first electrode, a second electrode and a p-n diode electrically connected between the first electrode and the second electrode;
the light transmittance adjusting module comprises a third electrode, a fourth electrode and a material layer, wherein when an electric field between the third electrode and the fourth electrode is changed, the light transmittance of the material layer is changed;
the display area comprises a non-luminous area and a luminous area, the inorganic light emitting diode is positioned in the luminous area, and the light transmittance adjusting module is at least positioned in the non-luminous area;
the light transmittance adjusting module is positioned between the adjacent sub-pixel columns in the non-light-emitting area and between the sub-pixels with the same color, and the distance between the sub-pixels with different colors is smaller than that between the pixels with the same color.
2. The inorganic light emitting diode display panel of claim 1,
the material layer includes polymer dispersed liquid crystal.
3. The inorganic light emitting diode display panel of claim 1,
the first substrate comprises a substrate base plate, a plurality of conducting layers positioned between the substrate base plate and the light-emitting device layer and a plurality of insulating layers positioned between the adjacent conducting layers, wherein the conducting layers are used for forming pixel circuits of the inorganic light-emitting diode display panel;
the third electrode and the plurality of conductive layers, the first electrode or the second electrode are prepared in the same layer, and/or the fourth electrode and the plurality of conductive layers, the first electrode or the second electrode are prepared in the same layer.
4. The inorganic light-emitting diode display panel according to claim 3, wherein the second electrode is a cathode, the film layer where the second electrode is located is made of a transparent conductive material, and the third electrode and the second electrode are prepared in the same layer.
5. The inorganic light emitting diode display panel of claim 4,
the transparent conductive material is indium tin oxide.
6. The inorganic light emitting diode display panel of claim 4,
the pixel circuit comprises a thin film transistor, the conducting layers comprise an active layer of the thin film transistor, and the active layer is made of a transparent amorphous oxide semiconductor material;
the fourth electrode and the active layer are prepared in the same layer.
7. The inorganic light emitting diode display panel of claim 6,
the transparent amorphous oxide semiconductor material is indium gallium zinc oxide.
8. The inorganic light emitting diode display panel of claim 6,
the third electrode and the second electrode are insulated from each other, and the fourth electrode is electrically connected to the active layer.
9. The inorganic light emitting diode display panel of claim 8, wherein the active layer of at least one of the thin film transistors extends to the non-light emitting region and is reused as the fourth electrode.
10. The inorganic light emitting diode display panel of claim 6,
the material layer is only arranged in the non-luminous area and is positioned between the third electrode and the fourth electrode.
11. The inorganic light emitting diode display panel of claim 10,
the display panel further comprises a bank layer, the bank layer is positioned on one side of the first electrode far away from the first substrate and is provided with a first opening exposing the first electrode, the p-n diode is positioned in the first opening, and the second electrode is positioned on one side of the p-n diode far away from the first electrode;
the insulating layers include a first insulating layer between the bank layer and the active layer;
the bank layer and the first insulating layer form a second opening exposing the fourth electrode, and the material layer is filled in the second opening.
12. The inorganic light emitting diode display panel of claim 4,
the fourth electrode is positioned on one side of the light-emitting device layer far away from the first substrate.
13. The inorganic light emitting diode display panel of claim 12,
the third electrode is electrically connected to the second electrode.
14. The inorganic light emitting diode display panel of claim 13,
the second electrode extends to the non-luminous area and is reused as the third electrode.
15. The inorganic light emitting diode display panel of claim 12,
the fourth electrode extends from the non-light-emitting region to the light-emitting region;
the material layer is arranged in the non-luminous area and the luminous area and is positioned between the third electrode and the fourth electrode.
16. The inorganic light emitting diode display panel of claim 3,
the pixel circuit comprises a thin film transistor, the conducting layers comprise an active layer of the thin film transistor, and the active layer is made of a transparent amorphous oxide semiconductor material;
the third electrode and the active layer are prepared in the same layer.
17. The inorganic light emitting diode display panel of claim 1,
the display panel is a transparent display panel.
18. A display device comprising the inorganic light-emitting diode display panel according to any one of claims 1 to 17.
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| CN110299085B (en) * | 2019-06-28 | 2021-08-10 | 上海天马微电子有限公司 | Display panel and display device |
| CN110752311B (en) * | 2019-10-29 | 2022-03-11 | 武汉天马微电子有限公司 | Display panel and display device |
| CN110767840B (en) * | 2019-10-30 | 2022-04-26 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111965893A (en) * | 2020-08-07 | 2020-11-20 | 武汉华星光电技术有限公司 | Display device and preparation method thereof |
| CN112447785B (en) * | 2020-11-23 | 2022-09-23 | 厦门天马微电子有限公司 | Light emitting diode display panel, preparation method thereof and display device |
| CN113097281A (en) * | 2021-03-31 | 2021-07-09 | 合肥维信诺科技有限公司 | Display panel and display device |
| TWI796932B (en) * | 2021-09-16 | 2023-03-21 | 友達光電股份有限公司 | Display apparatus |
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