CN108318547B - Single cantilever type gas sensor with curled structure and sensor array - Google Patents
Single cantilever type gas sensor with curled structure and sensor array Download PDFInfo
- Publication number
- CN108318547B CN108318547B CN201810447480.4A CN201810447480A CN108318547B CN 108318547 B CN108318547 B CN 108318547B CN 201810447480 A CN201810447480 A CN 201810447480A CN 108318547 B CN108318547 B CN 108318547B
- Authority
- CN
- China
- Prior art keywords
- cantilever
- base
- curled
- gas sensor
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 6
- 230000035515 penetration Effects 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000012466 permeate Substances 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000006872 improvement Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model discloses a single cantilever type gas sensor with a curled structure, which comprises a silicon substrate, a supporting film, a heating resistor, an isolating film and a detection electrode, wherein the silicon substrate, the supporting film, the heating resistor, the isolating film and the detection electrode are sequentially stacked, the supporting film is used for providing an integral supporting function, the heating resistor is used for providing the temperature required by the work, the isolating film is used for electrically isolating the heating resistor and the detection electrode, and the detection electrode is used for detecting the resistance change; the sensor has a base structure and a cantilever structure, the end of the cantilever structure is curled, and a gas sensitive material is arranged on the cantilever structure. The utility model also provides a sensor array consisting of a single cantilever type gas sensor with a coiled structure. The sensor has the advantages of low power consumption, small size, high integration level, simple production process, easy positioning and effective improvement of production efficiency.
Description
Technical Field
The utility model belongs to the technical field of micro-electro-mechanical systems and gas detection, and particularly relates to a single cantilever type gas sensor with a curled structure and a sensor array.
Background
The gas sensor based on the micro-electro-mechanical system (MEMS) technology gradually shows huge application potential due to the characteristics of small size, low power consumption, high sensitivity, quick response and the like, and is expected to replace the gas sensor based on the traditional technology and be widely applied to the fields of the Internet of things, mobile terminals, artificial intelligence and the like. Among MEMS gas sensors, sensors using Metal Oxide Semiconductor (MOS) materials have a wide detection range, and thus have a wider market space in future large-scale applications.
In the current MEMS MOS gas sensor, mainly based on the study of a suspended film type micro heater, the sensor with the structure has lower power consumption, generally can be as low as 20 milliwatts, and an utility model patent with a patent number 201520759054.6 provides a resistive gas sensor with a four-layer structure of four supporting suspended beams, which has a silicon substrate frame, a heating film layer, a heating electrode layer and a sensitive film layer sequentially arranged from bottom to top, wherein the heating film layer comprises a heating film region, and the heating film region is connected with the silicon substrate frame through four suspended beams. Another patent, for example, CN201520759055.0, provides a resistive gas sensor with a four-layer structure of two support suspension beams, which also includes a silicon substrate frame, a heating film layer, a heating electrode layer, and a sensitive film layer sequentially disposed from bottom to top, where the heating film layer includes a heating film region, and the heating film region is connected to the silicon substrate frame by two suspension beams. Although the power consumption of the multi-cantilever type gas sensor is low, the multi-cantilever type gas sensor cannot meet the requirements along with the high-speed development of mobile terminals and application of the internet of things. Meanwhile, when the multi-cantilever type gas sensor is prepared, the problems of complex process, difficult positioning and low efficiency exist.
Disclosure of Invention
The technical problems to be solved by the utility model are as follows: how to further reduce the power consumption of the cantilever type gas sensor.
The utility model adopts the following technical scheme to solve the technical problems:
a single cantilever gas sensor with curled structure has a base structure and a cantilever structure, which includes the following parts laminated in turn from bottom to top
A silicon substrate;
the support film is a silicon nitride film and comprises a first base, a first cantilever which is warped upwards is arranged on one side of the first base, and a first curled portion is arranged at the end part of the first cantilever far away from the first base;
the heating resistor comprises a second base part, one side of the second base part is provided with a second cantilever which is warped upwards, and the end part of the second cantilever far away from the second base part is provided with a second curling part; a first window is formed in one side of the second base part, opposite to the second cantilever, and a second window extending to a second curled part along the length direction of the second cantilever is formed in the second cantilever and is communicated with the first window; the second base is provided with first leads at the positions of the two sides of the second window respectively;
the isolation film is a silicon nitride film and comprises a third base part, one side of the third base part is provided with a third cantilever which is warped upwards, and the end part of the third cantilever far away from the third base part is provided with a third curled part; a transmission hole is formed in the third base part at a position corresponding to the first lead, and the first lead passes through the corresponding transmission hole and is exposed outside; the thickness of the isolating film is larger than that of the heating resistor;
the detection electrode comprises a fourth base part, one side of the fourth base part is provided with a fourth cantilever which is warped upwards, and the end part of the fourth cantilever far away from the fourth base part is provided with a fourth curled part; a third window is arranged on one side, away from the fourth cantilever, of the fourth base part, a fourth window which extends to a fourth curled part along the length direction of the fourth cantilever and divides the fourth curled part is arranged on the fourth cantilever, and the fourth window is communicated with the third window and divides the detection electrode into two parts; the fourth base part does not cover the transmission hole, and the positions of the fourth base part, which are positioned at the two sides of the third window, are provided with second leads;
the silicon substrate, the first base, the second base, the third base and the fourth base are correspondingly arranged to form the matrix structure; the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are correspondingly arranged, and the fourth curled portion, the third curled portion, the second curled portion and the first curled portion are sequentially arranged from inside to outside to form the cantilever structure;
the first curled portion is wrapped with a gas sensitive material, and the gas sensitive material is in contact with the fourth cantilever.
Preferably, in the single cantilever type gas sensor with a curled structure, horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are rectangular.
Preferably, in the single cantilever type gas sensor with a coiled structure according to the present utility model, horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are all isosceles trapezoids, and widths of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are gradually increased along a direction away from the substrate structure.
Preferably, in the single cantilever type gas sensor with a curled structure according to the present utility model, the support membrane is provided with a first hole, and the first hole extends from one end of the first cantilever near the first base to the first curled portion.
Preferably, in the single cantilever type gas sensor with a curled structure, the isolating membrane is provided with a second hole, and the second hole extends from one end of the third cantilever close to the third base to the third curled portion.
Preferably, in the single cantilever type gas sensor with a curled structure of the present utility model, the isolating membrane is provided with a second hole, and the second hole extends from one end of the third cantilever near the third base to the third curled portion, and is disposed corresponding to the first hole.
Preferably, the single cantilever type gas sensor with the curled structure according to the present utility model has the fourth base portion located at a side of the permeation hole away from the third cantilever, and the fourth cantilever is located between the two permeation holes.
Preferably, the single cantilever type gas sensor with the curled structure according to the present utility model has the fourth base portion located at a side of the penetration hole close to the third cantilever.
Preferably, the thickness of the support film, the heating resistor, the isolating film and the detecting electrode of the single cantilever type gas sensor with the curled structure is
The utility model also provides a sensor array which is composed of a plurality of the warped single cantilever type gas sensors.
The utility model has the technical advantages that:
according to the technical scheme, a single cantilever beam structure is adopted, an effective area is arranged at the end part of a cantilever beam, and the power consumption of the sensor is reduced to 1 milliwatt by reducing the area of the effective area and the number of the cantilever beams; the curled structure of the gas sensor can load more sensitive materials than a planar structure with the same area, which is beneficial to providing the sensitivity and stability of the sensor; the size is smaller, the integration level is higher, and the integration level is improved by an order of magnitude compared with the existing multi-cantilever structure;
the preparation method of the gas sensor provided by the utility model has the advantages of simple process, easiness in positioning, effective improvement of production efficiency and easiness in preparing the gas-sensitive material with the composite structure of the gas material.
Drawings
FIG. 1 is a schematic view of a single cantilever type gas sensor with a curled structure according to an embodiment of the present utility model;
FIG. 2 is an exploded view of FIG. 1;
FIG. 3 is an enlarged schematic view of FIG. 2 at A;
FIG. 4 is an enlarged schematic view of FIG. 2B;
FIG. 5 is an exploded view of a single cantilever type gas sensor with a coiled structure according to a second embodiment of the present utility model;
fig. 6 is a schematic structural diagram of a sensor array according to a third embodiment of the present utility model.
Detailed Description
In order to facilitate the understanding of the technical scheme of the present utility model by those skilled in the art, the technical scheme of the present utility model will be further described with reference to the accompanying drawings.
Example 1
Referring to fig. 1 to 4, the present embodiment provides a warped single cantilever type gas sensor comprising a silicon substrate 1, a support film 2, a heating resistor 3, a separation film 4, a detection electrode 5, and a gas sensitive material 6.
The sensor has a base structure and a cantilever structure, wherein the base structure is rectangular in general, and the cantilever structure is arranged in the middle of one long side of the base structure, so that the horizontal projection of the sensor is T-shaped. The concrete structure is as follows:
the upper end face and the lower end face of the silicon substrate 1 are rectangular;
the support film 2 is used for supporting the whole cantilever structure, and is a silicon nitride layer. Including a first base 21, a first cantilever 22 and a first curl 23. The first base 21 is rectangular, the first cantilever 22 is connected with the middle part of one long side of the first base 21, and the first cantilever 22 is warped upwards; the first curl 23 is provided at an end of the first cantilever 22 remote from the first base 21.
The heating resistor 3 is made of a metallic material, typically platinum, which is used to provide the required operating temperature for the sensor operation. The heating resistor 3 comprises a second base 31, a second cantilever 32 and a second curled portion 33, wherein the second base 31 is rectangular, the second cantilever 32 is positioned in the middle of one long side of the second base 31, and the second cantilever 32 is curled upwards; the second curled portion 33 is located at an end of the second cantilever 32 remote from the second base 31; a first window 34 is formed on one side of the second base 31 opposite to the second cantilever 32, a second window 35 extending to the second curled portion 33 along the length direction of the second cantilever 32 is formed on the second cantilever 32, and the second window 35 is communicated with the first window 34; the second base portion 31 is provided with first leads (not shown) at positions on both sides of the second window 35, respectively.
The isolation film 4 is a silicon nitride film, and is provided for electrically isolating the heating resistor 3 and the detection electrode 5. The isolation diaphragm 4 includes a third base 41, a third cantilever 42, and a third curled portion 43, the third cantilever 41 being provided in the middle of one long side of the third base 41, and the third cantilever 42 being curled upward; a through hole 44 is formed in the third base 41 at a position corresponding to the first lead, and the first lead passes through the corresponding through hole 44 and is exposed; the third curled portion 43 is provided at an end of the third cantilever 42 remote from the third base portion 41; the thickness of the isolating film 4 is greater than the thickness of the heating resistor 3.
The detection electrode 5 is typically a noble metal electrode, such as platinum or gold. The detection electrode 5 includes a fourth base portion 51, a fourth cantilever 52, and a fourth curled portion 53, the fourth cantilever 52 being provided in the middle of one long side of the fourth base portion 51, and the fourth cantilever 52 being curled upward; the fourth curl 53 is disposed at an end of the fourth cantilever 52 remote from the fourth base; a third window 54 is arranged on one side of the fourth base 51 opposite to the fourth cantilever 52, a fourth window 55 which extends to the fourth curled portion 53 along the length direction of the fourth cantilever 52 and divides the fourth curled portion 53 is arranged on the fourth cantilever 52, the fourth window 55 is communicated with the third window 54, and the detection electrode 5 is divided into two parts; the fourth base 41 does not cover the through hole 44, and is provided with second leads (not shown) at positions on both sides of the third window 54.
The silicon substrate 1, the first base 21, the second base 31, the third base 41 and the fourth base 51 are correspondingly arranged to form the matrix structure; the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are correspondingly arranged, the third curled portion 43 wraps the fourth curled portion 53, the second curled portion 33 wraps the third curled portion 43, and the first curled portion 23 includes the second curled portion 33 to form the cantilever structure.
The gas sensitive material 6 is composed of a metal oxide semiconductor material at the nano-scale, such as tin dioxide, zinc oxide or other oxides, etc. The gas sensitive material 6 is wrapped outside the first curled portion 23 and contacts with the fourth cantilever 52, so as to realize electrical connection between the gas sensitive material 6 and the detection electrode 5. When the gas sensitive material 6 adsorbs specific gas molecules, the resistance of the gas sensitive material changes, so that the purpose of detecting gas is achieved.
The core of the gas sensor is a cantilever structure with a curled structure, and the effective area for adding the gas sensitive material is only at the end of the cantilever structure away from the base mechanism. On one hand, the heat loss caused by heat convection and heat radiation is reduced by reducing the area of the effective area, and on the other hand, the cantilever beam structure is thin and long and warps upwards, so that the contact with the silicon substrate 1 is avoided, the heat loss in the heat conduction process can be greatly reduced, and the sensor has extremely low power consumption; on the other hand, the gas-sensitive material 6 is wrapped outside the first curled portion 23, so that the contact area with the gas to be detected is large, and the response speed is faster.
In the present embodiment, the base structure is rectangular, and the cantilever structure is disposed at the middle of the long side of the rectangular base structure, but this is not strictly defined, and in the actual production process, the specific shape of the base structure and the disposition position of the cantilever structure are set as required.
In this embodiment, the horizontal projections of the first 22, second 32, third 42, and fourth 52 cantilevers are rectangular.
The sensor may further comprise a first hole 24 and a second hole 45, the first hole 23 being provided on the first cantilever 22 and extending from an end of the first cantilever 22 near the first base 21 to the first curl 23. The second hole 45 is provided on the third cantilever 42 and extends from an end of the third cantilever 42 near the second base 41 to the third curled portion 43. The sensor may be provided with only the first hole 24 or only the second hole 45; both may be provided at the same time, and the first hole 24 and the second hole 45 may be positioned at the same time. The heat loss during heat conduction is further reduced by providing elongated first holes 23 and/or second holes 44.
More specifically, the fourth base portion 51 is located on a side of the penetration hole 44 facing away from the third cantilever 42, and the fourth cantilever 52 is located between the two penetration holes 44. Alternatively, the fourth base 51 is located on the side of the penetration hole 44 near the third cantilever 42.
In addition, the thicknesses of the support film 2, the heating resistor 3, the isolating film 4 and the detection electrode 5 are all
The first window 34 may be a symmetrical structure in this embodiment, and the heating resistor 3 is formed into a symmetrical structure by providing the first window 34 and the second window 35; the third window 54 has a symmetrical structure, and the detection electrode 5 is divided into two symmetrical parts by the third window 54 and the fourth window 55. In actual production, the first window 34 and the third window 54 may be asymmetric, if necessary, and the heating resistor 3 and the detection electrode 5 may be asymmetric.
The sensor of this embodiment is prepared by the following method:
(1) Selecting a silicon substrate and a sacrificial layer: if a common single-polished or double-polished silicon wafer is used as a substrate, a layer with the thickness ofAs a sacrificial layer; if SOI silicon wafer is used as substrate, the top silicon layer is used as sacrificial layer, and the thickness of the sacrificial layer is2um；
(2) Growing a silicon nitride layer on the sacrificial layer by adopting a low-pressure chemical vapor deposition method to serve as a supporting film 2;
(3) Manufacturing a heating resistor 3: manufacturing a platinum resistor heating resistance wire by adopting a glass process;
(4) Manufacturing a separation film 4: preparing a silicon nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then etching the isolation film by utilizing reactive ion etching or ion beam etching to form a penetration hole 44 to expose the heating resistor 3;
(5) Manufacturing a detection electrode 5: preparing a gold or platinum electrode by adopting a stripping process;
(6) Release film: the method comprises the steps of firstly, thoroughly etching and exposing a supporting film by utilizing reactive ion etching or ion beam etching to expose a silicon substrate to form a film release window, then, etching a sacrificial layer by utilizing a wet etching process, and after release, upwards warping a cantilever structure due to the tensile stress of a silicon nitride layer, wherein a curled structure is formed at the free end of the cantilever structure;
(7) Loading of the gas sensitive material 6: and (3) dipping tin dioxide colloid at the end part of the cantilever structure, sintering at 600 ℃ for 2 hours to finish loading of the gas sensitive material 6, thus obtaining the single cantilever type gas sensor with the coiled structure, and then obtaining the single cantilever type gas sensor at the corresponding positions of the first lead and the second lead.
It should be noted that, when the silicon substrate in this embodiment selects a single-polished silicon wafer or a double-polished silicon wafer, the crystal orientation of the silicon substrate is not strictly required; the thickness of the support film 2, the heating resistor 3, the isolating film 4 and the detection electrode 5 is as requiredAt the position ofIs adjusted within the range of (2).
Example two
As shown in fig. 5, the difference between the present embodiment and the first embodiment is that the horizontal projections of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are all isosceles trapezoids, and the widths of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 gradually increase along the direction away from the substrate structure. By widening the connection width of the cantilever structure and the matrix structure, the mechanical strength of the whole sensor is improved while the low power consumption characteristic of the single cantilever structure is maintained.
The method of manufacturing the sensor of this example is also merely a difference in manufacturing parameters compared to the first example.
Example III
In the smell recognition application, a plurality of sensors are often required to be integrated together to work, and the single cantilever type sensor with the curled structure described in the first embodiment and the second embodiment is very easy to integrate a plurality of sensors to form a sensor array due to the unique structure. As shown in fig. 6, the present embodiment provides a sensor array, which is tiled by the single cantilever sensor having the curled structure, where the cantilever structures of the respective sensors are all located on the same side of the base structure. Of course, the cantilever structures of the sensors may be distributed on two sides of the base structure or in other arrangements, as desired.
The preparation method of the sensor array in this embodiment is equivalent to the preparation method of the sensor in the first embodiment, and only needs to set etching conditions in the step (6), so that a plurality of substrate structures are sequentially connected after the film is released, and each substrate structure is provided with a sensor array with a warped cantilever structure; and then tin dioxide gas-sensitive materials with the same or different formulas are respectively dipped at the end part of each cantilever structure according to the requirement, so as to form a single cantilever gas sensor array with a curled structure.
The technical scheme of the utility model is described above by way of example with reference to the accompanying drawings, and it is apparent that the specific implementation of the utility model is not limited by the above manner, and it is within the scope of the utility model if various insubstantial improvements of the method concept and technical scheme of the utility model are adopted or the inventive concept and technical scheme are directly applied to other occasions without improvement.
Claims (10)
1. The utility model provides a single cantilever beam formula gas sensor with coil structure, its characterized in that, single cantilever beam formula gas sensor's horizontal projection is T type, has base structure and cantilever beam structure, and it includes the following part of range upon range of setting in proper order from bottom to top:
a silicon substrate;
the support film is a silicon nitride film and comprises a first base, a first cantilever which is warped upwards is arranged on one side of the first base, and a first curled portion is arranged at the end part of the first cantilever far away from the first base;
the heating resistor comprises a second base part, one side of the second base part is provided with a second cantilever which is warped upwards, and the end part of the second cantilever far away from the second base part is provided with a second curling part; a first window is formed in one side of the second base part, opposite to the second cantilever, and a second window extending to a second curled part along the length direction of the second cantilever is formed in the second cantilever and is communicated with the first window; the second base is provided with first leads at the positions of the two sides of the second window respectively;
the isolation film is a silicon nitride film and comprises a third base part, one side of the third base part is provided with a third cantilever which is warped upwards, and the end part of the third cantilever far away from the third base part is provided with a third curled part; a transmission hole is formed in the third base part at a position corresponding to the first lead, and the first lead passes through the corresponding transmission hole and is exposed outside; the thickness of the isolating film is larger than that of the heating resistor;
the detection electrode comprises a fourth base part, one side of the fourth base part is provided with a fourth cantilever which is warped upwards, and the end part of the fourth cantilever far away from the fourth base part is provided with a fourth curled part; a third window is arranged on one side, away from the fourth cantilever, of the fourth base part, a fourth window which extends to a fourth curled part along the length direction of the fourth cantilever and divides the fourth curled part is arranged on the fourth cantilever, and the fourth window is communicated with the third window and divides the detection electrode into two parts; the fourth base part does not cover the transmission hole, and the positions of the fourth base part, which are positioned at the two sides of the third window, are provided with second leads;
the silicon substrate, the first base, the second base, the third base and the fourth base are correspondingly arranged to form the matrix structure; the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are correspondingly arranged, and the fourth curled portion, the third curled portion, the second curled portion and the first curled portion are sequentially arranged from inside to outside to form the cantilever structure;
the cantilever beam structure is slender, the first curled portion is wrapped with a gas-sensitive material, and the gas-sensitive material is in contact with the fourth cantilever.
2. The single cantilever gas sensor with a coiled configuration of claim 1, wherein the first cantilever, the second cantilever, the third cantilever, and the fourth cantilever are each rectangular in horizontal projection.
3. The single cantilever gas sensor with a coiled structure according to claim 1, wherein the horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are all isosceles trapezoids, and the widths of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever gradually increase along the direction away from the base structure.
4. A single cantilever beam gas sensor according to any one of claims 1 to 3, wherein the support membrane is provided with a first aperture extending from an end of the first cantilever arm adjacent the first base to the first curl.
5. A single cantilever beam gas sensor according to any one of claims 1-3, wherein the spacer film is provided with a second aperture extending from an end of the third cantilever arm adjacent the third base portion to the third curl.
6. The single cantilever type gas sensor with a curled structure according to claim 4, wherein the isolating membrane is provided with a second hole, and the second hole extends from one end of the third cantilever near the third base to the third curled portion, and is disposed corresponding to the first hole.
7. A single cantilever gas sensor with a coiled structure according to claim 1, wherein the fourth base is located on the side of the permeate aperture facing away from the third cantilever and the fourth cantilever is located between the two permeate apertures.
8. A single cantilever gas sensor with a coiled structure according to claim 1, wherein the fourth base is located on the side of the penetration hole adjacent to the third cantilever.
9. The single cantilever type gas sensor with a curled structure according to claim 1, wherein the thicknesses of the supporting film, the heating resistor, the isolating film and the detecting electrode are all
10. A sensor array comprising a plurality of single cantilever-type gas sensors having a curled structure according to any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810447480.4A CN108318547B (en) | 2018-05-11 | 2018-05-11 | Single cantilever type gas sensor with curled structure and sensor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810447480.4A CN108318547B (en) | 2018-05-11 | 2018-05-11 | Single cantilever type gas sensor with curled structure and sensor array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108318547A CN108318547A (en) | 2018-07-24 |
| CN108318547B true CN108318547B (en) | 2024-01-23 |
Family
ID=62895774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810447480.4A Active CN108318547B (en) | 2018-05-11 | 2018-05-11 | Single cantilever type gas sensor with curled structure and sensor array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108318547B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5012671A (en) * | 1988-11-15 | 1991-05-07 | Ricoh Company, Ltd. | Gas detecting device |
| JPH0688799A (en) * | 1991-09-13 | 1994-03-29 | Ricoh Co Ltd | Gas sensor |
| KR20030013129A (en) * | 2001-08-07 | 2003-02-14 | 한국과학기술연구원 | High sensitive cantilever sensor and method for fabrication thereof |
| CN102359980A (en) * | 2011-07-08 | 2012-02-22 | 中国科学院上海微系统与信息技术研究所 | Resistance-type gas sensor with two support suspension beams and four-layer structure and method |
| CN205449859U (en) * | 2015-09-28 | 2016-08-10 | 合肥微纳传感技术有限公司 | Resistance -type gas sensor with two support four -layer structure of hanging oneself from a beam |
| CN208313879U (en) * | 2018-05-11 | 2019-01-01 | 合肥微纳传感技术有限公司 | A kind of single suspension beam type gas sensor and sensor array with coiled structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GR1004040B (en) * | 2001-07-31 | 2002-10-31 | Method for the fabrication of suspended porous silicon microstructures and application in gas sensors | |
| US6797631B2 (en) * | 2001-08-07 | 2004-09-28 | Korea Institute Of Science And Technology | High sensitive micro-cantilever sensor and fabricating method thereof |
| KR100513662B1 (en) * | 2003-09-08 | 2005-09-09 | 엘지전자 주식회사 | Method of manufacturing cantilever |
| US8354729B2 (en) * | 2010-12-27 | 2013-01-15 | Industrial Technology Research Institute | Gas sensor and manufacturing method thereof |
-
2018
- 2018-05-11 CN CN201810447480.4A patent/CN108318547B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5012671A (en) * | 1988-11-15 | 1991-05-07 | Ricoh Company, Ltd. | Gas detecting device |
| JPH0688799A (en) * | 1991-09-13 | 1994-03-29 | Ricoh Co Ltd | Gas sensor |
| KR20030013129A (en) * | 2001-08-07 | 2003-02-14 | 한국과학기술연구원 | High sensitive cantilever sensor and method for fabrication thereof |
| CN102359980A (en) * | 2011-07-08 | 2012-02-22 | 中国科学院上海微系统与信息技术研究所 | Resistance-type gas sensor with two support suspension beams and four-layer structure and method |
| CN205449859U (en) * | 2015-09-28 | 2016-08-10 | 合肥微纳传感技术有限公司 | Resistance -type gas sensor with two support four -layer structure of hanging oneself from a beam |
| CN208313879U (en) * | 2018-05-11 | 2019-01-01 | 合肥微纳传感技术有限公司 | A kind of single suspension beam type gas sensor and sensor array with coiled structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108318547A (en) | 2018-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108318548B (en) | Single-cantilever beam gas sensor, sensor array and preparation method of sensor | |
| CN108519408B (en) | Gas sensor, preparation method of sensor and sensor array | |
| KR100812996B1 (en) | Micro gas sensor and method for manufacturing the same | |
| US8047074B2 (en) | Humidity sensor and method of manufacturing the same | |
| EP1826174B1 (en) | Method for forming thin film structure having small tensile stress | |
| CN103675048B (en) | A kind of metal-oxide gas transducer based on MEMS and preparation technology | |
| CN101795505B (en) | Low-power consumption micro-heater with mesh-structured heating film and fabrication method thereof | |
| US10697920B2 (en) | Gas sensor | |
| CN107381495B (en) | MEMS micro-hotplate and manufacturing method thereof | |
| CN108519409B (en) | Warp single cantilever type gas sensor, preparation method and sensor array | |
| CN104142359B (en) | A kind of MEMS gas sensor and processing method thereof | |
| JPWO2017014033A1 (en) | Limit current type gas sensor | |
| CN108318547B (en) | Single cantilever type gas sensor with curled structure and sensor array | |
| CN214360245U (en) | Ceramic suspension beam type MEMS micro-heating plate | |
| CN208313879U (en) | A kind of single suspension beam type gas sensor and sensor array with coiled structure | |
| KR101992022B1 (en) | Semiconductor gas sensor | |
| Wang et al. | Wafer‐level fabrication of low power consumption integrated alcohol microsensor | |
| CN109748233A (en) | The marmem and preparation method of high-precision antisymmetry formula double wafer structure | |
| CN108918743B (en) | Miniature thermal conductivity detector | |
| US20220340412A1 (en) | Thin film getter structure having miniature heater and manufacturing method thereof | |
| CN117303304A (en) | Acceleration sensor chip with DLC (diamond like carbon) optimized structure and preparation method thereof | |
| CN118565701A (en) | MEMS composite vacuum gauge based on carbon nano tube and implementation method thereof | |
| Zhu et al. | Design and fabrication of planar-type micro-hotplate with Si-island gas sensor | |
| JP2643409B2 (en) | Limit current type oxygen sensor | |
| CN118641596A (en) | MEMS gas sensor with low power consumption and long service life |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 230088 building D6, phase I, Zhongan chuanggu Science Park, No. 900, Wangjiang West Road, high tech Zone, Hefei, Anhui Applicant after: Micro nano perception (Hefei) Technology Co.,Ltd. Address before: Room 1608-1610, 16 / F, F3 building, phase II, innovation industrial park, 2800 innovation Avenue, high tech Zone, Hefei City, Anhui Province, 230088 Applicant before: HEFEI MICRO NANO SENSING TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |