CN108365794A - Light thermoelectric conversion component and its manufacturing method - Google Patents
Light thermoelectric conversion component and its manufacturing method Download PDFInfo
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- CN108365794A CN108365794A CN201810122047.3A CN201810122047A CN108365794A CN 108365794 A CN108365794 A CN 108365794A CN 201810122047 A CN201810122047 A CN 201810122047A CN 108365794 A CN108365794 A CN 108365794A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 239000002086 nanomaterial Substances 0.000 claims description 17
- 229910021389 graphene Inorganic materials 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 16
- 230000005619 thermoelectricity Effects 0.000 description 10
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 9
- 230000005611 electricity Effects 0.000 description 7
- 229910052961 molybdenite Inorganic materials 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000002322 conducting polymer Substances 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 5
- 239000002070 nanowire Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002057 nanoflower Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010930 yellow gold Substances 0.000 description 2
- 229910001097 yellow gold Inorganic materials 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002510 pyrogen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Compositions Of Macromolecular Compounds (AREA)
Abstract
The present invention provides light thermoelectric conversion component and its manufacturing method.The light thermoelectric conversion component includes substrate layer, photo-thermal unit and the electrode that insulating materials is formed；And the thermoelectric unit formed by thermoelectric material between photo-thermal unit and the substrate layer；Electrode is in electrical contact with thermoelectric unit；The photo-thermal unit is conductive.The method of the manufacture light thermoelectric conversion component is included in the thermoelectric unit that formation is formed by thermoelectric material between conductive photo-thermal unit and dielectric substrate layers；The thermoelectric unit and electrode are in electrical contact.
Description
Technical field
The method that the content of present invention is related to light thermoelectric conversion component and manufactures the light thermoelectric conversion component.
Background technology
There is abundant thermal energy, how the thermal energy effectively and efficiently collected in environment is heat of people's attention in environment
Point.Currently, the effective way for collecting thermal energy is thermoelectric generator.Thermoelectric generator is will be in environment based on Seebeck effect
Thermal energy is converted to electric energy.But such generator needs component electrode both ends in use that there are the larger temperature difference.But
The scene of the larger temperature difference of naturally occurring and few in environment removes the non-artificial this temperature difference of manufacture, this just significantly limits this
The extensive use of class generator.
Invention content
The present invention, which provides, to be had the light thermoelectric conversion component for improving photo-thermal photoelectric transformation efficiency and manufactures the photo-thermal electricity conversion group
The method of part.
In addition aspect will be partly articulated in the description that follows, and partly will be from apparent, the Huo Zheke of the description
Known by the practice of the embodiment provided.
According to an aspect of the present invention, light thermoelectric conversion component includes：The substrate layer that insulating materials is formed；With leading
Electrical photo-thermal unit；The thermoelectric unit formed by thermoelectric material between the photo-thermal unit and the substrate layer；And electricity
Pole；The electrode and the thermoelectric unit are in electrical contact.
In the light thermoelectric conversion component, optothermal material, which absorbs light, makes photo-thermal cell temperature rise, and temperature is higher than room
Temperature.And electrode remains at room temperature, i.e., there are the apparent temperature difference between photo-thermal unit and electrode, generate temperature gradient, thus generate plug
Bake effect (Seebeck effect).
Seebeck effect is also referred to as the first pyroelectric effect, refers to the temperature difference due to two kinds of different electric conductors or semiconductor
Pyroelectric phenomena that are different and causing the voltage difference between two kinds of substances.General provision thermoelectrical potential direction is：In hot junction, electric current is by negative flow direction
Just.In the circuit of photo-thermal power conversion device composition, photo-thermal unit is different with the temperature of electrode, then will occur in the loop
Thermocurrent, direction depend on the direction of temperature gradient.Hot junction carrier diffusion in the thermoelectric unit forms electricity to cold end
Stream forms potential difference since carrier is accumulated in hot junction and cold end.The present invention utilizes above-mentioned working mechanism, is made by light irradiation
Thermoelectric unit realizes effective thermoelectricity output, and then realizes the conversion of optical and thermal-electricity.
In one embodiment, photo-thermal unit and electrode are not overlapped in the projection of substrate layer.
Since if photo-thermal unit and electrode are close in the projection overlapping time hot cell of substrate layer and the distance of electrode,
It is difficult to form effective temperature gradient.Therefore photo-thermal unit and electrode are not overlapped in the projection of substrate layer, can be to avoid by photo-thermal
Temperature gradient reduces caused by unit transfers heat to electrode.
The photo-thermal unit is the composite membrane for including optothermal material and conductive material.Such photo-thermal unit can be simultaneously
Electrode as light thermoelectric conversion component.The optothermal material can be molybdenum disulfide, carbon nanotube, graphene oxide, Jin Huo
Copper sulfide.In one embodiment, the photo-thermal unit be include molybdenum disulfide, carbon nanotube, graphene, gold nano-material or
The optothermal material that the electrocondution slurry of copper sulfide is formed.The conductive material includes carbon or metal.Further, the electrocondution slurry
Further include carbon slurry or metal paste.In one embodiment, carbon slurry can be graphite conductor；Metal paste can be bronze, silver
Powder, copper powder or yellow gold.Further, the photo-thermal unit is the composite membrane for including molybdenum disulfide and graphene.
In one embodiment, the thermoelectric unit includes：Semi-conductor thermoelectric material by nanostructure form and polymerization
The composite material that object thermoelectric material is mixed to form.The nanostructure can be nano flower, nano wire, nanotube, nanometer rods,
Nanometer sheet, nano-pore or nano particle.In one embodiment, the semi-conductor thermoelectric material includes Te, Bi2Te3、SbTe3、
PbTe, BiSbTe or BiSbTe.
In one embodiment, the electrode is infrared light reflecting material.Infrared light reflecting material can be silver, aluminium, copper
Deng the material can be non-absorbing by infrared reflection, can prevent electrode and thermoelectric unit from heating up and reducing itself and light in this way
The temperature difference between hot cell, and then promote the transfer efficiency of optical and thermal-electricity.
According to another aspect of the present invention, the method for manufacturing light thermoelectric conversion component, this method include：With conduction
Property photo-thermal unit and dielectric substrate layers between form the thermoelectric unit that is formed by thermoelectric material；The thermoelectric unit and electrode
It is in electrical contact.
In one embodiment, the photo-thermal unit is mixed to form by optothermal material and electrocondution slurry.
In one embodiment, the photo-thermal unit is not be overlapped in the projection of substrate layer with electrode.
In one embodiment, the thermoelectric unit includes：Semi-conductor thermoelectric material by nanostructure form and polymerization
The composite material that object thermoelectric material is mixed to form.
It is defeated that the photo-thermal power conversion device of the present invention can make thermoelectric unit work obtain effective thermoelectricity by light
Go out, and then realizes the conversion of optical and thermal-electricity.In addition, photo-thermal unit is not be overlapped in the projection of substrate layer with electrode, can to avoid by
Temperature gradient reduces caused by photo-thermal unit transfers heat to electrode.In addition, also helping in thermoelectric unit surface overlying
More electrode and photo-thermal unit are covered, in favor of increasing the light-receiving area that photo-thermal unit receives illumination, improves the integrated of device
Degree.
Description of the drawings
The following description for the embodiment being considered in conjunction with the accompanying, above and/or other aspects will be apparent and be easier
Understand, in the accompanying drawings：
Fig. 1 be according to embodiments of the present invention one to embodiment three light thermoelectric conversion component structural schematic diagram；
Fig. 2 is the photo-thermal unit of light thermoelectric conversion component in the embodiment of the present invention two and the thermograph of electrode；
Fig. 3 A and Fig. 3 B are the thermoelectric current figures that the embodiment of the present invention two can show light thermoelectric conversion component.
Specific implementation mode
Illustrative embodiments are more fully described now with reference to attached drawing, identical reference numeral indicates identical member
Part.
Embodiment one：
Fig. 1 is light thermoelectric conversion component structural schematic diagram according to embodiment of the present invention.Referring to Fig.1, photo-thermal
Electric transition components include photo-thermal unit 10, electrode 30, insulating supporting substrate 40 and photo-thermal unit 10, electrode 30 and insulation
The thermoelectric unit 20 formed between support substrate 40.The light thermoelectric conversion component be for luminous energy to be changed into thermal energy, then will be hot
The transition components of electric energy can be changed into, and include for realizing the photo-thermal unit of photothermal conversion and for realizing heat to electricity conversion
Thermoelectric unit.
As shown in Figure 1, the projection of photo-thermal unit 10 and electrode 30 on insulating supporting substrate 40 is not overlapped.Because if
Photo-thermal unit 10 and electrode 30 are close in the projection overlapping time hot cell 10 of insulating supporting substrate 40 and the distance of electrode 30,
Lead to the transmission of heat, it is difficult to form effective temperature gradient.Therefore photo-thermal unit 10 and electrode 30 are in insulating supporting substrate 40
Projection be not overlapped, can be reduced to avoid temperature gradient caused by electrode 30 is transferred heat to by photo-thermal unit 10.
Thermoelectric unit 20 is shape by semi-conductor thermoelectric material and polymer the thermoelectric material mixing of nanostructure form
At thermoelectricity nano composite membrane formed.Semi-conductor thermoelectric material can be tellurium (Te), Bi2Te3、SbTe3、 PbTe、BiSbTe、
BiSbTe, the polymer thermoelectric material are poly- (3,4- Ethylenedioxy Thiophene)-poly- (styrene sulfonic acid).Nanostructure can
For nano wire, nanotube, nanometer rods, nanometer sheet, nano-pore or nano particle, but present embodiment is not limited only to this.Nano junction
Structure body has thermoelectricity capability more preferable than corresponding body structure.Particularly, in nanowire structures, that is, one-dimensional nano structure,
Since phonon is scattered in nanowire surface, thermoelectric material is caused to can reach lower thermal coefficient.Nanostructure types are partly led
Body can be arranged in conducting polymer along any direction, such as the semiconductor of nanostructure form can be regularly or irregularly
It is arranged in conducting polymer, can be arranged in parallel relative to substrate, can also be arranged by certain angle of inclination relative to substrate.
Photo-thermal unit 10 is formed by the optothermal material and electrocondution slurry of nanostructure form.Optothermal material can be
Molybdenum disulfide (MoS2), carbon nanotube, graphene oxide, gold nano-material of different shapes or copper sulfide, nanostructure can
Including nano flower, nano wire, nanotube, nanometer rods, nanometer sheet, nano-pore or nano particle, but present embodiment is not limited only to
This.Electrocondution slurry can be that carbon starches (graphite conductor), metal paste (bronze, silver powder, copper powder, yellow gold), and modified pottery
Porcelain slurry, but present embodiment is without being limited thereto.
Electrode 30 can be metal material, such as Au, Ag, Cu, Al, Pt, or combinations thereof or alloy, in addition, electrode 30 can be
Conductive material transparent and flexible, such as conducting polymer for example poly- (3,4- Ethylenedioxy Thiophene)-poly- (styrene sulfonic acid),
Graphene, conductive oxide such as tin indium oxide (ITO) and indium zinc oxide (IZO), carbon nanotube, or mixtures thereof formed.But this
Embodiment is without being limited thereto.
Insulating supporting substrate 40 can be flexible substrate, such as plastic supporting base such as PET and fabric substrate；In addition, insulating supporting
Substrate 40 can be non-flexible substrate, such as glass substrate；But present embodiment is without being limited thereto.
Embodiment two：
The light thermoelectric conversion component for preparing Fig. 1 structures, using MoS2Two-dimension nano materials are as optothermal material. MoS2Two dimension
Nano material is a kind of efficient optothermal material, and photothermal conversion efficiency is high.It is existing to utilize MoS2The characteristic of infrared light is absorbed, it will
It is placed in research use for cancer treatment, i.e. MoS in organism as optothermal material2Conversion of the light to heat, but mesh may be implemented
It is preceding to MoS2Research as photo-thermal electricity conversion medium has no relevant report.Fig. 2 is the photo-thermal unit 10 of light thermoelectric conversion component
With the thermograph of electrode 30.The photo-thermal unit 10 is the MoS that molybdenum disulfide and graphene slurry are mixed to form2/ graphene
Film, the electrode are Ag electrodes.With reference to figure 2, as the Infrared irradiation MoS that luminous power is 100mW, wavelength is 808nm2/ graphite
When alkene film surface, surface temperature can reach 64 DEG C；The infrared light is not irradiated to MoS2When/graphene membrane surface, the surface
Temperature maintains 24 DEG C of room temperature；When the Infrared irradiation is to Ag electrode surfaces, surface temperature can reach 33 DEG C；This is infrared
When light is not irradiated to Ag electrode surfaces, surface temperature maintains 24 DEG C of room temperature.If Fig. 2 shows infrared to be only irradiated to nothing
MoS2The thermoelectric conversion component surface of/graphene film, then the temperature, which is obviously far below, MoS2The light heat to electricity conversion of/graphene film
The photic hot temperature of component, and if without infrared radiation to MoS2/ graphene membrane surface, then without apparent photic thermal effect.
Light thermoelectric conversion component surface is subjected to illumination, such as when infrared light, sunlight, 10 extinction pyrogenicity of photo-thermal unit,
Lead to the temperature rise of itself, be higher than room temperature, this makes photo-thermal cell temperature increase, and electrode 30 stills remain in room temperature i.e. two
There are the apparent temperature difference between electrode, make in thermoelectric unit 20 that there are apparent temperature gradients.In addition, being applied to photo-thermal electricity when removing
When illumination on transition components, 10 no light of photo-thermal unit is absorbable, and 10 temperature of photo-thermal unit does not increase to be slowly drop down to instead
Room temperature, make between photo-thermal unit 10 and electrode 30 without in the apparent temperature difference i.e. thermoelectric unit 20 without apparent temperature gradient.Due to thermoelectricity
The thermoelectric property of unit 20 is based on Seebeck effect there are when temperature gradient inside thermoelectric unit 20, in thermoelectric unit 20
Hot junction carrier can diffuse to cold end and form electric current, since carrier is accumulated in hot junction and cold end, in photo-thermal unit 10
Potential difference, that is, thermoelectric voltage is formed between electrode 30.As described above, light thermoelectric conversion component can convert light energy into thermal energy,
Electric energy is converted heat energy into again.
Fig. 3 A and Fig. 3 B are the thermoelectric current figures for showing light thermoelectric conversion component.Fig. 3 A and Fig. 3 B, which are shown, works as photo-thermal
(photo-thermal unit is MoS to electric transition components2/ graphene film, electrode are Ag electrodes, and thermoelectric unit is that Te/PEDOT is nano combined
Film, insulating supporting substrate be PET) formed thermoelectricity output.Fig. 3 A explanation when light thermoelectric conversion component by wavelength be 808nm and
The relationship of thermoelectric current and light application time when luminous power is the Infrared irradiation of 100mW.With reference to figure 3A, when light application time is 60s
Corresponding electric current output is 0.23nA.It is 808nm by wavelength when light thermoelectric conversion component that Fig. 3 B, which illustrate, and luminous power is 100mW
Infrared irradiation when thermoelectric current and light application time relationship.
Fig. 3 A and Fig. 3 B show wavelength is 808nm and luminous power is 100mW Infrared irradiation to light thermoelectric conversion component
Surface and the DC current output for having opposite direction when light thermoelectric conversion component forward and reverse accesses circuit, that is, show group
Part can obtain effective thermoelectricity output, if cancelling illumination, thermoelectricity output can gradually decrease down 0.Fig. 3 A and Fig. 3 B show wave
A length of 808nm and luminous power be the Infrared irradiation of 100mW to light thermoelectric conversion component surface when, the increase energy of light application time
It is enough effectively increased thermoelectricity output, but may eventually reach saturation state.
It can be found that it can be defeated come the thermoelectricity for improving light thermoelectric conversion component by adjusting light application time by above-mentioned experiment
Go out.
Embodiment three：
The method of manufacture light thermoelectric conversion component prepares thermoelectric unit as shown in Figure 1 according to the embodiment of the present invention
20, and form the photo-thermal unit 10 formed by optothermal material and electrocondution slurry and electrode 30 at 20 both ends of thermoelectric unit.Electrode 30
Can be that metal material such as silver-colored (Ag), conductive oxide or conducting polymer are formed.Silver electrode is infrared light reflecting material.It is infrared
Line reflection material can also be silver, aluminium, copper etc., which can be non-absorbing by infrared reflection, can prevent electrode in this way
And thermoelectric unit heats up and reduces its temperature difference between photo-thermal unit, and then promote the transfer efficiency of optical and thermal-electricity.
In order to easily manufactured, thermoelectric unit 20 is directly formed on insulating supporting substrate 40.Insulating supporting substrate 40 is modeling
Material such as PET or fabric.The specific manufacturing method of thermoelectric unit is as follows：Nanostructure semiconductor powder such as Te is added to organic solvent
As formed in the liquid of isopropanol and conducting polymer such as poly- (3,4- Ethylenedioxy Thiophenes)-poly- (styrene sulfonic acid) composition
Mixed liquor, then the mixed liquor is coated on insulating supporting substrate, and be dried at room temperature for.
Photo-thermal unit as shown in Figure 1 is prepared, in order to easily manufactured, photo-thermal unit 10 is directly prepared on thermoelectric unit.
10 specific manufacturing method of photo-thermal unit is as follows:Nanostructure optothermal material powder such as molybdenum disulfide (MoS2) it is added to graphene
Mixed liquor is formed in slurry, then the mixed liquor is coated on thermoelectric unit, and in 60 DEG C of dry 4h.
It should be understood that illustrative embodiments described herein should consider and be not used in limitation in the sense of description only
Purpose.The description of features or aspect in various embodiments should be typically considered to can be used in other embodiments
Other similar features or aspects.
Claims (10)
1. smooth thermoelectric conversion component, it is characterised in that including：
The substrate layer that insulating materials is formed；
Conductive photo-thermal unit；
The thermoelectric unit formed by thermoelectric material between the photo-thermal unit and the substrate layer；
And electrode；
The electrode and the thermoelectric unit are in electrical contact.
2. smooth thermoelectric conversion component according to claim 1, it is characterised in that：
The photo-thermal unit and the electrode are not overlapped in the projection of substrate layer.
3. smooth thermoelectric conversion component according to claim 1, it is characterised in that：The photo-thermal unit be include optothermal material
With the composite membrane of conductive material.
4. smooth thermoelectric conversion component according to claim 3, it is characterised in that：The optothermal material be include curing
The material of molybdenum, carbon nanotube, graphene, gold nano-material or copper sulfide.
5. smooth thermoelectric conversion component according to claim 1, it is characterised in that：The thermoelectric unit includes：By nano junction
The composite material that the semi-conductor thermoelectric material and polymer thermoelectric material of structure body form are mixed to form.
6. smooth thermoelectric conversion component according to claim 5, it is characterised in that：The semi-conductor thermoelectric material include Te,
Bi2Te3、SbTe3, PbTe, BiSbTe or BiSbTe.
7. smooth thermoelectric conversion component according to claim 1, it is characterised in that：The electrode is infrared light reflecting material.
8. the method for manufacturing light thermoelectric conversion component, which is characterized in that this method includes：
The thermoelectric unit formed by thermoelectric material is formed between conductive photo-thermal unit and dielectric substrate layers；The heat
Electric unit is in electrical contact with electrode.
9. according to the method described in claim 8, it is characterized in that：Projection of the photo-thermal unit with electrode in substrate layer does not weigh
It is folded.
10. according to the method described in claim 8, it is characterized in that：The photo-thermal unit is mixed by optothermal material and electrocondution slurry
It closes and is formed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037423A (en) * | 2018-08-10 | 2018-12-18 | 济南大学 | A kind of multi-functional thermoelectric power generation device and the preparation method and application thereof having both extinction and catalytic performance |
| CN110289348A (en) * | 2019-04-24 | 2019-09-27 | 电子科技大学 | A kind of the ink printing-type preparation method and its structure of light auxiliary thermo-electric device |
Citations (5)
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| CN104868045A (en) * | 2014-02-21 | 2015-08-26 | 清华大学 | Photoelectric converter and application thereof |
| US20170186932A1 (en) * | 2015-12-23 | 2017-06-29 | Unist (Ulsan National Institute Of Science And Technology) | Spin thermoelectric device |
| CN108400748A (en) * | 2018-03-14 | 2018-08-14 | 东南大学 | Micro-nano generator based on nano thin-film rectangle idol array and nanometric PN junctions |
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| CN109037423A (en) * | 2018-08-10 | 2018-12-18 | 济南大学 | A kind of multi-functional thermoelectric power generation device and the preparation method and application thereof having both extinction and catalytic performance |
| CN109037423B (en) * | 2018-08-10 | 2022-05-24 | 济南大学 | Multifunctional thermoelectric power generation device with light absorption and catalysis performances as well as preparation method and application thereof |
| CN110289348A (en) * | 2019-04-24 | 2019-09-27 | 电子科技大学 | A kind of the ink printing-type preparation method and its structure of light auxiliary thermo-electric device |
| CN110289348B (en) * | 2019-04-24 | 2021-05-14 | 电子科技大学 | Printing ink printing type preparation method and structure of photo-assisted thermoelectric device |
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