CN108550451A - The manufacturing method of small size film precision resister device - Google Patents
The manufacturing method of small size film precision resister device Download PDFInfo
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- CN108550451A CN108550451A CN201810616280.7A CN201810616280A CN108550451A CN 108550451 A CN108550451 A CN 108550451A CN 201810616280 A CN201810616280 A CN 201810616280A CN 108550451 A CN108550451 A CN 108550451A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 102
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 239000011241 protective layer Substances 0.000 claims abstract description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000007639 printing Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 238000009713 electroplating Methods 0.000 claims description 16
- 239000011265 semifinished product Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 3
- 238000010410 dusting Methods 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012769 bulk production Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 2
- 238000007373 indentation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/08—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The manufacturing method of small size film precision resister device; longitudinal line of weakness (2) is uniformly carved at the back side of insulating substrate (1); and printed back electrode (3); in the front printing front electrode (5) and strip mask layer (4) of insulating substrate (1); and plating resistive layer (6), protective layer (10) and lateral conduction layer (12) are successively sputtered, then carve transverse scribes line (7)；Insulating substrate (1) successively fractures into Chip-R layering plating along longitudinal and transverse indentation and generates nickel layer (14) and tin layers (15).Insulating substrate is set to form required shape; in such a way that full wafer sputters resistive layer and sputtering protective layer; surface electrode and resistive layer is set to become an entirety; keep resistance layer pattern more intact regular, improves resistive surface heat dissipation effect, and sputter the vacuum coating compact structure formed; film surface excellent in uniform; quality precision is high and performance is stablized, and effectively reduces cost, is particularly suitable for bulk production.
Description
Technical field
The present invention relates to the fixed resister devices that IPC classification one or more layers film of H01C7/00 or coated film are constituted；
By containing or the manufacturer of fixed resister device that powdered conducting material not comprising insulating materials or powder semi-conducting material are constituted
Method, the especially manufacturing method of small size film precision resister device.
Background technology
Thin film resistor is one kind of precision resister device.The thick film patch electricity of thin film resistor and mainstream currently on the market
Resistance device is wanted to distinguish, and is a kind of chip resistor with high resistance value precision and extremely low temperature coefficient, full name in English Thin
film chip fixed resistors.Thin film resistor is that certain resistivity materials are deposited in exhausted with the method that class is evaporated
Edge material surface is made, and the general common insulating materials of this quasi-resistance is ceramic substrate.The film thickness of thick-film resistor is generally higher than 10 μ
The film thickness of m, film are less than 10 μm, mostly in less than 1 μm；Thick-film resistor generally uses silk-screen printing technique, elegance and talent thin-film electro
Resistance is using processes such as vacuum evaporation, magnetron sputterings.Thick-film resistor and film resistor are in material and technologic difference
Directly result in difference of two kinds of resistance in performance.Thick-film resistor general precision is poor, and 10%, 5%, 1% is common precision,
And film resistor can then accomplish 0.01% a ten thousandth precision, 0.1% thousand-island forest park etc..The temperature of thick-film resistor simultaneously
It is difficult control on coefficient, it is generally large, likewise, film resistor can then accomplish low-down temperature coefficient, such resistance resistance
Value varies with temperature very small, and resistance value is reliable and stable.So film resistor is usually used in all kinds of instrument and meters, and medical instrument, power supply,
Power equipment, electronic digital product etc..Temperature coefficient difference：The common usual minimum of thick-film resistor accomplishes 100ppm, and thin-film electro
The temperature coefficient minimum of resistance can reach 5ppm.Thin film resistor is that certain resistivity materials are deposited in exhausted with the method for evaporation
Edge material surface is made.
Crystalline carbon is deposited on ceramic rod skeleton and is made by carbon film resistor.Carbon film resistor is at low cost.Performance is stablized.Resistance
It is wide to be worth range.Temperature coefficient and voltage coefficient are low, are current most widely used resistors.Metal film resistor is evaporated in vacuo
Method by alloy material be deposited in ceramic rod skeleton surface.Metalfilmresistor is higher than the precision of fixed carbon resister, and stability is good, makes an uproar
Sound, temperature coefficient school largely use in instrument and meter and communication apparatus.Metal-oxide film resistor deposits one on insulating bar
Layer metal oxide.Due to itself being oxide, so high temperatures, heat shock resistance, load capacity are strong.Synthesize film electricity
Resistance obtains conductive compounds suspension on matrix, therefore is also paint film resistance.Since graininess is presented in its conductive layer
Structure, so its noise is big, precision is low, mainly manufactures high pressure, high resistant, miniature resistor with him.
It is less that Patents documents are disclosed.
201720778709.3 multiple layer film resistor of Chinese patent application, including ceramic matrix (1), metallic diaphragm
(2), oxidation film layer (3), epoxy resin layer (4) and termination electrode tin/copper coating (5)；Ceramic matrix (1) at least one side is compound
Metallic diaphragm (2), further, the spraying oxidation film layer (3) on the outside of metallic diaphragm (2), moreover, the phase in ceramic matrix (1)
There is termination electrode tin/copper coating (5) respectively to two end faces, the oxidation film layer between this two termination electrode tin/copper coating (5)
(3) there is epoxy resin layer (4) outside.Metallic diaphragm has lower temperature coefficient and good anti-noise ability, thermal stability significant
Optimization so that the thermal stability of film resistor is more preferable, and scope of initial values is wide；Meanwhile oxidation film layer make by high temperature firing it is thin
The high-temperature load ability of film resistance is strong, and becomes power-type product preferred raw material.Resistance has structural strength outstanding, no
Easy deformation and damage.
Chinese patent application 201410177963.9 discloses a kind of thin film resistor preparation method, in sequentially forming electricity on a substrate
After one resistive layer of pole figure case and covering, the inorganic protective layer that covering patterning is completed on the resistive layer in a manner of plated film,
And using the inorganic protective layer as etch the resistive layer when shade, after the completion of etched, the inorganic protective layer be not required to remove and
Retain the top for being covered in the resistive layer, after an organic protection layer re-forms above the inorganic protective layer, on the resistive layer
The rectangular protection structure at two-layer equation improves protecting effect, prevents resistance value of the resistive layer caused by outside environmental elements
Change problem.
Typical patch arrangement resistor processing procedure is as described below：
1. using high-accuracy tailored version printing machine, a pair of of backside conductive layer is formed using printing at the back side of each substrate, and
It is dried；
2. and form a pair of of surface conductive layer in the front printing of the substrate, be dried, it is conductive completing the back side
After layer and surface conductive layer, it is burnt into；
3. printing forms a resistive layer on the surface of the substrate, and is dried and is burnt into the both ends of the resistive layers
It is connected to surface conductive layer；
4. after the firing for completing the resistive layer, i.e., republishes to form a glassivation on the resistive layer, go forward side by side
Row is dry and is burnt into；
5. a pair resistive layer is modified, to be adjusted to the resistance value needed；
6. republishing a upper external protection and label layer on glassivation, and it is dried and is burnt into；
7. sequentially substrate fractures along each longitudinal broken line using special board, several strip substrates are formed, under automatic
Expect in special fixture；
8. leading carry out sputtering electrode to strip substrate-side using special board, side electrode is formed, to make front electrode
It is interconnected with backplate；
9. by each strip substrate, transversely broken line fractures, and forms multiple Chip-R unit individuals；
10. Chip-R semi-finished product are put into the electro-plating roller of electroplating bath, electro-plating roller is made to be rotated with setting speed,
The electric current of setting and under the conditions of the time, makes on front electrode, backplate and the lateral conduction layer of arrangement Chip-R semi-finished product
It is respectively formed one layer of nickel layer, then again in one layer of tin layers of the electroplating surface of nickel layer, and Chip-R is formed after over cleaning and drying.
Have the shortcomings that prominent be concentrated mainly in above-mentioned manufacturing method：For the resistance of small dimension, positive and negative is used
Printing technology, the resistance conductive band figure manufactured is more irregular, and size unevenness is presented, post laser is made to correct resistance value technique
Production difficulty is big, causes fraction defective high, and the quality characteristic of resistance is unstable, while making that the production cost is very high, it is difficult to forming amount
Production scale.
Invention content
The object of the present invention is to provide the manufacturing methods of small size film precision resister device, improve manufacturing process, improve
Product fine product rate, effectively reduces cost, and promotes scale volume production, promotes quality and ensures that product characteristic is stablized.
The purpose of the present invention will be realized by following technical measures：Steps are as follows for manufacturing method：
A. insulating substrate is prepared, is carved on the front of the insulating substrate and breaks a line and up and down white edge line；
B. longitudinal line of weakness is uniformly carved at the back side of insulating substrate；
C. in the back up backplate of insulating substrate, which is located on longitudinal line of weakness, and is burnt into；
D. in the front printing front electrode of insulating substrate, which is located on longitudinal line of weakness, and is burnt into；
E. on the front electrode of insulating substrate, strip mask layer is printed centered on longitudinal line of weakness, outside reserves portion
Divide front electrode；
F. last layer resistive layer is plated in the mode of the front sputtering of insulating substrate；
G. uniformly transverse scribes line is carved in the front of insulating substrate；
H. insulating substrate is put into high temperature roaster, carrying out aging makes strip mask layer dusting, convenient for cleaning, after cleaning
Insulating substrate front is presented clathrate and arranges preliminary morphosis；
I. radium-shine laser machine is used, resistance value adjustment is carried out to the resistive layer of insulating substrate by laser, and generate cutting line,
Resistance value is set to be adapted to required resistance value；
J. a protective layer is formed in the front printing of insulating substrate, then is dried and is burnt into；
Insulating substrate is fractureed substrate into strips, and each strip substrate is led to by the k. transverse scribes line on insulating substrate
Special board is crossed to be stacked in jig；
L. it uses vacuum sputtering stove to carry out side sputtering to each strip substrate, forms lateral conduction layer；
M. by each strip substrate, line of weakness fractures to form independent arrangement Chip-R semi-finished product along longitudinal direction；
N. Chip-R semi-finished product are put into the electro-plating roller of electroplating bath, electro-plating roller is made to be rotated with setting speed,
The electric current of setting and under the conditions of the time, makes on front electrode, backplate and the lateral conduction layer of arrangement Chip-R semi-finished product
It is respectively formed one layer of nickel layer, then again in one layer of tin layers of the electroplating surface of nickel layer, and Chip-R is formed after over cleaning and drying.
Especially, including：Insulating substrate, backplate, front electrode, resistive layer, protective layer, lateral conduction layer, nickel layer
And tin layers；There are resistive layer, resistive layer top surface to have protection in the middle part of the insulating substrate top surface of single small size film resistor after segmentation
There are front electrode in layer, resistive layer both sides respectively, have backplate respectively in insulating substrate bottom surface and front electrode corresponding position,
Insulating substrate opposite sides outer wall surface has lateral conduction layer respectively, overleaf electrode, front electrode and lateral conduction layer appearance
It is covered with nickel layer, tin layers are covered in nickel layer appearance.
Especially, there is cutting line on resistive layer.
Especially, resistive layer edge is overlapped on respectively on the front electrode corresponding edge of opposite sides, the edge of protective layer
It is coated on outside resistive layer edge.
Especially, overleaf electrode, front electrode and lateral conduction layer edge appearance are coated with nickel layer.
Especially, the front of insulating substrate is the white substrate of 65cm × 74cm.
Especially, resistance value adjustment is carried out to the resistive layer of insulating substrate together with protective layer by laser, and generates cutting
Line.
Advantages of the present invention and effect：Improve manufacturing process, using the side for carrying out multiple groove in insulating substrate front and back
Formula solves the bottleneck problem that can not be avoided in printing technology, insulating substrate is made to form required shape, meanwhile, it is sputtered using full wafer
The mode of resistive layer and sputtering protective layer makes surface electrode and resistive layer become an entirety, makes the more intact rule of resistance layer pattern
It is whole, improve resistive surface heat dissipation effect, and sputter the vacuum coating compact structure formed, film surface excellent in uniform, product
Matter precision is high and performance is stablized, and effectively reduces cost, is particularly suitable for bulk production.
Description of the drawings
Fig. 1 is the insulating substrate schematic diagram after step a in embodiment 1；
Fig. 2 is the insulating substrate schematic rear view after step b in embodiment 1；
Fig. 3 is the insulating substrate part schematic rear view after step c in embodiment 1；
Fig. 4 is the insulating substrate partial front schematic diagram after step d in embodiment 1；
Fig. 5 is the insulating substrate partial front schematic diagram after step e in embodiment 1；
Fig. 6 is the insulating substrate partial front schematic diagram after step f in embodiment 1；
Fig. 7 is the insulating substrate partial front schematic diagram after step g in embodiment 1；
Fig. 8, Fig. 9 be in embodiment 1 during step h with and subsequent insulating substrate partial front schematic diagram；
Figure 10 is the insulating substrate partial front schematic diagram after step i in embodiment 1；
Figure 11 is the strip substrate schematic diagram after step k in embodiment 1；
Figure 12 is the strip substrate schematic diagram after step l in embodiment 1；
Figure 13 is the resistance semi-finished product schematic diagram after step m in embodiment 1；
Figure 14 is the resistance semi-finished product schematic diagram after step n in embodiment 1；
Figure 15 is the cross-sectional view of resistance in embodiment 1.
Reference numeral includes：
Insulating substrate 1, backplate 3, strip mask layer 4, front electrode 5, resistive layer 6, is laterally carved longitudinal line of weakness 2
Trace line 7, preliminary morphosis 8, cutting line 9, protective layer 10, strip substrate 11, lateral conduction layer 12, Chip-R semi-finished product
13, nickel layer 14, tin layers 15.
Specific implementation mode
The present invention sputters small size film precision resister device since its small product size is small, film layer compactness is good, is easy to paste
Dress, the communication products such as each electric appliances, personal data storage, mobile phone can be widely used in, and push this electronic product into
One step minimizes.
The invention will be further described with reference to the accompanying drawings and examples.
Embodiment 1：If attached drawing 1 is to attached drawing 14, on the basis of use direction, steps are as follows for manufacturing method：
A. insulating substrate 1 is prepared, is carved on the front of the insulating substrate 1 and breaks a line and up and down white edge line；
B. longitudinal line of weakness 2 is uniformly carved at the back side of insulating substrate 1；
C. in the back up backplate 3 of insulating substrate 1, which is located on longitudinal line of weakness 2, and carries out
Firing；
D. in the front printing front electrode 5 of insulating substrate 1, which is located on longitudinal line of weakness 2, and carries out
Firing；
E. on the front electrode 5 of insulating substrate 1, strip mask layer 4 is printed centered on longitudinal line of weakness 2, outside is stayed
Go out partial elevational electrode 5；
F. last layer resistive layer 6 is plated in the mode of the front sputtering of insulating substrate 1；
G. uniformly transverse scribes line 7 is carved in the front of insulating substrate 1；
H. insulating substrate 1 is put into high temperature roaster, carrying out aging makes 4 dusting of strip mask layer, convenient for cleaning, after cleaning
The front of insulating substrate 1 clathrate be presented arrange preliminary morphosis 8；
I. radium-shine laser machine is used, resistance value adjustment is carried out to the resistive layer 6 of insulating substrate 1 by laser, and generate cutting
Line 9 makes resistance value be adapted to required resistance value；
J. a protective layer 10 is formed in the front printing of insulating substrate 1, then is dried and is burnt into；
K. the transverse scribes line on insulating substrate 1 fractures insulating substrate substrate 11 into strips, and by each strip substrate
11 are stacked to by special board in jig；
L. it uses vacuum sputtering stove to carry out side sputtering to each strip substrate 11, forms lateral conduction layer 12；
M. by each strip substrate 11, line of weakness fractures to form independent arrangement Chip-R semi-finished product 13 along longitudinal direction；
N. Chip-R semi-finished product 13 are put into the electro-plating roller of electroplating bath, electro-plating roller are made to be rotated with setting speed,
Under the conditions of the electric current of setting and time, front electrode 5, backplate 3 and the side of arrangement Chip-R semi-finished product 13 is made to lead
Electric layer 12 is respectively formed on one layer of nickel layer 14, then again in one layer of tin layers 15 of the electroplating surface of nickel layer 14, and through over cleaning and drying
After form Chip-R.
In aforementioned, the front of insulating substrate 1 is the white substrate of 65cm × 74cm.
In aforementioned, the present invention includes：Insulating substrate 1, backplate 3, front electrode 5, resistive layer 6, protective layer 10, side
Conductive layer 12, nickel layer 14 and tin layers 15.
In aforementioned, as shown in Fig. 15, there is electricity in the middle part of 1 top surface of insulating substrate of the single small size film resistor after segmentation
There are front electrode 5 in resistance layer 6,6 top surface matcoveredn 10 of resistive layer, 6 both sides of resistive layer respectively, in 1 bottom surface of insulating substrate and front
5 corresponding position of electrode has backplate 3 respectively, has lateral conduction layer 12 respectively in 1 opposite sides outer wall surface of insulating substrate,
Backplate 3, front electrode 5 and 12 appearance of lateral conduction layer are covered with nickel layer 14, and tin layers 15 are covered in 14 appearance of nickel layer.
In aforementioned, there is cutting line 9 on resistive layer 6.
In aforementioned, 6 edge of resistive layer is overlapped on respectively on 5 corresponding edge of front electrode of opposite sides, protective layer 10
Edge is coated on outside 6 edge of resistive layer.
In aforementioned, overleaf electrode 3, front electrode 5 and 12 edge appearance of lateral conduction layer are coated with nickel layer 14.
In aforementioned, resistance value adjustment is carried out by laser together to the resistive layer 6 of insulating substrate 1 with protective layer 10, and generate
Cutting line 9.
Claims (7)
1. the manufacturing method of small size film precision resister device, which is characterized in that steps are as follows for manufacturing method：
A. insulating substrate (1) is prepared, is carved on the front of the insulating substrate (1) and breaks a line and up and down white edge line；
B. longitudinal line of weakness (2) is uniformly carved at the back side of insulating substrate (1)；
C. in the back up backplate (3) of insulating substrate (1), which is located on longitudinal line of weakness (2), and
It is burnt into；
D. in the front printing front electrode (5) of insulating substrate (1), which is located on longitudinal line of weakness (2), and
It is burnt into；
E. on the front electrode (5) of insulating substrate (1), strip mask layer (4) is printed centered on longitudinal line of weakness (2), outside
Side reserves partial elevational electrode (5)；
F. last layer resistive layer (6) is plated in the mode of the front sputtering of insulating substrate (1)；
G. uniformly transverse scribes line (7) is carved in the front of insulating substrate (1)；
H. insulating substrate (1) is put into high temperature roaster, carrying out aging makes strip mask layer (4) dusting, convenient for cleaning, after cleaning
Insulating substrate (1) front clathrate be presented arrange preliminary morphosis (8)；
I. radium-shine laser machine is used, resistance value adjustment is carried out to the resistive layer (6) of insulating substrate (1) by laser, and generate cutting
Line (9), makes resistance value be adapted to required resistance value；
J. a protective layer (10) is formed in the front printing of insulating substrate (1), then is dried and is burnt into；
K. the transverse scribes line on insulating substrate (1) fractures insulating substrate substrate (11) into strips, and by each strip substrate
(11) it is stacked in jig by special board；
L. it uses vacuum sputtering stove to carry out side sputtering to each strip substrate (11), forms lateral conduction layer (12)；
M. by each strip substrate (11), line of weakness fractures to form independent arrangement Chip-R semi-finished product (13) along longitudinal direction；
N. Chip-R semi-finished product (13) are put into the electro-plating roller of electroplating bath, electro-plating roller is made to be rotated with setting speed,
The electric current of setting and under the conditions of the time, makes front electrode (5), backplate (3) and the side of arrangement Chip-R semi-finished product (13)
Face conductive layer (12) is respectively formed on one layer of nickel layer (14), then again in one layer of tin layers (15) of the electroplating surface of nickel layer (14), and passes through
Chip-R is formed after over cleaning and drying.
2. small size film precision resister device as described in claim 1, including：Insulating substrate (1), backplate (3), just
Face electrode (5), resistive layer (6), protective layer (10), lateral conduction layer (12), nickel layer (14) and tin layers (15)；It is characterized in that,
There are resistive layer (6), resistive layer (6) top surface to have guarantor in the middle part of insulating substrate (1) top surface of single small size film resistor after segmentation
There are front electrode (5) in sheath (10), resistive layer (6) both sides respectively, in insulating substrate (1) bottom surface position corresponding with front electrode (5)
Setting respectively has backplate (3), and in insulating substrate (1), opposite sides outer wall surface has lateral conduction layer (12) respectively, overleaf
Electrode (3), front electrode (5) and lateral conduction layer (12) appearance are covered with nickel layer (14), and in nickel layer (14), appearance is covered with tin layers
(15)。
3. the manufacturing method of small size film precision resister device as described in claim 1, which is characterized in that resistive layer (6)
On have cutting line (9).
4. the manufacturing method of small size film precision resister device as described in claim 1, which is characterized in that resistive layer (6)
Edge is overlapped on respectively on front electrode (5) corresponding edge of opposite sides, and the edge of protective layer (10) is coated on resistive layer (6)
Outside edge.
5. the manufacturing method of small size film precision resister device as described in claim 1, which is characterized in that overleaf electrode
(3), front electrode (5) and lateral conduction layer (12) edge appearance are coated with nickel layer (14).
6. the manufacturing method of small size film precision resister device as described in claim 1, which is characterized in that insulating substrate
(1) front is the white substrate of 65cm × 74cm.
7. the manufacturing method of small size film precision resister device as described in claim 1, which is characterized in that pass through laser pair
The resistive layer (6) of insulating substrate (1) carries out resistance value adjustment together with protective layer (10), and generates cutting line (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810616280.7A CN108550451A (en) | 2018-06-14 | 2018-06-14 | The manufacturing method of small size film precision resister device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810616280.7A CN108550451A (en) | 2018-06-14 | 2018-06-14 | The manufacturing method of small size film precision resister device |
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|---|---|
| CN108550451A true CN108550451A (en) | 2018-09-18 |
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ID=63493498
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| CN201810616280.7A Pending CN108550451A (en) | 2018-06-14 | 2018-06-14 | The manufacturing method of small size film precision resister device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341509A (en) * | 2020-03-18 | 2020-06-26 | 国巨电子（中国）有限公司 | Anti-vulcanization chip resistor and manufacturing method thereof |
| CN112820489A (en) * | 2021-02-22 | 2021-05-18 | 昆山厚声电子工业有限公司 | Improved manufacturing process for improving waterproof performance of chip film resistor |
Citations (3)
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| CN107195410A (en) * | 2017-06-14 | 2017-09-22 | 昆山厚声电子工业有限公司 | The manufacture method of flat electrodes arrayed chip resistor |
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| TW571426B (en) * | 2000-06-01 | 2004-01-11 | Yageo Corp | Manufacturing method of non-optical etched thin film resistor |
| CN106384634A (en) * | 2016-10-11 | 2017-02-08 | 西安宏星电子浆料科技有限责任公司 | Lead-free mask slurry for chip resistor |
| CN107195410A (en) * | 2017-06-14 | 2017-09-22 | 昆山厚声电子工业有限公司 | The manufacture method of flat electrodes arrayed chip resistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341509A (en) * | 2020-03-18 | 2020-06-26 | 国巨电子（中国）有限公司 | Anti-vulcanization chip resistor and manufacturing method thereof |
| CN112820489A (en) * | 2021-02-22 | 2021-05-18 | 昆山厚声电子工业有限公司 | Improved manufacturing process for improving waterproof performance of chip film resistor |
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