CN108475835A - frequency selective limiter - Google Patents
frequency selective limiter Download PDFInfo
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- CN108475835A CN108475835A CN201780006651.3A CN201780006651A CN108475835A CN 108475835 A CN108475835 A CN 108475835A CN 201780006651 A CN201780006651 A CN 201780006651A CN 108475835 A CN108475835 A CN 108475835A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/22—Attenuating devices
- H01P1/23—Attenuating devices using ferromagnetic material
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- Control Of Motors That Do Not Use Commutators (AREA)
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Abstract
This disclosure relates to which frequency selective limiter, has the first magnetic material (42) being arranged on the first dielectric material (44) and the tape conductor (46,66) being arranged on the magnetic material.In some embodiments, frequency selective limiter includes the second magnetic material being arranged on the tape conductor and the second dielectric material for being arranged on second magnetic material.First dielectric material and the second dielectric material can have the relative permitivity lower than the first magnetic material and the second magnetic material.In one embodiment, frequency selective limiter includes slow-wave structure, and the slow-wave structure is configured to the magnetic field generated by the electromagnetic energy for propagating through the slow-wave structure being magnetically coupled in the magnetic material.
Description
Governmental interests
The present invention is made in the case where the contract number issued by USN is the governmental support of N00173-14-C-2020.
Government has certain rights in the invention.
Cross reference to related applications
The application is that the part for the U.S. Patent application 14/077.909 submitted on November 12nd, 2013 continues application,
The full content of the U.S. Patent application is incorporated herein by reference for any and all purposes.
Technical field
The disclosure relates generally to frequency selective limiters.
Background technology
As it is known in the art, frequency selective limiter (FSL) is nonlinear passive device, make to be higher than predetermined threshold
The signal of power level is decayed, while the signal less than the threshold power level being made to pass through.A key feature of FSL is limitation
High-power frequency selectivity matter：Close low-power signal is unaffected with constrained signal frequency.In this sense,
FSL serves as high Q, and (demonstration is>1000) notch filter, automatic tuning as shown in Figure 1A, Figure 1B and Fig. 1 C to make in narrow frequency
High power signals decaying in band, Figure 1A, Figure 1B and Fig. 1 C show the frequency selectivity of typical YIG FSL；Figure 1A is shown
Frequency response to the input of FSL, Figure 1B show the transmission loss by FSL, it is noted that power level in input signal
Higher than predetermined power threshold level PTHThere is significantly decaying in the frequency component of (Figure 1A), power level is less than predetermined in input signal
Power threshold level PTHFrequency component by FSL without decaying (in addition to a small amount of loss of signal (resistance loss, impedance mismatching
Deng)), and Fig. 1 C show the output power spectrum of multiple weak signals and strong signal.For FSL, power threshold level mainly by
The configuration settings of Ferrite Material.For example, monocrystalline YIG materials are the ferrites for providing lower power threshold value compared with polycrystalline YIG
Material, and polycrystalline YIG provides lower power threshold compared to hexad ferrite material.Power-threshold value difference between these materials
Different is about 10-20dB, and wherein monocrystalline YIG provides about 0 to+10dBm lowest power threshold value.As it is known in the art, iron
Oxysome FSL depends on the nonlinear response of magnetized ferrite material.When higher than critical RF magnetic field levels, Spin precession angle
(spinprecession angle) is saturated in ferrite, and starts the coupling for occurring to higher order spin wave.It is fed to
The RF energy of FSL is efficiently couple to spin wave with approximately half of signal frequency, and is subsequently converted to heat.
The range of the threshold power level of the beginning of limitation is from magnetic static wave FSL's<It is more in -30dBm to secondary resonance FSL
Ferrite polycrystal>40dBm.The critical magnetic fields RF are directly proportional to the self-rotating wave linewidth of Ferrite Material.Usually using liquid phase epitaxy
(LPE) yttrium iron garnet (YIG), this is because it is with self-rotating wave linewidth most narrow in all measured materials, about 0.2-
0.5 oersted (Oe).This monocrystalline YIG methods provide the filter response for the minimum insertion loss of weak signal, highest Q, and
The power threshold of about 0dBm is provided --- jointly so that the material is to various applications most attraction.As shown in Fig. 2, FSL
Typical realisation includes being arranged carrying out a pair of of ground connection in the strip line microwave transmission structure of dielectric using two YIG plates or film
The magnetic energy of interference signal is coupled in magnetic material by the tape conductor between planar conductor.As shown, permanently biasing magnetic
Body is installed to the side of the structure, or can be installed to the top and bottom of the structure.Magnetic field intensity in the structure determines
The bandwidth of operation of limiter.It is wound around total to be provided on the direction perpendicular to strip line in conducting wire (not shown)
In the case of winding, electromagnet can be used.DC electric current flows through winding, to provide bias magnetic field.The biasing is selected to
Determine the bandwidth of operation of limiter.Due to being difficult to grow thick YIG film, plate thickness is usually 100 microns or thinner, this is just
About 20 microns of band-like line width is needed to realize the input impedance Z with 50 ohm of tight fits0.This method is easily fabricated
And enough magnetic field is provided, to realize the critical power level of about 0dBm when using monocrystalline YIG materials.Reduce the work(of FSL
A kind of method of rate level threshold is the strip line using input impedance relatively low (that is, being less than 50 ohm)；But this is with deterioration
Return loss is cost.Therefore, when structure lower using input impedance, improve impedance using impedance matching structure sometimes
Matching；However, This technique reduces the bandwidth of FSL and increasing insertion loss；This approach reduces with for weak signal
The associated resistance loss of transmission structure, and be slightly increased the magnetic coupling of signal and Ferrite Material.
Invention content
This disclosure relates to a kind of frequency selective limiter of the combination with magnetic material and dielectric material.Dielectric material has
There are the relative permitivity lower than magnetic material or relative dielectric constant εr, this leads to the microwave transmission line of enhancing.Implement at one
In example, this design is changed by increasing the local magnetic interaction (magnetic interaction) of signal and magnetic material
It is apt to whole frequency selective limiter (FSL) performance, to realize the lower threshold for starting required non-linear behavior.FSL can be with
It is realized with any tape conductor configuration, including but not limited to micro-strip (microstrip) configuration, strip line configuration or cofacial conformation.
Lower in power threshold, the disclosure can also use the material of lower cost (for example, instead of monocrystalline
YIG and use polycrystalline YIG), and significantly reduce and manufacture relevant complexity.In addition, proposed structure is utilized to make to insert
Enter loss and keep relatively low, and can by design variation in transmission line structure rather than change the material property of dielectric material come
Adjust FSL performance parameters.A pair of magnetic substrate is supplemented by using a pair of of low-dielectric substrate, common manufacture can be used
Technology manufactures slow wave FSL structures, without carrying out micromachined or etching to magnetic material, to realizing inexpensive solution
Scheme.
System described herein can include one or more of following characteristics in combination independently or with another feature.
In one aspect, this disclosure relates to which a kind of slow-wave structure, the slow-wave structure have Jie being arranged around magnetic material
The magnetic field generated by the electromagnetic energy for propagating through the slow-wave structure is magnetically coupled in magnetic material by the combination of electric material.Slowly
Wave structure has input impedance Z0, when electromagnetic energy propagates through slow-wave structure, impedance can be periodically from more than Z0Impedance
Become smaller than Z0Impedance.
In another aspect, this disclosure relates to the combination of magnetic material, dielectric material and slow-wave structure, dielectric material around
Magnetic material setting, slow-wave structure is configured to the magnetic field generated by the electromagnetic energy for propagating through slow-wave structure being magnetically coupled to
In ferrimagnet.In one embodiment, slow-wave structure is with input impedance Z0Transmission line.Transmission line includes that setting exists
First transmission line section between a pair of of second transmission line section.In one embodiment, the first transmission line section has
Higher than Z0Impedance ZH, the pair of second transmission line section, which has, is less than Z0Impedance.In some embodiments, the first transmission
Line section and the pair of second transmission line section respectively have than the nominal operation wave for the electromagnetic energy for propagating through slow-wave structure
The length of length.
In another aspect, this disclosure relates to include the combination of magnetic material, dielectric material and slow-wave structure, dielectric material
Material is arranged around magnetic material, and slow-wave structure is configured to the magnetic field magnetic coupling that will be generated by the electromagnetic energy for propagating through slow-wave structure
It closes in ferrimagnet.In one embodiment, slow-wave structure is with being arranged between a pair of of second transmission line section
The transmission line of first transmission line section.The first transmission line section and the pair of second transmission line section include tape conductor
And at least one ground plane conductor.Magnetic material can be arranged in the tape conductor and at least one ground plane
Between conductor.
In some embodiments, tape conductor includes that first be arranged between a pair of second tape conductor section band-like is led
Body section.First band-like conductor section can be with one of the ground plane conductor being arranged above the first band-like conductor section
Separate the first distance D1.In some embodiments, the pair of second tape conductor section and setting are the pair of second
The spaced-apart second distance D of ground plane conductor above tape conductor section2, D1And D2It is different distance.
In another aspect, this disclosure relates to which a kind of combination including magnetic material, dielectric material and slow-wave structure, is situated between
Electric material is arranged around magnetic material, and slow-wave structure is configured to the magnetic field that will be generated by the electromagnetic energy for propagating through slow-wave structure
It is magnetically coupled in ferrimagnet.In some embodiments, slow-wave structure be have setting a pair of of second transmission line section it
Between first transmission line section transmission line.
In one embodiment, first transmission line section and the pair of second transmission line section include tape conductor and
A pair of of ground plane conductor.Tape conductor includes the first band-like conductor section and a pair of second tape conductor section, first band
Shape conductor section is arranged between the pair of second tape conductor section.In some embodiments, the first band-like conductor section
The first distance is separated with a part for the pair of ground plane conductor being arranged above and below the first band-like conductor section
D1.The pair of second tape conductor section can with connecing above and below the pair of second tape conductor section is set
The spaced-apart second distance D of ground plane conductor2, D1And D2It is different distance.
In another aspect, this disclosure relates to frequency selective limiter.Frequency selective limiter includes with opposite the
The first layer dielectric material of one surface and second surface and the first layer with opposite first surface and second surface are magnetic
Material.In one embodiment, the second surface of first layer dielectric material is arranged on the first surface of the first magnetic material, is situated between
Electric material has the relative permitivity lower than magnetic material.Tape conductor is arranged on first layer magnetic material.
In some embodiments, frequency selective limiter includes the second layer for having opposite first surface and second surface
Dielectric material and second layer magnetic material with opposite first surface and second surface.The first of second layer dielectric material
Surface is arranged on the second surface of the second magnetic material, and tape conductor is arranged in first layer magnetic material and second layer magnetism material
Between material.
In one embodiment, first layer dielectric material and second layer dielectric material and first layer dielectric material and second
The combination of layer magnetic material includes having input impedance Z0Slow-wave structure.Impedance can when electromagnetic energy propagates through slow-wave structure
With periodically from more than Z0Impedance become smaller than Z0Impedance.
In some embodiments, frequency selective limiter includes the first ground plane and the second ground plane.First ground connection
Plane is arranged on the first surface of first layer dielectric material, and the second table in second layer dielectric material is arranged in the second ground plane
On face.Frequency selective limiter may include：First group of conductive pad being arranged between first layer dielectric material and magnetic material
And second group of conductive pad being arranged between second layer dielectric material and second layer magnetic material.
In one embodiment, first group of through-hole is arranged in first layer dielectric material, and second group of through-hole is arranged second
In layer dielectric material.First ground plane is attached to first group of conductive pad to first group of through-hole and second group of through-hole connects second
Ground level is attached to second group of conductive pad, to form Low ESR strip line section and high impedance strip line section in slow-wave structure
Alternating section.The coupling of the alternating section of Low ESR strip line section and high impedance strip line section propagates through slow-wave structure
Magnetic energy simultaneously makes it into the first magnetosphere and the second magnetosphere.The magnetic energy can have the work(higher than predetermined power threshold
Rate level.
In some embodiments, frequency selective limiter is with input impedance Z0Transmission line.Transmission line includes setting
First transmission line section between a pair of of second transmission line section.First transmission line section, which can have, is higher than Z0Impedance ZH,
The pair of second transmission line section, which has, is less than Z0Impedance ZL.In one embodiment, first transmission line section and described one
The length for respectively having the nominal operation wavelength of the electromagnetic energy than propagating through slow-wave structure short to second transmission line section.
In another aspect, this disclosure relates to frequency selective limiter.Frequency selective limiter include magnetic material and
The dielectric layer being arranged on magnetic material, the magnetic field magnetic coupling that magnetic material will be generated by the electromagnetic energy for propagating through slow-wave structure
Into magnetic material.In one embodiment, dielectric layer has the relative permitivity lower than magnetic material.Slow-wave structure can have
There is input impedance Z0, when electromagnetic energy propagates through slow-wave structure, impedance can be periodically from more than Z0Impedance become smaller than
Z0Impedance.
In some embodiments, ground plane is arranged on the first surface of dielectric layer.One group of conductive pad can be arranged
Between dielectric layer and magnetic material.In addition, one group of through-hole can be arranged in dielectric layer.In one embodiment, described one group
Ground plane is attached to one group of conductive pad by through-hole, in slow-wave structure formed Low ESR strip line and high impedance it is band-like
The alternating section of line.In some embodiments, the alternating section of Low ESR strip line and high impedance strip line coupling propagates through
The electromagnetic energy of slow-wave structure simultaneously makes it into magnetic material.
In another aspect, this disclosure relates to the frequency selection limit including first layer dielectric material and second layer dielectric material
Device processed, first layer dielectric material and second layer dielectric material respectively have opposite first surface and second surface.Frequency selects
Limiter further includes first layer magnetic material and second layer magnetic material, and first layer magnetic material and second layer magnetic material are respectively
With opposite first surface and second surface.The second surface of first layer dielectric material is arranged the first of the first magnetic material
On surface, the first surface of second layer dielectric material is arranged on the second surface of the second magnetic material.In one embodiment,
Dielectric material has the relative permitivity lower than magnetic material.Tape conductor can be arranged in first layer magnetic material and the second layer
Between magnetic material.
In one embodiment, slow-wave structure is with input impedance Z0Transmission line, the transmission line include first transmission
Line section and a pair of of second transmission line section, first transmission line section, which has, is higher than Z0Impedance ZH, the pair of second transmission line
Section, which has, is less than Z0Impedance.In some embodiments, impedance can be periodical when electromagnetic energy propagates through slow-wave structure
Ground is from more than Z0Impedance become smaller than Z0Impedance.
In one embodiment, frequency selective limiter includes the first ground plane and the second ground plane.First ground connection
Plane is arranged on the first surface of first layer dielectric material, and the second table in second layer dielectric material is arranged in the second ground plane
On face.First group of conductive pad is arranged between first layer dielectric material and magnetic material, and second group of conductive pad is arranged in the second layer
Between dielectric material and the second magnetic material.
In one embodiment, first group of through-hole is arranged in first layer dielectric material, and second group of through-hole is arranged second
In layer dielectric material.First ground plane is attached to first group of conductive pad to first group of through-hole and second group of through-hole connects second
Ground level is attached to second group of conductive pad, to form the alternating portion of Low ESR strip line and high impedance strip line in slow-wave structure
Section.In one embodiment, the first transmission line section and the pair of second transmission line section respectively have more logical than propagating
Cross the short length of the nominal operation wavelength of the electromagnetic energy of slow-wave structure.
It has been recognised by the inventors that, although slow-wave structure (SWS) has been used for generating bigger for same physical length
Time delay, but they generate local high-intensity magnetic field using the characteristic of SWS.The structure generates the strong magnetic coupling in part, from
And reduce effective power threshold value via electrical design rather than change material property.In addition, using having extremely low characteristic impedance
Periodical section, the present inventor enhances the magnetic interaction of microwave signal and magnetic substrates (for example, YIG substrates), to drop
Effective power threshold value when low non-linear generation, and to realize the relatively low threshold for starting required non-linear behavior
Value.This makes it possible to the threshold value similar with monocrystalline YIG substrates and drain performance using inexpensive polycrystalline YIG materials, or
Lower threshold power can be being realized when monocrystal material is used together, to improve and sense the compatibility for receiving framework.Separately
Outside, the ability for designing the local strength in magnetic field makes it possible to design the operation limit of FSL in the case where not changing material itself
The FSL transmission characteristics in region processed.In addition, when the high impedance section and Low ESR section that use equal length and its natural characteristic
The product of impedance (native characteristic impedance) is equal to Z0 2When, composite transmission line keeps the characteristic of 50 Ω
Impedance.
In one embodiment, tape conductor includes that first be arranged between a pair of second tape conductor section band-like is led
Body section, the first band-like conductor section and a pair of of ground plane conductor for being arranged above and below the first band-like conductor section
A part separates the first distance D1, the pair of second tape conductor section is with setting in the pair of second tape conductor section
Above and below ground plane conductor spaced-apart second distance D2, D1And D2It is different distance.In this embodiment,
Tape conductor width has been set to minimize the constant of small signal insertion loss, and impedance changes by using conductive through hole
The vertical distance of ground plane is set.Although limiter is matched with 50.0 Ω, numerous Low ESR sections of slow-wave structure will
Considerably higher magnetic energy is coupled in magnetic material, locally to reduce power threshold.It reduce total effective power threshold value,
Without the return loss or instant bandwidth of degradation device.Tape conductor width is set to minimize small signal insertion loss
Constant, and impedance changes the vertical distance of ground plane to set by using conductive through hole.Although entirety FSL components and 50
Ω is matched, but considerably higher magnetic energy is coupled in material by numerous Low ESR sections of slow-wave structure, locally to reduce work(
Rate threshold value.It reduce total effective power threshold values, without the return loss or instant bandwidth of degradation device.
It should be noted that for slow-wave structure, using the repetition pair of high impedance section and Low ESR section, wherein each section
Much smaller than wavelength (λ, wherein λ are the nominal operation wavelength of slow-wave structure) (in fact,<(λ)/10, but the smaller the better).By institute
Section is stated electrically small, therefore the effective impedance of entire transmission line structure is the square root of the product of two impedances.This is the phase
Prestige product is Z0 2The reason of.For example, structure can be with 100 ohm and 25 ohm of impedance section；However, 10 ohm and 250
Ohm or even 5 ohm and 500 ohm can be preferred.Here, it is difficult to realizing>100 ohm of line；However, logical
This last embodiment is crossed, vertical through holes are made it easier to realize for Low ESR section>100 ohm of line, this be by
Realize high impedance without keeping center conductor minimum by being moved far from tape conductor section in ground plane.
Furthermore, it is possible to via the design change of transmission line structure and the dielectric material property of unoptimizable adjusts FSL
It can parameter.Herein, power threshold is the function of both material property and transmission line structure now.Due to the spy of slow-wave structure
Sign is the stronger magnetic coupling in magnetic material, the RF power smallers needed for realization same magnetic field intensity, therefore power
Effective threshold value is lower.Another benefit is can to design specific threshold power.Slow-wave structure is designed to provide specific magnetic field
Intensity (thus threshold power level P is providedTH) more much easier than adjusting the material property of magnetic material.
In addition, although helical slow-wave structure has been used as the slow-wave structure in TWTA (travelling-wave tube amplifier) with the RF letters that slow down
Number so that the electronics that speed is advanced through spiral center with the length along pipe is identical, so that the electronics that electron gun generates is whole
It terminates on the other side of pipe, and since electronics and RF signals are advanced with identical speed, they interact and RF
The intensity of signal increases when it advances along coil；It has been recognised by the inventors that, RF can be enhanced using helical structure
The magnetic coupling at the center or the magnetic material at core of signal and spiral, instead of making RF signals interact with electron beam, but
RF signals are made to interact with magnetic material, this interaction will lead to spin wave, and spin wave is with the half frequency of RF signals
The heat in the crystal structure of magnetic material is set to dissipate, so that signal is decayed.These spin waves make energy dissipate as heat.
It will be appreciated that the element of various embodiments be described herein can be combined, it is not specifically described above with formation
Other embodiments.The various elements described in the context of a single embodiment can also be provided separately or carry in appropriate combination
For.Other embodiments not specifically disclosed herein are also in the range of following claims.
The details of one or more other embodiments of the present disclosure is elaborated in the accompanying drawings and the description below.According to specification and attached
Figure and claim, the other features, objects and advantages of the disclosure will be apparent.
Description of the drawings
Figure 1A, Figure 1B and Fig. 1 C show the frequency response of frequency selective limiter (FSL) according to prior art；Figure 1A
Show the frequency spectrum of the input signal of FSL；Figure 1B shows the transmission loss by FSL, it is noted that power in input signal
Level is higher than predetermined power threshold level PTHThere is significantly decaying in the frequency component of (Figure 1A), power level is less than in input signal
Predetermined power threshold level PTHFrequency component by FSL without decaying (in addition to a small amount of loss of signal (resistance loss, impedance
Mismatch etc.))；And Fig. 1 C show output power spectrums of the FSL to multiple weak signals and strong signal；
Fig. 2 shows FSL according to prior art；
Fig. 3 is the exploded isometric view according to the FSL of the disclosure；
Fig. 4 and Fig. 4 A are the schematic isometric view and cross-sectional view of FSL according to another embodiment of the present disclosure respectively；
Fig. 5 A to Fig. 5 E are the different views according to the FSL of the another embodiment of the disclosure；Fig. 5 A are that have to be formed in magnetic
Property substrate on helical slow-wave structure FSL cross-sectional view, substrate has the spiral coil conductor around its setting, and substrate tied
Dielectric sheet is closed, dielectric sheet has the metal trace that earth conductor is provided to FSL structures；Fig. 5 B are the flat of the top of magnetic substrates
Face figure；Fig. 5 C are the plan views of the bottom of magnetic substrates；Fig. 5 D are the plan views of the bottom of lower dielectric plate；And Fig. 5 E are tools
There is the schematic isometric view of the FSL of the helical slow-wave structure of Fig. 5 A to Fig. 5 D；And wherein, the cross-sectional view of Fig. 5 A be along
Line 5A-5A interception in Fig. 5 D, the vertical view of Fig. 5 B be it is specified by the line 5B-5B in Fig. 5 A, the upward view of Fig. 5 C be by
What the line 5C-5C in Fig. 5 A was specified, and the upward view of Fig. 5 D is specified by the line 5D-5D in Fig. 5 A；
Fig. 6 is the cross section of the FSL with micro-strip (microstrip) transmission line according to another embodiment of the present disclosure
Figure；
Fig. 7 is the end-view of the FSL with stripline transmission line according to another embodiment of the present disclosure；
Fig. 7 A are the cross-sectional views along the FSL of the line 7A-7A interceptions in Fig. 7.
Identical reference numeral in each attached drawing indicates identical element.
Specific implementation mode
Referring now to Figure 3, showing frequency selective limiter (FSL) 10.Limiter 10 be include strip line microwave transmission
The slow-wave structure of line, strip line microwave transmission line have a series of differences from the output for being input to limiter 10 of limiter 10
Impedance ZIt is highAnd ZIt is low.Specifically, as shown, limiter 10 includes a pair of magnetic component, plate 12 and 14 is (herein for example
It is ferromagnetic plate, such as YIG plates 12 and 14), plate 12 and 14, which has, is clipped in plate and connecing on the outer surface of magnetic sheet 12 and 14
Tape conductor 16 between ground plane conductor 18 and 20.As shown, the width of tape conductor 16 in the narrow section 16N of width and
Change between the section 16W of wider width.Herein, slow-wave structure 10 has 50 ohm of input impedance Z0；Narrow section
16N provides such as 250 ohm of impedance herein, and wider section 16W provides such as 10 ohm of impedance herein.Often
The length of a section is less than the nominal operation wavelength into the electromagnetic energy of FSL.The impedance of each section is led by the band-like of the section
The width of body determines.The size and spacing of wider section 16W and narrow section 16N provides 50 ohm of input to slow-wave structure
Impedance Z0.Therefore, herein, when electromagnetic energy propagates through slow-wave structure 10, narrow section 16N and wider section 16W
Impedance periodically from more than Z0Impedance become smaller than Z0Impedance.It should be noted that a pair of traditional lift magnet 11 (
It is, for example, permanent magnet herein) it is mounted to the side of the structure.Permanent bias magnet 11 can be mounted to the top of the structure
Portion and bottom.Magnetic field intensity in the structure determines the bandwidth of operation of limiter.In conducting wire (not shown) around total
In the case of winding on the direction perpendicular to strip line to provide winding, electromagnet can be used.DC electric current flow through around
Group, to provide bias magnetic field.The biasing is selected to determine the bandwidth of operation of limiter.
Slow-wave structure 10 by slow-wave structure 10 there is higher power level (to be higher than predetermined FSL power thresholds PTHPower
Level) the magnetic energy of input nonlinearities signal be coupled in the magnetic material of magnetic sheet 12 and 14.In other words, slow-wave structure 10 is used for
The magnetic field that the electromagnetic energy for propagating through slow-wave structure generates is magnetically coupled in magnetic sheet 12 and 14.
Referring now to Fig. 4 and Fig. 4 A, slow-wave structure FSL 10' are shown.Limiter 10' be include strip line microwave transmission line
Slow-wave structure, the strip line microwave transmission line have from the output for being input to limiter 10' of limiter 10' it is a series of not
Same impedance ZIt is highAnd ZIt is low.Specifically, as shown, limiter 10' include two couples of magnetic sheet 12a and 12b and 14a and 14b,
It has the tape conductor 16 being clipped between the ground plane conductor 18 and 20 on the outer surface of plate and ferromagnetic plate 12a and 14a.
Specifically, as shown, magnetic material (such as ferromagnetic plate 12a herein) is on its outer surface
Ground plane conductor 18 and a series of conductive pads 21 laterally spaced by region 27a on its interior surface.As schemed
Show, conductive pad 12 is connected to ground plane conductor 18 by conductive through hole 22, and the conductive through hole 22 passes through conductive pad 21 and connects
Plate 12a between ground plane conductor 18.
As shown, ferromagnetic plate 12b is arranged between the upper surface of tape conductor 16 and conductive pad 21.
Similarly, magnetic sheet 14a is also for example herein ferromagnetic plate, as shown it has being located at its outer surface
On ground plane conductor 20 and a series of conductive pads 23 laterally spaced by region 27a on its interior surface.Such as figure
Shown, conductive pad 23 is connected to ground plane conductor 20 by conductive through hole 25, the conductive through hole 25 pass through conductive pad 23 with
Plate 14a between ground plane conductor 20.
As shown, ferromagnetic plate 14b is arranged between the bottom surface and conductive pad 23 of tape conductor 16.
It should be noted that conductive pad 21,23 respective (and the ground plane conductor 18 and 20 being therefore actually electrically connected) and band
The distance between shape conductor 16 D1Less than between the ground plane conductor 18 and 20 in tape conductor 16 and region 27a and 27b
Distance D2.Therefore, the impedance Z in region 27a and 27bIt is highMore than the impedance Z in the region with conductive pad 21 and 23It is low.Therefore,
Herein, slow-wave structure 10' has 50 ohm of input impedance Z0；It is, for example, 250 that region 27a and 27b are provided herein
The impedance of ohm, and pass through the impedance herein for providing for example, 10 ohm of the region of conductive pad 21 and 23.Size and away from
From D1And D2It is supplied to slow-wave structure to provide 50 ohm of input impedance Z0.Therefore, when electromagnetic energy propagates through slow-wave structure 10'
When, the impedance of slow-wave structure 10' is periodically from more than Z0Impedance become smaller than Z0Impedance.The impedance of each section by away from
From D1And D2It determines.
In this embodiment, the width of tape conductor 16 is set to make small signal (small-signal) insertion loss most
The constant of smallization, and impedance changes the vertical distance of ground plane 18 and 20 to set by using through-hole 22.Although entire FSL
Component is matched with 50 Ω, but considerably higher magnetic energy is coupled in ferromagnetic plate by numerous Low ESR sections of slow-wave structure, from
And locally reduce power threshold PTH.It reduce total effective power threshold values, and will not also make the return loss of device
Or instant bandwidth deterioration.Referring now to Fig. 5 A to Fig. 5 E, another embodiment of FSL is shown.Herein, as shown,
FSL is helical slow-wave structure 10', is had made of magnetic substrates 30 (being herein ferromagnetism (such as YIG) substrate)
Magnetic bodies 30.Substrate 30 provides the magnetic core for spiral conductor or coil 32.Due to the reinforcement of the adjacent turn in coil 32,
Spiral conductor 32 is used to generate high-intensity magnetic field in ferrimagnet center or core 30.Coil 32 has been implemented conductive through hole 34,
The top side of coil 32 to be connected to the bottom side of coil 32.Since the magnetic field on the outside of coil is relatively small, in loop construction 32
It may be unfavorable that outside, which has additional magnetic substrates (for example, YIG substrates) (not shown),.In one application, coil
Ground connection is with reference to the metal trace 36 including being limited on the bottom side of support dielectric sheet 38.Dielectric sheet 38 is incorporated into magnetic bodies
30 bottom supports dielectric substance to be attached to the ferromagnetism core (or substrate) for accommodating coil 32 whereby.In this application, it is situated between
The dielectric material of battery plate 38 is non-magnetic material, the Rogers CT laminated materials of such as FR-4 or Rogers Corporation.
In one application, when static magnetic field is parallel with RF Induced magnetic fields, minimum critical field is realized.
It is herein permanent magnet it should be noted that including a pair of of lift magnet 11.Magnetic field intensity in the structure determines limit
The bandwidth of operation of device processed.Loop construction is oriented perpendicularly to the axial direction in the magnetic field generated by magnet 11.For biasing
Situation, it is noted that permanent magnet 11 is arranged in the either end of coil, rather than is arranged along side or top and bottom.
Referring now to Figure 6, frequency selective limiter 40 includes the magnetic material 42 being arranged on dielectric material 44, the dielectric
Material 44 is arranged on ground plane 50 again.Magnetic material 42 has opposite first surface 42a and second surface 42b, dielectric
Material 44 also has opposite first surface 44a and second surface 44b.In the illustrative embodiment of Fig. 6, magnetic material 42
Second surface 42b is arranged on the first surface 44a of dielectric material 44.The first table in magnetic material 42 is arranged in tape conductor 46
On the 42a of face so that ground plane 50, dielectric material 44 and magnetic material 42 form microstrip transmission line structure.
In one embodiment, dielectric material 44 has the relative permitivity or relative dielectric constant lower than magnetic material 42
εr.In some embodiments, magnetic material 42 may be provided as ferrimagnet, such as yttrium iron garnet (YIG), dielectric material
Material 44 may be provided as non-magnetic material, CT layers of the Rogers of such as FR-4 laminated materials or Rogers Corporation
Press material (for example, 4003 layered products of RO).It is of course also possible to use the other materials with similar mechanically and electrically characteristic.Example
As but be not limited to, magnetic material 42 may be provided as monocrystalline YIG, polycrystalline YIG, hexad ferrite YIG or various doping YIG
Material.In addition it and is not limited to, dielectric material 44 may include having low relative permitivity (that is, relative dielectric constant is less than 4)
Any material.In some embodiments, dielectric material 44 may be provided as aluminium or low-temperature co-fired ceramics (LTCC).
Conductive through hole 54a-54x can be disposed through dielectric material 42 and at least be electrically coupled to ground plane 50 and set
Set first group of conductive pad 52 between the second surface 42a of magnetic material 42 and the first surface 44a of dielectric material 44.It is conductive
Through-hole 54a-54x can be spaced a predetermined distance with neighbouring or adjacent conductive through hole 54.In one embodiment, each conductive logical
Hole 54a-54x is aligned at least one conductive pad 52.In one embodiment, conductive through hole 54a-54x can be thusly-formed, and be made
Their planes residing for the ground plane 50 and tape conductor 46.
In one embodiment, region 56 is formed between each conductive pad 52.Region 56 may include having manufactured
Period flows back into the part of the dielectric material 44 in the gap between being formed in each conductive pad 52 (that is, region 56).At some
In embodiment, region 56 includes the jointing material that dielectric material 44 is attached to magnetic material 42.For example, jointing material can be by
It is provided as and the relatively low melting temperature pattern of the identical material provided with dielectric material 44.In other embodiments, region 56 can
With the different dielectric media of the material for being provided as from being provided with dielectric material 44.
In some embodiments, each of conductive pad 52 may include the bonding material of setting at least one surface
Material, magnetic material 42 is adhered to by each conductive pad 52.Jointing material can be formed as very thin (example on conductive pad 52
Such as, thickness is in the range of about 0.5 mil to about 2 mil) layer.It is to be understood that the material of specific group has once been selected, this
How field is ordinarily skilled artisan will understand that by dielectric layer 44 to adhere to magnetic material layer.
Conductive through hole 54a-54x may be operative to the ground plane of the Low ESR part in frequency selective limiter 40.Example
Such as, in the illustrative embodiment of Fig. 6, conductive through hole 54a-54x forms Low ESR micro-strip in frequency selective limiter 40 and passes
The alternating section of defeated line and high impedance microstrip transmission line.In one embodiment, the low-resistance parts in frequency selective limiter 40
The quantity of section is equal to the quantity of high impedance section.
In one embodiment, the characteristic impedance of particular system determines the impedance between Low ESR section and high impedance section
Threshold value.For example, the section that impedance is less than the characteristic impedance of system can be Low ESR section, impedance is more than the characteristic impedance of system
Section can be high impedance section.In one embodiment, the system for being 50 ohm for characteristic impedance, Low ESR section are
Refer to the section that impedance is less than 50 ohm.In the described embodiment, high impedance section refers to the section that impedance is more than 50 ohm.When
So, other systems can have more than 50 ohm or the characteristic impedance less than 50 ohm is (for example, 40 ohm or 60 ohm of characteristic
Impedance may be desired).In one exemplary embodiment, Low ESR section has less than 30 ohm of impedance, and high resistant
Anti- section has the impedance more than 75 ohm.
Therefore, in one embodiment, frequency selective limiter 40 is slow-wave structure, simultaneously with micro-strip microwave transmission line
And with a series of different impedance Zs of the output for being input to frequency selective limiter 40 from frequency selective limiter 40It is highWith
ZIt is low。
In some embodiments, a pair of neighbouring or adjacent section is (that is, a Low ESR section and a high impedance portion
Section) form unit (unit cell).Interval between each unit can be identical or substantially similar.For example, each unit can be with
With equal length and width.The length and width of unit can be based on frequency selective limiter 40 special operating frequency or
Operational frequency range selects.For example, in one embodiment, each unit can be with the length of about 40 mils, this offer
Frequency is up to about the effective operation of 5GHz.In other embodiments, each unit can be with the length of about 20 mils, this is carried
Frequency has been supplied to be up to about effective operation of 10GHz.
In some embodiments, the length (that is, being parallel to the size of the length of tape conductor 46) of each conductive pad 52 can
With the length equal to its corresponding unit, or it is about the half of the length of its corresponding unit.For example, being about 20 mils in length
In the embodiment of unit, the length of corresponding conductive pad 54 is about 10 mils.
Each conductive pad 52 may be provided as having sufficiently wide to support the width of micro-strip (or strip line) line mode
It spends (that is, perpendicular to size of the length of tape conductor 46).For example, in some embodiments, each conductive pad 52 can be carried
For at least three times that width is the distance between corresponding conductive pad 52 and tape conductor 46.
In some embodiments, width in each of conductive through hole 54a-54x (for example, along with first group on it
It is parallel that the plane between the second surface 42a of magnetic material 42 and the first surface 44a of dielectric material 44 is arranged in conductive pad 52
Plane size) may be provided as minimum dimension (that is, length or width) less than corresponding conductive pad 52.
In one embodiment, each of conductive pad 52 has identical or substantially similar size, and conductive through hole
Each of 54a-54x has identical or substantially similar size, therefore frequency selective limiter 40 may be provided as substantially
Symmetrical structure.
In one embodiment, the impedance in frequency selective limiter 40 can be by changing ground plane and tape conductor
Vertical distance between 46 sets or controls.For example, conductive pad 52 (that is, serving as the ground plane that conductive pad 52 is connected to)
The distance between tape conductor 46 D1It is led with band-like less than the ground plane 50 being not provided in the region 56 of conductive through hole 54
The distance between body 46 D2.Therefore, the impedance Z in region 56It is highMore than the impedance Z in the region with conductive pad 52It is low。
The magnetic energy for propagating through slow-wave structure is coupled to magnetic by the alternating section of Low ESR microstrip line and high impedance microstrip line
In property material 42.In one embodiment, power level is greater than or equal to the predetermined power level threshold of frequency selective limiter 40
The magnetic energy of value is coupled in magnetic material 42.The combination of magnetic material 42 and dielectric material 44 in frequency selective limiter 40
Magnetic energy is increased to the magnetic coupling in magnetic material 42.For example, multiple Low ESR microstrip transmission lines are by considerably higher magnetic energy coupling
It closes into magnetic material 42, to reduce total effective power threshold value.
Referring now to Fig. 7 and Fig. 7 A, in the identical elements of Fig. 7 and Fig. 7 A reference numeral having the same, frequency selection limit
Device 60 processed includes a pair of magnetic material 62 being arranged around tape conductor 66 and 63 and a pair of of dielectric material 64 and 65, intermediary
On first in electric material 64 and 65 first be arranged in magnetic material 62 and 63, second in dielectric material 64 and 65
On a second be arranged in magnetic material 62 and 63.In one embodiment, frequency selective limiter 60 is provided as having
There is the multilayer frequency selective limiter structure of strip transmission cable architecture.For example, tape conductor 66 is arranged in the first magnetic material
Between 62 surface 62b and the surface 63a of the second magnetic material 63.The second surface 64b setting of first dielectric material 64 is the
On the first surface 62a of one magnetic material 62.The first surface 64a in the second dielectric material 64 is arranged in first ground plane 70a
On.In addition, the second surface 63b of the second magnetic material 63 is arranged on the first surface 65a of the second dielectric material 65.Dielectric material
The second surface 65b of material 65 is arranged on the second ground plane 70b.
In one embodiment, frequency selective limiter 60 includes two groups of conductive pads 72 and 73.Set every group is conductive
Pad can be arranged between magnetic material 62 and 63 and dielectric material 64 and 65.For example, as shown in fig. 7, first group of conductive pad
72 are arranged between the second surface 64b of dielectric material 64 and the first surface 62a of magnetic material 62.In addition, second group conductive
Pad 73 is arranged between the second surface 63b of magnetic material 63 and the first surface 65a of dielectric material 65.
As that can be clear that in fig. 7, two groups of conductive through holes 74a-74d and 75a-75d are disposed across
Corresponding dielectric materials layer setting in dielectric materials layer 64 and 65.It is corresponding conductive logical in conductive through hole 74a-74d and 75a-75d
Corresponding conductive pad in conductive pad 72a-72d and 73a-73d is electrically coupled to the corresponding ground connection in ground plane 70a and 70b by hole
Plane.In order to change to be presented to frequency choosing is propagated through along the stripline transmission line formed by tape conductor 66 and ground plane
The impedance for selecting the RF signals of limiter 60 can control the vertical distance between ground plane 70a and 70b and tape conductor 66.
In the illustrative embodiment of Fig. 7 A, it is arranged through the conduction of the corresponding dielectric material in dielectric material 64 and 65
Corresponding ground plane in ground plane 70a and 70b is electrically coupled in conductive pad 72a-72d and 73a-73d by through-hole 74a-74d
Corresponding conductive pad, to form Low ESR strip line section 76 and high impedance strip line section in the frequency selective limiter 60
78 alternating section.Therefore, in one embodiment, frequency selective limiter 60 is the slow wave knot for having micro-strip microwave transmission line
Structure, the micro-strip microwave transmission line have one from the output for being input to frequency selective limiter 60 of frequency selective limiter 60
The different impedance Z of seriesIt is high78 and ZIt is low76。
The alternating section of Low ESR strip line 76 and high impedance strip line 78 couples the magnetic energy for propagating through slow-wave structure
Into pairs of magnetic material 62 and 63.
In one embodiment, using alternating (that is, periodically) section with extremely low characteristic impedance (for example, impedance is small
In the Low ESR strip line 76 of system characteristic impedance), the magnetic interaction of signal and magnetic material 62 and 63 enhances.Magnetic material
62 and 63 and the combination of dielectric material 64 and 65 can be by stronger magnetic coupling to the magnetic in Low ESR strip line section 76
In property material 62 and 63.Therefore, the effective power threshold value when frequency selective limiter 60 occurs non-linear is lowered.At one
In embodiment, cause power level needed for non-linear behavior by reducing, frequency selective limiter 60 is even lower defeated
Enter power level and protection is provided.For example, in the embodiment that power threshold is about 10dBm, the interference signal of about 5dBm still may
Cause problem.However, with about 0dBm reduction power threshold level frequency selective limiter 60 will provide protection in order to avoid
In identical 5dBm interference signals.
In one embodiment, it is slotting to be set to reduction (and ideally minimizing) small signal for the width of tape conductor 66
Enter the constant of loss, impedance is by changing the vertical distance of ground plane 70a and 70b and therefore changing conductive through hole 74a-74d
It is set with the length of 75a-75d.For example, in Low ESR strip line 76, the first ground plane 70a and the second ground plane
70b is closer to tape conductor 66 (to provide higher capacitance, thus providing lower impedance)；And in high impedance strip line 78
In, the first ground plane 70a and the second ground plane 70b are further from center tape conductor 66 and normal with lower effective dielectric
Number (function of the combination of magnetic material 62 and 63 and dielectric material 64 and 65), to provide higher impedance.
The input port of frequency selective limiter 60 and the impedance at output port can be with desired characteristic impedance (examples
Such as, include the characteristic impedance of the system of FSL, such as characteristic impedance of 50 Ω) matching.However, numerous Low ESRs of slow-wave structure
Considerably higher magnetic energy is coupled in magnetic material 62 and 63 by section simultaneously, to locally reduce power threshold (PTH).Example
Such as, when a section of frequency selective limiter 60 has Low ESR, the magnetic field of radio frequency (RF) signal is higher than frequency selection limit
The section with high impedance of device 60 processed.Therefore, FSL structures described herein can reduce total effective power threshold value, without
The return loss or instant bandwidth of meeting degradation device.
In one exemplary embodiment, frequency selective limiter 60 is formed to have two layers of 100 microns thick of polycrystalline YIG
As magnetic material 62 and 63 and two layers of 60 mil thicks Rogers 4003 be used as dielectric material 64 and 65.First ground connection is flat
Face 70a is arranged on the first surface 64a of the first dielectric material 64.The second surface 64b setting of first dielectric material 64 is the
On the first surface 62a of one magnetic material 62.First in second surface 62a and the second magnetic material 63 is arranged in tape conductor 66
Between the 63a of surface.The second surface 63b of second magnetic material 63 is arranged on the first surface 65a of the second dielectric material 65.The
Two dielectric materials 65 are arranged on the second ground plane 70b.
In such an embodiment, it is about 175 microns from width when using YIG ground planes (that is, conductive pad 72 and 73)
Tape conductor (that is, ZIt is low76) 20 (20) ohm sections of transmission line are provided, and are located at dielectric material 64 and 65 (examples when using
Such as, Rogers materials) exterior portion on ground plane 70a and 70b when, 50 microns of wide stripline conductors are (that is, ZIt is high78)
Realize 120 ohm of impedance.
In one embodiment, strip line section length 76 and 78 is formed electrically small, all such as less than wavelength (λ,
Wherein λ is the nominal operation wavelength of frequency selective limiter 60).For example, in one embodiment, 76 He of strip line section length
78 are formed to be less than the 1/10 of wavelength (under maximum operating frequency<(1/10) (λ)), this cause 49 ohm of characteristic impedance with
And 1.43 slow wave coefficient.Therefore, if using 50 ohm of line, the increased magnetic field intensity generated by Low ESR section 76
Earlier the work(of frequency selective limiter 60 is reduced by activating spin wave in dielectric material 64 and 65 (that is, YIG materials)
Rate threshold value.
In some embodiments, conductive through hole 74 and 75 and ground plane 70a and 70b can be by 64 He of dielectric material
Interior manufacture is formed on 65 or on dielectric material 64 and 65, therefore need not be carried out micromechanics to dielectric material 64 and 65 and be added
Work or etching.
Many embodiments of the disclosure have been described.It will nevertheless be understood that in the spirit for not departing from the disclosure
In the case of range, various modifications can be carried out.For example, can be by using ground plane height and center conductor line width
To change high impedance line and low-impedance line.In another Helical slow wave embodiment, it can be held by placing the coil in metal
In device shielding and make that ground plane reference is presented with air or dielectric gap between coil and metallic barrier.
Therefore, other embodiments are in the range of following claims.
Claims (26)
1. a kind of frequency selective limiter, including：
First layer dielectric material with opposite first surface and second surface；
First layer magnetic material with opposite first surface and second surface, described the second of the first layer dielectric material
Surface is arranged on the first surface of the first layer magnetic material, and the dielectric material has lower than the magnetic material
Relative permitivity；And
Tape conductor on the first layer magnetic material is set.
2. frequency selective limiter according to claim 1, which is characterized in that the frequency selective limiter further includes：
Second layer dielectric material with opposite first surface and second surface；
Second layer magnetic material with opposite first surface and second surface, described the first of the second layer dielectric material
Surface is arranged on the second surface of the second layer magnetic material；And
The tape conductor is arranged between the first layer magnetic material and the second layer magnetic material.
3. frequency selective limiter according to claim 2, which is characterized in that the first layer dielectric material and described
The combination of two layers of dielectric material and the first layer magnetic material and the second layer magnetic material includes having input impedance Z0
Slow-wave structure, when electromagnetic energy propagates through the slow-wave structure, impedance is periodically from more than Z0Impedance become smaller than Z0
Impedance.
4. frequency selective limiter according to claim 2, which is characterized in that the frequency selective limiter further includes
First table in the first layer dielectric material is arranged in one ground plane and the second ground plane, first ground plane
On face, second ground plane is arranged on the second surface of the second layer dielectric material.
5. frequency selective limiter according to claim 4, which is characterized in that the frequency selective limiter further includes setting
First group of conductive pad between the first layer dielectric material and the first layer magnetic material and setting are set described the
Second group of conductive pad between two layers of dielectric material and the second layer magnetic material.
6. frequency selective limiter according to claim 5, which is characterized in that the frequency selective limiter further includes setting
Second group for setting first group of through-hole in the first layer dielectric material and being arranged in the second layer dielectric material is logical
Hole.
7. frequency selective limiter according to claim 6, which is characterized in that first group of through-hole connects described first
Ground level is attached to first group of conductive pad and second ground plane is attached to described by second group of through-hole
Two groups of conductive pads, to form the alternating portion of Low ESR strip line section and high impedance strip line section in the slow-wave structure
Section.
8. frequency selective limiter according to claim 7, which is characterized in that the Low ESR strip line section and high resistant
The alternating section coupling of anti-strip line section propagates through the magnetic energy of the slow-wave structure and makes it into the first layer magnetic
Property material and the second layer magnetic material in, the magnetic energy have higher than predetermined power threshold power level.
9. frequency selective limiter according to claim 2, which is characterized in that the frequency selective limiter be have it is defeated
Enter impedance Z0Transmission line, the transmission line includes the first transmission line section being arranged between a pair of of second transmission line section,
The first transmission line section, which has, is higher than Z0Impedance ZH, the pair of second transmission line section, which has, is less than Z0Impedance ZL。
10. frequency selective limiter according to claim 9, which is characterized in that the first transmission line section and described
A pair of of second transmission line section respectively has short long of the nominal operation wavelength of electromagnetic energy than propagating through the slow-wave structure
Degree.
11. a kind of frequency selective limiter, including：
Magnetic material, the magnetic material are used to the magnetic field generated by the electromagnetic energy for propagating through slow-wave structure being magnetically coupled to institute
It states in magnetic material；And
Dielectric layer on the magnetic material is set, and the dielectric layer has the relative permitivity lower than the magnetic material；
Wherein, the input impedance of the slow-wave structure is Z0, when the electromagnetic energy propagates through the slow-wave structure, impedance week
Phase property from more than Z0Impedance become smaller than Z0Impedance.
12. frequency selective limiter according to claim 11, which is characterized in that the frequency selective limiter further includes
Ground plane on the first surface of the dielectric layer is set.
13. frequency selective limiter according to claim 12, which is characterized in that the frequency selective limiter further includes
One group of conductive pad being arranged between the dielectric layer and the magnetic material.
14. frequency selective limiter according to claim 13, which is characterized in that the frequency selective limiter further includes
The ground plane is attached to one group of conductive pad by one group of through-hole being arranged in the dielectric layer, one group of through-hole,
To form the alternating section of Low ESR micro-strip section and high impedance micro-strip section in the slow-wave structure.
15. frequency selective limiter according to claim 14, which is characterized in that the Low ESR micro-strip section and high resistant
The alternating section coupling of anti-micro-strip section propagates through the electromagnetic energy of the slow-wave structure and makes it into the magnetism
In material, the electromagnetic energy has the power level higher than predetermined power threshold.
16. a kind of frequency selective limiter, including：
First layer dielectric material and second layer dielectric material, the first layer dielectric material and the second layer dielectric material are respectively
With opposite first surface and second surface；
First layer magnetic material and second layer magnetic material；The first layer magnetic material and the second layer magnetic material are respectively
With opposite first surface and second surface；The second surface of the first layer dielectric material is arranged in the first layer
On the first surface of magnetic material, the first surface setting of the second layer dielectric material is in second layer magnetism
On the second surface of material, the dielectric material has the relative permitivity lower than the magnetic material；And
The tape conductor being arranged between the first layer magnetic material and the second layer magnetic material；
Wherein, slow-wave structure is with input impedance Z0Transmission line, the transmission line includes first transmission line section and a pair
Second transmission line section, the first transmission line section, which has, is higher than Z0Impedance ZH, the pair of second transmission line section has
Less than Z0Impedance.
17. frequency selective limiter according to claim 16, which is characterized in that when electromagnetic energy propagates through the slow wave
When structure, impedance is periodically from more than Z0Impedance become smaller than Z0Impedance.
18. frequency selective limiter according to claim 16, which is characterized in that the frequency selective limiter further includes
First ground plane and the second ground plane, first ground plane are arranged described the first of the first layer dielectric material
On surface, second ground plane is arranged on the second surface of the second layer dielectric material.
19. frequency selective limiter according to claim 18, which is characterized in that the frequency selective limiter further includes
First group of conductive pad being arranged between the first layer dielectric material and the first layer magnetic material and setting are described
Second group of conductive pad between second layer dielectric material and the second layer magnetic material.
20. frequency selective limiter according to claim 19, which is characterized in that the frequency selective limiter further includes
First group of through-hole being arranged in the first layer dielectric material and second group be arranged in the second layer dielectric material
First ground plane is attached to first group of conductive pad and second group of through-hole by through-hole, first group of through-hole
Second ground plane is attached to second group of conductive pad, to form Low ESR strip line portion in the slow-wave structure
The alternating section of section and high impedance strip line section.
21. frequency selective limiter according to claim 16, which is characterized in that the first transmission line section and described
A pair of of second transmission line section respectively has short long of the nominal operation wavelength of electromagnetic energy than propagating through the slow-wave structure
Degree.
22. a kind of slow-wave structure, the slow-wave structure has the combination for the dielectric material being arranged around magnetic material, will be by passing
It broadcasts the magnetic field generated by the electromagnetic energy of the slow-wave structure to be magnetically coupled in the magnetic material, the slow-wave structure has defeated
Enter impedance Z0, when the electromagnetic energy propagates through the slow-wave structure, impedance is periodically from more than Z0Impedance become smaller than
Z0Impedance.
23. combination, including following item：
Magnetic material；
Around the dielectric material of magnetic material setting；And
Slow-wave structure, the slow-wave structure are configured to the magnetic field magnetic that will be generated by the electromagnetic energy for propagating through the slow-wave structure
It is coupled in the ferrimagnet, the slow-wave structure is with input impedance Z0Transmission line, the transmission line include set
The first transmission line section between a pair of of second transmission line section is set, the first transmission line section, which has, is higher than Z0Impedance
ZH, the pair of second transmission line section, which has, is less than Z0Impedance.
24. combination according to claim 23, which is characterized in that the first transmission line section and the pair of second passes
The length that defeated line section respectively has the nominal operation wavelength of the electromagnetic energy than propagating through the slow-wave structure short.
25. combination, including following item：
Magnetic material；
Around the dielectric material of magnetic material setting；And
Slow-wave structure, the slow-wave structure are configured to the magnetic field magnetic that will be generated by the electromagnetic energy for propagating through the slow-wave structure
It is coupled in the ferrimagnet；
Wherein, the slow-wave structure is the transmission with the first transmission line section being arranged between a pair of of second transmission line section
Line；
Wherein, the first transmission line section and the pair of second transmission line section include：Tape conductor and at least one
Ground plane conductor, the magnetic material are arranged between the tape conductor and at least one ground plane conductor；With
And
Wherein, the tape conductor includes the first band-like conductor section being arranged between a pair of second tape conductor section, institute
State a part for the first band-like conductor section and the ground plane conductor being arranged above the described first band-like conductor section
Separate the first distance D1, the pair of second tape conductor section and it is arranged above the pair of second tape conductor section
The spaced-apart second distance D of the ground plane conductor2, D1And D2It is different distance.
26. combination, including following item：
Magnetic material；
Around the dielectric material of magnetic material setting；And
Slow-wave structure, the slow-wave structure are configured to the magnetic field magnetic that will be generated by the electromagnetic energy for propagating through the slow-wave structure
It is coupled in the ferrimagnet；
Wherein, the slow-wave structure is the transmission with the first transmission line section being arranged between a pair of of second transmission line section
Line；
Wherein, the first transmission line section and the pair of second transmission line section include：
Tape conductor；And
A pair of of ground plane conductor；
Wherein, the tape conductor includes：
First band-like conductor section；And
A pair of second tape conductor section, the first band-like conductor section setting the pair of second tape conductor section it
Between, the first band-like conductor section and the pair of ground connection being arranged above and below the described first band-like conductor section are flat
A part for face conductor separates the first distance D1, the pair of second tape conductor section and setting are band-like the pair of second
The spaced-apart second distance D of the pair of ground plane conductor above and below conductor section2, D1And D2Be different away from
From.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/996,881 | 2016-01-15 | ||
| US14/996,881 US9711839B2 (en) | 2013-11-12 | 2016-01-15 | Frequency selective limiter |
| PCT/US2017/012937 WO2017123586A1 (en) | 2016-01-15 | 2017-01-11 | Frequency selective limiter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108475835A true CN108475835A (en) | 2018-08-31 |
| CN108475835B CN108475835B (en) | 2020-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780006651.3A Active CN108475835B (en) | 2016-01-15 | 2017-01-11 | Frequency selective limiter |
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| Country | Link |
|---|---|
| EP (1) | EP3403293B1 (en) |
| JP (1) | JP6625226B2 (en) |
| KR (1) | KR102132548B1 (en) |
| CN (1) | CN108475835B (en) |
| AU (1) | AU2017206716B2 (en) |
| WO (1) | WO2017123586A1 (en) |
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| CN111082194A (en) * | 2019-10-30 | 2020-04-28 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
| CN113270714A (en) * | 2020-01-29 | 2021-08-17 | 上海诺基亚贝尔股份有限公司 | Antenna assembly |
| CN114097137A (en) * | 2019-08-02 | 2022-02-25 | 雷声公司 | Vertically meandering frequency selective limiter |
| TWI817495B (en) * | 2021-08-11 | 2023-10-01 | 美商雷森公司 | Transversely tapered frequency selective limiter |
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| US10707547B2 (en) * | 2018-06-26 | 2020-07-07 | Raytheon Company | Biplanar tapered line frequency selective limiter |
| US11024932B1 (en) * | 2019-07-24 | 2021-06-01 | Rockwell Collins, Inc. | Tunable frequency selective limiter |
| CN116886062B (en) * | 2023-07-26 | 2024-01-23 | 北京星英联微波科技有限责任公司 | High-resistance surface waveguide limiter |
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- 2017-01-11 JP JP2018536256A patent/JP6625226B2/en active Active
- 2017-01-11 AU AU2017206716A patent/AU2017206716B2/en active Active
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114097137A (en) * | 2019-08-02 | 2022-02-25 | 雷声公司 | Vertically meandering frequency selective limiter |
| CN111082194A (en) * | 2019-10-30 | 2020-04-28 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
| CN111082194B (en) * | 2019-10-30 | 2021-07-02 | 西安电子科技大学 | Substrate integrated slot gap waveguide transmission line with slow wave effect |
| CN113270714A (en) * | 2020-01-29 | 2021-08-17 | 上海诺基亚贝尔股份有限公司 | Antenna assembly |
| US11557823B2 (en) | 2020-01-29 | 2023-01-17 | Nokia Shanghai Bell Co., Ltd | Antenna component |
| TWI817495B (en) * | 2021-08-11 | 2023-10-01 | 美商雷森公司 | Transversely tapered frequency selective limiter |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2017206716B2 (en) | 2019-08-15 |
| JP2019502324A (en) | 2019-01-24 |
| EP3403293B1 (en) | 2020-04-08 |
| CN108475835B (en) | 2020-07-21 |
| WO2017123586A1 (en) | 2017-07-20 |
| KR102132548B1 (en) | 2020-08-05 |
| JP6625226B2 (en) | 2019-12-25 |
| KR20180103121A (en) | 2018-09-18 |
| EP3403293A1 (en) | 2018-11-21 |
| AU2017206716A1 (en) | 2018-07-19 |
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