CN108538978A - A kind of LED epitaxial structure and its growing method that luminous efficiency can be improved - Google Patents
A kind of LED epitaxial structure and its growing method that luminous efficiency can be improved Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 37
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 38
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000007547 defect Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000001556 precipitation Methods 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006835 compression Effects 0.000 abstract description 5
- 238000007906 compression Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of LED epitaxial structures and its growing method that luminous efficiency can be improved; during growing InGaN/GaN multiple quantum well active layers; in InGaN quantum well layers and with the InGaN quantum well layers, growth has insert layer between the adjacent GaN quantum barrier layers in one side of substrate; pass through the insert layer covering protection InGaN quantum well layers; growth temperature when subsequent growth GaN quantum barrier layers can be improved; the precipitation of In components in InGaN quantum well layers can be significantly inhibited simultaneously, improve the flatness of InGaN quantum well layers and barrier layer interface；And, insert layer can offset the compression generated between InGaN quantum well layers and GaN quantum barrier layers, and then reduce the formation of defect as the ply stress compensation layer between InGaN quantum well layers and GaN quantum barrier layers, the radiation recombination efficiency of active area is improved, and then improves the luminous efficiency of LED.
Description
Technical field
The present invention relates to LED epitaxial technical fields, more specifically, are related to one kind and luminous efficiency can be improved
LED (Light Emitting Diode, light emitting diode) epitaxial structures and its growing method.
Background technology
Many advantages, such as blue green light LED has small, long lifespan, low in energy consumption, and brightness is high, easy of integrationization, it is considered to be
21 century enters general illumination field and the New Solid light source of display field, contains huge business opportunity.It is commercialized at present
Blue green light LED is all made of the alloy InGaN materials of GaN and InN as luminescent active region, by adjusting in InGaN quantum well layers
In components the transmitting of different wave length may be implemented.Since the vapour pressure ratio Ga atoms of In atoms are high, InGaN quantum well layers are grown
When, In atoms are difficult to incorporate into, therefore usually carry out low temperature life in the case where N2 is the atmosphere of main carrier gas for InGaN quantum well layers
It is long.However this growing method can introduce the reduction of crystal quality, therefore after having grown InGaN quantum well layers, reative cell can be improved
Interior temperature carries out the growth of GaN quantum barrier layers.But high growth temperature can seriously destroy the InGaN quantum well layers grown, and cause
The precipitation of its In, quality reduce.Therefore the acquisition of high In ingredient high-crystal quality multiple quantum well active layer is always LED extensions neck
The technical barrier in domain.
Invention content
In view of this, the present invention provides a kind of LED epitaxial structures and its growing method that luminous efficiency can be improved, in life
During long InGaN/GaN multiple quantum well active layers, deviate from substrate one in InGaN quantum well layers and with the InGaN quantum well layers
Growth has insert layer between the adjacent GaN quantum barrier layers in side, passes through the insert layer covering protection InGaN quantum well layers, Neng Gouti
Growth temperature when high subsequent growth GaN quantum barrier layers, while the analysis of In components in InGaN quantum well layers can be significantly inhibited
Go out, improves the flatness of InGaN quantum well layers and barrier layer interface；Also, insert layer can be used as InGaN quantum well layers and GaN
A ply stress compensation layer between quantum barrier layer offsets the compression generated between InGaN quantum well layers and GaN quantum barrier layers,
And then the formation of defect is reduced, the radiation recombination efficiency of active area is improved, and then improve the luminous efficiency of LED.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of growing method for the LED epitaxial structure that luminous efficiency can be improved, including：
One substrate is provided；
Grown buffer layer and N-type electron injecting layer successively over the substrate；
InGaN/GaN multiple quantum well active layers, the InGaN/GaN Multiple-quantums are grown on the N-type electron injecting layer
Trap active layer includes the InGaN quantum well layers and GaN quantum barrier layers of cycle growth, and positioned at the InGaN quantum well layers and with
Its growth between the adjacent GaN quantum barrier layers of the one side of substrate has insert layer；
Grow electronic barrier layer, p-type hole injection layer and ohm successively in the InGaN/GaN multiple quantum well active layers
Contact layer.
Optionally, the growth InGaN/GaN multiple quantum well active layers include：
The GaN quantum barrier layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the InGaN quantum well layers are grown on the GaN quantum barrier layers；
S33, the insert layer is grown on the InGaN quantum well layers；
S34, after repeating step S31-S33 preset times, GaN quantum barrier layers are grown in the insert layer.
Optionally, the growth InGaN/GaN multiple quantum well active layers include：
The InGaN quantum well layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the insert layer is grown on the InGaN quantum well layers；
S33, the GaN quantum barrier layers are grown in the insert layer；
S34, step S31-S33 preset times are repeated.
Optionally, the insert layer is AlxGa1-xN insert layers；Wherein, x not less than 0 and is not more than 1.
Optionally, it is grown on the InGaN quantum well layers after the insert layer and in the insert layer described in growth
Before GaN quantum barrier layers, further include：
The growth of the insert layer is interrupted, and indoor temperature will be reacted and be increased to grow the temperature of the GaN quantum barrier layers
Spend certain time.
Optionally, described to grow the insert layer on the InGaN quantum well layers and include：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first
Preset time；
When keeping the indoor temperature and pressure of the reaction constant, disconnect being passed through for the sources Al, and being passed through the sources Ga second and preset
Between.
Optionally, described to grow the insert layer on the InGaN quantum well layers and include：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first
Preset time；
It keeps the indoor pressure of reaction constant, and controls the indoor temperature linearity of reaction and be increased to default temperature
Degree disconnects being passed through for the sources Al, and is passed through the second preset time of the sources Ga.
Correspondingly, the present invention also provides a kind of LED epitaxial structures that luminous efficiency can be improved, including：
Substrate；
The buffer layer that is grown successively on the substrate, N-type electron injecting layer, InGaN/GaN multiple quantum well active layers,
Electronic barrier layer, p-type hole injection layer and ohmic contact layer；
Wherein, the InGaN/GaN multiple quantum well active layers include the InGaN quantum well layers and GaN quantum of cycle growth
Barrier layer, and grown positioned at the InGaN quantum well layers and with it between the adjacent GaN quantum barrier layers of the one side of substrate
There is insert layer.
Optionally, the insert layer is AlxGa1-xN insert layers；Wherein, x not less than 0 and is not more than 1.
Optionally, the thickness range of the insert layer is 0.5nm-3nm, including endpoint value.
Compared to the prior art, technical solution provided by the invention has at least the following advantages：
The present invention provides a kind of LED epitaxial structures and its growing method that luminous efficiency can be improved, including：One lining is provided
Bottom；Grown buffer layer and N-type electron injecting layer successively over the substrate；InGaN/ is grown on the N-type electron injecting layer
GaN multiple quantum well active layers, the InGaN/GaN multiple quantum well active layers include the InGaN quantum well layers and GaN of cycle growth
Quantum barrier layer, and positioned at the InGaN quantum well layers and with it between the adjacent GaN quantum barrier layers of the one side of substrate
Growth has insert layer；Grow electronic barrier layer, p-type hole injection layer successively in the InGaN/GaN multiple quantum well active layers
And ohmic contact layer.
As shown in the above, technical solution provided by the invention, in growth InGaN/GaN multiple quantum well active layer processes
In, have in InGaN quantum well layers and being grown between the adjacent GaN quantum barrier layers in one side of substrate with the InGaN quantum well layers
Insert layer can improve growth when subsequent growth GaN quantum barrier layers by the insert layer covering protection InGaN quantum well layers
Temperature, while the precipitation of In components in InGaN quantum well layers can be significantly inhibited, it improves InGaN quantum well layers and GaN quantum is built
The flatness of bed boundary；Also, insert layer can be mended as the ply stress between InGaN quantum well layers and GaN quantum barrier layers
Layer is repaid, offsets the compression generated between InGaN quantum well layers and GaN quantum barrier layers, and then reduce the formation of defect, raising has
The radiation recombination efficiency of source region, and then improve the luminous efficiency of LED.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of stream of the growing method for the LED epitaxial structure that luminous efficiency can be improved provided by the embodiments of the present application
Cheng Tu；
Fig. 2 a- Fig. 2 d are the corresponding structural schematic diagram of each step in Fig. 1；
Fig. 3 is a kind of period signal of growth growth InGaN/GaN multiple quantum well active layers provided by the embodiments of the present application
Figure；
Fig. 4 is to show in the period of another growth growth InGaN/GaN multiple quantum well active layers provided by the embodiments of the present application
It is intended to.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, current commercialized blue green light LED is all made of the alloy InGaN materials work of GaN and InN
For luminescent active region, the transmitting of different wave length may be implemented by adjusting the In components in InGaN quantum well layers.Due to In atoms
Vapour pressure ratio Ga atoms it is high, grow InGaN quantum well layers when, In atoms are difficult to incorporate into, thus be directed to InGaN Quantum Well
Layer usually carries out low-temperature epitaxy in the case where N2 is the atmosphere of main carrier gas.However this growing method can introduce the reduction of crystal quality,
Therefore after having grown InGaN quantum well layers, it can improve and react the growth that indoor temperature carries out GaN quantum barrier layers.But high growth temperature
The InGaN quantum well layers grown can be seriously destroyed, the precipitation of its In, quality is caused to reduce.Therefore the high crystal matter of high In ingredient
The acquisition for measuring multiple quantum well active layer is always the technical barrier in LED extensions field.
Based on this, the embodiment of the present application provides a kind of LED epitaxial structure and its growing method that luminous efficiency can be improved,
During growing InGaN/GaN multiple quantum well active layers, deviate from lining in InGaN quantum well layers and with the InGaN quantum well layers
Growth has insert layer between the adjacent GaN quantum barrier layers in bottom side, passes through the insert layer covering protection InGaN quantum well layers, energy
Growth temperature when subsequent growth GaN quantum barrier layers is enough improved, while In components in InGaN quantum well layers can be significantly inhibited
It is precipitated, improves the flatness of InGaN quantum well layers and barrier layer interface；Also, insert layer can be used as InGaN quantum well layers and
A ply stress compensation layer between GaN quantum barrier layers is offset the pressure generated between InGaN quantum well layers and GaN quantum barrier layers and is answered
Power, and then the formation of defect is reduced, the radiation recombination efficiency of active area is improved, and then improve the luminous efficiency of LED.For in realization
Purpose is stated, technical solution provided by the embodiments of the present application is as follows, specifically combines Fig. 1 to Fig. 4 to skill provided by the embodiments of the present application
Art scheme is described in detail.
Refering to what is shown in Fig. 1, being a kind of growth for the LED epitaxial structure that luminous efficiency can be improved provided by the embodiments of the present application
The flow chart of method, wherein growing method includes：
S1, a substrate is provided；
S2, over the substrate grown buffer layer and N-type electron injecting layer successively；
S3, InGaN/GaN multiple quantum well active layers, the InGaN/GaN volumes are grown on the N-type electron injecting layer
Sub- trap active layer includes the InGaN quantum well layers and GaN quantum barrier layers of cycle growth, and positioned at the InGaN quantum well layers and
Growth has insert layer between the adjacent GaN quantum barrier layers of the one side of substrate with it；
S4, grown successively in the InGaN/GaN multiple quantum well active layers electronic barrier layer, p-type hole injection layer and
Ohmic contact layer.
As shown in the above, technical solution provided by the embodiments of the present application, it is active in growth InGaN/GaN multiple quantum wells
During layer, InGaN quantum well layers and with the InGaN quantum well layers between the adjacent GaN quantum barrier layers in one side of substrate
Growth has insert layer, i.e., an insert layer, and InGaN quantum is arranged between adjacent InGaN quantum well layers and GaN quantum barrier layers
Well layer is located at close to one side of substrate, and GaN quantum barrier layers are located remotely from one side of substrate.It wherein, should by insert layer covering protection
InGaN quantum well layers can improve growth temperature when subsequent growth GaN quantum barrier layers, while can significantly inhibit InGaN amounts
The precipitation of In components in sub- well layer improves the flatness of InGaN quantum well layers and barrier layer interface；Also, insert layer can conduct
A ply stress compensation layer between InGaN quantum well layers and GaN quantum barrier layers offsets InGaN quantum well layers and GaN quantum barrier layers
Between the compression that generates, and then reduce the formation of defect, improve the radiation recombination efficiency of active area, and then improve the hair of LED
Light efficiency.
Technical solution provided by the embodiments of the present application is carried out with reference to the structural schematic diagram of specific epitaxial structure more detailed
Thin description is specifically described technical solution provided by the embodiments of the present application in conjunction with Fig. 1 and Fig. 2 a- Fig. 2 d.
With reference to shown in figure 2a, corresponding step S1 provides a substrate 100.
In one embodiment of the application, substrate provided by the present application can be Sapphire Substrate, silicon carbide substrates, silicon substrate
Deng being not particularly limited to this application.
With reference to shown in figure 2b, corresponding step S2, grown buffer layer 200 and N-type electron injecting layer successively on substrate 100
300。
In one embodiment of the application, buffer layer provided by the present application can be U-shaped GaN buffer layers, wherein buffer layer
Thickness range can be 1 μm -3 μm, including endpoint value；And N-type electron injecting layer provided by the present application can be N-type GaN
Layer, the thickness range of N-type electron injecting layer can be with 1 μm -3 μm, including endpoint value.
With reference to shown in figure 2c, it is active to grow InGaN/GaN multiple quantum wells on N-type electron injecting layer 300 by corresponding step S3
Layer 400.Wherein, InGaN/GaN multiple quantum well active layers include the InGaN quantum well layers 410 and GaN quantum barrier layers of cycle growth
430, and grown positioned at InGaN quantum well layers 410 and with it between the adjacent GaN quantum barrier layers 430 of 100 side of substrate
There is insert layer 420.
In one embodiment of the application, InGaN/GaN multiple quantum well active layers provided by the present application can grow GaN first
Quantum barrier layer and finally terminated with growing GaN quantum barrier layers, specifically, the growth InGaN/GaN multiple quantum well active layer packets
It includes：
The GaN quantum barrier layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the InGaN quantum well layers are grown on the GaN quantum barrier layers；
S33, the insert layer is grown on the InGaN quantum well layers；
S34, after repeating step S31-S33 preset times, GaN quantum barrier layers are grown in the insert layer, wherein default
Number can be 2-30, including endpoint value.
In one embodiment of the application, InGaN/GaN multiple quantum well active layers provided by the present application can be grown first
InGaN quantum well layers and finally terminated with growing GaN quantum barrier layers, specifically, the growth InGaN/GaN multiple quantum wells has
Active layer includes：
The InGaN quantum well layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the insert layer is grown on the InGaN quantum well layers；
S33, the GaN quantum barrier layers are grown in the insert layer；
S34, step S31-S33 preset times are repeated, wherein preset times can be 2-30, including endpoint value.
Specifically, can be H in main carrier gas when growth GaN quantum barrier layers2Atmosphere under, be passed through the sources Ga and ammonia, grow
Thickness range is 8nm-15nm, includes the GaN quantum barrier layers of endpoint value, react indoor growth temperature can be 800 degrees Celsius-
950 degrees Celsius, including endpoint value, it can be 150mbar-350mbar, including endpoint value to react indoor pressure, at this time V/III
Molar ratio can be 5000-30000, including endpoint value, growth time may range from 1min-15min, including endpoint
Value.
Growth GaN quantum barrier layers after need grow InGaN quantum well layers, need at this time reduce reative cell in growth temperature extremely
650 degrees Celsius -800 degrees Celsius, including endpoint value, and it is N to switch main carrier gas2, while it being passed through the sources Ga, the sources In and ammonia, it grows
Thickness range is 2nm-5nm, includes the InGaN quantum well layers of endpoint value, and the In components of InGaN quantum well layers are more than 0 and are less than
For the component of the Ga of 0.5, InGaN quantum well layer not less than 0.5 and no more than 1, it can be 150mbar- to react indoor pressure
350mbar, including endpoint value, the molar ratio of V/III can be 5000-30000, including endpoint value, growth time model at this time
Enclosing can be 1min-5min, including endpoint value.
In one embodiment of the application, the insert layer provided by the present application can be AlxGa1-xN insert layers；Wherein, x
Not less than 0 and it is not more than 1, wherein the thickness range of insert layer can be 0.5nm-3nm, including endpoint value.
(i.e. x values are further described when the embodiment of the present application is AlGaN insert layers with the insert layer of offer below
More than 0 and less than 1), wherein it is N to keep main carrier gas in reative cell2, described that described insert is grown on the InGaN quantum well layers
Entering layer includes：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first
For preset time to obtain AlN layers, the first preset time range can be 1s-60s, including endpoint value；
When keeping the indoor temperature and pressure of the reaction constant, disconnect being passed through for the sources Al, and being passed through the sources Ga second and preset
Between to obtain AlGaN insert layers on the basis of AlN layers, the second preset time range can be 1s-60s, including endpoint value.Tool
Body will react indoor growth temperature and be reduced to growth InGaN quantum well layers first refering to what is shown in Fig. 3, in t1 to the t2 stages
Temperature；In t2 to t3 stages, it is passed through the sources Ga, the sources In and ammonia (NH3), to grow InGaN quantum well layers；In t3 to t4 stages,
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia (NH3) to obtain
AlN layers；In t4 to t5 stages, keep reacting that indoor temperature and pressure is constant, disconnect being passed through for the sources Al, and be passed through the sources Ga with
AlGaN insert layers are obtained on the basis of AlN layers；In t5 to t6 stages, the growth of insert layer is interrupted, and indoor temperature will be reacted
It is increased to grow the temperature of the GaN quantum barrier layers；In t6 to t7 stages, it is passed through the sources Ga and ammonia growth GaN quantum barrier layers；This
Ammonia (NH in the process3) be continually fed into whole cycle.
Alternatively, when insert layer provided by the embodiments of the present application is AlGaN insert layers, it is N to keep main carrier gas2It is described described
The insert layer is grown on InGaN quantum well layers includes：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first
For preset time to obtain AlN layers, the first preset time range can be 1s-60s, including endpoint value；
It keeps the indoor pressure of reaction constant, and controls the indoor temperature linearity of reaction and be increased to default temperature
Degree, preset temperature can be 700 degrees Celsius -850 degrees Celsius, including endpoint value, disconnect being passed through for the sources Al, and be passed through the sources Ga second
For preset time to obtain AlGaN insert layers on the basis of AlN layers, the second preset time range can be 1s-60s, including end
Point value.Shown in Fig. 4, in t1 to the t2 stages, indoor growth temperature will be reacted first and is reduced to growth InGaN quantum
The temperature of well layer；In t2 to t3 stages, it is passed through the sources Ga, the sources In and ammonia (NH3), to grow InGaN quantum well layers；In t3 to t4
Stage keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia (NH3) with
Obtain AlN layers；It in t4 to t5 stages, keeps the indoor pressure of reaction constant, and controls the indoor temperature linearity of reaction and be increased to
Preset temperature disconnects being passed through for the sources Al, and is passed through the sources Ga to obtain AlGaN insert layers on the basis of AlN layers；In t5 to t6 ranks
Section, interrupts the growth of insert layer, and will react indoor temperature and be increased to grow the temperature of the GaN quantum barrier layers；T6 extremely
The t7 stages are passed through the sources Ga and ammonia growth GaN quantum barrier layers；Ammonia (NH during this3) be continually fed into whole cycle.
Further, technical solution provided by the embodiments of the present application grows the insertion on the InGaN quantum well layers
Before after layer and growing the GaN quantum barrier layers in the insert layer, further include：
The growth of the insert layer is interrupted, and indoor temperature will be reacted and be increased to grow the temperature of the GaN quantum barrier layers
Spend certain time.Wherein, the growth of the insert layer is being interrupted, and indoor temperature will be reacted and be increased to growth GaN quantum base
In the temperature course of layer, react what indoor temperature can linearly increase.
Wherein, the interruption of growth after the growth of AlGaN insert layers is completed and temperature-rise period and the life of high quantum barrier layer
Long temperature can effectively reduce the impurity defect in active area, improve the crystal quality of active area, and then improve the interior amount of LED
Sub- efficiency.
In the above-mentioned any one embodiment of the application, the sources Al, the sources Ga and the sources In provided by the present application can be carried by the sources MO
For.And grow GaN quantum barrier layers after and before growth InGaN quantum well layers, between can there is one linearly to cool down
Process.
In addition, in AlxGa1-xN insert layers provided by the embodiments of the present application, x can be with value for 0, and insert layer is then at this time
It (it has only been passed through the sources Ga during preparing insert layer has not prepared GaN for GaN insert layers and completed preparation insert layer, and not
The logical sources people Al)；And x values can also be 1, at this time insert layer then be AlN insert layers (i.e. during preparing insert layer only
It has only been passed through the sources Al preparation AlN to complete to prepare insert layer, and has not led to the sources people Ga；Also keep raw in reative cell that is, only executing
The temperature and pressure of the long InGaN quantum well layers is constant, is passed through the sources Al and the first preset time of ammonia to obtain AlN layers of step
Suddenly).
With reference to shown in figure 2d, corresponding step S4 grows electronics resistance successively in InGaN/GaN multiple quantum well active layers 400
Barrier 500, p-type hole injection layer 600 and ohmic contact layer 700.
In one embodiment of the application, electronic barrier layer provided by the present application can be AlGaN electronic barrier layers, thickness
It may range from 10nm-100nm, including endpoint value；P-type hole injection layer can be p-type GaN layer, and thickness range can be
5nm-500nm, including endpoint value；And the thickness range of ohmic contact layer can be 1nm-100nm, including endpoint value.
Further, LED epitaxial structure provided by the embodiments of the present application, N-type electron injecting layer and InGaN/GaN volumes
Also growth has stress release to go out between sub- trap active layer, wherein stress release layer can be InGaN stress release layers, thickness
20nm-500nm, including endpoint value are may range from, LED epitaxial structure is optimized by stress release layer.
Correspondingly, the embodiment of the present application also provides a kind of LED epitaxial structures that luminous efficiency can be improved, including：
Substrate；
The buffer layer that is grown successively on the substrate, N-type electron injecting layer, InGaN/GaN multiple quantum well active layers,
Electronic barrier layer, p-type hole injection layer and ohmic contact layer；
Wherein, the InGaN/GaN multiple quantum well active layers include the InGaN quantum well layers and GaN quantum of cycle growth
Barrier layer, and grown positioned at the InGaN quantum well layers and with it between the adjacent GaN quantum barrier layers of the one side of substrate
There is insert layer.
In one embodiment of the application, the insert layer provided by the present application is AlxGa1-xN insert layers；Wherein, x is not small
In 0 and be not more than 1.
In one embodiment of the application, the thickness range of the insert layer provided by the present application is 0.5nm-3nm, including end
Point value.
The embodiment of the present application provides a kind of LED epitaxial structure and its growing method that luminous efficiency can be improved, including：It carries
For a substrate；Grown buffer layer and N-type electron injecting layer successively over the substrate；It is grown on the N-type electron injecting layer
InGaN/GaN multiple quantum well active layers, the InGaN/GaN multiple quantum well active layers include the InGaN Quantum Well of cycle growth
Layer and GaN quantum barrier layers, and deviate from the adjacent GaN quantum of the one side of substrate positioned at the InGaN quantum well layers and with it
Growth has insert layer between barrier layer；It is empty to grow electronic barrier layer, p-type successively in the InGaN/GaN multiple quantum well active layers
Cave implanted layer and ohmic contact layer.
As shown in the above, technical solution provided by the embodiments of the present application, it is active in growth InGaN/GaN multiple quantum wells
During layer, InGaN quantum well layers and with the InGaN quantum well layers between the adjacent GaN quantum barrier layers in one side of substrate
Growth has insert layer, by the insert layer covering protection InGaN quantum well layers, when can improve subsequent growth GaN quantum barrier layers
Growth temperature, while the precipitation of In components in InGaN quantum well layers can be significantly inhibited, improve InGaN quantum well layers and base
The flatness of bed boundary；Also, insert layer can be mended as the ply stress between InGaN quantum well layers and GaN quantum barrier layers
Layer is repaid, offsets the compression generated between InGaN quantum well layers and GaN quantum barrier layers, and then reduce the formation of defect, raising has
The radiation recombination efficiency of source region, and then improve the luminous efficiency of LED.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of growing method for the LED epitaxial structure that luminous efficiency can be improved, which is characterized in that including：
One substrate is provided；
Grown buffer layer and N-type electron injecting layer successively over the substrate；
InGaN/GaN multiple quantum well active layers are grown on the N-type electron injecting layer, the InGaN/GaN multiple quantum wells has
Active layer includes the InGaN quantum well layers and GaN quantum barrier layers of cycle growth, and is carried on the back positioned at the InGaN quantum well layers and with it
There is insert layer from growth between the adjacent GaN quantum barrier layers of the one side of substrate；
Grow electronic barrier layer, p-type hole injection layer and Ohmic contact successively in the InGaN/GaN multiple quantum well active layers
Layer.
2. the growing method of the LED epitaxial structure according to claim 1 that luminous efficiency can be improved, which is characterized in that institute
Stating growth InGaN/GaN multiple quantum well active layers includes：
The GaN quantum barrier layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the InGaN quantum well layers are grown on the GaN quantum barrier layers；
S33, the insert layer is grown on the InGaN quantum well layers；
S34, after repeating step S31-S33 preset times, GaN quantum barrier layers are grown in the insert layer.
3. the growing method of the LED epitaxial structure according to claim 1 that luminous efficiency can be improved, which is characterized in that institute
Stating growth InGaN/GaN multiple quantum well active layers includes：
The InGaN quantum well layers of S31, the growth InGaN/GaN multiple quantum well active layers；
S32, the insert layer is grown on the InGaN quantum well layers；
S33, the GaN quantum barrier layers are grown in the insert layer；
S34, step S31-S33 preset times are repeated.
4. the growing method of the LED epitaxial structure according to claim 2 or 3 that luminous efficiency can be improved, which is characterized in that
The insert layer is AlxGa1-xN insert layers；Wherein, x not less than 0 and is not more than 1.
5. the growing method of the LED epitaxial structure according to claim 4 that luminous efficiency can be improved, which is characterized in that
It is grown on the InGaN quantum well layers after the insert layer and before growing the GaN quantum barrier layers in the insert layer, also
Including：
The growth of the insert layer is interrupted, and indoor temperature will be reacted and be increased to grow the temperature of the GaN quantum barrier layers.
6. the growing method of the LED epitaxial structure according to claim 4 that luminous efficiency can be improved, which is characterized in that institute
It states and grows the insert layer on the InGaN quantum well layers and include：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first is default
Time；
It keeps the indoor temperature and pressure of reaction constant, disconnects being passed through for the sources Al, and be passed through the second preset time of the sources Ga.
7. the growing method of the LED epitaxial structure according to claim 4 that luminous efficiency can be improved, which is characterized in that institute
It states and grows the insert layer on the InGaN quantum well layers and include：
It keeps the temperature and pressure of InGaN quantum well layers described in reaction indoor growing constant, is passed through the sources Al and ammonia first is default
Time；
It keeps the indoor pressure of reaction constant, and controls the indoor temperature linearity of reaction and be increased to preset temperature, break
Being passed through for the sources Al is opened, and is passed through the second preset time of the sources Ga.
8. a kind of LED epitaxial structure that luminous efficiency can be improved, which is characterized in that including：
Substrate；
Buffer layer, N-type electron injecting layer, InGaN/GaN multiple quantum well active layers, the electronics grown successively on the substrate
Barrier layer, p-type hole injection layer and ohmic contact layer；
Wherein, the InGaN/GaN multiple quantum well active layers include the InGaN quantum well layers and GaN quantum barrier layers of cycle growth,
And positioned at the InGaN quantum well layers and with its away from the one side of substrate adjacent GaN quantum barrier layers between growth have it is slotting
Enter layer.
9. the LED epitaxial structure according to claim 8 that luminous efficiency can be improved, which is characterized in that the insert layer is
AlxGa1-xN insert layers；Wherein, x not less than 0 and is not more than 1.
10. the LED epitaxial structure according to claim 8 that luminous efficiency can be improved, which is characterized in that the insert layer
Thickness range is 0.5nm-3nm, including endpoint value.
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| CN109461800A (en) * | 2018-10-16 | 2019-03-12 | 太原理工大学 | A kind of InGaN quantum dot LED epitaxial structure with strain compensating structure |
| CN109671813A (en) * | 2018-11-07 | 2019-04-23 | 华灿光电（浙江）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
| CN110518096A (en) * | 2019-07-05 | 2019-11-29 | 华灿光电(苏州）有限公司 | The preparation method of LED epitaxial slice |
| CN111900237A (en) * | 2020-08-13 | 2020-11-06 | 厦门乾照光电股份有限公司 | Ultraviolet LED chip and manufacturing method thereof |
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| CN109244202A (en) * | 2018-10-16 | 2019-01-18 | 太原理工大学 | A kind of GaN base Quantum Well LED epitaxial structure containing strain compensating structure |
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| CN111900237A (en) * | 2020-08-13 | 2020-11-06 | 厦门乾照光电股份有限公司 | Ultraviolet LED chip and manufacturing method thereof |
| CN112993099A (en) * | 2021-02-09 | 2021-06-18 | 厦门乾照光电股份有限公司 | Manufacturing method of LED chip with protective layer |
| CN114597293A (en) * | 2022-05-06 | 2022-06-07 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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Application publication date: 20180914 |