CN108336093A - Substrat structure and preparation method thereof - Google Patents
Substrat structure and preparation method thereof Download PDFInfo
- Publication number
- CN108336093A CN108336093A CN201810054092.XA CN201810054092A CN108336093A CN 108336093 A CN108336093 A CN 108336093A CN 201810054092 A CN201810054092 A CN 201810054092A CN 108336093 A CN108336093 A CN 108336093A
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- photosensitive material
- material layer
- support substrate
- binding force
- substrat structure
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- -1 silazane Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 14
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 11
- 238000007711 solidification Methods 0.000 claims description 8
- 230000008023 solidification Effects 0.000 claims description 8
- 239000004695 Polyether sulfone Substances 0.000 claims description 5
- 229920006393 polyether sulfone Polymers 0.000 claims description 5
- 229940114081 cinnamate Drugs 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004631 polybutylene succinate Substances 0.000 claims description 4
- 229920002961 polybutylene succinate Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 208000021760 high fever Diseases 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention relates to a kind of substrat structures and preparation method thereof.The production method of substrat structure includes the following steps：Support substrate is provided；The photosensitive material layer after exposure is formed in support substrate, the photosensitive material layer after exposure has the first binding force area and the second binding force area, wherein the binding force of the first binding force area and support substrate is less than the binding force in the second binding force area and support substrate；And flexible substrates are formed on photosensitive material layer after exposure, the photosensitive material in the first binding force area is removed with flexible substrates, patterned photosensitive material layer and patterned flexible base layer are obtained, to obtain substrat structure.In the production method of above-mentioned substrat structure, the the first binding force area and the second binding force area of arbitrary graphic pattern can be obtained by exposure, since the binding force in the first binding force area and support substrate is smaller, to be easy to remove the photosensitive material in the first binding force area from support substrate with flexible substrates, to realize the pattern diversification of substrat structure.
Description
Technical field
The present invention relates to display technology fields, more particularly to a kind of substrat structure and preparation method thereof.
Background technology
In recent years, the display device with flexible substrates is because of its flexible characteristic, in mobile or hand-held display
In be with a wide range of applications.Plastic-substrates (such as polyimide substrate, polyether sulfone with excellent heat resistance and intensity
Substrate etc.) it is often used as flexible substrates.
The manufacturing method of traditional substrat structure is the precursor solution of the flexible substrate in support substrate, cures it
After form flexible substrates.However, the manufacturing method of traditional substrat structure can only obtain this single figure of rectangle, cannot achieve
Pattern diversification.
Invention content
Based on this, it is necessary to which, for how to realize the diversified problem of pattern, pattern diversification can be realized by providing one kind
Substrat structure and preparation method thereof.
A kind of production method of substrat structure, includes the following steps：
Support substrate is provided；
The photosensitive material layer after exposure is formed in the support substrate, the photosensitive material layer after the exposure has first
Binding force area and the second binding force area, wherein the binding force of first binding force area and the support substrate is less than described the
The binding force in two binding force areas and the support substrate；
And flexible substrates are formed on the photosensitive material layer after the exposure, it will be photosensitive in first binding force area
Material is removed with flexible substrates, patterned photosensitive material layer and patterned flexible base layer is obtained, to obtain substrate knot
Structure.
In the production method of above-mentioned substrat structure, the first binding force area and second of arbitrary graphic pattern can be obtained by exposure
Binding force area, since the binding force in the first binding force area and support substrate is smaller, to be easy the sense in the first binding force area
Luminescent material is removed with flexible substrates from support substrate, to obtain the photosensitive material layer and flexible substrates of corresponding pattern, from
And realize the pattern diversification of substrat structure.Meanwhile the production method of above-mentioned substrat structure is simply easily realized, production work is suitable for
Skill needs.
It is patterned using the technique of exposure in the production method of the substrat structure of the present invention, with traditional patterning side
Method is compared, and exposure technology can accurately control size and the position of pattered region, the pattern arbitrarily wanted.
In addition, the area for obtaining flexible substrates using exposure technology can reduce stress in thin film than original reduction.
Reducing stress in thin film has following benefit：Substrate warp amount reduces, and eliminates the offset of subsequent patterning processing procedure contraposition；Follow-up process into
When row film stack, annealing, film layer tearing risk can be reduced；Device bending resistance improves after stripping.
It is in the step of photosensitive material layer after forming exposure in the support substrate in one of the embodiments,：
The precursor solution of photosensitive material is coated in the support substrate, to the precursor solution of the photosensitive material into
Row exposure, the photosensitive material layer after then being exposed after solidification.
It is in the step of photosensitive material layer after forming exposure in the support substrate in one of the embodiments,：
It is coated with the precursor solution of photosensitive material in the support substrate, obtains photosensitive material layer after solidification, later
The photosensitive material layer is exposed, the photosensitive material layer after being exposed.
The material of the photosensitive material layer is positive photosensitive material in one of the embodiments, and exposure area forms institute
The first binding force area is stated, non-exposed areas forms second binding force area.
The material of the photosensitive material layer is negativity photosensitive material in one of the embodiments, and non-exposed areas is formed
First binding force area, exposure area form second binding force area.
In addition, a kind of substrat structure is also provided, including：
Support substrate；
Patterned photosensitive material layer is arranged in the support substrate；
And patterned flexible substrates, it is arranged on the patterned photosensitive material layer；
Above-mentioned substrat structure is obtained using above-mentioned production method, can obtain the first binding force of arbitrary graphic pattern by exposure
Area and the second binding force area, since the binding force in the first binding force area and support substrate is smaller, to be easy the first binding force
Photosensitive material in area is removed with flexible substrates from support substrate, to obtain the photosensitive material layer and flexibility of corresponding pattern
Substrate, to realize the pattern diversification of substrat structure.Meanwhile the production method of above-mentioned substrat structure is simply easily realized, can be fitted
Production technology is answered to need.
Wherein, projection of the patterned flexible substrates in the support substrate and the patterned photosensitive material
Projection of the layer in the support substrate overlaps.
The material of the photosensitive material layer is positive photosensitive material, the Positive photosensitive material in one of the embodiments,
Material is selected from least one of silane coupling agent, silazane, polymethyl methacrylate and poly butylene succinate.
The material for stating photosensitive material layer in one of the embodiments, is negativity photosensitive material, the negativity photosensitive material
Selected from least one of silane coupling agent, poly(4-hydroxystyrene) and polyvinyl cinnamate.
The thickness of the photosensitive material layer is 100nm~10 μm in one of the embodiments,.
The material of the patterned flexible substrates is polyimides, poly terephthalic acid in one of the embodiments,
Second diester, polyethylene naphthalate or polyether sulfone.
Description of the drawings
Fig. 1 be the substrat structure of an embodiment of the present invention production method in photosensitive material is coated in support substrate
The side schematic view of precursor solution；
Fig. 2 be an embodiment of the present invention substrat structure production method in formed exposure after photosensitive material layer side
Face schematic diagram；
Fig. 3 be an embodiment of the present invention substrat structure production method in formed flexible substrates side schematic view；
Fig. 4 is the side schematic view of the substrat structure of an embodiment of the present invention；
Fig. 5 is the floor map of the substrat structure of an embodiment of the present invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific implementation mode be described in detail.Many details are elaborated in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case of violating intension of the present invention, therefore the present invention is not limited by following public specific embodiment.
The production method of the substrat structure of one embodiment, includes the following steps：
S10, support substrate 110 is provided.
Fig. 1 is referred to, generally use rigid substrates are as support substrate 110, such as substrate of glass.
S20, the photosensitive material layer 120 after exposure is formed in support substrate 110, the photosensitive material layer 120 after exposure has
There are the first binding force area 121 and the second binding force area 122, wherein the binding force in the first binding force area 121 and support substrate 110
Less than the binding force in the second binding force area 122 and support substrate 110.
Wherein, the binding force of the first binding force area 121 and support substrate 110 refers to the photosensitive of the first binding force area 121
The adhesion strength of material and support substrate 110.Second binding force area 122 refers to that second is combined with the binding force of support substrate 110
The adhesion strength of the photosensitive material and support substrate 110 in power area 122.
The material of photosensitive material layer 120 can be positive photosensitive material or negativity photosensitive material.
Preferably, when the material of photosensitive material layer 120 be positive photosensitive material when, after overexposure, exposure area with
Adhesion strength between support substrate 110 is significantly less than the adhesion strength between non-exposed areas and support substrate 110.Thus, exposure
Region forms the first binding force area 121, and non-exposed areas forms the second binding force area 122.
Preferably, when the material of photosensitive material layer 120 is negativity photosensitive material, after overexposure, non-exposed areas
Adhesion strength between support substrate 110 is significantly less than the adhesion strength between exposure area and support substrate 110.Thus, exposure
Non-exposed areas later forms the first binding force area 121, and exposure area forms the second binding force area 122.
Preferably, the material of photosensitive material layer 120 be positive photosensitive material, positive photosensitive material be selected from silane coupling agent,
At least one of silazane, polymethyl methacrylate and poly butylene succinate.The positive photosensitive material of these types
Chemical constitution and property can change after photosensitive, and to controllable adhesion strength, and material is photosensitive that front and back to all have high fever steady
It is qualitative.
Preferably, the material of photosensitive material layer 120 be negativity photosensitive material, negativity photosensitive material be selected from silane coupling agent,
At least one of poly(4-hydroxystyrene) and polyvinyl cinnamate.The negativity photosensitive material of these types is in photosensitive thenization
Learning structure and property can change, and to controllable adhesion strength, and material is photosensitive front and back all has thermal stability.
Preferably, it is in the step of photosensitive material layer 120 after forming exposure in support substrate 110：
Please also refer to Fig. 2, the precursor solution 123 of photosensitive material is coated in support substrate 110, to photosensitive material
Precursor solution 123 is exposed, the photosensitive material layer 120 after then being exposed after solidification.
This method can avoid to can not directly patterned flexible substrates be exposed, but by photosensitive material
Layer 120 is exposed to realize the regulation and control of adhesion strength, to realize the patterning of support substrate 110.In addition, in this step, by
In to the leading exposure-processed of material, reaction is more complete, and the degree of cross linking of exposure and non-exposed areas can draw to obtain bigger, cure it
The adhesion strength difference bigger provided afterwards promotes process rate to make stripping more easily and completely.
By taking the positivity silane coupling agent of following chemical structural formulas as an example：
Wherein, R ' is photosensitive group, and R1 is that either ethyl R2 is that either ethyl R3 is methyl or ethyl to methyl to methyl.
Above-mentioned silane coupling agent has high thermal stability, is resistant to 450 DEG C or more high temperature and invariance.Wherein, conditions of exposure
For：Energy>500mJ/cm2, exposure wavelength 365nm；Condition of cure is：Temperature>300 DEG C, time>30min.
After being grafted photosensitive group, exposure region and the non-exposed area adherency with support substrate 110 respectively after overexposure
Power differs greatly, and exposure region is much smaller than the adhesion strength of non-exposed area and support substrate 110 with the adhesion strength of support substrate 110.
Therefore, it is easy to remove exposure region from support substrate 110, to realize the patterning of photosensitive material layer 120.
Preferably, it is in the step of photosensitive material layer 120 after forming exposure in support substrate 110：
It is coated with the precursor solution 123 of photosensitive material in support substrate 110, photosensitive material layer 120 is obtained after solidification,
Photosensitive material layer 120 is exposed later, the photosensitive material layer 120 after being exposed, as shown in Figure 2.
This method can be convenient for Optimizing Technical, carry by accurately controlling exposure energy come accuracy controlling adhesion strength
Rise yield.In this step, the performance after precursor solution 123 cures is more stable and uniform, passes through adjusting later and exposes energy
Power, the degree of cross linking can control more accurate, to be easier crawl technological parameter, promote process rate.
By taking above-mentioned positivity silane coupling agent as an example, formed in support substrate 110 using above-mentioned steps photosensitive after exposure
Material layer 120.Wherein, conditions of exposure is：Energy>500mJ/cm2, exposure wavelength 365nm；Condition of cure is：Temperature>450℃、
Time>30min.
After being grafted photosensitive group, exposure region and the non-exposed area adherency with support substrate 110 respectively after overexposure
Power differs greatly, and exposure region is much smaller than the adhesion strength of non-exposed area and support substrate 110 with the adhesion strength of support substrate 110.
Therefore, it is easy to remove exposure region from support substrate 110, to realize the patterning of photosensitive material layer 120.
Wherein, when being exposed to the precursor solution of photosensitive material 123 or to the photosensitive material layer 120 after solidification,
The mask plate that arbitrary graphic pattern may be used is exposed, to obtain the first binding force area and the second binding force area of arbitrary graphic pattern.
Preferably, the thickness of photosensitive material layer 120 is 100nm~10 μm.When the thickness of photosensitive material layer 120 is 100nm
At~10 μm, the difference of the binding force in the binding force in the first binding force area and the second binding force area is larger, easily removes；After meanwhile
Screen body (example is easily peeled off after continuous device processing procedure：Laser lift-off or mechanical stripping).
Flexible substrates 130 are formed on S30, photosensitive material layer 120 after exposure, by the sense in the first binding force area 121
Luminescent material is removed with flexible substrates, obtains patterned photosensitive material layer 120 and patterned flexible base layer 130, with
To substrat structure 100.
The precursor solution that coating on photosensitive material layer 120 after exposure is used to form flexible substrates may be used, it is preceding
It drives liquid solution solidification and forms flexible substrates 130 later, as shown in Figure 3.
Preferably, the material of patterned flexible substrates 130 is polyimides, polyethylene terephthalate, poly- naphthalene two
Formic acid glycol ester or polyether sulfone.The flexible substrates of these materials have bendable folding endurance and high temperature resistant, can be very good to apply
On flexible display device.
The method that mechanical stripping may be used removes the photosensitive material in the first binding force area 121 with flexible substrates, obtains
To patterned photosensitive material layer 120 and patterned flexible base layer 130, as shown in Figure 4 and Figure 5.With traditional laser
Stripping is compared, and the cost of mechanical stripping is relatively low, and technique is easier to realize.
In the substrat structure 100 of present embodiment, after overexposure, the second binding force area 122 is hexagonal shown in fig. 5
Shape region, the first binding force area 121 are other regions in addition to hexagonal region.Thus by the sense in the first binding force area 121
After luminescent material is removed with flexible substrates from support substrate 110, patterned photosensitive material layer 120 and patterned flexibility
The pattern of basal layer 130 is hexagon.
Certainly, patterned photosensitive material layer 120 and the pattern of patterned flexible base layer 130 are not limited to this,
Also can be other arbitrary shapes.Also can be other irregular shapes for example, can be the rectangle or circle of rule.In addition, also
It can be arranged as required to several patterns arranged independently of each other.
In addition, when the patterned photosensitive material layer 120 that be overlapped in quadrate support substrate 110 with it is patterned soft
After property basal layer 130, larger quadrate support substrate 110 can also be cut according to demand, such as shown in Fig. 5
It is round.Directly cut support substrate 110 at this time, due at cut edge far from patterned flexible base layer 130, because
This, can be avoided that patterned flexible base layer 130 is caused to tear.
In the production method of above-mentioned substrat structure, the first binding force area and second of arbitrary graphic pattern can be obtained by exposure
Binding force area, since the binding force in the first binding force area and support substrate is smaller, to be easy the sense in the first binding force area
Luminescent material is removed with flexible substrates from support substrate, to obtain the photosensitive material layer and flexible substrates of corresponding pattern, from
And realize the pattern diversification of substrat structure.Meanwhile the production method of above-mentioned substrat structure is simply easily realized, production work is suitable for
Skill needs.
It is patterned using the technique of exposure in the production method of the substrat structure of the present invention, with traditional patterning side
Method is compared, and exposure technology can accurately control size and the position of pattered region, the pattern arbitrarily wanted.
In addition, the area for obtaining flexible substrates using exposure technology can reduce stress in thin film than original reduction.
Reducing stress in thin film has following benefit：Substrate warp amount reduces, and eliminates the offset of subsequent patterning processing procedure contraposition；Follow-up process into
When row film stack, annealing, film layer tearing risk can be reduced；Device bending resistance improves after stripping.
Fig. 4 and Fig. 5 are referred to, the substrat structure 100 of an embodiment includes support substrate 110, patterned photosensitive material
The bed of material 120 and patterned flexible substrates 130.
Wherein, support substrate 110 is preferably rigid substrates, such as substrate of glass.
Wherein, patterned photosensitive material layer 120 is arranged in support substrate 110.
Wherein, patterned flexible substrates 130 are arranged on patterned photosensitive material layer 120.
Wherein, projection of the patterned flexible substrates 130 in support substrate 110 and patterned photosensitive material layer 120
Projection in support substrate 110 overlaps.
Preferably, the material of photosensitive material layer 120 be positive photosensitive material, positive photosensitive material be selected from silane coupling agent,
At least one of silazane, polymethyl methacrylate and poly butylene succinate.The positive photosensitive material of these types
Chemical constitution and property can change after photosensitive, and to controllable adhesion strength, and material is photosensitive that front and back to all have high fever steady
It is qualitative.
Preferably, the material of photosensitive material layer 120 be negativity photosensitive material, negativity photosensitive material be selected from silane coupling agent,
At least one of poly(4-hydroxystyrene) and polyvinyl cinnamate.The negativity photosensitive material of these types is in photosensitive thenization
Learning structure and property can change, and to controllable adhesion strength, and material is photosensitive front and back all has thermal stability.
Preferably, the thickness of photosensitive material layer 120 is 100nm~10 μm.When the thickness of photosensitive material layer 120 is 100nm
At~10 μm, the difference of the binding force in the binding force in the first binding force area and the second binding force area is larger, easily removes；After meanwhile
Screen body (example is easily peeled off after continuous device processing procedure：Laser lift-off or mechanical stripping).
Preferably, the material of patterned flexible substrates is polyimides, polyethylene terephthalate, poly- naphthalenedicarboxylic acid
Glycol ester or polyether sulfone.
Above-mentioned substrat structure is obtained using above-mentioned production method, can obtain the first binding force of arbitrary graphic pattern by exposure
Area and the second binding force area, since the binding force in the first binding force area and support substrate is smaller, to be easy the first binding force
Photosensitive material in area is removed with flexible substrates from support substrate, to obtain the photosensitive material layer and flexibility of corresponding pattern
Substrate, to realize the pattern diversification of substrat structure.Meanwhile the production method of above-mentioned substrat structure is simply easily realized, can be fitted
Production technology is answered to need.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of production method of substrat structure, which is characterized in that include the following steps：
Support substrate is provided；
The photosensitive material layer after exposure is formed in the support substrate, the photosensitive material layer after the exposure has first to combine
Power area and the second binding force area, wherein first binding force area and the binding force of the support substrate are less than second knot
The binding force in resultant force area and the support substrate；
And flexible substrates are formed on the photosensitive material layer after the exposure, by the photosensitive material in first binding force area
It is removed with flexible substrates, patterned photosensitive material layer and patterned flexible base layer is obtained, to obtain substrat structure.
2. the production method of substrat structure according to claim 1, which is characterized in that formed and exposed in the support substrate
The step of photosensitive material layer after light is：
It is coated with the precursor solution of photosensitive material in the support substrate, the precursor solution of the photosensitive material is exposed
Light, the photosensitive material layer after then being exposed after solidification.
3. the production method of substrat structure according to claim 1, which is characterized in that formed and exposed in the support substrate
The step of photosensitive material layer after light is：
It is coated with the precursor solution of photosensitive material in the support substrate, photosensitive material layer is obtained after solidification, later to institute
It states photosensitive material layer to be exposed, the photosensitive material layer after being exposed.
4. the production method of substrat structure according to claim 1, which is characterized in that the material of the photosensitive material layer is
Positive photosensitive material, exposure area form first binding force area, and non-exposed areas forms second binding force area.
5. the production method of substrat structure according to claim 1, which is characterized in that the material of the photosensitive material layer is
Negativity photosensitive material, non-exposed areas form first binding force area, and exposure area forms second binding force area.
6. a kind of substrat structure, which is characterized in that including：
Support substrate；
Patterned photosensitive material layer is arranged in the support substrate；
And patterned flexible substrates, it is arranged on the patterned photosensitive material layer；
Wherein, projection of the patterned flexible substrates in the support substrate exists with the patterned photosensitive material layer
Projection in the support substrate overlaps.
7. substrat structure according to claim 6, which is characterized in that the material of the photosensitive material layer is Positive photosensitive material
Material, the positive photosensitive material is in silane coupling agent, silazane, polymethyl methacrylate and poly butylene succinate
At least one.
8. substrat structure according to claim 6, which is characterized in that the material of the photosensitive material layer is negative photosensitive material
Material, the negativity photosensitive material in silane coupling agent, poly(4-hydroxystyrene) and polyvinyl cinnamate at least one
Kind.
9. substrat structure according to claim 6, which is characterized in that the thickness of the photosensitive material layer is the μ of 100nm~10
m。
10. substrat structure according to claim 6, which is characterized in that the material of the patterned flexible substrates is poly-
Acid imide, polyethylene terephthalate, polyethylene naphthalate or polyether sulfone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810054092.XA CN108336093B (en) | 2018-01-19 | 2018-01-19 | Substrate structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810054092.XA CN108336093B (en) | 2018-01-19 | 2018-01-19 | Substrate structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108336093A true CN108336093A (en) | 2018-07-27 |
| CN108336093B CN108336093B (en) | 2021-01-22 |
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| CN110518145A (en) * | 2019-08-28 | 2019-11-29 | 云谷（固安）科技有限公司 | Thin-film packing structure and preparation method thereof, display panel |
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| CN102176435A (en) * | 2010-12-27 | 2011-09-07 | 友达光电股份有限公司 | Flexible substrate structure and manufacturing method thereof |
| CN105489784A (en) * | 2015-12-09 | 2016-04-13 | 苏州大学 | Fabrication method for flexible conductive electrode, electrode fabricated with method and application of electrode |
| CN106935593A (en) * | 2015-12-31 | 2017-07-07 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and preparation method thereof |
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| CN102176435A (en) * | 2010-12-27 | 2011-09-07 | 友达光电股份有限公司 | Flexible substrate structure and manufacturing method thereof |
| CN105489784A (en) * | 2015-12-09 | 2016-04-13 | 苏州大学 | Fabrication method for flexible conductive electrode, electrode fabricated with method and application of electrode |
| CN106935593A (en) * | 2015-12-31 | 2017-07-07 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110518145A (en) * | 2019-08-28 | 2019-11-29 | 云谷（固安）科技有限公司 | Thin-film packing structure and preparation method thereof, display panel |
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