CN108429436A - A kind of enhanced MOSFET driving circuits and Vehicular direct-current power supply change-over device - Google Patents
A kind of enhanced MOSFET driving circuits and Vehicular direct-current power supply change-over device Download PDFInfo
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- CN108429436A CN108429436A CN201810489348.XA CN201810489348A CN108429436A CN 108429436 A CN108429436 A CN 108429436A CN 201810489348 A CN201810489348 A CN 201810489348A CN 108429436 A CN108429436 A CN 108429436A
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- mosfet
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides a kind of enhanced MOSFET driving circuits, including N-type MOSFET, p-type MOSFET, resistance R3, capacitance C73；N-type MOSFET and p-type MOSFET is complementary pair pipe；The base internal of N-type MOSFET connects；The base internal of p-type MOSFET connects；The poles G of N-type MOSFET, the poles G of p-type MOSFET connect PMW circuit input ends；The poles S of N-type MOSFET connect ground terminal；The poles S of p-type MOSFET connect power supply Vdd, and the poles D of N-type MOSFET, the poles D of p-type MOSFET connect PMW circuit input ends；The poles S of N-type MOSFET and the S interpolar shunt capacitances C73 of p-type MOSFET；Parallel resistance R3 between PMW circuit input ends and ground terminal.The invention further relates to a kind of Vehicular direct-current power supply change-over devices.The present invention has higher current drive capability, meets the fast charging and discharging needs of switching tube input junction capacity, while drive waveforms can be kept precipitous, to improve the transfer efficiency of power supply.
Description
Technical field
The present invention relates to switch power source driving circuit more particularly to a kind of enhanced MOSFET driving circuits and Vehicular direct-current
Power supply change-over device.
Background technology
For the working frequency of modern Switching Power Supply mostly between 80~200KHz or more, switching tube generally uses MOSFET,
Its drive may be used by NPN PNP form to pipe push-pull circuit, dedicated IC driving chips etc..But common application, example
When such as the conversion power of converter smaller (such as within 500W) and switching frequency relatively low (within switching frequency 100KHz), open
The driving current for closing pipe is smaller, and above-mentioned type of drive may be used；But when output power is larger and switching frequency is higher, such as
When converter converts power 1KW, switching frequency 200KHz, traditional type of drive is difficult to meet the requirements；According to triode pair
Pipe is recommended, temporarily integrated to pipe without larger dissipated power although cheap, needs two combinations, duty larger space；
According to special IC chip, although peripheral components are few and application is easy, driving capability is insufficient and expensive；It was badly in need of one kind both
Switching frequency high driving circuit when meeting converter conversion power Datong District.
Invention content
The present invention is based at least one above-mentioned technical problem, it is proposed that a kind of enhanced MOSFET driving circuits, tool
There is higher current drive capability, meet the fast charging and discharging needs of switching tube input junction capacity, while driving wave can be kept
Shape is precipitous, to improve the transfer efficiency of power supply.
In order to achieve the above objectives, the present invention provides a kind of enhanced MOSFET driving circuits, including N-type MOSFET, p-type
MOSFET, resistance R3, capacitance C73；The N-type MOSFET and p-type MOSFET is complementary pair pipe；The N-type MOSFET's
Base internal connects；The base internal of the p-type MOSFET connects；The poles G of the N-type MOSFET, the p-type MOSFET G
Pole connects PMW circuit input ends；The poles S of the N-type MOSFET connect ground terminal；The poles S of the p-type MOSFET connect power supply
Vdd, the poles D of the N-type MOSFET, the p-type MOSFET the poles D connect PMW circuit input ends；The poles S of the N-type MOSFET
With the S interpolar shunt capacitances C73 of the p-type MOSFET；Parallel resistance R3 between the PMW circuit input ends and ground terminal；Institute
It is 1 μ F to state capacitance C73, and the frequency of the PMW circuit input ends is more than or equal to 200HZ；When it is negative to input square wave, the p-type
MOSFET is connected, the N-type MOSFET cut-offs；When input square wave is timing, the N-type MOSFET is connected, the p-type MOSFET
Cut-off.
Further, the N-type MOSFET is enhanced MOSFET, and the p-type MOSFET is enhanced MOSFET；It is described
The N-type MOSFET and p-type MOSFET forms complementary type common source single-ended push-pull circuit.
Further, the N-type MOSFET and the power of the p-type MOSFET are identical as parameter.
Further, the N-type MOSFET becomes one with the p-type mosfet package.
Further, the poles G of the p-type MOSFET and S interpolar parallel resistances R1, the resistance R1 are 20K ohm.
Further, the poles G of the N-type MOSFET and S interpolar parallel resistances R2, the resistance R2 are 20K ohm.
Further, the resistance R3 is 20K ohm.
A kind of Vehicular direct-current power supply change-over device, including the enhanced MOSFET driving circuits, DC/DC conversion electricity
Road, PMW circuits；The PMW circuits are connect with the enhanced MOSFET driving circuits；The DC/DC conversion circuits with it is described
Enhanced MOSFET driving circuits connection；The PMW circuit outputs pulse width signal；The enhanced MOSFET driving circuits receive
The pulse width signal simultaneously drives the DC/DC conversion circuits output 1KW rated power power supplys.
Compared with prior art, advantage of the invention is that：
The present invention provides a kind of enhanced MOSFET driving circuits, including N-type MOSFET, p-type MOSFET, resistance R3, electricity
Hold C73；N-type MOSFET and p-type MOSFET is complementary pair pipe；The base internal of N-type MOSFET connects；The substrate of p-type MOSFET
Inside connection；The poles G of N-type MOSFET, the poles G of p-type MOSFET connect PMW circuit input ends；The poles S of N-type MOSFET connect
Ground terminal；The poles S of p-type MOSFET connect power supply Vdd, the poles D of N-type MOSFET, the poles the D connection PMW circuits input of p-type MOSFET
End；The poles S of N-type MOSFET and the S interpolar shunt capacitances C73 of p-type MOSFET；It is in parallel between PMW circuit input ends and ground terminal
Resistance R3.The invention further relates to a kind of Vehicular direct-current power supply change-over devices.The present invention has higher current drive capability, meets
The fast charging and discharging that switching tube inputs junction capacity needs, while drive waveforms can be kept precipitous, to improve the conversion of power supply
Efficiency.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, below with presently preferred embodiments of the present invention and after coordinating attached drawing to be described in detail such as.
The specific implementation mode of the present invention is shown in detail by following embodiment and its attached drawing.
Description of the drawings
It is described in further detail below in conjunction with the accompanying drawings with embodiments of the present invention.
Fig. 1 is that the MOSFET of the use of the present invention drives component upper view；
Fig. 2 is that the MOSFET of the use of the present invention drives component bottom view；
Fig. 3 is the N-type MOSFET schematic diagrams of the use of the present invention；
Fig. 4 is the p-type MOSFET schematic diagrams of the use of the present invention；
Fig. 5 is a kind of enhanced MOSFET driver circuit schematic diagrams of the present invention.
Specific implementation mode
Understand to make the objectives, technical solutions, and advantages of the present invention more remove, it is with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the present invention, not
For limiting the present invention.
A kind of enhanced MOSFET driving circuits, as shown in figure 5, including N-type MOSFET, p-type MOSFET, resistance R3, electricity
Hold C73；N-type MOSFET and p-type MOSFET is complementary pair pipe；The base internal of N-type MOSFET connects；The substrate of p-type MOSFET
Inside connection；The poles G of N-type MOSFET, the poles G of p-type MOSFET connect PMW circuit input ends；The poles S of N-type MOSFET connect
Ground terminal；The poles S of p-type MOSFET connect power supply Vdd, the poles D of N-type MOSFET, the poles the D connection PMW circuits input of p-type MOSFET
End；The poles S of N-type MOSFET and the S interpolar shunt capacitances C73 of p-type MOSFET；It is in parallel between PMW circuit input ends and ground terminal
Resistance R3.In one embodiment, resistance R3 is 20K ohm, and capacitance C73 is 1 μ F, wherein the rated voltage of capacitance C73 is 25V.
Wherein, pulse width modulation (PWM) is the abbreviation of English " Pulse Width Modulation ", abbreviation pulsewidth modulation.It is
Using the numeral output of microprocessor come a kind of very effective technology for controlling analog circuit, it is widely used in surveying
Amount, communication, many fields such as power control and transformation.According to the variation of respective loads come the inclined of modulation crystal tube grid or base stage
It sets, to realize the change of switching power supply output transistor or transistor turns time, the output voltage of power supply can be made in work
Make to keep constant when condition variation.In the present embodiment, PWM converts power as 1KW, and working frequency is more than or equal to 200HZ.On
It states in complementary amplifying circuit, the positive half cycle and negative half period of amplified signal is distinguished by 1 N-channel MOS pipe and 1 P-channel metal-oxide-semiconductor,
Upper, lower tube is symmetrical.It, can be two power are identical, the identical complementary completion power output of parameter in order to apply upper convenience
Metal-oxide-semiconductor is integrated in 1 module, the module that the present invention is specially applied for SEPP single ended push-pull power output circuit is formed, using standard
Encapsulate, good parameter pairing, eliminate choosing pipe, pairing trouble, it is easy to use.
As shown in Figure 1 and Figure 2, it is that the MOSFET that the present invention uses drives component, N-type MOSFET, p-type MOSFET to use
The MOSFET of heat dissipation metal pedestal is to pipe, N-channel, P-channel complementary pair pipe, since N-channel, P-channel are packaged together to pipe, together
When metal pins do and radiate, keep the lifting of device temperature low, additionally due to encapsulating structure is compact, space is just slightly larger than single type MOSFET
Or p-type MOSFET；Wherein, 1 S1 is corresponded to, 2 correspond to G1, and 3 correspond to S2, and 4 correspond to G2, and 5 correspond to D2, and 6 correspond to D1；As shown in figure 3, N
Type MOSFET is enhanced MOSFET, and S1, G1, D1 correspond to the poles S, the poles G, the poles D of N-type MOSFET respectively；As shown in figure 4, p-type
MOSFET is enhanced MOSFET, and S2, G2, D2 correspond to the poles S, the poles G, the poles D of p-type MOSFET respectively.
As shown in figure 5, the complementary type common source SEPP single ended push-pull being made of 1 P-channel metal-oxide-semiconductor and 1 N-channel MOS pipe.With
Unlike common drain single-ended push-pull circuit, the drain electrode of two metal-oxide-semiconductors is connected together as output end；This circuit types corresponds to
Common emitter SEPP single ended push-pull power amplification circuit, voltage, electric current, gain, impedance operator are also similar to that common emitter is single-ended to be pushed away
Circuit is drawn, not only with the characteristic that common emitter circuit voltage gain is high, current gain is big, power gain is big, but also with output resistance
Anti- high advantage, while a series of advantages such as there is the stability of metal-oxide-semiconductor, good temp characteristic.Output impedance height just reduces
The step-up ratio of high-tension transformer is highly beneficial using such circuit as the power amplification of electric car power supply driving circuit
, and the manufacture of high-tension transformer is required low, especially thinner line footpath may be used in high-tension transformer armature winding
Coiling, efficiency are also higher.
In one embodiment, as shown in figure 5, the poles G of p-type MOSFET and S interpolar parallel resistances R1；Specifically, resistance R1
It is 20K ohm.The poles G of N-type MOSFET and S interpolar parallel resistances R2.Specifically, resistance R2 is 20K ohm.
In one embodiment, when it is negative to input square wave, P-channel conducting, N-channel cut-off.When input square wave is timing, N
Raceway groove is connected, P-channel cut-off.Input square wave constantly changes, and Q1, Q2 are just ceaselessly connected in turn, loads the current direction on R3
Also just constantly variation, completes amplification.
As shown in figure 5, in one embodiment, at 25 DEG C, N-type MOSFET, p-type MOSFET electric current ID be+30A ,-
30A；At 125 DEG C, N-type MOSFET, p-type MOSFET electric current ID be+30A, -18A；This driving circuit is easy to driving switch frequency
The higher occasion of rate；When the current driving ability of driving circuit is smaller；The input junction capacity of switching tube is basically unchanged, switch frequency
When rate improves, the rising edge and failing edge of switching tube drive waveforms can be smoothened, to reduce the transfer efficiency of power supply；
A kind of Vehicular direct-current power supply change-over device, including the enhanced MOSFET driving circuits, DC/DC conversion electricity
Road, PMW circuits；The PMW circuits are connect with the enhanced MOSFET driving circuits；The DC/DC conversion circuits with it is described
Enhanced MOSFET driving circuits connection；The PMW circuit outputs pulse width signal；The enhanced MOSFET driving circuits receive
The pulse width signal simultaneously drives the DC/DC conversion circuits output 1KW rated power power supplys.In one embodiment, it applies in 1KW
In DC driven product, there is higher current drive capability, the fast charging and discharging need of switching tube input junction capacity can be met
It wants, drive waveforms can be kept precipitous, to improve the transfer efficiency of power supply；The used device of this driving circuit is general
Electronic original part, such as SQJ500AEP, AOD609, materials are easy, and driving capability (driving current) is high, cheap；Meanwhile it is used
Device has higher dissipated power, thus can be low with the lifting of the temperature of device, improves the reliability of complete machine.
In one embodiment, the device used is general electronic original part, and such as SQJ500AEP, AOD609, materials are easy,
Driving capability (driving current) is high, cheap；As shown in the table, and the price of the UCC27322 general-purpose devices of TI is also 5.0
Member or so.
| Serial number | Model | Encapsulation | Brand | Unit price |
| 1 | AOD609 | D-PAK | AOS | 1.5 |
| 2 | SQJ500AEP | PAK SO-8L | VISHAY | 3.5 first |
| 3 | UCC27322 | SO-8 | TI | 5.0 |
On the other hand, in the present embodiment, as shown in the table, the device of use has higher dissipated power, thus can
It is low with the temperature lifting of device, improve the reliability of complete machine.
The present invention provides a kind of enhanced MOSFET driving circuits, including N-type MOSFET, p-type MOSFET, resistance R3, electricity
Hold C73；N-type MOSFET and p-type MOSFET is complementary pair pipe；The base internal of N-type MOSFET connects；The substrate of p-type MOSFET
Inside connection；The poles G of N-type MOSFET, the poles G of p-type MOSFET connect PMW circuit input ends；The poles S of N-type MOSFET connect
Ground terminal；The poles S of p-type MOSFET connect power supply Vdd, the poles D of N-type MOSFET, the poles the D connection PMW circuits input of p-type MOSFET
End；The poles S of N-type MOSFET and the S interpolar shunt capacitances C73 of p-type MOSFET；It is in parallel between PMW circuit input ends and ground terminal
Resistance R3.The invention further relates to a kind of Vehicular direct-current power supply change-over devices.The present invention has higher current drive capability, meets
The fast charging and discharging that switching tube inputs junction capacity needs, while drive waveforms can be kept precipitous, to improve the conversion of power supply
Efficiency.
Each technical characteristic of above example can be combined arbitrarily, to keep description succinct, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield is all considered to be the range of this specification record.
Only several embodiments of the present invention are expressed for above example, the description thereof is more specific and detailed, but can not
Therefore it is construed as limiting the scope of the patent.It should be pointed out that for those of ordinary skill in the art,
Under the premise of not departing from present inventive concept, various modifications and improvements can be made, these are all within the scope of protection of the present invention.
Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (8)
1. a kind of enhanced MOSFET driving circuits, it is characterised in that：Including N-type MOSFET, p-type MOSFET, resistance R3, capacitance
C73；The N-type MOSFET and p-type MOSFET is complementary pair pipe；The base internal of the N-type MOSFET connects；The P
The base internal of type MOSFET connects；The poles the G connection PMW circuits input of the poles G of the N-type MOSFET, the p-type MOSFET
End；The poles S of the N-type MOSFET connect ground terminal；The poles S of the p-type MOSFET connect power supply Vdd, the N-type MOSFET's
The poles D, the p-type MOSFET the poles D connect PMW circuit input ends；The S of the poles S of the N-type MOSFET and the p-type MOSFET
Interpolar shunt capacitance C73；Parallel resistance R3 between the PMW circuit input ends and ground terminal；The capacitance C73 is 1 μ F, described
The frequency of PMW circuit input ends is more than or equal to 200HZ；When it is negative to input square wave, the p-type MOSFET conductings, the N-type
MOSFET ends；When input square wave is timing, the N-type MOSFET conductings, the p-type MOSFET ends.
2. a kind of enhanced MOSFET driving circuits as described in claim 1, it is characterised in that：The N-type MOSFET is to increase
Strong type MOSFET, the p-type MOSFET are enhanced MOSFET；The N-type MOSFET and p-type MOSFET forms complementary type
Common source single-ended push-pull circuit.
3. a kind of enhanced MOSFET driving circuits as described in claim 1, it is characterised in that：The N-type MOSFET and institute
The power for stating p-type MOSFET is identical as parameter.
4. a kind of enhanced MOSFET driving circuits as described in claim 1, it is characterised in that：The N-type MOSFET and institute
P-type mosfet package is stated to become one.
5. a kind of enhanced MOSFET driving circuits as described in claim 1, it is characterised in that：The poles G of the p-type MOSFET
It it is 20K ohm with S interpolar parallel resistances R1, the resistance R1.
6. a kind of enhanced MOSFET driving circuits as claimed in claim 2 or claim 3, it is characterised in that：The N-type MOSFET's
The poles G and S interpolar parallel resistances R2, the resistance R2 are 20K ohm.
7. a kind of enhanced MOSFET driving circuits as claimed in claim 4, it is characterised in that：The resistance R3 is the Europe 20K
Nurse.
8. a kind of Vehicular direct-current power supply change-over device, it is characterised in that：Including enhanced MOSFET according to claims 1-8
Driving circuit, DC/DC conversion circuits, PMW circuits；The PMW circuits are connect with the enhanced MOSFET driving circuits；It is described
DC/DC conversion circuits are connect with the enhanced MOSFET driving circuits；The PMW circuit outputs pulse width signal；The enhancing
Type MOSFET driving circuits receive the pulse width signal and drive the DC/DC conversion circuits output 1KW rated power power supplys.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810489348.XA CN108429436A (en) | 2018-05-21 | 2018-05-21 | A kind of enhanced MOSFET driving circuits and Vehicular direct-current power supply change-over device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810489348.XA CN108429436A (en) | 2018-05-21 | 2018-05-21 | A kind of enhanced MOSFET driving circuits and Vehicular direct-current power supply change-over device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110224690A (en) * | 2019-06-04 | 2019-09-10 | 西安交通大学 | A kind of SiC MOSFET tandem drive circuit |
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| CN102412711A (en) * | 2011-11-22 | 2012-04-11 | 常熟市董浜镇华进电器厂 | High-speed driving circuit of power MOS tube |
| CN202931255U (en) * | 2012-11-20 | 2013-05-08 | 杭州华光光电有限公司 | Power amplification driving circuit applied to electric-power carrier communication |
| CN209250479U (en) * | 2018-05-21 | 2019-08-13 | 苏州舜唐新能源电控设备有限公司 | A kind of enhanced MOSFET driving circuit and Vehicular direct-current power supply change-over device |
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| US5140591A (en) * | 1988-12-15 | 1992-08-18 | Sgs-Thomson Microelectronics S.R.L. | Generator of drive signals for transistors connected in a half-bridge configuration |
| JP2001169534A (en) * | 1999-12-01 | 2001-06-22 | Toshiba Corp | Gate circuit of insulated gate semiconductor element |
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