CN108336498A - A kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology - Google Patents
A kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology Download PDFInfo
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- CN108336498A CN108336498A CN201710046673.4A CN201710046673A CN108336498A CN 108336498 A CN108336498 A CN 108336498A CN 201710046673 A CN201710046673 A CN 201710046673A CN 108336498 A CN108336498 A CN 108336498A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 title abstract description 9
- 230000008878 coupling Effects 0.000 title abstract description 5
- 238000010168 coupling process Methods 0.000 title abstract description 5
- 238000005859 coupling reaction Methods 0.000 title abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 230000004043 responsiveness Effects 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/225—Supports; Mounting means by structural association with other equipment or articles used in level-measurement devices, e.g. for level gauge measurement
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Abstract
The present invention discloses a kind of metal antenna coupling THz wave thermal detector structure based on CMOS technology, using the Terahertz thermal detector structure based on the antenna coupling under CMOS technology, using the higher antenna array receiver THz wave of receptance, the frequency selectivity to incidence wave may be implemented, and help to be promoted the responsiveness of detector, matched polysilicon resistance is followed by using antenna, by antenna receive electromagnetic energy as much as possible be converted into thermal energy, to help to promote the responsiveness of detector.Using the NMOS tube temperature sensor of the common source and drain short circuit of infrared regime, area occupied is small, easy to manufacture, and cost is relatively low.
Description
Technical field
The invention belongs to semiconductor probe fields, more specifically, belonging to based on CMOS (Complementary Metal
Oxide Semiconductor) technique THz wave the electromagnetic wave of 0.3THz~30THz (wave band be) hot-probing field.
Background technology
Terahertz (Terahertz, THz) wave refers to a kind of in electromagnetic wave, terahertz between millimere-wave band and infrared band
Hereby frequency range is defined between 0.3THz to 30THz, belongs to electronics and optical juncture area.Since THz wave is in electricity
The specific position of electromagnetic spectrum has energy of a quantum low, small to mankind's injury, and penetration capacity is strong, close to the radiation of numerous celestial bodies
The superior characteristic such as peak wavelength so that THz imaging technology is in safety monitoring, and the fields such as celestial body detection are increasingly by weight
Depending on.And key technology one of of the terahertz detection as THz imaging technology, it is also constantly promoted in research field temperature.Mesh
Before, mainly there is two major classes mainstream terahertz detector：One kind is the field-effect tube self-mixing detector based on CMOS technology, this
Detector develops relative maturity at present, but covers the low-frequency range that frequency range is Terahertz.Another kind of is thermal detector, detectable higher
Terahertz wave band, but the semiconductor heat detection method based on bolometer needs special superconductor, cost higher；
Using thermal detector made of MEMS (Micro-Electro-Mechanical System) technique, complex process is of high cost, nothing
Method mass production；Imitative infrared hot-probing method based on COMS standard technologies, responsiveness need to be improved.
Invention content
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of, and the antenna based on CMOS technology couples terahertz
Hereby wave thermal detector structure, under standard CMOS process, in conjunction with temperature in antenna principle of absorption in microwave sounding and infrared acquisition
Sensing principle is converted the electromagnetic energy of absorption by antenna and resistance using " metal antenna-resistance v. temperature senses " structure
For heat, then heat detected by temperature sensor, is electric signal output by converting heat, to reach detection THz wave
Purpose reduces the cost of terahertz detector, covers higher Terahertz frequency, improves detector responsiveness.
The technical purpose of the present invention is achieved by following technical proposals：
A kind of antenna based on CMOS technology couples THz wave thermal detector structure, and the top-level metallic in CMOS technology is made
To receive the antenna of THz wave, polysilicon resistance is connected by through-hole with top-level metallic, and temperature sensor is placed on polysilicon
The side of resistance selects the side of the most hot point of polysilicon resistance；Temperature sensor is the MOS (Metal- of grid leak short circuit
Oxide-Semiconductor) pipe temperature sensor.
In the technical solution of the present invention, using based under CMOS technology antenna coupling Terahertz thermal detector structure,
There is following benefit：1) CMOS standard technologies are based on, the technique is at present using extensively, and easy to manufacture, cost is relatively low, and at this
Manufactured detector under technique, may finally be made detector array, be followed by reading circuit, digital analog converter, at digital picture
Module is managed, Terahertz imaging sensor is made.The final miniaturization for realizing terahertz imaging sensor and integrated.2) it uses and connects
By the higher antenna array receiver THz wave of rate, the frequency selectivity to incidence wave may be implemented, and help to be promoted and visit
Survey the responsiveness of device.3) matched polysilicon resistance is followed by using antenna, antenna is received into electromagnetic energy as much as possible
It is converted into thermal energy, to help to promote the responsiveness of detector.4) NMOS of the common source and drain short circuit of infrared regime is finally used
Pipe temperature sensor, area occupied is small, can effectively reduce overall volume.
Description of the drawings
Fig. 1 is " metal antenna-resistance v. temperature sensing " detector principle schematic in the present invention.
Fig. 2 is detector Simple process schematic diagram in the present invention.
Fig. 3 is NMOS source and drain short circuit schematic diagram in THz wave thermal detector structure in the present invention.
Fig. 4 is antenna S parameter analogous diagram in the present invention.
Specific implementation mode
The technical solution further illustrated the present invention with reference to specific embodiment.
As shown in attached drawing 1-4, terahertz detector theory structure is by reception electromagnetic wave device metal antenna, load resistance
It is formed with temperature sensor, load resistance is heat-producing unit polysilicon resistance, and whole panel detector structure is based on standard CMOS process
Manufacture.M6 or M5 layers of metal in CMOS technology are used for manufacturing the antenna for receiving THz wave, that is, use top-level metallic as day
Line, because top-level metallic is far from substrate, to reduce consumption of the substrate to electromagnetic wave.Polysilicon resistance passes through through-hole and top-level metallic
Antenna is connected.The side of the most hot point of polysilicon resistance is arranged in temperature sensor；Temperature sensor is the MOS of grid leak short circuit
(Metal-Oxide-Semiconductor) pipe temperature sensor.201 be that (this sentences antenna work to the antenna made of metal layer
For being made for layer 5), 202 be polysilicon resistance, and 203 be the MOS (Metal-Oxide- of grid leak short circuit
Semiconductor) pipe temperature sensor, 204 be silicon substrate, and 205 be top layer passivation layer.
The process of detection THz wave is as follows：
(1) radiation-absorption process：For being radiated the THz wave of the different frequency on detector, coupled on detector
Antenna can be selected into line frequency, select THz wave of the wave band in antennas near frequency of heart and absorbed, for entering in Fig. 1
The electromagnetic wave for the different frequency penetrated, antenna only can generate resonance with a kind of wavelength and the matched electromagnetic wave of size.At this point, antenna quilt
Excitation of electromagnetic wave generates induced electromotive force, and generates electric current in conductive surface so that the electromagnetic energy of THz wave is absorbed.
Antenna herein selects the metal antenna of transformation efficiency, and the dipole antenna of simple structure can be selected.
Dipoles scatter sub-antenna designs the arm of antenna according to lambda/4 (lambda is the electromagnetic wavelength received) rule
It is long.Antenna is emulated by HFSS electromagnetic simulation softwares, obtains the size of the Terahertz antenna in required working frequency.
And then when instructing that chip is made, the corresponding layout drawing of antenna.By the size of antenna and the correspondence of wavelength, change antenna
Size, you can obtain 0.8THz, the responsive antenna under tri- kinds of frequencies of 2.9THz, 28.3THz.Thermal detector in the present invention,
Both Terahertz higher band can be covered, can also cover it compared with low band.For this sentences the antenna of 28.3THz, its brachium H is
1um, width W are 0.44um.Its antenna S parameter analogous diagram is as shown in Figure 4.Work as S<When 15dB, corresponding frequency is the work of antenna
Working frequency.As can be seen from the figure this Terahertz Antenna Operation frequency range is 28.12THz~28.36THz.
The wavelength of electromagnetic wave in the dielectric is：
Wherein, c is the wavelength 3*10 of electromagnetic wave in a vacuum8M/s, f are the frequency of electromagnetic wave.ε is dielectric opposite
Dielectric constant.
For dipole antenna, brachium takes initial value, W~H/20, gap~H/20 to take just according to a quarter of wavelength
Value, then carries out HFSS emulation, and optimization obtains optimal solution.
Wherein it should be noted that antenna size will be constrained by CMOS technology, antenna width is in addition to meeting above-mentioned condition
Except, also to meet W>=0.28um (by taking 0.18um CMOS as an example).H at 1.23 μm~250 μm, can correspond to 0.3THz~
Frequency range μ between 30THz.
(2) electromagnetism-hot-cast socket process：Antenna is followed by the polysilicon resistance on substrate, resistance R in corresponding diagram 1.Polysilicon electricity
The electric current that resistance reception antenna flows through, generates thermal losses, converts the electromagnetic energy that antenna receives to thermal energy.Herein, polysilicon electricity
Resistance is wanted and antenna match, makes heat is as much as possible to be strapped among polysilicon resistance, increases conversion of the electromagnetic wave energy to heat
Efficiency, to improve the responsiveness of temperature sensor and detector.
(3) thermo-electrically transfer process：Hygrosensor is placed near the hottest point of polysilicon resistance, Terahertz is detected
Converting heat is electric signal output by the heat that wave generates, and to obtain result of detection, completes the detection to THz wave.This
The structure of the temperature sensor at place is selected：Grid leak short circuit NMOS (N-Metal-Oxide- under constant current source
Semiconductor it) manages, as shown in Figure 3.Output voltage Vout=VGS.By taking breadth length ratio W/L=2/1 as an example, the temperature passes at this time
The temperature coefficient dV of sensorGS/ dT=0.7mv/ DEG C or so.In use, breadth length ratio can be changed according to actual needs.
Terahertz detector evaluation index is responsiveness Rv=Vout/Pin。VoutFor the output voltage of hygrosensor, PinFor
Incident THz wave power will be in P to improve the responsiveness of terahertz detectorinWhen certain, V is improvedout.The present invention
It is converted into the efficiency of thermal energy by improving electromagnetic energy on heat-transfer path, i.e., antenna is connected on polysilicon resistance, passes through resistance
Thermoelectricity is lost, and increases Wen Sheng.To improve the temperature that temperature sensor perceives.Improve output voltage Vout, finally obtain response
The promotion of rate.
Illustrative description has been done to the present invention above, it should explanation, the case where not departing from core of the invention
Under, any simple deformation, modification or other skilled in the art can not spend the equivalent replacement of creative work equal
Fall into protection scope of the present invention.
Claims (6)
1. a kind of antenna based on CMOS technology couples THz wave thermal detector structure, which is characterized in that in CMOS technology
Top-level metallic is connected by through-hole with top-level metallic as the antenna for receiving THz wave, polysilicon resistance, and temperature sensor is put
It sets in the side of polysilicon resistance, panel detector structure is manufactured based on standard CMOS process.
2. a kind of antenna based on CMOS technology according to claim 1 couples THz wave thermal detector structure, special
Sign is that temperature sensor is placed on the side of the most hot point of polysilicon resistance.
3. a kind of antenna based on CMOS technology according to claim 1 or 2 couples THz wave thermal detector structure,
It is characterized in that, temperature sensor is the metal-oxide-semiconductor temperature sensor of grid leak short circuit.
4. a kind of antenna based on CMOS technology according to claim 1 or 2 couples THz wave thermal detector structure,
It is characterized in that, the antenna for receiving THz wave is dipole antenna, brachium H is 1.23 μm~250 μm.
5. a kind of antenna based on CMOS technology according to claim 3 couples THz wave thermal detector structure, special
Sign is that the antenna for receiving THz wave is dipole antenna, and brachium H is 1.23 μm~250 μm.
6. the method for carrying out detection THz wave using the THz wave thermal detector structure as described in one of claim 1,
It is characterized in that, carries out as steps described below：
(1) radiation-absorption process：For being radiated the THz wave of the different frequency on detector, the day coupled on detector
Line can be selected into line frequency, selected THz wave of the wave band in antennas near frequency of heart and absorbed, antenna is swashed by electromagnetic wave
Generation induced electromotive force is encouraged, and electric current is generated in conductive surface so that the electromagnetic energy of THz wave is absorbed；
(2) electromagnetism-hot-cast socket process：The electric current that polysilicon resistance reception antenna flows through generates thermal losses, the electricity that antenna is received
Magnetic energy is converted into thermal energy, and polysilicon resistance is wanted and antenna match, makes heat is as much as possible to be strapped among polysilicon resistance,
Increase electromagnetic wave energy to hot transformation efficiency, to improve the responsiveness of temperature sensor and detector；
(3) thermo-electrically transfer process：Hygrosensor is placed near the hottest point of polysilicon resistance, detection THz wave production
Converting heat is electric signal output by raw heat, to obtain result of detection, completes the detection to THz wave.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216382A (en) * | 2018-09-19 | 2019-01-15 | 天津大学 | Terahertz micro-metering bolometer based on CMOS technology |
| CN109443550A (en) * | 2018-09-19 | 2019-03-08 | 天津大学 | Terahertz micro-metering bolometer based on CMOS technology multifrequency Meta Materials absorbing structure |
| CN111063989A (en) * | 2019-12-09 | 2020-04-24 | 江苏大学 | On-chip multi-band terahertz three-dimensional antenna |
| CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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|---|---|---|---|---|
| CN102575961A (en) * | 2009-10-23 | 2012-07-11 | 国际商业机器公司 | Terahertz detector comprising a capacitively coupled antenna |
| US20130082345A1 (en) * | 2011-10-02 | 2013-04-04 | International Business Machines Corporation | Hybrid FPA for Thz imaging with an antenna array, coupled to CMOS-MEMS thermal sensors, implementing per-pixel ES actuation and enabling tuning, correlated double sampling and AM modulation |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216382A (en) * | 2018-09-19 | 2019-01-15 | 天津大学 | Terahertz micro-metering bolometer based on CMOS technology |
| CN109443550A (en) * | 2018-09-19 | 2019-03-08 | 天津大学 | Terahertz micro-metering bolometer based on CMOS technology multifrequency Meta Materials absorbing structure |
| CN109216382B (en) * | 2018-09-19 | 2021-06-25 | 天津大学 | Terahertz micro-bolometer based on CMOS (complementary Metal oxide semiconductor) process |
| CN111063989A (en) * | 2019-12-09 | 2020-04-24 | 江苏大学 | On-chip multi-band terahertz three-dimensional antenna |
| CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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